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WO2011145930A1 - Through silicon via treatment device and method for treatment of tsvs in a chip manufacturing process - Google Patents

Through silicon via treatment device and method for treatment of tsvs in a chip manufacturing process Download PDF

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Publication number
WO2011145930A1
WO2011145930A1 PCT/NL2011/050329 NL2011050329W WO2011145930A1 WO 2011145930 A1 WO2011145930 A1 WO 2011145930A1 NL 2011050329 W NL2011050329 W NL 2011050329W WO 2011145930 A1 WO2011145930 A1 WO 2011145930A1
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WO
WIPO (PCT)
Prior art keywords
donor
tsv
laser beam
wafer
guiding
Prior art date
Application number
PCT/NL2011/050329
Other languages
French (fr)
Inventor
Gerrit Oosterhuis
Albertus Jozef Huis In 't Veld
Frederikus Johannes Maria De Vreede
Edwin Adrianus Cornelius Van Den Eijnden
Raymond Jacobus Wilhelmus Knaapen
Original Assignee
Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno
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Publication of WO2011145930A1 publication Critical patent/WO2011145930A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating

Definitions

  • the invention relates to a chip die Through Silicon Via (TSV) treatment device and method arranged for treatment of TSVs in chip dies in a chip manufacturing process.
  • TSV chip die Through Silicon Via
  • TSVs Through Silicon Vias
  • a TSV can be seen as a through hole through the thin die; this hole structure typically needs a wall liner treatment, in the remainder also referenced as cladding which may include for example, a barrier layer, isolation layer or seed layer.
  • the TSV is provided with a filling of a conductive matter such as Cu.
  • the width of a TSV is typically sub 10 micron, and a filling resolution of 2-5 micron is therefore desired. To obtain such resolution, traditionally
  • subtractive (photolithographic) techniques are applied, which involves complex steps including coating, fotoresisting, lithography, etching and rinsing which also involves substantial waste of functional matters that are not used.
  • a chip die TSV treatment device arranged for treatment of TSVs in chip dies in a chip manufacturing process, comprising: a carrier plate comprising clamping zones on a top face arranged for placement of a wafer having identified TSVs to be treated; a donor guiding system for guiding a donor matter over a TSV to be treated, the guiding system adapted to keep the donor matter distanced from the wafer top surface; an alignable laser system arranged for impinging a laser beam on a side of the donor matter opposite a side facing the wafer; the laser beam tuned in timing, energy and direction to generate donor matter directed towards the TSV; and a control system for aligning the laser beam and the donor guiding system relative to the TSV.
  • a method of treatment of TSVs in chip dies in a chip manufacturing process comprising: clamping a wafer having identified TSVs to be treated; providing a donor distanced from the wafer top surface; aligning the laser beam of the laser system and guiding the donor relative to an identified TSV on the wafer; and impinging a laser beam on a side of the donor matter opposite a side facing the wafer; the laser beam tuned in timing, energy and direction to generate donor matter directed towards a TSV to be treated.
  • this technique is found to have throughput capability that is attractive especially when the number of TSV's on a chip die is limited to less than about 100 TSV/mm2.
  • Advantages may further include reduction of process steps and process locations - in particular, obviating the necessity of a photolithographic process step - less material waste and combining manufacturing process stages of TSV cladding and filling.
  • Figure 1 shows a first embodiment of the present invention
  • Figure 2 shows a second embodiment of the present invention
  • Figure 3 shows a treatment device using a moving carrier
  • Figure 4 shows a stepping embodiment for treatment of a TSV in a repetitive treatment process
  • Figure 5 shows a donor system including a rotating disk
  • Figure 6 shows a donor system including a tape guiding system
  • Figure 7 shows experimental results of a series of molten depositions
  • Figure 8 shows a diagram indicating the droplet size vs laser power.
  • a first embodiment of a chip die TSV treatment concerns cladding the TSV wall 101 by a plasma deposition process, by impinging the laser beam 102 on the donor 130 so as to generate a plasma 140 directed into the TSV 100.
  • a silicon die 110 having vias 100 (schematically indicated with a bottom part 105, while this may or may not be the case) is cladded with a liner 106.
  • the silicon die 110 is provided with a Silicon dioxide isolator wall 101 and a barrier layer 106 of any of the group of
  • a seed layer can be provided for an electroplating process, for example, a Copper liner.
  • the deposition step can be carried out as one embodiment of a method of treatment of TSVs 100 in chip dies 150 in a chip manufacturing process.
  • the method comprises clamping a wafer 110 having identified TSVs 100 to be treated; providing a donor 130 distanced from the wafer top surface 111; aligning the laser beam 102 of the laser system 120 and guiding the donor 130 relative to an identified TSV 100 on the wafer 110; and impinging a laser beam 102 on a side 131 of the donor 130 opposite a side facing 132 the wafer 110; the laser beam 102 tuned in timing, energy and direction to generate donor matter in the form of a plasma 140 directed towards a TSV 100 to be treated.
  • a plasma 140 is generated of a donor 130 preferably chosen of a group of Tantalum (Ta), Tantalum Nitride (TaN), Titanium (Ti), Titanium Nitride (TiN).
  • the clamp 112 may be made of silicon, glass or epoxy based support.
  • the clamp 112 is a vacuum clamp, for example, of porous aluminum, where a vacuum is provided underneath the wafer 110 and transferred to the clamping zones 113 via channels 114.
  • a second embodiment of the inventive method is schematically depicted in Figure 2, advantageously provided as process subsequent to the cladding treatment of Figure 1.
  • a subsequent process step is provided of filling the TSV 100 with a conductive material 200 such as Copper wherein subsequent donor matter 231 is directed towards a TSV 100 by directing particles 231 of a subsequent donor 230 into the TSV 100.
  • the cladding and filling step are performed in the same process environment 250 with subsequent donors 130 230.
  • the TSV treatment involves filling the TSV 100, by having donor matter 231 directed towards a TSV 100 to be treated.
  • Suitable conductors 200 include Copper, Aluminum, Tungsten, Chromium, Polysilicon.
  • filling droplets preferably range between 2-5 micron.
  • a laser repetition rate is preferably at least 60-600kHz.
  • a donor refreshment module with high refresh rate capabilities is very advantageous, for example having a donor refreshment velocity relative to the TSV of more than 2 m/s or even more than 4 m/s.
  • the high laser repetition rate combined with a relative high number of about 60-200 of droplets per via provides an effective operation range for this via filling application.
  • TSVs may be advantageous to fill TSVs using droplets having a typical diameter of 2 - 5 micrometer.
  • TSV densities of 10 - 100 TSVs/mm A 2 to achieve sufficient, i.e. economically viable, rates, it is advantageous to provide a donor film between 200 and 1000 nanometers moving at speeds of 10 m/s or more with respect to the TSV to be filled.
  • the laser frequency of such a system may be e.g. 1 - 2 MHz or higher and the laser spot size 10 - 20 micrometers.
  • FIG 3 shows a schematic embodiment, wherein a donor guiding system 300 comprises a movable transparent carrier 310 that is kept distanced from wafer top surface 111 and having the donor material 230 provided on a face 311 thereof.
  • the laser beam 102 impinges on the donor 230 via a carrier face 312 opposite the donor 230 to direct a particle 231 of donor matter into the TSV 100.
  • the donor 230 is provided as a homogenous layer guided by the donor guiding system 300.
  • the donors 130, 230 may be provided in a premachined form, for example, comprising a sacrificial layer 311, a prepatterned donor layer and/or a donor provided in a matrix of sacrificial material.
  • a suitable thickness of the homogenous layer may range between 50 and 2000 nm, preferably in a range of 50-500 nm or even more preferably in a range of 50-250 nm.
  • the donor 130, 230 may be provided as a homogenous layer directly provided on a moving carrier 310.
  • the carrier 310 may be formed by a thin glass plate or any suitable transparent carrier, for example a glass plate of 1-5 mm that is rotated at high speed.
  • the distance to the die surface 111 is kept in a range of 1-50 micron, preferably 1-20 micron.
  • FIG. 4 shows a stepping embodiment for treatment of a TSV 100 in a repetitive treatment process.
  • a laser beam 102 is directed towards a scanning stage having a wafer 110 clamped thereon.
  • a fast beam modulator 400 (galvano mirror, polygon mirror, acousto-optic or electro-optic modulator etc.) provides a scanning movement of the laser beam 102 in a first direction.
  • the modulator is preferably controlled in a feed forward process wherein TSV coordinates are provided from an external source that provides the layout data of a chip die.
  • the layout data of a chip die can be controlled by the layout data of a chip die.
  • each single TSV 100 is treated by a multishot process where repeated steps are provided of guiding fresh donor material 230 relative to the TSV 100 and generating a particle 231.
  • the donor 230 is kept fixed relative to the wafer surface 111, and the laser beam 102 is scanned over the various TSVs 100 by a tilting movement of a beam modulator 410.
  • Step (2) the donor 230 is shifted relative to the wafer 110 and the scanning steps are repeated.
  • fresh donor material 230 is directed to each TSV 100.
  • Step (3) the same scanning movement is repeated with the donor material 230 shifted a further step.
  • the shifting steps can be performed in both planar directions to cover the entire wafer surface 111.
  • the wafer can be continuously moved in a direction perpendicular to the scanning beam movement.
  • Figure 5 shows a donor guiding system including a rotating carrier disk 500.
  • the rotating disc 500 may be provided on an actuator 510 that moves the disc 500 in a translational movement relative to the wafer 110, so that by the rotation fresh donor material 230 is brought over the TSV 110.
  • the disc 500 can be provided with a z-adjustment means, for example, of an autofocus type conventional in CD-ROM technology, to mechanically control the correct height of the donor above the wafer surface.
  • a z-adjustment means for example, of an autofocus type conventional in CD-ROM technology
  • the control can be provided by magnetic positioning or alternatively, as depicted, the donor guiding system comprises an air bearing 520 arranged to distance the homogenous layer 230 from the wafer top surface 111.
  • the air bearing 520 spans a width of about two or three dies 150, so that a height over a single die 150 is substantially kept constant within less then 1 micron and the donor 230 is kept at an optimal distance in a range of 1-20 micron.
  • the rotating disk 500 can be provided with a central air bearing 521 and a peripheral bearing 522; by fast rotating of the disk 500 the planar rigidity of the donor 230 is ensured.
  • the donor guiding system 500 is provided by a central air bearing 521 and a peripheral air bearing 522 spanning a donor layer 230 in a fast rotating movement. Placement of the air bearing system 520 on the wafer 110 ensures constant z-positioning of the donor material 230 relative to the wafer surface 111.
  • the air bearing 520 typically comprises a set of flow channels 522 and a bearing surface 523 conventionally known, so that the bearing surface 523 and the flow channels 524 can be tuned to provide an air bearing layer 525 ensuring constant z- positioning.
  • the disk actuator 510 comprises a controller 511 to adjust the rotation speed to keep the relative velocity to the TSV
  • the controller 511 controls the carrier disk 500 to rotate at a velocity of more than 4 m/s relative to the TSV 100 to be filled.
  • FIG. 6 shows a donor system including a tape guiding system 600.
  • the tape guiding system may include a premachined tape 610, for example, provided on a pair of roll-on/roll off tape spools (not shown) wherein the tape 610 is moved at high speed along a tape guiding system 600 adapted to provide the tape 610 at a constant height moving over a TSV 100 to be treated.
  • the tape 610 is provided endlessly and includes a regeneration system 650 , for instance by having the tape 610 refreshed in a stripping step (etching/reverse plating) and a deposition step (PVD or plating).
  • a regeneration system 650 for instance by having the tape 610 refreshed in a stripping step (etching/reverse plating) and a deposition step (PVD or plating).
  • regeneration system 650 is arranged for deposition of a homogenous layer 630 of donor material on the carrier 610 that is moved from the regeneration system 650 to a TSV 100 to be treated by a stepping or continuous movement.
  • depositing of donor material 630 can be provided on the carrier 610 prior to guiding the donor material 630 to the TSV 100 in a continuous process.
  • the guiding system 600 may optionally be equipped with z-height- sensor (not shown) for self-z-positioning to ensure constant z-positioning.
  • Figure 7 shows a SEM image 700 of experimental results of a series of molten depositions.
  • An optimal process window is illustrated as 710. It is found that in an average power range of 50-100 mW the droplet size is about 2-6 micron by having the distance to the die surface kept in a range of 1-20 micron.
  • Figure 8 provides further illustrative values of a transferred spot size vs a power for a Cupper donor layer having a thickness of about 150 nm for gap distances ranging from 0 to 40 micron. From the graph it is shown that the size decreases with growing energy and reduced distance.
  • 80, 120 and 200 nm Copper thickness are provided on a 1 mm thick glass carrier having an air gap kept fixed 1-10 ⁇ . A laser beam is scanned over fixed donor and carrier assembly. Additional process parameters are:

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Abstract

According to an aspect of the invention, there is provided a chip die TSV treatment device arranged for treatment of TSVs (100) in chip dies in a chip manufacturing process, comprising: a carrier plate (112) comprising clamping zones (114) on a top face arranged for placement of a wafer (150) having identified TSVs to be treated; a donor guiding system for guiding a donor (130) over a TSV to be treated, the guiding system adapted to keep the donor distanced from the wafer top surface; an alignable laser system (120) arranged for impinging a laser beam (102) on a side of the donor opposite a side facing the wafer; the laser beam tuned in timing, energy and direction to generate donor matter directed towards the TSV; and a control system for aligning the laser beam and the donor guiding system relative to the TSV. Advantages may further include reduction of process steps and process locations - in particular, obviating the necessity of a photolithographic process step - less material waste and combining manufacturing process stages of TSV cladding and filling.

Description

THROUGH SILICON VIA TREATMENT DEVICE AND METHOD FOR TREATMENT OF TSVS
IN A CHIP MANUFACTURING PROCESS
FIELD OF THE INVENTION
The invention relates to a chip die Through Silicon Via (TSV) treatment device and method arranged for treatment of TSVs in chip dies in a chip manufacturing process.
BACKGROUND OF THE INVENTION
In the ongoing miniaturization process of integrated circuit devices, the latest developments involve the manufacture of multiple stacks of ultrathin silicon dies having thicknesses reduced to sub 100 micron, or even in the 10- 50 micron zone. This stacking of ICs in a package is also referenced as 3D stacking. For a 3D stack to be functional, vertical connectors are necessary, known as Through Silicon Vias (TSVs). Generally, a TSV can be seen as a through hole through the thin die; this hole structure typically needs a wall liner treatment, in the remainder also referenced as cladding which may include for example, a barrier layer, isolation layer or seed layer. In addition, the TSV is provided with a filling of a conductive matter such as Cu. The width of a TSV is typically sub 10 micron, and a filling resolution of 2-5 micron is therefore desired. To obtain such resolution, traditionally
subtractive (photolithographic) techniques are applied, which involves complex steps including coating, fotoresisting, lithography, etching and rinsing which also involves substantial waste of functional matters that are not used. A desire exists to provide a via filling technique that can simplify and accelerate the manufacturing process and that can reduce the matter waste. It is noted that for such a technique to be economically feasible, there is a tradeoff between serial filling techniques that would involve direct writing and parallel techniques that can be provided by massive parallel techniques such as Reactive Ion Etching, Chemical Vapour Deposition, Phyisical Vapour Deposition or plating processes.
In this respect, it is noted that known conventional direct write
(printing) techniques do not provide a desired resolution and are typically limited to 10-20 micron, for instance, inject printing of fluids and molten metals and Laser Chemical Vapor Deposition (LCVD). In Appl. Phys. Lett. 89, 193107 (2006); Banks: "Nanodroplets deposited in microarrays" a method is disclosed for generating of very fine droplets.
SUMMARY OF THE INVENTION
According to an aspect of the invention, there is provided a chip die TSV treatment device arranged for treatment of TSVs in chip dies in a chip manufacturing process, comprising: a carrier plate comprising clamping zones on a top face arranged for placement of a wafer having identified TSVs to be treated; a donor guiding system for guiding a donor matter over a TSV to be treated, the guiding system adapted to keep the donor matter distanced from the wafer top surface; an alignable laser system arranged for impinging a laser beam on a side of the donor matter opposite a side facing the wafer; the laser beam tuned in timing, energy and direction to generate donor matter directed towards the TSV; and a control system for aligning the laser beam and the donor guiding system relative to the TSV.
In another aspect, there is provided a method of treatment of TSVs in chip dies in a chip manufacturing process, comprising: clamping a wafer having identified TSVs to be treated; providing a donor distanced from the wafer top surface; aligning the laser beam of the laser system and guiding the donor relative to an identified TSV on the wafer; and impinging a laser beam on a side of the donor matter opposite a side facing the wafer; the laser beam tuned in timing, energy and direction to generate donor matter directed towards a TSV to be treated. Surprisingly this technique is found to have throughput capability that is attractive especially when the number of TSV's on a chip die is limited to less than about 100 TSV/mm2. This corresponds to an amount that can advantageously be handled in a serial way compared to the traditional parallel treatment processes. Advantages may further include reduction of process steps and process locations - in particular, obviating the necessity of a photolithographic process step - less material waste and combining manufacturing process stages of TSV cladding and filling.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 shows a first embodiment of the present invention;
Figure 2 shows a second embodiment of the present invention;
Figure 3 shows a treatment device using a moving carrier;
Figure 4 shows a stepping embodiment for treatment of a TSV in a repetitive treatment process;
Figure 5 shows a donor system including a rotating disk;
Figure 6 shows a donor system including a tape guiding system;
Figure 7 shows experimental results of a series of molten depositions; and
Figure 8 shows a diagram indicating the droplet size vs laser power.
DETAILED DESCRIPTION OF EMBODIMENTS
Referring to Figure 1, there is provided a first embodiment of a chip die TSV treatment. In particular, the embodiment concerns cladding the TSV wall 101 by a plasma deposition process, by impinging the laser beam 102 on the donor 130 so as to generate a plasma 140 directed into the TSV 100. In this embodiment a silicon die 110 having vias 100 (schematically indicated with a bottom part 105, while this may or may not be the case) is cladded with a liner 106. In this example, the silicon die 110 is provided with a Silicon dioxide isolator wall 101 and a barrier layer 106 of any of the group of
Tantalum (Ta), Tantalum Nitride (TaN), Titanium (Ti), Titanium Nitride (TiN). Additional to the barrier layer a seed layer can be provided for an electroplating process, for example, a Copper liner. For any of these
claddings, the deposition step can be carried out as one embodiment of a method of treatment of TSVs 100 in chip dies 150 in a chip manufacturing process. The method comprises clamping a wafer 110 having identified TSVs 100 to be treated; providing a donor 130 distanced from the wafer top surface 111; aligning the laser beam 102 of the laser system 120 and guiding the donor 130 relative to an identified TSV 100 on the wafer 110; and impinging a laser beam 102 on a side 131 of the donor 130 opposite a side facing 132 the wafer 110; the laser beam 102 tuned in timing, energy and direction to generate donor matter in the form of a plasma 140 directed towards a TSV 100 to be treated.
Accordingly, a plasma 140 is generated of a donor 130 preferably chosen of a group of Tantalum (Ta), Tantalum Nitride (TaN), Titanium (Ti), Titanium Nitride (TiN). The clamp 112 may be made of silicon, glass or epoxy based support. In an embodiment, the clamp 112 is a vacuum clamp, for example, of porous aluminum, where a vacuum is provided underneath the wafer 110 and transferred to the clamping zones 113 via channels 114.
A second embodiment of the inventive method is schematically depicted in Figure 2, advantageously provided as process subsequent to the cladding treatment of Figure 1. Here, a subsequent process step is provided of filling the TSV 100 with a conductive material 200 such as Copper wherein subsequent donor matter 231 is directed towards a TSV 100 by directing particles 231 of a subsequent donor 230 into the TSV 100. Preferably, the cladding and filling step are performed in the same process environment 250 with subsequent donors 130 230. Accordingly, in this process, the TSV treatment involves filling the TSV 100, by having donor matter 231 directed towards a TSV 100 to be treated. In a multishot process repeated steps are provided of guiding fresh donor material 230 relative to the TSV 100 and impinging the laser beam 102 on the donor 230 so as to direct a particle 231 of donor matter into the TSV 100. Suitable conductors 200 include Copper, Aluminum, Tungsten, Chromium, Polysilicon.
To carry out the method in a suitable way for via filling purposes and for vias having a typical diameter in the range of 5-15 microns, an aspect ratio of 1:5 - 1:10, and a depth typically in the range of 20-100 microns, filling droplets preferably range between 2-5 micron. To achieve cost-effective filling at a rate of at least 1000 - 3000 vias per second, a laser repetition rate is preferably at least 60-600kHz.
For a donor to be refreshed at these rates a donor refreshment module with high refresh rate capabilities is very advantageous, for example having a donor refreshment velocity relative to the TSV of more than 2 m/s or even more than 4 m/s. The high laser repetition rate combined with a relative high number of about 60-200 of droplets per via provides an effective operation range for this via filling application.
It may be advantageous to fill TSVs using droplets having a typical diameter of 2 - 5 micrometer. For TSV densities of 10 - 100 TSVs/mmA2, to achieve sufficient, i.e. economically viable, rates, it is advantageous to provide a donor film between 200 and 1000 nanometers moving at speeds of 10 m/s or more with respect to the TSV to be filled. The laser frequency of such a system may be e.g. 1 - 2 MHz or higher and the laser spot size 10 - 20 micrometers.
Figure 3 shows a schematic embodiment, wherein a donor guiding system 300 comprises a movable transparent carrier 310 that is kept distanced from wafer top surface 111 and having the donor material 230 provided on a face 311 thereof. In this embodiment the laser beam 102 impinges on the donor 230 via a carrier face 312 opposite the donor 230 to direct a particle 231 of donor matter into the TSV 100. Preferably, the donor 230 is provided as a homogenous layer guided by the donor guiding system 300. To enhance the forming of a microdroplet, the donors 130, 230 may be provided in a premachined form, for example, comprising a sacrificial layer 311, a prepatterned donor layer and/or a donor provided in a matrix of sacrificial material. A suitable thickness of the homogenous layer may range between 50 and 2000 nm, preferably in a range of 50-500 nm or even more preferably in a range of 50-250 nm.
Alternatively, the donor 130, 230 may be provided as a homogenous layer directly provided on a moving carrier 310. Illustratively, the carrier 310 may be formed by a thin glass plate or any suitable transparent carrier, for example a glass plate of 1-5 mm that is rotated at high speed. The distance to the die surface 111 is kept in a range of 1-50 micron, preferably 1-20 micron.
Figure 4 shows a stepping embodiment for treatment of a TSV 100 in a repetitive treatment process. As schematically illustrated, a laser beam 102 is directed towards a scanning stage having a wafer 110 clamped thereon. A fast beam modulator 400 (galvano mirror, polygon mirror, acousto-optic or electro-optic modulator etc.) provides a scanning movement of the laser beam 102 in a first direction. The modulator is preferably controlled in a feed forward process wherein TSV coordinates are provided from an external source that provides the layout data of a chip die. Alternatively, the
modulator can be used as a scanning unit that maps the TSV coordinates in a prescan stage. Alternatively, an additional optical feedback system may provide laser alignment relative to the TSV. Optionally, a main beam is split into about 2-20 sub beams. In the embodiment, each single TSV 100 is treated by a multishot process where repeated steps are provided of guiding fresh donor material 230 relative to the TSV 100 and generating a particle 231. In Step (1) the donor 230 is kept fixed relative to the wafer surface 111, and the laser beam 102 is scanned over the various TSVs 100 by a tilting movement of a beam modulator 410. In Step (2) the donor 230 is shifted relative to the wafer 110 and the scanning steps are repeated. Thus fresh donor material 230 is directed to each TSV 100. In Step (3) the same scanning movement is repeated with the donor material 230 shifted a further step. The shifting steps can be performed in both planar directions to cover the entire wafer surface 111. Alternatively, the wafer can be continuously moved in a direction perpendicular to the scanning beam movement.
Figure 5 shows a donor guiding system including a rotating carrier disk 500. The rotating disc 500 may be provided on an actuator 510 that moves the disc 500 in a translational movement relative to the wafer 110, so that by the rotation fresh donor material 230 is brought over the TSV 110. The disc 500 can be provided with a z-adjustment means, for example, of an autofocus type conventional in CD-ROM technology, to mechanically control the correct height of the donor above the wafer surface. In another
embodiment, the control can be provided by magnetic positioning or alternatively, as depicted, the donor guiding system comprises an air bearing 520 arranged to distance the homogenous layer 230 from the wafer top surface 111. Advantageously, the air bearing 520 spans a width of about two or three dies 150, so that a height over a single die 150 is substantially kept constant within less then 1 micron and the donor 230 is kept at an optimal distance in a range of 1-20 micron. The rotating disk 500 can be provided with a central air bearing 521 and a peripheral bearing 522; by fast rotating of the disk 500 the planar rigidity of the donor 230 is ensured. This can be further enhanced by proper design, for example, by wings provided at the disk edges and proper design of the air flows, to provide Bernoulli clamping (not shown). Accordingly, in an embodiment, the donor guiding system 500 is provided by a central air bearing 521 and a peripheral air bearing 522 spanning a donor layer 230 in a fast rotating movement. Placement of the air bearing system 520 on the wafer 110 ensures constant z-positioning of the donor material 230 relative to the wafer surface 111. The air bearing 520 typically comprises a set of flow channels 522 and a bearing surface 523 conventionally known, so that the bearing surface 523 and the flow channels 524 can be tuned to provide an air bearing layer 525 ensuring constant z- positioning. In addition, the disk actuator 510 comprises a controller 511 to adjust the rotation speed to keep the relative velocity to the TSV
substantially constant. In an advantageous embodiment, the controller 511 controls the carrier disk 500 to rotate at a velocity of more than 4 m/s relative to the TSV 100 to be filled.
Figure 6 shows a donor system including a tape guiding system 600. The tape guiding system may include a premachined tape 610, for example, provided on a pair of roll-on/roll off tape spools (not shown) wherein the tape 610 is moved at high speed along a tape guiding system 600 adapted to provide the tape 610 at a constant height moving over a TSV 100 to be treated. Alternatively in the shown embodiment the tape 610 is provided endlessly and includes a regeneration system 650 , for instance by having the tape 610 refreshed in a stripping step (etching/reverse plating) and a deposition step (PVD or plating). According to this embodiment a
regeneration system 650 is arranged for deposition of a homogenous layer 630 of donor material on the carrier 610 that is moved from the regeneration system 650 to a TSV 100 to be treated by a stepping or continuous movement. Thus, depositing of donor material 630 can be provided on the carrier 610 prior to guiding the donor material 630 to the TSV 100 in a continuous process. The guiding system 600 may optionally be equipped with z-height- sensor (not shown) for self-z-positioning to ensure constant z-positioning.
Figure 7 shows a SEM image 700 of experimental results of a series of molten depositions. An optimal process window is illustrated as 710. It is found that in an average power range of 50-100 mW the droplet size is about 2-6 micron by having the distance to the die surface kept in a range of 1-20 micron.
Figure 8 provides further illustrative values of a transferred spot size vs a power for a Cupper donor layer having a thickness of about 150 nm for gap distances ranging from 0 to 40 micron. From the graph it is shown that the size decreases with growing energy and reduced distance. In an example, 80, 120 and 200 nm Copper thickness are provided on a 1 mm thick glass carrier having an air gap kept fixed 1-10 μηι. A laser beam is scanned over fixed donor and carrier assembly. Additional process parameters are:
Figure imgf000011_0001
While the invention has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative or exemplary and not restrictive; the invention is not limited to the disclosed embodiments. In particular, unless clear from context, aspects of various embodiments that are treated in various embodiments separately discussed are deemed disclosed in any combination variation of relevance and physically possible and the scope of the invention extends to such combinations. Other variations to the disclosed embodiments can be understood and by those skilled in the art in practicing the claimed invention, from a study of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the indefinite article "a" or "an" does not exclude a plurality. A single unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measured cannot be used to advantage. Any reference signs in the claims should not be construed as limiting the scope.

Claims

1. A chip die TSV treatment device arranged for treatment of TSVs in chip dies in a chip manufacturing process, comprising:
- a carrier plate comprising clamping zones on a top face arranged for placement of a wafer having identified TSVs to be treated;
- a donor guiding system for guiding a donor over a TSV to be treated, the guiding system adapted to keep the donor distanced from the wafer top surface;
- an alignable laser system arranged for impinging a laser beam on a side of the donor opposite a side facing the wafer; the laser beam tuned in timing, energy and direction to generate donor matter directed towards the TSV;
- a control system for aligning the laser beam and the donor guiding system relative to the TSV; wherein
- the donor guiding system comprises a movable transparent carrier that is kept distanced from the wafer top surface and having the donor provided on a face thereof; the laser beam arranged to impinge on the donor via a carrier face opposite the donor;
- the laser is a pulsed laser with a repetition rate of a least 60 kHz; and - the donor guiding system is arranged to move the donor at a velocity of more than 4 m/s relative to the TSV to be filled.
2. A chip die TSV treatment device according to claim 1, wherein the donor is provided as a homogenous layer guided by the donor guiding system.
3. A chip die TSV treatment device according to claim 2, wherein the homogenous layer has a thickness in a range between 50-250 nm.
4. A chip die TSV treatment device according to claim 2, wherein the donor guiding system comprises an air bearing arranged to distance the homogenous layer from the wafer top surface.
5. A chip die TSV treatment device according to claim 1, further comprising a regeneration system for providing a homogenous layer of donor material, the regeneration system arranged for deposition of a homogenous layer of donor material on the carrier that is moved from the regeneration system to a TSV to be treated by a stepping or continuous movement.
6. A chip die TSV treatment device according to claim 1, wherein the moving carrier is provided as a rotating disk or as tape guiding system.
7. A chip die TSV treatment device according to claim 1, wherein the donor is provided in a premachined form.
8. A chip die TSV treatment device according to claim 7, wherein premachined form comprises a sacrificial layer, a prepatterned donor layer and/or a donor provided in a matrix of sacrificial material.
9. A chip die TSV treatment device according to claim 1, wherein the laser system comprises a scanning mirror, an acousto optical modulator or an electro-optical modulator for directing the laser beam relative to the TSV.
10. A method of treatment of TSVs in chip dies in a chip manufacturing process, comprising:
- clamping of a wafer having identified TSVs to be treated;
- providing a donor distanced from the wafer top surface;
- aligning a laser beam of a laser system and guiding the donor relative to an identified TSV on the wafer; - impinging the laser beam on a side of the donor opposite a side facing the wafer; the laser beam tuned in timing, energy and direction to generate donor matter directed towards a TSV to be treated;
- moving a transparent carrier having the donor provided on a face
thereof and having the laser beam impinging on the donor via a carrier face opposite the donor;
- wherein the laser beam is pulsed with a frequency of at least 60 kHz and the donor moves at a velocity of more than 4 m/s relative to the TSV to be filled.
11. A method according to claim 10, wherein the TSV treatment involves filling the TSV, and wherein donor matter is directed towards a TSV to be treated, in a multishot process to perform repeated steps of guiding fresh donor material relative to the TSV and impinging the laser beam on the donor so as to direct a particle of donor matter into the TSV.
12. A method according to claim 10, wherein the TSV treatment involves cladding the TSV wall by a plasma deposition process, by impinging the laser beam on the donor so as to generate a plasma directed into the TSV.
13. A method according to claim 10, wherein TSV treatment involves first process steps of cladding the TSV wall, wherein donor matter is directed towards a TSV by generating a plasma directed into the TSV in a plasma deposition process; and further comprises second process steps of filling the TSV wherein subsequent donor matter is directed towards a TSV by directing particles of subsequent a donor matter into the TSV; wherein the cladding and filling step are performed in the same process environment with subsequent donors.
14. A method according to claim 10, wherein the distance to the die surface is kept in a range of 1-20 micron.
15. A method according to claim 10, further comprising depositing donor material on the carrier prior to guiding the donor to the TSV in a continuous process.
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