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WO2011016651A3 - 임프린트 리소그래피용 광경화형 수지 조성물 및 이를 이용한 임프린트 몰드의 제조 방법 - Google Patents

임프린트 리소그래피용 광경화형 수지 조성물 및 이를 이용한 임프린트 몰드의 제조 방법 Download PDF

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Publication number
WO2011016651A3
WO2011016651A3 PCT/KR2010/005035 KR2010005035W WO2011016651A3 WO 2011016651 A3 WO2011016651 A3 WO 2011016651A3 KR 2010005035 W KR2010005035 W KR 2010005035W WO 2011016651 A3 WO2011016651 A3 WO 2011016651A3
Authority
WO
WIPO (PCT)
Prior art keywords
resin composition
photocurable resin
mold
imprint
manufacturing
Prior art date
Application number
PCT/KR2010/005035
Other languages
English (en)
French (fr)
Other versions
WO2011016651A9 (ko
WO2011016651A2 (ko
Inventor
김병욱
유재원
김운용
곽은진
Original Assignee
주식회사 동진쎄미켐
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Publication of WO2011016651A2 publication Critical patent/WO2011016651A2/ko
Publication of WO2011016651A3 publication Critical patent/WO2011016651A3/ko
Publication of WO2011016651A9 publication Critical patent/WO2011016651A9/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/14—Methyl esters, e.g. methyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C08F220/24—Esters containing halogen containing perhaloalkyl radicals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/103—Esters of polyhydric alcohols or polyhydric phenols of trialcohols, e.g. trimethylolpropane tri(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/106—Esters of polycondensation macromers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

본 발명은 기판 상에 다양한 크기의 패턴을 형성하기 위한 임프린트 리소그래피용 광경화형 수지 조성물 및 이를 이용한 임프린트 몰드의 제조방법에 관한 것으로, 상기 광경화형 수지 조성물은 접착성이 우수하여 플라스틱, 금속, 유리 등의 다양한 기재에 적용될 수 있고, 내오염성이 우수할 뿐 아니라 몰드 표면의 표면 에너지 조정으로 뛰어난 이형성을 나타내며, 가교성이 우수하여 유기용매에 대한 비팽윤 특성을 가지며, 우수한 기계적 특성과 함께 높은 복원력 및 투과율을 나타내어 임프린트 리소그래피용 몰드의 제조에 유용하다.
PCT/KR2010/005035 2009-08-07 2010-07-30 임프린트 리소그래피용 광경화형 수지 조성물 및 이를 이용한 임프린트 몰드의 제조 방법 WO2011016651A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0072951 2009-08-07
KR1020090072951A KR20110015304A (ko) 2009-08-07 2009-08-07 임프린트 리소그래피용 광경화형 수지 조성물 및 이를 이용한 임프린트 몰드의 제조 방법

Publications (3)

Publication Number Publication Date
WO2011016651A2 WO2011016651A2 (ko) 2011-02-10
WO2011016651A3 true WO2011016651A3 (ko) 2011-06-09
WO2011016651A9 WO2011016651A9 (ko) 2011-07-28

Family

ID=43544768

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005035 WO2011016651A2 (ko) 2009-08-07 2010-07-30 임프린트 리소그래피용 광경화형 수지 조성물 및 이를 이용한 임프린트 몰드의 제조 방법

Country Status (2)

Country Link
KR (1) KR20110015304A (ko)
WO (1) WO2011016651A2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9619741B1 (en) 2011-11-21 2017-04-11 Dynamics Inc. Systems and methods for synchronization mechanisms for magnetic cards and devices
WO2013154112A1 (ja) 2012-04-10 2013-10-17 ダイキン工業株式会社 インプリント用樹脂モールド材料組成物
EP2825359B1 (en) 2012-04-13 2017-02-01 Nanogriptech, LLC Method of molding simple or complex micro and/or nanopatterned features on both planar or non-planar molded objects and surfaces and the molded objects produced using same
JP6342487B2 (ja) 2013-09-30 2018-06-13 エルジー ディスプレイ カンパニー リミテッド 有機電子装置の製造方法
CN104932197B (zh) * 2015-05-26 2020-01-17 南方科技大学 一种纳米压印用膨胀聚合压印胶
KR102206859B1 (ko) * 2015-09-23 2021-01-22 코오롱인더스트리 주식회사 유기발광다이오드용 오버코트층 형성용 조성물 및 이를 포함하는 유기발광다이오드
KR102712660B1 (ko) 2016-07-28 2024-10-04 삼성디스플레이 주식회사 패터닝된 경화물의 제조 방법 및 패터닝된 경화물
EP4160312A1 (en) * 2021-10-04 2023-04-05 Joanneum Research Forschungsgesellschaft mbH Elastic embossing lacquer having high optical dispersion

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040059013A1 (en) * 2000-01-14 2004-03-25 Takayoshi Tanabe Photocurable resin composition and optical parts
KR20050073017A (ko) * 2004-01-08 2005-07-13 삼성전자주식회사 Ｐｄｍｓ 일래스토머 스탬프 및 이를 이용한 미세패턴형성 방법
US20050160934A1 (en) * 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
EP1808447A1 (en) * 2006-01-12 2007-07-18 Hitachi Chemical Co., Ltd. Photocurable resin composition and a method for forming a pattern
WO2008091114A1 (en) * 2007-01-24 2008-07-31 Samsung Electronics Co., Ltd. Photo-curable composition having inherently excellent releasing property and pattern transfer property, method for transferring pattern using the composition and light recording medium having polymer pattern layer produced using the composition
KR20090084340A (ko) * 2008-02-01 2009-08-05 주식회사 동진쎄미켐 광경화형 수지 조성물 및 이를 이용한 수지 몰드의제조방법
US20090256287A1 (en) * 2008-04-09 2009-10-15 Peng-Fei Fu UV Curable Silsesquioxane Resins For Nanoprint Lithography
KR20090131648A (ko) * 2008-06-18 2009-12-29 후지필름 가부시키가이샤 나노 임프린트용 경화성 조성물, 패턴 형성 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040059013A1 (en) * 2000-01-14 2004-03-25 Takayoshi Tanabe Photocurable resin composition and optical parts
KR20050073017A (ko) * 2004-01-08 2005-07-13 삼성전자주식회사 Ｐｄｍｓ 일래스토머 스탬프 및 이를 이용한 미세패턴형성 방법
US20050160934A1 (en) * 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
EP1808447A1 (en) * 2006-01-12 2007-07-18 Hitachi Chemical Co., Ltd. Photocurable resin composition and a method for forming a pattern
WO2008091114A1 (en) * 2007-01-24 2008-07-31 Samsung Electronics Co., Ltd. Photo-curable composition having inherently excellent releasing property and pattern transfer property, method for transferring pattern using the composition and light recording medium having polymer pattern layer produced using the composition
KR20090084340A (ko) * 2008-02-01 2009-08-05 주식회사 동진쎄미켐 광경화형 수지 조성물 및 이를 이용한 수지 몰드의제조방법
US20090256287A1 (en) * 2008-04-09 2009-10-15 Peng-Fei Fu UV Curable Silsesquioxane Resins For Nanoprint Lithography
KR20090131648A (ko) * 2008-06-18 2009-12-29 후지필름 가부시키가이샤 나노 임프린트용 경화성 조성물, 패턴 형성 방법

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Publication number Publication date
WO2011016651A9 (ko) 2011-07-28
KR20110015304A (ko) 2011-02-15
WO2011016651A2 (ko) 2011-02-10

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