[go: up one dir, main page]

WO2010080446A3 - Microcrystalline silicon alloys for thin film and wafer based solar applications - Google Patents

Microcrystalline silicon alloys for thin film and wafer based solar applications Download PDF

Info

Publication number
WO2010080446A3
WO2010080446A3 PCT/US2009/068305 US2009068305W WO2010080446A3 WO 2010080446 A3 WO2010080446 A3 WO 2010080446A3 US 2009068305 W US2009068305 W US 2009068305W WO 2010080446 A3 WO2010080446 A3 WO 2010080446A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
microcrystalline silicon
based solar
layers
wafer based
Prior art date
Application number
PCT/US2009/068305
Other languages
French (fr)
Other versions
WO2010080446A2 (en
Inventor
Shuran Sheng
Yongkee Chae
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2011542409A priority Critical patent/JP2012513125A/en
Priority to CN2009801512659A priority patent/CN102272950A/en
Priority to EP09837898.7A priority patent/EP2359411A4/en
Publication of WO2010080446A2 publication Critical patent/WO2010080446A2/en
Publication of WO2010080446A3 publication Critical patent/WO2010080446A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

A method and apparatus for forming solar cells is provided. Doped crystalline semiconductor alloys including carbon, oxygen, and nitrogen are used as light-trapping enhancement layers and charge collection layers for thin-film solar cells. The semiconductor alloy layers are formed by providing semiconductor source compound and a co-component source compound to a processing chamber and ionizing the gases to deposit a layer on a substrate. The alloy layers provide improved control of refractive index, wide optical bandgap and high conductivity.
PCT/US2009/068305 2008-12-19 2009-12-16 Microcrystalline silicon alloys for thin film and wafer based solar applications WO2010080446A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011542409A JP2012513125A (en) 2008-12-19 2009-12-16 Microcrystalline silicon alloys for thin film and wafer based solar applications
CN2009801512659A CN102272950A (en) 2008-12-19 2009-12-16 Microcrystalline silicon alloys for thin-film and wafer-based solar applications
EP09837898.7A EP2359411A4 (en) 2008-12-19 2009-12-16 MICROCRYSTALLINE SILICON ALLOYS FOR SOLAR APPLICATIONS BASED ON THIN FILMS AND SLICES

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13939008P 2008-12-19 2008-12-19
US61/139,390 2008-12-19

Publications (2)

Publication Number Publication Date
WO2010080446A2 WO2010080446A2 (en) 2010-07-15
WO2010080446A3 true WO2010080446A3 (en) 2010-10-28

Family

ID=42317062

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/068305 WO2010080446A2 (en) 2008-12-19 2009-12-16 Microcrystalline silicon alloys for thin film and wafer based solar applications

Country Status (6)

Country Link
EP (1) EP2359411A4 (en)
JP (1) JP2012513125A (en)
KR (1) KR20110106889A (en)
CN (1) CN102272950A (en)
TW (1) TW201029208A (en)
WO (1) WO2010080446A2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2426737A1 (en) * 2010-09-03 2012-03-07 Applied Materials, Inc. Thin-film solar fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack
EP2439792A1 (en) * 2010-10-05 2012-04-11 Applied Materials, Inc. Thin-film solar cell fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack
JP2012114296A (en) * 2010-11-25 2012-06-14 Mitsubishi Electric Corp Thin-film solar cell and method of manufacturing the same
US8088990B1 (en) * 2011-05-27 2012-01-03 Auria Solar Co., Ltd. Color building-integrated photovoltaic (BIPV) panel
TWI473281B (en) * 2011-04-01 2015-02-11 Nexpower Technology Corp Thin film solar cell structure
TW201246588A (en) * 2011-05-06 2012-11-16 Auria Solar Co Ltd Solar cell module and manufacturing method thereof
EP2533318A1 (en) * 2011-06-08 2012-12-12 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Thin film solar cell module and greenhouse provided with the same
DE102011081655A1 (en) * 2011-08-26 2013-02-28 Robert Bosch Gmbh Thin film solar cell
WO2013106439A1 (en) * 2012-01-13 2013-07-18 Applied Materials, Inc. High work-function buffer layers for silicon-based photovoltaic devices
US20150136210A1 (en) * 2012-05-10 2015-05-21 Tel Solar Ag Silicon-based solar cells with improved resistance to light-induced degradation
TWI484076B (en) * 2012-07-20 2015-05-11 Sino American Silicon Prod Inc Improved solar polysilicon wafer fabrication method and solar polysilicon wafer
KR20150078549A (en) * 2013-12-31 2015-07-08 한국과학기술원 Apparatus for manufacturing integrated thin film solar cell
US10192717B2 (en) * 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
JP2017143103A (en) * 2016-02-08 2017-08-17 本田技研工業株式会社 Power generation battery
CN111640816B (en) * 2020-06-10 2025-07-08 通威太阳能(金堂)有限公司 Heterojunction solar cell, laminated tile assembly and manufacturing method
CN112018207B (en) * 2020-08-14 2023-02-03 隆基绿能科技股份有限公司 Laminated solar cell and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045129A (en) * 2003-07-24 2005-02-17 Kaneka Corp Stacked photoelectric converter device and its manufacturing method
JP2008060605A (en) * 2007-11-06 2008-03-13 Kaneka Corp Stacked photoelectric converter
JP2008181965A (en) * 2007-01-23 2008-08-07 Sharp Corp Multilayer photoelectric conversion device and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7189917B2 (en) * 2003-03-26 2007-03-13 Canon Kabushiki Kaisha Stacked photovoltaic device
JP2009231505A (en) * 2008-03-21 2009-10-08 Sanyo Electric Co Ltd Solar battery

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045129A (en) * 2003-07-24 2005-02-17 Kaneka Corp Stacked photoelectric converter device and its manufacturing method
JP2008181965A (en) * 2007-01-23 2008-08-07 Sharp Corp Multilayer photoelectric conversion device and manufacturing method thereof
JP2008060605A (en) * 2007-11-06 2008-03-13 Kaneka Corp Stacked photoelectric converter

Also Published As

Publication number Publication date
KR20110106889A (en) 2011-09-29
EP2359411A4 (en) 2013-07-10
TW201029208A (en) 2010-08-01
EP2359411A2 (en) 2011-08-24
CN102272950A (en) 2011-12-07
WO2010080446A2 (en) 2010-07-15
JP2012513125A (en) 2012-06-07

Similar Documents

Publication Publication Date Title
WO2010080446A3 (en) Microcrystalline silicon alloys for thin film and wafer based solar applications
WO2012037382A3 (en) Deposition processes and devices for photovoltaics
TW200703672A (en) Thermal process for creation of an in-situ junction layer in CIGS
CN101548032A (en) Low temperature doping method for silicon wafer devices
WO2010080358A3 (en) Edge film removal process for thin film solar cell applications
JP2012151506A5 (en)
BR112013006364A2 (en) high cost and low cost crystalline silicon solar cell manufacturing method, process and technology
WO2010094048A3 (en) Solar cell absorber layer formed from equilibrium precursor(s)
CN101807618B (en) Novel laminated film solar cell and manufacturing method thereof
WO2008147113A3 (en) High efficiency solar cell, method of fabricating the same and apparatus for fabricating the same
GB2517325A (en) High efficiency solar cells fabricated by inexpensive PECVD
GB2504430A (en) Tandem solar cell with improved tunnel junction
Lam et al. Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin‐Film Structures
CN103572243B (en) A kind of zinc antimonide base thermal electric film and preparation method thereof
WO2012065957A3 (en) Improved a-si:h absorber layer for a-si single- and multijunction thin film silicon solar cell
US20110226318A1 (en) Photovoltaic device including flexible or inflexibel substrate and method for manufacturing the same
Weng et al. Improving the microstructure and electrical properties of aluminum induced polysilicon thin films using silicon nitride capping layer
WO2012165860A8 (en) METHOD OF MANUFACTURING CIGS THIN FILM WITH UNIFORM Ga DISTRIBUTION
CN101882653A (en) Preparation method of solar cell based on nanometer CdS film
EP1717341A4 (en) METHOD FOR PRODUCING A TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING A PHOTOELECTRIC TANDEM THIN LAYER CONVERSION
CN101794828B (en) film system of thin film solar cell, thin film solar cell and manufacturing method thereof
WO2011119332A3 (en) Methods of forming a thin-film solar energy device
CN103107240A (en) Polycrystalline silicon thin-film solar cell and manufacture method thereof
Heinß et al. High purity deposition of silicon layers with rates> to 300 nm/s
CN202977493U (en) Polysilicon thin-film solar cell

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980151265.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09837898

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2009837898

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2011542409

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20117016901

Country of ref document: KR

Kind code of ref document: A