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WO2010049229A3 - Method for producing a solar cell - Google Patents

Method for producing a solar cell Download PDF

Info

Publication number
WO2010049229A3
WO2010049229A3 PCT/EP2009/062526 EP2009062526W WO2010049229A3 WO 2010049229 A3 WO2010049229 A3 WO 2010049229A3 EP 2009062526 W EP2009062526 W EP 2009062526W WO 2010049229 A3 WO2010049229 A3 WO 2010049229A3
Authority
WO
WIPO (PCT)
Prior art keywords
main surface
aluminum
doping
solar cell
producing
Prior art date
Application number
PCT/EP2009/062526
Other languages
German (de)
French (fr)
Other versions
WO2010049229A2 (en
Inventor
Hans-Joachim Krokoszinski
Karsten Meyer
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to EP09783485A priority Critical patent/EP2351109A2/en
Publication of WO2010049229A2 publication Critical patent/WO2010049229A2/en
Publication of WO2010049229A3 publication Critical patent/WO2010049229A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The invention relates to a method for producing a solar cell from (a) an n-doped semiconductor substrate, especially from silicon, which has a main surface that serves as the light incidence side when used and a second main surface that serves as the back, an n+ region, front surface field, configured in the first main surface, and an p+ emitter configured in the second main surface by doping with aluminum, or (b) a p-doped substrate, especially silicon, which has an n+ emitter configured on the first main side and an p+ region, i.e. a back surface field, configured in the second main surface by doping with aluminum, the doping with aluminum being carried out by diffusion of the aluminum from an aluminum-containing source layer applied to the second main surface, in such a manner that the Al concentration profile, starting from the second main surface towards the semiconductor substrate, substantially has a profile where the highest Al concentration is on the second main surface or directly next to it.
PCT/EP2009/062526 2008-10-31 2009-09-28 Method for producing a solar cell and solar cell WO2010049229A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP09783485A EP2351109A2 (en) 2008-10-31 2009-09-28 Method for producing a solar cell and solar cell

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008054093.5 2008-10-31
DE102008054093 2008-10-31
DE102009008786.9 2009-02-13
DE102009008786A DE102009008786A1 (en) 2008-10-31 2009-02-13 Process for producing a solar cell and solar cell

Publications (2)

Publication Number Publication Date
WO2010049229A2 WO2010049229A2 (en) 2010-05-06
WO2010049229A3 true WO2010049229A3 (en) 2011-01-06

Family

ID=42129354

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/062526 WO2010049229A2 (en) 2008-10-31 2009-09-28 Method for producing a solar cell and solar cell

Country Status (3)

Country Link
EP (1) EP2351109A2 (en)
DE (1) DE102009008786A1 (en)
WO (1) WO2010049229A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010028189B4 (en) * 2010-04-26 2018-09-27 Solarworld Industries Gmbh solar cell
EP2398071B1 (en) * 2010-06-17 2013-01-16 Imec Method for forming a doped region in a semiconductor layer of a substrate and use of such method
DE102010017590B4 (en) * 2010-06-25 2014-01-09 Hanwha Q.CELLS GmbH Both sides contacted solar cell and solar module
DE102013204098A1 (en) 2013-03-11 2014-09-11 SolarWorld Industries Thüringen GmbH Method for producing a back contact photovoltaic cell and back contact photovoltaic cell
DE102013204468A1 (en) 2013-03-14 2014-09-18 Robert Bosch Gmbh Method and device for producing an electrically conductive layer on a carrier material
DE102013204465A1 (en) 2013-03-14 2014-09-18 Robert Bosch Gmbh Apparatus and method for laser transfer metallization
DE102013106272B4 (en) * 2013-06-17 2018-09-20 Hanwha Q Cells Gmbh Wafer solar cell and solar cell manufacturing process

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0776051A2 (en) * 1995-11-22 1997-05-28 Ebara Solar Inc Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
US5766964A (en) * 1994-09-09 1998-06-16 Georgia Tech Research Corporation Processes for producing low cost, high efficiency silicon solar cells
WO2000055923A1 (en) * 1999-03-17 2000-09-21 Ebara Solar, Inc. An aluminum alloy back junction solar cell and a process for fabrication thereof
WO2001024279A1 (en) * 1999-09-02 2001-04-05 Stichting Energieonderzoek Centrum Nederland Method for the production of a semiconductor device
WO2002103810A1 (en) * 2001-06-19 2002-12-27 Bp Solar Limited Process for manufacturing a solar cell

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
JP2706113B2 (en) * 1988-11-25 1998-01-28 工業技術院長 Photoelectric conversion element
DE102007012277A1 (en) * 2007-03-08 2008-09-11 Gebr. Schmid Gmbh & Co. Process for producing a solar cell and solar cell produced therewith
DE102008013446A1 (en) * 2008-02-15 2009-08-27 Ersol Solar Energy Ag Process for producing monocrystalline n-silicon solar cells and solar cell, produced by such a process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766964A (en) * 1994-09-09 1998-06-16 Georgia Tech Research Corporation Processes for producing low cost, high efficiency silicon solar cells
EP0776051A2 (en) * 1995-11-22 1997-05-28 Ebara Solar Inc Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
WO2000055923A1 (en) * 1999-03-17 2000-09-21 Ebara Solar, Inc. An aluminum alloy back junction solar cell and a process for fabrication thereof
WO2001024279A1 (en) * 1999-09-02 2001-04-05 Stichting Energieonderzoek Centrum Nederland Method for the production of a semiconductor device
WO2002103810A1 (en) * 2001-06-19 2002-12-27 Bp Solar Limited Process for manufacturing a solar cell

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GEE J M ET AL: "Boron-doped back-surface fields using an aluminum-alloy process Si solar cells", CONFERENCE RECORD OF THE 26TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 19970929; 19970929 - 19971003 NEW YORK, NY : IEEE, US LNKD- DOI:10.1109/PVSC.1997.654082, 29 September 1997 (1997-09-29), pages 275 - 278, XP010267780, ISBN: 978-0-7803-3767-1 *
KING R R ET AL: "The effect of aluminum and boron solid-source doping on recombination in silicon solar cells", PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE. LAS VEGAS, OCT. 7 - 11, 1991; [PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE], NEW YORK, IEEE, US LNKD- DOI:10.1109/PVSC.1991.169214, vol. CONF. 22, 7 October 1991 (1991-10-07), pages 229 - 234, XP010039282, ISBN: 978-0-87942-636-1 *
LOLGEN P ET AL: "Aluminium back-surface field doping profiles with surface recombination velocities below 200 cm/s", PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE. LOUISVILLE, MAY 10 - 14, 1993; [PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE], NEW YORK, IEEE, US LNKD- DOI:10.1109/PVSC.1993.347046, vol. CONF. 23, 10 May 1993 (1993-05-10), pages 236 - 242, XP010113207, ISBN: 978-0-7803-1220-3 *

Also Published As

Publication number Publication date
WO2010049229A2 (en) 2010-05-06
EP2351109A2 (en) 2011-08-03
DE102009008786A1 (en) 2010-06-10

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