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WO2010032822A1 - Capteur de système micro-électromécanique - Google Patents

Capteur de système micro-électromécanique Download PDF

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Publication number
WO2010032822A1
WO2010032822A1 PCT/JP2009/066356 JP2009066356W WO2010032822A1 WO 2010032822 A1 WO2010032822 A1 WO 2010032822A1 JP 2009066356 W JP2009066356 W JP 2009066356W WO 2010032822 A1 WO2010032822 A1 WO 2010032822A1
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WO
WIPO (PCT)
Prior art keywords
layer
metal
support
mems sensor
movable
Prior art date
Application number
PCT/JP2009/066356
Other languages
English (en)
Japanese (ja)
Inventor
小林　潔
佐藤　清
宜隆 宇都
一好 高橋
高橋　亨
鈴木　潤
Original Assignee
アルプス電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アルプス電気株式会社 filed Critical アルプス電気株式会社
Publication of WO2010032822A1 publication Critical patent/WO2010032822A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0172—Seals
    • B81C2203/019—Seals characterised by the material or arrangement of seals between parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

Definitions

  • the present invention relates to a MEMS sensor formed by finely processing a silicon substrate, and more particularly to a MEMS sensor capable of preventing molten metal from flowing out to a movable region.
  • a movable electrode portion and a fixed electrode portion are formed by finely processing an SOI layer constituting an SOI (Silicon On Insulator) substrate.
  • This fine sensor is used as an acceleration sensor, a pressure sensor, a vibration gyro, a micro relay, or the like depending on the operation of the movable electrode portion.
  • FIG. 13 is a partial cross-sectional view of a conventional MEMS sensor
  • FIG. 14 is an enlarged cross-sectional view of the vicinity of a support conduction portion (anchor portion) shown in FIG.
  • the MEMS sensor shown in FIG. 13 includes an SOI substrate including a support substrate 200, an oxide insulating layer 203, and an SOI layer 210, and a wiring substrate 211 provided to face the SOI substrate.
  • the movable region 201 composed of the movable electrode portion and the fixed electrode portion, and the support conduction portions 202 of the movable electrode portion and the fixed electrode portion are formed by finely processing the SOI layer 210.
  • a first connection metal layer 212 is provided on the surface 202 a of the support conducting portion 202.
  • the wiring substrate 211 includes a silicon substrate 204, an insulating layer 205, a lead layer 206, and the like, and a second connection metal layer 213 is formed on the side facing the support conduction portion 202.
  • the second connection metal layer 213 is electrically connected to the lead layer 206.
  • the 1st connection metal layer 212 and the 2nd connection metal layer 213 are joined. JP 2005-236159 A
  • an object of the present invention is to provide a MEMS sensor that can appropriately prevent the molten metal from flowing out to the movable region.
  • the MEMS sensor according to the present invention includes a first substrate laminated in the order of a support substrate, an intermediate layer, and a functional layer, a movable electrode portion formed on the functional layer, and the fixed electrode portion facing the functional layer. And a wiring board provided with a conduction path to The functional layer is fixedly supported by the intermediate layer, and a bonding portion is formed to be bonded to the wiring board via a metal bonding layer. A metal outflow prevention portion for the metal bonding layer is formed on at least one surface of the bonding portion and the wiring board facing the bonding portion.
  • the joint portion is a support conduction portion connected to each of the movable electrode portion and the fixed electrode portion.
  • the metal outflow prevention portion is formed so as to surround the metal bonding layer because the molten metal can be effectively prevented from flowing out to the movable region.
  • the joint portion is a frame body that is formed separately from the movable electrode portion and the fixed electrode portion, and surrounds a movable region of the movable electrode portion, and the frame body and the wiring board
  • the metal sealing layer which is the said metal joining layer may be formed in between.
  • the metal outflow prevention portion is formed on the inner side that is on the movable region side than the metal seal layer, because the molten metal can be effectively prevented from flowing out to the movable region.
  • the metal outflow prevention portion is formed of a groove or a wall. Thereby, it is possible to prevent the molten metal from flowing out to the movable region effectively with a simple structure.
  • the metal bonding layer is formed by eutectic bonding or diffusion between the first connection metal layer formed on the surface of the bonding portion and the second connection metal layer formed on the surface of the wiring board. It is preferably formed by bonding. Thereby, the 1st connection metal layer and the 2nd connection metal layer can be joined firmly. Further, the thickness dimension of the bonding layer is thin, and the distance between the support substrate and the wiring substrate can be determined with high accuracy. Therefore, a MEMS sensor having excellent dimensional accuracy and strong bonding strength can be obtained.
  • the wiring board is electrically connected to a silicon substrate, an insulating layer on the surface of the silicon substrate, and each of the movable electrode portion and the fixed electrode portion embedded in the insulating layer. And a lead layer.
  • the wiring board can be formed with a simple structure, and the MEMS sensor can be thinned.
  • the MEMS sensor of the present invention it is possible to appropriately prevent the molten metal from flowing out to the movable region. Accordingly, it is possible to prevent the movement of the movable electrode part and the short circuit between the movable electrode part and the fixed electrode part.
  • FIG. 1 shows a MEMS sensor according to an embodiment of the present invention, and is a plan view showing a movable electrode part, a fixed electrode part, and a frame.
  • the support substrate and the wiring substrate are not shown.
  • 2 is an enlarged view of a portion II in FIG. 1
  • FIG. 3 is an enlarged view of a portion III.
  • FIG. 4 is a cross-sectional view showing the entire structure of the MEMS sensor, and corresponds to a cross-sectional view taken along line IV-IV in FIG.
  • FIG. 5 is a partially enlarged cross-sectional view showing an enlarged view of the vicinity of the support conductive portion 12 in FIG. 4 and the wiring board facing the support conductive portion 12, and FIG.
  • FIG. 6 is a plan view of the support conductive portion 12 in FIG. 7 to 9 are partial enlarged cross-sectional views of a MEMS sensor according to another embodiment different from FIG. 5, and FIG. 10 is a plan view for explaining a formation position of a metal outflow prevention portion formed on the frame. . 5 and 7 to 9 are upside down with respect to FIG.
  • an SOI layer (functional layer) 10 is sandwiched between the support substrate 1 and the wiring substrate 2.
  • Each part of the support substrate 1 and the SOI layer 10 is joined via oxide insulating layers (intermediate layers) 3a, 3b, 3c.
  • the support substrate 1, the SOI layer 10, and the oxide insulating layers 3a, 3b, and 3c are formed by finely processing an SOI (Silicon-on-Insulator) substrate (first substrate).
  • SOI Silicon-on-Insulator
  • a first fixed electrode portion 11, a second fixed electrode portion 13, a movable electrode portion 15 and a frame body 25 are formed separately. Further, a part of the oxide insulating layer is removed to form oxide insulating layers 3a, 3b, 3c separated from each other.
  • the planar shape of the SOI layer 10 is 180 degrees rotationally symmetric with respect to the center (centroid) O, and the vertical direction (Y direction) with respect to a line passing through the center O and extending in the X direction. ).
  • the first fixed electrode portion 11 is provided on the Y1 side from the center O.
  • a square support conduction portion (anchor portion) 12 is integrally formed at a position approaching the center O.
  • the support conducting portion 12 is fixed to the surface 1a of the support substrate 1 by an oxide insulating layer 3a.
  • the first fixed electrode part 11 only the support conduction part 12 is fixed to the surface 1a of the support substrate 1 by the oxide insulation layer 3a, and the other part is an oxide insulation layer between the support substrate 1 and the other part.
  • a gap having a distance corresponding to the thickness of the oxide insulating layer 3a is formed between the support substrate 1 and the surface 1a.
  • the first fixed electrode portion 11 has an electrode support portion 11a having a certain width dimension extending linearly from the support conducting portion 12 in the Y1 direction.
  • a plurality of counter electrodes 11b are integrally formed on the X1 side of the electrode support portion 11a, and a plurality of counter electrodes 11c are integrally formed on the X2 side of the electrode support portion 11a.
  • FIG. 2 shows one counter electrode 11c.
  • Each of the plurality of counter electrodes 11c extends linearly in the X2 direction, and the width dimension in the Y direction is constant.
  • the plurality of counter electrodes 11c are arranged in a comb-like shape with a certain interval in the Y direction.
  • the other counter electrode 11b extending to the X1 side and the counter electrode 11c extending in the X2 direction have a bilaterally symmetric shape with respect to a line extending in the Y direction through the center O.
  • the second fixed electrode portion 13 is provided on the Y2 side from the center O.
  • the second fixed electrode portion 13 and the first fixed electrode portion 11 are symmetrical in the vertical direction (Y direction) with respect to a line extending in the X direction through the center O. That is, the second fixed electrode portion 13 has a rectangular support conduction portion (anchor portion) 14 provided at a position approaching the center O, and a constant width dimension extending linearly from the support conduction portion 14 in the Y2 direction. Electrode support portion 13a.
  • a plurality of counter electrodes 13b extending integrally from the electrode support portion 13a are provided on the X1 side of the electrode support portion 13a, and a plurality of counter electrodes 13c extending integrally from the electrode support portion 13a are provided on the X2 side of the electrode support portion 13a. Is provided.
  • the counter electrode 13c extends linearly in the X2 direction, has a constant width dimension, and is formed in parallel with each other at a constant interval in the Y direction.
  • the counter electrode 13b on the X1 side also linearly extends in the X1 direction with a constant width dimension, and extends in parallel in the Y direction at constant intervals.
  • the support conductive portion 14 is fixed to the surface 1a of the support substrate 1 through the oxide insulating layer 3a.
  • the other portions of the electrode support portion 13a and the counter electrodes 13b and 13c are removed from the surface 1a of the support substrate 1, and the electrode support portion 13a and the counter electrodes 13b and 13c are supported.
  • a gap having an interval corresponding to the thickness of the oxide insulating layer is formed between the substrate 1 and the surface 1a.
  • the SOI layer 10 shown in FIG. 1 has a movable area inside the rectangular frame 25, and the movable area 15 is a portion excluding the first fixed electrode section 11 and the second fixed electrode section 13 in the movable area. It has become.
  • the movable electrode portion 15 is formed separately from the first fixed electrode portion 11, the second fixed electrode portion 13, and the frame body 25.
  • the movable electrode portion 15 has a first support arm portion 16 extending in the Y1-Y2 direction on the X1 side with respect to the center O, and at a position close to the X1 side of the center O.
  • a rectangular support conduction portion (anchor portion) 17 formed integrally with the first support arm portion 16 is provided.
  • the movable electrode portion 15 has a second support arm portion 18 extending in the Y1-Y2 direction on the X2 side with respect to the center O, and the second support arm portion is positioned closer to the X2 side of the center O.
  • a square support conduction part (anchor part) 19 formed integrally with the reference numeral 18 is provided.
  • the portion sandwiched between the first support arm portion 16 and the second support arm portion 18 and the portion excluding the first fixed electrode portion 11 and the second fixed electrode portion 13 is the weight portion 20.
  • the edge portion on the Y1 side of the weight portion 20 is supported by the first support arm portion 16 via the elastic support portion 21 and supported by the second support arm portion 18 via the elastic support portion 23.
  • the edge portion on the Y1 side of the weight portion 20 is supported by the first support arm portion 16 via the elastic support portion 22 and supported by the second support arm portion 18 via the elastic support portion 24. Yes.
  • a plurality of movable counter electrodes 20a extending from the X1 side edge of the weight portion 20 to the X2 side are integrally formed, and from the X2 side edge of the weight portion 20 to the X1 side.
  • a plurality of movable counter electrodes 20b extending are integrally formed.
  • the movable counter electrode 20b formed integrally with the weight portion 20 is opposed to the side on the Y2 side of the counter electrode 11c of the first fixed electrode portion 11 via a distance ⁇ 1 when stationary.
  • the movable counter electrode 20a on the X1 side is also opposed to the side on the Y2 side of the counter electrode 11b of the first fixed electrode portion 11 via a distance ⁇ 1 when stationary.
  • the weight portion 20 is integrally formed with a plurality of movable counter electrodes 20c extending in parallel to the X2 direction from the edge portion on the X1 side on the Y2 side from the center O, and in the X1 direction from the edge portion on the X2 side.
  • a plurality of movable counter electrodes 20d extending in parallel are integrally formed.
  • the movable counter electrode 20d is opposed to the side on the Y1 side of the counter electrode 13c of the second fixed electrode portion 13 via a distance ⁇ 2 at rest. This is the same between the movable counter electrode 20c on the X1 side and the counter electrode 13b.
  • the opposing distances ⁇ 1 and ⁇ 2 at rest are designed to have the same dimensions.
  • the support conduction portion 17 that is continuous with the first support arm portion 16 and the surface 1 a of the support substrate 1 are fixed via the oxide insulating layer 3 b, and the second support arm portion 18 is attached to the second support arm portion 18.
  • the continuous support conduction part 19 and the surface 1a of the support substrate 1 are also fixed via the oxide insulating layer 3b.
  • the movable electrode portion 15 only the support conduction portion 17 and the support conduction portion 19 are fixed to the support substrate 1 by the oxide insulating layer 3b, and other portions, that is, the first support arm portion 16 and the second support portion.
  • the arm portion 18, the weight portion 20, the movable counter electrodes 20a, 20b, 20c, and 20d and the elastic support portions 21, 22, 23, and 24 have the oxide insulating layer between the surface 1a of the support substrate 1 removed, A gap having an interval corresponding to the thickness dimension of the oxide insulating layer 3 b is formed between these portions and the surface 1 a of the support substrate 1.
  • the elastic support portions 21, 22, 23, and 24 are formed to be meander patterns with thin leaf spring portions. As the elastic support portions 21, 22, 23, and 24 are deformed, the weight portion 20 is movable in the Y1 direction or the Y2 direction.
  • the frame body 25 is formed by cutting the SOI layer 10 into a square frame shape.
  • An oxide insulating layer 3 c is left between the frame 25 and the surface 1 a of the support substrate 1.
  • the oxide insulating layer 3 c is provided so as to surround the entire outer periphery of the movable region of the movable electrode portion 15.
  • the manufacturing method of the SOI layer 10 having the shape shown in FIGS. 1 and 4 includes a first fixed electrode portion 11, a second fixed electrode portion 13, a movable electrode portion 15 and a frame on the surface of the SOI layer 10 before processing. 25, and a portion of the SOI layer exposed from the resist layer is removed by ion etching means such as deep RIE using high-density plasma, and the first fixed electrode portion 11 and the second The fixed electrode part 13, the movable electrode part 15, and the frame 25 are separated from each other.
  • FIG. 3 illustrate a minute hole 11d formed in the counter electrode 11c, a minute hole 13d formed in the counter electrode 13c, and a minute hole 20e formed in the weight portion 20.
  • a selective isotropic etching process that can dissolve the oxide insulating layer (SiO 2 layer) without dissolving silicon is performed. At this time, the etching solution penetrates into the groove where the respective parts of the SOI layer 10 are separated, and further penetrates into the fine hole, thereby removing the oxide insulating layer.
  • the oxide insulating layers 3a, 3b, 3c are left only between the support conductive portions 12, 14, 17, 19, and the frame body 25 and the surface 1a of the support substrate 1, and the insulating layers are formed in other portions. Removed.
  • the support substrate 1 has a thickness dimension of about 0.2 to 0.7 mm
  • the SOI layer 10 has a thickness dimension of about 10 to 30 ⁇ m
  • the oxide insulating layers 3a, 3b, and 3c have a thickness of about 1 to 3 ⁇ m. is there.
  • the silicon substrate 5 constituting the wiring substrate 2 is formed with a thickness dimension of about 0.2 to 0.7 mm.
  • An insulating layer 30 is formed on the surface 5 a of the silicon substrate 5.
  • the insulating layer 30 is an inorganic insulating layer such as SiO 2 , SiN or Al 2 O 3 and is formed by a sputtering process or a CVD process.
  • As the inorganic insulating layer a material is selected whose difference in thermal expansion coefficient from the silicon substrate is smaller than the difference in thermal expansion coefficient between the conductive metal constituting the connection metal layer and the silicon substrate.
  • SiO 2 or SiN having a relatively small difference in thermal expansion coefficient from the silicon substrate is used.
  • a second connection metal layer 31 facing the support conduction portion 12 of the first fixed electrode portion 11 is formed on the surface of the insulating layer 30, and the second fixed electrode portion 13 is similarly formed.
  • a second connection metal layer 31 (not shown) facing the support conduction portion 14 is formed.
  • a second connection metal layer 32 that faces one support conduction portion 17 of the movable electrode portion 15 is formed on the surface of the insulating layer 30, and similarly, a second connection that faces the other support conduction portion 19.
  • a metal layer 32 (not shown) is also formed.
  • a second seal connection metal layer 33 is formed on the surface of the insulating layer 30 so as to face the surface of the frame 25.
  • the second seal connection metal layer 33 is formed of the same conductive metal material as the second connection metal layers 31 and 32.
  • the second seal connection metal layer 33 is formed in a quadrangular shape so as to face the frame body 25, and is formed so as to surround the entire periphery of the movable region at the outer periphery of the movable region of the movable electrode portion 15.
  • the second connection metal layers 31 and 32 and the second seal connection metal layer 33 are made of aluminum (Al).
  • a lead layer 34 that conducts to one second connection metal layer 31 and a lead layer 35 that conducts to the other second connection metal layer 32 are provided.
  • the lead layers 34 and 35 are made of aluminum.
  • the plurality of lead layers 34 and 35 are individually connected to the second connection metal layers 31 and 32, respectively.
  • Each of the lead layers 34 and 35 passes through the inside of the insulating layer 30 and traverses the portion where the second seal connection metal layer 33 is formed without contacting the second seal connection metal layer 33. Then, it extends to the outside of the region surrounded by the second seal connection metal layer 33.
  • the wiring board 2 is provided with connection pads 36 that are electrically connected to the lead layers 34 and 35 outside the region.
  • the connection pad 36 is made of aluminum, gold, or the like, which is a conductive material that is low resistance and hardly oxidizes.
  • the surface on which the second connection metal layers 31 and 32 are formed and the surface on which the second seal connection metal layer 33 is formed are located on the same plane.
  • a recess 38 is formed in the insulating layer 30 toward the surface 5a of the silicon substrate 5 in a region where the second connection metal layers 31 and 32 and the second seal connection metal layer 33 are not formed.
  • the concave portion 38 is formed in all portions of the insulating layer 30 other than the surface facing the support conducting portions 12, 14, 17, 19 and the frame body 25. Further, the recess 38 is formed to a depth halfway inside the insulating layer 30 so that the lead layers 34 and 35 are not exposed.
  • the first connection metal layer 41 facing the second connection metal layer 31 is formed on the surfaces of the support conductive portions 12 and 14 of the SOI layer 10.
  • a first connection metal layer 42 facing each second connection metal layer 32 is formed on the surface 19 by a sputtering process.
  • a first seal connection metal layer 43 facing the second seal connection metal layer 33 is formed on the surface of the frame 25.
  • the first seal connection metal layer 43 is simultaneously formed of the same metal material as the first connection metal layers 41 and 42.
  • first connection metal layers 41 and 42 and the first seal connection metal layer 43 are eutectic bonded or diffused with the aluminum forming the second connection metal layers 31 and 32 and the second seal connection metal layer 33.
  • It is made of germanium, which is a metal material that is easy to join.
  • the second connection metal layer 31 and the first connection metal layer 41 face each other
  • the second connection metal layer 32 and the first connection metal layer 42 face each other
  • the second connection metal layer 41 and the second connection metal layer 42 face each other.
  • the seal connection metal layer 33 and the first seal connection metal layer 43 face each other.
  • a metal bonding layer 51 is formed in which the second connection metal layer 31 and the first connection metal layer 41 are bonded, and the second connection metal layer 32 and the first connection metal layer 42 are bonded.
  • a metal bonding layer 52 is formed.
  • the second seal connection metal layer 33 and the first seal connection metal layer 43 are joined.
  • the frame body 25 and the insulating layer 30 are firmly fixed, and a metal seal layer (metal bonding layer) 45 surrounding the entire periphery of the movable region of the movable electrode portion 15 is formed.
  • a groove (metal outflow prevention portion) 53 is formed on the surface of the support conduction portion 12 and around the metal bonding layer 51. As shown in FIG. 6, the groove 53 is formed so as to continuously surround the entire circumference of the metal bonding layer 51.
  • the movable regions of the support conductive portions 12, 14, 17, 19 and the movable electrode portion 15 are formed in a region surrounded by the frame body 25.
  • the support conduction parts 12, 14, 17, 19 are collected at a substantially central position of the area surrounded by the frame body 25, and the movable area of the movable electrode part 15 is connected to the support conduction parts 12, 14, 17, 19 and the frame body. It is formed in a region between 25. Therefore, as shown in FIG. 1, the movable region approaches the periphery of each of the support conductive portions 12, 14, 17, and 19.
  • the groove 53 it is preferable to form the groove 53 so as to continuously surround the entire circumference of the metal bonding layer 51 because it can prevent the molten metal from flowing out to the movable region more effectively.
  • the groove 53 may be partially discontinuous around the metal bonding layer 51.
  • the outer peripheral shape of the groove 53 is preferably similar to the outer peripheral shape of the metal bonding layer 51 or the outer peripheral shape of the first connection metal layer 41 or the second connection metal layer 31 before bonding.
  • a part of the metal bonding layer 54 formed by bonding the second connection metal layer 31 and the first connection metal layer 41 is formed inside the groove (metal outflow prevention portion) 55. Is formed. Also in the form of FIG. 7, similarly to FIG. 6, the molten metal is blocked by the groove 55 and appropriately flows out to the movable region of the weight part 20 of the movable electrode part 15 and the electrode facing part shown in FIGS. 2 and 3. Can be prevented.
  • a concave portion 56 is formed in the surface 12 a of the support conducting portion 12, and a wall (metal outflow prevention portion) 57 surrounding the concave portion 56 is formed.
  • a metal bonding layer 58 formed by bonding the second connection metal layer 31 and the first connection metal layer 41 is formed in the recess 56.
  • the molten metal is blocked by the wall 57, and can appropriately be prevented from flowing out to the movable region of the weight portion 20 of the movable electrode portion 15 and the electrode facing portion shown in FIGS. 2 and 3.
  • a groove 59 for preventing metal outflow is formed not only on the support conducting portion 12 side but also on the wiring board 2 side.
  • the molten metal can be dammed up in either the groove 53 or the groove 59 regardless of which substrate is placed on the lower side. It is possible to prevent the flow from flowing to the movable region of the 15 weight portions 20 and the electrode facing portions shown in FIGS.
  • a groove 59 is formed on the surface of the insulating layer 30 formed on the surface of the wiring board 2. Any of the grooves for preventing metal outflow can be formed by using an existing method such as etching.
  • the recess 56 can be formed by etching on the surface 12 a of the support conductive portion 12, but the wall 57 can also be formed by sputtering or coating on the surface 12 a of the flat support conductive portion 12.
  • the metal outflow prevention part can be formed only on the side of the wiring board 2 facing each supporting conduction part.
  • the metal outflow prevention part may have a shape other than the groove and the wall.
  • a recess 31a is formed in the substantially central portion of the second connection metal layer 31, but the recess 31a is not formed, and the surface of the second connection metal layer 31 is the first connection metal.
  • the layer 41 it may be formed in a plane.
  • the concave portion 31a becomes an unbonded region, it is possible to increase the bonding area by forming the concave portion 31a as small as possible, or by allowing the concave portion 31a to be bonded completely on a flat surface. It is preferable that the connection metal layers 31 can be firmly bonded.
  • the support conductive portion 12 has been described. However, the same groove or wall metal outflow prevention portion is formed for the other support conductive portions 14, 17, and 19.
  • the groove (metal outflow prevention portion) 60 is also formed on the surface of the frame (joint portion) 25. As shown in FIGS. 4 and 10, the groove 60 is formed on the inner frame surface on the movable region side of the metal seal layer (metal bonding layer) 45. Thereby, even if the molten metal flows inward in the movable region direction, it can be blocked by the groove 60 and flows out to the movable region of the weight portion 20 of the movable electrode portion 15 and the electrode facing portion shown in FIGS. Can be prevented. In addition, if a groove
  • the metal outflow prevention portion is provided only in the support conduction portions 12, 14, 17, and 19. What is necessary is just to form. Further, the movable region is formed at a position far from the support conductive portions 12, 14, 17, and 19, and the molten metal from the metal bonding layer formed between the support conductive portions 12, 14, 17, and 19 and the wiring board 2 is very small. When it does not become a problem, the form which forms a metal outflow prevention part only in the surface of a frame or the surface of other joining layers may be sufficient.
  • the surface of all the joints in this embodiment, the support conductive parts 12, 14, 17, 19 and the frame body 25
  • the wiring board 2 facing the joints. It is desirable to form a metal outflow prevention portion on the surface of the metal or on both surfaces.
  • the above-described MEMS sensor has a structure in which an SOI substrate and a wiring substrate 2 are stacked, and is thin as a whole.
  • the support conductive portions 12, 14, 17 and 19 are joined to the wiring board 2 by eutectic bonding or diffusion bonding of the second connection metal layers 31 and 32 and the first connection metal layers 41 and 42. It is preferable.
  • This bonding layer is thin and has a small area, and the support conductive portions 12, 14, 17, 19 and the support substrate 1 are bonded to each other through oxide insulating layers 3a and 3b made of an inorganic insulating material. Therefore, even if the ambient temperature becomes high, the thermal stress of the bonding layer hardly affects the support structure of the support conductive portions 12, 14, 17, and 19, and the fixed electrode portions 11 and 13 and the movable electrode portion 15 due to the thermal stress. It is hard to generate distortion.
  • the metal seal layer 45 surrounding the movable region of the movable electrode portion 15 is preferably a bonding layer formed thinly between the frame 25 and the insulating layer 30. Since the frame 25 has a sufficient thickness dimension, the support substrate 1 and the silicon substrate 5 made of silicon are less likely to be distorted due to the thermal stress of the metal seal layer 45.
  • the overall thickness of the MEMS sensor is almost determined by the thickness of the support substrate 1 and the silicon substrate 5, the thickness of the SOI layer 10, and the thickness of the insulating layer 30. Since the thickness dimension of each layer can be managed with high accuracy, variations in thickness are less likely to occur.
  • the insulating layer 30 is formed with a recess 38 that faces the movable region of the movable electrode portion 15, even if the whole is thin, the movable electrode portion 15 has a movement margin (margin) in the thickness direction. Even if a large acceleration in the thickness direction acts from the outside, the weight portion 20 and the movable counter electrodes 20a, 20b, 20c, and 20d are unlikely to hit the insulating layer 30, and malfunctions are unlikely to occur.
  • the wiring board 2 includes the silicon substrate 5, and the insulating layer 30, the lead layers 34 and 35, and the second connection metal layer 31 on the surface 5 a of the silicon substrate 5. Is done. Therefore, it is possible to reduce the thickness with a simple structure as compared with a mode in which a conduction path with the support conduction portion is ensured by using a through wiring penetrating the silicon substrate as shown in FIG.
  • This MEMS sensor can be used as an acceleration sensor that detects acceleration in the Y1 direction or the Y2 direction.
  • acceleration in the Y1 direction acts on the MEMS sensor
  • the weight portion 20 of the movable electrode portion 15 moves in the Y2 direction due to the reaction.
  • the facing distance ⁇ 1 between the movable counter electrode 20b and the fixed counter electrode 11c shown in FIG. 2 increases, and the capacitance between the movable counter electrode 20b and the counter electrode 11c decreases.
  • the facing distance ⁇ 2 between the movable counter electrode 20d and the counter electrode 13c shown in FIG. 3 becomes narrow, and the capacitance between the movable counter electrode 20b and the counter electrode 13c increases.
  • a change in acceleration acting in the Y1 direction is detected by detecting a decrease and an increase in capacitance with an electric circuit and obtaining a difference between an output change due to an increase in the facing distance ⁇ 1 and an output change due to a decrease in the facing distance ⁇ 2. And the magnitude of acceleration can be detected.
  • the weight portion 20 of the movable electrode portion 15 moves in the thickness direction in response to the acceleration in the direction orthogonal to the XY plane, and the counter electrodes 11b, 11c, 13b, 13c and the movable counter electrode 20a, 20b, 20c in the movable electrode portion 15 are opposed to each other in the thickness direction of the movable electrode portion 15 to change the facing area. It is also possible to detect a change in capacitance between the electrode and the counter electrode.
  • the second connection metal layers 31 and 32 and the second seal connection metal layer 33 are aluminum, and the first connection metal layers 41 and 42 and the first seal connection metal layer 43 are germanium.
  • combinations of metals capable of eutectic bonding or diffusion bonding include aluminum-zinc, gold-silicon, gold-indium, gold-germanium, and gold-tin. By combining these metals, it becomes possible to perform bonding at a relatively low temperature of 450 ° C. or lower, which is a temperature lower than the melting point of each metal.
  • FIG. 11 is a cross-sectional view showing a MEMS sensor according to still another embodiment.
  • an IC package 100 is used instead of the silicon substrate 5.
  • the IC package 100 includes a detection circuit that detects a change in capacitance between the counter electrode and the movable counter electrode.
  • the insulating layer 30 is formed on the upper surface 101 of the IC package 100, and the second connecting metal layers 31 and 32 and the second seal connecting metal layer 33 are formed on the surface of the insulating layer 30.
  • the second connection metal layers 31 and 32 are electrically connected to electrode pads or the like appearing on the upper surface 101 of the IC package 100 via connection layers 134 and 135 such as through holes penetrating the insulating layer 30. It is connected to the electrical circuit inside.
  • a groove 61 which is a metal outflow prevention portion, is formed on the surface of the insulating layer 30 facing the joint portion (support conduction portions 12, 14, 17, 19 and frame 25). Therefore, it is possible to appropriately prevent the molten metal from being blocked by the groove 61 and flowing out to the movable region.
  • FIG. 12 is a cross-sectional view showing a MEMS sensor according to still another embodiment.
  • a through wiring layer 28 that is also formed of silicon and penetrates the silicon substrate 27 constituting the wiring substrate 26 is provided.
  • the through wiring layer 28 and the silicon substrate 27 are insulated by an insulating layer 29.
  • second connection metal layers 31 and 32 are formed on the surface 27 a of the silicon substrate 27 that is in contact with the through wiring layer 28 and faces the SOI layer 10.
  • the insulating layer 29 covers the surface 27b opposite to the surface facing the SOI layer 10 of the silicon substrate 27.
  • a lead layer 37 in contact with the through wiring layer 28 is formed inside the insulating layer 29. Has been.
  • a groove 62 as a metal outflow prevention portion is formed on each surface of the joint portion (support conduction portions 12, 14, 17, 19 and frame body 25). Therefore, it is possible to appropriately prevent the molten metal from being blocked by the groove 62 and flowing out to the movable region.
  • the metal outflow prevention part is a groove
  • the groove surrounds the metal bonding layer on the surface of the support conductive part in the present embodiment. If it is provided at a position where the outflow of the molten metal to the movable region can be suppressed, the groove can be estimated as the metal outflow prevention portion in the present embodiment.
  • the part formed by the groove or the wall is not formed for the purpose of the metal outflow prevention part, if the part is a secondary effect to suppress the metal outflow of the metal bonding layer
  • the part is a metal outflow prevention part in this embodiment.
  • FIG. 2 is an enlarged plan view of the portion indicated by the arrow II in FIG.
  • FIG. 1 is an enlarged plan view of a portion indicated by an arrow III in FIG.
  • FIG. 4 is a cross-sectional view showing a stacked structure of the MEMS sensor, which corresponds to a cross-sectional view taken along line IV-IV in FIG.
  • the partial expanded sectional view which expanded and showed a part of FIG.
  • FIG. 1 is a plan view similar to FIG. 1 for explaining a groove (metal outflow prevention portion) formed in the frame; Sectional drawing which shows embodiment using IC package instead of a 2nd board

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention porte sur un capteur de système micro-électromécanique (MEMS) dans lequel il est possible d’empêcher de façon correcte un métal fondu de s'écouler hors d'une zone mobile. Une première couche métallique de connexion (41) est formée sur la surface d'une partie de conduction de support (12), et une seconde couche métallique de connexion (31) est formée sur la surface d'un substrat de câblage (2) qui fait face à la partie de conduction de support (12). La première couche métallique de connexion (41) et la seconde couche métallique de connexion (31) sont reliées pour former une couche de joint métallique (51). Une rainure (partie empêchant l'écoulement de métal) (53) est formée de façon à entourer la couche de joint métallique (51) sur la surface de la partie de conduction de support. Ainsi, même si le métal fondu s'écoule lorsque la première couche métallique de connexion (41) et la seconde couche métallique de connexion (31) sont reliées en étant chauffées sous pression, le métal fondu est retenu par la rainure (53) et correctement empêché de s'écouler hors d'une zone mobile.
PCT/JP2009/066356 2008-09-22 2009-09-18 Capteur de système micro-électromécanique WO2010032822A1 (fr)

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JP2008242369 2008-09-22
JP2008-242369 2008-09-22

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012040677A (ja) * 2010-07-23 2012-03-01 Alps Electric Co Ltd Ｍｅｍｓセンサ
WO2023100576A1 (fr) * 2021-11-30 2023-06-08 ローム株式会社 Capteur mems et procédé de fabrication de capteur mems

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167820A (ja) * 1997-08-08 1999-03-09 Denso Corp 半導体装置及びその製造方法
JP2005514221A (ja) * 2001-12-28 2005-05-19 コミサリヤ・ア・レネルジ・アトミク ２つの微細構造基板間をシールするための方法およびゾーン
JP2006525133A (ja) * 2003-05-02 2006-11-09 エル−３ コミュニケーションズ コーポレーション 集積回路要素の真空パッケージ製造
WO2007078472A1 (fr) * 2005-12-16 2007-07-12 Innovative Micro Technology Liaison hermétique au niveau plaquette faisant intervenir un alliage métallique et une zone élevée
US7276789B1 (en) * 1999-10-12 2007-10-02 Microassembly Technologies, Inc. Microelectromechanical systems using thermocompression bonding
US20080067652A1 (en) * 2006-09-18 2008-03-20 Simpler Networks Inc. Integrated mems packaging

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167820A (ja) * 1997-08-08 1999-03-09 Denso Corp 半導体装置及びその製造方法
US7276789B1 (en) * 1999-10-12 2007-10-02 Microassembly Technologies, Inc. Microelectromechanical systems using thermocompression bonding
JP2005514221A (ja) * 2001-12-28 2005-05-19 コミサリヤ・ア・レネルジ・アトミク ２つの微細構造基板間をシールするための方法およびゾーン
JP2006525133A (ja) * 2003-05-02 2006-11-09 エル−３ コミュニケーションズ コーポレーション 集積回路要素の真空パッケージ製造
WO2007078472A1 (fr) * 2005-12-16 2007-07-12 Innovative Micro Technology Liaison hermétique au niveau plaquette faisant intervenir un alliage métallique et une zone élevée
US20080067652A1 (en) * 2006-09-18 2008-03-20 Simpler Networks Inc. Integrated mems packaging

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012040677A (ja) * 2010-07-23 2012-03-01 Alps Electric Co Ltd Ｍｅｍｓセンサ
WO2023100576A1 (fr) * 2021-11-30 2023-06-08 ローム株式会社 Capteur mems et procédé de fabrication de capteur mems

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