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WO2009154889A2 - Gas distribution showerhead skirt - Google Patents

Gas distribution showerhead skirt Download PDF

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Publication number
WO2009154889A2
WO2009154889A2 PCT/US2009/043189 US2009043189W WO2009154889A2 WO 2009154889 A2 WO2009154889 A2 WO 2009154889A2 US 2009043189 W US2009043189 W US 2009043189W WO 2009154889 A2 WO2009154889 A2 WO 2009154889A2
Authority
WO
WIPO (PCT)
Prior art keywords
gas distribution
distribution showerhead
showerhead
coupled
auxiliary electrodes
Prior art date
Application number
PCT/US2009/043189
Other languages
French (fr)
Other versions
WO2009154889A3 (en
Inventor
Tom K. Cho
Brian Sy-Yuan Shieh
Zheng Yuan
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN2009801205580A priority Critical patent/CN102047388A/en
Publication of WO2009154889A2 publication Critical patent/WO2009154889A2/en
Publication of WO2009154889A3 publication Critical patent/WO2009154889A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Definitions

  • Embodiments of the present invention generally relate to an extension from a gas distribution showerhead or auxiliary electrode.
  • PECVD plasma enhanced chemical vapor deposition
  • the processing gas may be introduced into the processing chamber through a gas distribution showerhead.
  • the gas distribution showerhead may be electrically biased to ignite the processing gas into a plasma.
  • the gas distribution showerhead may be beneficial in not only dispersing the gas, but also in igniting the plasma.
  • the present invention generally includes an extension or skirt that extends from a gas distribution showerhead in a processing chamber.
  • the gas distribution showerhead may be electrically biased.
  • the electrically biased showerhead may, in some cases, ignite the processing gas into a plasma state.
  • the walls of the processing chamber and the susceptor may be grounded relative to the showerhead.
  • the edges of the substrate may have a greater surface area of ground contacts as compared to the electrically biased showerhead. Due to the increase in grounding near the edges, the material deposited on the substrate may have different properties as compared to the middle of the substrate. By extending the showerhead edges down closer toward the substrate, substantially uniform properties of the material may be obtained.
  • an apparatus in one embodiment, includes a processing chamber body and a gas distribution showerhead disposed in the processing chamber body.
  • the showerhead may be coupled to a power source.
  • the apparatus may also comprise an auxiliary electrode disposed inside the processing chamber body and coupled to a second power source.
  • the apparatus may also comprise a susceptor disposed in the processing chamber body and spaced apart from the auxiliary electrode and the gas distribution showerhead.
  • a gas distribution showerhead in another embodiment, includes a gas distribution showerhead body having an upstream side and a downstream side with one or more gas passages extending between the upstream side and the downstream side.
  • the showerhead may also include one or more auxiliary electrodes coupled to and extending from the gas distribution showerhead body from the downstream side.
  • a plasma enhanced chemical vapor deposition apparatus in another embodiment, includes a processing chamber body, a susceptor disposed in the processing chamber body, and a gas distribution showerhead disposed in the processing chamber body and separated from the susceptor.
  • the gas distribution showerhead may have a downstream surface facing the susceptor and an upstream surface opposite to the downstream surface.
  • the apparatus may also include one or more auxiliary electrodes disposed in the processing chamber body and between the gas distribution showerhead and the susceptor. The one or more auxiliary electrodes may be coupled to a power source.
  • Figure 1A is a schematic cross sectional view of a processing apparatus 100 according to one embodiment of the invention.
  • Figure 1 B is a schematic cross sectional view of the processing apparatus 100 of Figure 1A with the substrate 106 in the processing position.
  • Figure 2A is a schematic cross sectional view of a processing apparatus 200 according to another embodiment of the invention.
  • Figure 2B is a schematic cross sectional view of the processing apparatus 200 of Figure 2A with the substrate in the processing position.
  • Figure 3 is a schematic isometric view of a gas distribution showerhead 302 and skirt 304 according to one embodiment of the invention.
  • Figure 4 is a schematic isometric view of a gas distribution showerhead 402 and skirt 404 according to another embodiment of the invention.
  • the present invention generally includes an extension or skirt that extends from a gas distribution showerhead in a processing chamber.
  • the gas distribution showerhead may be electrically biased.
  • the electrically biased showerhead may, in some cases, ignite the processing gas into a plasma state.
  • the walls of the processing chamber and the susceptor may be grounded relative to the showerhead.
  • the edges of the substrate may have a greater surface area of ground contacts as compared to the electrically biased showerhead. Due to the increase in grounding near the edges, the material deposited on the substrate may have different properties as compared to the middle of the substrate. By extending the showerhead edges down closer toward the substrate, substantially uniform properties of the material may be obtained.
  • the invention may be practiced in a PECVD system available from AKT America, a subsidiary of Applied Materials, Inc., Santa Clara, CA. It is contemplated that the invention may be practiced in other plasma processing chambers, including those from other manufacturers.
  • FIG. 1A is a schematic cross sectional view of a processing apparatus 100 according to one embodiment of the invention.
  • the processing apparatus 100 may comprise a chamber body 102 enclosing a susceptor 104 that supports a substrate 106 during processing.
  • the apparatus 100 may be evacuated by a vacuum pump 108.
  • the substrate 106 may enter and exit the chamber body 102 through a slit valve opening 110.
  • Processing gas may be delivered to the apparatus 100 from a gas source 114.
  • the gas source 14 may provide the processing gas as well as the cleaning gas.
  • the processing gas travels through a remote plasma source 116 in a gas tube 120 to the apparatus 100.
  • the gas is introduced to the apparatus 100 through the backing plate 112.
  • cleaning gas may be delivered to the remote plasma source 116 from the gas source 114 and ignited into a plasma. Once ignited, the plasma may be delivered to the apparatus 100.
  • a power source 118 may also be coupled to the apparatus 100.
  • the power source 118 may comprise an RF power source that delivers RF current.
  • the power source 118 may deliver power to the gas distribution showerhead 124 that is disposed in the apparatus 100. It is to be understood that the RF return path for the RF current is encompassed by the general term 'grounding' that is used in the present application.
  • the gas distribution showerhead 124 may have one or more gas passages 126 therethrough to permit the processing gas and/or radicals from a remotely generated plasma to pass into the processing area 132.
  • the processing gas enters the apparatus 100 through the backing plate 112, the gas enters a plenum 122 between the backing plate 112 and the showerhead 124.
  • the susceptor 104 may be grounded as may the chamber body 102.
  • the substrate 106 is an insulating substrate such as glass, a large portion of the susceptor 104 is covered, but the edges of the susceptor 104 may be uncovered and hence, provide a path to ground during processing. Additionally, because the chamber body 102 is grounded, the chamber body 102 also provides a path to ground.
  • the chamber body 102 surrounds the processing area 132. Thus, the areas of the substrate 106 that are closest to the edge of the susceptor 104 and the chamber body 102 are closer to ground than the areas of the substrate 106 that are closer to the center. Because the substrate 106 at its edges and corners may be closer to ground, the substrate 106 may not be coated uniformly.
  • the substrate 106 may have material deposited that has a different thickness near the edges and corners of the substrate 106 as compared to the middle. Also, the substrate 106 may have material deposited that has different film properties, such as crystalline structure, near the edges and corners of the substrate 106 as compared the middle. The non-uniformity may be caused by an uneven plasma distribution in the apparatus 100.
  • the showerhead 124 may have an extension or skirt 130 coupled thereto.
  • the skirt 130 may comprise a metallic material.
  • the skirt 130 may comprise stainless steel.
  • the skirt 130 may extend from the showerhead 124 towards the susceptor 104 along the outside edge of the showerhead 124.
  • the skirt 130 may be an integral, unitary piece of material with the showerhead 124.
  • the skirt 130 may comprise a separate piece that is coupled to the showerhead 124.
  • the skirt 130 may be disposed along at least a portion of the outer periphery of the showerhead 124 and not interfere or block any gas passing through the gas passages 126. Because the skirt 130 is coupled to the showerhead 124, the skirt 130 is thus electrically biased.
  • the skirt 130 provides an electrode surface near the outer periphery of the substrate 106 during processing.
  • the presence of the electrically biased skirt 130 may permit uniform deposition on the substrate 106 including film properties and thickness.
  • a grounded insulator 128 may be coupled to the chamber body 102 behind the skirt 130.
  • the skirt 130 may be spaced from the susceptor 104 by a distance represented by arrow "A". During processing, the skirt 130 may be spaced from the susceptor 104 by a distance shown by arrows "B" in Figure 1 B.
  • the skirt 130 provides an additional electrode surface in the chamber body 102.
  • the susceptor 104 and chamber walls, which are grounded as anodes, have a surface area.
  • the skirt 130 by extending down from the showerhead 124, blocks one or more portions of the wall that the plasma sees during processing and thus, decreases the surface area of the anode that the plasma sees or exposed to during processing. Therefore, the electrically biased skirt 130 interacts with the grounded susceptor 104 by decreasing the anode surface area and reducing the available paths to ground.
  • the presence of the skirt 130 and the shape of the skirt 130 and its interaction with the susceptor 104 affects the plasma and thus, the deposition on the substrate 106.
  • the grounded anode may pull the plasma closer to the anode and thus, further away from the center of the substrate 106.
  • the skirt 130 which is electrically biased, may decrease the anode surface area that the plasma sees and tend to pull less of the plasma away from the center. Therefore, the shape and locations of the skirt 130 may be tailored to shape the plasma to permit an even distribution of plasma in the apparatus 100 and thus, uniform properties of the material deposited onto the substrate 106.
  • skirt 130 increases the surface area of the electrically biased electrode within the apparatus 100.
  • the surface area of the electrode is increased relative to the grounded surface area.
  • the ratio of the electrode surface area near the edge of the substrate relative to the grounded surface area near the edge of the substrate 106 is increased.
  • the material deposited on the substrate 106 may be uniform in properties and thickness.
  • the skirt 130 may extend from selected portions of the showerhead 124 in one embodiment.
  • the skirt 130 may extend from the corners of the showerhead 124 and the middle of the sides such as shown in Figures 1A and 1B.
  • the skirt 130 may extend from the periphery of the showerhead 124 for the entire periphery of the showerhead 124.
  • FIG. 2A is a schematic cross sectional view of a processing apparatus 200 according to another embodiment of the invention.
  • the skirt 204 may be spaced from the showerhead 202. Because the skirt 204 is spaced from the showerhead 202, the showerhead 202 may be coupled to a first power source 206 and the skirt 204 may be coupled to a second power source 208. In one embodiment, the same power source may be coupled separately to both the skirt 204 and the showerhead 202.
  • the power sources 206, 208 may comprise RF power sources that deliver RF current to the showerhead 202 and skirt 204 respectively.
  • the skirt 204 because it is spaced from the showerhead 202, functions as an auxiliary electrode.
  • the skirt 204 is electrically biased just as the showerhead 202 is biased. In one embodiment, the skirt 204 may be electrically biased at the same potential as the showerhead 202. In another embodiment, the showerhead 202 and the skirt 204 may be electrically biased at different electrical potentials.
  • the skirt 204 may be spaced from the susceptor by a distance represented by arrow "C". During processing, the skirt 204 may be spaced from the susceptor by a distance shown by arrows "D" in Figure 2B.
  • the skirt 204 provides an additional electrode surface in the chamber body.
  • the susceptor and chamber walls which are grounded as anodes, have a surface area.
  • the skirt 204 by extending down from the showerhead 202, blocks one or more portions of the wall that the plasma sees during processing and thus, decreases the surface area of the anode that the plasma sees or exposed to during processing. Therefore, the electrically biased skirt 204 interacts with the grounded susceptor by decreasing the anode surface area and reducing the available paths to ground.
  • the presence of the skirt 204 and the shape of the skirt 204 and its interaction with the susceptor affects the plasma and thus, the deposition on the substrate.
  • the grounded anode may pull the plasma closer to the anode and thus, further away from the center of the substrate.
  • the skirt 204 which is electrically biased, may decrease the anode surface area that the plasma sees and tend to pull less of the plasma away from the center. Therefore, the shape and locations of the skirt 204 may be tailored to shape the plasma to permit an even distribution of plasma in the apparatus 200 and thus, uniform properties of the material deposited onto the substrate.
  • Figure 3 is a schematic isometric view of a gas distribution showerhead 302 and skirt 304 according to one embodiment of the invention.
  • the showerhead 302 has a plurality of gas passages 306 therethrough.
  • the skirt 304 may be disposed along the periphery of the showerhead 302.
  • the skirt 304 may extend from the periphery of the showerhead 302.
  • the skirt 304 may be discontinuous around the periphery of the showerhead 302.
  • Figure 4 is a schematic isometric view of a gas distribution showerhead 402 and a skirt 404 according to another embodiment of the invention.
  • the skirt 404 may have a structure that is substantially continuous around the periphery of the showerhead 402.
  • the skirt 404 extends down from the showerhead 402 by the same distance for the entire periphery of the showerhead 404.
  • the skirt 404 extends from the showerhead 402 by a varying distance for the entire periphery of the showerhead 402.
  • the shape of the skirt may be customizable and should not be limited to the shapes shown herein.
  • the shape of the skirt and the distance that it extends below the showerhead may be customized to achieve the desired plasma distribution in the processing chamber and hence, the desired film properties.
  • the electrode surface area is increased relative to the grounding surface area.
  • the plasma may be spread evenly through the processing chamber and the film thickness and properties may be substantially uniform.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention generally includes an extension or skirt that extends from a gas distribution showerhead in a processing chamber. When processing substrates, the gas distribution showerhead may be electrically biased. The electrically biased showerhead may, in some cases, ignite the processing gas into a plasma state. The walls of the processing chamber and the susceptor, may be grounded relative to the showerhead. Thus, the edges of the substrate may have a greater surface area of ground contacts as compared to the electrically biased showerhead. Due to the increase in grounding near the edges, the material deposited on the substrate may have different properties as compared to the middle of the substrate. By extending the showerhead edges down closer toward the substrate, substantially uniform properties of the material may be obtained.

Description

GAS DISTRIBUTION SHOWERHEAD SKIRT
BACKGROUND OF THE INVENTION Field of the Invention
[0001] Embodiments of the present invention generally relate to an extension from a gas distribution showerhead or auxiliary electrode.
Description of the Related Art
[0002] As the demand for larger flat panel displays continues, so must the size of the processing chamber where some of the manufacturing steps will occur. Once method that is used in the manufacturing of flat panel displays is plasma enhanced chemical vapor deposition (PECVD). PECVD is a method whereby one or more precursor gases are introduced into a processing chamber and ignited into a plasma to deposit a layer onto a substrate. PECVD may be used to deposit layers onto various types of substrates including semiconductor wafers, flat panel display substrates, and solar panel substrates to name a few.
[0003] In PECVD, the processing gas may be introduced into the processing chamber through a gas distribution showerhead. The gas distribution showerhead may be electrically biased to ignite the processing gas into a plasma. Thus, the gas distribution showerhead may be beneficial in not only dispersing the gas, but also in igniting the plasma.
[0004] Therefore, there is a need in the art for a large area gas distribution showerhead for use in a PECVD chamber.
SUMMARY OF THE INVENTION
[0005] The present invention generally includes an extension or skirt that extends from a gas distribution showerhead in a processing chamber. When processing substrates, the gas distribution showerhead may be electrically biased. The electrically biased showerhead may, in some cases, ignite the processing gas into a plasma state. The walls of the processing chamber and the susceptor, may be grounded relative to the showerhead. Thus, the edges of the substrate may have a greater surface area of ground contacts as compared to the electrically biased showerhead. Due to the increase in grounding near the edges, the material deposited on the substrate may have different properties as compared to the middle of the substrate. By extending the showerhead edges down closer toward the substrate, substantially uniform properties of the material may be obtained.
[0006] In one embodiment, an apparatus includes a processing chamber body and a gas distribution showerhead disposed in the processing chamber body. The showerhead may be coupled to a power source. The apparatus may also comprise an auxiliary electrode disposed inside the processing chamber body and coupled to a second power source. The apparatus may also comprise a susceptor disposed in the processing chamber body and spaced apart from the auxiliary electrode and the gas distribution showerhead.
[0007] In another embodiment, a gas distribution showerhead includes a gas distribution showerhead body having an upstream side and a downstream side with one or more gas passages extending between the upstream side and the downstream side. The showerhead may also include one or more auxiliary electrodes coupled to and extending from the gas distribution showerhead body from the downstream side.
[0008] In another embodiment, a plasma enhanced chemical vapor deposition apparatus includes a processing chamber body, a susceptor disposed in the processing chamber body, and a gas distribution showerhead disposed in the processing chamber body and separated from the susceptor. The gas distribution showerhead may have a downstream surface facing the susceptor and an upstream surface opposite to the downstream surface. The apparatus may also include one or more auxiliary electrodes disposed in the processing chamber body and between the gas distribution showerhead and the susceptor. The one or more auxiliary electrodes may be coupled to a power source. BRIEF DESCRIPTION OF THE DRAWINGS
[0009] So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
[0010] Figure 1A is a schematic cross sectional view of a processing apparatus 100 according to one embodiment of the invention.
[0011] Figure 1 B is a schematic cross sectional view of the processing apparatus 100 of Figure 1A with the substrate 106 in the processing position.
[0012] Figure 2A is a schematic cross sectional view of a processing apparatus 200 according to another embodiment of the invention.
[0013] Figure 2B is a schematic cross sectional view of the processing apparatus 200 of Figure 2A with the substrate in the processing position.
[0014] Figure 3 is a schematic isometric view of a gas distribution showerhead 302 and skirt 304 according to one embodiment of the invention.
[0015] Figure 4 is a schematic isometric view of a gas distribution showerhead 402 and skirt 404 according to another embodiment of the invention.
[0016] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION
[0017] The present invention generally includes an extension or skirt that extends from a gas distribution showerhead in a processing chamber. When processing substrates, the gas distribution showerhead may be electrically biased. The electrically biased showerhead may, in some cases, ignite the processing gas into a plasma state. The walls of the processing chamber and the susceptor, may be grounded relative to the showerhead. Thus, the edges of the substrate may have a greater surface area of ground contacts as compared to the electrically biased showerhead. Due to the increase in grounding near the edges, the material deposited on the substrate may have different properties as compared to the middle of the substrate. By extending the showerhead edges down closer toward the substrate, substantially uniform properties of the material may be obtained.
[0018] The invention, as described below, may be practiced in a PECVD system available from AKT America, a subsidiary of Applied Materials, Inc., Santa Clara, CA. It is contemplated that the invention may be practiced in other plasma processing chambers, including those from other manufacturers.
[0019] Figure 1A is a schematic cross sectional view of a processing apparatus 100 according to one embodiment of the invention. The processing apparatus 100 may comprise a chamber body 102 enclosing a susceptor 104 that supports a substrate 106 during processing. The apparatus 100 may be evacuated by a vacuum pump 108. The substrate 106 may enter and exit the chamber body 102 through a slit valve opening 110.
[0020] Processing gas may be delivered to the apparatus 100 from a gas source 114. The gas source 14 may provide the processing gas as well as the cleaning gas. The processing gas travels through a remote plasma source 116 in a gas tube 120 to the apparatus 100. The gas is introduced to the apparatus 100 through the backing plate 112. When the apparatus 100 needs cleaned, cleaning gas may be delivered to the remote plasma source 116 from the gas source 114 and ignited into a plasma. Once ignited, the plasma may be delivered to the apparatus 100. [0021] A power source 118 may also be coupled to the apparatus 100. In one embodiment, the power source 118 may comprise an RF power source that delivers RF current. The power source 118 may deliver power to the gas distribution showerhead 124 that is disposed in the apparatus 100. It is to be understood that the RF return path for the RF current is encompassed by the general term 'grounding' that is used in the present application.
[0022] The gas distribution showerhead 124 may have one or more gas passages 126 therethrough to permit the processing gas and/or radicals from a remotely generated plasma to pass into the processing area 132. When the processing gas enters the apparatus 100 through the backing plate 112, the gas enters a plenum 122 between the backing plate 112 and the showerhead 124.
[0023] The susceptor 104 may be grounded as may the chamber body 102. When the substrate 106 is an insulating substrate such as glass, a large portion of the susceptor 104 is covered, but the edges of the susceptor 104 may be uncovered and hence, provide a path to ground during processing. Additionally, because the chamber body 102 is grounded, the chamber body 102 also provides a path to ground. The chamber body 102 surrounds the processing area 132. Thus, the areas of the substrate 106 that are closest to the edge of the susceptor 104 and the chamber body 102 are closer to ground than the areas of the substrate 106 that are closer to the center. Because the substrate 106 at its edges and corners may be closer to ground, the substrate 106 may not be coated uniformly. The substrate 106 may have material deposited that has a different thickness near the edges and corners of the substrate 106 as compared to the middle. Also, the substrate 106 may have material deposited that has different film properties, such as crystalline structure, near the edges and corners of the substrate 106 as compared the middle. The non-uniformity may be caused by an uneven plasma distribution in the apparatus 100.
[0024] To even the plasma distribution within the processing chamber, the showerhead 124 may have an extension or skirt 130 coupled thereto. In one embodiment, the skirt 130 may comprise a metallic material. In another embodiment, the skirt 130 may comprise stainless steel. The skirt 130 may extend from the showerhead 124 towards the susceptor 104 along the outside edge of the showerhead 124. The skirt 130 may be an integral, unitary piece of material with the showerhead 124. In one embodiment, the skirt 130 may comprise a separate piece that is coupled to the showerhead 124. The skirt 130 may be disposed along at least a portion of the outer periphery of the showerhead 124 and not interfere or block any gas passing through the gas passages 126. Because the skirt 130 is coupled to the showerhead 124, the skirt 130 is thus electrically biased. Therefore, the skirt 130 provides an electrode surface near the outer periphery of the substrate 106 during processing. The presence of the electrically biased skirt 130 may permit uniform deposition on the substrate 106 including film properties and thickness. A grounded insulator 128 may be coupled to the chamber body 102 behind the skirt 130.
[0025] The skirt 130 may be spaced from the susceptor 104 by a distance represented by arrow "A". During processing, the skirt 130 may be spaced from the susceptor 104 by a distance shown by arrows "B" in Figure 1 B. The skirt 130 provides an additional electrode surface in the chamber body 102. The susceptor 104 and chamber walls, which are grounded as anodes, have a surface area. The skirt 130, by extending down from the showerhead 124, blocks one or more portions of the wall that the plasma sees during processing and thus, decreases the surface area of the anode that the plasma sees or exposed to during processing. Therefore, the electrically biased skirt 130 interacts with the grounded susceptor 104 by decreasing the anode surface area and reducing the available paths to ground. The presence of the skirt 130 and the shape of the skirt 130 and its interaction with the susceptor 104 affects the plasma and thus, the deposition on the substrate 106. The grounded anode may pull the plasma closer to the anode and thus, further away from the center of the substrate 106. The skirt 130, which is electrically biased, may decrease the anode surface area that the plasma sees and tend to pull less of the plasma away from the center. Therefore, the shape and locations of the skirt 130 may be tailored to shape the plasma to permit an even distribution of plasma in the apparatus 100 and thus, uniform properties of the material deposited onto the substrate 106.
[0026] The presence of the skirt 130 increases the surface area of the electrically biased electrode within the apparatus 100. Thus, as compared to the situation where no skirt 130 is present, the surface area of the electrode is increased relative to the grounded surface area. In particular, the ratio of the electrode surface area near the edge of the substrate relative to the grounded surface area near the edge of the substrate 106 is increased. Thus, the material deposited on the substrate 106 may be uniform in properties and thickness.
[0027] The skirt 130 may extend from selected portions of the showerhead 124 in one embodiment. For example, the skirt 130 may extend from the corners of the showerhead 124 and the middle of the sides such as shown in Figures 1A and 1B. In one embodiment, the skirt 130 may extend from the periphery of the showerhead 124 for the entire periphery of the showerhead 124.
[0028] Figure 2A is a schematic cross sectional view of a processing apparatus 200 according to another embodiment of the invention. As shown in Figure 2A, the skirt 204 may be spaced from the showerhead 202. Because the skirt 204 is spaced from the showerhead 202, the showerhead 202 may be coupled to a first power source 206 and the skirt 204 may be coupled to a second power source 208. In one embodiment, the same power source may be coupled separately to both the skirt 204 and the showerhead 202. In one embodiment, the power sources 206, 208 may comprise RF power sources that deliver RF current to the showerhead 202 and skirt 204 respectively.
[0029] The skirt 204, because it is spaced from the showerhead 202, functions as an auxiliary electrode. The skirt 204 is electrically biased just as the showerhead 202 is biased. In one embodiment, the skirt 204 may be electrically biased at the same potential as the showerhead 202. In another embodiment, the showerhead 202 and the skirt 204 may be electrically biased at different electrical potentials. [0030] The skirt 204 may be spaced from the susceptor by a distance represented by arrow "C". During processing, the skirt 204 may be spaced from the susceptor by a distance shown by arrows "D" in Figure 2B. The skirt 204 provides an additional electrode surface in the chamber body. The susceptor and chamber walls, which are grounded as anodes, have a surface area. The skirt 204, by extending down from the showerhead 202, blocks one or more portions of the wall that the plasma sees during processing and thus, decreases the surface area of the anode that the plasma sees or exposed to during processing. Therefore, the electrically biased skirt 204 interacts with the grounded susceptor by decreasing the anode surface area and reducing the available paths to ground. The presence of the skirt 204 and the shape of the skirt 204 and its interaction with the susceptor affects the plasma and thus, the deposition on the substrate. The grounded anode may pull the plasma closer to the anode and thus, further away from the center of the substrate. The skirt 204, which is electrically biased, may decrease the anode surface area that the plasma sees and tend to pull less of the plasma away from the center. Therefore, the shape and locations of the skirt 204 may be tailored to shape the plasma to permit an even distribution of plasma in the apparatus 200 and thus, uniform properties of the material deposited onto the substrate.
[0031] Figure 3 is a schematic isometric view of a gas distribution showerhead 302 and skirt 304 according to one embodiment of the invention. The showerhead 302 has a plurality of gas passages 306 therethrough. As shown in Figure 3, the skirt 304 may be disposed along the periphery of the showerhead 302. The skirt 304 may extend from the periphery of the showerhead 302. In one embodiment, the skirt 304 may be discontinuous around the periphery of the showerhead 302.
[0032] Figure 4 is a schematic isometric view of a gas distribution showerhead 402 and a skirt 404 according to another embodiment of the invention. As shown in Figure 4, the skirt 404 may have a structure that is substantially continuous around the periphery of the showerhead 402. In one embodiment, the skirt 404 extends down from the showerhead 402 by the same distance for the entire periphery of the showerhead 404. In another embodiment, the skirt 404 extends from the showerhead 402 by a varying distance for the entire periphery of the showerhead 402.
[0033] It is to be understood that the shape of the skirt may be customizable and should not be limited to the shapes shown herein. The shape of the skirt and the distance that it extends below the showerhead may be customized to achieve the desired plasma distribution in the processing chamber and hence, the desired film properties.
[0034] By including an electrically biased skirt in the processing chamber, the electrode surface area is increased relative to the grounding surface area. Thus, the plasma may be spread evenly through the processing chamber and the film thickness and properties may be substantially uniform.
[0035] While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

Claims:
1. An apparatus, comprising: a processing chamber body; a gas distribution showerhead disposed in the processing chamber body, the showerhead coupled to a first power source and having a generally rectangular shape; an auxiliary electrode disposed inside the processing chamber body and coupled to the first power source or a second power source; and a susceptor disposed in the processing chamber body and spaced apart from the auxiliary electrode and the gas distribution showerhead.
2. The apparatus of claim 1 , wherein the gas distribution showerhead and the auxiliary electrode comprise a single, unitary piece of material.
3. The apparatus of claim 1 , wherein the gas distribution showerhead has a substantially rectangular shape, and the auxiliary electrode is coupled to the gas distribution showerhead at the corners of the gas distribution showerhead and wherein the auxiliary electrode is coupled to the gas distribution showerhead along the edges of the gas distribution showerhead.
4. The apparatus of claim 1 , wherein the auxiliary electrode is coupled to the first power source.
5. The apparatus of claim 1 , wherein the gas distribution showerhead and the auxiliary electrode are coupled together.
6. The apparatus of claim 1 , wherein the gas distribution showerhead and the auxiliary electrode are electrically isolated from each other.
7. A gas distribution showerhead, comprising: a gas distribution showerhead body having an upstream side and a downstream side with one or more gas passages extending between the upstream side and the downstream side and having a generally rectangular shape; and one or more auxiliary electrodes coupled to and extending from the gas distribution showerhead body from the downstream side.
8. The apparatus of claim 7, wherein the one or more auxiliary electrodes are coupled to a perimeter of the gas distribution showerhead body and wherein the one or more auxiliary electrodes are coupled to one or more corners of the gas distribution showerhead body.
9. The apparatus of claim 7, wherein the gas distribution showerhead body and the one or more auxiliary electrodes comprise a single, unitary piece of material.
10. The apparatus of claim 7, wherein the gas distribution showerhead body and the one or more auxiliary electrodes are separate pieces coupled together and wherein the one or more auxiliary electrodes comprise a plurality of pieces coupled together.
11. A plasma enhanced chemical vapor deposition apparatus, comprising: a processing chamber body; a susceptor disposed in the processing chamber body; a gas distribution showerhead disposed in the processing chamber body and separated from the susceptor, the gas distribution showerhead having a downstream surface facing the susceptor and an upstream surface opposite to the downstream surface and having a generally rectangular shape; and one or more auxiliary electrodes disposed in the processing chamber body and between the gas distribution showerhead and the susceptor, the one or more auxiliary electrodes coupled to a power source and at least partially surrounding a processing space between the susceptor and the gas distribution showerhead.
12. The apparatus of claim 11 , wherein the one or more auxiliary electrodes are coupled to the gas distribution showerhead, wherein the one or more auxiliary electrodes and the gas distribution showerhead are coupled to the same power source, wherein the gas distribution showerhead has a substantially rectangular shape and the one or more auxiliary electrodes are coupled to the corners of the gas distribution showerhead and wherein the one or more auxiliary electrodes comprise a plurality of pieces.
13. The apparatus of claim 11 , wherein the one or more auxiliary electrodes are electrically isolated from the gas distribution showerhead and the susceptor.
14. The apparatus of claim 11 , wherein the one or more auxiliary electrodes are coupled to a periphery of the gas distribution showerhead and extend from the downstream surface.
15. The apparatus of claim 11 , wherein the one or more auxiliary electrodes and the showerhead comprise a single, unitary piece of material.
PCT/US2009/043189 2008-06-20 2009-05-07 Gas distribution showerhead skirt WO2009154889A2 (en)

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