[go: up one dir, main page]

WO2009131913A2 - Matériaux isolants thermiques pour interconnexions et interfaces, leurs procédés de production et leurs utilisations - Google Patents

Matériaux isolants thermiques pour interconnexions et interfaces, leurs procédés de production et leurs utilisations Download PDF

Info

Publication number
WO2009131913A2
WO2009131913A2 PCT/US2009/041052 US2009041052W WO2009131913A2 WO 2009131913 A2 WO2009131913 A2 WO 2009131913A2 US 2009041052 W US2009041052 W US 2009041052W WO 2009131913 A2 WO2009131913 A2 WO 2009131913A2
Authority
WO
WIPO (PCT)
Prior art keywords
composition
thermal
vol
indium
matrix
Prior art date
Application number
PCT/US2009/041052
Other languages
English (en)
Other versions
WO2009131913A3 (fr
Inventor
Kikue S. Burnham
Lea Dankers
Martain William Weiser
Original Assignee
Honeywell International Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc. filed Critical Honeywell International Inc.
Priority to CN2009801230385A priority Critical patent/CN102066488A/zh
Priority to US12/988,104 priority patent/US20110038124A1/en
Publication of WO2009131913A2 publication Critical patent/WO2009131913A2/fr
Publication of WO2009131913A3 publication Critical patent/WO2009131913A3/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737Organic materials with or without a thermoconductive filler
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/10Metal compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/54Inorganic substances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109Indium [In] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29305Gallium [Ga] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29309Indium [In] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29324Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29393Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/294Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/294Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29439Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/29498Coating material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01018Argon [Ar]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01032Germanium [Ge]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01043Technetium [Tc]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01045Rhodium [Rh]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01054Xenon [Xe]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0133Ternary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0134Quaternary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049Nitrides composed of metals from groups of the periodic table
    • H01L2924/04955th Group
    • H01L2924/04953TaN
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19042Component type being an inductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Definitions

  • This disclosure relates to thermal interconnect systems, thermal interface systems and interface materials or compositions in electronic components, semiconductor components, other related layered materials applications and methods of making such materials and systems.
  • thermal grease, or grease- like materials alone or on a carrier in such devices to transfer heat dissipated across physical interfaces and finally to the ambient atmosphere.
  • thermal interface materials are thermal greases, phase change materials and elastomer tapes. Thermal greases and phase change materials often have lower thermal resistance than elastomer tapes because of the ability to be spread in very thin layers and provide intimate contact between adjacent surfaces.
  • thermal impedance values range between 0.1-1.6 cm K/W since this is a strong function of the bondline thickness.
  • thermal grease one drawback of thermal grease is that thermal performance deteriorates significantly after thermal cycling, such as from -65 0 C to 15O 0 C, or after power cycling when used in VLSI chips, for example.
  • Common thermal greases use silicone oils as the carrier or matrix. It has also been found that the performance of these materials deteriorates when large deviations from surface planarity causes gaps to form between mating surfaces in electronic devices or when large gaps between mating surfaces are present for other reasons, such as manufacturing tolerances or the like. The performance and reliability of the electronic device in which they are used is adversely affected when the heat transferability of these materials breaks down. [0005] Thus, it could be helpful to provide materials that meet customer specifications while minimizing the size of the device and number of layers, are more compatible with other materials, particularly at interfaces between materials, and have high thermal conductivity and high mechanical compliance.
  • TIM curable thermal interface material
  • thermally transmissive electronic components including a first substrate; a second substrate; and a cured composition positioned between the first and second substrates.
  • thermoly transmissive electronic component including mixing an epoxy polymeric matrix, a conductive filler, a solder material and a matrix material modification agent and forming a curable composition; positioning the composition between a first substrate and a second substrate; curing the polymeric matrix and applying heat to the matrix sufficient to at least partially melt at least a portion of the solder material such that the solder connects to particles in the filler to form a plurality of continuous heat transmissive pathways between the substrates and through the matrix.
  • Fig. 1 is a schematic sectional view of before curing and after curing stages of two different electronic components.
  • Fig. 2 is a graph showing linear dependence of thermal conductivity on filler loading and the non-linear dependence of the thermal impedance.
  • Fig. 3 is a graph showing thermal impedance versus bond line thickness.
  • Fig. 4 is a graph showing temperature dependence of thermal conductivity and thermal impedance of Example 2.
  • Fig. 5 is a graph showing thermal impedance as a function of applied pressure during curing.
  • Fig. 6a is a graph showing the viscosity of resulting pastes decreased linearly from
  • Fig. 6b is a graph showing thermal conductivity as well as thermal impedance values for tBPGE-added TIMs at Time zero.
  • Fig. 7 is a graph showing the viscosity of three tBPGE-added samples as a function of time to determine their pot life along with the plot of the non tBPGE-added sample.
  • Fig. 8a is a graph showing a plot of the maximum cycle count before failure as a function of filler loading for tBPGE-added TIMs.
  • Fig. 8b is a graph showing thermal impedance versus the number of thermal cycles.
  • Figs. 9a and 9b are graphs showing thermal impedance at varying hours of HAST and high temperature aging respectively.
  • Fig. 9c is a graph showing thermal impedance as a function of the number of reflow cycles.
  • Fig. 10 is a graph showing vitrification as a function of temperature.
  • Fig. 11 is a graph showing vitrification as a function of strain.
  • a heat transfer path is created on the backside of the silicon die through a thermal interface material (TIMl), to a heat spreader, through a second thermal interface material (TIM2), to a heat sink, and eventually to the surrounding ambient atmosphere.
  • TIMl thermal interface material
  • TIM2 second thermal interface material
  • the TIMl fills the gap between the die and the heat spreader to provide a continuous heat transfer path. Since TIMl is the first interface layer to the heat generating die in contrast to TIM2, which is the second interface layer between heat spreader and heat sink, it is typically the more important heat removal interface.
  • the adhesive TIM provides adhesion to a variety of substrates and polar oxide layer of metal fillers via covalent bonding and reduces contact resistance. This property is especially advantageous when the material is subjected to harsh reliability testing such as thermal cycling and humidity testing. Delamination of the TIMs from the substrates due to poor adhesion increases interfacial thermal resistance, reducing heat conduction of the entire package. Thus, the performance of the adhesive TIMs largely depends on the adhesion strength to the die and heat spreader.
  • the crosslinkable adhesive TIM being more stiff and rigid than soft material such as grease, is known to enhance phonon transfer between fillers and polymers, providing higher overall thermal conductivity.
  • Our TIMs consider the following material criteria: 1) Thermal conductivity of >12 W/m-K and thermal impedance of ⁇ 0.05 cm -
  • thermal interface material compositions exhibit low thermal resistance, high thermal performance, and maximum surface wetting for a wide variety of interface conditions and demands.
  • the thermal interface materials can, for example, be used to attach heat generating electronic devices (the computer chip, silicon die and the like) to heat dissipating structures (heat spreaders, heat sinks and the like). Performance of the thermal interface materials is an important factor in ensuring adequate and effective heat transfer in such devices.
  • Our compositions conform to adjacent surfaces (deform to fill surface contours and "wet" the surface), possess a low bulk thermal resistance and possess a low contact resistance. Bulk thermal resistance can be expressed as a function of the composition's thickness, thermal conductivity and area. Contact resistance is a measure of how well a composition is able to transfer heat across the interface which is largely determined by the amount and type of contact between the two materials. We, thus, provide compositions and methods to minimize contact resistance without a significant loss of performance from the materials.
  • compositions comprise at least one matrix material, at least one conductive filler, at least one solder material and at least one material modification agent.
  • Methods of forming these compositions comprise providing each of the at least one matrix material, at least one conductive filler, at least one solder material and at least one material modification agent, blending the components and curing the components pre- or post-application of the thermal interface material to a surface, substrate or component.
  • the compositions comprise an uncured epoxy polymeric matrix (resin).
  • the epoxy polymeric matrix provides a means of adhering substrates together and provides a mechanism to bring together other components that bring additional functionality to the composition.
  • Each of the substrates can comprise a single layer such as a silicon wafer or can comprise one or more layers such as a gold-coated silicon wafer, for example.
  • the epoxy polymeric matrix may be made from any number of epoxy-forming materials.
  • an epoxy matrix can be formed from a mixture of bisphenol A and bisphenol B epoxy pre-polymer, a crosslmker such as MHHPA (methylhexahydrophthalic- anhydride), for example, and an epoxy monomer.
  • Well known materials such as epoxy novalac resins may be used.
  • epoxy novalac resins are EPON. Epoxy novalac resins such as those obtained from Hexion Specialty Chemicals are preferred.
  • t-butylphenyl glycidyl ether exhibits good thermal performance because it has a phenyl group and has good chemical compatibility with the main epoxy pre-polymer, which also contains more phenyl groups.
  • This mixture can include, for example: a) 60-70 vol% of metal loading to polymer (representing both conductive filler and solder material amounts), and 0-20 vol% of t-butylphenyl glycidyl ether.
  • the composition comprises an epoxy polymeric matrix, a conductive filler, a solder material, and a matrix material modification agent, comprising about 1 vol% to about 25 vol%, about 1 vol% to about 50 vol%, about 20 vol% to about 50 vol%, or most preferably about 32 vol% to about 37 vol% of the polymeric matrix, based on the volume of the composition.
  • the epoxy materials should be curable.
  • the epoxy materials can be curable by various methods known in the art. Particularly preferred is heat curing, such as heat curing at about 120 0 C to about 170 0 C. Known curing times applicable to various epoxy materials can be employed such as for about 30 minutes to about 90 minutes.
  • compositions may comprise at least one or a plurality of conductive fillers, such as, for example, tin, bismuth, indium, bismuth-tin alloy, silver metals, indium-tin alloy or combinations thereof that are dispersed in the epoxy polymer matrix. Strong adhesion between the composition and the substrate(s) (such as silicon) is enhanced by addition of a solder material/alloy such as indium-tin alloy in combination with the epoxy polymer matrix.
  • conductive fillers such as, for example, tin, bismuth, indium, bismuth-tin alloy, silver metals, indium-tin alloy or combinations thereof that are dispersed in the epoxy polymer matrix.
  • Indium for example, is an oxygen loving metal and believed to bond with the oxide of a silicon surface, generating indium oxide. Also, we found that epoxy polymers strongly adhere to metal oxides or inorganic oxide surfaces and are better adherers than other thermoset polymeric materials, such as silicone.
  • compositions do not need fluxing agents which are usually used to remove oxides from the solder metal surface.
  • compositions demonstrate improved thermal conductivity (thermal impedance) over fluxing agent/silicone -based thermal interface materials designed for metal surfaces.
  • the conductive filler component may be dispersed in the composition and the filler should advantageously have a high thermal conductivity.
  • a high conductivity filler should have a thermal conductivity of greater than about 15 and, in some instances, at least about 40 W/m-K.
  • a conductive filler having a thermal conductivity of less than about 15 W/m-K is a low thermal conductivity filler. It is preferred to have a filler component of not less than about 80 W/m-K thermal conductivity.
  • silver and copper fillers both have thermal conductivities of greater than 300 W/m-K and Bi42Sn solder has a conductivity of 19 W/m-K.
  • Suitable filler materials include, but are not limited to silver, copper, aluminum, and alloys thereof; boron nitride, aluminum spheres, aluminum nitride, silver coated copper, silver coated aluminum, carbon fibers and carbon fibers coated with metals, metal alloys, conductive polymers or other composite materials. Combinations of boron nitride and silver or boron nitride and silver-copper alloy provide enhanced thermal conductivity. Silver and silver-coated copper in amounts of at least about 40 wt % are particularly useful. These materials may also comprise metal flakes or sintered metal flakes.
  • the filler components may comprise large silver powders (20 ⁇ m) from TECHNIC, medium silver-coated copper (9 ⁇ m) from FERRO, small silver powders (3 ⁇ m) from METALOR, or combinations thereof.
  • the composition comprises about 60 vol% to about 80 vol% of the conductive filler, based on the volume of the composition.
  • the conductive filler component may comprise at least some particles having a diameter less than about 100 ⁇ m. The diameter of at least some of those particles may be less than about 80 ⁇ m or even about 40 ⁇ m.
  • the conductive filler components also may comprise thermal reinforcement materials, such as screens, mesh, foam, cloth or combinations thereof.
  • Thermal reinforcement materials may comprise highly conductive metals, ceramics, composites, or carbon materials, such as low coefficient of thermal expansion (CTE) materials or shape memory alloys.
  • CTE coefficient of thermal expansion
  • Metal or other highly conductive screen, mesh, cloth, or foam are used to enhance thermal conductivity, tailor CTE, adjust bondline thickness (BLT), and/or modify modulus and thermal fatigue life of the composition.
  • thermal reinforcement materials can be treated in a number of ways to improve the performance of the composition.
  • the reinforcement can be pressed or rolled to reduce the thickness and BLT while also increasing the area density of the reinforcement. This is particularly effective with Cu screen.
  • the surface of the reinforcement can be treated to slow the formation of intermetallic compounds due to reaction with the solder component (e.g., plating a Cu mesh with Ni). It can also be treated to enhance wetting of the reinforcement by the solder component (e.g., Ni plating of carbon/graphite cloth or removal of oxides by methods such as exposure to forming gas (hydrogen in nitrogen or argon) at elevated temperature, wash with an acid, or coating with a flux).
  • a flexible frame e.g., polymer, carbon/graphite, ceramic, metal, composite or other flexible frame
  • Conductive filler components may be coated with by any suitable method or apparatus including, for example, coating the conductive filler components with solder in the molten state, by coating utilizing plasma spray, by plating or by combinations thereof.
  • the compositions also comprise a solder material.
  • the solder material may comprise, for example, any suitable solder material or metal, such as indium, silver, copper, aluminum, tin, bismuth, lead, gallium and alloys thereof. It is preferred that the solder material comprise indium or indium-based alloys.
  • Solder materials that are dispersed in the composition may be any suitable solder material for a desired application.
  • the composition comprises about 20 vol% to about 50 vol% of the solder material, based on the volume of the composition.
  • Preferred solder materials include, but are not limited to, indium-tin alloys, indium-silver alloys, indium- bismuth alloys, tin-indium-bismuth, indium-tin-silver-zinc, indium-based alloys, tin-silver- copper alloys, tin-bismuth alloys, gallium compounds and gallium alloys.
  • Especially preferred solder materials are those materials that comprise indium.
  • the solder may or may not be doped with additional elements to promote wetting capabilities.
  • solder materials are preferably low melting temperature solder materials wherein the solder materials typically melt at temperatures between about 100 0 C and about 170 0 C. Solder materials that have melting temperatures above about 200 0 C would be considered high melting temperature solder materials and would be less desirable as the melting temperature increases.
  • the bismuth-tin alloys may comprise less than about 60 weight percent (wt %) of tin, based on the weight of the alloy.
  • the bismuth-tin alloys may particularly comprise between about 30 and about 60 wt % of tin.
  • the tin- indium-bismuth alloys may comprise less than about 80 wt % of tin, less than about 50 wt % of indium and less than about 15 wt % of bismuth.
  • the tin-indium-bismuth alloys may also comprise between about 40-80 wt % of tin, between about 10-50 wt % of indium and about 2-15 wt % of bismuth.
  • Indium- tin-silver- zinc alloys may comprise less than about 65 wt % of indium, less than about 65 wt % of tin, less than about 10 wt % of silver and less than about 10 wt % of zinc.
  • the indium- tin-silver- zinc alloys may also comprise about 35-65 wt % of indium, about 35-65 wt % of tin, about 1- 10 wt % of silver and about 1 - 10 wt % of zinc.
  • the at least one solder component comprises at least some components having a diameter less than about 40 ⁇ m.
  • the average component diameter is less than about 40 ⁇ m.
  • the material modification agent includes compounds or compositions that modify the composition to improve thermal performance, compatibility and/or physical quality of the resulting composition, such as by improving the stability of the polymer matrix, decreasing the viscosity of the material, increasing the surface contact or wettability between the composition and the surrounding surfaces, improve elasticity of the composition and resulting layers, tapes or pastes, results in higher thermal filler loading, tailors the curing capability of the composition for the application or a combination thereof.
  • the at least one material modification agent may comprise at least one organic compound, at least one modified thermal filler profile, at least one stability additive, at least one viscosity agent and/or combinations thereof.
  • the material modification agent may include viscosity modifying components that are designed to reduce the viscosity of the epoxy resin to allow a larger volume fraction of metal filler than could be accommodated in conventional applications.
  • viscosity -modifying components include low molecular weight polymers and epoxy monomer, t-butylphenyl glycidyl ether (tBPGE) and allyl glycidyl ether (AGE) are particularly preferred.
  • the composition comprises an epoxy polymeric matrix, a conductive filler, a solder material, and a matrix material modification agent, wherein the matrix material modification agent is a viscosity modifier, is a mixture of tBPGE and AGE and is about 0 vol% to about 20 vol% tBPGE and about 0 vol% to about 5 vol% AGE, based on the volume of the composition.
  • the viscosity of the composition is thus preferably about 100,000 cps at 25°C or less.
  • Another material modification agent includes at least one modified thermal filler.
  • Modified thermal fillers include thermal fillers incorporated into the composition such that the particle size distribution achieves the highest possible volume fraction loading. For example, some of the particles may be larger in diameter, while the remaining particles are significantly smaller in diameter. The average diameter may be the same as a particle size profile that contains all medium sized particles, but by making this modification to the particle size distribution, a deep trough between the peaks in the particle size distribution is formed and higher filler loading is achieved than can be achieved by either a monomodal particle size distribution or one where the through in the particle size distribution is not very deep and the distribution is therefore more uniform.
  • the thermal performance on various substrates surfaces such as silicon die to nickel plated heat spreader surfaces for our compositions preferably is as follows: a) thermal conductivity of greater than 12 W/m-K, b) thermal conductivity after highly accelerated stress test (HAST) of greater than 10, c) thermal conductivity after re flow of greater than 9, and/or d) thermal conductivity after 100 cycles of a thermal cycling of greater than 10.
  • HAST highly accelerated stress test
  • the composition thus demonstrate excellent thermal performance before and after reliability testing, as well as the initial thermal conductivity.
  • the thermal performance on Au-Au (metalized die and spreader surfaces) for the compositions exhibits excellent reliability, passing both 1000 cycles of a thermal cycling and 96hrs of HAST without meaningful changes in thermal impedance after the test.
  • the thermal interface materials may also have the following beneficial characteristics: a) stronger adhesion of the epoxy polymer toward the substrate(s), b) further improved adhesion by adding small amounts of solder such as indium-tin alloy, and c) lowered viscosity by using low viscous epoxy resin.
  • solder such as indium-tin alloy
  • Another advantage of the indium-tin alloy is that it provides for good lubricating behavior.
  • compositions have several advantages directly related to use and component engineering, such as: a) filling small gaps on the order of 0.2 millimeters or less, b) efficiently dissipating heat in those small gaps as well as larger gaps, unlike most conventional solder materials, and c) can be easily incorporated into micro components, components used for satellites, and small electronic components.
  • the compositions also have several advantages directly related to use and component engineering, such as: a) high bulk thermal conductivity, b) metallic bonds may be formed at joining surfaces, thereby lowering contact resistance and c) can be easily incorporated into micro components, components used for satellites and small electronic components.
  • the composition can be provided as a dispensable paste to be applied by dispensing methods such as, for example, screen printing, stencil printing, automated dispensing and the like and then cured as desired. It can also be provided as a highly compliant, cured, elastomer film or sheet for pre-application on interface surfaces, such as heat sinks. It can further be provided and produced as a soft gel or liquid that can be applied to surfaces by any suitable dispensing method, such as screen-printing, ink jet printing or the like. The composition can be provided as a tape that can be applied directly to interface surfaces or electronic components. [0058] It can be useful to utilize stencil printing as a deposition method.
  • the viscosity can be lowered by utilizing at least one of a) lowering the weight percentage of the metal loading to the polymer mixture, b) adding more weight percent of an epoxy monomer with a higher boiling point and/or c) a viscosity modifier.
  • the subtle change in the metal loading to the polymer mixture results in a significant decrease in the viscosity of the mixture.
  • the components can be mixed and a paste formed. The paste can then be deposited on a substrate such as a die by syringe, covered with a heat spreader and cured.
  • compositions and related layers can be formed in any suitable thickness, depending on the needs of the electronic component or other use as long as the thermal interface component is able to sufficiently perform the task of dissipating some or all of the heat generated from the electronic component to which it is attached.
  • Thicknesses may comprise ranges of about 0.030 - about 0.150 mm, preferably about 0.050 - about 0.100 mm. Thicknesses may also be within the wider range of about 0.010 - about 0.250 mm in some applications.
  • This stress transfer can be minimized by increasing the bondline thickness of the composition, reducing the coefficient of thermal expansion of the heat spreader or changing the geometry of a heat spreader to minimize stress transfer.
  • Increasing the bondline thickness generally increases the thermal resistance of the interface, but including a high conductivity mesh as part of a thicker composition can minimize this increase and even result in lower thermal resistance than for the composition alone.
  • Examples of lower CTE materials for heat spreaders are AlSiC, CuSiC, copper- graphite composites, carbon-carbon composites, diamond, CuMoCu laminates and the like.
  • Examples of geometric changes are adding a partial or through slot to the spreader to decrease spreader thickness and forming a truncated, square based, inverted pyramid shape to lower stress and stiffness by having the spreader cross-section be lower near the semiconductor die.
  • the composition may be applied to a metal-based coating, layer and/or film.
  • Metal-based coating layers may comprise any suitable metal that can be applied to the surface of the composition or surface/support material in a layer.
  • the metal-based coating layer may comprise indium, such as indium metal, InBi alloy, InBiGd alloy and InAg alloy, for example, and can also include nickel and/or gold, among others.
  • These metal-based coating layers are generally applied to a surface by any method capable of producing a substantially uniform layer with a minimum number of pores or voids and can further apply the layer with a relatively high deposition rate.
  • Many suitable methods and apparatus are available to apply layers or ultra thin layers of this type, such as spot plating or pulsed plating. Pulsed plating (which is intermittent plating as opposed to direct current plating) can apply layers that are free or virtually free of pores and/or voids.
  • the composition can be directly deposited onto at least one of the sides of a heat spreader component, for example, such as the bottom side, the top side or both. Such deposition can be directly onto the spreader or onto a layer on the spreader such as a gold layer, for example. On the other hand, the composition can be deposited onto a die. Such deposition can be direct onto a silicon wafer die or onto a layer on the die such as a gold layer, for example.
  • the composition may be silk screened, stencil printed, screen printed or dispensed directly onto the heat spreader, die or heat generating device by methods such as jetting, thermal spray, liquid molding or powder spray, and also the common method of paste dispensing via a syringe tipped with a needle or a nozzle.
  • a film of the composition may be deposited and combined with other methods of building adequate thermal interface material thickness, including direct attachment of a preform or silk screening of the composition.
  • Methods of forming layered compositions include, but are not limited to: a) providing a heat spreader component, wherein the heat spreader component comprises a top surface, a bottom surface and at least one heat spreader material; b) providing at least one composition wherein the composition is directly deposited onto the bottom surface of the heat spreader component; c) depositing, applying or coating a metal-based coating, film or layer on at least part of the bottom surface of the heat spreader component; d) depositing, applying or coating the at least one composition onto at least part of at least one of the surfaces of the heat spreader component or heat generating device, and e) bringing the bottom of the heat spreader component with the composition into contact with the heat generating device, generally a semiconductor die.
  • the composition layer may comprise a portion that is directly coupled to the heat spreader material and a portion that is exposed to the atmosphere, or covered by a protective layer or film that can be removed just prior to installation of the heat spreader component. Additional methods include, but are not limited to, providing at least one adhesive component and coupling the at least one adhesive component to at least part of at least one of the surfaces of the at least one heat spreader material and/or to or in at least part of the composition. At least one additional layer, including a substrate layer, can be coupled to the layered composition.
  • compositions possessing a high thermal conductivity and a high mechanical compliance e.g., yield elastically or plastically on a local level when force is applied.
  • Compositions possess a high thermal conductivity and good gap-filling properties When properly produced, the composition spans the distance between the mating surfaces of the heat producing device and the heat spreader component thereby allowing a continuous high conductivity path from one surface to the other surface.
  • Suitable compositions comprise those materials that can conform to the mating surfaces, possess a low bulk thermal resistance and possess a low contact resistance.
  • Pre-attached/pre-assembled thermal solutions and/or IC (interconnect) packages comprise one or more components of the compositions and at least one adhesive component.
  • Adhesive component means any substance, inorganic or organic, natural or synthetic that is capable of bonding other substances together by surface attachment.
  • the adhesive component may be added to or mixed with the composition, may actually be the composition or may be applied to, but not mixed with the composition.
  • Representative examples of some contemplated adhesive components comprise double-sided tape from SONY, such as SONY T4411, 3M F9460PC or SONY T4100D203. The adhesive may serve the additional function of attaching the heat spreading component to the package substrate independent of the composition.
  • compositions, along with layered compositions may then be applied to a substrate, another surface, or another layered material.
  • the electronic component may comprise, for example, a composition, a substrate layer and an additional layer.
  • Substrates may comprise any desirable substantially solid material.
  • Particularly desirable substrate layers comprise non-metalized dies or surface, films, glass, ceramic, plastic, metal or coated metal, or composite material.
  • the substrate may comprise a silicon or germanium arsenide die or wafer surface, a packaging surface such as found in a copper, silver, nickel or gold plated leadframe or heat spreader, a copper surface such as found in a circuit board or package interconnect trace, a via- wall or stiffener interface ("copper” includes considerations of bare copper and it's oxides), a polymer-based packaging or board interface such as found in a polyimide -based flex package, lead or other metal alloy solder ball surface, glass and polymers such as polyimide.
  • the "substrate” may even be defined as another polymer material when considering cohesive interfaces.
  • the substrate may comprise a material common in the packaging and circuit board industries such as, for example, silicon, copper, glass, and another polymer.
  • the first substrate of a thermally transmissive electronic component may be a heat sink.
  • Additional layers of material may be applied to the compositions or layered interface materials to build a layered component or printed circuit board.
  • the additional layers may comprise materials similar to those already described herein, including metals, metal alloys, composite materials, polymers, monomers, organic compounds, inorganic compounds, organometallic compounds, resins, adhesives and optical wave-guide materials.
  • Several methods and many compositions can be utilized to form pre-attached/pre- assembled thermal solution components.
  • a method for forming a thermal solution/package and/or IC package includes: a) providing the thermal interface material or layered interface material; b) providing at least one surface or substrate; c) coupling the at least one composition and/or layered composition to form an adhesive unit; d) coupling the adhesive unit to the at least one surface or substrate to form a thermal package; e) optionally coupling an additional layer or component to the thermal package.
  • Applications of the thermal solutions, IC packages, thermal interface components, layered interface materials and heat spreader components may comprise incorporating the materials and/or components into another layered material, an electronic component or a finished electronic product.
  • Electronic components are generally thought to comprise any layered component that can be utilized in an electronic-based product.
  • Electronic components may comprise circuit boards, chip packaging, separator sheets, dielectric components of circuit boards, printed- wiring boards, and other components of circuit boards, such as capacitors, inductors, and resistors.
  • Fig. 1 it can be seen that two applications of the composition in conjunction with several different types of substrates is illustrated.
  • the lefthand side shows a metallized substrate wherein the metal layers covering the respective substrates area coated with gold.
  • the righthand side shows non-metallized substrates wherein one substrate is a nickel substrate and the other is a silicon substrate such as a silicon wafer.
  • the top half of Fig. 1 shows the substrates (with or without layers) sandwiching an uncured epoxy resin matrix containing high conductivity filler as shown with the light particles and solder as shown with the dark particles.
  • the matrix modification agent is not separately shown, but is mixed into the epoxy polymer matrix.
  • Fig. 1 shows the resulting electronic component subsequent to curing.
  • the polymer matrix has cured into a solid matrix and encompasses conductive pathways that are formed from the non-melted high conductivity filler material and melted solder that forms pathways between adjacent filler particles.
  • the solder in some instances surrounds the filler particles and in others does not.
  • continuous heat conductive pathways are formed between the opposed substrates and/or metallic layers associated therewith. This structures leads to a good balance of desirable properties. Examples Materials and Thermal Diffusivity Measurement [0075] Selected amounts of premixed conductive fillers were added to a mixture of crosslinkable resins and subjected to 15 min of high-shear mixing to obtain homogeneous pastes.
  • Thermal diffusivity values were measured by a Netzsch flash diffusivity instrument (LFA 447 NanoFlashTM). The well-mixed pastes were applied to the top of the custom stainless steel stencil and a squeegee drawn across to push the material through the stencil openings and print on the metalized heat spreader (ca. 1.27 x 1.27 cm, 0.77 mm thickness).
  • the die side metallization was applied by sputtering NiV/Au and heat spreader metallization by electroplating Ni/Au on the Cu substrate. The same substrate type was used for the thermal diffusivity measurements unless otherwise specified. A fixture was used to hold the substrate and maintain uniform positioning. The die (ca.
  • the interface impedance is not expected to be spatially uniform. Because the measurement involves the sample as a whole, the impedance values showed must be regarded as averages over the total cross-sectional area. All samples were prepared in the same procedure unless otherwise specified.
  • Thermal impedance is a more accurate measurement of performance than thermal conductivity alone since true performance of a TIM should depend on the quality of heat conduction through the TIMs and the quality of contact between the TIMs and the two mating surfaces.
  • a plot of thermal impedance as a function of thickness for Example 1 is shown in Fig. 3.
  • the effective thermal conductivity and thermal impedance is 14.0 W/m-K and 0.03 cm 2 -K/W at 50 micron, respectively using metalized die.
  • the bulk thermal conductivity calculated from the line's slope showed ⁇ 15 W/m-K.
  • Example 3 shows a bulk thermal conductivity, thermal impedance at 50 micron, and interface impedance of ⁇ 15 W/m-K, -0.05 cm 2 -K/W, and -0.02 cm 2 -K/W respectively. Comparing the results, we conclude that the bulk heat conduction performance is similar for the TIM regardless of the substrate surfaces, which is in marked contrast with the results previously obtained in analogue TIMs in which a different adhesive polymer is used. In that case, a 60% decrease in the thermal conductivity as well as thermal impedance was observed on the bare Si die compared to that on the metalized die. It is clear that Example 1 can be used on a variety of surfaces; however, our focus here will be directed to the application on the metalized die.
  • Fig. 4 shows the temperature dependence of the thermal conductivity of Example 2.
  • the thermal conductivity is found to not change with the temperature up to 150 0 C. This is expected since the microstructure of the bulk TIM as well as interface should not change in this temperature range.
  • most of the computer processors operate at 80 - 120 0 C, thus Example 2 which maintains the higher thermal conductivity, 12 W/m-K, even at the operating temperature can ensure efficient heat transfer.
  • a 25% decrease in thermal conductivity and associated increase in thermal impedance was observed.
  • it is believed that part of the composite may become soft due to the melting of fusible fillers.
  • the decrease in the thermal conductivity may be related to the thermal material degradation or inefficient phonon transfer due to loss of rigidity of the composite.
  • Effect of Curing Conditions [0080] To enhance thermal interface properties, it is important to have proper curing conditions of TIM materials. We investigated the effect of applied pressure on the thermal impedance during curing and of curing temperature. The curing time is kept the same in both tests. Applying pressure on samples during curing can improve the TIM contact to the substrate surface and reduce the bond line thickness, thus reducing the thermal resistance.
  • Fig. 5 shows the thermal impedance as a function of applied pressure during curing. As expected, thermal impedance decreases when the pressure increases, reaching a steady state after applying 24 psi.
  • the drops may result from multiple effects on the material properties such as the morphological change, reduction of porosity, and densification of the bulk as well as the reduction of voids or air gaps at the interfaces.
  • Table 1 shows the effect of curing temperature on the thermal conductivity of all three APS-a samples. We selected three different curing temperatures: 120 0 C, 45 min cure 120 0 C, 45 min cure, with a 160 0 C, 45 min postcure 160 0 C, 45 min cure. Table 1
  • the viscosity of the paste with different filler loading was measured with Haake rheometer at 25 0 C at shear rate of 1/25 s using a 20 mm cone and plate geometry. It showed a linear dependence of the filler loading over the range we investigated, already approaching 132,000 cps even at filler loading of 63.6 vol%.
  • the filler loading to obtain a viscosity of 100,000 cps, our target viscosity, is calculated to be 61.7 vol% at which the thermal conductivity is extrapolated to be ⁇ 8 W/m-K.
  • the pot life was determined as time until a 10% increase in the viscosity from time zero when the paste is left under ambient conditions.
  • the paste should be in one part formulation, not requiring any mixing prior to the dispensing as opposed to two part formulations.
  • a Diluent A tBPGE
  • the Diluent A functioned as a viscosity modifier as well as an end-capping and increased a pot life.
  • the viscosity of the resulting paste is again largely dominated by filler loading over a range of the diluent we investigated.
  • we decided to investigate the effect of the diluent amount at the same filler loading 64 vol%, +/-0.3%). As seen in Fig.
  • Example 7 shows the viscosity of those three diluent-added samples as a function of time to determine their pot life along with the plot of the non diluent-added sample.
  • Example 7 (similar to Example 1 but with 93.5% metal) at the similar metal loading.
  • the pot life of the three diluent-added samples is significantly increased, indicated by a relatively modest increase in their viscosity over time, as opposed to a significant increase for non diluent-added sample, for the same filler loading.
  • the viscosity, pot life, and the thermal performance of all samples with and without Diluent A were summarized in Table 2. The increase in pot life with increasing Diluent A amount is most probably due to the slowing of the polymer crosslinking reaction.
  • HAST Highly Accelerated Stress Test
  • TIMs were tested for HAST (85°C, 85% RH and 2 atm absolute pressure). If the material has significant amount of free volume in the bulk or is hygroscopic, then it would take up moisture and cause delamination from the substrates. Both TIMs showed a tight distribution with no degradation after 96 hours, indicating that they are stable under the moisture stress environment.
  • thermal stress the samples were put in an over and heated at a temperature of 150 0 C for longer durations.
  • Both TIMs showed no change in thermal impedance at the end of 600 hours, indicating the thermal stress induced at this temperature and duration is not an issue.
  • the TIM can tolerate the high temperature of solder reflow, they ere subjected to 5 to 7 reflow cycles at a peak temperature of 260 0 C. Gradual degradation was observed, but this was within our limit after 3 reflow cycles. Delamination of the TIMs from the interfaces was not observed based on the SEM analysis. Overall, the thermal impedance of both TIM remained relatively constant throughout the various stress tests.
  • Figure 10 shows that both the shear modulus and the complex shear modulus increase with temperature except for a dips just above 12O 0 C and 14O 0 C where the solders melt. They do not cross during this temperature sweep.
  • Figure 11 shows the complex viscosity as a function of strain showing a monotonic decrease with increasing strain.
  • Examples 1 - 6 show a good balance of properties, including low viscosity, high thermal conductivity, good reliability and good pot life. All of Examples 1 - 6 provide at least a minimal amount of balance between those characteristics. The preferred use of AGE and/or tBPGE demonstrates that balance. [0090] In Examples 1 and 2, AGE was used, but not tBPGE. Thus, those Examples provided a good balance. However, utilization of tBPGE instead of AGE provided even more enhanced results as indicated in Examples 4, 5 and 6. Example 3 shows a utilization of both AGE and tBPGE which also provides an excellent balance of thermal conductivity, reliability, viscosity and pot life.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Epoxy Resins (AREA)

Abstract

La présente invention a trait à une composition durcissable pour matériau isolant thermique pour interface comprenant une matrice adhésive polymère à base d'époxy; une charge hautement conductrice; un matériau d'apport pour soudure à température de fusion basse; et un agent de modification du matériau servant de matrice.
PCT/US2009/041052 2008-04-21 2009-04-18 Matériaux isolants thermiques pour interconnexions et interfaces, leurs procédés de production et leurs utilisations WO2009131913A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2009801230385A CN102066488A (zh) 2008-04-21 2009-04-18 热互连和界面材料、它们的制造方法和用途
US12/988,104 US20110038124A1 (en) 2008-04-21 2009-04-18 Thermal interconnect and interface materials, methods of production and uses thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4671908P 2008-04-21 2008-04-21
US61/046,719 2008-04-21

Publications (2)

Publication Number Publication Date
WO2009131913A2 true WO2009131913A2 (fr) 2009-10-29
WO2009131913A3 WO2009131913A3 (fr) 2010-03-04

Family

ID=41217374

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/041052 WO2009131913A2 (fr) 2008-04-21 2009-04-18 Matériaux isolants thermiques pour interconnexions et interfaces, leurs procédés de production et leurs utilisations

Country Status (4)

Country Link
US (1) US20110038124A1 (fr)
CN (1) CN102066488A (fr)
TW (1) TW201002777A (fr)
WO (1) WO2009131913A2 (fr)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101899288B (zh) * 2009-05-27 2012-11-21 清华大学 热界面材料及其制备方法
CN102174687A (zh) * 2011-03-30 2011-09-07 北京矿冶研究总院 一种提高碳布/酚醛树脂抗高温烧蚀性能的方法
US20120292005A1 (en) * 2011-05-19 2012-11-22 Laird Technologies, Inc. Thermal interface materials and methods for processing the same
JP6222909B2 (ja) * 2011-10-07 2017-11-01 キヤノン株式会社 積層型半導体装置、プリント回路板、及びプリント配線板の接合構造
CN103205056B (zh) * 2012-01-17 2016-03-30 比亚迪股份有限公司 一种正温度系数复合材料和一种热敏电阻
CN104350814B (zh) * 2012-06-15 2017-10-13 株式会社钟化 散热结构体、便携式信息终端、电子设备及电子设备的修理方法
TWI601249B (zh) * 2013-05-22 2017-10-01 Kaneka Corp Cooling structure
RU2535527C1 (ru) * 2013-08-23 2014-12-10 Шлюмберже Текнолоджи Б.В. Способ определения количественного состава многокомпонентной среды (варианты)
CN103560089B (zh) * 2013-10-22 2017-02-08 中船重工西安东仪科工集团有限公司 表贴元器件引脚去氧化方法
US9826662B2 (en) * 2013-12-12 2017-11-21 General Electric Company Reusable phase-change thermal interface structures
TWI657132B (zh) * 2013-12-19 2019-04-21 德商漢高智慧財產控股公司 具有基質及經密封相變材料分散於其中之組合物及以其組裝之電子裝置
EP3105300B1 (fr) 2014-02-13 2019-08-21 Honeywell International Inc. Matériaux d'interface thermique compressibles
DE112014006568T5 (de) * 2014-04-09 2017-02-16 Gm Global Technology Operations, Llc Systeme und verfahren zum verstärkten kleben
US9860988B2 (en) 2014-12-20 2018-01-02 Intel Corporation Solder contacts for socket assemblies
CN106158790B (zh) * 2015-04-10 2018-11-16 台达电子工业股份有限公司 功率模块及其热界面结构
WO2017002315A1 (fr) * 2015-06-29 2017-01-05 タツタ電線株式会社 Composition adhérant a un matériau de dissipation de chaleur, matériau de dissipation de chaleur portant un adhésif, substrat pour incrustation, et leur procédé de fabrication
CN108260366B (zh) * 2015-09-07 2020-01-14 朱鹤植 电磁波吸波及屏蔽用和电子设备超强散热用融合片及其制造方法
WO2017044712A1 (fr) 2015-09-11 2017-03-16 Laird Technologies, Inc. Dispositifs permettant d'absorber de l'énergie provenant de composants électroniques
JP6735764B2 (ja) * 2015-10-02 2020-08-05 三井金属鉱業株式会社 ボンディング接合構造
EP3426746B1 (fr) 2016-03-08 2021-07-14 Honeywell International Inc. Matériau à changement de phase
US9873774B1 (en) 2016-09-01 2018-01-23 International Business Machines Corporation Shape memory thermal interface materials
US9937662B2 (en) 2016-09-01 2018-04-10 International Business Machines Corporation Shape memory thermal interface materials
EP3621767B1 (fr) * 2017-05-12 2022-03-16 Alpha Assembly Solutions Inc. Matériau de soudure et procédé pour l'attachement d'une puce
US11041103B2 (en) 2017-09-08 2021-06-22 Honeywell International Inc. Silicone-free thermal gel
US11910520B2 (en) * 2018-02-02 2024-02-20 Kuprion Inc. Thermal management in circuit board assemblies
US11072706B2 (en) 2018-02-15 2021-07-27 Honeywell International Inc. Gel-type thermal interface material
CN108615712A (zh) * 2018-05-17 2018-10-02 江苏芯澄半导体有限公司 一种宽禁带半导体碳化硅功率器件封装结构及封装方法
US10903184B2 (en) * 2018-08-22 2021-01-26 International Business Machines Corporation Filler particle position and density manipulation with applications in thermal interface materials
US11373921B2 (en) 2019-04-23 2022-06-28 Honeywell International Inc. Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing
CN113874465B (zh) * 2019-05-21 2024-05-24 Ddp特种电子材料美国有限责任公司 热界面材料
CN112188791A (zh) * 2019-07-01 2021-01-05 河南烯力新材料科技有限公司 弹性散热结构和电子装置
TW202134045A (zh) * 2019-10-25 2021-09-16 德商漢高智慧財產控股公司 可三維圖案化之熱介面
KR102724547B1 (ko) 2020-02-13 2024-10-30 삼성전자주식회사 반도체 패키지
US10777483B1 (en) 2020-02-28 2020-09-15 Arieca Inc. Method, apparatus, and assembly for thermally connecting layers
CN112708400A (zh) * 2020-12-17 2021-04-27 上海先方半导体有限公司 一种热界面材料及其制造方法
US20220359339A1 (en) * 2021-05-05 2022-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-TIM Packages and Method Forming Same
EP4206299A1 (fr) * 2021-12-31 2023-07-05 Tianjin Laird Technologies Limited Nouveau matériau de tampon à faible dégagement d'huile
TW202407077A (zh) * 2022-06-22 2024-02-16 德商漢高股份有限及兩合公司 含軟性填料分散物之熱介面材料
US12027442B1 (en) 2023-01-31 2024-07-02 Arieca Inc. Thermal interface material, an integrated circuit formed therewith, and a method of application thereof
JP2025024319A (ja) * 2023-08-07 2025-02-20 デクセリアルズ株式会社 積層体及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644003A (en) * 1994-07-19 1997-07-01 Sumitomo Chemical Company, Ltd. Epoxy resin composition, process for producing the same and resin-sealed semiconductor device
US20040200879A1 (en) * 2001-05-24 2004-10-14 Fry's Metals, Inc. Thermal interface material and solder preforms
US20050087891A1 (en) * 2003-10-23 2005-04-28 Rumer Christopher L. No-flow underfill composition and method
US20070051773A1 (en) * 2005-09-02 2007-03-08 Ruchert Brian D Thermal interface materials, methods of preparation thereof and their applications

Family Cites Families (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4065197A (en) * 1974-06-17 1977-12-27 Chomerics, Inc. Isolated paths connector
US4265775A (en) * 1979-08-16 1981-05-05 International Business Machines Corporation Non-bleeding thixotropic thermally conductive material
US4293477A (en) * 1980-01-04 1981-10-06 Ford Motor Company Highly filled thermally conductive elastomers III
EP0042693B1 (fr) * 1980-06-21 1985-03-27 LUCAS INDUSTRIES public limited company Composant de puissance à semi-conducteur et procédé pour sa fabrication
US4585848A (en) * 1981-04-09 1986-04-29 Evans Edwin R Fluorosilicone rubber composition, process and polymer
US4461867A (en) * 1982-09-27 1984-07-24 General Electric Company Composition for promoting adhesion of curable silicones to substrates
US4790968A (en) * 1985-10-19 1988-12-13 Toshiba Silicone Co., Ltd. Process for producing pressure-sensitive electroconductive sheet
US5891951A (en) * 1987-09-14 1999-04-06 Idemitsu Kosan Co., Ltd. Styrene-based resin composition
US4737562A (en) * 1986-10-15 1988-04-12 Dow Corning Corporation Self-adhering polyorganosiloxane elastomer compositions and method for preparing same
US5094769A (en) * 1988-05-13 1992-03-10 International Business Machines Corporation Compliant thermally conductive compound
US4931479B1 (en) * 1988-11-07 2000-10-10 Parker Intangibles Inc Foam in place conductive polyurethane foam
US5180523A (en) * 1989-11-14 1993-01-19 Poly-Flex Circuits, Inc. Electrically conductive cement containing agglomerate, flake and powder metal fillers
US5183593A (en) * 1989-11-14 1993-02-02 Poly-Flex Circuits, Inc. Electrically conductive cement
EP0476224A1 (fr) * 1990-08-21 1992-03-25 Ricon Resins, Inc. Composition adhésive de caoutchouc
US5122562A (en) * 1990-09-25 1992-06-16 General Electric Company Heat curable silicone rubber compositions
US5137959A (en) * 1991-05-24 1992-08-11 W. R. Grace & Co.-Conn. Thermally conductive elastomer containing alumina platelets
US5250228A (en) * 1991-11-06 1993-10-05 Raychem Corporation Conductive polymer composition
US5227093A (en) * 1991-11-29 1993-07-13 Dow Corning Corporation Curable organosiloxane compositions yielding electrically conductive materials
US5380770A (en) * 1992-04-09 1995-01-10 General Electric Company Heat cured silicone rubber compositions containing a potassium aluminosilicate filler which provides resistance to hydrocarbon oils and adjustable shrinkage
DE4320527A1 (de) * 1992-06-22 1993-12-23 Whitaker Corp Elektrisch leitfähiges Gel
US5440230A (en) * 1993-04-02 1995-08-08 Heflinger; Bruce L. Combinatorial signature for component identification
US5368814A (en) * 1993-06-16 1994-11-29 International Business Machines, Inc. Lead free, tin-bismuth solder alloys
US5364921A (en) * 1993-08-17 1994-11-15 Dow Corning Corporation Silicone rubber with self-adhesion to glass and metal
JP2938340B2 (ja) * 1994-03-29 1999-08-23 信越化学工業株式会社 熱伝導性複合シート
US5852548A (en) * 1994-09-09 1998-12-22 Northrop Grumman Corporation Enhanced heat transfer in printed circuit boards and electronic components thereof
US5665473A (en) * 1994-09-16 1997-09-09 Tokuyama Corporation Package for mounting a semiconductor device
JP3461404B2 (ja) * 1995-03-29 2003-10-27 東レ・ダウコーニング・シリコーン株式会社 硬化性オルガノポリシロキサン組成物
US5837119A (en) * 1995-03-31 1998-11-17 International Business Machines Corporation Methods of fabricating dendritic powder materials for high conductivity paste applications
US5725707A (en) * 1995-04-10 1998-03-10 Northrop Grumman Corporation Enhanced conductive joints from fiber flocking
US5612363A (en) * 1995-06-02 1997-03-18 Berlex Laboratories, Inc. N,N-di(aryl) cyclic urea derivatives as anti-coagulants
US5859105A (en) * 1997-02-11 1999-01-12 Johnson Matthey, Inc. Organosilicon-containing compositions capable of rapid curing at low temperature
JPH0912892A (ja) * 1995-07-04 1997-01-14 Toray Dow Corning Silicone Co Ltd 現場成形ガスケット用シリコーンゴム組成物
JPH09111135A (ja) * 1995-10-23 1997-04-28 Mitsubishi Materials Corp 導電性ポリマー組成物
US5665274A (en) * 1995-12-22 1997-09-09 Hughes Aircraft Company Electrically conductive black silicone paint having spacecraft applications
TW392179B (en) * 1996-02-08 2000-06-01 Asahi Chemical Ind Anisotropic conductive composition
US5890915A (en) * 1996-05-17 1999-04-06 Minnesota Mining And Manufacturing Company Electrical and thermal conducting structure with resilient conducting paths
US5847929A (en) * 1996-06-28 1998-12-08 International Business Machines Corporation Attaching heat sinks directly to flip chips and ceramic chip carriers
JP3739533B2 (ja) * 1996-09-30 2006-01-25 東レ・ダウコーニング株式会社 液状シリコーンゴムベースの連続的製造方法
US5781412A (en) * 1996-11-22 1998-07-14 Parker-Hannifin Corporation Conductive cooling of a heat-generating electronic component using a cured-in-place, thermally-conductive interlayer having a filler of controlled particle size
JP2001503471A (ja) * 1997-02-07 2001-03-13 ロックタイト コーポレーション 伝導性樹脂組成物
US6884314B2 (en) * 1997-02-07 2005-04-26 Henkel Corporation Conducive, silicone-based compositions with improved initial adhesion reduced microvoiding
US5852092A (en) * 1997-02-11 1998-12-22 Johnson Matthey, Inc. Organosilicon-containing compositions having enhanced adhesive properties
US6013715A (en) * 1997-04-22 2000-01-11 Dow Corning Corporation Thermoplastic silicone elastomers
JPH1112470A (ja) * 1997-06-25 1999-01-19 Toray Dow Corning Silicone Co Ltd 高電圧電気絶縁部品用液状シリコーンゴム組成物
US6020424A (en) * 1997-06-30 2000-02-01 Ferro Corporation Screen printable thermally curing conductive gel
US6114413A (en) * 1997-07-10 2000-09-05 International Business Machines Corporation Thermally conducting materials and applications for microelectronic packaging
JPH1140224A (ja) * 1997-07-11 1999-02-12 Jsr Corp 異方導電性シート
US6096414A (en) * 1997-11-25 2000-08-01 Parker-Hannifin Corporation High dielectric strength thermal interface material
US6017587A (en) * 1998-07-09 2000-01-25 Dow Corning Corporation Electrically conductive silicone compositions
JP3948642B2 (ja) * 1998-08-21 2007-07-25 信越化学工業株式会社 熱伝導性グリース組成物及びそれを使用した半導体装置
US6271299B1 (en) * 1999-02-02 2001-08-07 Dow Corning Corporation Fire resistant sealant composition
US5989459A (en) * 1999-03-09 1999-11-23 Johnson Matthey, Inc. Compliant and crosslinkable thermal interface materials
US6238596B1 (en) * 1999-03-09 2001-05-29 Johnson Matthey Electronics, Inc. Compliant and crosslinkable thermal interface materials
JP3543663B2 (ja) * 1999-03-11 2004-07-14 信越化学工業株式会社 熱伝導性シリコーンゴム組成物及びその製造方法
US6391442B1 (en) * 1999-07-08 2002-05-21 Saint-Gobain Performance Plastics Corporation Phase change thermal interface material
US6706219B2 (en) * 1999-09-17 2004-03-16 Honeywell International Inc. Interface materials and methods of production and use thereof
US6605238B2 (en) * 1999-09-17 2003-08-12 Honeywell International Inc. Compliant and crosslinkable thermal interface materials
US6562931B1 (en) * 1999-10-29 2003-05-13 Alliedsignal Inc. Room temperature vulcanizable silicone compositions with improved adhesion to acrylic
US6451422B1 (en) * 1999-12-01 2002-09-17 Johnson Matthey, Inc. Thermal interface materials
US6339120B1 (en) * 2000-04-05 2002-01-15 The Bergquist Company Method of preparing thermally conductive compounds by liquid metal bridged particle clusters
US6534581B1 (en) * 2000-07-20 2003-03-18 Dow Corning Corporation Silicone composition and electrically conductive silicone adhesive formed therefrom
JP3791403B2 (ja) * 2000-12-04 2006-06-28 富士電機ホールディングス株式会社 鉛フリーハンダ対応無洗浄用フラックスおよびこれを含有するハンダ組成物
US6573328B2 (en) * 2001-01-03 2003-06-03 Loctite Corporation Low temperature, fast curing silicone compositions
US7242099B2 (en) * 2001-03-05 2007-07-10 Megica Corporation Chip package with multiple chips connected by bumps
US6469379B1 (en) * 2001-03-30 2002-10-22 Intel Corporation Chain extension for thermal materials
US7311967B2 (en) * 2001-10-18 2007-12-25 Intel Corporation Thermal interface material and electronic assembly having such a thermal interface material
US6791839B2 (en) * 2002-06-25 2004-09-14 Dow Corning Corporation Thermal interface materials and methods for their preparation and use
US6838372B2 (en) * 2002-09-25 2005-01-04 Cookson Electronics, Inc. Via interconnect forming process and electronic component product thereof
US6936644B2 (en) * 2002-10-16 2005-08-30 Cookson Electronics, Inc. Releasable microcapsule and adhesive curing system using the same
US6841867B2 (en) * 2002-12-30 2005-01-11 Intel Corporation Gel thermal interface materials comprising fillers having low melting point and electronic packages comprising these gel thermal interface materials
US7030483B2 (en) * 2003-06-30 2006-04-18 Intel Corporation Polymer solder hybrid interface material with improved solder filler particle size and microelectronic package application
US7550097B2 (en) * 2003-09-03 2009-06-23 Momentive Performance Materials, Inc. Thermal conductive material utilizing electrically conductive nanoparticles
US7312261B2 (en) * 2004-05-11 2007-12-25 International Business Machines Corporation Thermal interface adhesive and rework
US20060067852A1 (en) * 2004-09-29 2006-03-30 Daewoong Suh Low melting-point solders, articles made thereby, and processes of making same
US20070073008A1 (en) * 2005-09-28 2007-03-29 Cookson Singapore Pte, Ltd. Compositions effective to suppress void formation
KR101047701B1 (ko) * 2005-11-25 2011-07-08 히다치 가세고교 가부시끼가이샤 전자 부품용 액상 수지 조성물 및 전자 부품 장치
US20080023665A1 (en) * 2006-07-25 2008-01-31 Weiser Martin W Thermal interconnect and interface materials, methods of production and uses thereof
WO2008147825A2 (fr) * 2007-05-22 2008-12-04 Honeywell International Inc. Matériaux d'interconnexion et d'interface thermiques, procédés de leur production et de leur utilisation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644003A (en) * 1994-07-19 1997-07-01 Sumitomo Chemical Company, Ltd. Epoxy resin composition, process for producing the same and resin-sealed semiconductor device
US20040200879A1 (en) * 2001-05-24 2004-10-14 Fry's Metals, Inc. Thermal interface material and solder preforms
US20050087891A1 (en) * 2003-10-23 2005-04-28 Rumer Christopher L. No-flow underfill composition and method
US20070051773A1 (en) * 2005-09-02 2007-03-08 Ruchert Brian D Thermal interface materials, methods of preparation thereof and their applications

Also Published As

Publication number Publication date
US20110038124A1 (en) 2011-02-17
CN102066488A (zh) 2011-05-18
TW201002777A (en) 2010-01-16
WO2009131913A3 (fr) 2010-03-04

Similar Documents

Publication Publication Date Title
WO2009131913A2 (fr) Matériaux isolants thermiques pour interconnexions et interfaces, leurs procédés de production et leurs utilisations
US20100129648A1 (en) Electronic packaging and heat sink bonding enhancements, methods of production and uses thereof
US20080023665A1 (en) Thermal interconnect and interface materials, methods of production and uses thereof
US20080291634A1 (en) Thermal interconnect and interface materials, methods of production and uses thereof
TWI696681B (zh) 薄膜狀接著劑、使用薄膜狀接著劑之半導體封裝體之製造方法
US20070166554A1 (en) Thermal interconnect and interface systems, methods of production and uses thereof
US20100319898A1 (en) Thermal interconnect and integrated interface systems, methods of production and uses thereof
US20070164424A1 (en) Thermal interconnect and interface systems, methods of production and uses thereof
WO2004090938A9 (fr) Systemes d'interconnexion et d'interface thermiques, procedes de fabrication et utilisations
US20060040112A1 (en) Thermal interconnect and interface systems, methods of production and uses thereof
KR102487472B1 (ko) 고성능, 열 전도성 표면 실장 (다이 부착) 접착제
JP5191627B2 (ja) フィルム状接着剤およびこれを用いた半導体装置の製造方法
JP2004315688A (ja) 半導体用接着フィルム、半導体装置、及び半導体装置の製造方法。
JP5863323B2 (ja) 半導体装置、及び半導体装置の製造方法
TWI770338B (zh) 晶片狀電子零件
JP5912611B2 (ja) フィルム状接着剤
Wrosch et al. Sintered conductive adhesives for high temperature packaging

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980123038.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09735088

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 12988104

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09735088

Country of ref document: EP

Kind code of ref document: A2