WO2009131913A2 - Matériaux isolants thermiques pour interconnexions et interfaces, leurs procédés de production et leurs utilisations - Google Patents
Matériaux isolants thermiques pour interconnexions et interfaces, leurs procédés de production et leurs utilisations Download PDFInfo
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- WO2009131913A2 WO2009131913A2 PCT/US2009/041052 US2009041052W WO2009131913A2 WO 2009131913 A2 WO2009131913 A2 WO 2009131913A2 US 2009041052 W US2009041052 W US 2009041052W WO 2009131913 A2 WO2009131913 A2 WO 2009131913A2
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- 239000000463 material Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000000203 mixture Substances 0.000 claims abstract description 122
- 239000000945 filler Substances 0.000 claims abstract description 55
- 229910000679 solder Inorganic materials 0.000 claims abstract description 51
- 239000011159 matrix material Substances 0.000 claims abstract description 45
- 239000004593 Epoxy Substances 0.000 claims abstract description 30
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 23
- 230000004048 modification Effects 0.000 claims abstract description 22
- 238000012986 modification Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 55
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 30
- 229910052709 silver Inorganic materials 0.000 claims description 21
- 239000011231 conductive filler Substances 0.000 claims description 20
- 229910052738 indium Inorganic materials 0.000 claims description 20
- 239000002245 particle Substances 0.000 claims description 18
- 239000004332 silver Substances 0.000 claims description 17
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 16
- 229910052718 tin Inorganic materials 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 7
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 claims description 6
- 230000037361 pathway Effects 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- PSMFTUMUGZHOOU-UHFFFAOYSA-N [In].[Sn].[Bi] Chemical compound [In].[Sn].[Bi] PSMFTUMUGZHOOU-UHFFFAOYSA-N 0.000 claims description 4
- CPQQHACLFOIVHW-UHFFFAOYSA-N [Zn].[Ag].[Sn].[In] Chemical compound [Zn].[Ag].[Sn].[In] CPQQHACLFOIVHW-UHFFFAOYSA-N 0.000 claims description 4
- -1 silver metals Chemical class 0.000 claims description 4
- 239000004034 viscosity adjusting agent Substances 0.000 claims description 4
- 229920001730 Moisture cure polyurethane Polymers 0.000 claims description 3
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 2
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 2
- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical compound [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 claims description 2
- 150000002259 gallium compounds Chemical class 0.000 claims description 2
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 claims description 2
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract description 17
- 230000001070 adhesive effect Effects 0.000 abstract description 17
- 238000002844 melting Methods 0.000 abstract description 16
- 230000008018 melting Effects 0.000 abstract description 16
- 239000010410 layer Substances 0.000 description 34
- 238000011068 loading method Methods 0.000 description 30
- 238000001723 curing Methods 0.000 description 27
- 229920000642 polymer Polymers 0.000 description 21
- 239000010949 copper Substances 0.000 description 18
- 101710149792 Triosephosphate isomerase, chloroplastic Proteins 0.000 description 17
- 101710195516 Triosephosphate isomerase, glycosomal Proteins 0.000 description 17
- 238000012360 testing method Methods 0.000 description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 15
- 230000006870 function Effects 0.000 description 14
- HHRACYLRBOUBKM-UHFFFAOYSA-N 2-[(4-tert-butylphenoxy)methyl]oxirane Chemical compound C1=CC(C(C)(C)C)=CC=C1OCC1OC1 HHRACYLRBOUBKM-UHFFFAOYSA-N 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 239000002131 composite material Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 239000003085 diluting agent Substances 0.000 description 9
- 230000035882 stress Effects 0.000 description 9
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 230000002787 reinforcement Effects 0.000 description 7
- 238000005382 thermal cycling Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000001351 cycling effect Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000004519 grease Substances 0.000 description 5
- 230000013011 mating Effects 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000032683 aging Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 239000012782 phase change material Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000032798 delamination Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 239000000806 elastomer Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000006260 foam Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000012216 screening Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910000743 fusible alloy Inorganic materials 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002959 polymer blend Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000004017 vitrification Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- HTVITOHKHWFJKO-UHFFFAOYSA-N Bisphenol B Chemical compound C=1C=C(O)C=CC=1C(C)(CC)C1=CC=C(O)C=C1 HTVITOHKHWFJKO-UHFFFAOYSA-N 0.000 description 1
- 241001133184 Colletotrichum agaves Species 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- IUHFWCGCSVTMPG-UHFFFAOYSA-N [C].[C] Chemical class [C].[C] IUHFWCGCSVTMPG-UHFFFAOYSA-N 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002998 adhesive polymer Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000013020 final formulation Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 238000013178 mathematical model Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000004660 morphological change Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229940098458 powder spray Drugs 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
- C08L2666/54—Inorganic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29109—Indium [In] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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Definitions
- This disclosure relates to thermal interconnect systems, thermal interface systems and interface materials or compositions in electronic components, semiconductor components, other related layered materials applications and methods of making such materials and systems.
- thermal grease, or grease- like materials alone or on a carrier in such devices to transfer heat dissipated across physical interfaces and finally to the ambient atmosphere.
- thermal interface materials are thermal greases, phase change materials and elastomer tapes. Thermal greases and phase change materials often have lower thermal resistance than elastomer tapes because of the ability to be spread in very thin layers and provide intimate contact between adjacent surfaces.
- thermal impedance values range between 0.1-1.6 cm K/W since this is a strong function of the bondline thickness.
- thermal grease one drawback of thermal grease is that thermal performance deteriorates significantly after thermal cycling, such as from -65 0 C to 15O 0 C, or after power cycling when used in VLSI chips, for example.
- Common thermal greases use silicone oils as the carrier or matrix. It has also been found that the performance of these materials deteriorates when large deviations from surface planarity causes gaps to form between mating surfaces in electronic devices or when large gaps between mating surfaces are present for other reasons, such as manufacturing tolerances or the like. The performance and reliability of the electronic device in which they are used is adversely affected when the heat transferability of these materials breaks down. [0005] Thus, it could be helpful to provide materials that meet customer specifications while minimizing the size of the device and number of layers, are more compatible with other materials, particularly at interfaces between materials, and have high thermal conductivity and high mechanical compliance.
- TIM curable thermal interface material
- thermally transmissive electronic components including a first substrate; a second substrate; and a cured composition positioned between the first and second substrates.
- thermoly transmissive electronic component including mixing an epoxy polymeric matrix, a conductive filler, a solder material and a matrix material modification agent and forming a curable composition; positioning the composition between a first substrate and a second substrate; curing the polymeric matrix and applying heat to the matrix sufficient to at least partially melt at least a portion of the solder material such that the solder connects to particles in the filler to form a plurality of continuous heat transmissive pathways between the substrates and through the matrix.
- Fig. 1 is a schematic sectional view of before curing and after curing stages of two different electronic components.
- Fig. 2 is a graph showing linear dependence of thermal conductivity on filler loading and the non-linear dependence of the thermal impedance.
- Fig. 3 is a graph showing thermal impedance versus bond line thickness.
- Fig. 4 is a graph showing temperature dependence of thermal conductivity and thermal impedance of Example 2.
- Fig. 5 is a graph showing thermal impedance as a function of applied pressure during curing.
- Fig. 6a is a graph showing the viscosity of resulting pastes decreased linearly from
- Fig. 6b is a graph showing thermal conductivity as well as thermal impedance values for tBPGE-added TIMs at Time zero.
- Fig. 7 is a graph showing the viscosity of three tBPGE-added samples as a function of time to determine their pot life along with the plot of the non tBPGE-added sample.
- Fig. 8a is a graph showing a plot of the maximum cycle count before failure as a function of filler loading for tBPGE-added TIMs.
- Fig. 8b is a graph showing thermal impedance versus the number of thermal cycles.
- Figs. 9a and 9b are graphs showing thermal impedance at varying hours of HAST and high temperature aging respectively.
- Fig. 9c is a graph showing thermal impedance as a function of the number of reflow cycles.
- Fig. 10 is a graph showing vitrification as a function of temperature.
- Fig. 11 is a graph showing vitrification as a function of strain.
- a heat transfer path is created on the backside of the silicon die through a thermal interface material (TIMl), to a heat spreader, through a second thermal interface material (TIM2), to a heat sink, and eventually to the surrounding ambient atmosphere.
- TIMl thermal interface material
- TIM2 second thermal interface material
- the TIMl fills the gap between the die and the heat spreader to provide a continuous heat transfer path. Since TIMl is the first interface layer to the heat generating die in contrast to TIM2, which is the second interface layer between heat spreader and heat sink, it is typically the more important heat removal interface.
- the adhesive TIM provides adhesion to a variety of substrates and polar oxide layer of metal fillers via covalent bonding and reduces contact resistance. This property is especially advantageous when the material is subjected to harsh reliability testing such as thermal cycling and humidity testing. Delamination of the TIMs from the substrates due to poor adhesion increases interfacial thermal resistance, reducing heat conduction of the entire package. Thus, the performance of the adhesive TIMs largely depends on the adhesion strength to the die and heat spreader.
- the crosslinkable adhesive TIM being more stiff and rigid than soft material such as grease, is known to enhance phonon transfer between fillers and polymers, providing higher overall thermal conductivity.
- Our TIMs consider the following material criteria: 1) Thermal conductivity of >12 W/m-K and thermal impedance of ⁇ 0.05 cm -
- thermal interface material compositions exhibit low thermal resistance, high thermal performance, and maximum surface wetting for a wide variety of interface conditions and demands.
- the thermal interface materials can, for example, be used to attach heat generating electronic devices (the computer chip, silicon die and the like) to heat dissipating structures (heat spreaders, heat sinks and the like). Performance of the thermal interface materials is an important factor in ensuring adequate and effective heat transfer in such devices.
- Our compositions conform to adjacent surfaces (deform to fill surface contours and "wet" the surface), possess a low bulk thermal resistance and possess a low contact resistance. Bulk thermal resistance can be expressed as a function of the composition's thickness, thermal conductivity and area. Contact resistance is a measure of how well a composition is able to transfer heat across the interface which is largely determined by the amount and type of contact between the two materials. We, thus, provide compositions and methods to minimize contact resistance without a significant loss of performance from the materials.
- compositions comprise at least one matrix material, at least one conductive filler, at least one solder material and at least one material modification agent.
- Methods of forming these compositions comprise providing each of the at least one matrix material, at least one conductive filler, at least one solder material and at least one material modification agent, blending the components and curing the components pre- or post-application of the thermal interface material to a surface, substrate or component.
- the compositions comprise an uncured epoxy polymeric matrix (resin).
- the epoxy polymeric matrix provides a means of adhering substrates together and provides a mechanism to bring together other components that bring additional functionality to the composition.
- Each of the substrates can comprise a single layer such as a silicon wafer or can comprise one or more layers such as a gold-coated silicon wafer, for example.
- the epoxy polymeric matrix may be made from any number of epoxy-forming materials.
- an epoxy matrix can be formed from a mixture of bisphenol A and bisphenol B epoxy pre-polymer, a crosslmker such as MHHPA (methylhexahydrophthalic- anhydride), for example, and an epoxy monomer.
- Well known materials such as epoxy novalac resins may be used.
- epoxy novalac resins are EPON. Epoxy novalac resins such as those obtained from Hexion Specialty Chemicals are preferred.
- t-butylphenyl glycidyl ether exhibits good thermal performance because it has a phenyl group and has good chemical compatibility with the main epoxy pre-polymer, which also contains more phenyl groups.
- This mixture can include, for example: a) 60-70 vol% of metal loading to polymer (representing both conductive filler and solder material amounts), and 0-20 vol% of t-butylphenyl glycidyl ether.
- the composition comprises an epoxy polymeric matrix, a conductive filler, a solder material, and a matrix material modification agent, comprising about 1 vol% to about 25 vol%, about 1 vol% to about 50 vol%, about 20 vol% to about 50 vol%, or most preferably about 32 vol% to about 37 vol% of the polymeric matrix, based on the volume of the composition.
- the epoxy materials should be curable.
- the epoxy materials can be curable by various methods known in the art. Particularly preferred is heat curing, such as heat curing at about 120 0 C to about 170 0 C. Known curing times applicable to various epoxy materials can be employed such as for about 30 minutes to about 90 minutes.
- compositions may comprise at least one or a plurality of conductive fillers, such as, for example, tin, bismuth, indium, bismuth-tin alloy, silver metals, indium-tin alloy or combinations thereof that are dispersed in the epoxy polymer matrix. Strong adhesion between the composition and the substrate(s) (such as silicon) is enhanced by addition of a solder material/alloy such as indium-tin alloy in combination with the epoxy polymer matrix.
- conductive fillers such as, for example, tin, bismuth, indium, bismuth-tin alloy, silver metals, indium-tin alloy or combinations thereof that are dispersed in the epoxy polymer matrix.
- Indium for example, is an oxygen loving metal and believed to bond with the oxide of a silicon surface, generating indium oxide. Also, we found that epoxy polymers strongly adhere to metal oxides or inorganic oxide surfaces and are better adherers than other thermoset polymeric materials, such as silicone.
- compositions do not need fluxing agents which are usually used to remove oxides from the solder metal surface.
- compositions demonstrate improved thermal conductivity (thermal impedance) over fluxing agent/silicone -based thermal interface materials designed for metal surfaces.
- the conductive filler component may be dispersed in the composition and the filler should advantageously have a high thermal conductivity.
- a high conductivity filler should have a thermal conductivity of greater than about 15 and, in some instances, at least about 40 W/m-K.
- a conductive filler having a thermal conductivity of less than about 15 W/m-K is a low thermal conductivity filler. It is preferred to have a filler component of not less than about 80 W/m-K thermal conductivity.
- silver and copper fillers both have thermal conductivities of greater than 300 W/m-K and Bi42Sn solder has a conductivity of 19 W/m-K.
- Suitable filler materials include, but are not limited to silver, copper, aluminum, and alloys thereof; boron nitride, aluminum spheres, aluminum nitride, silver coated copper, silver coated aluminum, carbon fibers and carbon fibers coated with metals, metal alloys, conductive polymers or other composite materials. Combinations of boron nitride and silver or boron nitride and silver-copper alloy provide enhanced thermal conductivity. Silver and silver-coated copper in amounts of at least about 40 wt % are particularly useful. These materials may also comprise metal flakes or sintered metal flakes.
- the filler components may comprise large silver powders (20 ⁇ m) from TECHNIC, medium silver-coated copper (9 ⁇ m) from FERRO, small silver powders (3 ⁇ m) from METALOR, or combinations thereof.
- the composition comprises about 60 vol% to about 80 vol% of the conductive filler, based on the volume of the composition.
- the conductive filler component may comprise at least some particles having a diameter less than about 100 ⁇ m. The diameter of at least some of those particles may be less than about 80 ⁇ m or even about 40 ⁇ m.
- the conductive filler components also may comprise thermal reinforcement materials, such as screens, mesh, foam, cloth or combinations thereof.
- Thermal reinforcement materials may comprise highly conductive metals, ceramics, composites, or carbon materials, such as low coefficient of thermal expansion (CTE) materials or shape memory alloys.
- CTE coefficient of thermal expansion
- Metal or other highly conductive screen, mesh, cloth, or foam are used to enhance thermal conductivity, tailor CTE, adjust bondline thickness (BLT), and/or modify modulus and thermal fatigue life of the composition.
- thermal reinforcement materials can be treated in a number of ways to improve the performance of the composition.
- the reinforcement can be pressed or rolled to reduce the thickness and BLT while also increasing the area density of the reinforcement. This is particularly effective with Cu screen.
- the surface of the reinforcement can be treated to slow the formation of intermetallic compounds due to reaction with the solder component (e.g., plating a Cu mesh with Ni). It can also be treated to enhance wetting of the reinforcement by the solder component (e.g., Ni plating of carbon/graphite cloth or removal of oxides by methods such as exposure to forming gas (hydrogen in nitrogen or argon) at elevated temperature, wash with an acid, or coating with a flux).
- a flexible frame e.g., polymer, carbon/graphite, ceramic, metal, composite or other flexible frame
- Conductive filler components may be coated with by any suitable method or apparatus including, for example, coating the conductive filler components with solder in the molten state, by coating utilizing plasma spray, by plating or by combinations thereof.
- the compositions also comprise a solder material.
- the solder material may comprise, for example, any suitable solder material or metal, such as indium, silver, copper, aluminum, tin, bismuth, lead, gallium and alloys thereof. It is preferred that the solder material comprise indium or indium-based alloys.
- Solder materials that are dispersed in the composition may be any suitable solder material for a desired application.
- the composition comprises about 20 vol% to about 50 vol% of the solder material, based on the volume of the composition.
- Preferred solder materials include, but are not limited to, indium-tin alloys, indium-silver alloys, indium- bismuth alloys, tin-indium-bismuth, indium-tin-silver-zinc, indium-based alloys, tin-silver- copper alloys, tin-bismuth alloys, gallium compounds and gallium alloys.
- Especially preferred solder materials are those materials that comprise indium.
- the solder may or may not be doped with additional elements to promote wetting capabilities.
- solder materials are preferably low melting temperature solder materials wherein the solder materials typically melt at temperatures between about 100 0 C and about 170 0 C. Solder materials that have melting temperatures above about 200 0 C would be considered high melting temperature solder materials and would be less desirable as the melting temperature increases.
- the bismuth-tin alloys may comprise less than about 60 weight percent (wt %) of tin, based on the weight of the alloy.
- the bismuth-tin alloys may particularly comprise between about 30 and about 60 wt % of tin.
- the tin- indium-bismuth alloys may comprise less than about 80 wt % of tin, less than about 50 wt % of indium and less than about 15 wt % of bismuth.
- the tin-indium-bismuth alloys may also comprise between about 40-80 wt % of tin, between about 10-50 wt % of indium and about 2-15 wt % of bismuth.
- Indium- tin-silver- zinc alloys may comprise less than about 65 wt % of indium, less than about 65 wt % of tin, less than about 10 wt % of silver and less than about 10 wt % of zinc.
- the indium- tin-silver- zinc alloys may also comprise about 35-65 wt % of indium, about 35-65 wt % of tin, about 1- 10 wt % of silver and about 1 - 10 wt % of zinc.
- the at least one solder component comprises at least some components having a diameter less than about 40 ⁇ m.
- the average component diameter is less than about 40 ⁇ m.
- the material modification agent includes compounds or compositions that modify the composition to improve thermal performance, compatibility and/or physical quality of the resulting composition, such as by improving the stability of the polymer matrix, decreasing the viscosity of the material, increasing the surface contact or wettability between the composition and the surrounding surfaces, improve elasticity of the composition and resulting layers, tapes or pastes, results in higher thermal filler loading, tailors the curing capability of the composition for the application or a combination thereof.
- the at least one material modification agent may comprise at least one organic compound, at least one modified thermal filler profile, at least one stability additive, at least one viscosity agent and/or combinations thereof.
- the material modification agent may include viscosity modifying components that are designed to reduce the viscosity of the epoxy resin to allow a larger volume fraction of metal filler than could be accommodated in conventional applications.
- viscosity -modifying components include low molecular weight polymers and epoxy monomer, t-butylphenyl glycidyl ether (tBPGE) and allyl glycidyl ether (AGE) are particularly preferred.
- the composition comprises an epoxy polymeric matrix, a conductive filler, a solder material, and a matrix material modification agent, wherein the matrix material modification agent is a viscosity modifier, is a mixture of tBPGE and AGE and is about 0 vol% to about 20 vol% tBPGE and about 0 vol% to about 5 vol% AGE, based on the volume of the composition.
- the viscosity of the composition is thus preferably about 100,000 cps at 25°C or less.
- Another material modification agent includes at least one modified thermal filler.
- Modified thermal fillers include thermal fillers incorporated into the composition such that the particle size distribution achieves the highest possible volume fraction loading. For example, some of the particles may be larger in diameter, while the remaining particles are significantly smaller in diameter. The average diameter may be the same as a particle size profile that contains all medium sized particles, but by making this modification to the particle size distribution, a deep trough between the peaks in the particle size distribution is formed and higher filler loading is achieved than can be achieved by either a monomodal particle size distribution or one where the through in the particle size distribution is not very deep and the distribution is therefore more uniform.
- the thermal performance on various substrates surfaces such as silicon die to nickel plated heat spreader surfaces for our compositions preferably is as follows: a) thermal conductivity of greater than 12 W/m-K, b) thermal conductivity after highly accelerated stress test (HAST) of greater than 10, c) thermal conductivity after re flow of greater than 9, and/or d) thermal conductivity after 100 cycles of a thermal cycling of greater than 10.
- HAST highly accelerated stress test
- the composition thus demonstrate excellent thermal performance before and after reliability testing, as well as the initial thermal conductivity.
- the thermal performance on Au-Au (metalized die and spreader surfaces) for the compositions exhibits excellent reliability, passing both 1000 cycles of a thermal cycling and 96hrs of HAST without meaningful changes in thermal impedance after the test.
- the thermal interface materials may also have the following beneficial characteristics: a) stronger adhesion of the epoxy polymer toward the substrate(s), b) further improved adhesion by adding small amounts of solder such as indium-tin alloy, and c) lowered viscosity by using low viscous epoxy resin.
- solder such as indium-tin alloy
- Another advantage of the indium-tin alloy is that it provides for good lubricating behavior.
- compositions have several advantages directly related to use and component engineering, such as: a) filling small gaps on the order of 0.2 millimeters or less, b) efficiently dissipating heat in those small gaps as well as larger gaps, unlike most conventional solder materials, and c) can be easily incorporated into micro components, components used for satellites, and small electronic components.
- the compositions also have several advantages directly related to use and component engineering, such as: a) high bulk thermal conductivity, b) metallic bonds may be formed at joining surfaces, thereby lowering contact resistance and c) can be easily incorporated into micro components, components used for satellites and small electronic components.
- the composition can be provided as a dispensable paste to be applied by dispensing methods such as, for example, screen printing, stencil printing, automated dispensing and the like and then cured as desired. It can also be provided as a highly compliant, cured, elastomer film or sheet for pre-application on interface surfaces, such as heat sinks. It can further be provided and produced as a soft gel or liquid that can be applied to surfaces by any suitable dispensing method, such as screen-printing, ink jet printing or the like. The composition can be provided as a tape that can be applied directly to interface surfaces or electronic components. [0058] It can be useful to utilize stencil printing as a deposition method.
- the viscosity can be lowered by utilizing at least one of a) lowering the weight percentage of the metal loading to the polymer mixture, b) adding more weight percent of an epoxy monomer with a higher boiling point and/or c) a viscosity modifier.
- the subtle change in the metal loading to the polymer mixture results in a significant decrease in the viscosity of the mixture.
- the components can be mixed and a paste formed. The paste can then be deposited on a substrate such as a die by syringe, covered with a heat spreader and cured.
- compositions and related layers can be formed in any suitable thickness, depending on the needs of the electronic component or other use as long as the thermal interface component is able to sufficiently perform the task of dissipating some or all of the heat generated from the electronic component to which it is attached.
- Thicknesses may comprise ranges of about 0.030 - about 0.150 mm, preferably about 0.050 - about 0.100 mm. Thicknesses may also be within the wider range of about 0.010 - about 0.250 mm in some applications.
- This stress transfer can be minimized by increasing the bondline thickness of the composition, reducing the coefficient of thermal expansion of the heat spreader or changing the geometry of a heat spreader to minimize stress transfer.
- Increasing the bondline thickness generally increases the thermal resistance of the interface, but including a high conductivity mesh as part of a thicker composition can minimize this increase and even result in lower thermal resistance than for the composition alone.
- Examples of lower CTE materials for heat spreaders are AlSiC, CuSiC, copper- graphite composites, carbon-carbon composites, diamond, CuMoCu laminates and the like.
- Examples of geometric changes are adding a partial or through slot to the spreader to decrease spreader thickness and forming a truncated, square based, inverted pyramid shape to lower stress and stiffness by having the spreader cross-section be lower near the semiconductor die.
- the composition may be applied to a metal-based coating, layer and/or film.
- Metal-based coating layers may comprise any suitable metal that can be applied to the surface of the composition or surface/support material in a layer.
- the metal-based coating layer may comprise indium, such as indium metal, InBi alloy, InBiGd alloy and InAg alloy, for example, and can also include nickel and/or gold, among others.
- These metal-based coating layers are generally applied to a surface by any method capable of producing a substantially uniform layer with a minimum number of pores or voids and can further apply the layer with a relatively high deposition rate.
- Many suitable methods and apparatus are available to apply layers or ultra thin layers of this type, such as spot plating or pulsed plating. Pulsed plating (which is intermittent plating as opposed to direct current plating) can apply layers that are free or virtually free of pores and/or voids.
- the composition can be directly deposited onto at least one of the sides of a heat spreader component, for example, such as the bottom side, the top side or both. Such deposition can be directly onto the spreader or onto a layer on the spreader such as a gold layer, for example. On the other hand, the composition can be deposited onto a die. Such deposition can be direct onto a silicon wafer die or onto a layer on the die such as a gold layer, for example.
- the composition may be silk screened, stencil printed, screen printed or dispensed directly onto the heat spreader, die or heat generating device by methods such as jetting, thermal spray, liquid molding or powder spray, and also the common method of paste dispensing via a syringe tipped with a needle or a nozzle.
- a film of the composition may be deposited and combined with other methods of building adequate thermal interface material thickness, including direct attachment of a preform or silk screening of the composition.
- Methods of forming layered compositions include, but are not limited to: a) providing a heat spreader component, wherein the heat spreader component comprises a top surface, a bottom surface and at least one heat spreader material; b) providing at least one composition wherein the composition is directly deposited onto the bottom surface of the heat spreader component; c) depositing, applying or coating a metal-based coating, film or layer on at least part of the bottom surface of the heat spreader component; d) depositing, applying or coating the at least one composition onto at least part of at least one of the surfaces of the heat spreader component or heat generating device, and e) bringing the bottom of the heat spreader component with the composition into contact with the heat generating device, generally a semiconductor die.
- the composition layer may comprise a portion that is directly coupled to the heat spreader material and a portion that is exposed to the atmosphere, or covered by a protective layer or film that can be removed just prior to installation of the heat spreader component. Additional methods include, but are not limited to, providing at least one adhesive component and coupling the at least one adhesive component to at least part of at least one of the surfaces of the at least one heat spreader material and/or to or in at least part of the composition. At least one additional layer, including a substrate layer, can be coupled to the layered composition.
- compositions possessing a high thermal conductivity and a high mechanical compliance e.g., yield elastically or plastically on a local level when force is applied.
- Compositions possess a high thermal conductivity and good gap-filling properties When properly produced, the composition spans the distance between the mating surfaces of the heat producing device and the heat spreader component thereby allowing a continuous high conductivity path from one surface to the other surface.
- Suitable compositions comprise those materials that can conform to the mating surfaces, possess a low bulk thermal resistance and possess a low contact resistance.
- Pre-attached/pre-assembled thermal solutions and/or IC (interconnect) packages comprise one or more components of the compositions and at least one adhesive component.
- Adhesive component means any substance, inorganic or organic, natural or synthetic that is capable of bonding other substances together by surface attachment.
- the adhesive component may be added to or mixed with the composition, may actually be the composition or may be applied to, but not mixed with the composition.
- Representative examples of some contemplated adhesive components comprise double-sided tape from SONY, such as SONY T4411, 3M F9460PC or SONY T4100D203. The adhesive may serve the additional function of attaching the heat spreading component to the package substrate independent of the composition.
- compositions, along with layered compositions may then be applied to a substrate, another surface, or another layered material.
- the electronic component may comprise, for example, a composition, a substrate layer and an additional layer.
- Substrates may comprise any desirable substantially solid material.
- Particularly desirable substrate layers comprise non-metalized dies or surface, films, glass, ceramic, plastic, metal or coated metal, or composite material.
- the substrate may comprise a silicon or germanium arsenide die or wafer surface, a packaging surface such as found in a copper, silver, nickel or gold plated leadframe or heat spreader, a copper surface such as found in a circuit board or package interconnect trace, a via- wall or stiffener interface ("copper” includes considerations of bare copper and it's oxides), a polymer-based packaging or board interface such as found in a polyimide -based flex package, lead or other metal alloy solder ball surface, glass and polymers such as polyimide.
- the "substrate” may even be defined as another polymer material when considering cohesive interfaces.
- the substrate may comprise a material common in the packaging and circuit board industries such as, for example, silicon, copper, glass, and another polymer.
- the first substrate of a thermally transmissive electronic component may be a heat sink.
- Additional layers of material may be applied to the compositions or layered interface materials to build a layered component or printed circuit board.
- the additional layers may comprise materials similar to those already described herein, including metals, metal alloys, composite materials, polymers, monomers, organic compounds, inorganic compounds, organometallic compounds, resins, adhesives and optical wave-guide materials.
- Several methods and many compositions can be utilized to form pre-attached/pre- assembled thermal solution components.
- a method for forming a thermal solution/package and/or IC package includes: a) providing the thermal interface material or layered interface material; b) providing at least one surface or substrate; c) coupling the at least one composition and/or layered composition to form an adhesive unit; d) coupling the adhesive unit to the at least one surface or substrate to form a thermal package; e) optionally coupling an additional layer or component to the thermal package.
- Applications of the thermal solutions, IC packages, thermal interface components, layered interface materials and heat spreader components may comprise incorporating the materials and/or components into another layered material, an electronic component or a finished electronic product.
- Electronic components are generally thought to comprise any layered component that can be utilized in an electronic-based product.
- Electronic components may comprise circuit boards, chip packaging, separator sheets, dielectric components of circuit boards, printed- wiring boards, and other components of circuit boards, such as capacitors, inductors, and resistors.
- Fig. 1 it can be seen that two applications of the composition in conjunction with several different types of substrates is illustrated.
- the lefthand side shows a metallized substrate wherein the metal layers covering the respective substrates area coated with gold.
- the righthand side shows non-metallized substrates wherein one substrate is a nickel substrate and the other is a silicon substrate such as a silicon wafer.
- the top half of Fig. 1 shows the substrates (with or without layers) sandwiching an uncured epoxy resin matrix containing high conductivity filler as shown with the light particles and solder as shown with the dark particles.
- the matrix modification agent is not separately shown, but is mixed into the epoxy polymer matrix.
- Fig. 1 shows the resulting electronic component subsequent to curing.
- the polymer matrix has cured into a solid matrix and encompasses conductive pathways that are formed from the non-melted high conductivity filler material and melted solder that forms pathways between adjacent filler particles.
- the solder in some instances surrounds the filler particles and in others does not.
- continuous heat conductive pathways are formed between the opposed substrates and/or metallic layers associated therewith. This structures leads to a good balance of desirable properties. Examples Materials and Thermal Diffusivity Measurement [0075] Selected amounts of premixed conductive fillers were added to a mixture of crosslinkable resins and subjected to 15 min of high-shear mixing to obtain homogeneous pastes.
- Thermal diffusivity values were measured by a Netzsch flash diffusivity instrument (LFA 447 NanoFlashTM). The well-mixed pastes were applied to the top of the custom stainless steel stencil and a squeegee drawn across to push the material through the stencil openings and print on the metalized heat spreader (ca. 1.27 x 1.27 cm, 0.77 mm thickness).
- the die side metallization was applied by sputtering NiV/Au and heat spreader metallization by electroplating Ni/Au on the Cu substrate. The same substrate type was used for the thermal diffusivity measurements unless otherwise specified. A fixture was used to hold the substrate and maintain uniform positioning. The die (ca.
- the interface impedance is not expected to be spatially uniform. Because the measurement involves the sample as a whole, the impedance values showed must be regarded as averages over the total cross-sectional area. All samples were prepared in the same procedure unless otherwise specified.
- Thermal impedance is a more accurate measurement of performance than thermal conductivity alone since true performance of a TIM should depend on the quality of heat conduction through the TIMs and the quality of contact between the TIMs and the two mating surfaces.
- a plot of thermal impedance as a function of thickness for Example 1 is shown in Fig. 3.
- the effective thermal conductivity and thermal impedance is 14.0 W/m-K and 0.03 cm 2 -K/W at 50 micron, respectively using metalized die.
- the bulk thermal conductivity calculated from the line's slope showed ⁇ 15 W/m-K.
- Example 3 shows a bulk thermal conductivity, thermal impedance at 50 micron, and interface impedance of ⁇ 15 W/m-K, -0.05 cm 2 -K/W, and -0.02 cm 2 -K/W respectively. Comparing the results, we conclude that the bulk heat conduction performance is similar for the TIM regardless of the substrate surfaces, which is in marked contrast with the results previously obtained in analogue TIMs in which a different adhesive polymer is used. In that case, a 60% decrease in the thermal conductivity as well as thermal impedance was observed on the bare Si die compared to that on the metalized die. It is clear that Example 1 can be used on a variety of surfaces; however, our focus here will be directed to the application on the metalized die.
- Fig. 4 shows the temperature dependence of the thermal conductivity of Example 2.
- the thermal conductivity is found to not change with the temperature up to 150 0 C. This is expected since the microstructure of the bulk TIM as well as interface should not change in this temperature range.
- most of the computer processors operate at 80 - 120 0 C, thus Example 2 which maintains the higher thermal conductivity, 12 W/m-K, even at the operating temperature can ensure efficient heat transfer.
- a 25% decrease in thermal conductivity and associated increase in thermal impedance was observed.
- it is believed that part of the composite may become soft due to the melting of fusible fillers.
- the decrease in the thermal conductivity may be related to the thermal material degradation or inefficient phonon transfer due to loss of rigidity of the composite.
- Effect of Curing Conditions [0080] To enhance thermal interface properties, it is important to have proper curing conditions of TIM materials. We investigated the effect of applied pressure on the thermal impedance during curing and of curing temperature. The curing time is kept the same in both tests. Applying pressure on samples during curing can improve the TIM contact to the substrate surface and reduce the bond line thickness, thus reducing the thermal resistance.
- Fig. 5 shows the thermal impedance as a function of applied pressure during curing. As expected, thermal impedance decreases when the pressure increases, reaching a steady state after applying 24 psi.
- the drops may result from multiple effects on the material properties such as the morphological change, reduction of porosity, and densification of the bulk as well as the reduction of voids or air gaps at the interfaces.
- Table 1 shows the effect of curing temperature on the thermal conductivity of all three APS-a samples. We selected three different curing temperatures: 120 0 C, 45 min cure 120 0 C, 45 min cure, with a 160 0 C, 45 min postcure 160 0 C, 45 min cure. Table 1
- the viscosity of the paste with different filler loading was measured with Haake rheometer at 25 0 C at shear rate of 1/25 s using a 20 mm cone and plate geometry. It showed a linear dependence of the filler loading over the range we investigated, already approaching 132,000 cps even at filler loading of 63.6 vol%.
- the filler loading to obtain a viscosity of 100,000 cps, our target viscosity, is calculated to be 61.7 vol% at which the thermal conductivity is extrapolated to be ⁇ 8 W/m-K.
- the pot life was determined as time until a 10% increase in the viscosity from time zero when the paste is left under ambient conditions.
- the paste should be in one part formulation, not requiring any mixing prior to the dispensing as opposed to two part formulations.
- a Diluent A tBPGE
- the Diluent A functioned as a viscosity modifier as well as an end-capping and increased a pot life.
- the viscosity of the resulting paste is again largely dominated by filler loading over a range of the diluent we investigated.
- we decided to investigate the effect of the diluent amount at the same filler loading 64 vol%, +/-0.3%). As seen in Fig.
- Example 7 shows the viscosity of those three diluent-added samples as a function of time to determine their pot life along with the plot of the non diluent-added sample.
- Example 7 (similar to Example 1 but with 93.5% metal) at the similar metal loading.
- the pot life of the three diluent-added samples is significantly increased, indicated by a relatively modest increase in their viscosity over time, as opposed to a significant increase for non diluent-added sample, for the same filler loading.
- the viscosity, pot life, and the thermal performance of all samples with and without Diluent A were summarized in Table 2. The increase in pot life with increasing Diluent A amount is most probably due to the slowing of the polymer crosslinking reaction.
- HAST Highly Accelerated Stress Test
- TIMs were tested for HAST (85°C, 85% RH and 2 atm absolute pressure). If the material has significant amount of free volume in the bulk or is hygroscopic, then it would take up moisture and cause delamination from the substrates. Both TIMs showed a tight distribution with no degradation after 96 hours, indicating that they are stable under the moisture stress environment.
- thermal stress the samples were put in an over and heated at a temperature of 150 0 C for longer durations.
- Both TIMs showed no change in thermal impedance at the end of 600 hours, indicating the thermal stress induced at this temperature and duration is not an issue.
- the TIM can tolerate the high temperature of solder reflow, they ere subjected to 5 to 7 reflow cycles at a peak temperature of 260 0 C. Gradual degradation was observed, but this was within our limit after 3 reflow cycles. Delamination of the TIMs from the interfaces was not observed based on the SEM analysis. Overall, the thermal impedance of both TIM remained relatively constant throughout the various stress tests.
- Figure 10 shows that both the shear modulus and the complex shear modulus increase with temperature except for a dips just above 12O 0 C and 14O 0 C where the solders melt. They do not cross during this temperature sweep.
- Figure 11 shows the complex viscosity as a function of strain showing a monotonic decrease with increasing strain.
- Examples 1 - 6 show a good balance of properties, including low viscosity, high thermal conductivity, good reliability and good pot life. All of Examples 1 - 6 provide at least a minimal amount of balance between those characteristics. The preferred use of AGE and/or tBPGE demonstrates that balance. [0090] In Examples 1 and 2, AGE was used, but not tBPGE. Thus, those Examples provided a good balance. However, utilization of tBPGE instead of AGE provided even more enhanced results as indicated in Examples 4, 5 and 6. Example 3 shows a utilization of both AGE and tBPGE which also provides an excellent balance of thermal conductivity, reliability, viscosity and pot life.
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Abstract
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CN2009801230385A CN102066488A (zh) | 2008-04-21 | 2009-04-18 | 热互连和界面材料、它们的制造方法和用途 |
US12/988,104 US20110038124A1 (en) | 2008-04-21 | 2009-04-18 | Thermal interconnect and interface materials, methods of production and uses thereof |
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Also Published As
Publication number | Publication date |
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US20110038124A1 (en) | 2011-02-17 |
CN102066488A (zh) | 2011-05-18 |
TW201002777A (en) | 2010-01-16 |
WO2009131913A3 (fr) | 2010-03-04 |
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