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WO2009072406A1 - シリコンウェーハ洗浄方法およびその装置 - Google Patents

シリコンウェーハ洗浄方法およびその装置 Download PDF

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Publication number
WO2009072406A1
WO2009072406A1 PCT/JP2008/071198 JP2008071198W WO2009072406A1 WO 2009072406 A1 WO2009072406 A1 WO 2009072406A1 JP 2008071198 W JP2008071198 W JP 2008071198W WO 2009072406 A1 WO2009072406 A1 WO 2009072406A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning
component
silicon wafer
organic acid
wafer
Prior art date
Application number
PCT/JP2008/071198
Other languages
English (en)
French (fr)
Inventor
Shigeru Okuuchi
Kazushige Takaishi
Original Assignee
Sumco Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corporation filed Critical Sumco Corporation
Priority to JP2009544631A priority Critical patent/JP4992981B2/ja
Priority to KR1020107011489A priority patent/KR101106582B1/ko
Priority to EP08857296.1A priority patent/EP2224470B1/en
Priority to US12/746,201 priority patent/US7955440B2/en
Publication of WO2009072406A1 publication Critical patent/WO2009072406A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

　チャンバ内でウェーハ表面に水膜を形成後、水膜に、酸化ガスの酸化成分、有機酸ミストの有機酸成分とＨＦガスのＨＦ成分、有機酸ミスト、酸化ガスの酸化成分を順に供給する。結果、ＨＦ成分と有機酸成分でのウェーハ面の洗浄効果が得られ、ウェーハ面内での水膜中の洗浄成分の濃度を均一にできる。
PCT/JP2008/071198 2007-12-07 2008-11-21 シリコンウェーハ洗浄方法およびその装置 WO2009072406A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009544631A JP4992981B2 (ja) 2007-12-07 2008-11-21 シリコンウェーハ洗浄方法
KR1020107011489A KR101106582B1 (ko) 2007-12-07 2008-11-21 실리콘 웨이퍼 세정 방법 및 그 장치
EP08857296.1A EP2224470B1 (en) 2007-12-07 2008-11-21 Method for cleaning silicon wafer
US12/746,201 US7955440B2 (en) 2007-12-07 2008-11-21 Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007317621 2007-12-07
JP2007-317621 2007-12-07

Publications (1)

Publication Number Publication Date
WO2009072406A1 true WO2009072406A1 (ja) 2009-06-11

Family

ID=40717588

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071198 WO2009072406A1 (ja) 2007-12-07 2008-11-21 シリコンウェーハ洗浄方法およびその装置

Country Status (5)

Country Link
US (1) US7955440B2 (ja)
EP (1) EP2224470B1 (ja)
JP (1) JP4992981B2 (ja)
KR (1) KR101106582B1 (ja)
WO (1) WO2009072406A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8529105B2 (en) 2008-07-10 2013-09-10 Koninklijke Philips N.V. Remote cooling by combining heat pipe and resonator for synthetic jet cooling
US8664092B2 (en) 2009-06-26 2014-03-04 Sumco Corporation Method for cleaning silicon wafer, and method for producing epitaxial wafer using the cleaning method
JPWO2014034924A1 (ja) * 2012-09-03 2016-08-08 学校法人早稲田大学 スラッジ回収方法及び粉粒体

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120160272A1 (en) * 2010-12-23 2012-06-28 United Microelectronics Corp. Cleaning method of semiconductor process
TWI669760B (zh) * 2011-11-30 2019-08-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6718714B2 (ja) * 2016-03-25 2020-07-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN109273560A (zh) * 2018-09-29 2019-01-25 苏州昊建自动化系统有限公司 一种用于硅电池的二氧化硅膜离线生成系统
CN109648451B (zh) * 2018-12-29 2020-12-01 徐州鑫晶半导体科技有限公司 硅晶圆的最终抛光方法和最终抛光装置
TW202147481A (zh) * 2020-01-23 2021-12-16 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及藥液

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0380538A (ja) * 1989-05-06 1991-04-05 Dainippon Screen Mfg Co Ltd 基板の表面処理方法
JPH09293701A (ja) 1995-12-28 1997-11-11 Texas Instr Inc <Ti> 半導体を製造する方法
JP2002299300A (ja) * 2001-03-30 2002-10-11 Kaijo Corp 基板処理方法

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US5181985A (en) * 1988-06-01 1993-01-26 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the wet-chemical surface treatment of semiconductor wafers
KR930007098A (ko) * 1991-09-25 1993-04-22 정용문 매우 작은 주파수 간격을 갖는 주파수 합성기
US5922624A (en) * 1993-05-13 1999-07-13 Imec Vzw Method for semiconductor processing using mixtures of HF and carboxylic acid
JPH0969509A (ja) * 1995-09-01 1997-03-11 Matsushita Electron Corp 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法
JP3324455B2 (ja) * 1997-07-18 2002-09-17 信越半導体株式会社 珪素系半導体基板の清浄化方法
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
JP3454302B2 (ja) * 1998-07-31 2003-10-06 三菱住友シリコン株式会社 半導体基板の洗浄方法
JP3239998B2 (ja) * 1998-08-28 2001-12-17 三菱マテリアルシリコン株式会社 半導体基板の洗浄方法
JP2000117208A (ja) * 1998-10-13 2000-04-25 Kurita Water Ind Ltd 電子材料の洗浄方法
EP1481741B1 (en) * 1999-07-23 2010-10-20 Semitool, Inc. Process and system for treating a workpiece such as a semiconductor wafer
TW466558B (en) * 1999-09-30 2001-12-01 Purex Co Ltd Method of removing contamination adhered to surfaces and apparatus used therefor
US6743301B2 (en) * 1999-12-24 2004-06-01 mFSI Ltd. Substrate treatment process and apparatus
US7681581B2 (en) * 2005-04-01 2010-03-23 Fsi International, Inc. Compact duct system incorporating moveable and nestable baffles for use in tools used to process microelectronic workpieces with one or more treatment fluids

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0380538A (ja) * 1989-05-06 1991-04-05 Dainippon Screen Mfg Co Ltd 基板の表面処理方法
JPH09293701A (ja) 1995-12-28 1997-11-11 Texas Instr Inc <Ti> 半導体を製造する方法
JP2002299300A (ja) * 2001-03-30 2002-10-11 Kaijo Corp 基板処理方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2224470A4 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8529105B2 (en) 2008-07-10 2013-09-10 Koninklijke Philips N.V. Remote cooling by combining heat pipe and resonator for synthetic jet cooling
US8664092B2 (en) 2009-06-26 2014-03-04 Sumco Corporation Method for cleaning silicon wafer, and method for producing epitaxial wafer using the cleaning method
KR101377240B1 (ko) * 2009-06-26 2014-03-20 가부시키가이샤 사무코 실리콘 웨이퍼의 세정 방법 및, 그 세정 방법을 이용한 에피택셜 웨이퍼의 제조 방법
JPWO2014034924A1 (ja) * 2012-09-03 2016-08-08 学校法人早稲田大学 スラッジ回収方法及び粉粒体

Also Published As

Publication number Publication date
KR101106582B1 (ko) 2012-01-19
KR20100086004A (ko) 2010-07-29
US20100252070A1 (en) 2010-10-07
EP2224470B1 (en) 2016-03-23
JPWO2009072406A1 (ja) 2011-04-21
JP4992981B2 (ja) 2012-08-08
EP2224470A1 (en) 2010-09-01
US7955440B2 (en) 2011-06-07
EP2224470A4 (en) 2012-04-18

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