[go: up one dir, main page]

WO2009069582A1 - Ｃｉｓ系太陽電池の積層構造、ｃｉｓ系薄膜太陽電池の集積構造及び製造方法 - Google Patents

Ｃｉｓ系太陽電池の積層構造、ｃｉｓ系薄膜太陽電池の集積構造及び製造方法 Download PDF

Info

Publication number
WO2009069582A1
WO2009069582A1 PCT/JP2008/071318 JP2008071318W WO2009069582A1 WO 2009069582 A1 WO2009069582 A1 WO 2009069582A1 JP 2008071318 W JP2008071318 W JP 2008071318W WO 2009069582 A1 WO2009069582 A1 WO 2009069582A1
Authority
WO
WIPO (PCT)
Prior art keywords
cis
family
solar cell
thin
film solar
Prior art date
Application number
PCT/JP2008/071318
Other languages
English (en)
French (fr)
Inventor
Hideki Hakuma
Katsuya Tabuchi
Yosuke Fujiwara
Katsumi Kushiya
Original Assignee
Showa Shell Sekiyu K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Shell Sekiyu K.K. filed Critical Showa Shell Sekiyu K.K.
Priority to DE112008003144T priority Critical patent/DE112008003144T5/de
Priority to US12/743,686 priority patent/US8691619B2/en
Publication of WO2009069582A1 publication Critical patent/WO2009069582A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

【課題】本発明は、ＣＩＳ系薄膜太陽電池の高抵抗バッファ層を、一連の製造ラインで効率的に生産可能で、廃液等の処理も不要な、生産効率の高いＣＩＳ系薄膜太陽電池の積層構造、集積構造及びその製造方法を得ることを課題とする。 【解決手段】裏面電極、ｐ型ＣＩＳ系光吸収層、高抵抗バッファ層、ｎ型透明導電膜の順に積層されたＣＩＳ系薄膜太陽電池において、高抵抗バッファ層およびｎ型透明導電膜は酸化亜鉛系薄膜からなり、バッファ層は、ｐ型ＣＩＳ系光吸収層と直接接しており、バッファ層の抵抗率は５００Ω・ｃｍ以上とした。
PCT/JP2008/071318 2007-11-30 2008-11-25 Ｃｉｓ系太陽電池の積層構造、ｃｉｓ系薄膜太陽電池の集積構造及び製造方法 WO2009069582A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112008003144T DE112008003144T5 (de) 2007-11-30 2008-11-25 Schichtstruktur von CIS Solarzelle, integrierte Struktur von CIS Dünnschichtsolarzelle sowie deren Herstellungsverfahren
US12/743,686 US8691619B2 (en) 2007-11-30 2008-11-25 Laminated structure for CIS based solar cell, and integrated structure and manufacturing method for CIS based thin-film solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-311540 2007-11-30
JP2007311540A JP2009135337A (ja) 2007-11-30 2007-11-30 Ｃｉｓ系太陽電池の積層構造、ｃｉｓ系薄膜太陽電池の集積構造及び製造方法

Publications (1)

Publication Number Publication Date
WO2009069582A1 true WO2009069582A1 (ja) 2009-06-04

Family

ID=40678477

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071318 WO2009069582A1 (ja) 2007-11-30 2008-11-25 Ｃｉｓ系太陽電池の積層構造、ｃｉｓ系薄膜太陽電池の集積構造及び製造方法

Country Status (4)

Country Link
US (1) US8691619B2 (ja)
JP (1) JP2009135337A (ja)
DE (1) DE112008003144T5 (ja)
WO (1) WO2009069582A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012153639A1 (ja) * 2011-05-06 2012-11-15 株式会社 東芝 光電変換素子および太陽電池
JP2012532446A (ja) * 2009-06-30 2012-12-13 エルジー イノテック カンパニー リミテッド 太陽電池及びその製造方法
US20130112235A1 (en) * 2010-07-28 2013-05-09 Kyocera Corporation Photoelectric conversion device, method of manufacturing photoelectric conversion device, and photoelectric conversion module
WO2013073149A1 (ja) * 2011-11-16 2013-05-23 株式会社 東芝 光電変換素子及び太陽電池
JP2013106012A (ja) * 2011-11-16 2013-05-30 Toshiba Corp 光電変換素子及び太陽電池
JP2014072433A (ja) * 2012-09-28 2014-04-21 Kyocera Corp 光電変換装置の製造方法

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8017860B2 (en) 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
US9105776B2 (en) 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
US8287942B1 (en) 2007-09-28 2012-10-16 Stion Corporation Method for manufacture of semiconductor bearing thin film material
US8759671B2 (en) 2007-09-28 2014-06-24 Stion Corporation Thin film metal oxide bearing semiconductor material for single junction solar cell devices
US7998762B1 (en) 2007-11-14 2011-08-16 Stion Corporation Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration
US8772078B1 (en) 2008-03-03 2014-07-08 Stion Corporation Method and system for laser separation for exclusion region of multi-junction photovoltaic materials
JP4904311B2 (ja) * 2008-04-28 2012-03-28 株式会社カネカ 薄膜光電変換装置用透明導電膜付き基板の製造方法
US8642138B2 (en) 2008-06-11 2014-02-04 Stion Corporation Processing method for cleaning sulfur entities of contact regions
US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
US9087943B2 (en) 2008-06-25 2015-07-21 Stion Corporation High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
US7855089B2 (en) 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
US8394662B1 (en) 2008-09-29 2013-03-12 Stion Corporation Chloride species surface treatment of thin film photovoltaic cell and manufacturing method
US8026122B1 (en) 2008-09-29 2011-09-27 Stion Corporation Metal species surface treatment of thin film photovoltaic cell and manufacturing method
US8008110B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method
US8501521B1 (en) 2008-09-29 2013-08-06 Stion Corporation Copper species surface treatment of thin film photovoltaic cell and manufacturing method
US8476104B1 (en) 2008-09-29 2013-07-02 Stion Corporation Sodium species surface treatment of thin film photovoltaic cell and manufacturing method
US8236597B1 (en) 2008-09-29 2012-08-07 Stion Corporation Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
US8008112B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
US7947524B2 (en) 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US7863074B2 (en) 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
US8383450B2 (en) 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US7960204B2 (en) * 2008-09-30 2011-06-14 Stion Corporation Method and structure for adhesion of absorber material for thin film photovoltaic cell
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
US7910399B1 (en) 2008-09-30 2011-03-22 Stion Corporation Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
US8741689B2 (en) 2008-10-01 2014-06-03 Stion Corporation Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials
US20110018103A1 (en) 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8435826B1 (en) 2008-10-06 2013-05-07 Stion Corporation Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8168463B2 (en) 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
US8344243B2 (en) 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
KR101091258B1 (ko) 2009-06-30 2011-12-07 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
KR101610379B1 (ko) * 2009-09-30 2016-04-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101231364B1 (ko) * 2009-10-01 2013-02-07 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US8809096B1 (en) 2009-10-22 2014-08-19 Stion Corporation Bell jar extraction tool method and apparatus for thin film photovoltaic materials
US8859880B2 (en) 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
US8263494B2 (en) 2010-01-25 2012-09-11 Stion Corporation Method for improved patterning accuracy for thin film photovoltaic panels
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
JP5642005B2 (ja) * 2010-08-31 2014-12-17 京セラ株式会社 光電変換装置とその製造方法および光電変換モジュ−ル
KR101262455B1 (ko) * 2010-09-10 2013-05-08 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
US8628997B2 (en) 2010-10-01 2014-01-14 Stion Corporation Method and device for cadmium-free solar cells
US8514620B2 (en) * 2010-11-29 2013-08-20 Micron Technology, Inc. Memory devices having select gates with P type bodies, memory strings having separate source lines and methods
US8728200B1 (en) 2011-01-14 2014-05-20 Stion Corporation Method and system for recycling processing gas for selenization of thin film photovoltaic materials
US8998606B2 (en) 2011-01-14 2015-04-07 Stion Corporation Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices
US20120210936A1 (en) * 2011-02-21 2012-08-23 Ji Fu Machinery & Equipment Inc. Systems and methods for mutli-chamber photovoltaic module processing
KR101262573B1 (ko) * 2011-07-29 2013-05-08 엘지이노텍 주식회사 태양전지 및 그의 제조방법
KR101273093B1 (ko) * 2011-07-29 2013-06-13 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US8436445B2 (en) 2011-08-15 2013-05-07 Stion Corporation Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices
WO2013106439A1 (en) * 2012-01-13 2013-07-18 Applied Materials, Inc. High work-function buffer layers for silicon-based photovoltaic devices
DE102012204676B4 (de) 2012-03-23 2019-02-21 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Chalkopyrit-Dünnschicht-Solarzelle mit Zn(S,O)-Pufferschicht und dazugehöriges Herstellungsverfahren
JP5815848B2 (ja) * 2012-04-17 2015-11-17 京セラ株式会社 光電変換装置の製造方法
KR101173429B1 (ko) 2012-04-19 2012-08-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US9130113B2 (en) 2012-12-14 2015-09-08 Tsmc Solar Ltd. Method and apparatus for resistivity and transmittance optimization in TCO solar cell films
CN103595343B (zh) * 2013-05-14 2015-09-16 横店集团东磁股份有限公司 一种防眩光太阳能电池组件及其制备工艺
US9105799B2 (en) * 2013-06-10 2015-08-11 Tsmc Solar Ltd. Apparatus and method for producing solar cells using light treatment
CN103915519B (zh) * 2014-04-03 2016-03-02 福耀玻璃工业集团股份有限公司 一种太阳能夹层玻璃及其制造方法
US9520530B2 (en) * 2014-10-03 2016-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Solar cell having doped buffer layer and method of fabricating the solar cell
JP6861480B2 (ja) * 2016-06-30 2021-04-21 ソーラーフロンティア株式会社 光電変換モジュールの製造方法
JP7058460B2 (ja) * 2016-06-30 2022-04-22 ソーラーフロンティア株式会社 光電変換モジュール

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS628578A (ja) * 1985-06-04 1987-01-16 シーメンス　ソーラー　インダストリーズ，エル．ピー． 薄膜太陽電池モジュール
JPH06209116A (ja) * 1985-06-04 1994-07-26 Siemens Solar Ind Lp 薄膜光起電力デバイスの製造方法
JPH08330614A (ja) * 1995-05-29 1996-12-13 Showa Shell Sekiyu Kk 薄膜太陽電池および該薄膜太陽電池の製造方法
JP2004047916A (ja) * 2002-07-12 2004-02-12 Honda Motor Co Ltd 化合物薄膜太陽電池およびその製造方法
JP2005228975A (ja) * 2004-02-13 2005-08-25 Matsushita Electric Ind Co Ltd 太陽電池
JP2006525671A (ja) * 2003-05-08 2006-11-09 ソリブロ エイビー 薄膜太陽電池
JP2006332440A (ja) * 2005-05-27 2006-12-07 Showa Shell Sekiyu Kk Ｃｉｓ系薄膜太陽電池の高抵抗バッファ層・窓層（透明導電膜）連続製膜方法及び製膜装置
JP2007138300A (ja) * 2005-11-21 2007-06-07 Air Products & Chemicals Inc 低温で酸化亜鉛を堆積させる方法およびそれにより形成される生成物
JP2007201304A (ja) * 2006-01-30 2007-08-09 Honda Motor Co Ltd 太陽電池およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611091A (en) * 1984-12-06 1986-09-09 Atlantic Richfield Company CuInSe2 thin film solar cell with thin CdS and transparent window layer
JPH03249342A (ja) 1990-02-28 1991-11-07 Mitsubishi Motors Corp 混合燃料エンジン用燃料供給装置
JP3792281B2 (ja) * 1995-01-09 2006-07-05 株式会社半導体エネルギー研究所 太陽電池
JP3249407B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池
JP4977478B2 (ja) * 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7601558B2 (en) * 2006-10-24 2009-10-13 Applied Materials, Inc. Transparent zinc oxide electrode having a graded oxygen content

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS628578A (ja) * 1985-06-04 1987-01-16 シーメンス　ソーラー　インダストリーズ，エル．ピー． 薄膜太陽電池モジュール
JPH06209116A (ja) * 1985-06-04 1994-07-26 Siemens Solar Ind Lp 薄膜光起電力デバイスの製造方法
JPH08330614A (ja) * 1995-05-29 1996-12-13 Showa Shell Sekiyu Kk 薄膜太陽電池および該薄膜太陽電池の製造方法
JP2004047916A (ja) * 2002-07-12 2004-02-12 Honda Motor Co Ltd 化合物薄膜太陽電池およびその製造方法
JP2006525671A (ja) * 2003-05-08 2006-11-09 ソリブロ エイビー 薄膜太陽電池
JP2005228975A (ja) * 2004-02-13 2005-08-25 Matsushita Electric Ind Co Ltd 太陽電池
JP2006332440A (ja) * 2005-05-27 2006-12-07 Showa Shell Sekiyu Kk Ｃｉｓ系薄膜太陽電池の高抵抗バッファ層・窓層（透明導電膜）連続製膜方法及び製膜装置
JP2007138300A (ja) * 2005-11-21 2007-06-07 Air Products & Chemicals Inc 低温で酸化亜鉛を堆積させる方法およびそれにより形成される生成物
JP2007201304A (ja) * 2006-01-30 2007-08-09 Honda Motor Co Ltd 太陽電池およびその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012532446A (ja) * 2009-06-30 2012-12-13 エルジー イノテック カンパニー リミテッド 太陽電池及びその製造方法
US20130112235A1 (en) * 2010-07-28 2013-05-09 Kyocera Corporation Photoelectric conversion device, method of manufacturing photoelectric conversion device, and photoelectric conversion module
WO2012153639A1 (ja) * 2011-05-06 2012-11-15 株式会社 東芝 光電変換素子および太陽電池
JP2012235019A (ja) * 2011-05-06 2012-11-29 Toshiba Corp 光電変換素子および太陽電池
CN103503160A (zh) * 2011-05-06 2014-01-08 株式会社东芝 光电转换元件及太阳能电池
CN103503160B (zh) * 2011-05-06 2016-07-27 株式会社东芝 光电转换元件及太阳能电池
WO2013073149A1 (ja) * 2011-11-16 2013-05-23 株式会社 東芝 光電変換素子及び太陽電池
JP2013106012A (ja) * 2011-11-16 2013-05-30 Toshiba Corp 光電変換素子及び太陽電池
JP2013106013A (ja) * 2011-11-16 2013-05-30 Toshiba Corp 光電変換素子及び太陽電池
JP2014072433A (ja) * 2012-09-28 2014-04-21 Kyocera Corp 光電変換装置の製造方法

Also Published As

Publication number Publication date
US20100267190A1 (en) 2010-10-21
DE112008003144T5 (de) 2010-10-14
US8691619B2 (en) 2014-04-08
JP2009135337A (ja) 2009-06-18

Similar Documents

Publication Publication Date Title
WO2009069582A1 (ja) Ｃｉｓ系太陽電池の積層構造、ｃｉｓ系薄膜太陽電池の集積構造及び製造方法
GB2452434A (en) Manufactue of CDTE photovoltaic cells using MOCVD
EP1968121A3 (en) Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell
WO2008149835A1 (ja) 集積型薄膜太陽電池とその製造方法
EP2075850A3 (en) Photoelectric conversion device and manufacturing method thereof
WO2009097627A3 (en) Thin-film photovoltaic devices and related manufacturing methods
FR2932009B1 (fr) Cellule photovoltaique et substrat de cellule photovoltaique
EP1798778A3 (en) Integrated thin-film solar cell and method of manufacturing the same
WO2004112161A3 (de) Tandemsolarzelle mit einer gemeinsamen organischen elektrode
WO2007065039A3 (en) Nanocrystal solar cells processed from solution
WO2008051275A3 (en) Monolithic integration nonplanar solar cells
EP2128904A3 (en) Tandem thin-film silicon solar cell and method for manufacturing the same
EP1981092A3 (en) Method for manufacturing single-crystal silicon solar cell and single-crystal silicon solar
EP1798779A3 (en) See-through-type integrated thin-film solar cell, method of manufacturing the same and method of electrically series connecting unit cells thereof
EP1553637A3 (en) Photovoltaic device
WO2009007375A3 (de) Dünnschichtsolarzellen-modul und verfahren zu dessen herstellung
EP2669952A8 (en) Photovoltaic device and method of manufacturing same
WO2011046664A3 (en) A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
EP2107614A3 (en) Thin-film photovoltaic cell, thin-film photovoltaic module and method of manufacturing thin-film photovoltaic cell
EP1921682A3 (en) Method for producing single crystal silicon solar cell and single crystal silicon solar cell
WO2011037374A3 (en) Solar cell module and method of manufacturing the same
WO2010062957A3 (en) Semi-transparent thin-film photovoltaic modules and methods of manufacture
EP2403000A3 (en) Metallic gridlines as front contacts of a cadmium telluride based thin film photovoltaic device
ATE492044T1 (de) Mehrschichtiger körper für eine farbstoffsensibilisierte solarzelle, elektrode für eine farbstoffsensibilisierte solarzelle und herstellungsverfahren dafür
WO2011106236A3 (en) Nanoscale high-aspect-ratio metallic structure and method of manufacturing same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08853757

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12743686

Country of ref document: US

RET De translation (de og part 6b)

Ref document number: 112008003144

Country of ref document: DE

Date of ref document: 20101014

Kind code of ref document: P

122 Ep: pct application non-entry in european phase

Ref document number: 08853757

Country of ref document: EP

Kind code of ref document: A1