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WO2009062397A1 - Inhibiteur de corrosion pour substrat métallique d'une puce à semi-conducteurs et son procédé d'utilisation - Google Patents

Inhibiteur de corrosion pour substrat métallique d'une puce à semi-conducteurs et son procédé d'utilisation Download PDF

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Publication number
WO2009062397A1
WO2009062397A1 PCT/CN2008/001829 CN2008001829W WO2009062397A1 WO 2009062397 A1 WO2009062397 A1 WO 2009062397A1 CN 2008001829 W CN2008001829 W CN 2008001829W WO 2009062397 A1 WO2009062397 A1 WO 2009062397A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor wafer
copolymer
monomer
metal substrate
corrosion protection
Prior art date
Application number
PCT/CN2008/001829
Other languages
English (en)
Chinese (zh)
Inventor
Bing Liu
Libbert Hongxiu Peng
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd filed Critical Anji Microelectronics (Shanghai) Co., Ltd
Priority to CN2008801148297A priority Critical patent/CN101842747B/zh
Publication of WO2009062397A1 publication Critical patent/WO2009062397A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
    • C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/173—Macromolecular compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the invention relates to a cleaning liquid in a semiconductor manufacturing cleaning process and a using method thereof, in particular to a semiconductor wafer metal substrate corrosion protection liquid and a using method thereof.
  • the application, exposure and imaging of the photoresist layer is a necessary process step for the pattern fabrication of the components.
  • the residue of the photoresist layer material needs to be completely removed before the next process step (i.e., after coating, imaging, ion implantation, and etching of the photoresist layer).
  • Ion bombardment in the doping step hardens the photoresist layer polymer, thus making the photoresist layer less soluble and more difficult to remove.
  • this layer of photoresist film has been removed using a two-step process (dry ashing and wet etching).
  • the first step uses dry ashing to remove most of the photoresist layer (PR).
  • the second step utilizes the corrosion inhibitor composition wet etch/clean process to remove the remaining photoresist layer.
  • the specific steps are typically rinse cleaning/rinsing/deionized water rinsing. In this process, only residual polymer photoresist layers and inorganic materials can be removed, and the damaged metal layer (such as aluminum layer) cannot be attacked.
  • the more used cleaning liquid is a hydroxylamine-containing cleaning liquid and a fluoride-containing cleaning liquid.
  • cleaning solution which contains neither hydroxylamine nor fluorine.
  • the hydroxylamine cleaning solution is often etched with a solvent after it has been rinsed in water due to its high rate of corrosion to metallic aluminum during rinsing in water.
  • the solvents used were mainly isopropanol and N-methylpyrrolidone.
  • the former has been gradually eliminated in some semiconductor manufacturing companies due to its low flash point and volatility.
  • the latter has been used in many semiconductor manufacturing companies due to its high flash point and low volatilization.
  • the technical problem to be solved by the present invention is to solve the problem of metal corrosion in the wet cleaning and rinsing step, and to provide a semiconductor wafer metal substrate having a low metal corrosion rate and being environmentally friendly, inexpensive, and easy to use. Corrosion protection liquid and its use method.
  • the semiconductor wafer metal substrate corrosion protection liquid of the present invention contains: a carboxyl group-containing polymer, a pigment-containing affinity group-containing polymer, and water.
  • the metal substrate refers to, in particular, an aluminum material, such as an aluminum alloy such as a standard aluminum, an aluminum silicon copper alloy or an aluminum copper alloy applied to a semiconductor process.
  • an aluminum material such as an aluminum alloy such as a standard aluminum, an aluminum silicon copper alloy or an aluminum copper alloy applied to a semiconductor process.
  • the carboxyl group-containing polymer is preferably one or more selected from the group consisting of a carboxyl group-containing homopolymer, a carboxyl group-containing homopolymer salt, a carboxyl group-containing copolymer, and a carboxyl group-containing copolymer salt. .
  • carboxyl group-containing homopolymer is preferably one or more of polymaleic anhydride (HPMA), polyacrylic acid (PAA) and polymethacrylic acid, more preferably polymaleic anhydride and / or polyacrylic acid.
  • HPMA polymaleic anhydride
  • PAA polyacrylic acid
  • PAA polymethacrylic acid
  • the carboxyl group-containing copolymer is preferably a copolymer of a carboxyl group-containing monomer (such as a copolymer of acrylic acid and maleic acid and/or a copolymer of methacrylic acid and maleic acid) and/or ethylene.
  • a carboxyl group-containing monomer such as a copolymer of acrylic acid and maleic acid and/or a copolymer of methacrylic acid and maleic acid
  • a copolymer of a base monomer and a carboxyl group-containing monomer such as a copolymer of styrene and acrylic acid, a copolymer of styrene and maleic acid, a copolymer of acrylonitrile and maleic acid, a copolymer of ethylene and acrylic acid, acrylonitrile
  • Copolymer with acrylic acid, copolymer of styrene and methacrylic acid, copolymer of ethylene and methacrylic acid, and one or more of copolymers of acrylonitrile and methacrylic acid Among them, a copolymer of acrylic acid and maleic acid is preferred.
  • the salt is one or more of an ammonium salt, a potassium salt and a sodium salt; preferably an ammonium salt such as ammonium polyacrylate (SD).
  • an ammonium salt such as ammonium polyacrylate (SD).
  • any of the carboxyl group-containing polymers which are known in the prior art can be used in the semiconductor wafer metal substrate corrosion protection liquid of the present invention, provided that the polymer has a certain solubility in water.
  • the molecular weight of the carboxyl group-containing polymer does not affect the achievement of the objects of the present invention. If the semiconductor wafer metal substrate of the present invention has a certain concentration of polymer in the corrosion protection liquid, the semiconductor wafer metal substrate corrosion protection liquid also has a certain concentration of carboxyl groups.
  • the content of the carboxyl group-containing polymer is preferably 0.0001 to 3% by mass.
  • the pigment affinity group is preferably a hydroxyl group or an amino group. It is known that a carboxyl group is also a pigment affinity group, but in the present invention, the pigment-containing affinity group polymer may or may not contain a carboxyl group. In the present invention, the molecular weight of the polymer having a pigment-affinity group is not particularly required.
  • the pigment-affinity group-containing polymer is preferably a polyacrylate polymer containing a pigment affinity group, preferably a copolymer of hydroxyethyl acrylate and acrylamide, and an acrylate type.
  • Copolymer with hydroxyethyl acrylate monomer, copolymer of acrylate monomer and hydroxyethyl methacrylate monomer, copolymer of acrylate monomer and acrylamide monomer acrylate a monomer, a hydroxyethyl acrylate monomer and a terpolymer containing a vinyl monomer, an acrylate monomer, a hydroxyethyl methacrylate monomer, and a terpolymer containing a vinyl monomer, and One or more of an acrylate monomer, an acrylamide monomer, and a ternary copolymer containing a vinyl monomer.
  • the acrylate monomer, the hydroxyethyl acrylate monomer and the vinyl monomer-containing terpolymer are preferably a terpolymer of methyl acrylate, hydroxyethyl acrylate and styrene;
  • the ternary copolymer of an acrylate monomer, an acrylamide monomer, and a vinyl group-containing monomer is preferably a ternary copolymer of butyl acrylate, acrylamide, and acrylic acid.
  • the acrylate monomer is preferably methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, methyl methacrylate, ethyl methacrylate, propyl methacrylate Or butyl methacrylate.
  • the content of the pigment-containing group-containing polymer is preferably a mass percentage
  • the reagents and starting materials used in the present invention are commercially available.
  • the semiconductor wafer metal substrate corrosion protection liquid of the present invention can be obtained by simply mixing and mixing the above components.
  • the invention further relates to a method for using a semiconductor wafer metal substrate corrosion protection liquid of the invention: after removing the etched or etched/ashed residue on the semiconductor wafer with the cleaning liquid, directly using the semiconductor wafer metal base The material corrosion protection liquid cleans the semiconductor wafer and then dries.
  • the semiconductor wafer is an aluminum-containing semiconductor wafer; after the semiconductor wafer is cleaned by etching the protective liquid with the semiconductor wafer metal substrate, it is preferably washed with water.
  • the time for cleaning the semiconductor wafer using the semiconductor wafer metal substrate etching protection liquid of the present invention is preferably not more than 15 minutes.
  • the semiconductor wafer metal substrate corrosion protection liquid of the present invention can be used for cleaning the semiconductor wafer by an overflow immersion method, a rapid liquid drop method or a rotary spray method.
  • the positive progress of the present invention is that the semiconductor wafer metal substrate corrosion protection liquid of the present invention not only has a low corrosion rate for metals (especially aluminum), but also has the characteristics of being environmentally friendly, inexpensive, easy to use, and remarkable in effect.
  • the semiconductor wafer metal substrate corrosion protection liquid of the invention can be rinsed by using the hydroxylamine-containing cleaning liquid, instead of the common solvent isopropanol and N-methylpyrrolidone, or in the fluoride-containing cleaning liquid. After washing, rinsing is performed to increase the operating window when the deionized water is directly rinsed.
  • the semiconductor wafer metal substrate corrosion protection liquid of the invention has good application prospects in the field of microelectronics such as metal cleaning and semiconductor wafer cleaning.
  • Figure 1 is a graph showing the relationship between the corrosion rate of metal aluminum and the dilution ratio of fluorine-containing cleaning solution to water.
  • Table 1 shows the formulations of the semiconductor wafer metal substrate corrosion protection liquid examples 1 to 22 of the present invention, according to the components listed in Table 1 and their contents, simply mixed uniformly, that is, the metal base of each semiconductor wafer is obtained. Corrosion protection liquid. Table 1 The semiconductor wafer metal substrate corrosion protection liquid of the present invention 1 ⁇ 22
  • the plasma-etched wafer was washed with a hydroxylamine cleaning solution (F1) in Table 2 at 65 Torr for 20 minutes. 2. Rotate the wafer with a metal corrosion protection solution 8 in Table 1 for 10 minutes.
  • F1 hydroxylamine cleaning solution
  • a cleaning solution containing a mesamine and a fluorine-containing cleaning liquid (see Table 2) were prepared according to the disclosed patents having typical significance, and the two were tested with different proportions of water.
  • Metal aluminum corrosion rate at dilution (see Table 3 for details).
  • the metal aluminum corrosion rate has a curve from low to high and high to low as the dilution ratio (diluent/fluorine cleaning solution) increases.
  • the corrosion rate of the metal corrosion-resistant liquid of the present invention is small (0. 53/1.39). When diluted with different proportions of hydroxylamine cleaning solution, it has a lower corrosion rate (all less than l. OA / min). When diluted with different proportions of fluorinated cleaning solution, Compared with water, the peak of increasing corrosion rate is reduced from 89 ⁇ 109.36A/min in Table 3 to below 56A/min in Table 4 (ie, lowering the peak height in Figure 1), which can be a fluorine-containing class. The rinsing step after cleaning the cleaning solution provides a larger operating window.
  • the positive progress of the present invention is:
  • the maximum rate of metal corrosion during rinsing can be reduced (i.e., the peak height in Fig. 1 is lowered), and a larger operation window can be provided for rinsing.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Un inhibiteur de corrosion du métal destiné à une puce à semi-conducteurs comprend un acide polycarboxylique, un groupe d'affiliation de pigment contenant un polymère et de l'eau. Selon un procédé : des résidus sur la puce à semi-conducteurs qui est gravée ou gravée/polie sont traités avec une composition de nettoyage, puis la puce à semi-conducteurs est nettoyée directement avec l'inhibiteur de corrosion du métal et séchée. L'inhibiteur de corrosion du métal destiné à la puce à semi-conducteurs présente une faible vitesse de gravure pour les métaux, en particulier pour l'aluminium.
PCT/CN2008/001829 2007-11-02 2008-10-31 Inhibiteur de corrosion pour substrat métallique d'une puce à semi-conducteurs et son procédé d'utilisation WO2009062397A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008801148297A CN101842747B (zh) 2007-11-02 2008-10-31 一种半导体晶圆金属基材腐蚀防护液及其使用方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200710047790.9 2007-11-02
CNA2007100477909A CN101424887A (zh) 2007-11-02 2007-11-02 一种半导体晶圆金属基材腐蚀防护液及其使用方法

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WO2009062397A1 true WO2009062397A1 (fr) 2009-05-22

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102981376A (zh) * 2011-09-05 2013-03-20 安集微电子（上海）有限公司 一种光刻胶清洗液

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102296294B (zh) * 2010-06-25 2016-01-20 安集微电子（上海）有限公司 一种金属腐蚀保护液及其应用
CN102566331B (zh) * 2010-12-21 2016-08-03 安集微电子（上海）有限公司 一种厚膜光刻胶清洗液
CN102540774A (zh) * 2010-12-21 2012-07-04 安集微电子（上海）有限公司 一种厚膜光刻胶清洗剂
WO2012083587A1 (fr) * 2010-12-21 2012-06-28 安集微电子（上海）有限公司 Liquide de nettoyage pour photoréserves en couche épaisse
CN103377877B (zh) * 2012-04-27 2016-04-27 中芯国际集成电路制造(上海)有限公司 半导体器件的清洗方法

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CN1083835A (zh) * 1992-09-11 1994-03-16 鲁布里佐尔公司 抑制腐蚀组合物
US5516459A (en) * 1994-08-12 1996-05-14 Buckeye International, Inc. Aircraft cleaning/degreasing compositions
CN1359430A (zh) * 1999-05-03 2002-07-17 贝茨迪尔博恩公司 含水系统中抑制腐蚀的方法和组合物
CN1572913A (zh) * 2003-06-09 2005-02-02 日本油漆株式会社 铝类基材的表面处理方法和经表面处理的基材
CN1900363A (zh) * 2005-07-21 2007-01-24 安集微电子（上海）有限公司 清洗液及其用途
CN1982426A (zh) * 2005-12-16 2007-06-20 安集微电子（上海）有限公司 用于半导体晶片清洗的缓蚀剂体系

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1083835A (zh) * 1992-09-11 1994-03-16 鲁布里佐尔公司 抑制腐蚀组合物
US5516459A (en) * 1994-08-12 1996-05-14 Buckeye International, Inc. Aircraft cleaning/degreasing compositions
CN1359430A (zh) * 1999-05-03 2002-07-17 贝茨迪尔博恩公司 含水系统中抑制腐蚀的方法和组合物
CN1572913A (zh) * 2003-06-09 2005-02-02 日本油漆株式会社 铝类基材的表面处理方法和经表面处理的基材
CN1900363A (zh) * 2005-07-21 2007-01-24 安集微电子（上海）有限公司 清洗液及其用途
CN1982426A (zh) * 2005-12-16 2007-06-20 安集微电子（上海）有限公司 用于半导体晶片清洗的缓蚀剂体系

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102981376A (zh) * 2011-09-05 2013-03-20 安集微电子（上海）有限公司 一种光刻胶清洗液

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