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WO2009057764A1 - エッチング方法およびそれを用いた光／電子デバイスの製造方法 - Google Patents

エッチング方法およびそれを用いた光／電子デバイスの製造方法 Download PDF

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Publication number
WO2009057764A1
WO2009057764A1 PCT/JP2008/069920 JP2008069920W WO2009057764A1 WO 2009057764 A1 WO2009057764 A1 WO 2009057764A1 JP 2008069920 W JP2008069920 W JP 2008069920W WO 2009057764 A1 WO2009057764 A1 WO 2009057764A1
Authority
WO
WIPO (PCT)
Prior art keywords
etching
electronic device
same
etching method
manufacturing optical
Prior art date
Application number
PCT/JP2008/069920
Other languages
English (en)
French (fr)
Inventor
Hideyoshi Horie
Takashi Fukada
Original Assignee
Mitsubishi Chemical Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corporation filed Critical Mitsubishi Chemical Corporation
Priority to US12/740,808 priority Critical patent/US20100304570A1/en
Priority to EP08843452A priority patent/EP2211373A1/en
Publication of WO2009057764A1 publication Critical patent/WO2009057764A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Led Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)

Abstract

　比較的簡単なプロセスにより例えばＩＩＩ－Ｖ族窒化物半導体のようなエッチングが困難な半導体層でも容易にエッチングが可能な半導体エッチング方法が提供される。このエッチング方法は、基体（１，２）の表面に、エッチングマスクの少なくとも一部として、金属フッ化物層３を形成する工程と、前記金属フッ化物層を液体処理する工程と、前記金属フッ化物層をマスクとして、前記基体をエッチングする工程とを有することを特徴とする。
PCT/JP2008/069920 2007-10-31 2008-10-31 エッチング方法およびそれを用いた光／電子デバイスの製造方法 WO2009057764A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/740,808 US20100304570A1 (en) 2007-10-31 2008-10-31 Etching method and method for manufacturing optical/electronic device using the same
EP08843452A EP2211373A1 (en) 2007-10-31 2008-10-31 Etching method and method for manufacturing optical/electronic device using the same

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007-283561 2007-10-31
JP2007283560 2007-10-31
JP2007283561 2007-10-31
JP2007-283562 2007-10-31
JP2007283562 2007-10-31
JP2007-283560 2007-10-31

Publications (1)

Publication Number Publication Date
WO2009057764A1 true WO2009057764A1 (ja) 2009-05-07

Family

ID=40591144

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069920 WO2009057764A1 (ja) 2007-10-31 2008-10-31 エッチング方法およびそれを用いた光／電子デバイスの製造方法

Country Status (5)

Country Link
US (1) US20100304570A1 (ja)
EP (1) EP2211373A1 (ja)
KR (1) KR20100094479A (ja)
TW (1) TW200933727A (ja)
WO (1) WO2009057764A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097496A (zh) * 2014-05-16 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 刻蚀的方法
CN113224209A (zh) * 2020-02-05 2021-08-06 凌巨科技股份有限公司 太阳能电池缓坡结构及其制造方法
WO2022190699A1 (ja) * 2021-03-11 2022-09-15 富士フイルム株式会社 薬液、処理方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5258666B2 (ja) * 2009-04-22 2013-08-07 株式会社半導体エネルギー研究所 発光装置の作製方法および成膜用基板
KR101038923B1 (ko) * 2010-02-02 2011-06-03 전북대학교산학협력단 개선된 발광 효율을 갖는 발광 다이오드 및 이의 제조방법
US20120103419A1 (en) * 2010-10-27 2012-05-03 The Regents Of The University Of California Group-iii nitride solar cells grown on high quality group-iii nitride crystals mounted on foreign material
JP5802407B2 (ja) * 2011-03-04 2015-10-28 三菱瓦斯化学株式会社 基板処理装置および基板処理方法
WO2013089641A1 (en) * 2011-12-12 2013-06-20 Xu Shuyan Chemical texturing of monocrystalline silicon substrate
US20130186764A1 (en) * 2012-01-19 2013-07-25 Kesheng Feng Low Etch Process for Direct Metallization
KR20130122089A (ko) * 2012-04-30 2013-11-07 (주)버티클 반도체 소자 제조 방법
US9443737B2 (en) 2013-04-03 2016-09-13 Texas Instruments Incorporated Method of forming metal contacts in the barrier layer of a group III-N HEMT
KR101471620B1 (ko) * 2013-06-07 2014-12-11 광주과학기술원 산화아연 박막 구조체 및 이의 제조방법
WO2015103146A1 (en) * 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
EP3320562B1 (en) * 2015-07-09 2024-08-28 Entegris, Inc. Formulations to selectively etch silicon germanium relative to germanium
JP6560933B2 (ja) * 2015-08-25 2019-08-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6845483B2 (ja) * 2018-11-26 2021-03-17 日亜化学工業株式会社 発光素子の製造方法
CN114657376B (zh) * 2022-05-10 2024-06-18 江苏和达电子科技有限公司 一种用于显示制程蚀刻废液的回收系统及方法
CN115224156B (zh) * 2022-06-14 2023-06-06 清华大学 一种片上红外感存算一体的光电器件及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63140537A (ja) * 1986-12-02 1988-06-13 Oki Electric Ind Co Ltd 半導体層のエツチング方法
JPH0228334A (ja) * 1987-10-05 1990-01-30 Menlo Ind Inc 基板貫通孔及び金属化背面を具備する集積回路装置及びその装置の製造方法
JPH0536648A (ja) 1991-07-25 1993-02-12 Toshiba Corp 半導体基板のエツチング方法及びこの方法により製造される半導体装置
JPH05267793A (ja) * 1992-03-23 1993-10-15 Nec Corp 化合物半導体の結晶成長方法
JPH06310471A (ja) 1993-04-21 1994-11-04 Nec Corp 微細構造形成方法
JPH11150303A (ja) 1997-11-14 1999-06-02 Sanyo Electric Co Ltd 発光部品
JP2002026384A (ja) 2000-07-05 2002-01-25 Nichia Chem Ind Ltd 集積型窒化物半導体発光素子
WO2006082322A1 (fr) * 2005-02-07 2006-08-10 Centre National De La Recherche Scientifique-Cnrs- Procede d’oxydation planaire pour realiser un isolant enterre localise

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US5034347A (en) * 1987-10-05 1991-07-23 Menlo Industries Process for producing an integrated circuit device with substrate via hole and metallized backplane

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63140537A (ja) * 1986-12-02 1988-06-13 Oki Electric Ind Co Ltd 半導体層のエツチング方法
JPH0228334A (ja) * 1987-10-05 1990-01-30 Menlo Ind Inc 基板貫通孔及び金属化背面を具備する集積回路装置及びその装置の製造方法
JPH0536648A (ja) 1991-07-25 1993-02-12 Toshiba Corp 半導体基板のエツチング方法及びこの方法により製造される半導体装置
JPH05267793A (ja) * 1992-03-23 1993-10-15 Nec Corp 化合物半導体の結晶成長方法
JPH06310471A (ja) 1993-04-21 1994-11-04 Nec Corp 微細構造形成方法
JPH11150303A (ja) 1997-11-14 1999-06-02 Sanyo Electric Co Ltd 発光部品
JP2002026384A (ja) 2000-07-05 2002-01-25 Nichia Chem Ind Ltd 集積型窒化物半導体発光素子
WO2006082322A1 (fr) * 2005-02-07 2006-08-10 Centre National De La Recherche Scientifique-Cnrs- Procede d’oxydation planaire pour realiser un isolant enterre localise

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Title
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B, vol. 8, 1990, pages 28

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097496A (zh) * 2014-05-16 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 刻蚀的方法
CN113224209A (zh) * 2020-02-05 2021-08-06 凌巨科技股份有限公司 太阳能电池缓坡结构及其制造方法
WO2022190699A1 (ja) * 2021-03-11 2022-09-15 富士フイルム株式会社 薬液、処理方法

Also Published As

Publication number Publication date
US20100304570A1 (en) 2010-12-02
TW200933727A (en) 2009-08-01
KR20100094479A (ko) 2010-08-26
EP2211373A1 (en) 2010-07-28

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