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WO2009054180A1 - 磁気抵抗効果素子及び磁気ランダムアクセスメモリ - Google Patents

磁気抵抗効果素子及び磁気ランダムアクセスメモリ Download PDF

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Publication number
WO2009054180A1
WO2009054180A1 PCT/JP2008/064891 JP2008064891W WO2009054180A1 WO 2009054180 A1 WO2009054180 A1 WO 2009054180A1 JP 2008064891 W JP2008064891 W JP 2008064891W WO 2009054180 A1 WO2009054180 A1 WO 2009054180A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetization
layer
free layer
fixed
magnetization free
Prior art date
Application number
PCT/JP2008/064891
Other languages
English (en)
French (fr)
Inventor
Shunsuke Fukami
Nobuyuki Ishiwata
Tetsuhiro Suzuki
Norikazu Ohshima
Kiyokazu Nagahara
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009537984A priority Critical patent/JP5360599B2/ja
Priority to US12/739,855 priority patent/US8154913B2/en
Publication of WO2009054180A1 publication Critical patent/WO2009054180A1/ja

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

　磁気抵抗効果素子は、磁化方向が固定された第１磁化固定層と、磁化方向が可変な第１磁化自由層と、第１磁化固定層と第１磁化自由層とに挟まれた第１非磁性層と、磁化方向が固定された第２磁化固定層と、磁化方向が可変な第２磁化自由層と、第２磁化固定層と第２磁化自由層とに挟まれた第２非磁性層と、を備える。第１磁化固定層と第１磁化自由層は、垂直磁気異方性を有する。一方、第２磁化固定層と第２磁化自由層は、面内磁気異方性を有する。第１磁化自由層と第２磁化自由層は、互いに磁気的に結合している。また、各層に平行な平面において、第２磁化自由層の重心は、第１磁化自由層の重心からずれている。
PCT/JP2008/064891 2007-10-25 2008-08-21 磁気抵抗効果素子及び磁気ランダムアクセスメモリ WO2009054180A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009537984A JP5360599B2 (ja) 2007-10-25 2008-08-21 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
US12/739,855 US8154913B2 (en) 2007-10-25 2008-08-21 Magnetoresistance effect element and magnetic random access memory

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007277519 2007-10-25
JP2007-277519 2007-10-25

Publications (1)

Publication Number Publication Date
WO2009054180A1 true WO2009054180A1 (ja) 2009-04-30

Family

ID=40579287

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064891 WO2009054180A1 (ja) 2007-10-25 2008-08-21 磁気抵抗効果素子及び磁気ランダムアクセスメモリ

Country Status (3)

Country Link
US (1) US8154913B2 (ja)
JP (1) JP5360599B2 (ja)
WO (1) WO2009054180A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009110530A1 (ja) * 2008-03-07 2009-09-11 日本電気株式会社 半導体装置
JP2011091342A (ja) * 2009-10-26 2011-05-06 Nec Corp 磁気抵抗素子、及び磁壁ランダムアクセスメモリ
JP2013030685A (ja) * 2011-07-29 2013-02-07 Toshiba Corp 磁気抵抗素子及び磁気メモリ
KR101375871B1 (ko) * 2012-04-09 2014-03-17 삼성전자주식회사 자기 공명과 이중 스핀필터 효과를 이용한 스핀전달토크 자기 메모리 소자
US9478729B2 (en) 2011-05-12 2016-10-25 Samsung Electronics Co., Ltd. Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect
WO2017213261A1 (ja) * 2016-06-10 2017-12-14 Tdk株式会社 交換バイアス利用型磁化反転素子、交換バイアス利用型磁気抵抗効果素子、交換バイアス利用型磁気メモリ、不揮発性ロジック回路および磁気ニューロン素子
JP2018093065A (ja) * 2016-12-02 2018-06-14 株式会社東芝 磁気メモリ
US10453523B2 (en) 2016-04-21 2019-10-22 Tdk Corporation Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory
US10482987B2 (en) 2016-04-21 2019-11-19 Tdk Corporation Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory

Families Citing this family (8)

* Cited by examiner, † Cited by third party
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US8250299B2 (en) * 2009-05-20 2012-08-21 International Business Machines Corporation Multi-host concurrent writing to magnetic tape
US9450177B2 (en) 2010-03-10 2016-09-20 Tohoku University Magnetoresistive element and magnetic memory
JP5725735B2 (ja) * 2010-06-04 2015-05-27 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP2012203939A (ja) * 2011-03-24 2012-10-22 Toshiba Corp 半導体記憶装置
JP5490167B2 (ja) 2012-03-23 2014-05-14 株式会社東芝 磁気メモリ
US8670264B1 (en) * 2012-08-14 2014-03-11 Avalanche Technology, Inc. Multi-port magnetic random access memory (MRAM)
US9087535B2 (en) 2013-10-31 2015-07-21 Seagate Technology Llc Spin transport sensor
CN116250388A (zh) * 2020-11-30 2023-06-09 华为技术有限公司 一种存储器及电子设备

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JP2005116888A (ja) * 2003-10-09 2005-04-28 Toshiba Corp 磁気メモリ

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US5650887A (en) * 1996-02-26 1997-07-22 International Business Machines Corporation System for resetting sensor magnetization in a spin valve magnetoresistive sensor
JP5254514B2 (ja) * 1999-09-10 2013-08-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 減少した電磁切換え磁場を持つ磁気抵抗検知器又は記憶素子
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JP2006351684A (ja) * 2005-06-14 2006-12-28 Tdk Corp 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、およびハードディスク装置
JP4444241B2 (ja) 2005-10-19 2010-03-31 株式会社東芝 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置
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Non-Patent Citations (1)

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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2009110530A1 (ja) * 2008-03-07 2011-07-14 日本電気株式会社 半導体装置
WO2009110530A1 (ja) * 2008-03-07 2009-09-11 日本電気株式会社 半導体装置
JP2011091342A (ja) * 2009-10-26 2011-05-06 Nec Corp 磁気抵抗素子、及び磁壁ランダムアクセスメモリ
US9478729B2 (en) 2011-05-12 2016-10-25 Samsung Electronics Co., Ltd. Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect
JP2013030685A (ja) * 2011-07-29 2013-02-07 Toshiba Corp 磁気抵抗素子及び磁気メモリ
US8879307B2 (en) 2011-07-29 2014-11-04 Kabushiki Kaisha Toshiba Magnetoresistive device and nonvolatile memory with the same
KR101375871B1 (ko) * 2012-04-09 2014-03-17 삼성전자주식회사 자기 공명과 이중 스핀필터 효과를 이용한 스핀전달토크 자기 메모리 소자
US10453523B2 (en) 2016-04-21 2019-10-22 Tdk Corporation Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory
US10482987B2 (en) 2016-04-21 2019-11-19 Tdk Corporation Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory
US10892009B2 (en) 2016-04-21 2021-01-12 Tdk Corporation Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory
WO2017213261A1 (ja) * 2016-06-10 2017-12-14 Tdk株式会社 交換バイアス利用型磁化反転素子、交換バイアス利用型磁気抵抗効果素子、交換バイアス利用型磁気メモリ、不揮発性ロジック回路および磁気ニューロン素子
JPWO2017213261A1 (ja) * 2016-06-10 2019-04-04 Tdk株式会社 交換バイアス利用型磁化反転素子、交換バイアス利用型磁気抵抗効果素子、交換バイアス利用型磁気メモリ、不揮発性ロジック回路および磁気ニューロン素子
US10672446B2 (en) 2016-06-10 2020-06-02 Tdk Corporation Exchange bias utilization type magnetization rotational element, exchange bias utilization type magnetoresistance effect element, exchange bias utilization type magnetic memory, non-volatile logic circuit, and magnetic neuron element
JP2018093065A (ja) * 2016-12-02 2018-06-14 株式会社東芝 磁気メモリ
US10102894B2 (en) 2016-12-02 2018-10-16 Kabushiki Kaisha Toshiba Magnetic memory

Also Published As

Publication number Publication date
US20100254183A1 (en) 2010-10-07
US8154913B2 (en) 2012-04-10
JP5360599B2 (ja) 2013-12-04
JPWO2009054180A1 (ja) 2011-03-03

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