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WO2009044898A1 - Indium oxide transparent conductive film and method for producing the same - Google Patents

Indium oxide transparent conductive film and method for producing the same Download PDF

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Publication number
WO2009044898A1
WO2009044898A1 PCT/JP2008/068107 JP2008068107W WO2009044898A1 WO 2009044898 A1 WO2009044898 A1 WO 2009044898A1 JP 2008068107 W JP2008068107 W JP 2008068107W WO 2009044898 A1 WO2009044898 A1 WO 2009044898A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent conductive
conductive film
indium oxide
producing
same
Prior art date
Application number
PCT/JP2008/068107
Other languages
French (fr)
Japanese (ja)
Inventor
Seiichiro Takahashi
Norihiko Miyashita
Makoto Ikeda
Original Assignee
Mitsui Mining & Smelting Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co., Ltd. filed Critical Mitsui Mining & Smelting Co., Ltd.
Priority to JP2008550303A priority Critical patent/JPWO2009044898A1/en
Publication of WO2009044898A1 publication Critical patent/WO2009044898A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

Disclosed is a transparent conductive film which is formed as an amorphous film by using a sputtering target which comprises an oxide sintered body containing barium in addition to indium oxide and tin. This transparent conductive film is characterized by containing barium in addition to indium oxide and tin, and is also characterized in that the molar ratio y of tin relative to 1 mole of indium is less than the value (-2.9 x 10-2 Ln(x) - 6.7 x 10-2) which is expressed by using the molar ratio x of barium relative to 1 mole of indium, and the crystallization temperature by annealing is not less than 100˚C.
PCT/JP2008/068107 2007-10-03 2008-10-03 Indium oxide transparent conductive film and method for producing the same WO2009044898A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008550303A JPWO2009044898A1 (en) 2007-10-03 2008-10-03 Indium oxide-based transparent conductive film and method for producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-260434 2007-10-03
JP2007260434 2007-10-03

Publications (1)

Publication Number Publication Date
WO2009044898A1 true WO2009044898A1 (en) 2009-04-09

Family

ID=40526313

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068107 WO2009044898A1 (en) 2007-10-03 2008-10-03 Indium oxide transparent conductive film and method for producing the same

Country Status (4)

Country Link
JP (1) JPWO2009044898A1 (en)
KR (1) KR20100067120A (en)
TW (1) TW200923973A (en)
WO (1) WO2009044898A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7754110B2 (en) * 2006-03-31 2010-07-13 Mitsui Mining & Smelting Co., Ltd. Indium-oxide-based transparent conductive film and method for producing the film
JP2017057505A (en) * 2014-04-30 2017-03-23 日東電工株式会社 Transparent conductive film and production method thereof
US10303284B2 (en) 2014-04-30 2019-05-28 Nitto Denko Corporation Transparent conductive film and method for producing the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06290641A (en) * 1993-03-30 1994-10-18 Asahi Glass Co Ltd Noncrystal transparent conductive membrane
JPH08188465A (en) * 1995-01-10 1996-07-23 Tosoh Corp Conductive ceramics and manufacturing method thereof
JPH08245220A (en) * 1994-06-10 1996-09-24 Hoya Corp Electrically conductive oxide and electrode using same
JP2004149883A (en) * 2002-10-31 2004-05-27 Mitsui Mining & Smelting Co Ltd Sputtering target for high resistance transparent conductive film, and manufacturing method of high resistance transparent conductive film
JP2005135649A (en) * 2003-10-28 2005-05-26 Mitsui Mining & Smelting Co Ltd Indium oxide based transparent conductive film and its manufacturing method
JP2007294447A (en) * 2006-03-31 2007-11-08 Mitsui Mining & Smelting Co Ltd Indium oxide based transparent conductive membrane and its manufacturing method
JP2007291521A (en) * 2006-03-31 2007-11-08 Mitsui Mining & Smelting Co Ltd Sputtering target and method for producing oxide sintered body

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06290641A (en) * 1993-03-30 1994-10-18 Asahi Glass Co Ltd Noncrystal transparent conductive membrane
JPH08245220A (en) * 1994-06-10 1996-09-24 Hoya Corp Electrically conductive oxide and electrode using same
JPH08188465A (en) * 1995-01-10 1996-07-23 Tosoh Corp Conductive ceramics and manufacturing method thereof
JP2004149883A (en) * 2002-10-31 2004-05-27 Mitsui Mining & Smelting Co Ltd Sputtering target for high resistance transparent conductive film, and manufacturing method of high resistance transparent conductive film
JP2005135649A (en) * 2003-10-28 2005-05-26 Mitsui Mining & Smelting Co Ltd Indium oxide based transparent conductive film and its manufacturing method
JP2007294447A (en) * 2006-03-31 2007-11-08 Mitsui Mining & Smelting Co Ltd Indium oxide based transparent conductive membrane and its manufacturing method
JP2007291521A (en) * 2006-03-31 2007-11-08 Mitsui Mining & Smelting Co Ltd Sputtering target and method for producing oxide sintered body

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7754110B2 (en) * 2006-03-31 2010-07-13 Mitsui Mining & Smelting Co., Ltd. Indium-oxide-based transparent conductive film and method for producing the film
JP2017057505A (en) * 2014-04-30 2017-03-23 日東電工株式会社 Transparent conductive film and production method thereof
US10303284B2 (en) 2014-04-30 2019-05-28 Nitto Denko Corporation Transparent conductive film and method for producing the same

Also Published As

Publication number Publication date
KR20100067120A (en) 2010-06-18
JPWO2009044898A1 (en) 2011-02-17
TW200923973A (en) 2009-06-01

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