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WO2009042463A1 - Integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate - Google Patents

Integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate Download PDF

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Publication number
WO2009042463A1
WO2009042463A1 PCT/US2008/076654 US2008076654W WO2009042463A1 WO 2009042463 A1 WO2009042463 A1 WO 2009042463A1 US 2008076654 W US2008076654 W US 2008076654W WO 2009042463 A1 WO2009042463 A1 WO 2009042463A1
Authority
WO
WIPO (PCT)
Prior art keywords
microelectronic die
conductive contacts
layers
dielectric material
top surface
Prior art date
Application number
PCT/US2008/076654
Other languages
French (fr)
Inventor
Oswald Skeete
Ravi Mahajan
John Guzek
Original Assignee
Intel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corporation filed Critical Intel Corporation
Priority to DE112008002459.6T priority Critical patent/DE112008002459B4/en
Priority to JP2010523204A priority patent/JP2010538478A/en
Priority to CN200880106620.6A priority patent/CN101802991B/en
Priority to KR1020107006459A priority patent/KR101160405B1/en
Publication of WO2009042463A1 publication Critical patent/WO2009042463A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0652—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
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    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
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    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
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    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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Definitions

  • Embodiments of the present invention generally relate to the field of integrated circuit package design and, more particularly, to integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate.
  • FIG. 1 is a graphical illustration of a cross-sectional view of a first package element including high density bump-less build up layers, in accordance with one example embodiment of the invention
  • FIG. 2 is a graphical illustration of a cross-sectional view of a second package element including a lesser density core or coreless substrate, in accordance with one example embodiment of the invention
  • FIG. 3 is a graphical illustration of an overhead view of an integrated circuit package, in accordance with one example embodiment of the invention.
  • FIG. 4 is a block diagram of an example electronic appliance suitable for implementing an integrated circuit package, in accordance with one example embodiment of the invention.
  • Fig. 1 is a graphical illustration of a cross-sectional view of a first package element including high density bump-less build up layers, in accordance with one example embodiment of the invention.
  • first integrated circuit package element 100 includes one or more of microelectronic die 102, microelectronic die active surface 104, encapsulation material 106, microelectronic package core 108, first dielectric material layer 110, build-up layers 112, conductive traces 114, and conductive contacts 116.
  • Microelectronic die 102 is intended to represent any type of integrated circuit die.
  • microelectronic die 102 is a multi-core microprocessor.
  • Microelectronic die 102 includes an active surface 104 which contains the electrical connections necessary to operate microelectronic die 102.
  • Microelectronic die 102 is held in place on at least one side by encapsulation material 106.
  • Encapsulation material 106 includes at least one surface substantially planar to active surface 104.
  • active surface 104 is placed on a holding plate while encapsulation material 106 is disposed around microelectronic die 102.
  • Encapsulation material 106 may extend over the back side (opposite active surface 104) of microelectronic die 102.
  • Microelectronic package core 108 may be included in first integrated circuit package element 100 to provide mechanical support and stability during the build-up process. Microelectronic package core 108 may have an opening in which microelectronic die 102 is disposed. In one embodiment microelectronic package core 108 is not included in first integrated circuit package element 100, and encapsulation material 106 may be used to a greater extent. [0010] First dielectric material layer 110 is disposed on at least a portion of active surface 104 and encapsulation material 106. Build-up layers 112 are subsequently disposed on first dielectric material layer 110 using well known processing methods.
  • Conductive traces 114 are disposed on first dielectric material layer 110 and build-up layers 112 and are in electrical contact with active surface 104. Conductive contacts 116 couple with conductive traces 114 and allow first integrated circuit package element 100 to be electrically coupled, for example by a solder connection, to second integrated circuit package element 200, which is described below. In one embodiment, conductive contacts 116 include solder bumps. In another embodiment, conductive contacts 116 include lands. [0012] Fig. 2 is a graphical illustration of a cross-sectional view of a second package element including a lesser density core or coreless substrate, in accordance with one example embodiment of the invention.
  • second integrated circuit package element 200 includes one or more of substrate core 202, upper build-up layers 204, lower build-up layers 206, top surface 208, bottom surface 210, top conductive contacts 212, bottom conductive contacts 214, conductive traces 216, embedded components 218, top pitch 220, and bottom pitch 222.
  • Second integrated circuit package element 200 is coupled with first integrated circuit package element 100 to form an integrated circuit package.
  • Second integrated circuit package element 200 may include a substrate core 202 to provide mechanical support.
  • Well known processing methods may be utilized to form upper build-up layers 204 and lower build-up layers 206.
  • substrate core 202 is not included in second integrated circuit package element 200, and build-up layers alone, for example a multi-layer organic substrate, may be utilized.
  • Top conductive contacts 212 are disposed on top surface 208. Top conductive contacts 212 allow second integrated circuit package element 200 to be electrically coupled, for example by a solder connection, to first integrated circuit package element 100. In one embodiment, top conductive contacts 212 include solder bumps. In another embodiment, top conductive contacts 212 include lands.
  • Bottom conductive contacts 214 are disposed on bottom surface 208. Bottom conductive contacts 212 allow second integrated circuit package element 200 to be electrically coupled, for example by a socket connection, to other devices, for example a printed circuit board. In one embodiment, bottom conductive contacts 214 comprise a land grid array. In another embodiment, bottom conductive contacts 214 comprise a ball grid array. In another embodiment, bottom conductive contacts 214 comprise a pin grid array. [0016] Conductive traces 216 are routed through second integrated circuit package element 200 to conductively couple top conductive contacts 212 with bottom conductive contacts 214. [0017] Embedded components 218 may be included in the substrate of second integrated circuit package element 200. In one embodiment, embedded components 218 include at least one memory device.
  • embedded components 218 include at least one discrete component such as a capacitor, inductor, resistor, logic device or the like.
  • Second integrated circuit package element 200 is designed to transmit signals from a top pitch 220 to a bottom pitch 222.
  • top pitch 220 is as fine as practicable to be able to form solder joint connections between first integrated circuit package element 100 and second integrated circuit package element 200.
  • top pitch 220 is from about 80 to about 130 micrometers.
  • bottom pitch 222 is from about 400 to about 800 micrometers.
  • Fig. 3 is a graphical illustration of an overhead view of an integrated circuit package, in accordance with one example embodiment of the invention.
  • integrated circuit package 300 includes a plurality of first package elements 100 coupled with a second package element 200. While shown as including four first package elements 100, any number may be included. In one embodiment, sixteen first package elements 100 are coupled with a second package element 200.
  • An underfill material 302, such as an epoxy, may be flowed between first elements 100 and second element 200. Underfill material 302 may substantially fill the space between the connections, for example solder joint connections (not shown), between conductive contacts 116 and conductive contacts 212.
  • solder joint connections not shown
  • Electronic appliance 400 is intended to represent any of a wide variety of traditional and non-traditional electronic appliances, laptops, desktops, cell phones, wireless communication subscriber units, wireless communication telephony infrastructure elements, personal digital assistants, set-top boxes, or any electric appliance that would benefit from the teachings of the present invention.
  • electronic appliance 400 may include one or more of processor(s) 402, memory controller 404, system memory 406, input/output controller 408, network controller 410, and input/output device(s) 412 coupled as shown in Fig. 4.
  • Processor(s) 402, or other integrated circuit components of electronic appliance 400 may comprise a two element package as described previously as an embodiment of the present invention.
  • Processor(s) 402 may represent any of a wide variety of control logic including, but not limited to one or more of a microprocessor, a programmable logic device (PLD), programmable logic array (PLA), application specific integrated circuit (ASIC), a microcontroller, and the like, although the present invention is not limited in this respect.
  • processors(s) 402 are Intel® compatible processors.
  • Processor(s) 402 may have an instruction set containing a plurality of machine level instructions that may be invoked, for example by an application or operating system.
  • Memory controller 404 may represent any type of chipset or control logic that interfaces system memory 406 with the other components of electronic appliance 400.
  • the connection between processor(s) 402 and memory controller 404 may be a point-to-point serial link.
  • memory controller 404 may be referred to as a north bridge.
  • System memory 406 may represent any type of memory device(s) used to store data and instructions that may have been or will be used by processor(s) 402. Typically, though the invention is not limited in this respect, system memory 406 will consist of dynamic random access memory (DRAM). In one embodiment, system memory 406 may consist of Rambus DRAM (RDRAM). In another embodiment, system memory 406 may consist of double data rate synchronous DRAM (DDRSDRAM).
  • DRAM dynamic random access memory
  • RDRAM Rambus DRAM
  • DDRSDRAM double data rate synchronous DRAM
  • I/O controller 408 may represent any type of chipset or control logic that interfaces I/O device(s) 412 with the other components of electronic appliance 400.
  • I/O controller 408 may be referred to as a south bridge.
  • I/O controller 408 may comply with the Peripheral Component Interconnect (PCI) ExpressTM Base Specification, Revision 1.0a, PCI Special Interest Group, released April 15, 2003.
  • PCI Peripheral Component Interconnect
  • Network controller 410 may represent any type of device that allows electronic appliance 400 to communicate with other electronic appliances or devices.
  • network controller 410 may comply with a The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 802.11b standard (approved September 16, 1999, supplement to ANSI/IEEE Std 802.11, 1999 Edition).
  • network controller 410 may be an Ethernet network interface card.
  • I/O device(s) 412 may represent any type of device, peripheral or component that provides input to or processes output from electronic appliance 400.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Semiconductor Memories (AREA)

Abstract

In some embodiments, integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate are presented. In this regard, an apparatus is introduced having a first element including a microelectronic die having an active surface and at least one side, an encapsulation material adjacent said at least one microelectronic die side, wherein said encapsulation material includes at least one surface substantially planar to said microelectronic die active surface, a first dielectric material layer disposed on at least a portion of said microelectronic die active surface and said encapsulation material surface, a plurality of build-up layers disposed on said first dielectric material layer, and a plurality of conductive traces disposed on said first dielectric material layer and said build-up layers and in electrical contact with said microelectronic die active surface; and a second element coupled to the first element, the second element including a substrate having a plurality of dielectric material layers and conductive traces to conductively couple conductive contacts on a top surface with conductive contacts on a bottom surface, said conductive contacts on said top surface conductively coupled with said conductive traces of said first element. Other embodiments are also disclosed and claimed.

Description

INTEGRATED CIRCUIT PACKAGES INCLUDING HIGH DENSITY BUMP-LESS BUILD UP LAYERS AND A LESSER DENSITY CORE OR CORELESS
SUBSTRATE
FIELD OF THE INVENTION
[0001] Embodiments of the present invention generally relate to the field of integrated circuit package design and, more particularly, to integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate.
BACKGROUND OF THE INVENTION
[0002] With shrinking transistor size and more functionality incorporated into microelectronic devices, die to package substrate interconnect geometries will also need to be reduced. Currently, the die is connected to the package substrate using a solder joint connection commonly referred to as a flip-chip connection. Traditional flip chip processes become increasingly complex as bump pitch reduces because of the difficulty in under filling the space between the flip chip bumps.
BRIEF DESCRIPTION OF THE DRAWINGS
[0003] The present invention is illustrated by way of example and not limitation in the figures of the accompanying drawings in which like references indicate similar elements, and in which:
[0004] FIG. 1 is a graphical illustration of a cross-sectional view of a first package element including high density bump-less build up layers, in accordance with one example embodiment of the invention;
[0005] FIG. 2 is a graphical illustration of a cross-sectional view of a second package element including a lesser density core or coreless substrate, in accordance with one example embodiment of the invention;
[0006] FIG. 3 is a graphical illustration of an overhead view of an integrated circuit package, in accordance with one example embodiment of the invention; and [0007] FIG. 4 is a block diagram of an example electronic appliance suitable for implementing an integrated circuit package, in accordance with one example embodiment of the invention.
DETAILED DESCRIPTION
[0004] In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the invention. It will be apparent, however, to one skilled in the art that embodiments of the invention can be practiced without these specific details. In other instances, structures and devices are shown in block diagram form in order to avoid obscuring the invention.
[0005] Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures or characteristics may be combined in any suitable manner in one or more embodiments.
[0006] Fig. 1 is a graphical illustration of a cross-sectional view of a first package element including high density bump-less build up layers, in accordance with one example embodiment of the invention. As shown, first integrated circuit package element 100 includes one or more of microelectronic die 102, microelectronic die active surface 104, encapsulation material 106, microelectronic package core 108, first dielectric material layer 110, build-up layers 112, conductive traces 114, and conductive contacts 116. [0007] Microelectronic die 102 is intended to represent any type of integrated circuit die. In one embodiment, microelectronic die 102 is a multi-core microprocessor. Microelectronic die 102 includes an active surface 104 which contains the electrical connections necessary to operate microelectronic die 102.
[0008] Microelectronic die 102 is held in place on at least one side by encapsulation material 106. Encapsulation material 106 includes at least one surface substantially planar to active surface 104. In one embodiment, active surface 104 is placed on a holding plate while encapsulation material 106 is disposed around microelectronic die 102. Encapsulation material 106 may extend over the back side (opposite active surface 104) of microelectronic die 102.
[0009] Microelectronic package core 108 may be included in first integrated circuit package element 100 to provide mechanical support and stability during the build-up process. Microelectronic package core 108 may have an opening in which microelectronic die 102 is disposed. In one embodiment microelectronic package core 108 is not included in first integrated circuit package element 100, and encapsulation material 106 may be used to a greater extent. [0010] First dielectric material layer 110 is disposed on at least a portion of active surface 104 and encapsulation material 106. Build-up layers 112 are subsequently disposed on first dielectric material layer 110 using well known processing methods.
[0011] Conductive traces 114 are disposed on first dielectric material layer 110 and build-up layers 112 and are in electrical contact with active surface 104. Conductive contacts 116 couple with conductive traces 114 and allow first integrated circuit package element 100 to be electrically coupled, for example by a solder connection, to second integrated circuit package element 200, which is described below. In one embodiment, conductive contacts 116 include solder bumps. In another embodiment, conductive contacts 116 include lands. [0012] Fig. 2 is a graphical illustration of a cross-sectional view of a second package element including a lesser density core or coreless substrate, in accordance with one example embodiment of the invention. As shown, second integrated circuit package element 200 includes one or more of substrate core 202, upper build-up layers 204, lower build-up layers 206, top surface 208, bottom surface 210, top conductive contacts 212, bottom conductive contacts 214, conductive traces 216, embedded components 218, top pitch 220, and bottom pitch 222.
[0013] Second integrated circuit package element 200 is coupled with first integrated circuit package element 100 to form an integrated circuit package. Second integrated circuit package element 200 may include a substrate core 202 to provide mechanical support. Well known processing methods may be utilized to form upper build-up layers 204 and lower build-up layers 206. In one embodiment, substrate core 202 is not included in second integrated circuit package element 200, and build-up layers alone, for example a multi-layer organic substrate, may be utilized.
[0014] Top conductive contacts 212 are disposed on top surface 208. Top conductive contacts 212 allow second integrated circuit package element 200 to be electrically coupled, for example by a solder connection, to first integrated circuit package element 100. In one embodiment, top conductive contacts 212 include solder bumps. In another embodiment, top conductive contacts 212 include lands.
[0015] Bottom conductive contacts 214 are disposed on bottom surface 208. Bottom conductive contacts 212 allow second integrated circuit package element 200 to be electrically coupled, for example by a socket connection, to other devices, for example a printed circuit board. In one embodiment, bottom conductive contacts 214 comprise a land grid array. In another embodiment, bottom conductive contacts 214 comprise a ball grid array. In another embodiment, bottom conductive contacts 214 comprise a pin grid array. [0016] Conductive traces 216 are routed through second integrated circuit package element 200 to conductively couple top conductive contacts 212 with bottom conductive contacts 214. [0017] Embedded components 218 may be included in the substrate of second integrated circuit package element 200. In one embodiment, embedded components 218 include at least one memory device. In another embodiment, embedded components 218 include at least one discrete component such as a capacitor, inductor, resistor, logic device or the like. [0018] Second integrated circuit package element 200 is designed to transmit signals from a top pitch 220 to a bottom pitch 222. In one embodiment, top pitch 220 is as fine as practicable to be able to form solder joint connections between first integrated circuit package element 100 and second integrated circuit package element 200. In one embodiment, top pitch 220 is from about 80 to about 130 micrometers. In one embodiment, bottom pitch 222 is from about 400 to about 800 micrometers.
[0019] Fig. 3 is a graphical illustration of an overhead view of an integrated circuit package, in accordance with one example embodiment of the invention. As shown, integrated circuit package 300 includes a plurality of first package elements 100 coupled with a second package element 200. While shown as including four first package elements 100, any number may be included. In one embodiment, sixteen first package elements 100 are coupled with a second package element 200. An underfill material 302, such as an epoxy, may be flowed between first elements 100 and second element 200. Underfill material 302 may substantially fill the space between the connections, for example solder joint connections (not shown), between conductive contacts 116 and conductive contacts 212. [0020] Fig. 4 is a block diagram of an example electronic appliance suitable for implementing an integrated circuit package, in accordance with one example embodiment of the invention. Electronic appliance 400 is intended to represent any of a wide variety of traditional and non-traditional electronic appliances, laptops, desktops, cell phones, wireless communication subscriber units, wireless communication telephony infrastructure elements, personal digital assistants, set-top boxes, or any electric appliance that would benefit from the teachings of the present invention. In accordance with the illustrated example embodiment, electronic appliance 400 may include one or more of processor(s) 402, memory controller 404, system memory 406, input/output controller 408, network controller 410, and input/output device(s) 412 coupled as shown in Fig. 4. Processor(s) 402, or other integrated circuit components of electronic appliance 400, may comprise a two element package as described previously as an embodiment of the present invention.
[0021] Processor(s) 402 may represent any of a wide variety of control logic including, but not limited to one or more of a microprocessor, a programmable logic device (PLD), programmable logic array (PLA), application specific integrated circuit (ASIC), a microcontroller, and the like, although the present invention is not limited in this respect. In one embodiment, processors(s) 402 are Intel® compatible processors. Processor(s) 402 may have an instruction set containing a plurality of machine level instructions that may be invoked, for example by an application or operating system.
[0022] Memory controller 404 may represent any type of chipset or control logic that interfaces system memory 406 with the other components of electronic appliance 400. In one embodiment, the connection between processor(s) 402 and memory controller 404 may be a point-to-point serial link. In another embodiment, memory controller 404 may be referred to as a north bridge.
[0023] System memory 406 may represent any type of memory device(s) used to store data and instructions that may have been or will be used by processor(s) 402. Typically, though the invention is not limited in this respect, system memory 406 will consist of dynamic random access memory (DRAM). In one embodiment, system memory 406 may consist of Rambus DRAM (RDRAM). In another embodiment, system memory 406 may consist of double data rate synchronous DRAM (DDRSDRAM).
[0024] Input/output (I/O) controller 408 may represent any type of chipset or control logic that interfaces I/O device(s) 412 with the other components of electronic appliance 400. In one embodiment, I/O controller 408 may be referred to as a south bridge. In another embodiment, I/O controller 408 may comply with the Peripheral Component Interconnect (PCI) Express™ Base Specification, Revision 1.0a, PCI Special Interest Group, released April 15, 2003.
[0025] Network controller 410 may represent any type of device that allows electronic appliance 400 to communicate with other electronic appliances or devices. In one embodiment, network controller 410 may comply with a The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 802.11b standard (approved September 16, 1999, supplement to ANSI/IEEE Std 802.11, 1999 Edition). In another embodiment, network controller 410 may be an Ethernet network interface card. [0026] Input/output (I/O) device(s) 412 may represent any type of device, peripheral or component that provides input to or processes output from electronic appliance 400. [0027] In the description above, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some of these specific details. In other instances, well-known structures and devices are shown in block diagram form.
[0028] Many of the methods are described in their most basic form but operations can be added to or deleted from any of the methods and information can be added or subtracted from any of the described messages without departing from the basic scope of the present invention. Any number of variations of the inventive concept is anticipated within the scope and spirit of the present invention. In this regard, the particular illustrated example embodiments are not provided to limit the invention but merely to illustrate it. Thus, the scope of the present invention is not to be determined by the specific examples provided above but only by the plain language of the following claims.

Claims

CLAIMSWhat is claimed is:
1. An apparatus comprising: a first element including: a microelectronic die having an active surface and at least one side, an encapsulation material adjacent said at least one microelectronic die side, wherein said encapsulation material includes at least one surface substantially planar to said microelectronic die active surface, a first dielectric material layer disposed on at least a portion of said microelectronic die active surface and said encapsulation material surface, a plurality of build-up layers disposed on said first dielectric material layer, and a plurality of conductive traces disposed on said first dielectric material layer and said build-up layers and in electrical contact with said microelectronic die active surface; and a second element coupled to said first element, the second element including a substrate having a plurality of dielectric material layers and conductive traces to conductively couple conductive contacts on a top surface with conductive contacts on a bottom surface, said conductive contacts on said top surface conductively coupled with said conductive traces of said first element.
2. The apparatus of claim 1, further comprising said first element including a microelectronic package core having an opening in which said microelectronic die is disposed.
3. The apparatus of claim 1, further comprising said second element including a substrate core.
4. The apparatus of claim 1, further comprising said second element including at least one memory component embedded between said top surface and said bottom surface.
5. The apparatus of claim 1, further comprising said second element including at least one discrete electronic component embedded between said top surface and said bottom surface.
6. The apparatus of claim 1, wherein said conductive contacts on said bottom surface of said second element comprise a land grid array.
7. The apparatus of claim 1, wherein said conductive contacts on said bottom surface of said second element comprise a ball grid array.
8. The apparatus of claim 1, wherein said conductive contacts on said top surface of said second element comprise bumps.
9. The apparatus of claim 1, further comprising epoxy underfill between said first element and said second element.
10. An electronic appliance comprising: a network controller; a system memory; and a processor, wherein the processor includes: a first element including: a microelectronic die having an active surface and at least one side, an encapsulation material adjacent said at least one microelectronic die side, wherein said encapsulation material includes at least one surface substantially planar to said microelectronic die active surface, a first dielectric material layer disposed on at least a portion of said microelectronic die active surface and said encapsulation material surface, a plurality of build-up layers disposed on said first dielectric material layer, and a plurality of conductive traces disposed on said first dielectric material layer and said build-up layers and in electrical contact with said microelectronic die active surface, and a second element coupled to said first element, the second element including a substrate having a plurality of dielectric material layers and conductive traces to conductively couple conductive contacts on a top surface with conductive contacts on a bottom surface, said conductive contacts on said top surface conductively coupled with said conductive traces of said first element.
11. The electronic appliance of claim 10, further comprising said second element including at least one memory component embedded between said top surface and said bottom surface.
12. The electronic appliance of claim 10, further comprising said second element including at least one discrete electronic component embedded between said top surface and said bottom surface.
13. The electronic appliance of claim 10, further comprising said first element including a microelectronic package core having an opening in which said microelectronic die is disposed.
14. The electronic appliance of claim 10, further comprising said second element including a substrate core.
15. The electronic appliance of claim 10, further comprising a plurality of first elements coupled with said second element.
16. An apparatus comprising: a plurality of first elements each including: a microelectronic die having an active surface and at least one side, an encapsulation material adjacent said at least one microelectronic die side, wherein said encapsulation material includes at least one surface substantially planar to said microelectronic die active surface, a first dielectric material layer disposed on at least a portion of said microelectronic die active surface and said encapsulation material surface, a plurality of build-up layers disposed on said first dielectric material layer, and a plurality of conductive traces disposed on said first dielectric material layer and said build-up layers and in electrical contact with said microelectronic die active surface; and a second element coupled to said plurality of first elements, the second element including a substrate having a plurality of dielectric material layers and conductive traces to conductively couple conductive contacts on a top surface with conductive contacts on a bottom surface, said conductive contacts on said top surface conductively coupled with said conductive traces of said plurality of first elements.
17. The apparatus of claim 16, wherein said plurality of first elements comprises four first elements.
18. The apparatus of claim 16, wherein said plurality of first elements comprises sixteen first elements.
19. The apparatus of claim 16, wherein said conductive contacts on said top surface of said second element comprise a pitch of from about 80 to about 130 micrometers.
20. The apparatus of claim 16, wherein said conductive contacts on said bottom surface of said second element comprise a pitch of from about 400 to about 800 micrometers.
21. The apparatus of claim 16, further comprising said plurality of first elements including a microelectronic package core having an opening in which said microelectronic die is disposed.
22. The apparatus of claim 16, further comprising said second element including a substrate core.
23. The apparatus of claim 16, further comprising said second element including at least one memory component embedded between said top surface and said bottom surface.
24. The apparatus of claim 16, further comprising said second element including at least one discrete electronic component embedded between said top surface and said bottom surface.
25. The apparatus of claim 16, wherein said conductive contacts on said bottom surface of said second element comprise a land grid array.
26. The apparatus of claim 16, wherein said conductive contacts on said bottom surface of said second element comprise a ball grid array.
27. The apparatus of claim 16, wherein said conductive contacts on said top surface of said second element comprise bumps.
28. The apparatus of claim 16, further comprising epoxy underfill between said plurality of first elements and said second element.
PCT/US2008/076654 2007-09-25 2008-09-17 Integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate WO2009042463A1 (en)

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DE112008002459.6T DE112008002459B4 (en) 2007-09-25 2008-09-17 Integrated circuit devices with high-density bumpless picture-up layers and a substrate with a reduced-density core or a coreless substrate
JP2010523204A JP2010538478A (en) 2007-09-25 2008-09-17 IC package with high density BLBU layer and low density or coreless substrate
CN200880106620.6A CN101802991B (en) 2007-09-25 2008-09-17 Integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate
KR1020107006459A KR101160405B1 (en) 2007-09-25 2008-09-17 Integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate

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