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WO2009037032A1 - Method for the lithographic production of nanostructures and/or microstructures, stamp and substrate - Google Patents

Method for the lithographic production of nanostructures and/or microstructures, stamp and substrate Download PDF

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Publication number
WO2009037032A1
WO2009037032A1 PCT/EP2008/059581 EP2008059581W WO2009037032A1 WO 2009037032 A1 WO2009037032 A1 WO 2009037032A1 EP 2008059581 W EP2008059581 W EP 2008059581W WO 2009037032 A1 WO2009037032 A1 WO 2009037032A1
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WO
WIPO (PCT)
Prior art keywords
substrate
substance
microstructure
nano
stamp
Prior art date
Application number
PCT/EP2008/059581
Other languages
German (de)
French (fr)
Inventor
Tjalf Pirk
Johanna May
Original Assignee
Robert Bosch Gmbh
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Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2009037032A1 publication Critical patent/WO2009037032A1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means

Definitions

  • the invention relates to a method for the lithographic production of nano- and / or microstructures on a substrate having a three-dimensional macro-surface according to the preamble of claim 1, a stamp for carrying out the method according to the preamble of claim 11 and a substrate 12 produced by the method.
  • Photolithography is a common method of semiconductor technology, in which a photoresist (so-called photoresist) is first applied to a substrate having a two-dimensional, i.e., a photoresist. plane, in particular a wafer is applied, wherein the photoresist is then chemically changed by means of a UV exposure through a mask at the exposed locations. Thereafter, the exposed substrate is dipped in a developing solution which peels off either the exposed photoresist regions (positive resist) or the unexposed photoresist regions (negative resist). The structured photoresist remains on the substrate, the maximum depth of the introduced structures depending on the height of the previously applied photoresist. Two-stage processes are feasible, but these processes are relatively expensive, since the lower photoresist layer must be insensitive to the exposure of the upper photoresist layer in order to prevent both layers from being patterned simultaneously.
  • NIL nanoimprint lithography
  • the invention is therefore based on the object of proposing a method with which a nano- and / or microstructured substrate having a three-dimensional macro-surface can be obtained. Furthermore, the object is to propose a suitable stamp for such a method and a substrate produced by such a method.
  • the invention is based on the idea of using nanostructures and / or microstructures on or in a substrate having a three-dimensional macro-surface adapted to the macro-surface of the substrate stamp, so a stamp, which also has a three-dimensional macro Surface which, at least in sections, is formed as a negative image of the three-dimensional macro-surface of the substrate, that is to say is congruent to the macro-surface of the substrate.
  • a stamp which also has a three-dimensional macro Surface which, at least in sections, is formed as a negative image of the three-dimensional macro-surface of the substrate, that is to say is congruent to the macro-surface of the substrate.
  • macro-surface are understood in a broadest sense, all surfaces that of at least approximately deviate exactly planar, ie two-dimensional, macro-surface structure, as used in previous lithographic processes, in particular as a ground Waf surface, is used.
  • a macro-surface is understood to mean a (macro-) structured surface in the millimeter and / or centimeter range.
  • a macro-surface is understood to mean a surface which has at least one step section of at least 10 ⁇ m in height.
  • the macrostructure has height differences that would cause focus loss in classical 2D lithography.
  • the substrate In order to be able to introduce nano- and / or microstructures into the substrate by means of the stamp, whose three-dimensional macro-surface is at least partially shaped congruent to the three-dimensional macro-surface of the substrate, the substrate must first, at least in the area in which the nano - And / or microstructures are to be introduced, coated with a substance to be structured.
  • the layer thickness of the substance is preferably thinner than the depth extent of the macro-surface of the substrate.
  • the application of the substance to be structured can be carried out, for example, by spraying the substrate with the substance or immersing the substrate in the substance.
  • the height of the applied substance layer determines the maximum depth of the nano and / or macrostructure to be introduced.
  • the substrate and the stamp are positioned relative to each other such that the negative three-dimensional macro-surface of the stamp is exactly aligned with the positive three-dimensional macro-surface of the substrate and the stamp and the substrate with respect to their macro-surface according to the key lock principle match.
  • a negative nano- and / or microstructure is provided on the three-dimensional macro-surface of the stamp. This can be produced for example by erosion, micro milling or casting, for example in PDMS.
  • the embossing of the nano and / or microstructure in the substance takes place by generating a relative movement between the punch and the substrate towards each other. This stamp movement is preferably carried out path-controlled.
  • the substance adapts to the negative nano- and / or microstructure of the stamp, so that a positive image of this negative nano- and / or microstructure in the substance as a nano- and / or microstructure is produced.
  • the method designed according to the concept of the invention is suitable, for example, for structuring three-dimensional circuit boards or for producing three-dimensional photomasks, in particular for photolithographic methods.
  • thermoplastic substance is used as the substance to be structured, to be applied to the substrate, that is to say a substance which can be plastically deformed by pressure and heat.
  • the substance is preferably a photoresist, more preferably PMMA.
  • thermosets or UV-polymerizable substances with the stamp being preferably made transparent to UV light in the case of UV-polymerizable substances.
  • the substance, in particular together with the substrate, heated before and / or during embossing is, preferably to a temperature at which a plastic deformation of the substance is possible.
  • this temperature is a glass transition temperature of the substance or an overlying temperature.
  • the substance, in particular together with the substrate is preferably cooled again, in particular to a temperature at which the substance is no longer plastically deformable.
  • the embossed nano- and / or microstructure is quasi "frozen.”
  • the cooling is still carried out while the stamp is pressed onto the substrate or into the substance, in order to avoid bleeding of the substance and thus destruction of the structures just introduced.
  • stamp is brought into contact with the substance before heating, preferably in such a way that no embossing takes place.
  • Embossing relative movement
  • the heating of the substance takes place, in particular together with the substrate, and / or the positioning of the stamp relative to the substrate and / or embossing in a vacuum atmosphere.
  • the stamp thus has a negative nano and / or microstructure, the different depth or Has height sections and / or different width sections.
  • the height of the substance in trenches of the nano- and / or microstructure can be reduced to fractions of the original layer thickness.
  • a further structuring of the substance takes place.
  • This structuring can be done, for example, additively, in particular by deposition, in particular vapor deposition, metallization or subtractive, in particular by etching trenches.
  • microfluidic structures can be introduced in a simple manner into the substrate prestructured by the embossing process or in the prestructured substance by etching trenches.
  • the method described can also be applied to substrates whose macro-surface is also formed three-dimensionally on the side opposite the patterning side by the substrate does not rest on a two-dimensional, planar support, but by a three-dimensional, preferably formed congruent to the contact surface of the substrate holder provided is.
  • the invention also leads to a stamp for carrying out the method described above.
  • the stamp is characterized by a three-dimensional macro surface provided with a negative nano and / or microstructure.
  • the stamp can be at least partially, in particular the structured region, formed of PDMS, in which case the negative nano and / or microstructure, for example, by casting the PDMS by means of a casting mold can be introduced. Additionally or alternatively, the negative nano and / or microstructures can be introduced by erosion or micro-milling.
  • the invention also leads to a substrate which has been provided with a nano and / or microstructure by means of the method described above.
  • the substrate may be a polymer which can serve as a mask for printed conductors by the structuring carried out according to the concept of the invention.
  • Fig. 2 the substrate of FIG. 1 with an applied, to be structured
  • FIG. 3 shows a stamp positioned relative to the substrate with a macro-surface which conforms to the macro-surface of the substrate and with a nano- and / or microstructure provided in the macro-surface during the embossing process and
  • FIG. 3 shows a stamp positioned relative to the substrate with a macro-surface which conforms to the macro-surface of the substrate and with a nano- and / or microstructure provided in the macro-surface during the embossing process
  • Fig. 4 a finished structured substrate.
  • a substrate 1 in this case a polymer, is shown.
  • the substrate 1 has a three-dimensional macro-surface 2 with a multiplicity of planes 3 a to 3 f, which are in different height positions, wherein the macroscopic Height difference between the individual levels 3a to 3f in the range of about 10 microns to about 500 microns. There are also height differences in the millimeter and / or centimeter range feasible.
  • a substance 4 to be structured in this case thermoplastic PMMA, is sprayed onto this three-dimensional macro-surface 2 under vacuum in a first method step.
  • the substance 4 can be applied by immersion.
  • the thickness extension of the substance 4 is (substantially) less than the height differences between the planes 3a to 3f (see FIG. 2).
  • a stamp 5 in this case made of PDMS, is positioned relative to the substrate 4 by adjusting the stamp 5 and / or the substrate 4 and brought into contact with the substrate 4 (not shown).
  • the stamp 5 has a three-dimensional macro-surface with planes 7a to 7f which can be seen from FIG. 3, wherein each plane 3a to 3f of the substrate 1 is assigned a plane 7a to 7f of the stamp.
  • the three-dimensional macro-surface 6 of the stamp 5 has a form-matching to the three-dimensional macro-surface 2 of the substrate 1 molding.
  • the substance 4 After contacting the stamp 5 with the substrate 1, the substance 4 is heated, in particular by placing the stamp 5 and the substrate 4 in a heating chamber, at a temperature above the glass transition temperature of the substance 4, ie at a temperature at which the substance 4 is plastically deformable. After reaching this temperature, punch 5 and substrate 1 are moved away from each other toward each other. In this case, the substance 4 is embossed with a negative nano and / or microstructure 8 provided on the three-dimensional macro-surface 6 of the stamp 5 (cf., Fig. 3), whereby a nanosensitive to the negative nano- and / or microstructure 8 is formed - And / or microstructure 9 is generated in the substance 4.
  • the cooling of the substance 4 takes place together with the stamp 5 and the substrate 1 to a temperature below the glass transition temperature of the substance 4, whereby the substance 4 hardens in the embossed form.
  • this is provided with a non-stick coating or consists of a non-adhesive material.
  • stamp 5 and substrate 1 are moved away from each other. Any residual substance remaining in the region of the depressions of the resulting nano- and / or microstructure 9 is removed by means of a short etching process. With the aid of plasma, the nano and / or microstructure 9 shown in FIG.
  • the nano- and / or microstructure 9 are arranged on levels of different levels three-dimensional macro-surface 2 of the substrate 1 extends.
  • the three-dimensional macro surface 2 of the substrate 1 was thus nano- and / or microstructured. If necessary, metallization and / or etching of trenches on the substance 4 or in the substance 4 and / or on the substrate 1 and / or in the substrate 1 can take place in a following step.

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
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Abstract

The invention relates to a method for the lithographic production of nanostructures and/or microstructures (9) on a substrate (1) having a three-dimensional macro-surface. The method is characterized by: Applying a substance (4) to be structured onto the substrate and positioning the substrate (1) relative to a stamp (5) with a three-dimensional macro-surface (6) that is at least in sections congruently shaped compared to the macro-surface (2) of the substrate (1), wherein said three-dimensional macro-surface is provided with a negative nanostructure and/or microstructure (8), and embossing the negative nanostructure and/or microstructure (8) of the stamp into the substance (4), thus creating the nanostructure and/or microstructure (9) in the substance (4). The invention further relates to a stamp (5) and to a substrate (1).

Description

Beschreibung description
Titeltitle
Verfahren zum lithographischen Erzeugen von Nano- und/oder Mikrostrukturen, Stempel sowie SubstratProcess for the lithographic production of nano- and / or microstructures, stamps and substrates
Stand der TechnikState of the art
Die Erfindung betrifft ein Verfahren zum lithographischen Erzeugen von Nano- und/oder Mikrostrukturen auf einem Substrat mit einer dreidimensionalen MakroOberfläche gemäß dem Oberbegriff des Anspruchs 1, einen Stempel zur Durchführung des Verfahrens gemäß dem Oberbegriff des Anspruchs 11 sowie ein mittels des Verfahrens hergestelltes Substrat 12.The invention relates to a method for the lithographic production of nano- and / or microstructures on a substrate having a three-dimensional macro-surface according to the preamble of claim 1, a stamp for carrying out the method according to the preamble of claim 11 and a substrate 12 produced by the method.
Bei der Fotolithographie handelt es sich um ein gängiges Verfahren der Halbleitertechnik, bei dem zunächst ein Fotolack (sogenannter Fotoresist) auf ein Substrat mit einer zweidimensionalen, d.h. ebenen, Oberfläche, insbesondere einen Wafer aufgetragen wird, wobei der Fotolack sodann mithilfe einer UV-Belichtung durch eine Maske an den belichteten Stellen chemisch verändert wird. Daraufhin wird das belichtete Substrat in eine Entwicklerlösung getaucht, die entweder die belichteten Fotolackregionen (Positivlack) oder die unbelichteten Fotolackregionen (Negativlack) ablöst. Auf dem Substrat bleibt der strukturierte Fotolack zurück, wobei die maximale Tiefe der eingebrachten Strukturen von der Höhe des zuvor aufgebrachten Fotolacks abhängt. Zweistufige Verfahren sind durchführbar, jedoch sind diese Verfahren vergleichsweise aufwendig, da die untere Fotolackschicht gegenüber der Belichtung der oberen Fotolackschicht unempfindlich sein muss, um zu verhindern, dass beide Schichten gleichzeitig strukturiert werden.Photolithography is a common method of semiconductor technology, in which a photoresist (so-called photoresist) is first applied to a substrate having a two-dimensional, i.e., a photoresist. plane, in particular a wafer is applied, wherein the photoresist is then chemically changed by means of a UV exposure through a mask at the exposed locations. Thereafter, the exposed substrate is dipped in a developing solution which peels off either the exposed photoresist regions (positive resist) or the unexposed photoresist regions (negative resist). The structured photoresist remains on the substrate, the maximum depth of the introduced structures depending on the height of the previously applied photoresist. Two-stage processes are feasible, but these processes are relatively expensive, since the lower photoresist layer must be insensitive to the exposure of the upper photoresist layer in order to prevent both layers from being patterned simultaneously.
Bei einem weiteren lithographischen Verfahren handelt es sich um die sogenannte Nanoimprint-Lithographie (NIL). Bei diesem Verfahren wird PMMA, welches auf ein Substrat mit einer zweidimensionalen Makro-Oberfläche aufgebracht wurde, mittels eines Stempels strukturiert. Der zur Anwendung kommende Stempel, dessen Makro- Oberfläche ebenfalls zweidimensional ist, kann beispielsweise mit dem sogenannten LIGA- Verfahren mit sehr feinen Strukturbreiten hergestellt werden.Another lithographic process is the so-called nanoimprint lithography (NIL). In this method, PMMA applied to a substrate having a two-dimensional macro surface is patterned by a punch. The stamp used, whose macro- Surface is also two-dimensional, can be prepared for example with the so-called LIGA process with very fine structure widths.
Bekannt ist es auch, eine dreidimensionale Makro-Oberfläche zunächst durch Aufbringen einer Planarisierungsschicht zu planarisieren, also in eine ebene, zweidimensionale Oberfläche umzuwandeln und diese dann zu strukturieren, wobei in diesem Fall eine zweidimensionale, strukturierte Makro-Oberfläche und nicht eine strukturierte dreidimensionale Makro-Oberfläche erhalten wird.It is also known to first planarize a three-dimensional macro-surface by applying a planarization layer, ie to convert it into a flat, two-dimensional surface and then to structure it, in which case a two-dimensional, structured macro-surface and not a structured three-dimensional macro-surface. Surface is obtained.
Offenbarung der ErfindungDisclosure of the invention
Technische AufgabeTechnical task
Der Erfindung liegt daher die Aufgabe zugrunde, ein Verfahren vorzuschlagen, mit dem ein nano- und/oder mikrostrukturiertes Substrat mit einer dreidimensionalen MakroOberfläche erhalten werden kann. Ferner besteht die Aufgabe darin, einen geeigneten Stempel für ein derartiges Verfahren sowie ein mit einem derartigen Verfahren hergestelltes Substrat vorzuschlagen.The invention is therefore based on the object of proposing a method with which a nano- and / or microstructured substrate having a three-dimensional macro-surface can be obtained. Furthermore, the object is to propose a suitable stamp for such a method and a substrate produced by such a method.
Technische LösungTechnical solution
Diese Aufgabe wird hinsichtlich des Verfahrens mit den Merkmalen des Anspruchs 1, hinsichtlich des Stempels mit den Merkmalen des Anspruchs 11 und hinsichtlich des Substrates mit den Merkmalen des Anspruchs 12 gelöst. Vorteilhafte Weiterbildungen der Erfindung sind in den Unteransprüchen angegeben. In den Rahmen der Erfindung fallen auch sämtliche Kombinationen aus zumindest zwei von in der Beschreibung, den Ansprüchen und/oder den Figuren offenbarten Merkmalen.This object is achieved in terms of the method having the features of claim 1, with regard to the stamp having the features of claim 11 and with regard to the substrate having the features of claim 12. Advantageous developments of the invention are specified in the subclaims. All combinations of at least two features disclosed in the description, the claims and / or the figures also fall within the scope of the invention.
Der Erfindung liegt der Gedanke zugrunde, zum Erzeugen von Nano- und/oder Mikrostrukturen auf bzw. in einem Substrat mit einer dreidimensionalen Makro-Oberfläche einen an die Makro-Oberfläche des Substrates angepassten Stempel zu verwenden, also einen Stempel, der ebenfalls eine dreidimensionale Makro-Oberfläche aufweist, die zumindest abschnittsweise als Negativabbild der dreidimensionalen MakroOberfläche des Substrates ausgebildet, also formkongruent zu der Makro-Oberfläche des Substrates beschaffen ist. Unter Makro-Oberfläche sind dabei in einem weitesten Sinn sämtliche Oberflächen zu verstehen, die von einer zumindest näherungsweise exakt ebenen, d.h. zweidimensionalen, Makro-Oberflächenstruktur abweichen, wie sie bei bisherigen Lithographieverfahren, insbesondere als geschliffene Waf er- Oberfläche, zum Einsatz kommt. Im engeren Sinn wird unter einer Makro-Oberfläche eine im Millimeter- und/oder Zentimeterbereich (makro-) strukturierte Oberfläche verstanden. In einem engsten Sinn wird unter einer Makrooberfläche eine Oberfläche verstanden, die mindestens einen Stufenabschnitt von mindestens 10 μm Höhe aufweist. Anders ausgedrückt, weist die Makrostruktur Höhenunterschiede auf, die bei der klassischen 2D- Lithographie zu einem Fokusverlust führen würden. Um mittels des Stempels, dessen dreidimensionale Makro-Oberfläche zumindest abschnittsweise formkongruent zur dreidimensionalen Makro-Oberfläche des Substrates ausgebildet ist, Nano- und/oder Mikrostrukturen in das Substrat einbringen zu können, muss das Substrat zunächst, zumindest in dem Bereich, in dem die Nano- und/oder Mikrostrukturen eingebracht werden sollen, mit einer zu strukturierenden Substanz beschichtet werden. Bevorzugt ist dabei die Schichtdicke der Substanz dünner als die Tiefenerstreckungen der MakroOberfläche des Substrates. Das Aufbringen der zu strukturierenden Substanz kann beispielsweise durch Besprühen des Substrates mit der Substanz oder Eintauchen des Substrates in die Substanz erfolgen. Die Höhe der aufgebrachten Substanzschicht entscheidet über die maximale Tiefe der einzubringenden Nano- und/oder Makrostruktur. Vor oder bevorzugt nach dem Aufbringen der zu strukturierenden Substanz auf das Substrat werden das Substrat und der Stempel relativ zueinander positioniert, derart, dass die negative dreidimensionale Makro-Oberfläche des Stempels exakt zu der positiven dreidimensionalen Makro-Oberfläche des Substrates ausgerichtet ist und der Stempel und das Substrat im Hinblick auf ihre Makro-Oberfläche nach dem Schlüssel- Schloss-Prinzip aufeinander passen. Um die Nano- und/oder Makrostrukturen in der zu strukturierenden Substanz erzeugen zu können, ist auf der dreidimensionalen MakroOberfläche des Stempels eine Negativ-Nano- und/oder Mikrostruktur vorgesehen. Diese kann beispielsweise durch Erodieren, Mikrofräsen oder auch Gießen, beispielsweise in PDMS, erzeugt werden. Nach dem relativen Ausrichten des Stempels und des Substrates zueinander erfolgt in einem weiteren Schritt das Prägen der Nano- und/oder Mikrostruktur in die Substanz durch Erzeugen einer Relativbewegung zwischen dem Stempel und dem Substrat aufeinander zu. Diese Stempelbewegung ist vorzugsweise weggesteuert ausgeführt. Bei dem eigentlichen Stempelvorgang (Prägevorgang) passt sich dabei die Substanz an die Negativ-Nano- und/oder Mikrostruktur des Stempels an, so dass ein positives Abbild dieser Negativ-Nano- und/oder Mikrostruktur in der Substanz als Nano- und/oder Mikrostruktur erzeugt wird. Das nach dem Konzept der Erfindung ausgestaltete Verfahren eignet sich beispielsweise zur Strukturierung dreidimensionaler Leiterplatten oder zum Herstellen dreidimensionaler Fotomasken, insbesondere für fotolithographische Verfahren.The invention is based on the idea of using nanostructures and / or microstructures on or in a substrate having a three-dimensional macro-surface adapted to the macro-surface of the substrate stamp, so a stamp, which also has a three-dimensional macro Surface which, at least in sections, is formed as a negative image of the three-dimensional macro-surface of the substrate, that is to say is congruent to the macro-surface of the substrate. Under macro-surface are understood in a broadest sense, all surfaces that of at least approximately deviate exactly planar, ie two-dimensional, macro-surface structure, as used in previous lithographic processes, in particular as a ground Waf surface, is used. In the narrower sense, a macro-surface is understood to mean a (macro-) structured surface in the millimeter and / or centimeter range. In a narrow sense, a macro-surface is understood to mean a surface which has at least one step section of at least 10 μm in height. In other words, the macrostructure has height differences that would cause focus loss in classical 2D lithography. In order to be able to introduce nano- and / or microstructures into the substrate by means of the stamp, whose three-dimensional macro-surface is at least partially shaped congruent to the three-dimensional macro-surface of the substrate, the substrate must first, at least in the area in which the nano - And / or microstructures are to be introduced, coated with a substance to be structured. In this case, the layer thickness of the substance is preferably thinner than the depth extent of the macro-surface of the substrate. The application of the substance to be structured can be carried out, for example, by spraying the substrate with the substance or immersing the substrate in the substance. The height of the applied substance layer determines the maximum depth of the nano and / or macrostructure to be introduced. Before or preferably after application of the substance to be structured on the substrate, the substrate and the stamp are positioned relative to each other such that the negative three-dimensional macro-surface of the stamp is exactly aligned with the positive three-dimensional macro-surface of the substrate and the stamp and the substrate with respect to their macro-surface according to the key lock principle match. In order to be able to produce the nano- and / or macrostructures in the substance to be structured, a negative nano- and / or microstructure is provided on the three-dimensional macro-surface of the stamp. This can be produced for example by erosion, micro milling or casting, for example in PDMS. After the relative alignment of the stamp and the substrate to each other in a further step, the embossing of the nano and / or microstructure in the substance takes place by generating a relative movement between the punch and the substrate towards each other. This stamp movement is preferably carried out path-controlled. In the actual stamping process (embossing process), the substance adapts to the negative nano- and / or microstructure of the stamp, so that a positive image of this negative nano- and / or microstructure in the substance as a nano- and / or microstructure is produced. The method designed according to the concept of the invention is suitable, for example, for structuring three-dimensional circuit boards or for producing three-dimensional photomasks, in particular for photolithographic methods.
In Weiterbildung der Erfindung ist mit Vorteil vorgesehen, dass als zu strukturierende, auf das Substrat aufzubringende Substanz eine thermoplastische Substanz verwendet wird, also eine Substanz, die sich durch Druck- und Wärmeeinwirkung plastisch verformen lässt. Vorzugsweise handelt es sich bei der Substanz um einen Fotolack, besonders bevorzugt um PMMA. Alternativ können auch Thermosets oder UV- polymerisierbare Substanzen eingesetzt werden, wobei bevorzugt bei UV- polymeri- sierbaren Substanzen der Stempel für UV-Licht transparent ausgebildet ist.In a development of the invention, it is advantageously provided that a thermoplastic substance is used as the substance to be structured, to be applied to the substrate, that is to say a substance which can be plastically deformed by pressure and heat. The substance is preferably a photoresist, more preferably PMMA. Alternatively, it is also possible to use thermosets or UV-polymerizable substances, with the stamp being preferably made transparent to UV light in the case of UV-polymerizable substances.
Um die Substanz mittels des dreidimensionalen Stempels vereinfacht nano- und/oder mikrostrukturieren zu können, ist in Weiterbildung der Erfindung, insbesondere bei Verwendung einer thermoplastischen Substanz, vorgesehen, dass die Substanz, insbesondere zusammen mit dem Substrat, vor und/oder während des Prägens erhitzt wird, vorzugsweise auf eine Temperatur, bei der eine plastische Verformung der Substanz möglich ist. Insbesondere handelt es sich bei dieser Temperatur um eine Glasübergangstemperatur der Substanz oder eine darüberliegende Temperatur. Nachdem die Nano- und/oder Mikrostruktur in die Substanz mittels des Stempels eingebracht wurde, wird bevorzugt die Substanz, insbesondere zusammen mit dem Substrat, wieder abgekühlt, insbesondere auf eine Temperatur, bei der die Substanz nicht mehr plastisch verformbar ist. Die eingeprägte Nano- und/oder Mikrostruktur wird quasi „eingefroren". Bevorzugt erfolgt das Abkühlen noch während der Stempel auf das Substrat bzw. in die Substanz eingepresst ist, um ein Verlaufen der Substanz und damit eine Zerstörung der gerade eingebrachten Strukturen zu vermeiden.In order to simplify nano- and / or microstructure of the substance by means of the three-dimensional stamp, it is provided in a further development of the invention, in particular when using a thermoplastic substance, that the substance, in particular together with the substrate, heated before and / or during embossing is, preferably to a temperature at which a plastic deformation of the substance is possible. In particular, this temperature is a glass transition temperature of the substance or an overlying temperature. After the nano- and / or microstructure has been introduced into the substance by means of the stamp, the substance, in particular together with the substrate, is preferably cooled again, in particular to a temperature at which the substance is no longer plastically deformable. The embossed nano- and / or microstructure is quasi "frozen." Preferably, the cooling is still carried out while the stamp is pressed onto the substrate or into the substance, in order to avoid bleeding of the substance and thus destruction of the structures just introduced.
Von besonderem Vorteil ist eine Ausführungsform, bei der der Stempel bereits vor dem Erhitzen mit der Substanz in Kontakt gebracht wird, vorzugsweise derart, dass noch keine Prägung erfolgt. Bevorzugt erfolgt das Prägen (Relativbewegung) erst nach Erreichen der gewünschten Prägetemperatur der Substanz.Of particular advantage is an embodiment in which the stamp is brought into contact with the substance before heating, preferably in such a way that no embossing takes place. Embossing (relative movement) preferably takes place only after the desired embossing temperature of the substance has been reached.
Von besonderem Vorteil ist eine Ausführungsform, bei der das Erhitzen der Substanz, insbesondere zusammen mit dem Substrat, und/oder das Positionieren des Stempels relativ zu dem Substrat und/oder das Prägen in einer Vakuumatmosphäre erfolgt. Besonders bevorzugt ist eine Ausführungsform, bei der mittels des Stempels unterschiedlich tiefe und/oder breite Nano- und/oder Mikrostrukturen in die Substanz eingebracht werden können, der Stempel also eine Negativ-Nano- und/oder Mikrostruktur aufweist, die unterschiedliche Tiefen- bzw. Höhenabschnitte und/oder unterschiedliche Breitenabschnitte aufweist.Of particular advantage is an embodiment in which the heating of the substance takes place, in particular together with the substrate, and / or the positioning of the stamp relative to the substrate and / or embossing in a vacuum atmosphere. Particularly preferred is an embodiment in which by means of the punch differently deep and / or wide nano and / or microstructures can be introduced into the substance, the stamp thus has a negative nano and / or microstructure, the different depth or Has height sections and / or different width sections.
Mittels des Stempels lässt sich die Höhe der Substanz in Gräben der Nano- und/oder Mikrostruktur auf Bruchteile der ursprünglichen Schichtdicke reduzieren. Für eine Vielzahl von Anwendungen ist es vorteilhaft, in diesen, stark reduzierten Höhenbereichen der Substanz, die Substanz vollständig von dem Substrat zu entfernen, so dass die eigentliche Substratoberfläche zum Vorschein kommt. Dies kann beispielsweise durch einen kurzen Ätzschritt, insbesondere unter der Verwendung von Plasma, erfolgen.By means of the stamp, the height of the substance in trenches of the nano- and / or microstructure can be reduced to fractions of the original layer thickness. For a large number of applications, it is advantageous to completely remove the substance from the substrate in these, greatly reduced height ranges of the substance, so that the actual substrate surface is revealed. This can be done, for example, by a short etching step, in particular using plasma.
Um die Komplexität der Nano- und/oder Mikrostruktur weiter zu erhöhen, ist in Weiterbildung der Erfindung mit Vorteil vorgesehen, dass nach dem Prägen, insbesondere nach dem teilweisen Entfernen der Substanz, vorzugsweise mittels eines kurzen Ätzschrittes, eine weitere Strukturierung der Substanz erfolgt. Diese Strukturierung kann beispielsweise additiv, insbesondere durch Aufbringen, insbesondere Aufdampfen, einer Metallisierung erfolgen oder subtraktiv, insbesondere durch Ätzen von Gräben. Vorzugsweise durch das Ätzen von Gräben können beispielsweise mikrofluidische Strukturen auf einfache Weise in dem durch den Prägeprozess vorstrukturierten Substrat bzw. in der vorstrukturierten Substanz eingebracht werden.To further increase the complexity of the nano- and / or microstructure, it is advantageously provided in a further development of the invention that after embossing, in particular after the partial removal of the substance, preferably by means of a short etching step, a further structuring of the substance takes place. This structuring can be done, for example, additively, in particular by deposition, in particular vapor deposition, metallization or subtractive, in particular by etching trenches. For example, microfluidic structures can be introduced in a simple manner into the substrate prestructured by the embossing process or in the prestructured substance by etching trenches.
Das beschriebene Verfahren lässt sich auch bei Substraten anwenden, deren MakroOberfläche auch auf der zur strukturierenden Seite gegenüberliegenden Seite dreidimensional ausgebildet ist, indem das Substrat nicht auf einer zweidimensionalen, ebenen Halterung aufliegt, sondern indem eine dreidimensionale, vorzugsweise formkongruent zur Anlagefläche des Substrates ausgebildete Halterung vorgesehen ist.The method described can also be applied to substrates whose macro-surface is also formed three-dimensionally on the side opposite the patterning side by the substrate does not rest on a two-dimensional, planar support, but by a three-dimensional, preferably formed congruent to the contact surface of the substrate holder provided is.
Die Erfindung führt auch auf einen Stempel zur Durchführung des zuvor beschriebenen Verfahrens. Der Stempel ist gekennzeichnet durch eine dreidimensionale MakroOberfläche, die mit einer Negativ-Nano- und/oder Mikrostruktur versehen ist. Wie eingangs erwähnt, kann der Stempel zumindest teilweise, insbesondere der strukturierte Bereich, aus PDMS ausgebildet werden, wobei in diesem Fall die Negativ-Nano- und/oder Mikrostruktur beispielsweise durch Gießen des PDMS mittels einer Gießform einbringbar ist. Zusätzlich oder alternativ können die Negativ-Nano- und/oder Mikrostrukturen durch Erodieren oder Mikrofräsen eingebracht werden.The invention also leads to a stamp for carrying out the method described above. The stamp is characterized by a three-dimensional macro surface provided with a negative nano and / or microstructure. As mentioned above, the stamp can be at least partially, in particular the structured region, formed of PDMS, in which case the negative nano and / or microstructure, for example, by casting the PDMS by means of a casting mold can be introduced. Additionally or alternatively, the negative nano and / or microstructures can be introduced by erosion or micro-milling.
Die Erfindung führt auch auf ein Substrat, welches mittels des zuvor beschriebenen Verfahrens mit einer Nano- und/oder Mikrostruktur versehen wurde. Beispielsweise kann es sich bei dem Substrat um ein Polymer handeln, das durch die nach dem Konzept der Erfindung durchgeführte Strukturierung als Maske für Leiterbahnen dienen kann. Ebenso ist es mittels des Verfahrens möglich, Fotomasken, insbesondere für fotolithographische Verfahren, herzustellen.The invention also leads to a substrate which has been provided with a nano and / or microstructure by means of the method described above. By way of example, the substrate may be a polymer which can serve as a mask for printed conductors by the structuring carried out according to the concept of the invention. Likewise, it is possible by means of the method to produce photomasks, in particular for photolithographic processes.
Kurze Beschreibung der ZeichnungenBrief description of the drawings
Weitere Vorteile, Merkmale und Einzelheiten der Erfindung ergeben sich aus der nachfolgenden Beschreibung bevorzugter Ausführungsbeispiele sowie anhand der Zeichnungen. Diese zeigen in:Further advantages, features and details of the invention will become apparent from the following description of preferred embodiments and from the drawings. These show in:
Fig. 1: ein Substrat mit einer dreidimensionalen Makro-Oberfläche,1: a substrate with a three-dimensional macro-surface,
Fig. 2: das Substrat gemäß Fig. 1 mit einer aufgebrachten, zu strukturierendenFig. 2: the substrate of FIG. 1 with an applied, to be structured
Substanz,Substance,
Fig. 3: einen relativ zu dem Substrat positionierten Stempel mit einer zur Makro-Oberfläche des Substrates formkongruenten Makro-Oberfläche und mit in der Makro-Oberfläche vorgesehener Nano- und/oder Mikrostruktur während des Prägevorgangs und3 shows a stamp positioned relative to the substrate with a macro-surface which conforms to the macro-surface of the substrate and with a nano- and / or microstructure provided in the macro-surface during the embossing process and FIG
Fig. 4: ein fertig strukturiertes Substrat.Fig. 4: a finished structured substrate.
Ausführungsformen der ErfindungEmbodiments of the invention
In den Figuren sind gleiche Bauteile und Bauteile mit der gleichen Funktion mit den gleichen Bezugszeichen gekennzeichnet.In the figures, the same components and components with the same function with the same reference numerals.
In Fig. 1 ist ein Substrat 1, in diesem Fall ein Polymer, gezeigt. Das Substrat 1 weist eine dreidimensionale Makro-Oberfläche 2 mit einer Vielzahl von Ebenen 3a bis 3f auf, die sich in unterschiedlichen Höhenpositionen befinden, wobei die Makro- Höhendifferenz zwischen den einzelnen Ebenen 3a bis 3f im Bereich von etwa 10 μm bis etwa 500 μm liegt. Es sind auch Höhenunterschiede im Millimeter- und/oder Zentimeterbereich realisierbar.In Fig. 1, a substrate 1, in this case a polymer, is shown. The substrate 1 has a three-dimensional macro-surface 2 with a multiplicity of planes 3 a to 3 f, which are in different height positions, wherein the macroscopic Height difference between the individual levels 3a to 3f in the range of about 10 microns to about 500 microns. There are also height differences in the millimeter and / or centimeter range feasible.
Auf diese dreidimensionale Makro-Oberfläche 2 wird unter Vakuum in einem ersten Verfahrensschritt eine zu strukturierende Substanz 4, in diesem Fall thermoplastisches PMMA, aufgesprüht, alternativ kann die Substanz 4 durch Eintauchen aufgebracht werden. Die Dickenerstreckung der Substanz 4 ist dabei (wesentlich) geringer als die Höhenunterschiede zwischen den Ebenen 3a bis 3f (vergleiche Fig. 2).A substance 4 to be structured, in this case thermoplastic PMMA, is sprayed onto this three-dimensional macro-surface 2 under vacuum in a first method step. Alternatively, the substance 4 can be applied by immersion. The thickness extension of the substance 4 is (substantially) less than the height differences between the planes 3a to 3f (see FIG. 2).
In einem weiteren Verfahrensschritt wird ein Stempel 5, in diesem Fall aus PDMS, relativ zu dem Substrat 4 durch Verstellen des Stempels 5 und/oder des Substrates 4 positioniert und mit dem Substrat 4 in Kontakt gebracht (nicht gezeigt). Der Stempel 5 weist eine aus Fig. 3 ersichtliche dreidimensionale Makro-Oberfläche mit Ebenen 7a bis 7f auf, wobei jeder Ebene 3a bis 3f des Substrates 1 eine Ebene 7a bis 7f des Stempels zugeordnet ist. Die dreidimensionale Makro-Oberfläche 6 des Stempels 5 hat eine zur dreidimensionalen Makro-Oberfläche 2 des Substrates 1 formkongruente Ausformung. Nach dem Inkontaktbringen des Stempels 5 mit dem Substrat 1 erfolgt eine Erwärmung der Substanz 4, insbesondere durch Anordnung des Stempels 5 und des Substrates 4 in einer Heizkammer, auf eine Temperatur oberhalb der Glasumwandlungstemperatur der Substanz 4, also auf eine Temperatur, bei der die Substanz 4 plastisch verformbar ist. Nach Erreichen dieser Temperatur werden Stempel 5 und Substrat 1 weggesteuert aufeinander zubewegt. Dabei wird die Substanz 4 mit einer auf der dreidimensionalen Makro-Oberfläche 6 des Stempels 5 vorgesehenen Negativ-Nano- und/oder Mikrostruktur 8 geprägt (vgl. Fig. 3), wodurch eine zur Negativ-Nano- und/oder Mikrostruktur 8 formkongruente Nano- und/oder Mikrostruktur 9 in der Substanz 4 erzeugt wird.In a further method step, a stamp 5, in this case made of PDMS, is positioned relative to the substrate 4 by adjusting the stamp 5 and / or the substrate 4 and brought into contact with the substrate 4 (not shown). The stamp 5 has a three-dimensional macro-surface with planes 7a to 7f which can be seen from FIG. 3, wherein each plane 3a to 3f of the substrate 1 is assigned a plane 7a to 7f of the stamp. The three-dimensional macro-surface 6 of the stamp 5 has a form-matching to the three-dimensional macro-surface 2 of the substrate 1 molding. After contacting the stamp 5 with the substrate 1, the substance 4 is heated, in particular by placing the stamp 5 and the substrate 4 in a heating chamber, at a temperature above the glass transition temperature of the substance 4, ie at a temperature at which the substance 4 is plastically deformable. After reaching this temperature, punch 5 and substrate 1 are moved away from each other toward each other. In this case, the substance 4 is embossed with a negative nano and / or microstructure 8 provided on the three-dimensional macro-surface 6 of the stamp 5 (cf., Fig. 3), whereby a nanosensitive to the negative nano- and / or microstructure 8 is formed - And / or microstructure 9 is generated in the substance 4.
Daraufhin erfolgt das Abkühlen der Substanz 4 zusammen mit dem Stempel 5 und dem Substrat 1 auf eine Temperatur unterhalb der Glasumwandlungstemperatur der Substanz 4, wodurch die Substanz 4 in der geprägten Form aushärtet. Um zu vermeiden, dass die Substanz 4 an dem Stempel 5 anhaftet, ist dieser mit einer Antihaftbe- schichtung versehen oder besteht aus einem nicht-haftenden Material. Nach Erreichen der gewünschten Kühltemperatur werden Stempel 5 und Substrat 1 voneinander wegbewegt. Eventuell noch vorhandene Substanzreste im Bereich der Vertiefungen der sich ergebenden Nano- und/oder Mikrostruktur 9 werden mittels eines kurzen Ätzvor- gangs unter Einsatz von Plasma entfernt, so dass sich die in Fig. 4 gezeigte Nano- und/oder Mikrostruktur 9 in der ausgehärteten Substanz 4 auf dem Substrat 1 ergibt, wobei sich die Nano- und/oder Mikrostruktur 9 über verschieden hoch angeordnete Ebenen der dreidimensionalen Makro-Oberfläche 2 des Substrates 1 erstreckt. Die dreidimensionale Makrooberfläche 2 des Substrates 1 wurde also nano- und/oder mikrostrukturiert. Bei Bedarf kann in einem darauffolgenden Schritt noch eine Metallisierung und/oder das Ätzen von Gräben auf die Substanz 4 bzw. in die Substanz 4 und/oder auf das Substrat 1 und/oder in das Substrat 1 erfolgen. Thereafter, the cooling of the substance 4 takes place together with the stamp 5 and the substrate 1 to a temperature below the glass transition temperature of the substance 4, whereby the substance 4 hardens in the embossed form. In order to avoid that the substance 4 adheres to the stamp 5, this is provided with a non-stick coating or consists of a non-adhesive material. After reaching the desired cooling temperature stamp 5 and substrate 1 are moved away from each other. Any residual substance remaining in the region of the depressions of the resulting nano- and / or microstructure 9 is removed by means of a short etching process. With the aid of plasma, the nano and / or microstructure 9 shown in FIG. 4 in the hardened substance 4 on the substrate 1 results, whereby the nano- and / or microstructure 9 are arranged on levels of different levels three-dimensional macro-surface 2 of the substrate 1 extends. The three-dimensional macro surface 2 of the substrate 1 was thus nano- and / or microstructured. If necessary, metallization and / or etching of trenches on the substance 4 or in the substance 4 and / or on the substrate 1 and / or in the substrate 1 can take place in a following step.

Claims

Ansprüche claims
1. Verfahren zum lithographischen Erzeugen von Nano- und/oder Mikrostrukturen (9) auf einem Substrat (1) mit einer dreidimensionalen Makro-Oberfläche (2), gekennzeichnet durch:A process for the lithographic production of nano- and / or microstructures (9) on a substrate (1) having a three-dimensional macro-surface (2), characterized by:
• Aufbringen einer zu strukturierenden Substanz (4) auf das Substrat (1);Applying a substance to be structured (4) to the substrate (1);
• Positionieren des Substrates (1) relativ zu einem Stempel (5) mit einer zumindest abschnittsweise zur Makro-Oberfläche (2) des Substrates (1) formkongruenten dreidimensionalen Makro-Oberfläche (6), die mit einer Negativ- Nano-und/oder Mikrostruktur (8) versehen ist;Positioning of the substrate (1) relative to a stamp (5) with a three-dimensional macro-surface (6) which conforms in shape to the macro-surface (2) of the substrate (1) and which has a negative nano and / or microstructure (8) is provided;
• Prägen der Negativ-Nano- und/oder Mikrostruktur (8) des Stempels (5) in die Substanz (4) und dadurch Erzeugen der Nano-und/oder Mikrostruktur (9) in der Substanz (4).Embossing the negative nano and / or microstructure (8) of the stamp (5) in the substance (4) and thereby generating the nano and / or microstructure (9) in the substance (4).
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass als zu strukturierende Substanz (4) eine thermoplastische Substanz, insbesondere ein Fotolack, vorzugsweise PMMA, verwendet wird.2. The method according to claim 1, characterized in that as a substance to be structured (4) a thermoplastic substance, in particular a photoresist, preferably PMMA, is used.
3. Verfahren nach einem der Ansprüche 1 oder 2, dadurch gekennzeichnet, dass die Substanz(4), insbesondere zusammen mit dem Substrat (1), vor und/oder während des Prägevorgangs auf eine Verformungstemperatur erhitzt wird, insbesondere auf eine Glasübergangstemperatur der Substanz (4), oder darüber, und vorzugsweise nach dem Prägevorgang wieder unter die Verformungstemperatur abgekühlt wird, insbesondere unter die Glasübergangstemperatur der Substanz (4).3. The method according to any one of claims 1 or 2, characterized in that the substance (4), in particular together with the substrate (1), before and / or during the embossing process is heated to a deformation temperature, in particular to a glass transition temperature of the substance ( 4), or above, and preferably after the embossing process again cooled below the deformation temperature, in particular below the glass transition temperature of the substance (4).
4. Verfahren nach Anspruch 3, dadurch gekennzeichnet, dass der Stempel (5) vor oder während des Erhitzens mit dem Substrat (1) in Kontakt gebracht wird.4. The method according to claim 3, characterized in that the punch (5) before or during the heating with the substrate (1) is brought into contact.
5. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Prägen und/oder das Erhitzen und/oder das Relativpositionieren zwischen Stempel (5) und Substrat (1) unter Vakuum erfolgt. 5. The method according to any one of the preceding claims, characterized in that the embossing and / or heating and / or the relative positioning between punch (5) and substrate (1) takes place under vacuum.
6. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass ein Stempel (5) mit einer Negativ-Nano- und/oder Mikrostruktur (8) verwendet wird, die unterschiedlich tiefe und/oder breite Strukturabschnitte aufweist.6. The method according to any one of the preceding claims, characterized in that a stamp (5) is used with a negative nano and / or microstructure (8) having different depth and / or width structure sections.
7. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass nach dem Prägen eine teilweise Entfernung der Substanz (4), insbesondere in tiefen Nano-und/oder Mikrostrukturbereichen, insbesondere durch Ätzen, vorzugsweise mittels Plasma, erfolgt.7. The method according to any one of the preceding claims, characterized in that after embossing, a partial removal of the substance (4), in particular in deep nano and / or microstructure regions, in particular by etching, preferably by means of plasma occurs.
8. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das nach dem Prägen, insbesondere nach dem teilweisen Entfernen der Substanz (4), eine weitere Strukturierung der Substanz (4) erfolgt.8. The method according to any one of the preceding claims, characterized in that after embossing, in particular after the partial removal of the substance (4), a further structuring of the substance (4).
9. Verfahren nach Anspruch 8, dadurch gekennzeichnet, dass die weitere Strukturierung additiv, insbesondere durch, vorzugsweise partielles, Aufbringen einer Metallisierung und/oder subtraktiv, insbesondere Ätzen von Gräben, vorzugsweise zum Erzeugen mikrofluidischer Strukturen, durchgeführt wird.9. The method according to claim 8, characterized in that the further structuring is carried out additively, in particular by, preferably partial, application of a metallization and / or subtractive, in particular etching of trenches, preferably for producing microfluidic structures.
10. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Substrat (1) während des Prägens von einer Halterung mit einer an die Form des Substrates (1) angepassten dreidimensionalen Makro-Oberfläche gestützt wird.10. The method according to any one of the preceding claims, characterized in that the substrate (1) is supported during the embossing of a holder with a to the shape of the substrate (1) adapted three-dimensional macro-surface.
11. Stempel (5) zum Durchführen eines Verfahrens nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Stempel (5) eine dreidimensionale Makro-Oberfläche (6) mit einer Negativ-Nano- und/oder Mikrostruktur (8) aufweist.11. punch (5) for performing a method according to any one of the preceding claims, characterized in that the punch (5) has a three-dimensional macro-surface (6) with a negative nano and / or microstructure (8).
12. Substrat (1) mit einer dreidimensionalen Makro-Oberfläche (2), auf die mittels eines Verfahrens nach einem der Ansprüche 1 bis 10 eine Nano- und/oder Mikrostruktur (9) eingebracht wurde. 12. substrate (1) having a three-dimensional macro-surface (2), to which by means of a method according to one of claims 1 to 10, a nano and / or microstructure (9) has been introduced.
PCT/EP2008/059581 2007-09-18 2008-07-22 Method for the lithographic production of nanostructures and/or microstructures, stamp and substrate WO2009037032A1 (en)

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