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WO2009034953A1 - Thin film transistor - Google Patents

Thin film transistor Download PDF

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Publication number
WO2009034953A1
WO2009034953A1 PCT/JP2008/066198 JP2008066198W WO2009034953A1 WO 2009034953 A1 WO2009034953 A1 WO 2009034953A1 JP 2008066198 W JP2008066198 W JP 2008066198W WO 2009034953 A1 WO2009034953 A1 WO 2009034953A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
layer
layers
disclosed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/066198
Other languages
French (fr)
Japanese (ja)
Inventor
Koki Yano
Kazuyoshi Inoue
Shigekazu Tomai
Masashi Kasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to JP2009532177A priority Critical patent/JPWO2009034953A1/en
Publication of WO2009034953A1 publication Critical patent/WO2009034953A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Disclosed is a thin film transistor comprising an oxide semiconductor film wherein a crystalline layer and an amorphous layer are arranged in layers.
PCT/JP2008/066198 2007-09-10 2008-09-09 Thin film transistor Ceased WO2009034953A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009532177A JPWO2009034953A1 (en) 2007-09-10 2008-09-09 Thin film transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-233942 2007-09-10
JP2007233942 2007-09-10

Publications (1)

Publication Number Publication Date
WO2009034953A1 true WO2009034953A1 (en) 2009-03-19

Family

ID=40451960

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066198 Ceased WO2009034953A1 (en) 2007-09-10 2008-09-09 Thin film transistor

Country Status (3)

Country Link
JP (1) JPWO2009034953A1 (en)
TW (1) TWI453915B (en)
WO (1) WO2009034953A1 (en)

Cited By (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010131310A1 (en) * 2009-05-13 2010-11-18 パナソニック株式会社 Semiconductor memory cell and method for manufacturing same
JP2011023695A (en) * 2009-07-15 2011-02-03 Samsung Mobile Display Co Ltd Organic electroluminescence display device and method of manufacturing the same
JP2011029635A (en) * 2009-07-03 2011-02-10 Semiconductor Energy Lab Co Ltd Method of manufacturing display device having transistor
JP2011029628A (en) * 2009-06-30 2011-02-10 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
JP2011049549A (en) * 2009-07-31 2011-03-10 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
JP2011049539A (en) * 2009-07-31 2011-03-10 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
JP2011066070A (en) * 2009-09-15 2011-03-31 Idemitsu Kosan Co Ltd Polycrystalline thin film, deposition method of the same, and thin film transistor
JP2011077510A (en) * 2009-09-04 2011-04-14 Semiconductor Energy Lab Co Ltd Transistor and display device
JP2011086923A (en) * 2009-09-16 2011-04-28 Semiconductor Energy Lab Co Ltd Transistor and display device
JP2011091375A (en) * 2009-09-24 2011-05-06 Semiconductor Energy Lab Co Ltd Oxide semiconductor film and semiconductor device
JP2011100979A (en) * 2009-10-08 2011-05-19 Semiconductor Energy Lab Co Ltd Oxide semiconductor film and semiconductor device
JP2011103452A (en) * 2009-10-14 2011-05-26 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
JP2011109032A (en) * 2009-11-20 2011-06-02 Semiconductor Energy Lab Co Ltd Thin film transistor
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
WO2011065329A1 (en) * 2009-11-27 2011-06-03 株式会社日立製作所 Oxide semiconductor device and method for manufacturing same
WO2011065216A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
WO2011070900A1 (en) * 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2011119718A (en) * 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd Semiconductor device and method of manufacturing the same
JP2011123986A (en) * 2009-11-13 2011-06-23 Semiconductor Energy Lab Co Ltd Semiconductor device and method for driving the same
WO2011074506A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2011129895A (en) * 2009-11-20 2011-06-30 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
WO2011081009A1 (en) * 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2011139054A (en) * 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
JP2011146713A (en) * 2010-01-15 2011-07-28 Samsung Electronics Co Ltd Display substrate
JP2011181802A (en) * 2010-03-03 2011-09-15 Fujifilm Corp Method of manufacturing igzo-based amorphous oxide semiconductor film and method of manufacturing field effect transistor using the same
CN102194887A (en) * 2010-03-04 2011-09-21 索尼公司 Thin film transistor, its manufacture method and display device
WO2011135987A1 (en) * 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2011237418A (en) * 2010-04-16 2011-11-24 Semiconductor Energy Lab Co Ltd Current measurement method, semiconductor device inspection method, semiconductor device and characteristic evaluation circuit
JP2011248356A (en) * 2010-04-28 2011-12-08 Semiconductor Energy Lab Co Ltd Semiconductor display device and driving method thereof
JP2012015491A (en) * 2010-06-04 2012-01-19 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
JP2012015436A (en) * 2010-07-05 2012-01-19 Sony Corp Thin film transistor and display device
JP2012084863A (en) * 2010-09-13 2012-04-26 Semiconductor Energy Lab Co Ltd Method for manufacturing crystalline oxide semiconductor film
JP2012099661A (en) * 2010-11-02 2012-05-24 Idemitsu Kosan Co Ltd Method of manufacturing oxide semiconductor
WO2012074046A1 (en) * 2010-12-02 2012-06-07 株式会社神戸製鋼所 Wiring structure and sputtering target
WO2012144557A1 (en) * 2011-04-22 2012-10-26 株式会社神戸製鋼所 Thin film transistor structure, and thin film transistor and display device provided with said structure
KR20120120062A (en) * 2011-04-22 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing thereof
KR20120125272A (en) * 2010-01-15 2012-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20120127250A (en) * 2011-05-11 2012-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of semiconductor device
JP2012248868A (en) * 2009-11-28 2012-12-13 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2012256824A (en) * 2010-10-29 2012-12-27 Semiconductor Energy Lab Co Ltd Memory device
JPWO2011043300A1 (en) * 2009-10-09 2013-03-04 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP2013047849A (en) * 2009-09-04 2013-03-07 Semiconductor Energy Lab Co Ltd Semiconductor device
KR20130033308A (en) * 2011-09-26 2013-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP2013131765A (en) * 2009-10-08 2013-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing method
JP2013149965A (en) * 2011-12-23 2013-08-01 Semiconductor Energy Lab Co Ltd Semiconductor device
US8546182B2 (en) 2008-11-28 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103489881A (en) * 2011-12-31 2014-01-01 京东方科技集团股份有限公司 Thin film transistor array substrate, manufacturing method of thin film transistor array substrate as well as display device
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014013917A (en) * 2012-06-06 2014-01-23 Kobe Steel Ltd Thin film transistor
WO2014025002A1 (en) * 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP2014029994A (en) * 2012-06-27 2014-02-13 Semiconductor Energy Lab Co Ltd Semiconductor device and semiconductor device manufacturing method
US8669556B2 (en) 2010-12-03 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8704219B2 (en) 2010-03-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2014078704A (en) * 2012-09-24 2014-05-01 Semiconductor Energy Lab Co Ltd Display
KR101396102B1 (en) * 2009-12-04 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101400919B1 (en) 2010-01-26 2014-05-30 주성엔지니어링(주) Thin film transistor and method of manufacturing the same
JP2015015488A (en) * 2009-10-30 2015-01-22 株式会社半導体エネルギー研究所 Semiconductor device
US8945982B2 (en) 2010-04-23 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2015028837A (en) * 2010-02-05 2015-02-12 株式会社半導体エネルギー研究所 Semiconductor device
JP2015043428A (en) * 2009-11-06 2015-03-05 株式会社半導体エネルギー研究所 Semiconductor device
JP2015092687A (en) * 2010-01-20 2015-05-14 株式会社半導体エネルギー研究所 Semiconductor device
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JP2015092624A (en) * 2009-06-30 2015-05-14 株式会社半導体エネルギー研究所 Semiconductor device
JP2015109476A (en) * 2009-08-07 2015-06-11 株式会社半導体エネルギー研究所 Semiconductor device
US9059047B2 (en) 2010-04-09 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015111705A (en) * 2010-02-12 2015-06-18 株式会社半導体エネルギー研究所 Method of manufacturing transistor
JP2015111715A (en) * 2009-12-11 2015-06-18 株式会社半導体エネルギー研究所 Semiconductor device
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
US9130067B2 (en) 2008-10-08 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Display device
US9136389B2 (en) 2008-10-24 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, thin film transistor, and display device
JP2015165583A (en) * 2009-09-24 2015-09-17 株式会社半導体エネルギー研究所 Method of manufacturing semiconductor device
JP2015165578A (en) * 2009-06-30 2015-09-17 株式会社半導体エネルギー研究所 Manufacturing method for semiconductor device
JP2015173278A (en) * 2009-11-27 2015-10-01 株式会社半導体エネルギー研究所 Semiconductor device
JP2015173286A (en) * 2009-12-18 2015-10-01 株式会社半導体エネルギー研究所 Semiconductor device
CN104966738A (en) * 2015-04-13 2015-10-07 友达光电股份有限公司 Active element structure and manufacturing method thereof
JP2015181163A (en) * 2010-03-05 2015-10-15 株式会社半導体エネルギー研究所 Method for fabricating oxide semiconductor film
US9171957B2 (en) 2012-01-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9184245B2 (en) 2012-08-10 2015-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US9202927B2 (en) 2010-11-30 2015-12-01 Seminconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9218966B2 (en) 2011-10-14 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2016028432A (en) * 2009-08-07 2016-02-25 株式会社半導体エネルギー研究所 Method of manufacturing semiconductor device
US9281358B2 (en) 2010-11-30 2016-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2016075945A (en) * 2010-03-31 2016-05-12 株式会社半導体エネルギー研究所 Manufacturing method of liquid crystal display device
US9349874B2 (en) 2008-10-31 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9366896B2 (en) 2012-10-12 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and touch panel
JP2016519847A (en) * 2013-03-21 2016-07-07 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD, ARRAY SUBSTRATE, AND DISPLAY
US9391097B2 (en) 2011-12-31 2016-07-12 Boe Technology Group Co., Ltd. Thin film transistor, array substrate and method of manufacturing the same and display device
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9437747B2 (en) 2012-06-15 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
JP2016171346A (en) * 2009-12-11 2016-09-23 株式会社半導体エネルギー研究所 Semiconductor device
JP2016195262A (en) * 2009-11-06 2016-11-17 株式会社半導体エネルギー研究所 Semiconductor device
US9553200B2 (en) 2012-02-29 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2017062866A (en) * 2010-08-31 2017-03-30 株式会社半導体エネルギー研究所 Semiconductor device
JP2017103486A (en) * 2010-02-05 2017-06-08 株式会社半導体エネルギー研究所 Semiconductor device
US9691906B2 (en) 2013-10-24 2017-06-27 Joled Inc. Method for producing thin film transistor
US9716183B2 (en) 2014-03-11 2017-07-25 Sharp Kabushiki Kaisha Semiconductor device and method of manufacturing same
US9741860B2 (en) 2011-09-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9806201B2 (en) 2014-03-07 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101811257B1 (en) 2010-03-31 2017-12-21 후지필름 가부시키가이샤 Thin-film field effect transistor and method for manufacturing the same
JP2018014530A (en) * 2011-01-20 2018-01-25 株式会社半導体エネルギー研究所 Semiconductor device
US9947797B2 (en) 2009-05-29 2018-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10043918B2 (en) 2011-07-08 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10079306B2 (en) 2009-07-31 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2018148231A (en) * 2012-10-17 2018-09-20 株式会社半導体エネルギー研究所 Semiconductor device
JP2018166220A (en) * 2013-01-21 2018-10-25 株式会社半導体エネルギー研究所 Transistor
US10158026B2 (en) 2012-04-13 2018-12-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor stacked layers
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
US10374030B2 (en) 2012-12-28 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Metal oxide semiconductor device
JP2019179933A (en) * 2010-12-17 2019-10-17 株式会社半導体エネルギー研究所 Transistor and display device
JPWO2018100465A1 (en) * 2016-12-02 2019-10-31 株式会社半導体エネルギー研究所 Semiconductor device
JP2019220716A (en) * 2009-10-30 2019-12-26 株式会社半導体エネルギー研究所 Semiconductor device
JP2019220543A (en) * 2018-06-19 2019-12-26 日立金属株式会社 Oxide semiconductor layer, sputtering target for oxide semiconductor layer formation and thin-film transistor
JP2020014011A (en) * 2012-11-16 2020-01-23 株式会社半導体エネルギー研究所 Semiconductor device
JP2020014023A (en) * 2010-03-26 2020-01-23 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US10564698B2 (en) 2016-08-19 2020-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for controlling power supply in semiconductor device
JP2020115544A (en) * 2009-10-30 2020-07-30 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
JP2020127034A (en) * 2009-12-25 2020-08-20 株式会社半導体エネルギー研究所 Semiconductor device
CN111668315A (en) * 2013-08-19 2020-09-15 出光兴产株式会社 Oxide semiconductor substrate and Schottky barrier diode element
JP2020188276A (en) * 2008-10-24 2020-11-19 株式会社半導体エネルギー研究所 Semiconductor device
JP2020198457A (en) * 2009-11-20 2020-12-10 株式会社半導体エネルギー研究所 Semiconductor device
EP3790057A1 (en) * 2019-09-06 2021-03-10 SABIC Global Technologies B.V. Low temperature processed semiconductor thin-film transistor
JP2021101485A (en) * 2011-06-17 2021-07-08 株式会社半導体エネルギー研究所 Liquid crystal display device
US11152493B2 (en) 2009-07-10 2021-10-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2021192448A (en) * 2010-11-05 2021-12-16 株式会社半導体エネルギー研究所 Semiconductor device
JP2022000895A (en) * 2009-11-27 2022-01-04 株式会社半導体エネルギー研究所 Semiconductor device
JP2022008355A (en) * 2009-07-17 2022-01-13 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
JP2023157954A (en) * 2010-01-20 2023-10-26 株式会社半導体エネルギー研究所 display device
EP4207303A4 (en) * 2021-06-25 2024-01-10 BOE Technology Group Co., Ltd. OXIDE THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, AND DISPLAY DEVICE
JP2026012394A (en) * 2012-10-24 2026-01-23 株式会社半導体エネルギー研究所 liquid crystal display device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011034012A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
CN102723364B (en) * 2009-10-21 2015-02-25 株式会社半导体能源研究所 Semiconductor device with a plurality of transistors
KR102066532B1 (en) 2009-11-06 2020-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101824124B1 (en) * 2009-11-28 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101805378B1 (en) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
TWI487034B (en) * 2010-09-24 2015-06-01 Au Optronics Corp Thin film transistor and method for fabricating the same
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TWI532154B (en) 2014-02-25 2016-05-01 群創光電股份有限公司 Display panel and display device
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037268A (en) * 2001-07-24 2003-02-07 Minolta Co Ltd Semiconductor device and method of manufacturing the same
WO2007063966A1 (en) * 2005-12-02 2007-06-07 Idemitsu Kosan Co., Ltd. Tft substrate and tft substrate manufacturing method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100659759B1 (en) * 2004-10-06 2006-12-19 삼성에스디아이 주식회사 Bottom gate thin film transistor, flat panel display device having same, and manufacturing method of thin film transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037268A (en) * 2001-07-24 2003-02-07 Minolta Co Ltd Semiconductor device and method of manufacturing the same
WO2007063966A1 (en) * 2005-12-02 2007-06-07 Idemitsu Kosan Co., Ltd. Tft substrate and tft substrate manufacturing method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9397194B2 (en) 2008-09-01 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with oxide semiconductor ohmic conatct layers
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
US10128381B2 (en) 2008-09-01 2018-11-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxygen rich gate insulating layer
US9130067B2 (en) 2008-10-08 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Display device
US9915843B2 (en) 2008-10-08 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device with pixel including capacitor
US10254607B2 (en) 2008-10-08 2019-04-09 Semiconductor Energy Laboratory Co., Ltd. Display device
US9703157B2 (en) 2008-10-08 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device
US9136389B2 (en) 2008-10-24 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, thin film transistor, and display device
JP2020188276A (en) * 2008-10-24 2020-11-19 株式会社半導体エネルギー研究所 Semiconductor device
US9842942B2 (en) 2008-10-31 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9349874B2 (en) 2008-10-31 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10269978B2 (en) 2008-10-31 2019-04-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11107928B2 (en) 2008-10-31 2021-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9911860B2 (en) 2008-10-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11594643B2 (en) 2008-10-31 2023-02-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9722054B2 (en) 2008-11-28 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8546182B2 (en) 2008-11-28 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8552434B2 (en) 2008-11-28 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2010131310A1 (en) * 2009-05-13 2010-11-18 パナソニック株式会社 Semiconductor memory cell and method for manufacturing same
US9947797B2 (en) 2009-05-29 2018-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2020074403A (en) * 2009-06-30 2020-05-14 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
US10790383B2 (en) 2009-06-30 2020-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2015092624A (en) * 2009-06-30 2015-05-14 株式会社半導体エネルギー研究所 Semiconductor device
JP2023052565A (en) * 2009-06-30 2023-04-11 株式会社半導体エネルギー研究所 semiconductor equipment
JP2023040052A (en) * 2009-06-30 2023-03-22 株式会社半導体エネルギー研究所 semiconductor equipment
US9985118B2 (en) 2009-06-30 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2022063270A (en) * 2009-06-30 2022-04-21 株式会社半導体エネルギー研究所 Semiconductor device
JP7217371B2 (en) 2009-06-30 2023-02-02 株式会社半導体エネルギー研究所 semiconductor equipment
US9054137B2 (en) 2009-06-30 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2015109454A (en) * 2009-06-30 2015-06-11 株式会社半導体エネルギー研究所 Semiconductor device and method for manufacturing semiconductor device
US11417754B2 (en) 2009-06-30 2022-08-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9136115B2 (en) 2009-06-30 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2011029628A (en) * 2009-06-30 2011-02-10 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
JP2014053624A (en) * 2009-06-30 2014-03-20 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device
US10090171B2 (en) 2009-06-30 2018-10-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2015165578A (en) * 2009-06-30 2015-09-17 株式会社半導体エネルギー研究所 Manufacturing method for semiconductor device
US9852906B2 (en) 2009-06-30 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20180110174A (en) * 2009-06-30 2018-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US20180233589A1 (en) 2009-06-30 2018-08-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9831101B2 (en) 2009-06-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2024160316A (en) * 2009-06-30 2024-11-13 株式会社半導体エネルギー研究所 Semiconductor Device
JP7561818B2 (en) 2009-06-30 2024-10-04 株式会社半導体エネルギー研究所 Semiconductor Device
US9293566B2 (en) 2009-06-30 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9299807B2 (en) 2009-06-30 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP7538265B2 (en) 2009-06-30 2024-08-21 株式会社半導体エネルギー研究所 Semiconductor Device
US10418467B2 (en) 2009-06-30 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8513054B2 (en) 2009-06-30 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US12302645B2 (en) 2009-06-30 2025-05-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2020102640A (en) * 2009-06-30 2020-07-02 株式会社半導体エネルギー研究所 Semiconductor device
KR102011616B1 (en) * 2009-06-30 2019-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9576795B2 (en) 2009-06-30 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10332743B2 (en) 2009-06-30 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2017017338A (en) * 2009-06-30 2017-01-19 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9412768B2 (en) 2009-06-30 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9837441B2 (en) 2009-07-03 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
US9130046B2 (en) 2009-07-03 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
TWI471950B (en) * 2009-07-03 2015-02-01 半導體能源研究所股份有限公司 Display device including transistor and method of manufacturing the same
US12272698B2 (en) 2009-07-03 2025-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising driver circuit
US11257847B2 (en) 2009-07-03 2022-02-22 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
US8735884B2 (en) 2009-07-03 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor
US10211231B2 (en) 2009-07-03 2019-02-19 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
US10714503B2 (en) 2009-07-03 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
JP2011029635A (en) * 2009-07-03 2011-02-10 Semiconductor Energy Lab Co Ltd Method of manufacturing display device having transistor
US9812465B2 (en) 2009-07-03 2017-11-07 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
US11978741B2 (en) 2009-07-03 2024-05-07 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
US11637130B2 (en) 2009-07-03 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
US11855194B2 (en) 2009-07-10 2023-12-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US11152493B2 (en) 2009-07-10 2021-10-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2011023695A (en) * 2009-07-15 2011-02-03 Samsung Mobile Display Co Ltd Organic electroluminescence display device and method of manufacturing the same
JP2022008355A (en) * 2009-07-17 2022-01-13 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
JP7150958B2 (en) 2009-07-17 2022-10-11 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
JP7336499B2 (en) 2009-07-31 2023-08-31 株式会社半導体エネルギー研究所 Display device
US8937306B2 (en) 2009-07-31 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
JP2016167612A (en) * 2009-07-31 2016-09-15 株式会社半導体エネルギー研究所 Electronics
JP2017204654A (en) * 2009-07-31 2017-11-16 株式会社半導体エネルギー研究所 Semiconductor device
JP2025039579A (en) * 2009-07-31 2025-03-21 株式会社半導体エネルギー研究所 Semiconductor Device
JP7609942B2 (en) 2009-07-31 2025-01-07 株式会社半導体エネルギー研究所 Semiconductor Device
US11106101B2 (en) 2009-07-31 2021-08-31 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2011049549A (en) * 2009-07-31 2011-03-10 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
US9741779B2 (en) 2009-07-31 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device
JP2011049539A (en) * 2009-07-31 2011-03-10 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
US10079306B2 (en) 2009-07-31 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9024313B2 (en) 2009-07-31 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10680111B2 (en) 2009-07-31 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device
US11947228B2 (en) 2009-07-31 2024-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9362416B2 (en) 2009-07-31 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor wearable device
JP2023166427A (en) * 2009-07-31 2023-11-21 株式会社半導体エネルギー研究所 Semiconductor device
JP2015111684A (en) * 2009-07-31 2015-06-18 株式会社半導体エネルギー研究所 Semiconductor device
JP2022024005A (en) * 2009-07-31 2022-02-08 株式会社半導体エネルギー研究所 Semiconductor device
JP2019091938A (en) * 2009-07-31 2019-06-13 株式会社半導体エネルギー研究所 Semiconductor device
JP2015109476A (en) * 2009-08-07 2015-06-11 株式会社半導体エネルギー研究所 Semiconductor device
US9954005B2 (en) 2009-08-07 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer
JP2016028432A (en) * 2009-08-07 2016-02-25 株式会社半導体エネルギー研究所 Method of manufacturing semiconductor device
US9202851B2 (en) 2009-08-07 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2022095639A (en) * 2009-09-04 2022-06-28 株式会社半導体エネルギー研究所 Display device
US11094717B2 (en) 2009-09-04 2021-08-17 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
JP2017120926A (en) * 2009-09-04 2017-07-06 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
JP2013047849A (en) * 2009-09-04 2013-03-07 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2018174354A (en) * 2009-09-04 2018-11-08 株式会社半導体エネルギー研究所 Semiconductor device
US9368641B2 (en) 2009-09-04 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
US10665615B2 (en) 2009-09-04 2020-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
US9954007B2 (en) 2009-09-04 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
US9105735B2 (en) 2009-09-04 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
US10418384B2 (en) 2009-09-04 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
US9640670B2 (en) 2009-09-04 2017-05-02 Semiconductor Energy Laboratory Co., Ltd. Transistors in display device
JP2011077510A (en) * 2009-09-04 2011-04-14 Semiconductor Energy Lab Co Ltd Transistor and display device
US11862643B2 (en) 2009-09-04 2024-01-02 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
US12272697B2 (en) 2009-09-04 2025-04-08 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
JP2011066070A (en) * 2009-09-15 2011-03-31 Idemitsu Kosan Co Ltd Polycrystalline thin film, deposition method of the same, and thin film transistor
JP2018152605A (en) * 2009-09-16 2018-09-27 株式会社半導体エネルギー研究所 Transistor
JP2014239242A (en) * 2009-09-16 2014-12-18 株式会社半導体エネルギー研究所 Semiconductor device
JP2017103469A (en) * 2009-09-16 2017-06-08 株式会社半導体エネルギー研究所 Semiconductor device
JP2015015478A (en) * 2009-09-16 2015-01-22 株式会社半導体エネルギー研究所 Semiconductor device
US9935202B2 (en) 2009-09-16 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device comprising oxide semiconductor layer
EP2478554B1 (en) * 2009-09-16 2016-06-08 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
JP2016174160A (en) * 2009-09-16 2016-09-29 株式会社半導体エネルギー研究所 Oxide semiconductor layer and semiconductor device
JP2011086923A (en) * 2009-09-16 2011-04-28 Semiconductor Energy Lab Co Ltd Transistor and display device
JP2016006912A (en) * 2009-09-16 2016-01-14 株式会社半導体エネルギー研究所 Oxide semiconductor layer and semiconductor device
US8492758B2 (en) 2009-09-24 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
KR20190137959A (en) * 2009-09-24 2019-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
US9853167B2 (en) 2009-09-24 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
KR101810383B1 (en) 2009-09-24 2017-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
JP2015122519A (en) * 2009-09-24 2015-07-02 株式会社半導体エネルギー研究所 Semiconductor device
KR102321565B1 (en) * 2009-09-24 2021-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
JP2023115079A (en) * 2009-09-24 2023-08-18 株式会社半導体エネルギー研究所 liquid crystal display
JP2020025113A (en) * 2009-09-24 2020-02-13 株式会社半導体エネルギー研究所 Semiconductor device
US9214563B2 (en) 2009-09-24 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
KR20200133002A (en) * 2009-09-24 2020-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
KR20180118811A (en) * 2009-09-24 2018-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
US10418491B2 (en) 2009-09-24 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP7577793B2 (en) 2009-09-24 2024-11-05 株式会社半導体エネルギー研究所 Liquid crystal display device
JP7048552B2 (en) 2009-09-24 2022-04-05 株式会社半導体エネルギー研究所 Semiconductor device
JP2011091375A (en) * 2009-09-24 2011-05-06 Semiconductor Energy Lab Co Ltd Oxide semiconductor film and semiconductor device
JP2022082632A (en) * 2009-09-24 2022-06-02 株式会社半導体エネルギー研究所 Semiconductor device
US9318617B2 (en) 2009-09-24 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP2015165583A (en) * 2009-09-24 2015-09-17 株式会社半導体エネルギー研究所 Method of manufacturing semiconductor device
KR102054650B1 (en) * 2009-09-24 2019-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
KR102180761B1 (en) * 2009-09-24 2020-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
US9520288B2 (en) 2009-09-24 2016-12-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including IGZO layer and manufacturing method thereof
JP7297965B2 (en) 2009-09-24 2023-06-26 株式会社半導体エネルギー研究所 Display device
KR102399469B1 (en) 2009-10-08 2022-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20220070050A (en) * 2009-10-08 2022-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR101877149B1 (en) * 2009-10-08 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor layer, semiconductor device and manufacturing method thereof
US10115831B2 (en) 2009-10-08 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor layer comprising a nanocrystal
JP2023138636A (en) * 2009-10-08 2023-10-02 株式会社半導体エネルギー研究所 oxide semiconductor film
US9406808B2 (en) 2009-10-08 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
KR20190071837A (en) * 2009-10-08 2019-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2017092504A (en) * 2009-10-08 2017-05-25 株式会社半導体エネルギー研究所 Semiconductor device
KR20200051060A (en) * 2009-10-08 2020-05-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102108943B1 (en) 2009-10-08 2020-05-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102484139A (en) * 2009-10-08 2012-05-30 株式会社半导体能源研究所 Oxide semiconductor layer and semiconductor device
JP2013201440A (en) * 2009-10-08 2013-10-03 Semiconductor Energy Lab Co Ltd Semiconductor device
KR102596694B1 (en) 2009-10-08 2023-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
CN105185837A (en) * 2009-10-08 2015-12-23 株式会社半导体能源研究所 Semiconductor Device, Display Device, And Electronic Appliance
JP2016167608A (en) * 2009-10-08 2016-09-15 株式会社半導体エネルギー研究所 Method for manufacturing oxide semiconductor film
KR101623619B1 (en) 2009-10-08 2016-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor layer and semiconductor device
JP2018037685A (en) * 2009-10-08 2018-03-08 株式会社半導体エネルギー研究所 Semiconductor device
JP6994537B2 (en) 2009-10-08 2022-01-14 株式会社半導体エネルギー研究所 Display device and television device
JP7701513B2 (en) 2009-10-08 2025-07-01 株式会社半導体エネルギー研究所 display device
KR102246127B1 (en) 2009-10-08 2021-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2020145447A (en) * 2009-10-08 2020-09-10 株式会社半導体エネルギー研究所 Display device
JP2024107017A (en) * 2009-10-08 2024-08-08 株式会社半導体エネルギー研究所 Display device
KR20180063355A (en) * 2009-10-08 2018-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor layer, semiconductor device and manufacturing method thereof
JP2013131765A (en) * 2009-10-08 2013-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing method
US9306072B2 (en) 2009-10-08 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor layer and semiconductor device
KR101980505B1 (en) 2009-10-08 2019-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor layer, semiconductor device and manufacturing method thereof
KR20210048594A (en) * 2009-10-08 2021-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2011100979A (en) * 2009-10-08 2011-05-19 Semiconductor Energy Lab Co Ltd Oxide semiconductor film and semiconductor device
JPWO2011043300A1 (en) * 2009-10-09 2013-03-04 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP2019186566A (en) * 2009-10-14 2019-10-24 株式会社半導体エネルギー研究所 Semiconductor device
JP2011103452A (en) * 2009-10-14 2011-05-26 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
JP7150097B2 (en) 2009-10-14 2022-10-07 株式会社半導体エネルギー研究所 semiconductor equipment
KR101680047B1 (en) 2009-10-14 2016-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP2021168385A (en) * 2009-10-14 2021-10-21 株式会社半導体エネルギー研究所 Semiconductor device
US9685447B2 (en) 2009-10-30 2017-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor including oxide semiconductor
JP2015015488A (en) * 2009-10-30 2015-01-22 株式会社半導体エネルギー研究所 Semiconductor device
US12205622B2 (en) 2009-10-30 2025-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9373640B2 (en) 2009-10-30 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2020115544A (en) * 2009-10-30 2020-07-30 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
US11963374B2 (en) 2009-10-30 2024-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2019220716A (en) * 2009-10-30 2019-12-26 株式会社半導体エネルギー研究所 Semiconductor device
US10510757B2 (en) 2009-10-30 2019-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including storage element
US11322498B2 (en) 2009-10-30 2022-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12211534B2 (en) 2009-10-30 2025-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015092590A (en) * 2009-10-30 2015-05-14 株式会社半導体エネルギー研究所 Transistor
US10811417B2 (en) 2009-10-30 2020-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11776968B2 (en) 2009-11-06 2023-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer
US9853066B2 (en) 2009-11-06 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2018101788A (en) * 2009-11-06 2018-06-28 株式会社半導体エネルギー研究所 Semiconductor device
US10249647B2 (en) 2009-11-06 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device comprising oxide semiconductor layer
JP2015043428A (en) * 2009-11-06 2015-03-05 株式会社半導体エネルギー研究所 Semiconductor device
JP2011119718A (en) * 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd Semiconductor device and method of manufacturing the same
JP2024014960A (en) * 2009-11-06 2024-02-01 株式会社半導体エネルギー研究所 semiconductor equipment
KR20190143500A (en) * 2009-11-06 2019-12-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP2022095673A (en) * 2009-11-06 2022-06-28 株式会社半導体エネルギー研究所 Semiconductor device
JP7612812B2 (en) 2009-11-06 2025-01-14 株式会社半導体エネルギー研究所 Semiconductor Device
JP7413425B2 (en) 2009-11-06 2024-01-15 株式会社半導体エネルギー研究所 semiconductor equipment
EP2497115A4 (en) * 2009-11-06 2015-09-02 Semiconductor Energy Lab SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
JP2016195262A (en) * 2009-11-06 2016-11-17 株式会社半導体エネルギー研究所 Semiconductor device
US11961842B2 (en) 2009-11-06 2024-04-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR102174366B1 (en) * 2009-11-06 2020-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US11315954B2 (en) 2009-11-06 2022-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20210288079A1 (en) 2009-11-06 2021-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11107840B2 (en) 2009-11-06 2021-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device comprising an oxide semiconductor
KR20190092631A (en) * 2009-11-06 2019-08-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP2017011296A (en) * 2009-11-06 2017-01-12 株式会社半導体エネルギー研究所 Semiconductor device
KR101849321B1 (en) * 2009-11-06 2018-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US10056385B2 (en) 2009-11-06 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including write access transistor whose oxide semiconductor layer including channel formation region
JP2020113783A (en) * 2009-11-06 2020-07-27 株式会社半導体エネルギー研究所 Transistor
KR101763126B1 (en) * 2009-11-06 2017-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP2018050062A (en) * 2009-11-06 2018-03-29 株式会社半導体エネルギー研究所 Semiconductor device
US12080720B2 (en) 2009-11-06 2024-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2015165577A (en) * 2009-11-06 2015-09-17 株式会社半導体エネルギー研究所 Method of manufacturing semiconductor device
KR20180137596A (en) * 2009-11-06 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US10079251B2 (en) 2009-11-06 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN105206676A (en) * 2009-11-06 2015-12-30 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
US9093544B2 (en) 2009-11-06 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102128972B1 (en) * 2009-11-06 2020-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US11710745B2 (en) 2009-11-06 2023-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US12389687B2 (en) 2009-11-06 2025-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US10868046B2 (en) 2009-11-06 2020-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device applying an oxide semiconductor
US11107838B2 (en) 2009-11-06 2021-08-31 Semiconductor Energy Laboratory Co., Ltd. Transistor comprising an oxide semiconductor
JP2020053700A (en) * 2009-11-06 2020-04-02 株式会社半導体エネルギー研究所 Display device
KR102220606B1 (en) 2009-11-06 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US9922685B2 (en) 2009-11-13 2018-03-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP2011123986A (en) * 2009-11-13 2011-06-23 Semiconductor Energy Lab Co Ltd Semiconductor device and method for driving the same
US8592251B2 (en) 2009-11-20 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2020198457A (en) * 2009-11-20 2020-12-10 株式会社半導体エネルギー研究所 Semiconductor device
JP2011109032A (en) * 2009-11-20 2011-06-02 Semiconductor Energy Lab Co Ltd Thin film transistor
US10186619B2 (en) 2009-11-20 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9461181B2 (en) 2009-11-20 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2022009340A (en) * 2009-11-20 2022-01-14 株式会社半導体エネルギー研究所 Semiconductor device
US9093262B2 (en) 2009-11-20 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2011129895A (en) * 2009-11-20 2011-06-30 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
US11894486B2 (en) 2009-11-27 2024-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP7213318B2 (en) 2009-11-27 2023-01-26 株式会社半導体エネルギー研究所 semiconductor equipment
US12396292B2 (en) 2009-11-27 2025-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising first and second conductive layers
JP2022000895A (en) * 2009-11-27 2022-01-04 株式会社半導体エネルギー研究所 Semiconductor device
JP2015173278A (en) * 2009-11-27 2015-10-01 株式会社半導体エネルギー研究所 Semiconductor device
JPWO2011065329A1 (en) * 2009-11-27 2013-04-11 株式会社日立製作所 Oxide semiconductor device and manufacturing method thereof
WO2011065329A1 (en) * 2009-11-27 2011-06-03 株式会社日立製作所 Oxide semiconductor device and method for manufacturing same
US20190109259A1 (en) 2009-11-27 2019-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10396236B2 (en) 2009-11-27 2019-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US9748436B2 (en) 2009-11-27 2017-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2012253363A (en) * 2009-11-28 2012-12-20 Semiconductor Energy Lab Co Ltd Method for manufacturing component
JP2017168860A (en) * 2009-11-28 2017-09-21 株式会社半導体エネルギー研究所 Semiconductor device and liquid crystal display device
WO2011065216A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
US10079310B2 (en) 2009-11-28 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including stacked oxide semiconductor material
JP2017126772A (en) * 2009-11-28 2017-07-20 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method and liquid crystal display panel manufacturing method
US11710795B2 (en) 2009-11-28 2023-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor with c-axis-aligned crystals
JP2017123491A (en) * 2009-11-28 2017-07-13 株式会社半導体エネルギー研究所 Manufacturing method of liquid crystal display panel
KR101396015B1 (en) * 2009-11-28 2014-05-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US11133419B2 (en) 2009-11-28 2021-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2020198455A (en) * 2009-11-28 2020-12-10 株式会社半導体エネルギー研究所 Semiconductor device
US10347771B2 (en) 2009-11-28 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
JP7645964B2 (en) 2009-11-28 2025-03-14 株式会社半導体エネルギー研究所 Semiconductor Device
JP7713550B2 (en) 2009-11-28 2025-07-25 株式会社半導体エネルギー研究所 Semiconductor Device
CN105140101A (en) * 2009-11-28 2015-12-09 株式会社半导体能源研究所 Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
US9214520B2 (en) 2009-11-28 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10608118B2 (en) 2009-11-28 2020-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2019195098A (en) * 2009-11-28 2019-11-07 株式会社半導体エネルギー研究所 Semiconductor device
US9887298B2 (en) 2009-11-28 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8748215B2 (en) 2009-11-28 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
JP2012235150A (en) * 2009-11-28 2012-11-29 Semiconductor Energy Lab Co Ltd Manufacturing method for component
JP2022111377A (en) * 2009-11-28 2022-07-29 株式会社半導体エネルギー研究所 semiconductor equipment
US8748881B2 (en) 2009-11-28 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8765522B2 (en) 2009-11-28 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
JP2012248868A (en) * 2009-11-28 2012-12-13 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2024075661A (en) * 2009-11-28 2024-06-04 株式会社半導体エネルギー研究所 Semiconductor Device
US8779420B2 (en) 2009-11-28 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20210116711A (en) * 2009-11-28 2021-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US12080802B2 (en) 2009-11-28 2024-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising silicon and oxide semiconductor in channel formation region
US9520287B2 (en) 2009-11-28 2016-12-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having stacked oxide semiconductor layers
JP2018207120A (en) * 2009-11-28 2018-12-27 株式会社半導体エネルギー研究所 Semiconductor device and display device
JP2011135064A (en) * 2009-11-28 2011-07-07 Semiconductor Energy Lab Co Ltd Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
JP7064542B2 (en) 2009-11-28 2022-05-10 株式会社半導体エネルギー研究所 Semiconductor device
US10263120B2 (en) 2009-11-28 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and method for manufacturing liquid crystal display panel
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
JP2025083367A (en) * 2009-11-28 2025-05-30 株式会社半導体エネルギー研究所 Semiconductor Device
KR102426613B1 (en) 2009-11-28 2022-07-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP2011135066A (en) * 2009-11-28 2011-07-07 Semiconductor Energy Lab Co Ltd Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
JP2023181325A (en) * 2009-11-28 2023-12-21 株式会社半導体エネルギー研究所 Method for producing layered oxide materials
JP2016154257A (en) * 2009-11-28 2016-08-25 株式会社半導体エネルギー研究所 Semiconductor device
JP2022109270A (en) * 2009-11-28 2022-07-27 株式会社半導体エネルギー研究所 semiconductor equipment
JP2017085182A (en) * 2009-12-04 2017-05-18 株式会社半導体エネルギー研究所 Semiconductor device
US12218249B2 (en) 2009-12-04 2025-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer containing a c-axis aligned crystal
JP2011139054A (en) * 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
JP2020010065A (en) * 2009-12-04 2020-01-16 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method
US8927349B2 (en) 2009-12-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8841163B2 (en) 2009-12-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device comprising oxide semiconductor
JP7066789B2 (en) 2009-12-04 2022-05-13 株式会社半導体エネルギー研究所 Semiconductor device
US10490420B2 (en) 2009-12-04 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2023090716A (en) * 2009-12-04 2023-06-29 株式会社半導体エネルギー研究所 semiconductor equipment
US11342464B2 (en) 2009-12-04 2022-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising first and second insulating layer each has a tapered shape
JP7733050B2 (en) 2009-12-04 2025-09-02 株式会社半導体エネルギー研究所 Semiconductor Devices
CN102648526A (en) * 2009-12-04 2012-08-22 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
US10505049B2 (en) 2009-12-04 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device has an oxide semiconductor layer containing a c-axis aligned crystal
KR20210054603A (en) * 2009-12-04 2021-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8957414B2 (en) 2009-12-04 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising both amorphous and crystalline semiconductor oxide
JP2022103211A (en) * 2009-12-04 2022-07-07 株式会社半導体エネルギー研究所 Semiconductor device
JP2018157219A (en) * 2009-12-04 2018-10-04 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9735284B2 (en) 2009-12-04 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
US9721811B2 (en) 2009-12-04 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device having an oxide semiconductor layer
US10109500B2 (en) 2009-12-04 2018-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2015109448A (en) * 2009-12-04 2015-06-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US11456187B2 (en) 2009-12-04 2022-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor-device
JP7436554B2 (en) 2009-12-04 2024-02-21 株式会社半導体エネルギー研究所 Semiconductor device and its manufacturing method
KR102450889B1 (en) * 2009-12-04 2022-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2017092494A (en) * 2009-12-04 2017-05-25 株式会社半導体エネルギー研究所 Semiconductor device
US11923204B2 (en) 2009-12-04 2024-03-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device comprising oxide semiconductor
KR101396102B1 (en) * 2009-12-04 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US10714358B2 (en) 2009-12-04 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10014415B2 (en) 2009-12-04 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device has an oxide semiconductor layer containing a C-axis aligned crystal
US11728437B2 (en) 2009-12-04 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer containing a c-axis aligned crystal
US10861983B2 (en) 2009-12-04 2020-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer containing a c-axis aligned crystal
US9240467B2 (en) 2009-12-04 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016048800A (en) * 2009-12-04 2016-04-07 株式会社半導体エネルギー研究所 Semiconductor device
JP2016129250A (en) * 2009-12-04 2016-07-14 株式会社半導体エネルギー研究所 Semiconductor device
JP2020174222A (en) * 2009-12-04 2020-10-22 株式会社半導体エネルギー研究所 Semiconductor device
KR20220136513A (en) * 2009-12-04 2022-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102696119B1 (en) * 2009-12-04 2024-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9324881B2 (en) 2009-12-04 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2019216257A (en) * 2009-12-08 2019-12-19 株式会社半導体エネルギー研究所 Display device
US8558233B2 (en) 2009-12-08 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2011142310A (en) * 2009-12-08 2011-07-21 Semiconductor Energy Lab Co Ltd Semiconductor device and method of manufacturing the same
US8293661B2 (en) 2009-12-08 2012-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011070900A1 (en) * 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9040989B2 (en) 2009-12-08 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2013021341A (en) * 2009-12-08 2013-01-31 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
US10854641B2 (en) 2009-12-11 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2016139816A (en) * 2009-12-11 2016-08-04 株式会社半導体エネルギー研究所 Method of manufacturing semiconductor device
JP2016171346A (en) * 2009-12-11 2016-09-23 株式会社半導体エネルギー研究所 Semiconductor device
JP2023014123A (en) * 2009-12-11 2023-01-26 株式会社半導体エネルギー研究所 Semiconductor device
JP2017123490A (en) * 2009-12-11 2017-07-13 株式会社半導体エネルギー研究所 Semiconductor device
JP2015111715A (en) * 2009-12-11 2015-06-18 株式会社半導体エネルギー研究所 Semiconductor device
JP7430234B2 (en) 2009-12-11 2024-02-09 株式会社半導体エネルギー研究所 semiconductor equipment
US9508742B2 (en) 2009-12-11 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having switching transistor that includes oxide semiconductor material
US12274095B2 (en) 2009-12-11 2025-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9735180B2 (en) 2009-12-11 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US11961843B2 (en) 2009-12-11 2024-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2017199919A (en) * 2009-12-11 2017-11-02 株式会社半導体エネルギー研究所 Semiconductor device
US9893204B2 (en) 2009-12-11 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transistor including two oxide semiconductor layers having different lattice constants
US10600818B2 (en) 2009-12-11 2020-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10312267B2 (en) 2009-12-11 2019-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10002888B2 (en) 2009-12-11 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9034104B2 (en) 2009-12-18 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising single- and multi-component oxide semiconductor layers
JP2011146698A (en) * 2009-12-18 2011-07-28 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
JP2015173286A (en) * 2009-12-18 2015-10-01 株式会社半導体エネルギー研究所 Semiconductor device
WO2011074506A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9978757B2 (en) 2009-12-18 2018-05-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2020127034A (en) * 2009-12-25 2020-08-20 株式会社半導体エネルギー研究所 Semiconductor device
JP7015863B2 (en) 2009-12-25 2022-02-03 株式会社半導体エネルギー研究所 Semiconductor device
US8686425B2 (en) 2009-12-28 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2023126275A (en) * 2009-12-28 2023-09-07 株式会社半導体エネルギー研究所 Semiconductor device
US10141425B2 (en) 2009-12-28 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP7642021B2 (en) 2009-12-28 2025-03-07 株式会社半導体エネルギー研究所 Semiconductor Device
US8530285B2 (en) 2009-12-28 2013-09-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101883802B1 (en) 2009-12-28 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP2011155249A (en) * 2009-12-28 2011-08-11 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
CN102668098A (en) * 2009-12-28 2012-09-12 株式会社半导体能源研究所 Method for manufacturing semiconductor device
CN102903758A (en) * 2009-12-28 2013-01-30 株式会社半导体能源研究所 Method for manufacturing semiconductor device
US9054134B2 (en) 2009-12-28 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011081009A1 (en) * 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI595569B (en) * 2009-12-28 2017-08-11 半導體能源研究所股份有限公司 Semiconductor device manufacturing method
KR20180037333A (en) * 2009-12-28 2018-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9859401B2 (en) 2009-12-28 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2016201564A (en) * 2009-12-28 2016-12-01 株式会社半導体エネルギー研究所 Semiconductor device
KR101436120B1 (en) 2009-12-28 2014-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP2013058770A (en) * 2010-01-15 2013-03-28 Semiconductor Energy Lab Co Ltd Semiconductor device
US8866233B2 (en) 2010-01-15 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120125272A (en) * 2010-01-15 2012-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US10439067B2 (en) 2010-01-15 2019-10-08 Samsung Display Co., Ltd. Display substrate including thin film transistors having a multilayered oxide semiconductor pattern
US9159745B2 (en) 2010-01-15 2015-10-13 Samsung Display Co., Ltd. Display substrate
JP2011146713A (en) * 2010-01-15 2011-07-28 Samsung Electronics Co Ltd Display substrate
KR101698537B1 (en) * 2010-01-15 2017-01-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2015092687A (en) * 2010-01-20 2015-05-14 株式会社半導体エネルギー研究所 Semiconductor device
US12159600B2 (en) 2010-01-20 2024-12-03 Semiconductor Energy Laboratory Co., Ltd. Display device
US10454475B2 (en) 2010-01-20 2019-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9614097B2 (en) 2010-01-20 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2023157954A (en) * 2010-01-20 2023-10-26 株式会社半導体エネルギー研究所 display device
KR101400919B1 (en) 2010-01-26 2014-05-30 주성엔지니어링(주) Thin film transistor and method of manufacturing the same
US9659653B2 (en) 2010-02-05 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015028837A (en) * 2010-02-05 2015-02-12 株式会社半導体エネルギー研究所 Semiconductor device
JP2017103486A (en) * 2010-02-05 2017-06-08 株式会社半導体エネルギー研究所 Semiconductor device
US11749686B2 (en) 2010-02-05 2023-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10615179B2 (en) 2010-02-05 2020-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11469255B2 (en) 2010-02-05 2022-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US12113074B2 (en) 2010-02-05 2024-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11101295B2 (en) 2010-02-05 2021-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9991288B2 (en) 2010-02-05 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2015111705A (en) * 2010-02-12 2015-06-18 株式会社半導体エネルギー研究所 Method of manufacturing transistor
JP2015119189A (en) * 2010-02-12 2015-06-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP2015122512A (en) * 2010-02-12 2015-07-02 株式会社半導体エネルギー研究所 Semiconductor device
KR101808570B1 (en) * 2010-03-03 2017-12-13 후지필름 가부시키가이샤 Method of producing igzo-based amorphous oxide semiconductor film and method of producing field-effect transistor using the same
JP2011181802A (en) * 2010-03-03 2011-09-15 Fujifilm Corp Method of manufacturing igzo-based amorphous oxide semiconductor film and method of manufacturing field effect transistor using the same
CN102194887A (en) * 2010-03-04 2011-09-21 索尼公司 Thin film transistor, its manufacture method and display device
JP2011187506A (en) * 2010-03-04 2011-09-22 Sony Corp Thin-film transistor, method of manufacturing the thin-film transistor, and display device
JP2017152717A (en) * 2010-03-05 2017-08-31 株式会社半導体エネルギー研究所 Manufacturing method for oxide semiconductor film
JP2015181163A (en) * 2010-03-05 2015-10-15 株式会社半導体エネルギー研究所 Method for fabricating oxide semiconductor film
JP2019153794A (en) * 2010-03-05 2019-09-12 株式会社半導体エネルギー研究所 Manufacturing method for semiconductor device
JP7279141B2 (en) 2010-03-26 2023-05-22 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
JP2023101541A (en) * 2010-03-26 2023-07-21 株式会社半導体エネルギー研究所 semiconductor equipment
JP7610642B2 (en) 2010-03-26 2025-01-08 株式会社半導体エネルギー研究所 Semiconductor Device
JP2022027774A (en) * 2010-03-26 2022-02-14 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
US8704219B2 (en) 2010-03-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2020014023A (en) * 2010-03-26 2020-01-23 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101811257B1 (en) 2010-03-31 2017-12-21 후지필름 가부시키가이샤 Thin-film field effect transistor and method for manufacturing the same
US10043424B2 (en) 2010-03-31 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a display device having an oxide semiconductor switching transistor
JP2016075945A (en) * 2010-03-31 2016-05-12 株式会社半導体エネルギー研究所 Manufacturing method of liquid crystal display device
US9646521B2 (en) 2010-03-31 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
US10879274B2 (en) 2010-04-09 2020-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10008515B2 (en) 2010-04-09 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9431429B2 (en) 2010-04-09 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9059047B2 (en) 2010-04-09 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10510777B2 (en) 2010-04-09 2019-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2011237418A (en) * 2010-04-16 2011-11-24 Semiconductor Energy Lab Co Ltd Current measurement method, semiconductor device inspection method, semiconductor device and characteristic evaluation circuit
US9390918B2 (en) 2010-04-23 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9978878B2 (en) 2010-04-23 2018-05-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8945982B2 (en) 2010-04-23 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2011248356A (en) * 2010-04-28 2011-12-08 Semiconductor Energy Lab Co Ltd Semiconductor display device and driving method thereof
US11983342B2 (en) 2010-04-28 2024-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and driving method the same
US8790960B2 (en) 2010-04-28 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011135987A1 (en) * 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9449852B2 (en) 2010-04-28 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10871841B2 (en) 2010-04-28 2020-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and driving method the same
US11392232B2 (en) 2010-04-28 2022-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and driving method the same
US10013087B2 (en) 2010-04-28 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and driving method the same
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9601602B2 (en) 2010-05-21 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9142648B2 (en) 2010-05-21 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9667148B2 (en) 2010-06-04 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Photoelectric transducer device including a transistor including an oxide semiconductor layer
JP2012015491A (en) * 2010-06-04 2012-01-19 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
US9349820B2 (en) 2010-06-18 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9076876B2 (en) 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9685561B2 (en) 2010-06-18 2017-06-20 Semiconductor Energy Laboratories Co., Ltd. Method for manufacturing a semiconductor device
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012015436A (en) * 2010-07-05 2012-01-19 Sony Corp Thin film transistor and display device
JP2017062866A (en) * 2010-08-31 2017-03-30 株式会社半導体エネルギー研究所 Semiconductor device
JP2012084863A (en) * 2010-09-13 2012-04-26 Semiconductor Energy Lab Co Ltd Method for manufacturing crystalline oxide semiconductor film
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
US9263451B2 (en) 2010-10-29 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Storage device including memory cell using transistor having oxide semiconductor and amplifier circuit
JP2012256824A (en) * 2010-10-29 2012-12-27 Semiconductor Energy Lab Co Ltd Memory device
JP2012099661A (en) * 2010-11-02 2012-05-24 Idemitsu Kosan Co Ltd Method of manufacturing oxide semiconductor
JP7194791B2 (en) 2010-11-05 2022-12-22 株式会社半導体エネルギー研究所 semiconductor equipment
JP2021192448A (en) * 2010-11-05 2021-12-16 株式会社半導体エネルギー研究所 Semiconductor device
JP7510995B2 (en) 2010-11-05 2024-07-04 株式会社半導体エネルギー研究所 Semiconductor Device
JP2023017090A (en) * 2010-11-05 2023-02-02 株式会社半導体エネルギー研究所 semiconductor equipment
JP2018133596A (en) * 2010-11-30 2018-08-23 株式会社半導体エネルギー研究所 Semiconductor device
JP2023052247A (en) * 2010-11-30 2023-04-11 株式会社半導体エネルギー研究所 semiconductor equipment
JP2024180502A (en) * 2010-11-30 2024-12-26 株式会社半導体エネルギー研究所 Method for manufacturing a semiconductor device
US9202927B2 (en) 2010-11-30 2015-12-01 Seminconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP7572469B2 (en) 2010-11-30 2024-10-23 株式会社半導体エネルギー研究所 Semiconductor Device
US9281358B2 (en) 2010-11-30 2016-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9634082B2 (en) 2010-11-30 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2021097251A (en) * 2010-11-30 2021-06-24 株式会社半導体エネルギー研究所 Semiconductor device
US9184298B2 (en) 2010-12-02 2015-11-10 Kobe Steel, Ltd. Interconnect structure and sputtering target
WO2012074046A1 (en) * 2010-12-02 2012-06-07 株式会社神戸製鋼所 Wiring structure and sputtering target
JP2022103433A (en) * 2010-12-03 2022-07-07 株式会社半導体エネルギー研究所 Semiconductor device
US8994021B2 (en) 2010-12-03 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9331208B2 (en) 2010-12-03 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9711655B2 (en) 2010-12-03 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US10103277B2 (en) 2010-12-03 2018-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film
US10916663B2 (en) 2010-12-03 2021-02-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8669556B2 (en) 2010-12-03 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12057510B2 (en) 2010-12-17 2024-08-06 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US11049977B2 (en) 2010-12-17 2021-06-29 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US11688810B2 (en) 2010-12-17 2023-06-27 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
JP7228620B2 (en) 2010-12-17 2023-02-24 株式会社半導体エネルギー研究所 transistor
US11217702B2 (en) 2010-12-17 2022-01-04 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US12396216B2 (en) 2010-12-17 2025-08-19 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
JP2019179933A (en) * 2010-12-17 2019-10-17 株式会社半導体エネルギー研究所 Transistor and display device
JP2021132213A (en) * 2010-12-17 2021-09-09 株式会社半導体エネルギー研究所 Transistor
JP7358577B2 (en) 2011-01-20 2023-10-10 株式会社半導体エネルギー研究所 semiconductor equipment
JP2022141904A (en) * 2011-01-20 2022-09-29 株式会社半導体エネルギー研究所 semiconductor equipment
JP2018014530A (en) * 2011-01-20 2018-01-25 株式会社半導体エネルギー研究所 Semiconductor device
US10079295B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
WO2012144557A1 (en) * 2011-04-22 2012-10-26 株式会社神戸製鋼所 Thin film transistor structure, and thin film transistor and display device provided with said structure
KR101972759B1 (en) * 2011-04-22 2019-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing thereof
KR20120120062A (en) * 2011-04-22 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing thereof
US9093542B2 (en) 2011-04-22 2015-07-28 Kobe Steel, Ltd. Thin-film transistor structure, as well as thin-film transistor and display device each having said structure
CN103493209A (en) * 2011-04-22 2014-01-01 株式会社神户制钢所 Thin film transistor structure, and thin film transistor and display device provided with said structure
JP2012253331A (en) * 2011-05-11 2012-12-20 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
US9893195B2 (en) 2011-05-11 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR101999096B1 (en) * 2011-05-11 2019-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of manufacturing semiconductor device
JP2016139819A (en) * 2011-05-11 2016-08-04 株式会社半導体エネルギー研究所 Semiconductor device
KR20120127250A (en) * 2011-05-11 2012-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of semiconductor device
JP2021101485A (en) * 2011-06-17 2021-07-08 株式会社半導体エネルギー研究所 Liquid crystal display device
JP2022189868A (en) * 2011-06-17 2022-12-22 株式会社半導体エネルギー研究所 Semiconductor device
US11588058B2 (en) 2011-07-08 2023-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20220121762A (en) * 2011-07-08 2022-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 semiconductor device
KR102854145B1 (en) 2011-07-08 2025-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6995936B2 (en) 2011-07-08 2022-01-17 株式会社半導体エネルギー研究所 Semiconductor device
JP2022050414A (en) * 2011-07-08 2022-03-30 株式会社半導体エネルギー研究所 Semiconductor device
US12132121B2 (en) 2011-07-08 2024-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20210061988A (en) * 2011-07-08 2021-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP7456042B2 (en) 2011-07-08 2024-03-26 株式会社半導体エネルギー研究所 semiconductor equipment
US10658522B2 (en) 2011-07-08 2020-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2023093542A (en) * 2011-07-08 2023-07-04 株式会社半導体エネルギー研究所 Semiconductor device
US10043918B2 (en) 2011-07-08 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11011652B2 (en) 2011-07-08 2021-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102663353B1 (en) 2011-07-08 2024-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2020174183A (en) * 2011-07-08 2020-10-22 株式会社半導体エネルギー研究所 Semiconductor device
KR20240065051A (en) * 2011-07-08 2024-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP7258996B2 (en) 2011-07-08 2023-04-17 株式会社半導体エネルギー研究所 semiconductor equipment
KR102437211B1 (en) 2011-07-08 2022-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102108572B1 (en) * 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20130033308A (en) * 2011-09-26 2013-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US10290744B2 (en) 2011-09-29 2019-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9741860B2 (en) 2011-09-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12218251B2 (en) 2011-09-29 2025-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11217701B2 (en) 2011-09-29 2022-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11791415B2 (en) 2011-09-29 2023-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10622485B2 (en) 2011-09-29 2020-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12225739B2 (en) 2011-09-29 2025-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9218966B2 (en) 2011-10-14 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9559213B2 (en) 2011-12-23 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013149965A (en) * 2011-12-23 2013-08-01 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2020145478A (en) * 2011-12-23 2020-09-10 株式会社半導体エネルギー研究所 Semiconductor device
US9391097B2 (en) 2011-12-31 2016-07-12 Boe Technology Group Co., Ltd. Thin film transistor, array substrate and method of manufacturing the same and display device
CN103489881A (en) * 2011-12-31 2014-01-01 京东方科技集团股份有限公司 Thin film transistor array substrate, manufacturing method of thin film transistor array substrate as well as display device
KR20200029412A (en) 2012-01-26 2020-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US9171957B2 (en) 2012-01-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10243064B2 (en) 2012-01-26 2019-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11081502B2 (en) 2012-01-26 2021-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20210000709A (en) 2012-01-26 2021-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US11682677B2 (en) 2012-01-26 2023-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US12191313B2 (en) 2012-01-26 2025-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9553200B2 (en) 2012-02-29 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11355645B2 (en) 2012-04-13 2022-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising stacked oxide semiconductor layers
US10559699B2 (en) 2012-04-13 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11929437B2 (en) 2012-04-13 2024-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising various thin-film transistors
US10872981B2 (en) 2012-04-13 2020-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor
US12414335B2 (en) 2012-04-13 2025-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising conductive layers functioning as first and second gate electrodes of a transistor
US10158026B2 (en) 2012-04-13 2018-12-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor stacked layers
JP2014013917A (en) * 2012-06-06 2014-01-23 Kobe Steel Ltd Thin film transistor
US10483404B2 (en) 2012-06-15 2019-11-19 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US12363953B2 (en) 2012-06-15 2025-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
US9437747B2 (en) 2012-06-15 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US11424368B2 (en) 2012-06-15 2022-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor
US10032926B2 (en) 2012-06-15 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor
US10741695B2 (en) 2012-06-15 2020-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor
JP2014029994A (en) * 2012-06-27 2014-02-13 Semiconductor Energy Lab Co Ltd Semiconductor device and semiconductor device manufacturing method
US9240492B2 (en) 2012-08-10 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US9184245B2 (en) 2012-08-10 2015-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9437749B2 (en) 2012-08-10 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US10446668B2 (en) 2012-08-10 2019-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
WO2014025002A1 (en) * 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP2023024585A (en) * 2012-08-10 2023-02-16 株式会社半導体エネルギー研究所 semiconductor equipment
US9502580B2 (en) 2012-08-10 2016-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014078704A (en) * 2012-09-24 2014-05-01 Semiconductor Energy Lab Co Ltd Display
US9366896B2 (en) 2012-10-12 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and touch panel
JP2018148231A (en) * 2012-10-17 2018-09-20 株式会社半導体エネルギー研究所 Semiconductor device
JP2026012394A (en) * 2012-10-24 2026-01-23 株式会社半導体エネルギー研究所 liquid crystal display device
JP2020014011A (en) * 2012-11-16 2020-01-23 株式会社半導体エネルギー研究所 Semiconductor device
US12243943B2 (en) 2012-11-16 2025-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11710794B2 (en) 2012-11-16 2023-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10374030B2 (en) 2012-12-28 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Metal oxide semiconductor device
JP7757497B2 (en) 2012-12-28 2025-10-21 株式会社半導体エネルギー研究所 Semiconductor Devices
JP2025000952A (en) * 2012-12-28 2025-01-07 株式会社半導体エネルギー研究所 Semiconductor Device
US10964821B2 (en) 2013-01-21 2021-03-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US11380802B2 (en) 2013-01-21 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2018166220A (en) * 2013-01-21 2018-10-25 株式会社半導体エネルギー研究所 Transistor
US11888071B2 (en) 2013-01-21 2024-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2016519847A (en) * 2013-03-21 2016-07-07 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD, ARRAY SUBSTRATE, AND DISPLAY
US11843004B2 (en) 2013-04-12 2023-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having specified relative material concentration between In—Ga—Zn—O films
US12218144B2 (en) 2013-04-12 2025-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having specified relative material concentration between In—Ga—Zn—O films
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
US11063066B2 (en) 2013-04-12 2021-07-13 Semiconductor Energy Laboratory Co., Ltd. C-axis alignment of an oxide film over an oxide semiconductor film
CN111668315A (en) * 2013-08-19 2020-09-15 出光兴产株式会社 Oxide semiconductor substrate and Schottky barrier diode element
CN111668315B (en) * 2013-08-19 2023-09-12 出光兴产株式会社 Oxide semiconductor substrate and Schottky barrier diode element
US9691906B2 (en) 2013-10-24 2017-06-27 Joled Inc. Method for producing thin film transistor
US9806201B2 (en) 2014-03-07 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9716183B2 (en) 2014-03-11 2017-07-25 Sharp Kabushiki Kaisha Semiconductor device and method of manufacturing same
CN104966738A (en) * 2015-04-13 2015-10-07 友达光电股份有限公司 Active element structure and manufacturing method thereof
US10564698B2 (en) 2016-08-19 2020-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for controlling power supply in semiconductor device
US11281285B2 (en) 2016-08-19 2022-03-22 Semiconductor Energy Laboratory Co., Ltd. Method for controlling power supply in semiconductor device
JP7085491B2 (en) 2016-12-02 2022-06-16 株式会社半導体エネルギー研究所 Semiconductor equipment
JPWO2018100465A1 (en) * 2016-12-02 2019-10-31 株式会社半導体エネルギー研究所 Semiconductor device
US11688602B2 (en) 2016-12-02 2023-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with electrodes over oxide semiconductor
JP2019220543A (en) * 2018-06-19 2019-12-26 日立金属株式会社 Oxide semiconductor layer, sputtering target for oxide semiconductor layer formation and thin-film transistor
EP3790057A1 (en) * 2019-09-06 2021-03-10 SABIC Global Technologies B.V. Low temperature processed semiconductor thin-film transistor
EP4207303A4 (en) * 2021-06-25 2024-01-10 BOE Technology Group Co., Ltd. OXIDE THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, AND DISPLAY DEVICE
US20240097042A1 (en) * 2021-06-25 2024-03-21 Boe Technology Group Co., Ltd. Oxide thin film transistor and preparation method thereof, and display device
US12432980B2 (en) * 2021-06-25 2025-09-30 Boe Technology Group Co., Ltd. Oxide thin film transistor and preparation method thereof, and display device

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