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WO2009028460A1 - ベンゾジチオフェン誘導体並びにそれを用いた有機薄膜トランジスタ及び有機薄膜発光トランジスタ - Google Patents

ベンゾジチオフェン誘導体並びにそれを用いた有機薄膜トランジスタ及び有機薄膜発光トランジスタ Download PDF

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Publication number
WO2009028460A1
WO2009028460A1 PCT/JP2008/065112 JP2008065112W WO2009028460A1 WO 2009028460 A1 WO2009028460 A1 WO 2009028460A1 JP 2008065112 W JP2008065112 W JP 2008065112W WO 2009028460 A1 WO2009028460 A1 WO 2009028460A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
organic thin
derivative
transistor
organic
Prior art date
Application number
PCT/JP2008/065112
Other languages
English (en)
French (fr)
Inventor
Ichiro Tanaka
Hideji Osuga
Hiroaki Nakamura
Yuki Nakano
Original Assignee
Idemitsu Kosan Co., Ltd.
Wakayama University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co., Ltd., Wakayama University filed Critical Idemitsu Kosan Co., Ltd.
Publication of WO2009028460A1 publication Critical patent/WO2009028460A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

　中心に芳香族炭化水素基又は芳香族複素環基を有するベンゾジチオフェン誘導体、少なくとも基板上にゲート電極、ソース電極及びドレイン電極の３端子、絶縁体層並びに有機半導体層が設けられ、ソース－ドレイン間電流をゲート電極に電圧を印加することによって制御する有機薄膜トランジスタにおいて、前記有機半導体層が、中心に芳香族炭化水素基又は芳香族複素環基を有する特定のベンゾジチオフェンを含む有機薄膜トランジスタ、並びに該有機薄膜トランジスタにおいて、ソース－ドレイン間を流れる電流を利用して発光を得、ゲート電極に電圧を印加することによって発光を制御する有機薄膜発光トランジスタによって、大気中に暴露した状態でも電界効果移動度の安定性に優れる有機化合物並びにそれを利用した有機薄膜トランジスタ及び有機薄膜発光トランジスタを提供する。 用紙が足りないときは、コピーして使用する。
PCT/JP2008/065112 2007-08-31 2008-08-25 ベンゾジチオフェン誘導体並びにそれを用いた有機薄膜トランジスタ及び有機薄膜発光トランジスタ WO2009028460A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007226522A JP5299807B2 (ja) 2007-08-31 2007-08-31 ベンゾジチオフェン誘導体並びにそれを用いた有機薄膜トランジスタ及び有機薄膜発光トランジスタ
JP2007-226522 2007-08-31

Publications (1)

Publication Number Publication Date
WO2009028460A1 true WO2009028460A1 (ja) 2009-03-05

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PCT/JP2008/065112 WO2009028460A1 (ja) 2007-08-31 2008-08-25 ベンゾジチオフェン誘導体並びにそれを用いた有機薄膜トランジスタ及び有機薄膜発光トランジスタ

Country Status (3)

Country Link
JP (1) JP5299807B2 (ja)
TW (1) TW200922935A (ja)
WO (1) WO2009028460A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015532768A (ja) * 2012-08-25 2015-11-12 ポリエラ コーポレイションＰｏｌｙｅｒａ Ｃｏｒｐｏｒａｔｉｏｎ 改善された性能を有する発光トランジスタ
JP2018014474A (ja) * 2016-07-07 2018-01-25 日本化薬株式会社 撮像素子用光電変換素子用材料及びそれを含む光電変換素子
WO2021078217A1 (zh) * 2019-10-22 2021-04-29 中国科学院化学研究所 一种并四苯类衍生物及其制备方法与应用
JPWO2021172185A1 (ja) * 2020-02-28 2021-09-02
WO2023168737A1 (zh) * 2022-03-10 2023-09-14 武汉华星光电半导体显示技术有限公司 柔性显示面板

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100000121A (ko) * 2008-06-24 2010-01-06 다우어드밴스드디스플레이머티리얼 유한회사 신규한 유기 발광 화합물 및 이를 발광재료로서 채용하고있는 유기 발광 소자
KR101380060B1 (ko) * 2012-07-13 2014-04-01 주식회사 엘지화학 헤테로환 화합물 및 이를 포함하는 유기 전자 소자
KR102158583B1 (ko) * 2012-12-04 2020-09-23 주식회사 클랩 전자 응용을 위한 관능화 벤조디티오펜 중합체
CN103219463B (zh) 2013-04-08 2015-09-02 上海和辉光电有限公司 有机电子发光器件及其制造方法
JP6478278B2 (ja) * 2015-08-20 2019-03-06 日本化薬株式会社 有機多環芳香族化合物、およびその利用
JP6945836B2 (ja) * 2017-03-17 2021-10-06 株式会社ホタルクス 電界効果トランジスタおよび電子装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006098121A1 (ja) * 2005-03-16 2006-09-21 Konica Minolta Holdings, Inc. 有機半導体材料、有機半導体膜、有機半導体デバイス、有機薄膜トランジスタ及び有機薄膜トランジスタの形成方法
JP2007145833A (ja) * 2005-11-02 2007-06-14 Wakayama Prefecture ベンゾジチオフェン誘導体およびこのベンゾジチオフェン誘導体を発光層として用いた有機エレクトロルミネセンス素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4024439B2 (ja) * 1999-11-25 2007-12-19 凸版印刷株式会社 １，２−ジチオフェン−イル−エチレン誘導体
JP3736252B2 (ja) * 2000-01-26 2006-01-18 凸版印刷株式会社 １，２−ジチオフェン−イル−エチレン誘導体を用いた有機ｅｌ素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006098121A1 (ja) * 2005-03-16 2006-09-21 Konica Minolta Holdings, Inc. 有機半導体材料、有機半導体膜、有機半導体デバイス、有機薄膜トランジスタ及び有機薄膜トランジスタの形成方法
JP2007145833A (ja) * 2005-11-02 2007-06-14 Wakayama Prefecture ベンゾジチオフェン誘導体およびこのベンゾジチオフェン誘導体を発光層として用いた有機エレクトロルミネセンス素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NISHIDE Y. ET AL.: "Synthesis and Optical Properties of Fluorescent Materials Derived from TricyclicHeterocycles", PHOSPHORUS, SULFUR, AND SILICON AND THE RELATED ELEMENTS, vol. 180, no. 5-6, 2005, pages 1479 - 1480 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015532768A (ja) * 2012-08-25 2015-11-12 ポリエラ コーポレイションＰｏｌｙｅｒａ Ｃｏｒｐｏｒａｔｉｏｎ 改善された性能を有する発光トランジスタ
JP2018014474A (ja) * 2016-07-07 2018-01-25 日本化薬株式会社 撮像素子用光電変換素子用材料及びそれを含む光電変換素子
WO2021078217A1 (zh) * 2019-10-22 2021-04-29 中国科学院化学研究所 一种并四苯类衍生物及其制备方法与应用
JPWO2021172185A1 (ja) * 2020-02-28 2021-09-02
WO2021172185A1 (ja) * 2020-02-28 2021-09-02 日本化薬株式会社 縮合多環芳香族化合物
CN115151552A (zh) * 2020-02-28 2022-10-04 日本化药株式会社 缩合多环芳香族化合物
JP7709425B2 (ja) 2020-02-28 2025-07-16 日本化薬株式会社 縮合多環芳香族化合物
WO2023168737A1 (zh) * 2022-03-10 2023-09-14 武汉华星光电半导体显示技术有限公司 柔性显示面板

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JP5299807B2 (ja) 2013-09-25
JP2009057326A (ja) 2009-03-19
TW200922935A (en) 2009-06-01

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