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WO2009025339A1 - Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt - Google Patents

Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt Download PDF

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Publication number
WO2009025339A1
WO2009025339A1 PCT/JP2008/064952 JP2008064952W WO2009025339A1 WO 2009025339 A1 WO2009025339 A1 WO 2009025339A1 JP 2008064952 W JP2008064952 W JP 2008064952W WO 2009025339 A1 WO2009025339 A1 WO 2009025339A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
silicon single
igbt
wafer
crystal wafer
Prior art date
Application number
PCT/JP2008/064952
Other languages
French (fr)
Japanese (ja)
Inventor
Toshiaki Ono
Shigeru Umeno
Koji Kato
Masataka Hourai
Manabu Nishimoto
Original Assignee
Sumco Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corporation filed Critical Sumco Corporation
Priority to JP2009529065A priority Critical patent/JPWO2009025339A1/en
Publication of WO2009025339A1 publication Critical patent/WO2009025339A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Provided is a method for manufacturing a wafer, which has a reduced leak current and a small resistivity fluctuation, with an increased pulling speed margin. A silicon single crystal wafer composed of silicon single crystal grown by Czochralski method is also provided for IGBT. In the wafer, COP defects, dislocation clusters and an OSF region are eliminated in the entire region in a crystal diameter direction. The wafer has an interstitial oxygen concentration of 8.5x1017 atoms/cm3 or less and a resistivity fluctuation of 5% or less within a wafer surface.
PCT/JP2008/064952 2007-08-21 2008-08-21 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt WO2009025339A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529065A JPWO2009025339A1 (en) 2007-08-21 2008-08-21 Silicon single crystal wafer for IGBT and manufacturing method of silicon single crystal wafer for IGBT

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007215334 2007-08-21
JP2007-215334 2007-08-21

Publications (1)

Publication Number Publication Date
WO2009025339A1 true WO2009025339A1 (en) 2009-02-26

Family

ID=40378239

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064952 WO2009025339A1 (en) 2007-08-21 2008-08-21 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt

Country Status (2)

Country Link
JP (1) JPWO2009025339A1 (en)
WO (1) WO2009025339A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018523626A (en) * 2015-08-19 2018-08-23 エスケー シルトロン カンパニー リミテッド Single crystal ingot growth apparatus and growth method thereof
EP4350055A1 (en) * 2022-10-06 2024-04-10 Siltronic AG Method for producing a single crystal of silicon and semiconductor wafer of monocrystalline silicon

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (en) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd Method for manufacturing silicon single crystal, method for designing apparatus for manufacturing silicon single crystal, and apparatus for manufacturing silicon single crystal
JP2006312575A (en) * 2005-04-08 2006-11-16 Sumco Corp Silicon wafer and manufacturing method thereof
JP2007191350A (en) * 2006-01-19 2007-08-02 Sumco Corp Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5188673B2 (en) * 2005-06-09 2013-04-24 株式会社Ｓｕｍｃｏ Silicon wafer for IGBT and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (en) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd Method for manufacturing silicon single crystal, method for designing apparatus for manufacturing silicon single crystal, and apparatus for manufacturing silicon single crystal
JP2006312575A (en) * 2005-04-08 2006-11-16 Sumco Corp Silicon wafer and manufacturing method thereof
JP2007191350A (en) * 2006-01-19 2007-08-02 Sumco Corp Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018523626A (en) * 2015-08-19 2018-08-23 エスケー シルトロン カンパニー リミテッド Single crystal ingot growth apparatus and growth method thereof
EP4350055A1 (en) * 2022-10-06 2024-04-10 Siltronic AG Method for producing a single crystal of silicon and semiconductor wafer of monocrystalline silicon
WO2024074431A1 (en) * 2022-10-06 2024-04-11 Siltronic Ag Process for manufacturing a silicon single crystal, and semiconductor wafer made of single-crystal silicon

Also Published As

Publication number Publication date
JPWO2009025339A1 (en) 2010-11-25

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