WO2009008446A1 - Resist underlayer film forming composition, and method for resist pattern formation using the composition - Google Patents
Resist underlayer film forming composition, and method for resist pattern formation using the composition Download PDFInfo
- Publication number
- WO2009008446A1 WO2009008446A1 PCT/JP2008/062399 JP2008062399W WO2009008446A1 WO 2009008446 A1 WO2009008446 A1 WO 2009008446A1 JP 2008062399 W JP2008062399 W JP 2008062399W WO 2009008446 A1 WO2009008446 A1 WO 2009008446A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- composition
- underlayer film
- film forming
- resist underlayer
- polymer
- Prior art date
Links
- 230000007261 regionalization Effects 0.000 title 1
- 229920000642 polymer Polymers 0.000 abstract 3
- 150000001851 cinnamic acid derivatives Chemical class 0.000 abstract 2
- 238000001312 dry etching Methods 0.000 abstract 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
- C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
- C08G63/12—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds
- C08G63/16—Dicarboxylic acids and dihydroxy compounds
- C08G63/20—Polyesters having been prepared in the presence of compounds having one reactive group or more than two reactive groups
- C08G63/21—Polyesters having been prepared in the presence of compounds having one reactive group or more than two reactive groups in the presence of unsaturated monocarboxylic acids or unsaturated monohydric alcohols or reactive derivatives thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Structural Engineering (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Architecture (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Epoxy Resins (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
[PROBLEMS] To provide a composition for forming a resist underlayer film which is large in selection ratio of dry etching speed and, at the same time, can realize desired k value and refractive index (n) at a short wavelength as in an ArF excimer laser (wavelength: 193 nm). [MEANS FOR SOLVING PROBLEMS] A resist underlayer film forming composition for lithography, comprising a polymer and a solvent, the polymer having a main chain containing a cinnamic acid derivative. The cinnamic acid derivative is introduced into the main chain of the polymer through an ester bond, or an ester bond and an ether bond.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009522657A JP5158381B2 (en) | 2007-07-11 | 2008-07-09 | Resist underlayer film forming composition and resist pattern forming method using the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-182140 | 2007-07-11 | ||
JP2007182140 | 2007-07-11 | ||
JP2007-220317 | 2007-08-27 | ||
JP2007220317 | 2007-08-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009008446A1 true WO2009008446A1 (en) | 2009-01-15 |
Family
ID=40228617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/062399 WO2009008446A1 (en) | 2007-07-11 | 2008-07-09 | Resist underlayer film forming composition, and method for resist pattern formation using the composition |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5158381B2 (en) |
TW (1) | TWI432905B (en) |
WO (1) | WO2009008446A1 (en) |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010181453A (en) * | 2009-02-03 | 2010-08-19 | Nissan Chem Ind Ltd | Composition for forming resist underfilm and method for forming resist pattern using the composition |
US20110230058A1 (en) * | 2008-11-27 | 2011-09-22 | Nissan Chemical Industries, Ltd. | Composition for forming resist underlayer film with reduced outgassing |
WO2015019961A1 (en) * | 2013-08-08 | 2015-02-12 | 日産化学工業株式会社 | Resist underlayer film forming composition containing polymer which contains nitrogen-containing ring compound |
KR20170070017A (en) | 2014-10-21 | 2017-06-21 | 닛산 가가쿠 고교 가부시키 가이샤 | Resist underlay film-forming composition |
KR20170134380A (en) | 2015-04-03 | 2017-12-06 | 닛산 가가쿠 고교 가부시키 가이샤 | A step substrate coating composition having a photo-crosslinking group |
KR20180120692A (en) | 2016-03-10 | 2018-11-06 | 닛산 가가쿠 가부시키가이샤 | A step substrate coating composition comprising a compound having a photo-crosslinking group by unsaturated bond between carbon atoms |
WO2019069502A1 (en) | 2017-10-06 | 2019-04-11 | 三井化学株式会社 | Resin material for forming underlayer film, resist underlayer film, method for producing resist underlayer film, and layered product |
KR20190039472A (en) | 2016-08-08 | 2019-04-12 | 닛산 가가쿠 가부시키가이샤 | Photocurable composition and method for manufacturing semiconductor device |
KR20190131543A (en) | 2017-04-03 | 2019-11-26 | 닛산 가가쿠 가부시키가이샤 | Stepped substrate coating composition comprising polyether resin having optical crosslinker |
KR20190137845A (en) | 2017-04-14 | 2019-12-11 | 닛산 가가쿠 가부시키가이샤 | Stepped substrate coating film-forming composition comprising a plasma curable compound by unsaturated bonds between carbon atoms |
KR20200003087A (en) | 2017-05-31 | 2020-01-08 | 미쓰이 가가쿠 가부시키가이샤 | Material for forming an underlayer film, a method for manufacturing a resist underlayer film, a resist underlayer film, and a laminate |
KR20200038921A (en) | 2017-08-09 | 2020-04-14 | 닛산 가가쿠 가부시키가이샤 | Photocurable stepped substrate coating composition containing a crosslinkable compound |
KR20200052884A (en) | 2017-09-13 | 2020-05-15 | 닛산 가가쿠 가부시키가이샤 | Stepped substrate coating composition comprising a compound having a curable functional group |
WO2020162183A1 (en) | 2019-02-07 | 2020-08-13 | 三井化学株式会社 | Material for underlayer film formation use, resist underlayer film, and laminate |
KR20200098595A (en) | 2017-12-20 | 2020-08-20 | 닛산 가가쿠 가부시키가이샤 | Photocurable silicone-containing coating film forming composition |
KR20210138665A (en) | 2019-03-12 | 2021-11-19 | 닛산 가가쿠 가부시키가이샤 | Resist underlayer film forming composition |
KR20220038346A (en) | 2019-07-18 | 2022-03-28 | 닛산 가가쿠 가부시키가이샤 | Step substrate coating composition comprising a compound having a curable functional group |
WO2022196662A1 (en) * | 2021-03-16 | 2022-09-22 | 日産化学株式会社 | Resist underlayer film formation composition |
WO2024048487A1 (en) * | 2022-08-29 | 2024-03-07 | 日産化学株式会社 | Composition for forming gap-filling material |
WO2024106454A1 (en) | 2022-11-16 | 2024-05-23 | 日産化学株式会社 | Resist underlayer film-forming composition containing curcumin derivative |
WO2024128190A1 (en) | 2022-12-15 | 2024-06-20 | 日産化学株式会社 | Composition for forming resist underlayer film |
KR20240110876A (en) | 2021-11-30 | 2024-07-16 | 닛산 가가쿠 가부시키가이샤 | Composition for forming a resist underlayer film containing a hydroxycinnamic acid derivative |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20250042775A (en) * | 2022-07-29 | 2025-03-27 | 닛산 가가쿠 가부시키가이샤 | Composition for forming a resist underlayer film |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62215606A (en) * | 1986-03-18 | 1987-09-22 | Agency Of Ind Science & Technol | Manufacturing method of photosensitive resin |
WO2003017002A1 (en) * | 2001-08-20 | 2003-02-27 | Nissan Chemical Industries, Ltd. | Composition for forming antireflective film for use in lithography |
JP2004533637A (en) * | 2001-04-17 | 2004-11-04 | ブルーワー サイエンス アイ エヌ シー. | Anti-reflective coating composition with improved spin bowl compatibility |
-
2008
- 2008-07-09 JP JP2009522657A patent/JP5158381B2/en active Active
- 2008-07-09 WO PCT/JP2008/062399 patent/WO2009008446A1/en active Application Filing
- 2008-07-11 TW TW97126495A patent/TWI432905B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62215606A (en) * | 1986-03-18 | 1987-09-22 | Agency Of Ind Science & Technol | Manufacturing method of photosensitive resin |
JP2004533637A (en) * | 2001-04-17 | 2004-11-04 | ブルーワー サイエンス アイ エヌ シー. | Anti-reflective coating composition with improved spin bowl compatibility |
WO2003017002A1 (en) * | 2001-08-20 | 2003-02-27 | Nissan Chemical Industries, Ltd. | Composition for forming antireflective film for use in lithography |
Cited By (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110230058A1 (en) * | 2008-11-27 | 2011-09-22 | Nissan Chemical Industries, Ltd. | Composition for forming resist underlayer film with reduced outgassing |
JP2010181453A (en) * | 2009-02-03 | 2010-08-19 | Nissan Chem Ind Ltd | Composition for forming resist underfilm and method for forming resist pattern using the composition |
US10113083B2 (en) | 2013-08-08 | 2018-10-30 | Nissan Chemical Industries, Ltd. | Resist underlayer film-forming composition containing polymer which contains nitrogen-containing ring compound |
CN105431780A (en) * | 2013-08-08 | 2016-03-23 | 日产化学工业株式会社 | Resist underlayer film forming composition containing polymer which contains nitrogen-containing ring compound |
KR20160040521A (en) * | 2013-08-08 | 2016-04-14 | 닛산 가가쿠 고교 가부시키 가이샤 | Resist underlayer film forming composition containing polymer which contains nitrogen-containing ring compound |
JPWO2015019961A1 (en) * | 2013-08-08 | 2017-03-02 | 日産化学工業株式会社 | Resist underlayer film forming composition comprising a polymer containing a nitrogen-containing ring compound |
KR102307200B1 (en) * | 2013-08-08 | 2021-10-01 | 닛산 가가쿠 가부시키가이샤 | Resist underlayer film forming composition containing polymer which contains nitrogen-containing ring compound |
WO2015019961A1 (en) * | 2013-08-08 | 2015-02-12 | 日産化学工業株式会社 | Resist underlayer film forming composition containing polymer which contains nitrogen-containing ring compound |
KR20170070017A (en) | 2014-10-21 | 2017-06-21 | 닛산 가가쿠 고교 가부시키 가이샤 | Resist underlay film-forming composition |
US10242871B2 (en) | 2014-10-21 | 2019-03-26 | Nissan Chemical Industries, Ltd. | Resist underlayer film-forming composition including a compound having an amino group protected with a tert-butoxycarbonyl group |
KR20170134380A (en) | 2015-04-03 | 2017-12-06 | 닛산 가가쿠 고교 가부시키 가이샤 | A step substrate coating composition having a photo-crosslinking group |
JPWO2016159358A1 (en) * | 2015-04-03 | 2018-03-08 | 日産化学工業株式会社 | Stepped substrate coating composition having a photocrosslinking group |
US11155684B2 (en) | 2015-04-03 | 2021-10-26 | Nissan Chemical Industries, Ltd. | Photocrosslinkable group-containing composition for coating stepped substrate |
KR20180120692A (en) | 2016-03-10 | 2018-11-06 | 닛산 가가쿠 가부시키가이샤 | A step substrate coating composition comprising a compound having a photo-crosslinking group by unsaturated bond between carbon atoms |
US11681223B2 (en) | 2016-08-08 | 2023-06-20 | Nissan Chemical Corporation | Photocurable composition and method for producing semiconductor device |
US12147158B2 (en) | 2016-08-08 | 2024-11-19 | Nissan Chemical Corporation | Photocurable composition and method for producing semiconductor device |
KR20190039472A (en) | 2016-08-08 | 2019-04-12 | 닛산 가가쿠 가부시키가이샤 | Photocurable composition and method for manufacturing semiconductor device |
KR20190131543A (en) | 2017-04-03 | 2019-11-26 | 닛산 가가쿠 가부시키가이샤 | Stepped substrate coating composition comprising polyether resin having optical crosslinker |
US10871712B2 (en) | 2017-04-03 | 2020-12-22 | Nissan Chemical Corporation | Stepped substrate-coating composition containing polyether resin having photocrosslinkable group |
KR102690024B1 (en) | 2017-04-14 | 2024-08-05 | 닛산 가가쿠 가부시키가이샤 | Multileveled substrate coating film forming composition containing plasma-curable compound based on unsaturated bonds between carbon atoms |
KR20240119168A (en) | 2017-04-14 | 2024-08-06 | 닛산 가가쿠 가부시키가이샤 | Resist underlayer film forming composition |
US11385546B2 (en) | 2017-04-14 | 2022-07-12 | Nissan Chemical Corporation | Multi-level substrate coating film-forming composition containing plasma-curable compound based on unsaturated bonds between carbon atoms |
KR20230148380A (en) | 2017-04-14 | 2023-10-24 | 닛산 가가쿠 가부시키가이샤 | Multileveled substrate coating film forming composition containing plasma-curable compound based on unsaturated bonds between carbon atoms |
KR20190137845A (en) | 2017-04-14 | 2019-12-11 | 닛산 가가쿠 가부시키가이샤 | Stepped substrate coating film-forming composition comprising a plasma curable compound by unsaturated bonds between carbon atoms |
KR20200003087A (en) | 2017-05-31 | 2020-01-08 | 미쓰이 가가쿠 가부시키가이샤 | Material for forming an underlayer film, a method for manufacturing a resist underlayer film, a resist underlayer film, and a laminate |
US11886119B2 (en) | 2017-05-31 | 2024-01-30 | Mitsui Chemicals, Inc. | Material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate |
KR20200038921A (en) | 2017-08-09 | 2020-04-14 | 닛산 가가쿠 가부시키가이샤 | Photocurable stepped substrate coating composition containing a crosslinkable compound |
US11454889B2 (en) | 2017-08-09 | 2022-09-27 | Nissan Chemical Corporation | Crosslinkable compound-containing photocurable stepped substrate-coating composition |
KR20200052884A (en) | 2017-09-13 | 2020-05-15 | 닛산 가가쿠 가부시키가이샤 | Stepped substrate coating composition comprising a compound having a curable functional group |
US11674051B2 (en) | 2017-09-13 | 2023-06-13 | Nissan Chemical Corporation | Stepped substrate coating composition containing compound having curable functional group |
KR20200051752A (en) | 2017-10-06 | 2020-05-13 | 미쓰이 가가쿠 가부시키가이샤 | Resin material for forming underlayer film, resist underlayer film, method for manufacturing resist underlayer film, and laminate |
US11599025B2 (en) | 2017-10-06 | 2023-03-07 | Mitsui Chemicals, Inc. | Resin material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate |
WO2019069502A1 (en) | 2017-10-06 | 2019-04-11 | 三井化学株式会社 | Resin material for forming underlayer film, resist underlayer film, method for producing resist underlayer film, and layered product |
KR20200098595A (en) | 2017-12-20 | 2020-08-20 | 닛산 가가쿠 가부시키가이샤 | Photocurable silicone-containing coating film forming composition |
KR20210112361A (en) | 2019-02-07 | 2021-09-14 | 미쓰이 가가쿠 가부시키가이샤 | Materials for forming underlayer films, resist underlayer films and laminates |
WO2020162183A1 (en) | 2019-02-07 | 2020-08-13 | 三井化学株式会社 | Material for underlayer film formation use, resist underlayer film, and laminate |
US12044969B2 (en) | 2019-03-12 | 2024-07-23 | Nissan Chemical Corporation | Resist underlayer film-forming composition |
KR20210138665A (en) | 2019-03-12 | 2021-11-19 | 닛산 가가쿠 가부시키가이샤 | Resist underlayer film forming composition |
KR20220038346A (en) | 2019-07-18 | 2022-03-28 | 닛산 가가쿠 가부시키가이샤 | Step substrate coating composition comprising a compound having a curable functional group |
KR20230158054A (en) * | 2021-03-16 | 2023-11-17 | 닛산 가가쿠 가부시키가이샤 | Resist underlayer film forming composition |
WO2022196662A1 (en) * | 2021-03-16 | 2022-09-22 | 日産化学株式会社 | Resist underlayer film formation composition |
KR102781156B1 (en) | 2021-03-16 | 2025-03-14 | 닛산 가가쿠 가부시키가이샤 | Composition for forming a resist underlayer film |
KR20240110876A (en) | 2021-11-30 | 2024-07-16 | 닛산 가가쿠 가부시키가이샤 | Composition for forming a resist underlayer film containing a hydroxycinnamic acid derivative |
WO2024048487A1 (en) * | 2022-08-29 | 2024-03-07 | 日産化学株式会社 | Composition for forming gap-filling material |
WO2024106454A1 (en) | 2022-11-16 | 2024-05-23 | 日産化学株式会社 | Resist underlayer film-forming composition containing curcumin derivative |
KR20250107863A (en) | 2022-11-16 | 2025-07-14 | 닛산 가가쿠 가부시키가이샤 | Composition for forming a resist underlayer film having a curcumin derivative |
WO2024128190A1 (en) | 2022-12-15 | 2024-06-20 | 日産化学株式会社 | Composition for forming resist underlayer film |
Also Published As
Publication number | Publication date |
---|---|
TWI432905B (en) | 2014-04-01 |
JPWO2009008446A1 (en) | 2010-09-09 |
TW200928591A (en) | 2009-07-01 |
JP5158381B2 (en) | 2013-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009008446A1 (en) | Resist underlayer film forming composition, and method for resist pattern formation using the composition | |
WO2009057458A1 (en) | Composition for forming resist underlayer film and method of forming resist pattern from the same | |
WO2009041400A1 (en) | Negative resist composition and resist pattern-forming method using the same | |
WO2008081768A1 (en) | Alicyclic structure-containing chloromethyl ether, polymerizable monomer for photoresist, and method for producing the same | |
WO2009034998A1 (en) | Composition containing polymer having nitrogenous silyl group for forming resist underlayer film | |
WO2008078677A1 (en) | Composition for formation of antireflection film and pattern formation method using the same | |
TW200739268A (en) | Antireflection film composition, substrate, and patterning process | |
WO2008084853A1 (en) | Colored composition, color filter, and method for production of the color filter | |
SG158792A1 (en) | Chemically-amplified positive resist composition and patterning process thereof | |
WO2005074606A3 (en) | Method of photolithography using a fluid and a system thereof | |
TW200951625A (en) | Resist underlayer film forming composition and method for forming resist pattern by use of said composition | |
EP2095189A1 (en) | Composition for forming resist foundation film containing low molecular weight dissolution accelerator | |
WO2008111247A1 (en) | Photosensitive composition, photosensitive film, method for formation of permanent pattern, and print substrate | |
TW200621811A (en) | Fluorinated monomer having cyclic structure, making method, polymer, photoresist composition and patterning process | |
WO2008134555A3 (en) | Polymeric dyes based on polymerizable vinyl-group containing p-nitrophenyl-azo salicylic acid derivatives | |
TW200613923A (en) | Protective film-forming composition for immersion exposure and pattern forming method using the same | |
WO2004044654A3 (en) | Compositions and processes for nanoimprinting | |
WO2009091704A3 (en) | Aromatic fluorine-free photoacid generators and photoresist compositions containing the same | |
WO2002069043A3 (en) | Low absorbing resists for 157 nm lithography | |
DE602008000023D1 (en) | Lithographic printing plate precursor and method of making a lithographic printing plate | |
TW200628992A (en) | Anti-reflective coating forming composition for lithography containing sulfonic acid ester | |
WO2005089355A3 (en) | Environmentally friendly photoacid generators (pags) with no perfluorooctyl sulfonates (pfos) | |
ATE426189T1 (en) | POSITIVE RADIATION SENSITIVE RESIN COMPOSITION | |
MY153129A (en) | Composition for formation of antireflective film, and pattern formation method using the composition | |
TW200517692A (en) | Optical component formation method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08778008 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2009522657 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08778008 Country of ref document: EP Kind code of ref document: A1 |