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WO2008132971A1 - 半導体メモリ - Google Patents

半導体メモリ Download PDF

Info

Publication number
WO2008132971A1
WO2008132971A1 PCT/JP2008/056854 JP2008056854W WO2008132971A1 WO 2008132971 A1 WO2008132971 A1 WO 2008132971A1 JP 2008056854 W JP2008056854 W JP 2008056854W WO 2008132971 A1 WO2008132971 A1 WO 2008132971A1
Authority
WO
WIPO (PCT)
Prior art keywords
current
bit line
memory cell
drain
voltage
Prior art date
Application number
PCT/JP2008/056854
Other languages
English (en)
French (fr)
Inventor
Noboru Sakimura
Koichi Takeda
Tadahiko Sugibayashi
Ryuusuke Nebashi
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Publication of WO2008132971A1 publication Critical patent/WO2008132971A1/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)

Abstract

　クランプ用トランジスタのソース電圧とドレイン電圧が定常状態になるまでの時間を短縮可能な半導体メモリを提供する。 　半導体メモリは、記憶情報によって抵抗値が変化する記憶素子１１ｂを含むメモリセル１１と、メモリセル１１と接続するビット線２と、ビット線２に任意の電位を印加してメモリセル１１に電流を流しその電流を検出する電流検出手段４を含み、電流検出手段４は、ビット線２の電位を反転増幅する反転増幅手段４１、電源と接続された検出用負荷手段４２、ゲートが反転増幅手段４１の出力を受けドレインが電源から検出用負荷手段４２を介して電流を受けソースがビット線２に任意の電位を印加しメモリセル１１に電流を供給するクランプ用トランジスタＭ１、及びクランプ用トランジスタＭ１のソースの電圧とドレインの電圧が定常状態になるまでドレインに補助電流を供給し、定常状態になった場合に補助電流の供給を停止する電流供給手段Ｍ２を含む。
PCT/JP2008/056854 2007-04-25 2008-04-07 半導体メモリ WO2008132971A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-115751 2007-04-25
JP2007115751 2007-04-25

Publications (1)

Publication Number Publication Date
WO2008132971A1 true WO2008132971A1 (ja) 2008-11-06

Family

ID=39925430

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056854 WO2008132971A1 (ja) 2007-04-25 2008-04-07 半導体メモリ

Country Status (1)

Country Link
WO (1) WO2008132971A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013145733A1 (ja) * 2012-03-29 2013-10-03 パナソニック株式会社 クロスポイント型抵抗変化不揮発性記憶装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63253598A (ja) * 1987-04-10 1988-10-20 Nec Ic Microcomput Syst Ltd Ｒｏｍ装置
JPS63313397A (ja) * 1987-06-16 1988-12-21 Ricoh Co Ltd 記憶装置のセンスアンプ回路装置
JPH07169290A (ja) * 1993-12-14 1995-07-04 Nec Corp 半導体記憶装置
JPH11120783A (ja) * 1997-10-09 1999-04-30 Nec Corp 半導体記憶装置
JP2004071067A (ja) * 2002-08-07 2004-03-04 Sharp Corp メモリセル情報の読み出し回路および半導体記憶装置
WO2006085459A1 (ja) * 2005-02-08 2006-08-17 Nec Corporation 半導体記憶装置及び半導体記憶装置の読み出し方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63253598A (ja) * 1987-04-10 1988-10-20 Nec Ic Microcomput Syst Ltd Ｒｏｍ装置
JPS63313397A (ja) * 1987-06-16 1988-12-21 Ricoh Co Ltd 記憶装置のセンスアンプ回路装置
JPH07169290A (ja) * 1993-12-14 1995-07-04 Nec Corp 半導体記憶装置
JPH11120783A (ja) * 1997-10-09 1999-04-30 Nec Corp 半導体記憶装置
JP2004071067A (ja) * 2002-08-07 2004-03-04 Sharp Corp メモリセル情報の読み出し回路および半導体記憶装置
WO2006085459A1 (ja) * 2005-02-08 2006-08-17 Nec Corporation 半導体記憶装置及び半導体記憶装置の読み出し方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013145733A1 (ja) * 2012-03-29 2013-10-03 パナソニック株式会社 クロスポイント型抵抗変化不揮発性記憶装置
JP5379337B1 (ja) * 2012-03-29 2013-12-25 パナソニック株式会社 クロスポイント型抵抗変化不揮発性記憶装置
US9053788B2 (en) 2012-03-29 2015-06-09 Panasonic Intellectual Property Management Co., Ltd. Cross-point variable resistance nonvolatile memory device

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