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WO2008111533A1 - パターン状の絶縁性微粒子膜およびそれを用いた電子部品、マイクロマシン、光学部品ならびにパターン状の絶縁性微粒子膜の製造方法 - Google Patents

パターン状の絶縁性微粒子膜およびそれを用いた電子部品、マイクロマシン、光学部品ならびにパターン状の絶縁性微粒子膜の製造方法 Download PDF

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Publication number
WO2008111533A1
WO2008111533A1 PCT/JP2008/054211 JP2008054211W WO2008111533A1 WO 2008111533 A1 WO2008111533 A1 WO 2008111533A1 JP 2008054211 W JP2008054211 W JP 2008054211W WO 2008111533 A1 WO2008111533 A1 WO 2008111533A1
Authority
WO
WIPO (PCT)
Prior art keywords
fine particle
insulating fine
particle film
patterned insulating
film
Prior art date
Application number
PCT/JP2008/054211
Other languages
English (en)
French (fr)
Inventor
Kazufumi Ogawa
Yoshiaki Watanabe
Original Assignee
Kazufumi Ogawa
Yoshiaki Watanabe
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kazufumi Ogawa, Yoshiaki Watanabe filed Critical Kazufumi Ogawa
Publication of WO2008111533A1 publication Critical patent/WO2008111533A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02285—Langmuir-Blodgett techniques
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Formation Of Insulating Films (AREA)
  • Micromachines (AREA)
  • Insulating Bodies (AREA)

Abstract

  絶縁性微粒子本来の機能を損なうことなく、任意の基材表面にパターン状に絶縁性微粒子を１層のみ並べたパターン状の単層絶縁性微粒子膜、および複数層累積したパターン状の絶縁性微粒子累積膜、ならびにそれらの製造方法を提供する。 　パターン状の絶縁性微粒子膜１、３は、第１の官能基を有する第１の膜化合物の形成するパターン状の被膜で被覆された基材１４の表面に、第１の官能基とカップリング反応により結合を形成する第１のカップリング反応基を有する第１のカップリング剤の形成する被膜で被覆された反応性微粒子４２が配列した絶縁性の微粒子層が、カップリング反応により形成される結合を介して１層結合固定されている。あるいは、さらにその上に第１のカップリング反応基と反応する膜化合物の被膜で被覆された微粒子３４および反応性微粒子４２が交互に結合固定されている。
PCT/JP2008/054211 2007-03-09 2008-03-07 パターン状の絶縁性微粒子膜およびそれを用いた電子部品、マイクロマシン、光学部品ならびにパターン状の絶縁性微粒子膜の製造方法 WO2008111533A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-060363 2007-03-09
JP2007060363A JP5611503B2 (ja) 2007-03-09 2007-03-09 パターン状の絶縁性微粒子膜およびその製造方法ならびにそれを用いた電子部品、マイクロマシン、光学部品

Publications (1)

Publication Number Publication Date
WO2008111533A1 true WO2008111533A1 (ja) 2008-09-18

Family

ID=39759471

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054211 WO2008111533A1 (ja) 2007-03-09 2008-03-07 パターン状の絶縁性微粒子膜およびそれを用いた電子部品、マイクロマシン、光学部品ならびにパターン状の絶縁性微粒子膜の製造方法

Country Status (2)

Country Link
JP (1) JP5611503B2 (ja)
WO (1) WO2008111533A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150175411A1 (en) * 2013-12-19 2015-06-25 Sk Innovation Co., Ltd. Method for fabricating nano structure including dielectric particle supporters

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1166654A (ja) * 1997-08-18 1999-03-09 Hitachi Ltd 微細構造の作製法、微細構造、磁気センサ、磁気記録媒体および光磁気記録媒体
JPH11350153A (ja) * 1998-06-09 1999-12-21 Mitsuboshi Belting Ltd 金属微粒子修飾基板の製造方法
JP2001184620A (ja) * 1999-12-27 2001-07-06 Toshiba Corp 記録媒体および記録媒体の製造方法
US6420086B1 (en) * 1999-02-19 2002-07-16 Micron Technology, Inc. Methods of forming patterned constructions, methods of patterning semiconductive substrates, and methods of forming field emission displays
JP2003168606A (ja) * 2001-01-24 2003-06-13 Matsushita Electric Ind Co Ltd 微粒子配列体とその製造方法及びこれを用いたデバイス
JP2007118276A (ja) * 2005-10-26 2007-05-17 Kagawa Univ 単層微粒子膜と累積微粒子膜およびそれらの製造方法。

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL138988A (en) * 2000-10-12 2005-09-25 Yissum Res Dev Co Dendritically amplified detection method
AU2003300371A1 (en) * 2002-12-20 2004-07-22 Minerva Biotechnologies Corporation Optical devices and methods involving nanoparticles
JP4412052B2 (ja) * 2003-10-28 2010-02-10 富士ゼロックス株式会社 複合材およびその製造方法
JP4444713B2 (ja) * 2004-03-29 2010-03-31 株式会社アドバネクス 離型性金型とその製造方法、及び成型品の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1166654A (ja) * 1997-08-18 1999-03-09 Hitachi Ltd 微細構造の作製法、微細構造、磁気センサ、磁気記録媒体および光磁気記録媒体
JPH11350153A (ja) * 1998-06-09 1999-12-21 Mitsuboshi Belting Ltd 金属微粒子修飾基板の製造方法
US6420086B1 (en) * 1999-02-19 2002-07-16 Micron Technology, Inc. Methods of forming patterned constructions, methods of patterning semiconductive substrates, and methods of forming field emission displays
JP2001184620A (ja) * 1999-12-27 2001-07-06 Toshiba Corp 記録媒体および記録媒体の製造方法
JP2003168606A (ja) * 2001-01-24 2003-06-13 Matsushita Electric Ind Co Ltd 微粒子配列体とその製造方法及びこれを用いたデバイス
JP2007118276A (ja) * 2005-10-26 2007-05-17 Kagawa Univ 単層微粒子膜と累積微粒子膜およびそれらの製造方法。

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150175411A1 (en) * 2013-12-19 2015-06-25 Sk Innovation Co., Ltd. Method for fabricating nano structure including dielectric particle supporters
US9725313B2 (en) * 2013-12-19 2017-08-08 Sk Innovation Co., Ltd. Method for fabricating NANO structure including dielectric particle supporters

Also Published As

Publication number Publication date
JP2008226990A (ja) 2008-09-25
JP5611503B2 (ja) 2014-10-22

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