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WO2008108350A1 - 容量素子、プリント配線基板、半導体パッケージ及び半導体回路 - Google Patents

容量素子、プリント配線基板、半導体パッケージ及び半導体回路 Download PDF

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Publication number
WO2008108350A1
WO2008108350A1 PCT/JP2008/053808 JP2008053808W WO2008108350A1 WO 2008108350 A1 WO2008108350 A1 WO 2008108350A1 JP 2008053808 W JP2008053808 W JP 2008053808W WO 2008108350 A1 WO2008108350 A1 WO 2008108350A1
Authority
WO
WIPO (PCT)
Prior art keywords
capacitance element
semiconductor
capacitance
constitute
circuit board
Prior art date
Application number
PCT/JP2008/053808
Other languages
English (en)
French (fr)
Inventor
Koichiro Masuda
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to CN200880007541XA priority Critical patent/CN101627450B/zh
Priority to US12/530,388 priority patent/US8441774B2/en
Priority to JP2009502582A priority patent/JP5333776B2/ja
Publication of WO2008108350A1 publication Critical patent/WO2008108350A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/01—Form of self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/35—Feed-through capacitors or anti-noise capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/023—Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
    • H05K1/0231—Capacitors or dielectric substances
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H05K1/186—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10689—Leaded Integrated Circuit [IC] package, e.g. dual-in-line [DIL]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2018—Presence of a frame in a printed circuit or printed circuit assembly

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

回路中で発生した高周波なノイズを効果的に低減し得る容量素子を提供する。内部と外部を分離するように閉じて囲みをつくる形状である容量形成部１００を備え、容量形成部１００は電極１１０と対向電極１１１と誘電体層１２０とで構成し、電極１１０の外周部と、内周部にそれぞれ１つ以上の引出端子（外周部引出端子１４０が１つ以上，内周部引出端子１３０が一つ以上）を具備する容量素子１とした。容量素子を基板の内部あるいは基板表面に実装してプリント配線基板を構成する。容量素子１対象半導体回路部に配置して半導体パッケージを構成する。また、容量素子を対象機能回路部３０１に配置して半導体回路を構成する。 　
PCT/JP2008/053808 2007-03-08 2008-03-04 容量素子、プリント配線基板、半導体パッケージ及び半導体回路 WO2008108350A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880007541XA CN101627450B (zh) 2007-03-08 2008-03-04 电容元件、印刷布线板、半导体封装以及半导体电路
US12/530,388 US8441774B2 (en) 2007-03-08 2008-03-04 Capacitance element, printed circuit board, semiconductor package, and semiconductor circuit
JP2009502582A JP5333776B2 (ja) 2007-03-08 2008-03-04 容量素子、プリント配線基板、半導体パッケージ及び半導体回路

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007058915 2007-03-08
JP2007-058915 2007-03-08

Publications (1)

Publication Number Publication Date
WO2008108350A1 true WO2008108350A1 (ja) 2008-09-12

Family

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PCT/JP2008/053808 WO2008108350A1 (ja) 2007-03-08 2008-03-04 容量素子、プリント配線基板、半導体パッケージ及び半導体回路

Country Status (4)

Country Link
US (1) US8441774B2 (ja)
JP (1) JP5333776B2 (ja)
CN (1) CN101627450B (ja)
WO (1) WO2008108350A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5333776B2 (ja) * 2007-03-08 2013-11-06 日本電気株式会社 容量素子、プリント配線基板、半導体パッケージ及び半導体回路
TWI358820B (en) * 2008-02-29 2012-02-21 Chunghwa Picture Tubes Ltd Active device array substrate and fabrication meth
TWI347810B (en) * 2008-10-03 2011-08-21 Po Ju Chou A method for manufacturing a flexible pcb and the structure of the flexible pcb
CN102369600B (zh) * 2009-04-02 2014-09-10 株式会社村田制作所 电路基板
CN103222347A (zh) * 2011-01-13 2013-07-24 松下电器产业株式会社 电路构件的安装结构及电路构件的安装方法
US20130194076A1 (en) * 2012-01-30 2013-08-01 Yu-Min Ho Process Monitoring System and Related Method
US10014189B2 (en) * 2015-06-02 2018-07-03 Ngk Spark Plug Co., Ltd. Ceramic package with brazing material near seal member
US10163777B2 (en) * 2017-03-31 2018-12-25 Intel Corporation Interconnects for semiconductor packages
WO2019198199A1 (ja) * 2018-04-12 2019-10-17 三菱電機株式会社 半導体装置
TWI659441B (zh) * 2018-12-28 2019-05-11 國家中山科學研究院 用於毫米波頻段之多層交錯式電容陣列

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268012A (ja) * 1993-03-11 1994-09-22 Nec Corp 半導体集積回路装置
JP2002083891A (ja) * 2000-09-08 2002-03-22 Tohoku Ricoh Co Ltd 半導体集積回路
JP2004119709A (ja) * 2002-09-26 2004-04-15 Nec Corp 半導体集積回路
JP2005236090A (ja) * 2004-02-20 2005-09-02 Nec Tokin Corp 固体電解コンデンサ及び伝送線路素子とそれらの製造方法とそれらを用いた複合電子部品

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3641398A (en) * 1970-09-23 1972-02-08 Rca Corp High-frequency semiconductor device
JPS58190046A (ja) * 1982-04-30 1983-11-05 Fujitsu Ltd 半導体装置
FR2538617B1 (fr) * 1982-12-28 1986-02-28 Thomson Csf Boitier d'encapsulation pour semiconducteur de puissance, a isolement entree-sortie ameliore
JPH0810744B2 (ja) 1989-08-28 1996-01-31 三菱電機株式会社 半導体装置
US5237202A (en) * 1989-10-16 1993-08-17 Shinko Electric Industries Co., Ltd Lead frame and semiconductor device using same
US5031069A (en) * 1989-12-28 1991-07-09 Sundstrand Corporation Integration of ceramic capacitor
JP2504287B2 (ja) 1990-05-18 1996-06-05 日本電気株式会社 多層配線基板
FR2675632B1 (fr) * 1991-04-18 1997-04-30 Texas Instruments France Dispositif de conditionnement de circuits integres
EP0645810A4 (en) * 1993-04-06 1997-04-16 Tokuyama Corp SEMICONDUCTOR CHIP PACKAGE.
JPH06334105A (ja) * 1993-05-24 1994-12-02 Shinko Electric Ind Co Ltd 多層リードフレーム
US5736783A (en) * 1993-10-08 1998-04-07 Stratedge Corporation. High frequency microelectronics package
US6172412B1 (en) * 1993-10-08 2001-01-09 Stratedge Corporation High frequency microelectronics package
JPH0846073A (ja) * 1994-07-28 1996-02-16 Mitsubishi Electric Corp 半導体装置
KR19980024134A (ko) * 1996-09-18 1998-07-06 모기 쥰이찌 반도체 패키지
US5831331A (en) * 1996-11-22 1998-11-03 Philips Electronics North America Corporation Self-shielding inductor for multi-layer semiconductor integrated circuits
KR100218368B1 (ko) * 1997-04-18 1999-09-01 구본준 리드프레임과 그를 이용한 반도체 패키지 및 그의 제조방법
US7144486B1 (en) * 1997-04-30 2006-12-05 Board Of Trustees Of The University Of Arkansas Multilayer microcavity devices and methods
JPH1187880A (ja) 1997-09-16 1999-03-30 Oki Electric Ind Co Ltd プリント配線板
US5956226A (en) * 1997-10-01 1999-09-21 Motorola, Inc. Electrochemical capacitor used for thermal management
JP3500335B2 (ja) * 1999-09-17 2004-02-23 株式会社東芝 高周波回路装置
JP2001156196A (ja) * 1999-09-17 2001-06-08 Toshiba Corp 高周波パッケージおよびその製造方法
JP2001196488A (ja) * 1999-10-26 2001-07-19 Nec Corp 電子部品装置及びその製造方法
US6489679B2 (en) * 1999-12-06 2002-12-03 Sumitomo Metal (Smi) Electronics Devices Inc. High-frequency package
JP2001332825A (ja) 2000-03-14 2001-11-30 Fuji Xerox Co Ltd 回路基板装置及び設計支援装置
JP3925032B2 (ja) 2000-03-14 2007-06-06 富士ゼロックス株式会社 プリント配線基板
JP2001274558A (ja) 2000-03-23 2001-10-05 Hitachi Ltd プリント配線基板
SG96612A1 (en) * 2000-04-04 2003-06-16 Nec Tokin Corp Electronic component of a high frequency current suppression type and bonding wire for the same
US6642808B2 (en) * 2000-05-30 2003-11-04 Kyocera Corporation High frequency package, wiring board, and high frequency module having a cyclically varying transmission characteristic
US7456077B2 (en) * 2000-11-03 2008-11-25 Cardiac Pacemakers, Inc. Method for interconnecting anodes and cathodes in a flat capacitor
DE10064447C2 (de) * 2000-12-22 2003-01-02 Epcos Ag Elektrisches Vielschichtbauelement und Entstörschaltung mit dem Bauelement
DE10105696A1 (de) * 2001-02-08 2002-08-14 Rohde & Schwarz Symmetrierübertrager
US6455925B1 (en) * 2001-03-27 2002-09-24 Ericsson Inc. Power transistor package with integrated flange for surface mount heat removal
US6619763B2 (en) * 2001-05-25 2003-09-16 Presidio Components, Inc. Feed-through filter capacitor with non-overlapping electrodes
JP3847578B2 (ja) 2001-06-04 2006-11-22 三菱電機株式会社 プリント配線板
FR2826780A1 (fr) * 2001-06-28 2003-01-03 St Microelectronics Sa Dispositif semi-conducteur a structure hyperfrequence
JP2003101311A (ja) 2001-09-20 2003-04-04 Nec Corp シールドストリップ線路型素子
JP3674693B2 (ja) 2001-10-09 2005-07-20 日本電気株式会社 シールドストリップ線路型素子及びその製造方法
TWI279080B (en) * 2001-09-20 2007-04-11 Nec Corp Shielded strip line device and method of manufacture thereof
JP4084605B2 (ja) * 2002-05-31 2008-04-30 Ｎｅｃトーキン株式会社 伝送線路型ノイズフィルタ
TW200409153A (en) * 2002-09-04 2004-06-01 Nec Corp Strip line element, printed circuit board carrying member, circuit board, semiconductor package and method for forming same
CN1282245C (zh) * 2002-12-13 2006-10-25 矽统科技股份有限公司 具有部分嵌埋型解耦合电容的半导体芯片
US20040124486A1 (en) * 2002-12-26 2004-07-01 Katsumi Yamamoto Image sensor adapted for reduced component chip scale packaging
FR2852738A1 (fr) * 2003-03-19 2004-09-24 Radiall Sa Dispositif hyperfrequence destine a la dissipation ou a l'attenuation de puissance.
JP4519418B2 (ja) 2003-04-28 2010-08-04 ルネサスエレクトロニクス株式会社 半導体装置
US6833619B1 (en) * 2003-04-28 2004-12-21 Amkor Technology, Inc. Thin profile semiconductor package which reduces warpage and damage during laser markings
JP2005011938A (ja) 2003-06-18 2005-01-13 Murata Mfg Co Ltd 高周波用電子回路及び高周波用電子回路へのチップ型三端子コンデンサの実装構造
JP4432470B2 (ja) 2003-11-25 2010-03-17 株式会社デンソー 半導体装置
JP2007521638A (ja) * 2003-12-23 2007-08-02 テレフオンアクチーボラゲット エル エム エリクソン（パブル） キャパシタ
US7115988B1 (en) * 2004-01-21 2006-10-03 Altera Corporation Bypass capacitor embedded flip chip package lid and stiffener
JP4126021B2 (ja) * 2004-02-05 2008-07-30 ローム株式会社 固体電解コンデンサ
KR100610462B1 (ko) * 2004-02-20 2006-08-08 엔이씨 도낀 가부시끼가이샤 고체 전해 커패시터, 전송선로장치, 그 제조방법 및 그것을이용하는 복합 전자부품
US20050280060A1 (en) * 2004-06-22 2005-12-22 Werner Juengling Concentric or nested container capacitor structure for integrated cicuits
US7339263B2 (en) * 2004-06-28 2008-03-04 Intel Corporation Integrated circuit packages, systems, and methods
JP2005033813A (ja) 2004-07-26 2005-02-03 Nec Corp シールドスリップ線路型素子
US20060164813A1 (en) * 2004-11-30 2006-07-27 Kabushiki Kaisha Toshiba Semiconductor package and semiconductor module
KR100649579B1 (ko) * 2004-12-07 2006-11-28 삼성전기주식회사 적층형 캐패시터 및 적층형 캐패시터 어레이
JP4736451B2 (ja) 2005-02-03 2011-07-27 パナソニック株式会社 多層配線基板とその製造方法、および多層配線基板を用いた半導体パッケージと電子機器
JP4575261B2 (ja) * 2005-09-14 2010-11-04 株式会社東芝 高周波用パッケージ
US8411450B2 (en) * 2006-01-25 2013-04-02 Nec Corporation Electronic device package, module, and electronic device
JP5333776B2 (ja) * 2007-03-08 2013-11-06 日本電気株式会社 容量素子、プリント配線基板、半導体パッケージ及び半導体回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268012A (ja) * 1993-03-11 1994-09-22 Nec Corp 半導体集積回路装置
JP2002083891A (ja) * 2000-09-08 2002-03-22 Tohoku Ricoh Co Ltd 半導体集積回路
JP2004119709A (ja) * 2002-09-26 2004-04-15 Nec Corp 半導体集積回路
JP2005236090A (ja) * 2004-02-20 2005-09-02 Nec Tokin Corp 固体電解コンデンサ及び伝送線路素子とそれらの製造方法とそれらを用いた複合電子部品

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CN101627450B (zh) 2013-10-30
JPWO2008108350A1 (ja) 2010-06-17

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