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WO2008099863A1 - Semiconductor, semiconductor device, and complementary transistor circuit device - Google Patents

Semiconductor, semiconductor device, and complementary transistor circuit device Download PDF

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Publication number
WO2008099863A1
WO2008099863A1 PCT/JP2008/052391 JP2008052391W WO2008099863A1 WO 2008099863 A1 WO2008099863 A1 WO 2008099863A1 JP 2008052391 W JP2008052391 W JP 2008052391W WO 2008099863 A1 WO2008099863 A1 WO 2008099863A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
electrode
transistor circuit
complementary transistor
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/052391
Other languages
French (fr)
Japanese (ja)
Inventor
Koki Yano
Hajime Nakanotani
Chihaya Adachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyushu University NUC
Idemitsu Kosan Co Ltd
Original Assignee
Kyushu University NUC
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/806,995 external-priority patent/US8129714B2/en
Application filed by Kyushu University NUC, Idemitsu Kosan Co Ltd filed Critical Kyushu University NUC
Priority to JP2008558109A priority Critical patent/JP5551366B2/en
Publication of WO2008099863A1 publication Critical patent/WO2008099863A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)

Abstract

Disclosed is a semiconductor device comprising a semiconductor (1), a first electrode (2), an insulating layer (3) formed between the semiconductor (1) and the first electrode (2), a second electrode (4) which is in contact with the semiconductor (1) while being apart from the first electrode (2), and a third electrode (5) which is in contact with the semiconductor (1) while being apart from the first electrode (2) and the second electrode (4). The semiconductor (1) comprises an organic semiconductor layer (10) and an oxide semiconductor layer (11).
PCT/JP2008/052391 2007-02-16 2008-02-14 Semiconductor, semiconductor device, and complementary transistor circuit device Ceased WO2008099863A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008558109A JP5551366B2 (en) 2007-02-16 2008-02-14 Semiconductor, semiconductor device and complementary transistor circuit device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007036580 2007-02-16
JP2007-036580 2007-02-16
US11/806,995 2007-06-05
US11/806,995 US8129714B2 (en) 2007-02-16 2007-06-05 Semiconductor, semiconductor device, complementary transistor circuit device

Publications (1)

Publication Number Publication Date
WO2008099863A1 true WO2008099863A1 (en) 2008-08-21

Family

ID=39690090

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052391 Ceased WO2008099863A1 (en) 2007-02-16 2008-02-14 Semiconductor, semiconductor device, and complementary transistor circuit device

Country Status (1)

Country Link
WO (1) WO2008099863A1 (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009028453A1 (en) * 2007-08-31 2009-03-05 Konica Minolta Holdings, Inc. Thin film transistor
JP2009218562A (en) * 2008-03-07 2009-09-24 Samsung Electronics Co Ltd Transistor and method of manufacturing the same
JP2010114184A (en) * 2008-11-05 2010-05-20 Univ Of Yamanashi Ambipolar-type organic field-effect transistor
WO2010119952A1 (en) * 2009-04-17 2010-10-21 株式会社ブリヂストン Thin film transistor and method for manufacturing thin film transistor
WO2011062048A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP2011146694A (en) * 2009-12-18 2011-07-28 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
JP2011192929A (en) * 2010-03-16 2011-09-29 Ricoh Co Ltd Semiconductor position detector and optical sensor
JP2013115111A (en) * 2011-11-25 2013-06-10 Hitachi Ltd Oxide semiconductor device and manufacturing method of the same
JP2013128097A (en) * 2011-12-16 2013-06-27 Industrial Technology Research Institute Bipolar transistor device structure and method for manufacturing the same
JP2013191850A (en) * 2007-03-20 2013-09-26 Idemitsu Kosan Co Ltd Sputtering target, oxide semiconductor film, and semiconductor device
KR101372734B1 (en) 2012-02-15 2014-03-13 연세대학교 산학협력단 Thin film transistor using liquid-phase process and method for fabricating the same
JP2015062248A (en) * 2009-11-28 2015-04-02 株式会社半導体エネルギー研究所 Semiconductor device
JP2015164203A (en) * 2009-10-05 2015-09-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP2017195417A (en) * 2009-12-04 2017-10-26 株式会社半導体エネルギー研究所 Electronic apparatus
KR101820703B1 (en) 2016-07-29 2018-03-08 엘지디스플레이 주식회사 Thin film transistor, method for manufacturing the same, and display device including the same
JP2018061047A (en) * 2010-09-13 2018-04-12 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method
JP2019220716A (en) * 2009-10-30 2019-12-26 株式会社半導体エネルギー研究所 Semiconductor device
JP2020017743A (en) * 2010-02-05 2020-01-30 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
CN111416040A (en) * 2020-03-11 2020-07-14 深圳大学 A kind of bipolar thin film transistor and preparation method thereof
JP2020188277A (en) * 2009-10-16 2020-11-19 株式会社半導体エネルギー研究所 Semiconductor device
JP2021044559A (en) * 2010-03-05 2021-03-18 株式会社半導体エネルギー研究所 Manufacturing method for oxide semiconductor film

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188165A (en) * 1982-04-28 1983-11-02 Nec Corp Semiconductor device
JPH08228034A (en) * 1994-12-09 1996-09-03 At & T Corp Organic thin film transistor device
JPH09199732A (en) * 1996-01-16 1997-07-31 Lucent Technol Inc Products consisting of transistors
JP2006502597A (en) * 2002-05-21 2006-01-19 ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ Transistor structure and manufacturing method thereof
JP2006165532A (en) * 2004-11-10 2006-06-22 Canon Inc Semiconductor device using amorphous oxide

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188165A (en) * 1982-04-28 1983-11-02 Nec Corp Semiconductor device
JPH08228034A (en) * 1994-12-09 1996-09-03 At & T Corp Organic thin film transistor device
JPH09199732A (en) * 1996-01-16 1997-07-31 Lucent Technol Inc Products consisting of transistors
JP2006502597A (en) * 2002-05-21 2006-01-19 ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ Transistor structure and manufacturing method thereof
JP2006165532A (en) * 2004-11-10 2006-06-22 Canon Inc Semiconductor device using amorphous oxide

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013191850A (en) * 2007-03-20 2013-09-26 Idemitsu Kosan Co Ltd Sputtering target, oxide semiconductor film, and semiconductor device
WO2009028453A1 (en) * 2007-08-31 2009-03-05 Konica Minolta Holdings, Inc. Thin film transistor
JP2009218562A (en) * 2008-03-07 2009-09-24 Samsung Electronics Co Ltd Transistor and method of manufacturing the same
JP2010114184A (en) * 2008-11-05 2010-05-20 Univ Of Yamanashi Ambipolar-type organic field-effect transistor
WO2010119952A1 (en) * 2009-04-17 2010-10-21 株式会社ブリヂストン Thin film transistor and method for manufacturing thin film transistor
CN102460712A (en) * 2009-04-17 2012-05-16 株式会社普利司通 Thin film transistor and method for manufacturing thin film transistor
JP2015164203A (en) * 2009-10-05 2015-09-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9754784B2 (en) 2009-10-05 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
US9627198B2 (en) 2009-10-05 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film semiconductor device
JP7072613B2 (en) 2009-10-16 2022-05-20 株式会社半導体エネルギー研究所 Semiconductor device
JP2020188277A (en) * 2009-10-16 2020-11-19 株式会社半導体エネルギー研究所 Semiconductor device
JP2019220716A (en) * 2009-10-30 2019-12-26 株式会社半導体エネルギー研究所 Semiconductor device
WO2011062048A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8963149B2 (en) 2009-11-20 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8766250B2 (en) 2009-11-20 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US9306075B2 (en) 2009-11-20 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US9368640B2 (en) 2009-11-28 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with stacked oxide semiconductor films
JP2015062248A (en) * 2009-11-28 2015-04-02 株式会社半導体エネルギー研究所 Semiconductor device
JP2017195417A (en) * 2009-12-04 2017-10-26 株式会社半導体エネルギー研究所 Electronic apparatus
US9378980B2 (en) 2009-12-18 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9728651B2 (en) 2009-12-18 2017-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2011146694A (en) * 2009-12-18 2011-07-28 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
US9240488B2 (en) 2009-12-18 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10453964B2 (en) 2009-12-18 2019-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2020017743A (en) * 2010-02-05 2020-01-30 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
JP7101739B2 (en) 2010-03-05 2022-07-15 株式会社半導体エネルギー研究所 Method for manufacturing oxide semiconductor film and method for manufacturing transistor
JP2021044559A (en) * 2010-03-05 2021-03-18 株式会社半導体エネルギー研究所 Manufacturing method for oxide semiconductor film
JP2011192929A (en) * 2010-03-16 2011-09-29 Ricoh Co Ltd Semiconductor position detector and optical sensor
JP2018061047A (en) * 2010-09-13 2018-04-12 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method
US10586869B2 (en) 2010-09-13 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013115111A (en) * 2011-11-25 2013-06-10 Hitachi Ltd Oxide semiconductor device and manufacturing method of the same
JP2013128097A (en) * 2011-12-16 2013-06-27 Industrial Technology Research Institute Bipolar transistor device structure and method for manufacturing the same
KR101372734B1 (en) 2012-02-15 2014-03-13 연세대학교 산학협력단 Thin film transistor using liquid-phase process and method for fabricating the same
KR101820703B1 (en) 2016-07-29 2018-03-08 엘지디스플레이 주식회사 Thin film transistor, method for manufacturing the same, and display device including the same
CN111416040A (en) * 2020-03-11 2020-07-14 深圳大学 A kind of bipolar thin film transistor and preparation method thereof
CN111416040B (en) * 2020-03-11 2023-11-14 深圳大学 Bipolar thin film transistor and preparation method thereof

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