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WO2008037506A8 - Selbstorganisierte nadelartige nano-strukturen in ihren anwendungen - Google Patents

Selbstorganisierte nadelartige nano-strukturen in ihren anwendungen Download PDF

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Publication number
WO2008037506A8
WO2008037506A8 PCT/EP2007/053487 EP2007053487W WO2008037506A8 WO 2008037506 A8 WO2008037506 A8 WO 2008037506A8 EP 2007053487 W EP2007053487 W EP 2007053487W WO 2008037506 A8 WO2008037506 A8 WO 2008037506A8
Authority
WO
WIPO (PCT)
Prior art keywords
self
organized
needle
nanostructure
type nanostructures
Prior art date
Application number
PCT/EP2007/053487
Other languages
English (en)
French (fr)
Other versions
WO2008037506A1 (de
Inventor
Daniel Gaebler
Konrad Bach
Original Assignee
X Fab Semiconductor Foundries
Daniel Gaebler
Konrad Bach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Fab Semiconductor Foundries, Daniel Gaebler, Konrad Bach filed Critical X Fab Semiconductor Foundries
Priority to DE112007002297T priority Critical patent/DE112007002297A5/de
Priority to US12/443,261 priority patent/US8258557B2/en
Publication of WO2008037506A1 publication Critical patent/WO2008037506A1/de
Publication of WO2008037506A8 publication Critical patent/WO2008037506A8/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
    • G02B2207/101—Nanooptics
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

Die Erfindung betrifft Verfahren für die Herstellung und Elemente (Bauteile) mit einer Nanostruktur (2;4,4a) zur Verbesserung des optischen Verhaltens von Bauelementen und Geräten und/oder zur Verbesserung des Verhaltens von Sensoren durch Vergrößern des aktiven Oberflächenbereichs. Die Nanostruktur (2) wird mittels RIE-Ätzung selbst-maskierend hergestellt und kann in ihrer Materialzusammensetzung modifiziert werden und mit geeigneten Deckschichten versehen werden.
PCT/EP2007/053487 2006-09-28 2007-04-10 Selbstorganisierte nadelartige nano-strukturen in ihren anwendungen WO2008037506A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112007002297T DE112007002297A5 (de) 2006-09-28 2007-04-10 Selbstorganisierte Nadelartige Nano-Strukturen in ihren Anwendungen
US12/443,261 US8258557B2 (en) 2006-09-28 2007-04-10 Uses of self-organized needle-type nanostructures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006046131.2 2006-09-28
DE102006046131.2A DE102006046131B4 (de) 2006-09-28 2006-09-28 Verfahren zur Herstellung einer optischen Schnittstelle für integrierte Optikanwendungen

Publications (2)

Publication Number Publication Date
WO2008037506A1 WO2008037506A1 (de) 2008-04-03
WO2008037506A8 true WO2008037506A8 (de) 2009-05-14

Family

ID=38157959

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/053487 WO2008037506A1 (de) 2006-09-28 2007-04-10 Selbstorganisierte nadelartige nano-strukturen in ihren anwendungen

Country Status (3)

Country Link
US (1) US8258557B2 (de)
DE (2) DE102006046131B4 (de)
WO (1) WO2008037506A1 (de)

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KR101615787B1 (ko) * 2008-12-30 2016-04-26 쓰리엠 이노베이티브 프로퍼티즈 컴파니 나노구조화 표면의 제조 방법
US20100259823A1 (en) * 2009-04-09 2010-10-14 General Electric Company Nanostructured anti-reflection coatings and associated methods and devices
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DE102011003454A1 (de) * 2011-02-01 2012-08-02 Siemens Aktiengesellschaft Strahlungsdirektkonverter, Strahlungsdetektor, medizintechnisches Gerät und Verfahren zum Erzeugen eines Strahlungsdirektkonverters
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US10677542B2 (en) * 2017-10-23 2020-06-09 Trustees Of Boston University Enhanced thermal transport across interfaces
KR102535127B1 (ko) 2018-03-06 2023-05-22 에이에스엠엘 홀딩 엔.브이. 반사방지 광학 기판 및 제조 방법
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Also Published As

Publication number Publication date
DE102006046131B4 (de) 2020-06-25
US20100117108A1 (en) 2010-05-13
DE102006046131A1 (de) 2008-04-10
DE112007002297A5 (de) 2009-10-15
WO2008037506A1 (de) 2008-04-03
US8258557B2 (en) 2012-09-04

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