WO2007145165A1

WO2007145165A1 - Stage apparatus, exposure apparatus and device manufacturing method

Info

Publication number: WO2007145165A1
Application number: PCT/JP2007/061721
Authority: WO
Inventors: Kenichi Ashida; Hiroaki Takaiwa
Original assignee: Nikon Corporation
Priority date: 2006-06-12
Filing date: 2007-06-11
Publication date: 2007-12-21
Also published as: TW200807177A; JPWO2007145165A1; JP5182089B2; TWI439814B

Abstract

A stage apparatus (WST) is provided with a base section (63); a first moving member (62) which can relatively move to the base section (63); a second moving member (61) which holds a subject (W) and can relatively move to the first moving member (62); and measuring apparatuses (100, 200) for measuring characteristics of an energy beam (EL) to be applied on the subject (W). At least a part of the measuring apparatuses (100, 120) is arranged on the first moving member (62).

Description

Specification

Stage apparatus, exposure apparatus, and device manufacturing method

Technical field

The present invention relates to a stage apparatus and an exposure apparatus using this stage apparatus.

The present invention relates to an exposure apparatus used in the lithographic process when manufacturing electronic devices such as semiconductor elements (integrated circuits) and liquid crystal display elements.

This application claims priority based on Japanese Patent Application No. 2006-162252 filed on June 12, 2006, the contents of which are incorporated herein by reference.

Background art

Conventionally, a projection exposure apparatus is used in a lithographic process for manufacturing electronic devices such as semiconductor elements (integrated circuits, etc.) and liquid crystal display elements. A step-and-repeat reduction projection exposure apparatus (so-called “repeat”) that transfers a mask (or reticle) pattern image to each of a plurality of shot areas on a photosensitive substrate such as a wafer or a glass plate coated with a photosensitive agent. It is mainly used for such things as loose stenos) and step-and-scan type projection exposure equipment (so-called scanning stepper (also called scanner)).

In a projection exposure apparatus, it is necessary to move a table on a stage very quickly for high productivity, and the size of a linear motor for driving the table has been increased. However, the larger the linear motor, the higher the power consumption and manufacturing cost.

[0004] On the other hand, with the miniaturization of patterns due to high integration of integrated circuits, higher resolution (resolution) is required year by year. The numerical aperture (NA) of projection optical systems has been gradually increasing. This improves the resolving power of the projection exposure apparatus, but also reduces the depth of focus and makes it difficult to adjust the height of the table (in the depth of focus direction). It is also necessary to adjust the position of the table in the moving direction with high accuracy while powering the table very quickly.

[0005] One solution to these problems is to reduce the weight of a table that is a moving object. If the weight of the table is reduced, it becomes easier to move the table at high speed and with high accuracy. For this reason, lightweight and highly rigid ceramic tables are used. But the table Photosensitive substrates such as wafers or glass plates are becoming larger, making it difficult to reduce the weight of the table.

Patent Document 1: Japanese Patent Laid-Open No. 2004-128308

Disclosure of the invention

Problems to be solved by the invention

When performing transfer exposure on a photosensitive substrate such as a wafer or a glass plate via a projection optical system, it is necessary to measure the amount of energy beam (exposure light), unevenness in the amount of light of the beam, and the like. For this reason, various sensors and accompanying parts are attached to the upper surface of the table. In addition, a sensor for confirming the positional relationship between the projection optical system and the table and its accompanying parts are also attached. The presence of these sensors also prevented the light weight and miniaturization of the table.

An object of the present invention is to propose a stage apparatus, an exposure apparatus, and a device manufacturing method that can lighten a table that moves while holding a substrate.

Means for solving the problem

[0008] In the stage apparatus, the exposure apparatus, and the device manufacturing method according to the present invention, the following configuration corresponding to each drawing shown in the embodiment is adopted. However, the reference numerals in parentheses attached to each element are merely examples of the element and do not limit each element.

According to the first aspect of the present invention, the base portion (63), the first moving member (62) movable relative to the base portion, the object (W) are held, and the first moving member And a second moving member (61) movable relative to the measuring device (100, 120) for measuring the characteristics of the energy beam (EL) irradiated to the object, at least a part of which is installed on the first moving member. A stage device is provided.

According to the first aspect, the second moving member can be reduced in weight and size, so that the second moving member can be moved at high speed and with high accuracy.

[0010] According to the second aspect of the present invention, there is provided an exposure apparatus (EX) for forming a predetermined image on the substrate (W) held on the substrate stage (WST), the stage according to the first aspect. An exposure apparatus using a substrate stage is provided. According to the second aspect, the productivity (throughput) of the exposure apparatus can be improved. [0011] According to the third aspect of the present invention, there is provided a method for manufacturing a device including a lithographic process, wherein the manufacturing method using the exposure apparatus (EX) according to the second aspect is provided in accordance with the lithographic process. Provided. According to the present invention, a high-performance device can be manufactured with high efficiency. The invention's effect

[0012] According to each aspect of the present invention, since the measuring device is installed on the first moving member, the second moving member can be reduced in weight or size, and the second moving member can be moved with high accuracy and high speed. Is possible.

Therefore, the high throughput of the exposure apparatus can be achieved, so that a high-performance and inexpensive device can be manufactured.

Brief Description of Drawings

FIG. 1 is a view showing the schematic arrangement of an exposure apparatus according to an embodiment.

FIG. 2 is a perspective view showing a configuration of a wafer stage according to the embodiment.

FIG. 3 is an enlarged perspective view of a wafer stage according to the embodiment.

FIG. 4 is a cross-sectional view showing a schematic configuration of a wafer stage according to the embodiment.

FIG. 5 is a flowchart showing an example of a manufacturing process of a microdevice according to an embodiment.

Explanation of symbols

[0014] 61 ··· Fine movement table (second moving member) 62 ··· Rough movement table (first moving member) 63 · · · Wafer surface plate (base) 67 · · Surface adjustment mechanism (position adjustment device 90 · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · ··· Incident light guiding part (light receiving part) 124 ··· Intermediate light guiding part (light guiding part) 126 ... Output light guiding part (light transmitting part) 128 ... Light receiving sensor (sensor part) EX ... Exposure device EL ... Exposure light ( Energy beam) R ... Retal (mask) PA ... Pattern WST ... Wafer stage (stage device, substrate stage) W ... Wafer (object, photosensitive substrate, substrate)

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of a stage apparatus, an exposure apparatus, and a device manufacturing method according to the present invention will be described. Will be described with reference to the drawings.

FIG. 1 is a view showing the schematic arrangement of an exposure apparatus EX according to the embodiment of the present invention.

The exposure apparatus EX transfers the pattern PA formed on the reticle R to each shot area on the wafer W via the projection optical system PL while synchronously moving the reticle R and the wafer W in the one-dimensional direction. This is a step-and-scan type scanning exposure apparatus, that is, a so-called scanning stepper.

The exposure apparatus EX projects onto the wafer W the illumination optical system IL that illuminates the reticle R with the exposure light EL, the reticle stage RST that can move while holding the reticle R, and the exposure light EL that is emitted from the reticle R. Projection optical system PL, wafer stage WST that can move while holding wafer W via wafer holder WH, and control device CONT that controls exposure apparatus EX in an integrated manner.

[0018] In the following description, the direction parallel to the optical axis AX of the projection optical system PL is the Z-axis direction, and the synchronous movement direction (scanning direction) of the reticle R and the wafer W in a plane perpendicular to the Z-axis direction. The direction perpendicular to the X-axis direction, Z-axis direction, and Y-axis direction (non-scanning direction) is the Y-axis direction. The rotation (inclination) directions around the X, Y, and Z axes are 0 X, 0 ¥, and 0 mm, respectively.

The illumination optical system IL illuminates the reticle R supported by the reticle stage RST with the exposure light EL. The illumination optical system IL consists of an exposure light source that emits exposure light EL, an optical integrator that equalizes the illuminance of the exposure light EL that also emits the exposure light source power, a condenser lens that collects the exposure light EL from the optical integrator, and a relay lens. System, variable field stop (not shown) that sets the illumination area on reticle R by exposure light EL in a slit shape. The predetermined illumination area on the reticle R is illuminated with the exposure light EL having a uniform illuminance distribution by the illumination optical system IL.

[0020] Illumination optical system IL force The emitted exposure light EL is, for example, a mercury lamp force emitted in the ultraviolet region (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248nm). Ultraviolet light (DUV light), ArF excimer laser light (wavelength 193nm) and F laser light (wavelength 1)

2

Vacuum ultraviolet light (VUV light) such as 57 nm) is used.

[0021] Reticle stage RST is movable while holding reticle R, and is a reticle holder. Hold reticle R by vacuum suction with RH.

Reticle stage RST can be moved two-dimensionally in a plane perpendicular to optical axis AX of projection optical system PL, that is, in the XY plane, and can be slightly rotated in the θZ direction.

Reticle stage RST is driven by a reticle stage drive unit RSTD such as a linear motor. Reticle stage drive unit RSTD is controlled by control device CONT. The detailed configuration of reticle holder RH will be described later.

A movable mirror 51 is provided on the reticle stage RST. A laser interferometer 52 is provided at a position facing the moving mirror 51. The position of reticle R on reticle stage RST in the two-dimensional direction (XY direction) and the rotation angle in θ Z direction (including rotation angles in 0 X and 0 Y directions in some cases) are measured in real time by laser interferometer 52. Is done. The measurement result of the laser interferometer 52 is output to the control device CONT. The control device CONT controls the position of the reticle R supported by the reticle stage RST by driving the reticle stage drive unit RSTD based on the measurement result of the laser interferometer 52.

Projection optical system PL projects and exposes the pattern of reticle R onto wafer W at a predetermined projection magnification β. Projection optical system PL is composed of a plurality of optical elements including an optical element provided at the front end portion on the wafer W side. These optical elements are supported by a lens barrel PK. The projection optical system PL is a reduction system in which the projection magnification j8 is 1Z4, 1/5, or 1Z8, for example. The projection optical system PL may be any one of a reduction system, a unity magnification system, and an enlargement system. The optical element at the tip of the projection optical system PL is provided so as to be detachable (replaceable) with respect to the barrel PK.

Wafer stage WST moves while supporting wafer W, and includes fine movement table 61, coarse movement table 62, wafer surface plate 63, and the like. Fine movement table 61 holds wafer W via wafer holder WH, and relative to coarse movement table 62 (or wafer surface plate 63) in the X-axis direction, Y-axis direction, Z-axis direction, 0 X-direction, 0 Small drive is possible in 6 degrees of freedom in the Y and 0Z directions. The coarse movement table 62 is movable in three degrees of freedom in the Y axis direction, the X axis direction, and the θ Z direction while supporting the fine movement table 61 (substantially in the Z axis direction). Wafer surface plate 63 supports coarse movement table 62 so as to be movable in the XY plane.

[0025] Wafer stage WST is a wafer stage drive unit such as a linear motor WSTD (X-axis linear Motor 70, Y-axis linear motor 80, etc., see Fig. 2). The wafer stage drive unit WSTD is controlled by the controller CONT. By driving the coarse motion table 62, the position in the XY direction of the wafer W (position in a direction substantially parallel to the image plane of the projection optical system PL) is controlled. Furthermore, by driving the fine movement table 61, the X-axis direction, Y-axis direction, Z-axis direction (focus position), 0 X direction, 0 Y direction of the wafer W held by the wafer holder WH on the fine movement table 61 And the position in the 0Z direction is controlled with high accuracy.

A movable mirror 53 is provided on wafer stage WST (fine movement table 61). A laser interferometer 54 is provided at a position facing the moving mirror 53. The position and rotation angle of wafer W on wafer stage W ST in the two-dimensional direction are measured in real time by laser interferometer 54, and the measurement result is output to controller CONT. The controller CONT is supported by the wafer stage WST by driving the wafer stage WST via the wafer stage drive unit WSTD based on the measurement result of the laser interferometer 54. Position in the Y axis direction and 0 Z direction.

In addition, the exposure apparatus EX includes a focus detection system 56 that detects the position (focus position) of the surface of the wafer W with respect to the image plane of the projection optical system PL. For example, as disclosed in US Pat. No. 6,608,681, the focus detection system detects substrate surface position information by measuring position information in the Z-axis direction of the substrate at each of the measurement points. To do. In the present embodiment, the focus detection system 56 includes a light projecting unit 56A that projects detection light obliquely with respect to the surface of the wafer W, and a light receiving unit 56B that receives detection light (reflected light) reflected from the surface of the wafer W. It is equipped with.

[0028] The light reception result of the light receiving unit 56B is output to the control device CONT. The control device CONT drives the wafer stage WST (fine adjustment table 61) via the wafer stage drive unit WSTD based on the detection result of the focus detection system 56, thereby determining the position of the surface of the wafer W. Depth of focus of the projection optical system PL Fit in. That is, fine movement table 61 controls the focus position and tilt angle of wafer W to adjust the surface of wafer W to the image plane of projection optical system PL by the autofocus method and the auto leveling method.

Next, a detailed configuration of wafer stage WST will be described. FIG. 2 is a perspective view showing a configuration of wafer stage WST.

[0030] Wafer stage WST is a wafer surface plate 63 provided on frame caster FC, and wafer stage WST which is arranged above wafer surface plate 63 and moves along upper surface 63A of wafer surface plate 63. And a laser interferometer 54 that detects the position of these wafer stages WST, an X-axis linear motor 70 that drives the wafer stage WST, a Y-axis linear motor 80 (see the wafer stage drive unit WSTD in FIG. 1), etc. /!

[0031] The frame caster FC is a member formed in a substantially flat plate shape, and is placed on the floor via a vibration removal unit (not shown). On the upper surface of the frame caster FC, a wafer surface plate 63 is levitated and supported by a static gas bearing (not shown) (for example, an air bearing) via a predetermined clearance. Wafer surface plate 63 is levitated because the reaction force generated by the movement of wafer stage WST causes wafer surface plate 63 to move in the opposite direction as a counter mass, and this reaction force is canceled by the law of conservation of momentum. Because.

[0032] Upper surface 63A of wafer surface plate 63 is finished with a very high degree of flatness, and serves as a guide surface when wafer stage WST moves along the XY plane.

Wafer stage WST includes coarse movement table 62 arranged on wafer surface plate 63 and fine movement table 61 mounted on coarse movement table 62 via a 6-degree-of-freedom fine movement mechanism (not shown). I have. The 6-degree-of-freedom fine movement mechanism actually includes an actuator 90 that supports the fine movement table 61 at a plurality of locations on the coarse movement table 62 (see FIG. 4). For example, a voice coil motor or the like is preferably used as the actuator 90. By controlling the actuator 90 with the control device CONT, the fine movement table 61 is slightly moved in six degrees of freedom in the X axis direction, Y axis direction, Z axis direction, 0 X direction, 0 Y direction, and 0 Z direction. Let

The coarse motion table 62 is configured by a hollow member having a rectangular frame shape extending in the X-axis direction. A gas static pressure bearing (not shown) (for example, an air bearing) (not shown) is disposed on the lower surface of the coarse motion table 62, and the coarse motion table 62 is supported to float through a predetermined clearance.

Inside the coarse motion table 62, a magnet unit 72 having a permanent magnet group as a mover in the X-axis direction is provided. An X-axis stator 74 extending in the X-axis direction is inserted into the internal space of the magnet unit 72. This X-axis stator 74 is located along the X-axis direction. It is composed of an armature unit containing a plurality of armature coils arranged at regular intervals. In this case, a moving magnet type X-axis reduced motor 70 for driving the wafer stage WST in the X-axis direction is constituted by the magnet unit 72 and the X-axis stator 74 including the armature unit. As the X-axis linear motor 70, a moving coil type linear motor may be used instead of the moving magnet type linear motor.

[0036] Movable elements 82 are fixed to both ends in the longitudinal direction of the X-axis stator 74, respectively. The mover 82 is composed of, for example, an armature unit containing a plurality of armature coils arranged at predetermined intervals along the Y-axis direction. At both ends in the X direction of the wafer surface plate 63, Y axis driving stators 84 extending in the Y direction are disposed. The Y-axis stator 84 is configured as a magnetic pole unit having a plurality of permanent magnet group forces. Each of the above-described movers 82 is inserted into the Y-axis stator 84 inside. That is, a moving coil type Y-axis linear motor 80 for driving wafer stage WST in the Y-axis direction is constituted by a mover 82 made of an electric unit and a Y-axis stator 84 made of a magnetic pole unit. As the Y-axis linear motor 80, a moving magnet type linear motor may be used instead of the moving coil type linear motor.

[0037] With this configuration, wafer stage WST is driven in the X-axis direction by X-axis linear motor 70, and driven in the Y-axis direction integrally with X-axis linear motor 70 by a pair of Y-axis linear motors 80. Is done. In addition, by making a difference in the driving force of the two Y-axis linear motors 80, the X-axis stator 74 can move in the θZ direction. Is also driven in the θZ direction.

FIG. 3 is an enlarged perspective view of wafer stage WST, and FIG. 4 is a cross-sectional view showing a schematic configuration of wafer stage WST.

[0039] A wafer holder WH for holding a wafer W having a diameter of 300 mm is provided in the approximate center on the fine movement table 61! /. A reference mark member FM (Fiducial Mark) is provided in the vicinity of the wafer holder WH. The reference mark member FM is a light transmissive member, and for example, cross marks are formed on the upper surface thereof at predetermined intervals.

[0040] The coarse motion table 62 includes a first sensor 100 for measuring the characteristics (illuminance and illuminance unevenness) of the exposure light EL irradiated through the projection optical system PL, and a reticle R and a wafer W. Position A part of the second sensor 120 for measuring the exposure light EL is attached to measure the engagement.

[0041] The first sensors 100 are an exposure amount sensor 102 that measures the illuminance (light quantity) of the exposure light EL that has passed through the projection optical system PL, and a wavefront aberration sensor 104 that measures the wavefront aberration of the projection optical system PL. And an illuminance unevenness sensor 106 that measures unevenness (light amount distribution) of the exposure light EL via the projection optical system PL, each of which is provided on the coarse motion table 62 via the adjustment stage 65.

[0042] The first sensors 100 are not limited to a detector having a photodiode or a CCD. The first sensors 100 may include members necessary for various measurements such as a pinhole mirror or a diffraction grating disposed on the light receiving surface. Further, the first sensors 100 may be anything that measures the characteristics of the exposure light EL that is not limited to the exposure amount sensor 102, the wavefront aberration sensor 104, and the illuminance unevenness sensor 106. Further, the first sensors 100 may measure measurement light other than the exposure light EL.

[0043] The coarse motion table 62 has a plurality of extension portions 62B in a part thereof. The first sensors 100 are arranged on the upper part of the extension part 62B via the surface adjustment mechanism 66. As a result, the first sensors 100 (the exposure amount sensor 102, the wavefront aberration sensor 104, and the illuminance unevenness sensor 106) are positioned on the side of the fine movement table 61! /.

As the surface adjustment mechanism 66, for example, three piezoelectric actuator cam mechanisms and the like are preferably used. By controlling the surface adjustment mechanism 66 by the control device CONT, the detection surface (upper surface) of the first sensors 100 can be adjusted in the Z-axis direction, the 0x direction, and the 0y direction.

The surface adjustment mechanism 66 is used to make the detection surface of the first sensors 100 coincide with the image formation surface of the projection optical system PL. In other words, the exposure light EL is measured under the same conditions as during the wafer W exposure process.

As shown in FIGS. 3 and 4, the second sensor 120 includes an incident light guide 122 that receives the exposure light EL, an intermediate light guide 124, an output light guide 126 that emits the exposure light EL, A light receiving sensor 128 (see FIG. 1) that receives the light emitted from the outgoing light guide 126; Further, like the first sensor 100, the second sensor 120 may measure measurement light other than the exposure light EL. [0047] The incident light guide unit 122 can receive light traveling in the Z-axis direction, has a configuration in which a plurality of optical lenses LI and L2 are arranged in a cylindrical member, and is located on the side of the fine movement table 61. Be placed. The projection light guide unit 126 has a configuration in which a reference mark member FM and an optical lens L3 are disposed in a cylindrical member that passes through the fine movement table 61 in the vertical direction (Z-axis direction). The intermediate light guide unit 124 guides light incident on the incident light guide unit 122 to the output light guide unit 126, and an optical fiber or a plurality of optical elements (not shown) are arranged in the cylindrical member. Have a configuration. The intermediate light guide unit 124 is attached to the coarse motion table 62 by a clasp or the like, and has a configuration in which the incident light guide unit 122 is fixedly held at one end thereof. The other end of the intermediate light guide 124 is separated from the output light guide 126 (fine movement table 61). That is, a gap is formed between the outgoing light guide 126 and the intermediate light guide 124. Light is sent from the intermediate light guide 124 to the output light guide 126 via the gap. The reason why a gap is provided between the intermediate light guide part 124 and the outgoing light guide part 126 is to prevent the movement of the fine movement table 61 from being hindered. A bellows or the like formed of a flexible material may be arranged around or near the gap so that dust or unnecessary external light does not enter.

[0048] The light receiving sensor 128 is a sensor that is emitted in the Z-axis direction from the output light guide 126 (reference mark member FM), and receives light that passes through the projection optical system PL and the reticle R above the reticle R. It consists of a CCD camera.

In such a configuration, when the exposure light EL enters the incident light guide 122, it is guided to the output light guide 126 via the intermediate light guide 124, and illuminates the reference mark member FM also with a downward force. The light that illuminates the reference mark member FM is emitted in the Z-axis direction, and is received by the light receiving sensor 128 via the projection optical system PL and the reticle R.

In this case, alignment marks (not shown) are formed on the outer periphery of the pattern PA of the reticle R. The light receiving sensor 128 acquires an image including the reference mark formed on the reference mark member FM and the alignment mark formed on the reticle R. By measuring the positional deviation between the reference mark and the alignment mark, the relative positions of the reticle R and the fine movement table 61 can be measured. Furthermore, reticle scale alignment is performed based on the result of this position measurement.

Note that the exposure light EL that has passed through the reticle R and the projection optical system PL is incident on the output light guide 126. Alternatively, the light receiving sensor 128 disposed near the wafer stage WST may receive light through the intermediate light guide 124 and the incident light guide 122.

Thus, in the exposure apparatus EX, in the wafer stage WST having the fine movement table 61 and the coarse movement table 62, the first sensor 100 and the majority force of the second sensor 120 are provided on the coarse movement table 62. It has been. These sensors 100 and 120 are conventionally arranged on the upper surface of the fine movement table 61. Therefore, the fine movement table 61 can be reduced in weight and size accordingly. Further, the positioning accuracy of the fine movement table 61 can be improved.

[0053] The power described in the embodiment of the present invention has been described above. The operation procedure shown in the above-described embodiment, the shapes and combinations of the constituent members, etc. are examples, and the scope does not depart from the gist of the present invention. Various changes can be made based on process conditions and design requirements.

For example, the present invention includes the following modifications.

[0054] The interferometer system is used as the measurement system, and the present invention is not limited to the one that measures the position information of the mask stage and the substrate stage. For example, a hybrid system equipped with both an encoder system that detects the scale (diffraction grating) provided on the upper surface of the substrate stage and an interferometer system is adopted, and the measurement results of the interferometer system are used to measure the measurement results of the encoder system. May be calibrated. You can also switch the interferometer system and encoder system, or use both to control the position of the board stage!

In another embodiment, as disclosed in, for example, JP-T-2004-519850 (corresponding US Pat. No. 6,611,316), two mask patterns are passed through a projection optical system. It is possible to apply an exposure apparatus that synthesizes on the substrate and performs double exposure of one shot area on the substrate almost simultaneously by one scan exposure.

[0056] As the substrate, not only a semiconductor wafer for manufacturing a semiconductor device but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus ( Synthetic quartz, silicon wafers) or film members are applied. In addition, the substrate is a rectangle whose shape is not limited to a circle. Other shapes may be used.

In another embodiment, the exposure apparatus EX is disclosed in, for example, Japanese Patent Laid-Open No. 11-135400 (corresponding international publication 1999/23692) and Japanese Patent Laid-Open No. 2000-164504 (corresponding US Pat. No. 6,897,963). As disclosed, the measurement stage is movable independently of the substrate stage that holds the substrate, and includes a measurement member (for example, a reference member on which a reference mark is formed and Z or various photoelectric sensors). Can be provided.

In this embodiment, force using a mask to form a pattern is used. Instead, an electronic mask (also referred to as a variable shaping mask, an active mask, or a pattern generator) that generates a variable pattern is used. be able to. As the electronic mask, for example, a DMD (DeformaDle Micro-mirror Device X ^ Digital Micro-mirror Device) which is a kind of non-light emitting image display element (also called Spatial Light Modulator (SLM)) can be used. The DMD has a plurality of reflective elements (micromirrors) that are driven based on predetermined electronic data. The plurality of reflective elements are arranged in a two-dimensional matrix on the surface of the DMD, and are driven by element units for exposure. Reflects and deflects light. The angle of the reflecting surface of each reflecting element is adjusted. The operation of the DMD can be controlled by a controller. The control device drives the DMD reflecting element based on electronic data (pattern information) corresponding to the pattern to be formed on the substrate, and patterns the exposure light emitted from the illumination system with the reflecting element. Compared to exposure using a mask (reticle) on which a pattern is formed, DMD eliminates the need for mask replacement work and mask alignment on the mask stage when the pattern is changed. become. In an exposure apparatus using an electronic mask, the mask stage may not be provided, and the substrate may be simply moved in the X-axis and Y-axis directions by the substrate stage. An exposure apparatus using DMD is disclosed in, for example, JP-A-8-313842, JP-A-2004-304135, and US Pat. No. 6,778,257.

The exposure apparatus EX may be an immersion type exposure apparatus that exposes the wafer W through this liquid while disposing a liquid between the projection optical system PL and the wafer W. The immersion method is disclosed in, for example, WO99Z49504 pamphlet. As the liquid, water (pure water) may be used, or other than water, such as perfluorinated polyether (PFPE) or fluorine Fluorine-based fluids such as oils or cedar oils may be used. As the liquid, a liquid having a higher refractive index with respect to exposure light than water, for example, a refractive index of about 1.6 to 1.8 may be used.

The application of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor, or an exposure apparatus for liquid crystal that exposes a liquid crystal display element pattern on a square glass plate. It can be widely applied to exposure equipment for manufacturing CCD), micromachines, MEMS, DNA chips, reticles or masks.

[0061] As long as permitted by law, the disclosure of all publications and US patents related to the exposure apparatus and the like cited in each of the above embodiments and modifications is incorporated as part of the description of the text. To do.

The exposure apparatus EX of the present embodiment is manufactured by assembling various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, Various subsystem forces are adjusted to achieve electrical accuracy for the system. The assembly process to the exposure equipment involves mechanical connections, electrical circuit wiring connections, pneumatic circuit piping connections, etc. among various subsystems. included. It is a matter of course that there is an assembly process for each subsystem before the assembly process for the exposure system. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. It is desirable to manufacture the exposure apparatus in a clean room where the temperature and cleanliness are controlled.

[0063] As shown in FIG. 5, the semiconductor device has a function / performance design step 201, a mask (reticle) production step 202 based on the design step, and a substrate (device substrate) ( Ueno, a glass plate) 203, a substrate processing step 204 for exposing the pattern of the reticle R onto the wafer W by the exposure apparatus of the above-described embodiment, a device assembly step (dicing process, bonding process, package) 205), inspection step 206 and the like.

Claims

The scope of the claims

[1] a base section;

A first moving member movable relative to the base portion;

A second moving member that holds the object and is movable with respect to the first moving member, and at least a part of the second moving member is installed on the first moving member, and measures the characteristics of the energy beam irradiated on the object And a stage device.

[2] The object is a photosensitive substrate,

2. The stage apparatus according to claim 1, wherein the measuring device includes at least one of an illuminance sensor that detects illuminance of the energy beam and an illuminance unevenness sensor that measures illuminance unevenness of the energy beam.

3. The stage device according to claim 2, wherein the measuring device includes a position adjusting device that substantially matches a detection surface for detecting the energy beam with an imaging surface of the energy beam.

[4] The measurement device includes a light receiving unit that receives the energy beam, a light guide unit that transmits the beam received by the light receiving unit, and a sensor unit that receives the beam from the light guide unit. The stage apparatus according to any one of claims 1 to 3, wherein at least the light guide section is installed on the first moving member.

[5] The measurement apparatus according to claim 4, wherein the measurement device further includes a light transmission unit that transmits the energy beam to the sensor unit, and the light transmission unit is installed on the second moving member. The stage apparatus as described.

[6] The stage device according to any one of claims 1 to 5, wherein the second moving member is movable in at least six degrees of freedom.

[7] The apparatus according to any one of claims 1 to 6, further comprising a drive device, a part of which is installed on the first moving member and moves the second moving member relative to the first moving member. The stage apparatus as described in any one of these.

[8] An exposure apparatus that forms a predetermined image on a substrate held on a substrate stage, wherein the stage device according to any one of claims 1 to 7 is used as the substrate stage. An exposure apparatus characterized by the above.

[9] An exposure apparatus for forming an image of a mask pattern held on a mask stage on a substrate held on a substrate stage,

An exposure apparatus using the stage apparatus according to claim 1 for at least one of the mask stage and the substrate stage.

[10] A device manufacturing method including a lithographic process, wherein the exposure apparatus according to claim 8 or 9 is used in the lithographic process.