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WO2007137284A3 - Probe needle protection method for high current probe testing of power devices - Google Patents

Probe needle protection method for high current probe testing of power devices Download PDF

Info

Publication number
WO2007137284A3
WO2007137284A3 PCT/US2007/069532 US2007069532W WO2007137284A3 WO 2007137284 A3 WO2007137284 A3 WO 2007137284A3 US 2007069532 W US2007069532 W US 2007069532W WO 2007137284 A3 WO2007137284 A3 WO 2007137284A3
Authority
WO
WIPO (PCT)
Prior art keywords
current
probes
high current
probe
protection method
Prior art date
Application number
PCT/US2007/069532
Other languages
French (fr)
Other versions
WO2007137284A2 (en
Inventor
Gary Rogers
Steve Clauter
Rodney Schwartz
Taichi Ukai
Joe Lambright
Dave Lohr
Original Assignee
Integrated Technology Corp
Gary Rogers
Steve Clauter
Rodney Schwartz
Taichi Ukai
Joe Lambright
Dave Lohr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Technology Corp, Gary Rogers, Steve Clauter, Rodney Schwartz, Taichi Ukai, Joe Lambright, Dave Lohr filed Critical Integrated Technology Corp
Priority to JP2009512282A priority Critical patent/JP2009538428A/en
Publication of WO2007137284A2 publication Critical patent/WO2007137284A2/en
Publication of WO2007137284A3 publication Critical patent/WO2007137284A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/36—Overload-protection arrangements or circuits for electric measuring instruments
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

A test system, apparatus and method for applying high current test stimuli to a semiconductor device (4, 10, 20) in wafer or chip form includes a plurality of probes (2) for electrically coupling to respective contact points (3) on the semiconductor device, a plurality of current limiters (5) electrically coupled to respective ones of the plurality of probes (2), and a current sensor (6) electrically coupled to the plurality of probes. The current limiters (5) are operative to limit current flow passing through a respective probe (2), and the current sensor is operative to provide a signal when detected current in any contact of the plurality of probes exceeds a threshold level.
PCT/US2007/069532 2006-05-23 2007-05-23 Probe needle protection method for high current probe testing of power devices WO2007137284A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009512282A JP2009538428A (en) 2006-05-23 2007-05-23 Protecting probe needles for high current probe testing of power devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US74798106P 2006-05-23 2006-05-23
US60/747,981 2006-05-23

Publications (2)

Publication Number Publication Date
WO2007137284A2 WO2007137284A2 (en) 2007-11-29
WO2007137284A3 true WO2007137284A3 (en) 2008-03-27

Family

ID=38724104

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/069532 WO2007137284A2 (en) 2006-05-23 2007-05-23 Probe needle protection method for high current probe testing of power devices

Country Status (3)

Country Link
JP (1) JP2009538428A (en)
MY (1) MY147251A (en)
WO (1) WO2007137284A2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012031362A1 (en) * 2010-09-07 2012-03-15 Corporation De L ' Ecole Polytechnique De Montreal Methods, apparatus and system to support large-scale micro- systems including embedded and distributed power supply, thermal regulation, multi-distributed-sensors and electrical signal propagation
JP5291157B2 (en) 2011-08-01 2013-09-18 東京エレクトロン株式会社 Probe card for power devices
JP6092729B2 (en) * 2013-07-19 2017-03-08 新光電気工業株式会社 Probe card and manufacturing method thereof
US11041900B2 (en) 2014-03-26 2021-06-22 Teradyne, Inc. Equi-resistant probe distribution for high-accuracy voltage measurements at the wafer level
US10698020B2 (en) 2014-03-26 2020-06-30 Teradyne, Inc. Current regulation for accurate and low-cost voltage measurements at the wafer level
JP6339834B2 (en) * 2014-03-27 2018-06-06 東京エレクトロン株式会社 Board inspection equipment
JP6351442B2 (en) * 2014-08-28 2018-07-04 ルネサスエレクトロニクス株式会社 Semiconductor test equipment
US10330703B2 (en) * 2017-04-04 2019-06-25 Formfactor Beaverton, Inc. Probe systems and methods including electric contact detection
US10684311B2 (en) * 2017-05-10 2020-06-16 Tektronix, Inc. High input impedance electro-optic sensor
KR102781502B1 (en) * 2019-05-28 2025-03-17 삼성전자주식회사 Test board and test system for semiconductor package
US11740278B2 (en) * 2019-08-02 2023-08-29 Infineon Technologies Ag Electronic test equipment apparatus and methods of operating thereof
CN110426622B (en) * 2019-08-15 2024-08-20 北京华峰测控技术股份有限公司 Voltage and current source test circuit and test method
CN111562481B (en) * 2020-05-25 2022-08-02 中国电子科技集团公司第十三研究所 Compound semiconductor chip on-chip test circuit based on power-on probe
CN116243095B (en) * 2023-05-10 2023-07-21 深圳弘远电气有限公司 Automatic program control-based test circuit, test device and control method thereof
CN117214649B (en) * 2023-11-07 2024-07-02 珠海格力电子元器件有限公司 Power device testing device and method
CN118311306B (en) * 2024-06-07 2024-09-24 北京智芯微电子科技有限公司 Protection module, test device, test equipment and test method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5365180A (en) * 1993-04-16 1994-11-15 National Semiconductor Corporation Method for measuring contact resistance
US5455502A (en) * 1993-09-14 1995-10-03 Sony/Tektronix Corporation High speed, large-current power control circuit
US20020003432A1 (en) * 1995-08-09 2002-01-10 James Marc Leas Semiconductor wafer test and burn-in
DE10308333A1 (en) * 2003-02-26 2004-09-16 Infineon Technologies Ag Burn-in system for semiconductor devices on wafer plane, has power supplies connected to input contacts of contacting device, and with signal contacts connected to measuring contacts
US20050237073A1 (en) * 2004-04-21 2005-10-27 Formfactor, Inc. Intelligent probe card architecture
US20060028221A1 (en) * 2004-07-26 2006-02-09 Nec Electronics Corporation Method and apparatus for contact resistance measurement
US7029932B1 (en) * 2005-02-07 2006-04-18 Texas Instruments Incorporated Circuit and method for measuring contact resistance
US20060091898A1 (en) * 2004-03-15 2006-05-04 Rainer Gaggl Unknown

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142526A (en) * 1983-12-29 1985-07-27 Toshiba Corp Measurement of electrical characteristics of semiconductor element
JPH0469715A (en) * 1990-07-10 1992-03-04 Mitsubishi Electric Corp Dc power unit
US5642035A (en) * 1994-06-16 1997-06-24 Bio-Rad Laboratories Transfection high-voltage controller
JPH104624A (en) * 1996-06-13 1998-01-06 Nec Gumma Ltd Overvoltage protective circuit and electronic circuit furnished therewith
JP2001053120A (en) * 1999-08-09 2001-02-23 Sharp Corp Semiconductor integrated circuit with overcurrent detection fountain and manufacture thereof
JP2002095157A (en) * 2000-07-10 2002-03-29 Matsushita Electric Ind Co Ltd Overcharge prevention circuit
JP2003038679A (en) * 2001-08-02 2003-02-12 Alinco Inc Electric walker
JP2004085247A (en) * 2002-08-23 2004-03-18 Mitsubishi Electric Corp Probe card

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5365180A (en) * 1993-04-16 1994-11-15 National Semiconductor Corporation Method for measuring contact resistance
US5455502A (en) * 1993-09-14 1995-10-03 Sony/Tektronix Corporation High speed, large-current power control circuit
US20020003432A1 (en) * 1995-08-09 2002-01-10 James Marc Leas Semiconductor wafer test and burn-in
DE10308333A1 (en) * 2003-02-26 2004-09-16 Infineon Technologies Ag Burn-in system for semiconductor devices on wafer plane, has power supplies connected to input contacts of contacting device, and with signal contacts connected to measuring contacts
US20060091898A1 (en) * 2004-03-15 2006-05-04 Rainer Gaggl Unknown
US20050237073A1 (en) * 2004-04-21 2005-10-27 Formfactor, Inc. Intelligent probe card architecture
US20060028221A1 (en) * 2004-07-26 2006-02-09 Nec Electronics Corporation Method and apparatus for contact resistance measurement
US7029932B1 (en) * 2005-02-07 2006-04-18 Texas Instruments Incorporated Circuit and method for measuring contact resistance

Also Published As

Publication number Publication date
JP2009538428A (en) 2009-11-05
WO2007137284A2 (en) 2007-11-29
MY147251A (en) 2012-11-14

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