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WO2007066141A1 - Procédé visant à inhiber une déflagration dans une pompe à vide - Google Patents

Procédé visant à inhiber une déflagration dans une pompe à vide Download PDF

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Publication number
WO2007066141A1
WO2007066141A1 PCT/GB2006/050366 GB2006050366W WO2007066141A1 WO 2007066141 A1 WO2007066141 A1 WO 2007066141A1 GB 2006050366 W GB2006050366 W GB 2006050366W WO 2007066141 A1 WO2007066141 A1 WO 2007066141A1
Authority
WO
WIPO (PCT)
Prior art keywords
reactant
vacuum pump
foreline
pump
process chamber
Prior art date
Application number
PCT/GB2006/050366
Other languages
English (en)
Inventor
Michael Roger Czerniak
Original Assignee
Edwards Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Edwards Limited filed Critical Edwards Limited
Publication of WO2007066141A1 publication Critical patent/WO2007066141A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
    • B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
    • B08B9/027—Cleaning the internal surfaces; Removal of blockages
    • B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
    • B08B9/0321—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
    • F04C29/00—Component parts, details or accessories of pumps or pumping installations, not provided for in groups F04C18/00 - F04C28/00
    • F04C29/0092—Removing solid or liquid contaminants from the gas under pumping, e.g. by filtering or deposition; Purging; Scrubbing; Cleaning
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D19/00—Axial-flow pumps
    • F04D19/02—Multi-stage pumps
    • F04D19/04—Multi-stage pumps specially adapted to the production of a high vacuum, e.g. molecular pumps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D29/00—Details, component parts, or accessories
    • F04D29/70—Suction grids; Strainers; Dust separation; Cleaning
    • F04D29/701—Suction grids; Strainers; Dust separation; Cleaning especially adapted for elastic fluid pumps

Definitions

  • This invention relates to a method of inhibiting a deflagration in a vacuum pump due to the accumulation within the pump of solid material that can cause a deflagration upon exposure to the atmosphere.
  • An epitaxial layer is a carefully grown, single crystal silicon film.
  • Epitaxial deposition utilizes a silicon source gas, typically silane or one of the chlorosilane compounds, such as trichlorosilane or dichlorosilane, in a hydrogen atmosphere at high temperature, typically around 800 - 1 100O, and under a vacuum condition.
  • Epitaxial deposition processes are often doped with small amounts of boron, phosphorus, arsenic, or carbon, as required, for the device being fabricated.
  • Hydrogen chloride may also be used to clean the chamber between deposition runs.
  • the residence time of the deposition gases in the processing chamber is relatively short, and only a small proportion of the gas supplied to the chamber is consumed during the deposition process.
  • a problem associated particularly with epitaxial deposition processes is that the by-products can adhere to, or be deposited on, the inner wall surface of the vacuum pump, the foreline extending between the processing chamber and the vacuum pump and into the pump exhaust pipework.
  • Such by-products tend to be compounds of silicon and chlorine, or compounds of silicon and hydrogen.
  • These by-products may include chlorosilane polymers of the form Si x Cl y H z . These polymers can be converted to self-ignitable or explosive materials, for example polysiloxanes, if exposed to moisture contained in the atmosphere.
  • the present invention provides a method of inhibiting a
  • the method comprising the step of supplying to the pump during operation thereof a reactant for chemically reacting with solid material that has accumulated within the pump during said operation and which can cause a deflagration upon exposure to the atmosphere.
  • the reactant is preferably one of a chlorocompound, that is, a compound that includes chlorine, such as hydrogen chloride or chlorine trifluoride, or a
  • fluorocompound that is a compound that includes fluorine.
  • HCI may react with a chlorosilane polymer to form silicon tetrachloride, which may be treated in an abatement device located downstream from the pump.
  • the reactant is preferably supplied to a foreline extending between an inlet of the vacuum pump and a process chamber that is evacuated using the vacuum pump. In addition to the removal of solid material from the vacuum pump, this can enable solid material to be removed from the part of the foreline located downstream from the location at which the reactant enters the foreline.
  • the reactant may be continuously or periodically supplied to the vacuum pump. In order to isolate the process chamber from the reactant, the reactant is preferably supplied into the foreline downstream from a valve for selectively isolating the vacuum pump from the process chamber.
  • the reactant may be supplied to an inlet of the vacuum pump. For example, if the vacuum pump is a multi-stage pump, the inlet may be located between stages of the pump. Alternatively, the reactant may be added directly into the pumping mechanism of the pump, together with, or in place of, a nitrogen purge gas.
  • Gases such as hydrogen chloride may be used to clean the process chamber, and so using such a cleaning gas as the reactant can enable the reactant to be conveniently supplied from the source of the cleaning gas, rather than from a separate source.
  • the present invention provides a vacuum pumping
  • An abatement device may be located downstream from the pump for abating a byproduct from the reaction between the solid material and the reactant.
  • the vacuum pumping arrangement includes a vacuum pump 12 and a foreline 14 for conveying exhaust gas from the process chamber 10 to the vacuum pump 12.
  • the vacuum pump 14 has an exhaust 16 connected to an inlet 18 of an abatement device 20, for example a combustion device.
  • the arrangement finds particular use with a process chamber 10 in which an epitaxial deposition process is performed.
  • process gases such as trichlorosilane or dichlorosilane, hydrogen and sources of dopants boron, phosphorus, arsenic, or carbon
  • the gas exhaust from the process chamber 10 can include polymeric material, typically compounds of silicon and chlorine, for example a chlorosilane polymer, in a gaseous form.
  • This material can adhere to, or be deposited on, the inner wall surface of the vacuum pump 12 and the foreline 14.
  • a problem associated with such materials is that they can be converted to self- ignitable or explosive materials, for example polysiloxanes, if exposed to moisture contained in the atmosphere during servicing of the vacuum pumping
  • the arrangement includes a source 26 of a reactant, for example, a chlorocompound such as HCI or CIF 3 , or a fluorocompound such as HF, and preferably of controlled humidity, for reacting with the accumulated material within the vacuum pump 12 and foreline 14 to form non-explosive material.
  • a reactant for example, a chlorocompound such as HCI or CIF 3 , or a fluorocompound such as HF, and preferably of controlled humidity, for reacting with the accumulated material within the vacuum pump 12 and foreline 14 to form non-explosive material.
  • This reactant may be the same as, or different from, a cleaning gas which is periodically supplied to the chamber 10 from a separate source 28 thereof for cleaning the chamber 10. If the reactant and the cleaning gas are the same, a single source may be provided for supplying this gas to the chamber 10 and/or the vacuum pump 12 as required.
  • the reactant is conveyed from the source 26 directly into the foreline 14 through a reactant inlet 28. The reactant can then flow through the portion of the foreline downstream from the inlet 28, and pass through the vacuum pump 12. Alternatively, the reactant may be conveyed directly into the vacuum pump 12, for example through one or more ports located in the body of the pump 12.
  • the reactant is supplied to the foreline 14 during operation of the vacuum pump 12, that is, when the accumulated material is at a sub-atmospheric pressure and therefore is less prone to reaction with any humidity contained within the gases flowing through the arrangement.
  • the reactant inlet 28 is located downstream from an isolation valve 30 located in the foreline 14 to enable the process chamber 10 to be isolated from the vacuum pump 12 when the reactant is supplied to the foreline 14. This can enable atmospheric pressure processes to be carried out within the process chamber 10 while the vacuum pump 12 remains operational and reactant is being supplied to the pump 12. Consequently, a controller 32 may synchronise the opening and closing of a valve 34 for regulating the supply of reactant to the inlet 28 with the operation of the isolation valve 30, so that the valve 34 is open only when the isolation valve 30 is closed.
  • the reactant may be continuously supplied to the pump 12, particularly when any migration of reactant from the foreline 14 into the process chamber 10 through an open isolation valve does not interfere with any process being conducted at a sub- atmospheric pressure within the process chamber 10.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un procédé visant à inhiber une déflagration dans une pompe à vide. Le procédé ci-décrit met en jeu l’étape qui consiste à fournir un réactif à la pompe pendant son fonctionnement pour que ledit réactif réagisse chimiquement avec une matière solide qui s’est accumulée dans la pompe pendant ledit fonctionnement et qui peut entraîner une déflagration en cas d’exposition à l’atmosphère.
PCT/GB2006/050366 2005-12-09 2006-11-01 Procédé visant à inhiber une déflagration dans une pompe à vide WO2007066141A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0525136A GB0525136D0 (en) 2005-12-09 2005-12-09 Method of inhibiting a deflagration in a vacuum pump
GB0525136.8 2005-12-09

Publications (1)

Publication Number Publication Date
WO2007066141A1 true WO2007066141A1 (fr) 2007-06-14

Family

ID=35735856

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2006/050366 WO2007066141A1 (fr) 2005-12-09 2006-11-01 Procédé visant à inhiber une déflagration dans une pompe à vide

Country Status (2)

Country Link
GB (1) GB0525136D0 (fr)
WO (1) WO2007066141A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008022916A1 (fr) * 2006-08-23 2008-02-28 Oerlikon Leybold Vacuum Gmbh Procédé pour annuler la réaction des poussières autoinflammables dans un dispositif de pompe à vide d'air
EP2179776A1 (fr) * 2008-10-21 2010-04-28 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Repressurisation d'un VSA traitant un mélange gazeux comprenant un combustible
EP2231897A1 (fr) * 2007-12-13 2010-09-29 Optogan OY Dispositif de réacteur hvpe

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296944A1 (fr) * 1987-06-19 1988-12-28 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procédé de traitement d'effluents gazeux provenant de la fabrication de composants électroniques et appareil d'incinération pour sa mise en oeuvre
JPH06342785A (ja) * 1993-06-01 1994-12-13 Fujitsu Ltd 気相成長装置の排気装置とその清浄化方法
EP0985828A1 (fr) * 1998-09-10 2000-03-15 Alcatel Procédé et dispositif pour éviter les dépôts dans une pompe turbomoléculaire à palier magnétique ou gazeux
US20020034880A1 (en) * 2000-09-21 2002-03-21 Kabushiki Kaisha Toshiba Semiconductor processing apparatus and method for manufacturing a semiconductor device
WO2004036047A1 (fr) * 2002-10-14 2004-04-29 The Boc Group Plc Pompe a vide a piston rotatif pourvue d'un equipement de lavage

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296944A1 (fr) * 1987-06-19 1988-12-28 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procédé de traitement d'effluents gazeux provenant de la fabrication de composants électroniques et appareil d'incinération pour sa mise en oeuvre
JPH06342785A (ja) * 1993-06-01 1994-12-13 Fujitsu Ltd 気相成長装置の排気装置とその清浄化方法
EP0985828A1 (fr) * 1998-09-10 2000-03-15 Alcatel Procédé et dispositif pour éviter les dépôts dans une pompe turbomoléculaire à palier magnétique ou gazeux
US20020034880A1 (en) * 2000-09-21 2002-03-21 Kabushiki Kaisha Toshiba Semiconductor processing apparatus and method for manufacturing a semiconductor device
WO2004036047A1 (fr) * 2002-10-14 2004-04-29 The Boc Group Plc Pompe a vide a piston rotatif pourvue d'un equipement de lavage

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008022916A1 (fr) * 2006-08-23 2008-02-28 Oerlikon Leybold Vacuum Gmbh Procédé pour annuler la réaction des poussières autoinflammables dans un dispositif de pompe à vide d'air
US20100086883A1 (en) * 2006-08-23 2010-04-08 Oerlikon Leybold Vacuum Gmbh Method for reacting self-igniting dusts in a vacuum pump device
EP2231897A1 (fr) * 2007-12-13 2010-09-29 Optogan OY Dispositif de réacteur hvpe
EP2231897A4 (fr) * 2007-12-13 2012-12-05 Optogan Oy Dispositif de réacteur hvpe
EP2179776A1 (fr) * 2008-10-21 2010-04-28 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Repressurisation d'un VSA traitant un mélange gazeux comprenant un combustible

Also Published As

Publication number Publication date
GB0525136D0 (en) 2006-01-18

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