[go: up one dir, main page]

WO2007009364A1 - Solution detergente et son utilisation - Google Patents

Solution detergente et son utilisation Download PDF

Info

Publication number
WO2007009364A1
WO2007009364A1 PCT/CN2006/001701 CN2006001701W WO2007009364A1 WO 2007009364 A1 WO2007009364 A1 WO 2007009364A1 CN 2006001701 W CN2006001701 W CN 2006001701W WO 2007009364 A1 WO2007009364 A1 WO 2007009364A1
Authority
WO
WIPO (PCT)
Prior art keywords
compound
cleaning solution
cleaning
metal
solution according
Prior art date
Application number
PCT/CN2006/001701
Other languages
English (en)
French (fr)
Inventor
Chris Chang Yu
Danny Zhenglong Shiao
Andy Chunxiao Yang
Judy Jianfen Jing
Sunny Chun Xu
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd filed Critical Anji Microelectronics (Shanghai) Co., Ltd
Publication of WO2007009364A1 publication Critical patent/WO2007009364A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/16—Metals

Definitions

  • the present invention relates to a cleaning fluid and its use, and more particularly to a cleaning fluid for cleaning integrated circuit wafers. Background technique
  • the typical cleaning solutions in the prior art are mainly deionized water, hydrogen peroxide solution and dilute ammonia water, and these cleaning liquids are mainly used for cleaning the residual liquid in the pre-process.
  • the pre-ordering process is as follows: 1) Chemical mechanical polishing process, a small amount of polishing liquid remains on the metal surface after chemical mechanical polishing; 2) etching to remove the strong photoresist process, and the process will also leave a strong photoresist 3) deposition process and other processes.
  • the residual liquid is cleaned, but the corrosion of the metal surface still exists. Corrosion of the metal surface affects the flatness of the metal surface and also keeps the defect level high, thereby reducing product yield and yield.
  • the cleaning liquid in the patent US6147002 relates to a cleaning solution for an acidic aqueous solution, which further comprises 0.5 to 5% by weight of a fluorine-containing substance, which is suitable for cleaning integrated circuit components of a copper metal semiconductor wafer.
  • the cleaning liquid in the above patents is either toxic or unfriendly to the environment; or the cleaning efficiency is not high enough; or the cleaning range is narrow.
  • the cleaning liquid of US6443814 can only clean the wafer containing the copper metal layer.
  • a cleaning fluid comprising at least one carrier further comprising a metal corrosion inhibitor.
  • the metal corrosion inhibitor is preferably a polycarboxylic acid and/or a salt thereof.
  • the polycarboxylic acid and/or its salt is preferably a polyacrylic compound and/or a salt thereof.
  • the polycarboxylic acid is preferably a polyacrylic compound, or a copolymerized compound of an acrylic compound and styrene, or a copolymerized compound of an acrylic compound and maleic anhydride, or an acrylic compound and acrylic acid.
  • Copolymer compounds of esters, their molecular weights are
  • the polycarboxylic acid and/or its salt are preferably a compound of formula I:
  • R 2 is independently a hydrogen atom or an alkyl group having a carbon number of less than 3, and is K, Na or ⁇ 4 .
  • the polyacrylic compound and/or its salt is more preferably polyacrylic acid, and its molecular weight is preferably from 10,000 to 30,000.
  • the cleaning solution of the present invention may further comprise a pH adjusting agent.
  • the cleaning liquid of the present invention preferably further comprises a nitrogen-containing heterocyclic compound to further improve the cleaning effect.
  • the nitrogen-containing heterocyclic compound is preferably benzotriazole, pyrazole and/or imidazole, more preferably benzotriazole.
  • the carrier is preferably an alcohol and/or water, and the alcohol may be glycerol.
  • the mass concentration of the metal anti-corrosion inhibitor is preferably 0.0001 ⁇
  • Another object of the present invention is to provide the use of the cleaning liquid in a metal substrate, which is aluminum, copper, tantalum, tantalum nitride, titanium, titanium nitride, silver, gold, preferably aluminum.
  • the positive progress of the present invention is as follows: Compared with a typical cleaning liquid, the cleaning liquid provided by the invention greatly reduces the degree of corrosion of the metal material, thereby having the following advantages: (1) causing a significant decrease in the defect rate of the metal surface; ) greatly improve the flatness of the metal surface; (3) improve product quality, increase profitability, and (4) improve cleaning efficiency.
  • Figure 1A is a scanning electron microscope (SEM) image of the metal surface after cleaning with a deionized water cleaning solution
  • Figure 1B is an SEM image of the metal surface after cleaning using the cleaning solution of the present invention.
  • Figure 2A is an atomic force microscope (AFM) diagram of the surface roughness of a metal after washing with deionized water;
  • 2B is an atomic force microscope diagram of the surface roughness of the metal after cleaning using the cleaning solution of the present invention
  • Figure 3A is an optical microscope dark field diagram of the surface of the metal aluminum after brush cleaning with deionized water.
  • the black matrix in the figure is metal aluminum, and the white dots are corroded;
  • Fig. 3B is an optical microscope dark field diagram of the surface of the metal aluminum after brush cleaning using the cleaning liquid of the present invention.
  • a cleaning solution (pH 5.3) containing 800 ppm of polyacrylic acid (molecular weight: 30,000) and water was used to clean the surface of the aluminum metal polished with a chemical mechanical polishing liquid.
  • the process of polishing aluminum metal by chemical mechanical polishing liquid is: lower pressure l psi, polishing plate rotation speed 100 ipm, polishing head rotation speed 105 rpm, cleaning liquid flow rate 200 ml/min, cleaning time 1 min; (2) then Deionized water and polyvinyl alcohol (PVA) roller brush and the cleaning liquid and PVA roller brush on the aluminum metal surface of the wafer Brush for 1 min, roller brush speed is 100 rpm; (3) remove and wash with deionized water and PVA roller for 1 min.
  • the cleaning results are shown in Figure 1B.
  • the process of polishing aluminum metal by chemical mechanical polishing liquid is: lower pressure 1 psi, polishing plate rotation speed 100 rpm, polishing head rotation speed 105 rpm, cleaning liquid flow rate 200 ml/min, cleaning time 1 min; (2) then The surface of the aluminum metal on the wafer was brushed with deionized water and polyvinyl alcohol (PVA) roller brush and the cleaning liquid and PVA roller brush for 1 min, and the rolling speed was 100 rpm; (3) deionized again. Water and PVA roller brush for 1 min. The cleaning results are shown in Figure 2B.
  • PVA polyvinyl alcohol
  • the process of polishing aluminum metal by chemical mechanical polishing liquid is: lower pressure 1 psi, polishing plate rotation speed 100 rpm, polishing head rotation speed 105 rpm, cleaning liquid flow rate 200 ml/min; (2) then deionized water separately And the PVA roller brush and the cleaning liquid and the PVA roller brush to scrub the aluminum metal surface on the wafer 1 Min, roller brush speed is lOO rpm; (3) statically placed in ionized water for 30 min after brushing; (4) and then removed with deionized water and PVA roller brush for 1 min.
  • the cleaning solution containing the metal anti-corrosion inhibitor of the invention can effectively prevent the corrosion of the metal aluminum (see Fig. 3A), and the metal aluminum washed with deionized water has a large amount of Corrosion (see Figure 3B).
  • the process of polishing aluminum metal by chemical mechanical polishing liquid is: lower pressure l psi, polishing plate rotation speed 100 rpm, polishing head rotation speed 105 rpm, cleaning liquid flow rate 200 ml/min, cleaning time 1 min;
  • the surface of the aluminum metal on the wafer was brushed with deionized water and PVA roller brush and the cleaning liquid and PVA roller brush for 1 min respectively, and the rolling speed was 100 rpm; (3) the deionized water and PVA roller brush were taken out again. Brush for 1 min.
  • a cleaning solution (pH 3.0) containing 25 ppm of polyacrylic acid (molecular weight: 30,000), 500 ppm of BTA and water was used to clean the surface of the aluminum metal polished with a chemical mechanical polishing solution.
  • the process of polishing aluminum metal by chemical mechanical polishing liquid is: lower pressure l psi, polishing plate rotation speed 100 rpm, polishing head rotation speed 105 rpm.
  • the surface of the aluminum metal on the wafer was brushed with deionized water and PVA roller brush and the cleaning liquid and PVA roller brush for 1 min, and the rolling speed was 100 rpm; (3) and then washed with deionized water and PVA roller brush for 1 min.
  • the process of polishing copper metal by chemical mechanical polishing liquid is: lower pressure lpsi, polishing plate rotation speed 100 rpm, polishing head rotation speed 105 rpm, cleaning liquid flow rate 200 ml/min, cleaning time 1 min; (2) then separately The surface of the copper metal on the wafer was brushed with deionized water and PVA roller brush and the cleaning liquid and PVA roller brush for 1 min, and the rolling speed was 100 rpm; (3) and then washed with deionized water and PVA roller brush 1
  • the process of polishing copper metal by chemical mechanical polishing liquid is: lower pressure lpsi, polishing plate rotation speed 100 rpm, polishing head rotation speed 105 rpm, cleaning liquid flow rate 200 ml/min, cleaning time 1 min; (2) then separately The surface of the copper metal on the wafer was brushed with deionized water and PVA roller brush and the cleaning liquid and PVA roller brush for 1 min, and the rolling speed was 100 rpm; (3) and then washed with deionized water and PVA roller brush Lmin.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Description

清洗液及其用途 技术领域
本发明涉及一种清洗液及其用途，尤其涉及一种清洗集成电路晶片的清 洗液。 背景技术
现有技术中典型的清洗液主要是去离子水、 过氧化氢溶液和稀氨水等， 这些清洗液主要用于清洗前序工艺中的残留液。 该前序工艺比如是： 1 ) 化 学机械抛光工艺， 经过化学机械抛光后的金属表面会残留少量的抛光液； 2) 刻蚀去强光阻工艺， 该工艺之后也会残留去强光阻液； 3 ) 沉积工艺以及其 他工艺等等。其中的残留液被清洗干净后， 但金属表面的腐蚀仍然存在。金 属表面的腐蚀会影响金属表面平坦度， 也使缺陷水平居高不下， 从而降低产 品良率和收益率。
一些清洗液已被公开， 如美国专利 US2004/0204329, US2003/0216270, US2004/0082180 , US6147002 , US6443814， US6719614 , US6767409， US6482749等， 其都是关于清洗液或清洗液的使用方法。如专利 US6147002 中的清洗液是关于一种酸性水溶液的清洗液，其还包括 0.5〜5重量％的含氟 物质， 该清洗液适合于清洗铜金属半导体晶片的集成电路元器件。但上述专 利中的清洗液， 或是含有毒性物质， 对环境不友善； 或是清洗效率不够高等 缺陷；或是清洗使用范围窄，例如 US6443814专利的清洗液只能够清洗含铜 金属层的晶片。 本发明的目的是为了解决上述问题， 提供一种清洗液。
一种清洗液， 其包括至少一种载体， 其还包括一种金属防腐抑制剂。 其中， 所述的金属防腐抑制剂较佳地为多聚羧酸和 /或其盐。
所述的多聚羧酸和 /或其盐较佳地为聚丙烯酸类化合物和 /或其盐。
所述的多聚羧酸较佳地为聚丙烯酸类化合物，或者为丙烯酸类化合物与 苯乙烯的共聚化合物， 或者为丙烯酸类化合物与顺丁烯二酸酐的共聚化合 物， 或者为丙烯酸类化合物与丙烯酸酯类的共聚化合物， 它们分子量在
2,000〜1,000,000之间， 较佳地在 10000〜500000之间。
所述的多聚羧酸和 /或其盐优选式 I化合物：
Figure imgf000003_0001
式 I 其中， 、 R2独自地为氢原子或碳原子数小于 3的烷基， 为 K、 Na或 ΝΗ4。
所述的聚丙烯酸类化合物和 /或其盐更优选聚丙烯酸， 其分子量优选为 10,000〜30,000。
本发明的清洗液还可以包括 ρΗ调节剂。
本发明的清洗液还较佳地包括含氮杂环化合物， 以进一步提高清洗效 果。
所述的含氮杂环化合物优选苯并三唑、吡唑和 /或咪唑，更优选苯并三唑。 所述的载体较佳地为醇类和 /或水， 所述的醇类可以是丙三醇。
在本发明的清洗液中，该金属防腐抑制剂的质量浓度较佳地为 0.0001〜
20%, 该载体为余量。
本发明的另一目的是提供所述的清洗液在金属衬底中的用途，所述的金 属衬底为铝、 铜、 钜、 氮化钽、 钛、 氮化钛、 银、 金， 优选铝。 本发明的积极进步效果在于： 与典型的清洗液相比， 本发明提供的清洗 液大大降低了金属材料的腐蚀程度， 从而具有如下优点： （1 )使得金属表面 的缺陷率明显下降； （2)大大改善金属表面的平坦度； （3 ) 提高产品质量， 增加收益率， （4)提高清洗效率。 附图说明
图 1A 为使用去离子水清洗液清洗后的金属表面的扫描电子显微镜 (SEM) 图；
图 1B为使用本发明的清洗液清洗后的金属表面的 SEM图；
图 2A为使用去离子水清洗后的金属表面粗糙度的原子力显微镜 (AFM) 图；
图 2B为使用本发明的清洗液清洗后的金属表面粗糙度的原子力显微镜 图；
图 3A为使用去离子水进行刷清洗后的金属铝表面的光学显微镜暗场 图， 图中的黑底为金属铝， 白圆点为腐蚀；
图 3B为使用本发明的清洗液进行刷清洗后的金属铝表面的光学显微镜 暗场图。 发明内容 实施例 1
将含有 800 ppm聚丙烯酸 （分子量为 30,000) 和水为余量的清洗液 (pH=5.3 )清洗用化学机械抛光液抛光后的铝金属表面。 （1 )化学机械抛光 液抛光铝金属的工艺为： 下压力 l psi、 抛光盘的转速 100 ipm、 抛光头转速 105 rpm、 清洗液流速 200 ml/min、 清洗时间 1 min; (2)然后再分别用去离 子水及聚乙烯醇（PVA)滚刷和该清冼液及 PVA滚刷对晶片上的铝金属表面 进行刷洗 l min， 滚刷转速为 100 rpm; (3 ) 再取出用去离子水及 PVA滚刷 刷洗 l min。 清洗结果见图 1B。
结果显示， 与使用去离子水清洗液清洗的晶片 （如图 1A) 相比较， 使 用本发明的清洗液清洗后的金属表面 （如图 1B) 的缺陷率明显下降， 金属 表面的平坦度得到改善。
实施例 2 .
将含有 600 ppm聚丙烯酸（分子量为 30,000)、 500 ppm BTA (苯丙三唑） 和水为余量的清洗液（pH= .3 )清洗用化学机械抛光液抛光后的铝金属表面。
( 1 )化学机械抛光液抛光铝金属的工艺为：下压力 1 psi、抛光盘的转速 100 rpm、 抛光头转速 105 rpm、 清洗液流速 200 ml/min、 清洗时间 1 min; (2) 然后再分别用去离子水及聚乙烯醇（PVA)滚刷和该清冼液及 PVA滚刷对晶 片上的铝金属表面进行刷洗 1 min，滚刷转速为 100 rpm; (3 )再取出用去离 子水及 PVA滚刷刷洗 1 min。 清洗结果见图 2B。
结果显示， 用去离子水作清洗液清洗的晶片 （如图 2A) 表面的粗糙度 为 3.72A, 而使用本发明的清洗液清洗后的金属表面（如图 2B)的粗糙度为 3.00A, 金属表面点蚀明显下降， 金属表面的粗糙度得到改善。
实施例 3
将含有 1200 ppm聚丙烯酸（分子量为 30,000)， 500 ppmBTA和水为余 量的清洗液（pH=4.4)清洗用化学机械抛光液抛光后的晶片上的铝金属表面。
( 1 )化学机械抛光液抛光铝金属的工艺为：下压力 1 psi、抛光盘的转速 100 rpm、抛光头转速 105 rpm、清洗液流速 200 ml/min; (2)然后再分别用去离 子水及 PVA滚刷和该清冼液及 PVA滚刷对晶片上的铝金属表面进行刷洗 1 min， 滚刷转速为 lOO rpm; (3 )刷洗后静置于离子水中 30 min; (4)再取出 用去离子水及 PVA滚刷刷洗 1 min。
结果表明： 在步骤 （2) 中使用了本发明的含有金属防腐抑制剂的清冼 液可以有效的防止金属铝的腐蚀（见图 3A)， 而使用去离子水清洗的金属铝 上有大量的腐蚀 （见图 3B)。
实施例 4
将含有 1200 ppm聚丙烯酸（分子量为 10,000)， 500 ppm BTA和水为余 量的清洗液（pH=4.6)清洗化学机械抛光液抛光后的铝金属表面。 （1 )化学 机械抛光液抛光铝金属的工艺为： 下压力 l psi、 抛光盘的转速 100 rpm、 抛 光头转速 105 rpm、 清洗液流速 200 ml/min、 清洗时间 1 min; (2)然后再分 别用去离子水及 PVA滚刷和该清冼液及 PVA滚刷对晶片上的铝金属表面进 行刷洗 1 min， 滚刷转速为 100 rpm; (3 )再取出用去离子水及 PVA滚刷刷 洗 1 min。
实施例 5
将含有 25 ppm聚丙烯酸（分子量为 30,000)， 500 ppmBTA和水为余量 的清洗液（pH=3.0)清洗用化学机械抛光液抛光后的铝金属表面。 （1 )化学 机械抛光液抛光铝金属的工艺为： 下压力 l psi、 抛光盘的转速 100 rpm、 抛 光头转速 105 rpm. 清洗液流速 200 ml/min、 清洗时间 1 min (2) 然后再分 别用去离子水及 PVA滚刷和该清冼液及 PVA滚刷对晶片上的铝金属表面进 行刷洗 lmin,滚刷转速为 100 rpm; (3 )再取出用去离子水及 PVA滚刷刷洗 lmin。 将含有 lO ppm聚丙烯酸（分子量为 10，000)， 500 ppm BTA和水为余量 的清洗液（pH=3.0)清洗化学机械抛光液抛光后的铜金属表面。 （1 )化学机 械抛光液抛光铜金属的工艺为： 下压力 lpsi、 抛光盘的转速 100 rpm、 抛光 头转速 105 rpm、 清洗液流速 200 ml/min、清洗时间 1 min; (2)然后再分别 用去离子水及 PVA滚刷和该清冼液及 PVA滚刷对晶片上的铜金属表面进行 刷洗 1 min，滚刷转速为 100 rpm; (3 )再取出用去离子水及 PVA滚刷刷洗 1
Figure imgf000007_0001
实施例 Ί
将含有 20%聚丙烯酸（分子量为 10,000)， 500 ppm BTA和水为余量的 清洗液（pH=7.4)清洗化学机械抛光液抛光后的铜金属表面。 （1 )化学机械 抛光液抛光铜金属的工艺为： 下压力 lpsi、 抛光盘的转速 100 rpm, 抛光头 转速 105 rpm、清洗液流速 200 ml/min、清洗时间 1 min; (2)然后再分别用 去离子水及 PVA滚刷和该清冼液及 PVA滚刷对晶片上的铜金属表面进行刷 洗 1 min，滚刷转速为 100 rpm; (3 )再取出用去离子水及 PVA滚刷刷洗 lmin。

Claims

权利要求
1、 一种清洗液， 其包括至少一种载体， 其特征在于： 还包括一种金属 防腐抑制剂。
2、 根据权利要求 1所述的清洗液， 其特征在于： 所述的金属防腐抑制 剂为多聚羧酸和 /或其盐。
3、 根据权利要求 2所述的清洗液， 其特征在于： 所述的多聚羧酸为聚. 丙烯酸类化合物， 或者为丙烯酸类化合物与苯乙烯的共聚化合物， 或者为丙 烯酸类化合物与顺丁烯二酸酐的共聚化合物，或者为丙烯酸类化合物与丙烯 酸酯类的共聚化合物， 它们分子量在 2,000〜3,000,000之间。
4、 根据权利要求 2所述的清洗液， 其特征在于： 所述的多聚羧酸和 /或 其盐为式 I化合物-
Figure imgf000008_0001
-C一 C-
COORjn . τ
3 式 I
其中， 、 R2独自地为氢原子或碳原子数小于 3的烷基， 为11、 K、 Na或丽 4。
5、 根据权利要求 4所述的清洗液， 其特征在于： 所述的聚丙烯酸类化 合物为聚丙烯酸， 其分子量为 10,000〜30，000。
6、 根据权利要求 1所述的清洗液， 其特征在于： 还包括 pH调节剂。
7、 根据权利要求 1或 6所述的清洗液， 其特征在于： 还包括含氮杂环 化合物。
8、 根据权利要求 7所述的清洗液， 其特征在于： 所述的含氮杂环化合 物为苯并三唑、 吡唑和 /或咪唑。
9、 根据权利要求 1所述的清洗液， 其特征在于： 所述的载体为醇类和 / 或水。
10、 根据权利要求 1所述的清洗液， 其特征在于： 该金属防腐抑制剂的 质量浓度为 0.0001〜20%， 该载体为余量。
11、 如权利要求 1所述的清洗液在金属衬底中的用途， 其特征在于： 所 述的金属衬底为铝、 铜、 钽、 氮化钽、 钛、 氮化钛、 银或金。
PCT/CN2006/001701 2005-07-21 2006-07-17 Solution detergente et son utilisation WO2007009364A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200510027989.6 2005-07-21
CN200510027989.6A CN1900363B (zh) 2005-07-21 2005-07-21 清洗液及其用途

Publications (1)

Publication Number Publication Date
WO2007009364A1 true WO2007009364A1 (fr) 2007-01-25

Family

ID=37656342

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2006/001701 WO2007009364A1 (fr) 2005-07-21 2006-07-17 Solution detergente et son utilisation

Country Status (2)

Country Link
CN (1) CN1900363B (zh)
WO (1) WO2007009364A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024231684A1 (en) * 2023-05-11 2024-11-14 Innospec Limited Use, method and dishwashing composition for preventing or reducing corrosion and/or staining of a metallic surface in a cleaning process

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101290482A (zh) * 2007-04-19 2008-10-22 安集微电子（上海）有限公司 一种清洗等离子刻蚀残留物的清洗液
CN101412950A (zh) * 2007-10-19 2009-04-22 安集微电子（上海）有限公司 一种等离子刻蚀残留物清洗液
CN101424887A (zh) * 2007-11-02 2009-05-06 安集微电子（上海）有限公司 一种半导体晶圆金属基材腐蚀防护液及其使用方法
CN101842747B (zh) * 2007-11-02 2012-07-25 安集微电子（上海）有限公司 一种半导体晶圆金属基材腐蚀防护液及其使用方法
CN101614971B (zh) * 2008-06-27 2013-06-12 安集微电子（上海）有限公司 一种光刻胶清洗剂
CN102296294B (zh) * 2010-06-25 2016-01-20 安集微电子（上海）有限公司 一种金属腐蚀保护液及其应用
CN103882444A (zh) * 2012-12-19 2014-06-25 安集微电子（上海）有限公司 一种清洗液及其应用
CN104894575A (zh) * 2015-05-27 2015-09-09 南京科技职业学院 化工设备用脱脂剂

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1240821A (zh) * 1998-07-02 2000-01-12 株式会社日本触媒 洗涤剂助剂、它的制备方法和聚(甲基)丙烯酸(或盐)聚合物及其用途
JP2001185516A (ja) * 1999-12-24 2001-07-06 Kao Corp 研磨助剤
CN1405287A (zh) * 2001-09-07 2003-03-26 第一工业制药株式会社 非易燃性水系切削液组合物以及非易燃性水系切削液
CN1603395A (zh) * 2003-09-29 2005-04-06 中芯国际集成电路制造(上海)有限公司 半导体晶片的清洗液及清洗方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401807A (en) * 1992-10-08 1995-03-28 Rohm And Haas Company Process of increasing the molecular weight of water soluble acrylate polymers by chain combination
JP3039493B2 (ja) * 1997-11-28 2000-05-08 日本電気株式会社 基板の洗浄方法及び洗浄溶液
US6350560B1 (en) * 2000-08-07 2002-02-26 Shipley Company, L.L.C. Rinse composition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1240821A (zh) * 1998-07-02 2000-01-12 株式会社日本触媒 洗涤剂助剂、它的制备方法和聚(甲基)丙烯酸(或盐)聚合物及其用途
JP2001185516A (ja) * 1999-12-24 2001-07-06 Kao Corp 研磨助剤
CN1405287A (zh) * 2001-09-07 2003-03-26 第一工业制药株式会社 非易燃性水系切削液组合物以及非易燃性水系切削液
CN1603395A (zh) * 2003-09-29 2005-04-06 中芯国际集成电路制造(上海)有限公司 半导体晶片的清洗液及清洗方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024231684A1 (en) * 2023-05-11 2024-11-14 Innospec Limited Use, method and dishwashing composition for preventing or reducing corrosion and/or staining of a metallic surface in a cleaning process

Also Published As

Publication number Publication date
CN1900363A (zh) 2007-01-24
CN1900363B (zh) 2016-01-13

Similar Documents

Publication Publication Date Title
WO2007009364A1 (fr) Solution detergente et son utilisation
TWI576428B (zh) 銅鈍化之後段化學機械拋光清洗組成物及利用該組成物之方法
TWI726859B (zh) 後化學機械拋光配方及使用之方法
TWI617705B (zh) 銅腐蝕抑制系統
KR100867287B1 (ko) 세정제 조성물
TWI553116B (zh) 洗淨組合物、洗淨方法及半導體裝置之製造方法
CN101130876B (zh) 用于半导体制程中的金属防腐蚀清洗液
US20020132745A1 (en) Non-corrosive cleaning composition for removing plasma etching residues
TW200538544A (en) Alkaline post-chemical mechanical planarization cleaning compositions
US9058976B2 (en) Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof
WO2007009365A1 (fr) Liquide de polissage chimique mecanique
JP2002069495A (ja) 洗浄剤組成物
TW200300876A (en) Photoresist residue removing liquid composition
WO2011060616A1 (zh) 一种化学机械抛光液及其应用
WO2009021400A1 (fr) Composition de nettoyage pour retirer une réserve
US20020119245A1 (en) Method for etching electronic components containing tantalum
WO2011069345A1 (zh) 一种化学机械抛光浆料及其应用
WO2007048314A1 (fr) Pate d'abrasion chimique-mecanique pour cuivre
JP5122497B2 (ja) ハードディスク用基板用の洗浄剤組成物
JP4355201B2 (ja) タングステン金属除去液及びそれを用いたタングステン金属の除去方法
CN102108518B (zh) 一种金属防腐清洗液
CN102477359B (zh) 一种化学机械抛光清洗液
TWI394866B (zh) 積體電路晶片清洗液
CN101130877A (zh) 用于半导体制程中的金属防腐蚀保护液
JP2005206620A (ja) 洗浄剤

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06761445

Country of ref document: EP

Kind code of ref document: A1