WO2005121098A1 - Squarilium compound, photoelectric conversion material using same, photoelectric converter and photoelectrochemical cell - Google Patents
Squarilium compound, photoelectric conversion material using same, photoelectric converter and photoelectrochemical cell Download PDFInfo
- Publication number
- WO2005121098A1 WO2005121098A1 PCT/JP2005/010570 JP2005010570W WO2005121098A1 WO 2005121098 A1 WO2005121098 A1 WO 2005121098A1 JP 2005010570 W JP2005010570 W JP 2005010570W WO 2005121098 A1 WO2005121098 A1 WO 2005121098A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- ring
- substituent
- photoelectric conversion
- compound
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 63
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 44
- 239000000463 material Substances 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 18
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 16
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 8
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 8
- 230000002378 acidificating effect Effects 0.000 claims abstract description 4
- 125000000547 substituted alkyl group Chemical group 0.000 claims abstract description 4
- 125000005415 substituted alkoxy group Chemical group 0.000 claims abstract description 3
- 125000001424 substituent group Chemical group 0.000 claims description 24
- 125000000623 heterocyclic group Chemical group 0.000 claims description 16
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 125000005843 halogen group Chemical group 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 125000003107 substituted aryl group Chemical group 0.000 abstract 1
- 238000000034 method Methods 0.000 description 35
- 239000010409 thin film Substances 0.000 description 23
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 15
- 239000000975 dye Substances 0.000 description 13
- 239000002904 solvent Substances 0.000 description 13
- -1 pyridazi Ring Chemical group 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 8
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical group C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000004408 titanium dioxide Substances 0.000 description 7
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 125000003545 alkoxy group Chemical group 0.000 description 6
- 229910052740 iodine Inorganic materials 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- 125000004434 sulfur atom Chemical group 0.000 description 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 150000002484 inorganic compounds Chemical class 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011630 iodine Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical group C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 4
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 4
- 229910052794 bromium Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 239000008151 electrolyte solution Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000011245 gel electrolyte Substances 0.000 description 4
- 125000001041 indolyl group Chemical group 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 125000002911 monocyclic heterocycle group Chemical group 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- RUDATBOHQWOJDD-UHFFFAOYSA-N (3beta,5beta,7alpha)-3,7-Dihydroxycholan-24-oic acid Natural products OC1CC2CC(O)CCC2(C)C2C1C1CCC(C(CCC(O)=O)C)C1(C)CC2 RUDATBOHQWOJDD-UHFFFAOYSA-N 0.000 description 3
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000012327 Ruthenium complex Substances 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 125000002619 bicyclic group Chemical group 0.000 description 3
- RUDATBOHQWOJDD-BSWAIDMHSA-N chenodeoxycholic acid Chemical compound C([C@H]1C[C@H]2O)[C@H](O)CC[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H]([C@@H](CCC(O)=O)C)[C@@]2(C)CC1 RUDATBOHQWOJDD-BSWAIDMHSA-N 0.000 description 3
- 229960001091 chenodeoxycholic acid Drugs 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 125000002883 imidazolyl group Chemical group 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 125000001476 phosphono group Chemical group [H]OP(*)(=O)O[H] 0.000 description 3
- 125000003386 piperidinyl group Chemical group 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 125000003226 pyrazolyl group Chemical group 0.000 description 3
- 125000000168 pyrrolyl group Chemical group 0.000 description 3
- 239000007784 solid electrolyte Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 125000003039 tetrahydroisoquinolinyl group Chemical group C1(NCCC2=CC=CC=C12)* 0.000 description 3
- 125000000147 tetrahydroquinolinyl group Chemical group N1(CCCC2=CC=CC=C12)* 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- FQUYSHZXSKYCSY-UHFFFAOYSA-N 1,4-diazepane Chemical group C1CNCCNC1 FQUYSHZXSKYCSY-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- JBOIAZWJIACNJF-UHFFFAOYSA-N 1h-imidazole;hydroiodide Chemical class [I-].[NH2+]1C=CN=C1 JBOIAZWJIACNJF-UHFFFAOYSA-N 0.000 description 2
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 2
- UUIMDJFBHNDZOW-UHFFFAOYSA-N 2-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=CC=N1 UUIMDJFBHNDZOW-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical group C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000005456 alcohol based solvent Substances 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- ZSIQJIWKELUFRJ-UHFFFAOYSA-N azepane Chemical group C1CCCNCC1 ZSIQJIWKELUFRJ-UHFFFAOYSA-N 0.000 description 2
- 150000007514 bases Chemical class 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 150000007529 inorganic bases Chemical class 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 2
- 235000015497 potassium bicarbonate Nutrition 0.000 description 2
- 239000011736 potassium bicarbonate Substances 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 235000011181 potassium carbonates Nutrition 0.000 description 2
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 230000001235 sensitizing effect Effects 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 2
- 235000017557 sodium bicarbonate Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 2
- 125000004853 tetrahydropyridinyl group Chemical group N1(CCCC=C1)* 0.000 description 2
- BRNULMACUQOKMR-UHFFFAOYSA-N thiomorpholine Chemical group C1CSCCN1 BRNULMACUQOKMR-UHFFFAOYSA-N 0.000 description 2
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- 125000000355 1,3-benzoxazolyl group Chemical group O1C(=NC2=C1C=CC=C2)* 0.000 description 1
- FLBAYUMRQUHISI-UHFFFAOYSA-N 1,8-naphthyridine Chemical group N1=CC=CC2=CC=CN=C21 FLBAYUMRQUHISI-UHFFFAOYSA-N 0.000 description 1
- IQQRAVYLUAZUGX-UHFFFAOYSA-N 1-butyl-3-methylimidazolium Chemical compound CCCCN1C=C[N+](C)=C1 IQQRAVYLUAZUGX-UHFFFAOYSA-N 0.000 description 1
- VWUCIBOKNZGWLX-UHFFFAOYSA-N 1h-imidazol-1-ium;bromide Chemical class [Br-].C1=C[NH+]=CN1 VWUCIBOKNZGWLX-UHFFFAOYSA-N 0.000 description 1
- SCEIUGQQBYRBPP-UHFFFAOYSA-N 2,3,4,5-tetrahydro-1h-azepine Chemical group C1CCC=CNC1 SCEIUGQQBYRBPP-UHFFFAOYSA-N 0.000 description 1
- HBEDSQVIWPRPAY-UHFFFAOYSA-N 2,3-dihydrobenzofuran Chemical group C1=CC=C2OCCC2=C1 HBEDSQVIWPRPAY-UHFFFAOYSA-N 0.000 description 1
- JKFYKCYQEWQPTM-UHFFFAOYSA-N 2-azaniumyl-2-(4-fluorophenyl)acetate Chemical compound OC(=O)C(N)C1=CC=C(F)C=C1 JKFYKCYQEWQPTM-UHFFFAOYSA-N 0.000 description 1
- QKPVEISEHYYHRH-UHFFFAOYSA-N 2-methoxyacetonitrile Chemical compound COCC#N QKPVEISEHYYHRH-UHFFFAOYSA-N 0.000 description 1
- XWKFPIODWVPXLX-UHFFFAOYSA-N 2-methyl-5-methylpyridine Natural products CC1=CC=C(C)N=C1 XWKFPIODWVPXLX-UHFFFAOYSA-N 0.000 description 1
- 125000004493 2-methylbut-1-yl group Chemical group CC(C*)CC 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- VSWICNJIUPRZIK-UHFFFAOYSA-N 2-piperideine Chemical group C1CNC=CC1 VSWICNJIUPRZIK-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- SDDGNMXIOGQCCH-UHFFFAOYSA-N 3-fluoro-n,n-dimethylaniline Chemical compound CN(C)C1=CC=CC(F)=C1 SDDGNMXIOGQCCH-UHFFFAOYSA-N 0.000 description 1
- IMZSHPUSPMOODC-UHFFFAOYSA-N 5-oxo-1-phenyl-4h-pyrazole-3-carboxylic acid Chemical compound O=C1CC(C(=O)O)=NN1C1=CC=CC=C1 IMZSHPUSPMOODC-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical group N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- QRLQFXDMGNYSGY-UHFFFAOYSA-N CI(C=1NC=CN1)(CCC)C Chemical compound CI(C=1NC=CN1)(CCC)C QRLQFXDMGNYSGY-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical group C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910021612 Silver iodide Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical group C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003828 azulenyl group Chemical group 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical group C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WVMYSOZCZHQCSG-UHFFFAOYSA-N bis(sulfanylidene)zirconium Chemical compound S=[Zr]=S WVMYSOZCZHQCSG-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- NNLOHLDVJGPUFR-UHFFFAOYSA-L calcium;3,4,5,6-tetrahydroxy-2-oxohexanoate Chemical compound [Ca+2].OCC(O)C(O)C(O)C(=O)C([O-])=O.OCC(O)C(O)C(O)C(=O)C([O-])=O NNLOHLDVJGPUFR-UHFFFAOYSA-L 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 125000000259 cinnolinyl group Chemical group N1=NC(=CC2=CC=CC=C12)* 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- XXZXGDFLKRDJFP-UHFFFAOYSA-N copper;cyano thiocyanate Chemical compound [Cu].N#CSC#N XXZXGDFLKRDJFP-UHFFFAOYSA-N 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000010335 hydrothermal treatment Methods 0.000 description 1
- 230000003100 immobilizing effect Effects 0.000 description 1
- 125000003453 indazolyl group Chemical group N1N=C(C2=C1C=CC=C2)* 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- 125000003387 indolinyl group Chemical group N1(CCC2=CC=CC=C12)* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000000904 isoindolyl group Chemical group C=1(NC=C2C=CC=CC12)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- XIXADJRWDQXREU-UHFFFAOYSA-M lithium acetate Chemical compound [Li+].CC([O-])=O XIXADJRWDQXREU-UHFFFAOYSA-M 0.000 description 1
- MHCFAGZWMAWTNR-UHFFFAOYSA-M lithium perchlorate Chemical compound [Li+].[O-]Cl(=O)(=O)=O MHCFAGZWMAWTNR-UHFFFAOYSA-M 0.000 description 1
- 229910001486 lithium perchlorate Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000004923 naphthylmethyl group Chemical group C1(=CC=CC2=CC=CC=C12)C* 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000002971 oxazolyl group Chemical group 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- WEYVCQFUGFRXOM-UHFFFAOYSA-N perazine Chemical group C1CN(C)CCN1CCCN1C2=CC=CC=C2SC2=CC=CC=C21 WEYVCQFUGFRXOM-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000004344 phenylpropyl group Chemical group 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- LFSXCDWNBUNEEM-UHFFFAOYSA-N phthalazine Chemical group C1=NN=CC2=CC=CC=C21 LFSXCDWNBUNEEM-UHFFFAOYSA-N 0.000 description 1
- 125000004193 piperazinyl group Chemical group 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229960003975 potassium Drugs 0.000 description 1
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000001422 pyrrolinyl group Chemical group 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- HQASLXJEKYYFNY-UHFFFAOYSA-N selenium(2-);titanium(4+) Chemical compound [Ti+4].[Se-2].[Se-2] HQASLXJEKYYFNY-UHFFFAOYSA-N 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- 229940045105 silver iodide Drugs 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- PWEBUXCTKOWPCW-UHFFFAOYSA-N squaric acid Chemical class OC1=C(O)C(=O)C1=O PWEBUXCTKOWPCW-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- RCYJPSGNXVLIBO-UHFFFAOYSA-N sulfanylidenetitanium Chemical compound [S].[Ti] RCYJPSGNXVLIBO-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- FAWYJKSBSAKOFP-UHFFFAOYSA-N tantalum(iv) sulfide Chemical compound S=[Ta]=S FAWYJKSBSAKOFP-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003536 tetrazoles Chemical group 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 125000001425 triazolyl group Chemical group 0.000 description 1
- QLHCYPWYDGVVPA-UHFFFAOYSA-N triethylazanium;thiocyanate Chemical compound SC#N.CCN(CC)CC QLHCYPWYDGVVPA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D231/00—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings
- C07D231/02—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings
- C07D231/10—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members
- C07D231/14—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D231/18—One oxygen or sulfur atom
- C07D231/20—One oxygen atom attached in position 3 or 5
- C07D231/22—One oxygen atom attached in position 3 or 5 with aryl radicals attached to ring nitrogen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B57/00—Other synthetic dyes of known constitution
- C09B57/007—Squaraine dyes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/652—Cyanine dyes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Definitions
- the present invention relates to a squarylium compound that can be used for a photoelectric conversion element, a photoelectrochemical cell using the squarylium compound, and the like.
- This battery is a wet solar battery using a ruthenium complex as a photosensitizer and a titanium dioxide porous thin film as a working electrode (see, for example, Patent Document 1 and Non-Patent Document 1).
- a ruthenium complex of the sensitizing dye is expensive, development of a photoelectric conversion element that is sensitized by an inexpensive organic dye is desired.
- Patent Document 1 U.S. Pat.No. 4,927,721
- Patent Document 2 JP-A-11 86916
- Patent Document 3 Specification of European Patent No. 911841
- Patent Document 4 Japanese Patent Laid-Open No. 2001-76773
- Non-Patent Document 1 “Nature”, 1991, No. 353, ⁇ ⁇ 737-740 Disclosure of Invention
- An object of the present invention is to provide a squarylium compound that can be used for a photoelectric conversion element that is inexpensive and has high energy conversion efficiency, a photoelectrochemical cell using the same, etc. Means for Solving the Problems
- the present invention provides the following [1] to [5].
- R 1 and R 2 are the same or different and are each a hydrogen atom, an alkyl group optionally having a substituent, a substituent having a substituent, an atom group, an aryl group or Having a substituent, a force representing a radical aralkyl group, R 1 and R 2 together with the adjacent nitrogen atom form an optionally substituted heterocyclic ring;
- R 3 , R 5 and R 6 are the same or different and represent a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkoxy group, a hydroxy group, or a halogen atom, R 1 and R 3 , or R 2 and R 4 may be combined with adjacent N—C—C to form an optionally substituted heterocycle
- R 7 is hydrogen An atom, an alkyl group which may have a substituent, a group having a substituent, a group having a substituent, an aralkyl group, a group having a substituent, a group having a substitu
- a photoelectrochemical cell comprising the photoelectric conversion element according to [4].
- squarylium compound represented by the general formula (I) may be expressed as squarylium compound (I). The same applies to the compounds of other formula numbers.
- a squarylium compound that can be used in a photoelectric conversion element having low cost and high energy conversion efficiency, a photoelectrochemical cell using the squarylium compound, and the like are provided.
- examples of the alkyl moiety in the alkyl group and the alkoxyl group include a linear or branched alkyl group having 1 to 6 carbon atoms or a cyclic group having 3 to 8 carbon atoms. Specific examples thereof include methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, sec-butyl group, tert-butyl group, pentyl group, isopentyl group, 1-methylbutyl group.
- aralkyl group examples include aralkyl groups having 7 to 15 carbon atoms, and specific examples thereof include a benzyl group, a phenethyl group, a phenylpropyl group, and a naphthylmethyl group.
- aryl group examples include aryl groups having 6 to 14 carbon atoms, and specific examples thereof include a phenyl group, a naphthyl group, an anthryl group, and an azulenyl group.
- halogen atom examples include a chlorine atom, a bromine atom, a fluorine atom, and an iodine atom.
- heterocyclic ring in the heterocyclic group examples include, for example, a 5-membered or 6-membered monocyclic aromatic or aliphatic heterocyclic ring containing at least one atom selected from a nitrogen atom, an oxygen atom, and a sulfur atom, and 3 to 8 members.
- heterocyclic ring in the heterocyclic group examples include condensed bicyclic or tricyclic condensed rings containing at least one atom selected from a nitrogen atom, an oxygen atom and a sulfur atom, and specific examples thereof.
- the heterocycle formed by combining R 1 and R 2 with the adjacent nitrogen atom includes, for example, a 5-membered or 6-membered monocyclic heterocycle containing at least one nitrogen atom
- a monocyclic heterocycle may contain other nitrogen, oxygen or sulfur atoms), a bicyclic or tricyclic condensed 3- to 8-membered ring and containing at least one nitrogen atom.
- Cyclic heterocyclic rings (the condensed heterocyclic rings may contain other nitrogen, oxygen or sulfur atoms), and specific examples thereof include pyrrolidine ring, piperidine ring, piperidine ring, and the like.
- the heterocyclic ring formed by combining R 1 and R 3 , or R 2 and R 4 together with adjacent N—C—C includes, for example, a 5-membered structure containing at least one nitrogen atom Or a 6-membered monocyclic heterocycle (this monocyclic heterocycle may contain other nitrogen, oxygen or sulfur atoms), a bicyclic or tricyclic condensed 3- to 8-membered ring Specific examples of the condensed heterocyclic ring containing at least one nitrogen atom (the condensed heterocyclic ring may contain other nitrogen atom, oxygen atom or sulfur atom).
- a pyrroline ring 1, 2, 3, 4-tetrahydropyridine ring, 1, 2, 3, 4-tetrahydrovirazine ring, 2, 3-dihydronozole.
- Examples include raoxazine ring, 2,3-dihydro-1,4_thiazine ring, tetrahydroazepine ring, tetrahydrazepine ring, tetrahydroquinoline ring, tetrahydroisoquinoline ring, pyrrole ring, imidazole ring, pyrazole ring, indole ring and the like.
- an aralkyl group, an aryl group, a heterocyclic group, a heterocyclic ring formed by combining R 1 and R 2 with an adjacent nitrogen atom, and R 1 and, or R 2 and R 4 are adjacent to each other
- substituent of the heterocyclic ring formed together with N—C—C include the same or different 1 to 5 substituents, specifically, hydroxyl group, carboxyl group, phosphono A group, a snorejo group, a halogen atom, an anolenoquinole group, an alkoxyl group, a nitro group, an alkyl-substituted or unsubstituted amino group, and the like.
- a halogen atom, an alkyl group, and an alkoxy group are as defined above, and an alkyl portion of the alkyl-substituted amino group is as defined above.
- Examples of the substituent of the alkyl group and alkoxyl group are the same or different:! To 3 substituents, specifically, a hydroxyl group, a carboxyl group, a phosphono group, a sulfo group, a halogen atom, an alkoxyl Group and the like.
- the halogen atom and the alkoxyl group have the same meanings as described above.
- An acidic group refers to a group having a hydrogen atom that can be dissociated, and examples thereof include a carboxyleno group, a hydroxyl group, a phosphono group, and a sulfo group. These groups may form salts with alkali metal ions, ammonium ions, organic ammonium ions, etc. Moreover, it may form an intramolecular complex salt. Examples of alkali metals in alkali metal ions include lithium, sodium, and potassium. Organic ammonium In organic ions, tetraptylammonium and the like can be mentioned.
- the squarylium compound (I) is produced by a known method (WO01 / 44233 or the like) or a method equivalent thereto.
- WO01 / 44233 or the like a known method
- this invention is not limited to this.
- R, R 2 , R 3 , A and X are each as defined above, W is a halogen atom such as chlorine or bromine, or OR 8 (wherein R 8 represents an alkyl group as defined above)]
- Compound (IV) is obtained by reacting Compound (II) with 1 to 2 moles of Compound (III) in the presence of 1 to 2 moles of a base in a solvent at 0 to 40 ° C for 1 to 20 hours. Can be obtained.
- Examples of the solvent include halogenated hydrocarbons such as chloroform, dichloromethane, 1,2-dichloroethane, ethers such as jetyl ether and tert-butyl methyl ether, and aromatics such as toluene and benzene.
- halogenated hydrocarbons such as chloroform, dichloromethane, 1,2-dichloroethane
- ethers such as jetyl ether and tert-butyl methyl ether
- aromatics such as toluene and benzene.
- hydrocarbons methanol, alcohols such as ethanol and propanol, tetrahydrofuran, ethyl acetate, dimethylformamide, and dimethylsulfoxide (DMSO).
- DMSO dimethylsulfoxide
- an organic base such as quinoline, triethylamine, pyridine or the like
- an inorganic base such as potassium carbonate, potassium hydrogen carbonate, sodium carbonate, sodium hydrogen carbonate, potassium hydroxide, sodium hydroxide or the like
- Compound (III) can be obtained, for example, as a commercial product.
- Compound (V) is compound (IV) in 50-90% by volume aqueous acetic acid solution, 90-: 120 ° C. for 0.7: -7 hours, or 50-99% by weight trifluoroacetic acid aqueous solution, It can be obtained by treating at 45 to 50 ° C for 0.:! To 3 hours.
- Compound (I) is compound (V):! ⁇ 2 times mole of compound (VI), optionally in the presence of 1 ⁇ 2 times mole of base, in solvent, 80 ⁇ : 120 ° C 1 to: obtained by reacting for 15 hours.
- Examples of the solvent include only alcohol solvents having 2 to 8 carbon atoms such as ethanol, propanol, isopropyl alcohol, butanol, and octanol, or a mixed solvent (alcohol 40) of the alcohol solvent and benzene or toluene. Volume% or more) is used.
- Examples of the base include organic bases such as quinoline, triethylamine, and pyridine, and inorganic bases such as potassium carbonate, potassium bicarbonate, and sodium bicarbonate.
- Compound (VI) can be produced by a known method (WO01 / 4437 or the like) or according thereto.
- the compound (I) is further purified by a method usually used in organic synthetic chemistry (column chromatography, recrystallization, washing with a solvent, etc.), if necessary, by evaporating or filtering the solvent. Thus, it can be isolated and purified.
- the photoelectric conversion element of the present invention is composed of a conductive support, a semiconductor thin film electrode made of a semiconductor sensitized by the squaric compound (I) placed on the conductive support, a charge transfer layer, a counter electrode, and the like.
- the photoelectrochemical cell according to the present invention is one in which this photoelectric conversion element can be used for a battery used for work in an external circuit. That is, the photoelectrochemical cell of the present invention is such that an external circuit connected to the conductive support and the counter electrode of the photoelectric conversion element of the present invention via a lead works.
- the photoelectrochemical cell is preferably sealed on the side with a polymer, an adhesive or the like in order to prevent deterioration of the constituents and volatilization of the electrolyte used for the charge transfer layer.
- the semiconductor used for the photoelectric conversion material is a so-called photoconductor, which absorbs light and separates charges to generate electrons and holes.
- semiconductors sensitized by squarylium compound (I) light absorption and the generation of electrons and holes due to this are mainly due to squarylium compound (I).
- the semiconductor is responsible for receiving and transmitting these electrons.
- the semiconductor is not particularly limited, but for example, a simple substance such as titanium oxide, indium oxide, tin oxide, bismuth oxide, zirconium oxide, tantalum oxide, niobium oxide, tandasten oxide, iron oxide, gallium oxide, nickel oxide or the like.
- Semiconductor thin films can be manufactured using the semiconductors listed above, which are preferably compound semiconductors having nanoporous structures composed of nanoparticles [Journal of American 'Ceramic' Society (Journal of American Ceramic Society) ", 1997, No. 80, No. 12, p. 3157].
- the semiconductor thin film electrode used in the photoelectric conversion element of the present invention is prepared, for example, by preparing a transparent electrode as a conductive support, laminating a semiconductor thin film thereon, and forming the squarylium compound ( It can be produced by adsorbing I).
- the transparent electrode is not particularly limited as long as it has conductivity.
- a transparent or translucent glass substrate or plastic plate for example, fluorine or antimony-doped oxide oxide, tin-doped indium oxide, zinc oxide, etc.
- Those coated with a conductive transparent oxide semiconductor thin film, preferably those coated with a fluorine-doped tin oxide thin film are used.
- Examples of the method of placing the compound semiconductor on the conductive support include a method of applying a dispersion or colloidal solution of the compound semiconductor on the conductive support.
- Examples of the application method include a roller method, a dip method, an air knife method, a blade method, a spin method, and a spray method.
- Compound semiconductors are used to electronically contact semiconductor fine particles after being applied to a conductive support, and to improve coating film strength and adhesion to the support.
- a preferable heat treatment temperature range is 100 to 600 ° C.
- the heat treatment time is 10 minutes to 10 hours.
- a method of irradiating a microwave of about 28 GHz after applying a dispersion or colloidal solution on a conductive support is used.
- the film thickness of the semiconductor thin film is preferably 0.1 to 100 / im, more preferably 2 to 25 / im.
- the adsorption of the squarylium compound (I) onto the semiconductor thin film is performed by immersing the semiconductor thin film coated on the support in the squarylium compound (I) solution, and at room temperature for 1 minute to 2 days, or under heating conditions. It can be performed by leaving it for 1 minute to 24 hours.
- the solvent used when the squarylium compound (I) is adsorbed on the semiconductor thin film is not particularly limited as long as it is a solvent that dissolves the squarylium compound (I).
- alcohol solvents such as methanol and ethanol, benzene and the like
- Hydrocarbon solvents organic solvents such as tetrahydrofuran and acetonitrile, and the like, and mixed solvents thereof are preferable.
- the concentration of the squarylium compound (I) solution is preferably not less than 0.1 Olmmol / 1, and 0.1 to 1.0 mmolZl. More preferred.
- the squarylium compound (I) and known dyes such as ruthenium complex dyes, other organic dyes (for example, a polymethine dye) may be used in combination.
- a steroid compound having a carboxynole group for example, chenodeoxycholic acid
- a steroid compound having a carboxynole group for example, chenodeoxycholic acid
- the charge transfer layer is a layer having a function of replenishing electrons to the oxidant of the squarylium compound (I).
- squarylium compound (I) that absorbs light emits electrons by sensitization, Converted to oxidant.
- Examples of the charge transfer layer used in the photoelectric conversion element of the present invention include a liquid (electrolytic solution) obtained by dissolving a redoxion pair in an organic solvent, a gel electrolyte obtained by impregnating a polymer in a liquid obtained by dissolving a redox ion pair in an organic solvent, Examples thereof include a molten salt containing a redox ion pair, a solid electrolyte, an inorganic compound semiconductor, and an organic hole transport material.
- the redox ion pair includes, for example, iodine redox, bromine redox, iron redox, tin redox, chromium redox, vanadium redox, sulfide ion redox, anthraquinone redox, and the like.
- iodine redox includes imidazolium iodide derivatives, lithium iodide, potassium iodide, tetraalkylammonium iodide and iodine mixtures
- bromine redox includes imidazolium bromide derivatives.
- the organic solvent that dissolves the redox ion pair is not limited as long as it is a stable solvent that dissolves the redox ion pair.
- organic solvents such as carbonate, propylene carbonate, dimethyl sulfoxide, dimethylformamide, tetrahydrofuran, and nitromethane. It is preferable to use a mixed solvent thereof.
- Etc The concentration of the redox ion pair in the electrolytic solution is preferably 0.01 to 5. Omol / 1, more preferably 0.05 to 1. Omol / 1.
- the electrolytic solution may contain a basic compound such as tert-butylpyridine, 2_picoline, 2,6-lutidine.
- concentration of the basic compound is preferably 0.01 to 5. Omol / 1 More preferably, 0 ⁇ 1 to: ⁇ ⁇ Omol / 1.
- Examples of the polymer used for the gel electrolyte include polyacrylonitrile and polyvinylidene fluoride.
- Examples of the molten salt include 1_butyl_3_methylpyridinum-mouldide, 1_butyl_3-methylimidazolium mouldide, lithium iodide, lithium acetate, and lithium perchlorate.
- Examples thereof include thium salts, and the fluidity at room temperature may be improved by mixing a polymer such as polyethylene oxide with these.
- solid electrolyte examples include polymers such as polyethylene oxide derivatives.
- Examples of the inorganic compound semiconductor include copper iodide, copper bromide, and copper thiocyanide.
- the inorganic compound semiconductor may contain a molten salt such as triethyl ammonium thiocyanate.
- organic hole transport material examples include polythiophene derivatives and polypyrrole derivatives.
- a titanium dioxide thin film may be applied as an undercoat layer (short-circuit prevention layer) using a technique such as spray pyrolysis to prevent a short circuit.
- charge transfer layer There are two methods for forming the charge transfer layer, and one is that a counter electrode is first bonded to a semiconductor thin film electrode on which a dye is adsorbed, and a liquid charge transfer layer is injected into the gap. It is a method to do. The other is a method in which a charge transfer layer is directly applied to a semiconductor thin film electrode, and a counter electrode is subsequently applied.
- a normal pressure process utilizing capillary action and a vacuum process in which the gas phase is replaced with a liquid phase at a pressure lower than normal pressure can be used.
- a counter electrode is provided without being dried, and measures for preventing liquid leakage at the edge are also taken.
- a gel electrolyte there is a method of applying it wet and immobilizing it by a method such as polymerization. In that case, the electrode can be applied after drying and immobilization.
- the method for applying the electrolyte, wet organic hole transport material or gel electrolyte is the same as that for applying the semiconductor thin film electrode and the dye, dipping method, roller method, dipping method, air knife method, blade method, spin method. Law, spray method, etc. it can.
- a solid electrolyte, an inorganic compound semiconductor, or a solid organic hole transport material a solution obtained by dissolving them in a solvent or the like is dropped onto a heated semiconductor thin film electrode and dried by vaporizing the solvent on the semiconductor thin film electrode.
- a counter electrode can be applied after the charge transfer layer is formed by forming a solidified charge transfer layer, or by forming a charge transfer layer by a dry film forming process such as a vacuum deposition method or a CVD method (chemical vapor deposition method).
- Examples of the counter electrode used in the photoelectric conversion element of the present invention include platinum, rhodium, ruthenium, carbon, oxide semiconductor electrode and the like coated in a thin film on a conductive substrate. Platinum, carbon electrodes and the like coated in a thin film on a conductive substrate are preferred.
- the photoelectric conversion element of the present invention there is no limitation as long as it prevents contact between the semiconductor thin film electrode and the counter electrode, which may use a spacer, but for example, a polymer film such as polyethylene is used. .
- the squarylium compound (I) used in the present invention is inexpensive.
- Titanium dioxide paste manufactured by Solaronix, SA
- transparent conductive glass manufactured by Nippon Sheet Glass, surface resistance is about 15 ⁇ / cm 2
- Ti-Nanoxide T was applied using a glass rod, dried at room temperature for 30 minutes, and then baked in an electric furnace at 450 ° C for 30 minutes. The thickness of titanium dioxide was 10 ⁇ . After removing the glass and cooling, it was added to the acetonitrile solution (compound (1) 0.1 mmol / l, chenodeoxycholic acid 10 mmol / l) mixed with compound (1) and chenodeoxycholic acid at 75 ° C. Soaked for 30 minutes. The glass adsorbed with the dye was washed with acetonitrile and allowed to air dry.
- the titanium dioxide electrode substrate (lcm X 3cm) prepared as described above was superposed on a platinum-deposited glass of the same size.
- an electrolyte solution iodine 0.05 mol / l, lithium iodide 0.1 mol / 1, dimethylpropylimidazolyl iodine 0.62 molZl and tert-butyl pyridine 0.5 mol / l acetonitrile solution
- a photoelectrochemical cell was obtained by impregnating with a titanium dioxide electrode and introducing it between the titanium dioxide electrode and the counter electrode.
- This photoelectrochemical cell was irradiated with 100 mW / cm 2 of artificial sunlight using a 500 W xenon short arc lamp (manufactured by Usio Electric), and its characteristics were evaluated with an IV curve tracer (manufactured by Eihiro Seiki).
- the characteristics of the obtained photoelectrochemical cell were as follows: short-circuit current density 6.7 mA / cm 2 , open-circuit voltage 0.66 V, form factor (fill factor) 0.59, and energy conversion efficiency 2.5%. .
- a squarylium compound that can be used in a photoelectric conversion element having low cost and high energy conversion efficiency, a photoelectrochemical cell using the squarylium compound, and the like are provided.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hybrid Cells (AREA)
Abstract
Description
明 細 書 Specification
スクァリリウム化合物ならびにこれを用いた光電変換材料、光電変換素子 および光電気化学電池 SQUARYLIUM COMPOUND AND PHOTOELECTRIC CONVERSION MATERIAL, PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTROCHEMICAL CELL
技術分野 Technical field
[0001] 本発明は、光電変換素子に使用できるスクァリリウム化合物、それを用いた光電気 化学電池等に関する。 背景技術 The present invention relates to a squarylium compound that can be used for a photoelectric conversion element, a photoelectrochemical cell using the squarylium compound, and the like. Background art
[0002] 太陽光発電においては単結晶シリコン太陽電池、多結晶シリコン太陽電池、ァモル ファスシリコン太陽電池等の太陽電池が実用化もしくは主な研究開発の対象となって いるが、普及させる上で製造コスト、原材料確保等の問題点を克服する必要がある。 一方、フィルム化や低価格化を指向した有機材料を用いた太陽電池もこれまでに多 く提案されているが、エネルギー変換効率が低ぐ耐久性も悪いという問題があった。 こうした状況の中で、色素によって増感された半導体薄膜電極を用いた光電変換素 子および光電気化学電池、ならびにこれらを作成するための材料および製造技術が 知られている。この電池はルテニウム錯体を光増感剤とし、二酸化チタン多孔質薄膜 を作用電極とする湿式太陽電池である (例えば、特許文献 1、非特許文献 1参照)。し 力、しながら、増感色素のルテニウム錯体が高価なことから、安価な有機色素によって 増感される光電変換素子の開発が望まれている。 [0002] In solar power generation, solar cells such as single crystal silicon solar cells, polycrystalline silicon solar cells, amorphous silicon solar cells, etc. have been put into practical use or have been the subject of major research and development. It is necessary to overcome problems such as cost and securing raw materials. On the other hand, many solar cells using organic materials aimed at film formation and cost reduction have been proposed so far, but there is a problem that the energy conversion efficiency is low and the durability is poor. Under such circumstances, photoelectric conversion elements and photoelectrochemical cells using semiconductor thin film electrodes sensitized with a dye, and materials and manufacturing techniques for producing them are known. This battery is a wet solar battery using a ruthenium complex as a photosensitizer and a titanium dioxide porous thin film as a working electrode (see, for example, Patent Document 1 and Non-Patent Document 1). However, since the ruthenium complex of the sensitizing dye is expensive, development of a photoelectric conversion element that is sensitized by an inexpensive organic dye is desired.
[0003] また、増感色素として有機色素を用いる試みも行われている力 エネルギー変換効 率が低い等の問題があり、実用上満足されるものではない(例えば、特許文献 2、特 許文献 3参照)。 [0003] In addition, attempts to use organic dyes as sensitizing dyes have been problematic, such as low power-energy conversion efficiency, and are not satisfactory in practice (for example, Patent Document 2, Patent Document) 3).
また、スクアリン酸誘導体を光電変換素子に使用することが知られている(例えば、 特許文献 4参照)。 In addition, it is known to use a squaric acid derivative for a photoelectric conversion element (see, for example, Patent Document 4).
特許文献 1 :米国特許第 4927721号明細書 Patent Document 1: U.S. Pat.No. 4,927,721
特許文献 2:特開平 11 86916号公報 Patent Document 2: JP-A-11 86916
特許文献 3 :欧州特許第 911841号明細書 Patent Document 3: Specification of European Patent No. 911841
特許文献 4 :特開 2001— 76773号公報 非特許文献 1:「ネイチヤー(Nature)」、 1991年、第 353卷、 ρ· 737— 740 発明の開示 Patent Document 4: Japanese Patent Laid-Open No. 2001-76773 Non-Patent Document 1: “Nature”, 1991, No. 353, ρ · 737-740 Disclosure of Invention
発明が解決しょうとする課題 Problems to be solved by the invention
[0004] 本発明の目的は、安価かつ高いエネルギー変換効率を有する光電変換素子に使 用できるスクァリリウム化合物、それを用いた光電気化学電池等を提供することである 課題を解決するための手段 [0004] An object of the present invention is to provide a squarylium compound that can be used for a photoelectric conversion element that is inexpensive and has high energy conversion efficiency, a photoelectrochemical cell using the same, etc. Means for Solving the Problems
[0005] 本発明は、以下の [1]〜[5]を提供する。 [0005] The present invention provides the following [1] to [5].
[1] 一般式 (I) [1] General formula (I)
[0006] [化 1] [0006] [Chemical 1]
[0007] [式中、 R1および R2は同一または異なって、水素原子、置換基を有していてもよいァ ルキル基、置換基を有してレ、てもよレ、ァリール基または置換基を有してレ、てもよレヽァ ラルキル基を表す力、、 R1および R2が隣接する窒素原子と一緒になつて置換基を有し ていてもよい複素環を形成し、 R3、 R5および R6は同一または異なって、水素原 子、置換基を有していてもよいアルキル基、置換基を有していてもよいアルコキシノレ 基、ヒドロキシノレ基、またはハロゲン原子を表し、 R1および R3、または R2および R4は それぞれが隣接する N— C— Cと一緒になつて、置換基を有していてもよい複素環を 形成してもよぐ R7は水素原子、置換基を有していてもよいアルキル基、置換基を有 してレ、てもよレ、ァラルキル基、置換基を有してレ、てもよレ、ァリール基または置換基を 有していてもよい複素環基を表し、 Xは窒素原子または酸素原子を表し (ただし、 Xが 酸素原子である場合、 R7は存在しない)、 Aは酸性基を表す]で表されるスクァリリウ ム化合物。 [In the formula, R 1 and R 2 are the same or different and are each a hydrogen atom, an alkyl group optionally having a substituent, a substituent having a substituent, an atom group, an aryl group or Having a substituent, a force representing a radical aralkyl group, R 1 and R 2 together with the adjacent nitrogen atom form an optionally substituted heterocyclic ring; R 3 , R 5 and R 6 are the same or different and represent a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkoxy group, a hydroxy group, or a halogen atom, R 1 and R 3 , or R 2 and R 4 may be combined with adjacent N—C—C to form an optionally substituted heterocycle R 7 is hydrogen An atom, an alkyl group which may have a substituent, a group having a substituent, a group having a substituent, an aralkyl group, a group having a substituent, a group having a substituent, a group having a aryl group or a substituent; X represents a nitrogen atom or an oxygen atom (provided that when X is an oxygen atom, R 7 does not exist), and A represents an acidic group]. Compounds.
[2] Xが窒素原子である [1]記載のスクァリリウム化合物。 [3] [1]または [2]記載のスクァリリウム化合物と半導体とを含む光電変換材料。 [2] The squarylium compound according to [1], wherein X is a nitrogen atom. [3] A photoelectric conversion material comprising the squarylium compound according to [1] or [2] and a semiconductor.
[4] [3]記載の光電変換材料を用いた光電変換素子。 [4] A photoelectric conversion element using the photoelectric conversion material according to [3].
[5] [4]記載の光電変換素子を含有する光電気化学電池。 [5] A photoelectrochemical cell comprising the photoelectric conversion element according to [4].
[0008] 以下、一般式 (I)で表されるスクァリリウム化合物をスクァリリウム化合物(I)と表現す ることもある。他の式番号の化合物についても同様である。 Hereinafter, the squarylium compound represented by the general formula (I) may be expressed as squarylium compound (I). The same applies to the compounds of other formula numbers.
発明の効果 The invention's effect
[0009] 本発明により、安価かつ高いエネルギー変換効率を有する光電変換素子に使用で きるスクァリリウム化合物、それを用いた光電気化学電池等が提供される。 [0009] According to the present invention, a squarylium compound that can be used in a photoelectric conversion element having low cost and high energy conversion efficiency, a photoelectrochemical cell using the squarylium compound, and the like are provided.
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
[0010] 前記の一般式における各基の定義において、アルキル基およびアルコキシル基に おけるアルキル部分としては、例えば、直鎖または分岐状の炭素数 1〜6のアルキル 基または炭素数 3〜8の環状アルキル基があげられ、その具体例としては、メチル基 、ェチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、 sec—ブチル基、 tert—ブチル基、ペンチル基、イソペンチル基、 1一メチルブチル基、 2—メチルブチ ル基、 tert—ペンチル基、へキシル基、シクロプロピル基、シクロブチル基、シクロべ ンチル基、シクロへキシル基、シクロへプチル基、シクロォクチル基等があげられる。 [0010] In the definition of each group in the above general formula, examples of the alkyl moiety in the alkyl group and the alkoxyl group include a linear or branched alkyl group having 1 to 6 carbon atoms or a cyclic group having 3 to 8 carbon atoms. Specific examples thereof include methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, sec-butyl group, tert-butyl group, pentyl group, isopentyl group, 1-methylbutyl group. 2-methylbutyl group, tert-pentyl group, hexyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group and the like.
[0011] ァラルキル基としては、例えば、炭素数 7〜: 15のァラルキル基があげられ、その具 体例としては、ベンジル基、フエネチル基、フエニルプロピル基、ナフチルメチル基等 があげられる。 Examples of the aralkyl group include aralkyl groups having 7 to 15 carbon atoms, and specific examples thereof include a benzyl group, a phenethyl group, a phenylpropyl group, and a naphthylmethyl group.
ァリール基としては、例えば、炭素数 6〜: 14のァリール基があげられ、その具体例と しては、フエニル基、ナフチル基、アントリル基、ァズレニル基等があげられる。 Examples of the aryl group include aryl groups having 6 to 14 carbon atoms, and specific examples thereof include a phenyl group, a naphthyl group, an anthryl group, and an azulenyl group.
[0012] ハロゲン原子としては、塩素原子、臭素原子、フッ素原子およびヨウ素原子があげ られる。 [0012] Examples of the halogen atom include a chlorine atom, a bromine atom, a fluorine atom, and an iodine atom.
複素環基における複素環としては、例えば、窒素原子、酸素原子および硫黄原子 力 選ばれる少なくとも 1個の原子を含む 5員または 6員の単環性芳香族または脂肪 族複素環、 3〜8員の環が縮合した二環または三環性で窒素原子、酸素原子および 硫黄原子から選ばれる少なくとも 1個の原子を含む縮環性芳香族または脂肪族複素 環等があげられ、その具体例としては、ピリジン環、ピラジン環、ピリミジン環、ピリダジ ン環、キノリン環、イソキノリン環、フタラジン環、キナゾリン環、キノキサリン環、ナフチ リジン環、シンノリン環、ピロール環、ピラゾール環、イミダゾール環、トリァゾール環、 テトラゾール環、チォフェン環、フラン環、チアゾール環、ォキサゾール環、インドール 環、イソインドール環、インダゾール環、ベンゾイミダゾール環、ベンゾトリアゾール環 、ベンゾチアゾール環、ベンゾォキサゾール環、プリン環、力ルバゾール環、ピロリジ ン環、ピぺリジン環、ピぺラジン環、モノレホリン環、チオモルホリン環、ホモピぺリジン 環、ホモピぺラジン環、テトラヒドロピリジン環、テトラヒドロキノリン環、テトラヒドロイソキ ノリン環、テトラヒドロフラン環、テトラヒドロピラン環、ジヒドロべンゾフラン環、テトラヒド ロカルバゾール環等があげられる。 Examples of the heterocyclic ring in the heterocyclic group include, for example, a 5-membered or 6-membered monocyclic aromatic or aliphatic heterocyclic ring containing at least one atom selected from a nitrogen atom, an oxygen atom, and a sulfur atom, and 3 to 8 members. Examples thereof include condensed bicyclic or tricyclic condensed rings containing at least one atom selected from a nitrogen atom, an oxygen atom and a sulfur atom, and specific examples thereof. , Pyridine ring, pyrazine ring, pyrimidine ring, pyridazi Ring, quinoline ring, isoquinoline ring, phthalazine ring, quinazoline ring, quinoxaline ring, naphthyridine ring, cinnoline ring, pyrrole ring, pyrazole ring, imidazole ring, triazole ring, tetrazole ring, thiophene ring, furan ring, thiazole ring, oxazole Ring, indole ring, isoindole ring, indazole ring, benzimidazole ring, benzotriazole ring, benzothiazole ring, benzoxazole ring, purine ring, force rubazole ring, pyrrolidine ring, piperidine ring, piperazine ring , Monoreforin ring, thiomorpholine ring, homopiperidine ring, homopiperazine ring, tetrahydropyridine ring, tetrahydroquinoline ring, tetrahydroisoquinoline ring, tetrahydrofuran ring, tetrahydropyran ring, dihydrobenzofuran ring, tetrahydride And locarbazole ring.
[0013] R1および R2が隣接する窒素原子と一緒になつて形成される複素環としては、例え ば、少なくとも 1個の窒素原子を含む 5員または 6員の単環性複素環 (該単環性複素 環は、他の窒素原子、酸素原子または硫黄原子を含んでいてもよい)、 3〜8員の環 が縮合した二環または三環性で少なくとも 1個の窒素原子を含む縮環性複素環 (該 縮環性複素環は、他の窒素原子、酸素原子または硫黄原子を含んでいてもよい)等 があげられ、その具体例としては、ピロリジン環、ピぺリジン環、ピぺラジン環、モルホ リン環、チオモルホリン環、ホモピぺリジン環、ホモピぺラジン環、テトラヒドロピリジン 環、テトラヒドロキノリン環、テトラヒドロイソキノリン環、ピロール環、イミダゾール環、ピ ラゾール環、インドール環、インドリン環、イソインドール環等があげられる。 [0013] The heterocycle formed by combining R 1 and R 2 with the adjacent nitrogen atom includes, for example, a 5-membered or 6-membered monocyclic heterocycle containing at least one nitrogen atom A monocyclic heterocycle may contain other nitrogen, oxygen or sulfur atoms), a bicyclic or tricyclic condensed 3- to 8-membered ring and containing at least one nitrogen atom. Cyclic heterocyclic rings (the condensed heterocyclic rings may contain other nitrogen, oxygen or sulfur atoms), and specific examples thereof include pyrrolidine ring, piperidine ring, piperidine ring, and the like. Perazine ring, morpholine ring, thiomorpholine ring, homopiperidine ring, homopiperazine ring, tetrahydropyridine ring, tetrahydroquinoline ring, tetrahydroisoquinoline ring, pyrrole ring, imidazole ring, pyrazole ring, indole ring, indoline ring, B Indole ring, and the like.
[0014] R1および R3、または R2および R4がそれぞれが隣接する N— C— Cと一緒になつて 形成される複素環としては、例えば、少なくとも 1個の窒素原子を含む 5員または 6員 の単環性複素環 (該単環性複素環は、他の窒素原子、酸素原子または硫黄原子を 含んでいてもよい)、 3〜8員の環が縮合した二環または三環性で少なくとも 1個の窒 素原子を含む縮環性複素環 (該縮環性複素環は、他の窒素原子、酸素原子または 硫黄原子を含んでいてもよい)等があげられ、その具体例としては、ピロリン環、 1 , 2 , 3, 4—テトラヒドロピリジン環、 1, 2, 3, 4—テトラヒドロビラジン環、 2, 3—ジヒドロノヽ。 ラオキサジン環、 2, 3—ジヒドロ一 1, 4 _チアジン環、テトラヒドロアゼピン環、テトラヒ ドロジァゼピン環、テトラヒドロキノリン環、テトラヒドロイソキノリン環、ピロール環、イミダ ゾール環、ピラゾール環、インドール環等があげられる。 [0015] ァラルキル基、ァリール基、複素環基、 R1および R2が隣接する窒素原子と一緒にな つて形成される複素環、ならびに R1および 、または R2および R4がそれぞれが隣接 する N— C— Cと一緒になつて形成される複素環の置換基としては、例えば、同一ま たは異なって 1〜5個の置換基、具体的には、ヒドロキシル基、カルボキシル基、ホス ホノ基、スノレホ基、ハロゲン原子、ァノレキノレ基、アルコキシル基、ニトロ基、アルキル 置換または非置換のアミノ基等があげられる。ハロゲン原子、アルキル基およびアル コキシノレ基は、それぞれ前記と同義であり、アルキル置換アミノ基のアルキル部分は 前記アルキル基と同義である。 [0014] The heterocyclic ring formed by combining R 1 and R 3 , or R 2 and R 4 together with adjacent N—C—C includes, for example, a 5-membered structure containing at least one nitrogen atom Or a 6-membered monocyclic heterocycle (this monocyclic heterocycle may contain other nitrogen, oxygen or sulfur atoms), a bicyclic or tricyclic condensed 3- to 8-membered ring Specific examples of the condensed heterocyclic ring containing at least one nitrogen atom (the condensed heterocyclic ring may contain other nitrogen atom, oxygen atom or sulfur atom). As a pyrroline ring, 1, 2, 3, 4-tetrahydropyridine ring, 1, 2, 3, 4-tetrahydrovirazine ring, 2, 3-dihydronozole. Examples include raoxazine ring, 2,3-dihydro-1,4_thiazine ring, tetrahydroazepine ring, tetrahydrazepine ring, tetrahydroquinoline ring, tetrahydroisoquinoline ring, pyrrole ring, imidazole ring, pyrazole ring, indole ring and the like. [0015] an aralkyl group, an aryl group, a heterocyclic group, a heterocyclic ring formed by combining R 1 and R 2 with an adjacent nitrogen atom, and R 1 and, or R 2 and R 4 are adjacent to each other Examples of the substituent of the heterocyclic ring formed together with N—C—C include the same or different 1 to 5 substituents, specifically, hydroxyl group, carboxyl group, phosphono A group, a snorejo group, a halogen atom, an anolenoquinole group, an alkoxyl group, a nitro group, an alkyl-substituted or unsubstituted amino group, and the like. A halogen atom, an alkyl group, and an alkoxy group are as defined above, and an alkyl portion of the alkyl-substituted amino group is as defined above.
[0016] アルキル基およびアルコキシル基の置換基としては、例えば、同一または異なって :!〜 3個の置換基、具体的には、ヒドロキシル基、カルボキシル基、ホスホノ基、スルホ 基、ハロゲン原子、アルコキシル基等があげられる。ハロゲン原子およびアルコキシ ル基は、それぞれ前記と同義である。 [0016] Examples of the substituent of the alkyl group and alkoxyl group are the same or different:! To 3 substituents, specifically, a hydroxyl group, a carboxyl group, a phosphono group, a sulfo group, a halogen atom, an alkoxyl Group and the like. The halogen atom and the alkoxyl group have the same meanings as described above.
酸性基とは解離することができる水素原子を有している基を指し、例えば、カルボキ シノレ基、ヒドロキシル基、ホスホノ基、スルホ基等があげられる。これらの基はアルカリ 金属イオン、アンモニゥムイオン、有機アンモニゥムイオン等と塩を形成したものであ つてもよレ、。また、分子内錯塩を形成していてもよレ、。アルカリ金属イオンにおけるァ ルカリ金属としては、リチウム、ナトリウム、カリウム等があげられる。有機アンモニゥム イオンにおける有機アンモニゥムとしては、テトラプチルアンモニゥム等があげられる。 An acidic group refers to a group having a hydrogen atom that can be dissociated, and examples thereof include a carboxyleno group, a hydroxyl group, a phosphono group, and a sulfo group. These groups may form salts with alkali metal ions, ammonium ions, organic ammonium ions, etc. Moreover, it may form an intramolecular complex salt. Examples of alkali metals in alkali metal ions include lithium, sodium, and potassium. Organic ammonium In organic ions, tetraptylammonium and the like can be mentioned.
[0017] スクァリリウム化合物(I)は、公知の方法 (WO01/44233等)でまたはそれらに準 じて製造される。以下、スクァリリウム化合物(I)の製造法の例について説明するが、 本発明はこれに限定されるものではない。 [0017] The squarylium compound (I) is produced by a known method (WO01 / 44233 or the like) or a method equivalent thereto. Hereinafter, although the example of the manufacturing method of squarylium compound (I) is demonstrated, this invention is not limited to this.
反、'、式(a) Opposite, ', formula (a)
[0018] [化 2] [0018] [Chemical 2]
( I I ) ( I V) [0019] 反応式 (b) (II) (IV) [0019] Reaction formula (b)
[0020] [化 3] [0020] [Chemical 3]
化合物(I V)Compound (I V)
[0021] 反応式 (c) [0021] Reaction formula (c)
[0022] [化 4] [0022] [Chemical 4]
化合物(V) 化合物( I Compound (V) Compound (I
[0023] [式中、 R、 R2、 R3、 Aおよび Xは、それぞれ前記と同義であり、 W は塩素、臭素等のハロゲン原子、または OR8 (式中、 R8は前記と同義のアルキル基を 表す)を表す] [0023] [wherein R, R 2 , R 3 , A and X are each as defined above, W is a halogen atom such as chlorine or bromine, or OR 8 (wherein R 8 represents an alkyl group as defined above)]
反応式 a) Reaction formula a)
化合物(IV)は、化合物(II)と 1〜2倍モルの化合物(III)とを、 1〜2倍モルの塩基 存在下で、溶媒中、 0〜40°Cで 1〜20時間反応させることにより得られる。 Compound (IV) is obtained by reacting Compound (II) with 1 to 2 moles of Compound (III) in the presence of 1 to 2 moles of a base in a solvent at 0 to 40 ° C for 1 to 20 hours. Can be obtained.
[0024] 溶媒としては、例えば、クロ口ホルム、ジクロロメタン、 1, 2—ジクロロェタン等のハロ ゲン化炭化水素類、ジェチルエーテル、 tert—ブチルメチルエーテル等のエーテル 類、トルエン、ベンゼン等の芳香族炭化水素、メタノーノレ、エタノール、プロパノール 等のアルコール類、テトラヒドロフラン、酢酸ェチル、ジメチルホルムアミド、ジメチルス ルホキシド(DMSO)等があげられる。 [0024] Examples of the solvent include halogenated hydrocarbons such as chloroform, dichloromethane, 1,2-dichloroethane, ethers such as jetyl ether and tert-butyl methyl ether, and aromatics such as toluene and benzene. Examples include hydrocarbons, methanol, alcohols such as ethanol and propanol, tetrahydrofuran, ethyl acetate, dimethylformamide, and dimethylsulfoxide (DMSO).
[0025] 塩基としては、例えばキノリン、トリェチルァミン、ピリジン等の有機塩基または炭酸 カリウム、炭酸水素カリウム、炭酸ナトリウム、炭酸水素ナトリウム、水酸化カリウム、水 酸化ナトリウム等の無機塩基が用いられる。 化合物(III)は、例えば、市販品として、入手が可能である。 化合物(V)は、化合物(IV)を 50〜90容量%の酢酸水溶液中で、 90〜: 120°Cで 0 .:!〜 7時間、または 50〜99重量%のトリフルォロ酢酸水溶液中で、 45〜50°Cで 0. :!〜 3時間処理することにより得られる。 [0025] As the base, for example, an organic base such as quinoline, triethylamine, pyridine or the like, or an inorganic base such as potassium carbonate, potassium hydrogen carbonate, sodium carbonate, sodium hydrogen carbonate, potassium hydroxide, sodium hydroxide or the like is used. Compound (III) can be obtained, for example, as a commercial product. Compound (V) is compound (IV) in 50-90% by volume aqueous acetic acid solution, 90-: 120 ° C. for 0.7: -7 hours, or 50-99% by weight trifluoroacetic acid aqueous solution, It can be obtained by treating at 45 to 50 ° C for 0.:! To 3 hours.
反 、'、式 ) Anti, ', expression)
化合物(I)は、化合物 (V)と:!〜 2倍モルの化合物 (VI)とを、必要に応じて、 1〜2 倍モルの塩基存在下で、溶媒中、 80〜: 120°Cで 1〜: 15時間反応させることにより得 られる。 Compound (I) is compound (V):! ~~ 2 times mole of compound (VI), optionally in the presence of 1 ~ 2 times mole of base, in solvent, 80 ~: 120 ° C 1 to: obtained by reacting for 15 hours.
[0026] 溶媒としては、例えば、エタノール、プロパノール、イソプロピルアルコール、ブタノ ール、ォクタノール等の炭素数 2〜8のアルコール系溶媒のみ、または該アルコール 系溶媒とベンゼンもしくはトルエンとの混合溶媒(アルコール 40容量%以上)等が用 いられる。 [0026] Examples of the solvent include only alcohol solvents having 2 to 8 carbon atoms such as ethanol, propanol, isopropyl alcohol, butanol, and octanol, or a mixed solvent (alcohol 40) of the alcohol solvent and benzene or toluene. Volume% or more) is used.
塩基としては、例えば、キノリン、トリェチルァミン、ピリジン等の有機塩基または炭酸 カリウム、炭酸水素カリウム、炭酸水素ナトリウム等の無機塩基があげられる。 Examples of the base include organic bases such as quinoline, triethylamine, and pyridine, and inorganic bases such as potassium carbonate, potassium bicarbonate, and sodium bicarbonate.
[0027] 化合物 (VI)は、公知の方法 (WO01/4437等)でまたはそれらに準じて製造する こと力 Sできる。 [0027] Compound (VI) can be produced by a known method (WO01 / 4437 or the like) or according thereto.
反応後、化合物(I)は、例えば、溶媒の留去または濾過を行い、必要により有機合 成化学で通常用いられる方法 (カラムクロマトグラフィー、再結晶、溶媒での洗浄等) でさらに精製処理することにより、単離精製することができる。 After the reaction, for example, the compound (I) is further purified by a method usually used in organic synthetic chemistry (column chromatography, recrystallization, washing with a solvent, etc.), if necessary, by evaporating or filtering the solvent. Thus, it can be isolated and purified.
[0028] 本発明のスクァリリウム化合物(I)の具体例を表 1に例示する力 本発明のスクァリリ ゥム化合物(I)は、これらに限定されるものではなレ、。表 1中、 Meはメチル基、 Etはェ チノレ基、 Buはブチル基を表す。 [0028] The ability to illustrate specific examples of the squarylium compound (I) of the present invention in Table 1. The squarylium compound (I) of the present invention is not limited to these. In Table 1, Me represents a methyl group, Et represents an ethynole group, and Bu represents a butyl group.
[0029] [表 1] 表 1 [0029] [Table 1] table 1
次に、本発明の光電変換材料、光電変換素子および光電気化学電池について詳述 する。 Next, the photoelectric conversion material, photoelectric conversion element and photoelectrochemical cell of the present invention will be described in detail.
本発明の光電変換素子は、導電性支持体、導電性支持体上に設置されるスクァリリ ゥム化合物 (I)により増感された半導体からなる半導体薄膜電極、電荷移動層、対極 等から構成される。この光電変換素子を外部回路で仕事をさせる電池用途に使用で きるようにしたものが本発明の光電気化学電池である。すなわち、本発明の光電気化 学電池は、本発明の光電変換素子の導電性支持体および対極にリードを介して接 続された外部回路に仕事をさせるようにしたものである。該光電気化学電池は構成 物の劣化や電荷移動層に用いられる電解液の揮散を防止するために、側面をポリマ 一、接着剤等で密封されているのが好ましい。 The photoelectric conversion element of the present invention is composed of a conductive support, a semiconductor thin film electrode made of a semiconductor sensitized by the squaric compound (I) placed on the conductive support, a charge transfer layer, a counter electrode, and the like. The The photoelectrochemical cell according to the present invention is one in which this photoelectric conversion element can be used for a battery used for work in an external circuit. That is, the photoelectrochemical cell of the present invention is such that an external circuit connected to the conductive support and the counter electrode of the photoelectric conversion element of the present invention via a lead works. The photoelectrochemical cell is preferably sealed on the side with a polymer, an adhesive or the like in order to prevent deterioration of the constituents and volatilization of the electrolyte used for the charge transfer layer.
光電変換材料に用いる半導体はいわゆる感光体であり、光を吸収して電荷分離され 電子と正孔を生ずる役割を担う。スクァリリウム化合物(I)により増感された半導体で は、光吸収およびこれによる電子および正孔の発生は主としてスクァリリウム化合物(I )において起こり、半導体はこの電子を受け取り、伝達する役割を担う。 The semiconductor used for the photoelectric conversion material is a so-called photoconductor, which absorbs light and separates charges to generate electrons and holes. In semiconductors sensitized by squarylium compound (I), light absorption and the generation of electrons and holes due to this are mainly due to squarylium compound (I The semiconductor is responsible for receiving and transmitting these electrons.
[0031] 半導体としては、特に限定されないが、例えば、酸化チタン、酸化インジウム、酸化 スズ、酸化ビスマス、酸化ジルコニウム、酸化タンタル、酸化ニオブ、酸化タンダステ ン、酸化鉄、酸化ガリウム、酸化ニッケル等の単一金属酸化物、チタン酸ストロンチウ ム、チタン酸バリウム、ニオブ酸カリウム、タンタル酸ナトリウム等の複合酸化物、ヨウ 化銀、臭化銀、ヨウ化銅、臭化銅等の金属ハロゲン化物、硫化亜鉛、硫化チタン、硫 ィ匕インジウム、硫化ビスマス、硫化カドミウム、硫化ジルコニウム、硫化タンタル、硫化 銀、硫化スズ、硫化タングステン、硫化モリブデン、セレンィ匕カドミウム、セレン化ジノレ コニゥム、セレン化亜鉛、セレン化チタン、セレン化インジウム、セレン化タングステン 、セレン化モリブデン、セレン化ビスマス、テルル化カドミウム、テルル化タングステン 、テルル化モリブデン、テルル化亜鉛、テルル化ビスマス等のカルコゲナイド化合物 等があげられる。 [0031] The semiconductor is not particularly limited, but for example, a simple substance such as titanium oxide, indium oxide, tin oxide, bismuth oxide, zirconium oxide, tantalum oxide, niobium oxide, tandasten oxide, iron oxide, gallium oxide, nickel oxide or the like. Monometallic oxides, composite oxides such as strontium titanate, barium titanate, potassium niobate and sodium tantalate, metal halides such as silver iodide, silver bromide, copper iodide and copper bromide, zinc sulfide , Titanium sulfide, indium sulfide, bismuth sulfide, cadmium sulfide, zirconium sulfide, tantalum sulfide, silver sulfide, tin sulfide, tungsten sulfide, molybdenum sulfide, selenium cadmium, zinc selenide, zinc selenide, titanium selenide, Indium selenide, tungsten selenide, molybdenum selenide, Ren bismuth, cadmium telluride, tellurium, tungsten, tellurium, molybdenum, zinc telluride, chalcogenide compounds such as bismuth telluride and the like.
[0032] 前記の半導体は、単独でまたは二種類以上混合して用いられる。 [0032] The semiconductors described above are used alone or in combination of two or more.
半導体薄膜は、ナノ粒子からなるナノポーラス構造を有する化合物半導体であるの が好ましぐ前記にあげた半導体を用いて製造することができる [「ジャーナル 'ォブ' アメリカン 'セラミック'ソサイエティー (Journal of American Ceramic Society) 」、 1997年、第 80卷、第 12号、 p. 3157]。 Semiconductor thin films can be manufactured using the semiconductors listed above, which are preferably compound semiconductors having nanoporous structures composed of nanoparticles [Journal of American 'Ceramic' Society (Journal of American Ceramic Society) ", 1997, No. 80, No. 12, p. 3157].
[0033] 本発明の光電変換素子に使用される半導体薄膜電極は、例えば、導電性支持体 として透明電極を用意し、その上に半導体薄膜を積層し、その半導体薄膜に本発明 によるスクァリリウム化合物(I)を吸着させることにより製造することができる。 [0033] The semiconductor thin film electrode used in the photoelectric conversion element of the present invention is prepared, for example, by preparing a transparent electrode as a conductive support, laminating a semiconductor thin film thereon, and forming the squarylium compound ( It can be produced by adsorbing I).
透明電極としては、導電性を有するものであればよぐ例えば、透明または半透明 のガラス基板やプラスチック板上に、例えば、フッ素またはアンチモンドープの酸化ス ズ、スズドープの酸化インジウム、酸化亜鉛等の導電性透明酸化物半導体薄膜をコ ートしたもの、好ましくは、フッ素ドープの酸化スズ薄膜をコートしたもの等が用いられ る。 The transparent electrode is not particularly limited as long as it has conductivity. For example, on a transparent or translucent glass substrate or plastic plate, for example, fluorine or antimony-doped oxide oxide, tin-doped indium oxide, zinc oxide, etc. Those coated with a conductive transparent oxide semiconductor thin film, preferably those coated with a fluorine-doped tin oxide thin film are used.
[0034] 化合物半導体を導電性支持体上に設置する方法としては、例えば、前記化合物半 導体の分散液またはコロイド溶液を導電性支持体上に塗布する方法等があげられる 塗布方法としては、ローラ法、ディップ法、エアーナイフ法、ブレード法、スピン法、 スプレー法等があげられる。 [0034] Examples of the method of placing the compound semiconductor on the conductive support include a method of applying a dispersion or colloidal solution of the compound semiconductor on the conductive support. Examples of the application method include a roller method, a dip method, an air knife method, a blade method, a spin method, and a spray method.
化合物半導体は、導電性支持体に塗布した後に半導体微粒子同士を電子的にコ ンタタトさせるため、および塗膜強度の向上や支持体との密着性を向上させるために Compound semiconductors are used to electronically contact semiconductor fine particles after being applied to a conductive support, and to improve coating film strength and adhesion to the support.
、加熱処理することが好ましレ、。好ましい加熱処理温度の範囲は 100〜600°Cである 。また、加熱処理時間は 10分間〜 10時間である。ポリマーフィルム等の融点や軟化 点の低い導電性支持体を用いる場合は、高温処理は該支持体の劣化を招くため、 5 nm以下の小さい半導体微粒子の併用ゃ鉱酸の存在下での加熱処理を行う方法、 化合物半導体の分散液またはコロイド溶液とチタン塩 (例えば、四塩化チタン等)の 混合物を導電性支持体に塗布後、水熱処理を行う方法、化合物半導体を極性有機 溶媒 (例えば、 tert—ブタノール等)に分散させ、電気泳動により泳動電着を行う方 法、化合物半導体の分散液またはコロイド溶液を導電性支持体に塗布後、約 98070 kPaの圧力で加圧プレスする方法、化合物半導体の分散液またはコロイド溶液を導 電性支持体に塗布後、約 28GHzのマイクロ波を照射する方法等が用いられる。半導 体薄膜の膜厚は 0. 1〜: 100 /i mであるのが好ましぐより好ましくは 2〜25 /i mであ る。 Les, preferable to heat treatment. A preferable heat treatment temperature range is 100 to 600 ° C. The heat treatment time is 10 minutes to 10 hours. When using a conductive support with a low melting point and softening point, such as a polymer film, the high temperature treatment causes deterioration of the support. Therefore, heat treatment in the presence of mineral acid is used in combination with small semiconductor particles of 5 nm or less. A method in which a dispersion of a compound semiconductor or a mixture of a colloidal solution and a titanium salt (eg, titanium tetrachloride) is applied to a conductive support, followed by hydrothermal treatment, and the compound semiconductor in a polar organic solvent (eg, tert -Method of performing electrophoretic deposition by electrophoresis in a butanol etc., applying a compound semiconductor dispersion or colloidal solution to a conductive support and then pressing and pressing at a pressure of about 98070 kPa, compound semiconductor For example, a method of irradiating a microwave of about 28 GHz after applying a dispersion or colloidal solution on a conductive support is used. The film thickness of the semiconductor thin film is preferably 0.1 to 100 / im, more preferably 2 to 25 / im.
[0035] スクァリリウム化合物(I)の半導体薄膜上への吸着は、スクァリリウム化合物(I)溶液 中に支持体に塗布された半導体薄膜を浸し、室温で 1分間〜 2日間、または加熱条 件下で 1分間〜 24時間放置することにより行うことができる。スクァリリウム化合物(I) を半導体薄膜上に吸着させる場合に用いる溶媒としては、スクァリリウム化合物 (I)を 溶解する溶媒であれば、特に限定されないが、例えば、メタノール、エタノール等の アルコール溶媒、ベンゼン等の炭化水素溶媒、テトラヒドロフラン、ァセトニトリル等の 有機溶媒等があげられ、それらの混合溶媒を用いてもよぐ好ましくは、ァセトニトリル 等があげられる。スクァリリウム化合物 (I)を半導体薄膜上に吸着させる場合のスクァ リリウム化合物(I)溶液の濃度は 0. Olmmol/1以上であるのが好ましぐ 0. 1〜: 1. 0 mmolZlであるのがより好ましい。 [0035] The adsorption of the squarylium compound (I) onto the semiconductor thin film is performed by immersing the semiconductor thin film coated on the support in the squarylium compound (I) solution, and at room temperature for 1 minute to 2 days, or under heating conditions. It can be performed by leaving it for 1 minute to 24 hours. The solvent used when the squarylium compound (I) is adsorbed on the semiconductor thin film is not particularly limited as long as it is a solvent that dissolves the squarylium compound (I). For example, alcohol solvents such as methanol and ethanol, benzene and the like Hydrocarbon solvents, organic solvents such as tetrahydrofuran and acetonitrile, and the like, and mixed solvents thereof are preferable. Acetonitrile and the like are preferable. When the squarylium compound (I) is adsorbed on the semiconductor thin film, the concentration of the squarylium compound (I) solution is preferably not less than 0.1 Olmmol / 1, and 0.1 to 1.0 mmolZl. More preferred.
[0036] 光電変換の波長域をできるだけ広くし、かつエネルギー変換効率を上げるため、ス クァリリウム化合物(I)と公知の色素、例えば、ルテニウム錯体色素、他の有機色素( 例えば、ポリメチン色素)等を併用してもよい。 [0036] In order to make the wavelength range of photoelectric conversion as wide as possible and increase the energy conversion efficiency, the squarylium compound (I) and known dyes such as ruthenium complex dyes, other organic dyes ( For example, a polymethine dye) may be used in combination.
また、会合等色素同士の相互作用を低減する目的でカルボキシノレ基を有するステ ロイド化合物(例えば、ケノデォキシコール酸)等を半導体薄膜に共吸着させてもょレ、 。さらに、紫外線吸収剤を併用してもよい。 In addition, for the purpose of reducing the interaction between dyes such as association, a steroid compound having a carboxynole group (for example, chenodeoxycholic acid) or the like may be co-adsorbed on a semiconductor thin film. Furthermore, you may use a ultraviolet absorber together.
[0037] 電荷移動層は、スクァリリウム化合物(I)の酸化体に電子を補充する機能を有する 層である [光を吸収したスクァリリウム化合物(I)は増感作用によって、電子を放出す るため、酸化体に変換される]。 [0037] The charge transfer layer is a layer having a function of replenishing electrons to the oxidant of the squarylium compound (I). [Squarium compound (I) that absorbs light emits electrons by sensitization, Converted to oxidant].
本発明の光電変換素子に使用される電荷移動層としては、例えば、レドックスィォ ン対を有機溶媒に溶解した液体 (電解液)、レドッタスイオン対を有機溶媒に溶解した 液体にポリマーを含浸したゲル電解質、レドックスイオン対を含有する溶融塩、固体 電解質、無機化合物半導体、有機正孔輸送材料等があげられる。 Examples of the charge transfer layer used in the photoelectric conversion element of the present invention include a liquid (electrolytic solution) obtained by dissolving a redoxion pair in an organic solvent, a gel electrolyte obtained by impregnating a polymer in a liquid obtained by dissolving a redox ion pair in an organic solvent, Examples thereof include a molten salt containing a redox ion pair, a solid electrolyte, an inorganic compound semiconductor, and an organic hole transport material.
[0038] レドックスイオン対としては、例えば、ヨウ素レドックス、臭素レドックス、鉄レドックス、 スズレドックス、クロムレドックス、バナジウムレドックス、硫化物イオンレドックス、アント ラキノンレドックス等があげられる力 これらに限定されなレ、。より具体的には、ヨウ素 レドックスとしては、ヨウ化イミダゾリゥム誘導体、ヨウ化リチウム、ヨウ化カリウム、ヨウ化 テトラアルキルアンモニゥム塩等とヨウ素との混合物、また、臭素レドックスとしては、 臭化イミダゾリゥム誘導体、臭化リチウム、臭化カリウム、臭化テトラアルキルアンモニ ゥム塩等と臭素との混合物等があげられる。中でも、ヨウ化リチウム、ヨウ化イミダゾリウ ム誘導体等とヨウ素との混合物が好ましレ、。レドックスイオン対を溶解する有機溶媒と しては、安定でかつレドックスイオン対を溶解する溶媒ならば限定されないが、例え ば、ァセトニトリル、メトキシァセトニトリル、プロピオ二トリル、メトキシプロピオ二トリル、 エチレンカーボネート、プロピレンカーボネート、ジメチルスルホキシド、ジメチルホル ムアミド、テトラヒドロフラン、ニトロメタン等の有機溶媒があげられ、それらの混合溶媒 を用いてもよぐ好ましくは、ァセトニトリル、メトキシァセトニトリル、プロピオ二トリル、メ トキシプロピオ二トリル等があげられる。前記電解液におけるレドックスイオン対の濃 度は、好ましくは 0. 01〜5. Omol/1、より好ましくは、 0. 05〜: 1. Omol/1である。 [0038] The redox ion pair includes, for example, iodine redox, bromine redox, iron redox, tin redox, chromium redox, vanadium redox, sulfide ion redox, anthraquinone redox, and the like. . More specifically, iodine redox includes imidazolium iodide derivatives, lithium iodide, potassium iodide, tetraalkylammonium iodide and iodine mixtures, and bromine redox includes imidazolium bromide derivatives. And a mixture of bromine with lithium bromide, potassium bromide, tetraalkylammonium bromide and the like. Of these, a mixture of iodine with lithium iodide, an imidazolium iodide derivative, or the like is preferred. The organic solvent that dissolves the redox ion pair is not limited as long as it is a stable solvent that dissolves the redox ion pair.For example, acetonitrile, methoxyacetonitrile, propionitol, methoxypropionitol, ethylene Examples thereof include organic solvents such as carbonate, propylene carbonate, dimethyl sulfoxide, dimethylformamide, tetrahydrofuran, and nitromethane. It is preferable to use a mixed solvent thereof. Etc. The concentration of the redox ion pair in the electrolytic solution is preferably 0.01 to 5. Omol / 1, more preferably 0.05 to 1. Omol / 1.
[0039] 前記電解液は tert—ブチルピリジン、 2_ピコリン、 2, 6—ルチジン等の塩基性化 合物を含有していてもよレ、。塩基性化合物の濃度は、好ましくは 0. 01〜5. Omol/1 、より好ましくは 0· 1〜: ί · Omol/1である。 [0039] The electrolytic solution may contain a basic compound such as tert-butylpyridine, 2_picoline, 2,6-lutidine. The concentration of the basic compound is preferably 0.01 to 5. Omol / 1 More preferably, 0 · 1 to: ί · Omol / 1.
ゲル電解質に使用されるポリマーとしては、ポリアクリロニトリル、ポリビニリデンフル オリド等があげられる。 Examples of the polymer used for the gel electrolyte include polyacrylonitrile and polyvinylidene fluoride.
[0040] 溶融塩としては、 1 _ブチル _ 3 _メチルピリジニゥムョーダイド、 1 _ブチル _ 3—メ チルイミダゾリゥムョーダイド、ヨウ化リチウム、酢酸リチウム、過塩素酸リチウム等のリ チウム塩等があげられ、これらにポリエチレンォキシド等のポリマーを混合することに より、室温での流動性を高めてもよい。 [0040] Examples of the molten salt include 1_butyl_3_methylpyridinum-mouldide, 1_butyl_3-methylimidazolium mouldide, lithium iodide, lithium acetate, and lithium perchlorate. Examples thereof include thium salts, and the fluidity at room temperature may be improved by mixing a polymer such as polyethylene oxide with these.
固体電解質としては、ポリエチレンォキシド誘導体等のポリマーがあげられる。 Examples of the solid electrolyte include polymers such as polyethylene oxide derivatives.
[0041] 無機化合物半導体としては、ヨウ化銅、臭化銅、チォシアン化銅等があげられる。 [0041] Examples of the inorganic compound semiconductor include copper iodide, copper bromide, and copper thiocyanide.
無機化合物半導体中にチォシアン酸トリェチルアンモニゥム等の溶融塩を含んでい てもよい。 The inorganic compound semiconductor may contain a molten salt such as triethyl ammonium thiocyanate.
有機正孔輸送材料としては、ポリチオフヱン誘導体、ポリピロール誘導体等があげ られる。 Examples of the organic hole transport material include polythiophene derivatives and polypyrrole derivatives.
無機化合物半導体や有機正孔輸送材料を使用する場合は、短絡防止のためスプ レーパイロリシス等の手法を用いて二酸化チタン薄膜を下塗り層(短絡防止層)として 塗設してもよい。 When using an inorganic compound semiconductor or an organic hole transport material, a titanium dioxide thin film may be applied as an undercoat layer (short-circuit prevention layer) using a technique such as spray pyrolysis to prevent a short circuit.
[0042] 電荷移動層の形成方法に関しては 2通りの方法があげられ、ひとつは色素を吸着さ せた半導体薄膜電極に先に対極を貼り合わせておき、その間隙に液状の電荷移動 層を注入する方法である。もうひとつは、半導体薄膜電極に直接電荷移動層を付与 する方法で、対極はその後付与することになる。 [0042] There are two methods for forming the charge transfer layer, and one is that a counter electrode is first bonded to a semiconductor thin film electrode on which a dye is adsorbed, and a liquid charge transfer layer is injected into the gap. It is a method to do. The other is a method in which a charge transfer layer is directly applied to a semiconductor thin film electrode, and a counter electrode is subsequently applied.
前者の場合の電荷移動層の注入方法としては、毛細管現象を利用する常圧プロセ スと常圧より低い圧力にして気相を液相に置換する真空プロセスが利用できる。後者 の場合は、湿式の電荷移動層においては未乾燥のまま対極を付与し、エッジ部の液 漏洩防止措置も施すことになる。また、ゲル電解質の場合には、湿式で塗布して重 合等の方法により固定化する方法もあり、その場合には、乾燥し、固定化した後に対 極を付与することもできる。電解液、湿式有機正孔輸送材料またはゲル電解質を付 与する方法としては、半導体薄膜電極や色素の付与の際と同様に、浸漬法、ローラ 法、ディップ法、エアーナイフ法、ブレード法、スピン法、スプレー法等をあげることも できる。固体電解質、無機化合物半導体または固体の有機正孔輸送材料の場合に は、これらを溶媒等に溶解したものを加熱された半導体薄膜電極に滴下し、半導体 薄膜電極上で溶媒を気化させることにより乾固された電荷移動層を形成したり、真空 蒸着法、 CVD法 (化学気相成長法)等のドライ成膜処理により、電荷移動層を形成し た後、対極を付与することもできる。 As the injection method of the charge transfer layer in the former case, a normal pressure process utilizing capillary action and a vacuum process in which the gas phase is replaced with a liquid phase at a pressure lower than normal pressure can be used. In the latter case, in the wet charge transfer layer, a counter electrode is provided without being dried, and measures for preventing liquid leakage at the edge are also taken. In the case of a gel electrolyte, there is a method of applying it wet and immobilizing it by a method such as polymerization. In that case, the electrode can be applied after drying and immobilization. The method for applying the electrolyte, wet organic hole transport material or gel electrolyte is the same as that for applying the semiconductor thin film electrode and the dye, dipping method, roller method, dipping method, air knife method, blade method, spin method. Law, spray method, etc. it can. In the case of a solid electrolyte, an inorganic compound semiconductor, or a solid organic hole transport material, a solution obtained by dissolving them in a solvent or the like is dropped onto a heated semiconductor thin film electrode and dried by vaporizing the solvent on the semiconductor thin film electrode. A counter electrode can be applied after the charge transfer layer is formed by forming a solidified charge transfer layer, or by forming a charge transfer layer by a dry film forming process such as a vacuum deposition method or a CVD method (chemical vapor deposition method).
[0043] 本発明の光電変換素子に使用される対極としては、導電性基板上に薄膜状にコー トした白金、ロジウム、ルテニウム、カーボン、酸化物半導体電極等があげられ、中で も、導電性基板上に薄膜状にコートした白金、カーボン電極等が好ましい。 [0043] Examples of the counter electrode used in the photoelectric conversion element of the present invention include platinum, rhodium, ruthenium, carbon, oxide semiconductor electrode and the like coated in a thin film on a conductive substrate. Platinum, carbon electrodes and the like coated in a thin film on a conductive substrate are preferred.
本発明の光電変換素子においては、スぺーサーを用いてもよぐ半導体薄膜電極 と対極との接触を防ぐものであれば限定されなレ、が、例えば、ポリエチレン等のポリマ 一フィルムが用いられる。 In the photoelectric conversion element of the present invention, there is no limitation as long as it prevents contact between the semiconductor thin film electrode and the counter electrode, which may use a spacer, but for example, a polymer film such as polyethylene is used. .
[0044] また、本発明に用いられるスクァリリウム化合物(I)は、安価である。 [0044] Further, the squarylium compound (I) used in the present invention is inexpensive.
以下、実施例により、本発明をさらに具体的に説明する。 Hereinafter, the present invention will be described more specifically with reference to examples.
実施例 1 Example 1
[0045] 3, 4—ジクロロ一 3—シクロブテン一 1, 2—ジオン 1 · Olgおよび N, N—ジ一 n—ブ チルァ二リン 2. 76gをジクロロメタン 46mlに溶かし、 25°Cで 2時間攪拌した。反応後 、反応液を減圧濃縮し、得られた残渣に酢酸 4mlおよび水 2mlを加え、 110°Cで 1時 間反応させた。反応終了後、 10°Cまで冷却し、析出した不溶物を濾取した。得られ た固体に、 n—ブタノール 20ml、 トノレエン 20ml、 5_ォキソ _ 1 _フエニル _ 2—ピラ ゾリン _ 3 _カルボン酸 1. 00gを加え、 110°Cで 3時間反応させた。その後、メタノー ル 30mlを加え、 50°Cで 1時間攪拌した後、析出物を濾取することにより、化合物(1) 1. 50gを得た。 [0045] 3,4-Dichloro-1-3-cyclobutene-1,2-dione 1 · Olg and N, N-di-n-butyraniline 2. 76 g was dissolved in 46 ml of dichloromethane and stirred at 25 ° C for 2 hours. did. After the reaction, the reaction solution was concentrated under reduced pressure, 4 ml of acetic acid and 2 ml of water were added to the resulting residue, and the mixture was reacted at 110 ° C for 1 hour. After completion of the reaction, the reaction mixture was cooled to 10 ° C, and the precipitated insoluble matter was collected by filtration. To the resulting solid, 20 ml of n-butanol, 20 ml of tolenene, and 1.00 g of 5_oxo_1_phenyl_2-pyrazolin_3_carboxylic acid were added and reacted at 110 ° C. for 3 hours. Thereafter, 30 ml of methanol was added and stirred at 50 ° C. for 1 hour, and the precipitate was collected by filtration to obtain 1.50 g of Compound (1).
JH NMR (DMSO-d ) δ (ppm): 0.93 (6H, t, J = 7.3 Hz), 1.35 (4H, m), 1.56 (4 J H NMR (DMSO-d) δ (ppm): 0.93 (6H, t, J = 7.3 Hz), 1.35 (4H, m), 1.56 (4
6 6
H, m), 3.49 (4H, m), 6.93-7.95 (9H, m). H, m), 3.49 (4H, m), 6.93-7.95 (9H, m).
最大吸収波長(DMSO):え max 570nm (吸光係数 ε 57700) Maximum absorption wavelength (DMSO): max 570nm (extinction coefficient ε 57700)
実施例 2 Example 2
[0046] フッ素をドープした酸化スズをコーティングした透明導電性ガラス(日本板硝子製、 表面抵抗は約 15 Ω /cm2)の導電面側に二酸化チタンペースト(Solaronix製、 SA Ti-Nanoxide T)をガラス棒を用いて塗布し、室温で 30分間乾燥した後、電気 炉で 450°Cにて 30分間焼成した。二酸化チタンの膜厚は 10 μ ΐηであった。ガラスを 取り出し冷却した後、化合物(1)とケノデォキシコール酸を混合したァセトニトリル溶 液(化合物(1) 0. lmmol/l、ケノデォキシコール酸 10mmol/l)に 75°Cで 30分間 浸漬した。色素の吸着したガラスをァセトニトリルで洗浄し自然乾燥させた。 [0046] Titanium dioxide paste (manufactured by Solaronix, SA) on the conductive surface side of transparent conductive glass (manufactured by Nippon Sheet Glass, surface resistance is about 15 Ω / cm 2 ) coated with tin oxide doped with fluorine. Ti-Nanoxide T) was applied using a glass rod, dried at room temperature for 30 minutes, and then baked in an electric furnace at 450 ° C for 30 minutes. The thickness of titanium dioxide was 10 μΐη. After removing the glass and cooling, it was added to the acetonitrile solution (compound (1) 0.1 mmol / l, chenodeoxycholic acid 10 mmol / l) mixed with compound (1) and chenodeoxycholic acid at 75 ° C. Soaked for 30 minutes. The glass adsorbed with the dye was washed with acetonitrile and allowed to air dry.
[0047] 上述のようにして作成した二酸化チタン電極基板(lcm X 3cm)をこれと同じ大きさ の白金蒸着ガラスと重ね合わせた。次に、電解液 (ヨウ素 0. 05mol/l,ヨウ化リチウ ム 0. lmol/1,ジメチルプロピルイミダゾリルヨウ素 0. 62molZlおよび tert—ブチル ピリジン 0. 5mol/lのァセトニトリル溶液)を、両ガラスの隙間に毛細管現象を利用し て染み込ませて二酸化チタン電極と対極の間に導入することにより、光電気化学電 池を得た。この光電気化学電池について、 500Wクセノンショートアークランプ(ゥシ ォ電機製)を用い、 100mW/cm2の擬似太陽光を照射し、 I-Vカーブトレーサー( 英弘精機製)にてその特性を評価した。その結果、得られた光電気化学電池の特性 は、短絡電流密度 6. 7mA/cm2、開放電圧 0. 66V、形状因子(フィルファクター) 0 . 59、エネルギー変換効率 2. 5%であった。 [0047] The titanium dioxide electrode substrate (lcm X 3cm) prepared as described above was superposed on a platinum-deposited glass of the same size. Next, an electrolyte solution (iodine 0.05 mol / l, lithium iodide 0.1 mol / 1, dimethylpropylimidazolyl iodine 0.62 molZl and tert-butyl pyridine 0.5 mol / l acetonitrile solution) was placed between the two glasses. A photoelectrochemical cell was obtained by impregnating with a titanium dioxide electrode and introducing it between the titanium dioxide electrode and the counter electrode. This photoelectrochemical cell was irradiated with 100 mW / cm 2 of artificial sunlight using a 500 W xenon short arc lamp (manufactured by Usio Electric), and its characteristics were evaluated with an IV curve tracer (manufactured by Eihiro Seiki). As a result, the characteristics of the obtained photoelectrochemical cell were as follows: short-circuit current density 6.7 mA / cm 2 , open-circuit voltage 0.66 V, form factor (fill factor) 0.59, and energy conversion efficiency 2.5%. .
産業上の利用可能性 Industrial applicability
[0048] 本発明により、安価かつ高いエネルギー変換効率を有する光電変換素子に使用で きるスクァリリウム化合物、それを用いた光電気化学電池等が提供される。 [0048] According to the present invention, a squarylium compound that can be used in a photoelectric conversion element having low cost and high energy conversion efficiency, a photoelectrochemical cell using the squarylium compound, and the like are provided.
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006514556A JPWO2005121098A1 (en) | 2004-06-09 | 2005-06-09 | SQUARYLIUM COMPOUND AND PHOTOELECTRIC CONVERSION MATERIAL, PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTROCHEMICAL CELL USING THE SAME |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-170711 | 2004-06-09 | ||
JP2004170711 | 2004-06-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005121098A1 true WO2005121098A1 (en) | 2005-12-22 |
Family
ID=35502993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/010570 WO2005121098A1 (en) | 2004-06-09 | 2005-06-09 | Squarilium compound, photoelectric conversion material using same, photoelectric converter and photoelectrochemical cell |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPWO2005121098A1 (en) |
WO (1) | WO2005121098A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008090757A1 (en) * | 2007-01-22 | 2008-07-31 | Konica Minolta Holdings, Inc. | Squarylium compound, squarylium compound-containing composition, optical filter and front filter for display |
JP2018510845A (en) * | 2015-01-27 | 2018-04-19 | ソニー株式会社 | Squaline and thiophene-based molecules as materials for organic photoelectric conversion layers in organic photodiodes |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11214730A (en) * | 1997-07-18 | 1999-08-06 | Fuji Photo Film Co Ltd | Photoelectric conversion element and opto-electric chemical battery |
JP2000345059A (en) * | 1999-06-04 | 2000-12-12 | Konica Corp | Silver halide color photographic material, color toner, organic el element, ink, thermal recording material, optical recording medium, color filter, and squarilium compound |
JP2001076773A (en) * | 1999-08-31 | 2001-03-23 | Fuji Photo Film Co Ltd | Photoelectric transfer element, photoelectrochemical cell, and new squalenium cyanine dye |
JP2003068374A (en) * | 2001-06-14 | 2003-03-07 | Fuji Photo Film Co Ltd | Charge carrier material, photoelectric conversion element and photo-cell using the same, and pyridine compound |
WO2003085005A1 (en) * | 2002-04-08 | 2003-10-16 | Kyowa Hakko Chemical Co., Ltd. | Photopolymerizable composition |
JP2004212980A (en) * | 2002-12-19 | 2004-07-29 | Mitsubishi Chemicals Corp | Electronic display filters |
JP2004264805A (en) * | 2002-06-10 | 2004-09-24 | Mitsubishi Chemicals Corp | Electronic display filter and electronic display device using the filter |
JP2004272098A (en) * | 2003-03-11 | 2004-09-30 | Mitsubishi Chemicals Corp | Electronic display filter and electronic display device using the filter |
-
2005
- 2005-06-09 JP JP2006514556A patent/JPWO2005121098A1/en not_active Withdrawn
- 2005-06-09 WO PCT/JP2005/010570 patent/WO2005121098A1/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11214730A (en) * | 1997-07-18 | 1999-08-06 | Fuji Photo Film Co Ltd | Photoelectric conversion element and opto-electric chemical battery |
JP2000345059A (en) * | 1999-06-04 | 2000-12-12 | Konica Corp | Silver halide color photographic material, color toner, organic el element, ink, thermal recording material, optical recording medium, color filter, and squarilium compound |
JP2001076773A (en) * | 1999-08-31 | 2001-03-23 | Fuji Photo Film Co Ltd | Photoelectric transfer element, photoelectrochemical cell, and new squalenium cyanine dye |
JP2003068374A (en) * | 2001-06-14 | 2003-03-07 | Fuji Photo Film Co Ltd | Charge carrier material, photoelectric conversion element and photo-cell using the same, and pyridine compound |
WO2003085005A1 (en) * | 2002-04-08 | 2003-10-16 | Kyowa Hakko Chemical Co., Ltd. | Photopolymerizable composition |
JP2004264805A (en) * | 2002-06-10 | 2004-09-24 | Mitsubishi Chemicals Corp | Electronic display filter and electronic display device using the filter |
JP2004212980A (en) * | 2002-12-19 | 2004-07-29 | Mitsubishi Chemicals Corp | Electronic display filters |
JP2004272098A (en) * | 2003-03-11 | 2004-09-30 | Mitsubishi Chemicals Corp | Electronic display filter and electronic display device using the filter |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008090757A1 (en) * | 2007-01-22 | 2008-07-31 | Konica Minolta Holdings, Inc. | Squarylium compound, squarylium compound-containing composition, optical filter and front filter for display |
JPWO2008090757A1 (en) * | 2007-01-22 | 2010-05-20 | コニカミノルタホールディングス株式会社 | SQUARYLIUM COMPOUND, SQUARYLIUM COMPOUND-CONTAINING COMPOSITION, OPTICAL FILTER AND FRONT FILTER FOR DISPLAY |
JP2018510845A (en) * | 2015-01-27 | 2018-04-19 | ソニー株式会社 | Squaline and thiophene-based molecules as materials for organic photoelectric conversion layers in organic photodiodes |
US11352500B2 (en) | 2015-01-27 | 2022-06-07 | Sony Corporation | Squaraine-based molecules as material for organic photoelectric conversion layers in organic photodiodes |
Also Published As
Publication number | Publication date |
---|---|
JPWO2005121098A1 (en) | 2008-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4222466B2 (en) | Charge transport material, photoelectric conversion element and photovoltaic cell using the same, and pyridine compound | |
US7989691B2 (en) | Dye for dye-sensitized solar cell and dye-sensitized solar cell including the same | |
JP4363553B2 (en) | Electrolyte composition, photoelectric conversion element and photoelectrochemical cell | |
JP5925541B2 (en) | Metal complex dye for photoelectric conversion element, photoelectric conversion element, dye-sensitized solar cell, dye-adsorbing composition liquid for dye-sensitized solar cell, semiconductor electrode for dye-sensitized solar cell, and method for producing dye-sensitized solar cell | |
JP4620224B2 (en) | Electrolyte composition | |
EP1083582A2 (en) | Dye sensitized photoelectrochemical cell | |
JP4453889B2 (en) | Electrolytic solution composition, photoelectric conversion element and photovoltaic cell | |
KR101107069B1 (en) | Dye-sensitized solar cell dyes and dye-sensitized solar cells prepared using the same | |
JP2001167630A (en) | Electrolyte composition, photoelectric transducer and photoelectrochemical cell | |
JP4460686B2 (en) | Photoelectric conversion element and photoelectrochemical cell | |
JP2011119205A (en) | Photoelectric conversion element and photo-electrochemical cell | |
CN104995705B (en) | Organic dyestuff for the solar cell of dye sensitization | |
US8647708B2 (en) | Method of producing photoelectric conversion element, photoelectric conversion element, and photoelectrochemical cell | |
JPWO2006041156A1 (en) | SQUARYLIUM COMPOUND AND PHOTOELECTRIC CONVERSION MATERIAL, PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTROCHEMICAL CELL USING THE SAME | |
JP2006063034A (en) | Photoelectric conversion material, photoelectric conversion element and photoelectrochemical cell | |
WO2005121098A1 (en) | Squarilium compound, photoelectric conversion material using same, photoelectric converter and photoelectrochemical cell | |
JP2006063221A (en) | SQUARYLIUM COMPOUND AND ITS METAL COMPLEX | |
JP4082480B2 (en) | Photoelectric conversion element and photoelectrochemical cell | |
WO2005121127A1 (en) | Squarylium compound, photoelectric conversion material using same, photoelectric converter and photoelectrochemical cell | |
JPWO2006041155A1 (en) | SQUARYLIUM COMPOUND AND PHOTOELECTRIC CONVERSION MATERIAL, PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTROCHEMICAL CELL USING THE SAME | |
JP2008234902A (en) | Photoelectric conversion element and solar cell | |
WO2005122320A1 (en) | Photoelectric conversion material, photoelectric converter and photoelectrochemical cell | |
JP2003051344A (en) | Manufacturing method for photoelectric conversion element and photoelectric conversion element | |
JP4739693B2 (en) | Photoelectric conversion element | |
KR101940491B1 (en) | A NOBLE Ru-TYPE SENSITIZERS AND METHOD FOR PREPARING OF IT |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2006514556 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: DE |
|
122 | Ep: pct application non-entry in european phase |