WO2003056391A1 - Radiation-sensitive resin composition and process for formation of patterns - Google Patents
Radiation-sensitive resin composition and process for formation of patterns Download PDFInfo
- Publication number
- WO2003056391A1 WO2003056391A1 PCT/JP2002/013520 JP0213520W WO03056391A1 WO 2003056391 A1 WO2003056391 A1 WO 2003056391A1 JP 0213520 W JP0213520 W JP 0213520W WO 03056391 A1 WO03056391 A1 WO 03056391A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- radiation
- resin
- alicyclic
- polymer
- resin composition
- Prior art date
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- 230000005855 radiation Effects 0.000 title claims abstract description 73
- 239000011342 resin composition Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims description 43
- 230000015572 biosynthetic process Effects 0.000 title description 22
- 125000002723 alicyclic group Chemical group 0.000 claims abstract description 77
- 229920005672 polyolefin resin Polymers 0.000 claims abstract description 41
- 239000002253 acid Substances 0.000 claims abstract description 26
- 239000002904 solvent Substances 0.000 claims abstract description 20
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 14
- 229920005989 resin Polymers 0.000 claims description 119
- 239000011347 resin Substances 0.000 claims description 119
- -1 alicyclic olefin Chemical class 0.000 claims description 90
- 230000002378 acidificating effect Effects 0.000 claims description 74
- 239000000178 monomer Substances 0.000 claims description 63
- 229920000642 polymer Polymers 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 50
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims description 45
- 150000001875 compounds Chemical class 0.000 claims description 28
- 229920001577 copolymer Polymers 0.000 claims description 28
- 238000009826 distribution Methods 0.000 claims description 13
- 125000004432 carbon atom Chemical group C* 0.000 claims description 12
- 238000007142 ring opening reaction Methods 0.000 claims description 12
- 125000003118 aryl group Chemical group 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 150000008064 anhydrides Chemical group 0.000 claims description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 8
- 125000004185 ester group Chemical group 0.000 claims description 8
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 5
- 229920002554 vinyl polymer Polymers 0.000 claims description 5
- XBFJAVXCNXDMBH-UHFFFAOYSA-N tetracyclo[6.2.1.1(3,6).0(2,7)]dodec-4-ene Chemical group C1C(C23)C=CC1C3C1CC2CC1 XBFJAVXCNXDMBH-UHFFFAOYSA-N 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 229920000089 Cyclic olefin copolymer Polymers 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 244000309464 bull Species 0.000 claims description 2
- 150000001993 dienes Chemical class 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 230000003301 hydrolyzing effect Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 1
- 230000007261 regionalization Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 110
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 26
- 238000003786 synthesis reaction Methods 0.000 description 21
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 20
- 239000000243 solution Substances 0.000 description 17
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 16
- 238000005984 hydrogenation reaction Methods 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 13
- 239000000047 product Substances 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 12
- 238000011161 development Methods 0.000 description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 9
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- 238000006116 polymerization reaction Methods 0.000 description 9
- 230000007062 hydrolysis Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000004094 surface-active agent Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
- 238000005810 carbonylation reaction Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- OTTZHAVKAVGASB-UHFFFAOYSA-N hept-2-ene Chemical compound CCCCC=CC OTTZHAVKAVGASB-UHFFFAOYSA-N 0.000 description 6
- 239000003446 ligand Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 150000003304 ruthenium compounds Chemical class 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical compound CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 4
- WLTSXAIICPDFKI-UHFFFAOYSA-N 3-dodecene Chemical compound CCCCCCCCC=CCC WLTSXAIICPDFKI-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 125000003367 polycyclic group Chemical group 0.000 description 4
- 239000005056 polyisocyanate Substances 0.000 description 4
- 229920001228 polyisocyanate Polymers 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QGUPBYVADAJUNT-UHFFFAOYSA-N 6-morpholin-4-ium-4-yl-4,4-diphenylheptan-3-one;chloride Chemical compound Cl.C=1C=CC=CC=1C(C=1C=CC=CC=1)(C(=O)CC)CC(C)N1CCOCC1 QGUPBYVADAJUNT-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000012644 addition polymerization Methods 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000007334 copolymerization reaction Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000032050 esterification Effects 0.000 description 3
- 238000005886 esterification reaction Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000003607 modifier Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920000098 polyolefin Polymers 0.000 description 3
- 238000007152 ring opening metathesis polymerisation reaction Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- XWJBRBSPAODJER-UHFFFAOYSA-N 1,7-octadiene Chemical compound C=CCCCCC=C XWJBRBSPAODJER-UHFFFAOYSA-N 0.000 description 2
- QYCGBAJADAGLLK-UHFFFAOYSA-N 1-(cyclohepten-1-yl)cycloheptene Chemical class C1CCCCC=C1C1=CCCCCC1 QYCGBAJADAGLLK-UHFFFAOYSA-N 0.000 description 2
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 2
- ZGEGCLOFRBLKSE-UHFFFAOYSA-N 1-Heptene Chemical compound CCCCCC=C ZGEGCLOFRBLKSE-UHFFFAOYSA-N 0.000 description 2
- AFFLGGQVNFXPEV-UHFFFAOYSA-N 1-decene Chemical compound CCCCCCCCC=C AFFLGGQVNFXPEV-UHFFFAOYSA-N 0.000 description 2
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1-dodecene Chemical compound CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 description 2
- GQEZCXVZFLOKMC-UHFFFAOYSA-N 1-hexadecene Chemical compound CCCCCCCCCCCCCCC=C GQEZCXVZFLOKMC-UHFFFAOYSA-N 0.000 description 2
- HFDVRLIODXPAHB-UHFFFAOYSA-N 1-tetradecene Chemical compound CCCCCCCCCCCCC=C HFDVRLIODXPAHB-UHFFFAOYSA-N 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 2
- SDJHPPZKZZWAKF-UHFFFAOYSA-N 2,3-dimethylbuta-1,3-diene Chemical compound CC(=C)C(C)=C SDJHPPZKZZWAKF-UHFFFAOYSA-N 0.000 description 2
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
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- NDJKXXJCMXVBJW-UHFFFAOYSA-N Heptadecane Natural products CCCCCCCCCCCCCCCCC NDJKXXJCMXVBJW-UHFFFAOYSA-N 0.000 description 2
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- 229920000877 Melamine resin Polymers 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
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- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
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- NRIMHVFWRMABGJ-UHFFFAOYSA-N bicyclo[2.2.1]hepta-2,5-diene-2,3-dicarboxylic acid Chemical compound C1C2C(C(=O)O)=C(C(O)=O)C1C=C2 NRIMHVFWRMABGJ-UHFFFAOYSA-N 0.000 description 2
- 230000006315 carbonylation Effects 0.000 description 2
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
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- 230000000694 effects Effects 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
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- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 2
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- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
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- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadec-1-ene Chemical compound CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 2
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- 150000003839 salts Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
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- 229920001187 thermosetting polymer Polymers 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
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- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
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- ZRDYULMDEGRWRC-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O ZRDYULMDEGRWRC-UHFFFAOYSA-N 0.000 description 1
- JBVMSEMQJGGOFR-FNORWQNLSA-N (4e)-4-methylhexa-1,4-diene Chemical compound C\C=C(/C)CC=C JBVMSEMQJGGOFR-FNORWQNLSA-N 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- SEEPANYCNGTZFQ-UHFFFAOYSA-N sulfadiazine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)NC1=NC=CC=N1 SEEPANYCNGTZFQ-UHFFFAOYSA-N 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- MHSKRLJMQQNJNC-UHFFFAOYSA-N terephthalamide Chemical compound NC(=O)C1=CC=C(C(N)=O)C=C1 MHSKRLJMQQNJNC-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- PMTPAGVGEXGVNI-UHFFFAOYSA-N tetracyclo[10.2.1.02,11.04,9]pentadeca-2,4,6,13-tetraene Chemical compound C12=CC3=CC=CCC3CC2C2CC1C=C2 PMTPAGVGEXGVNI-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- 125000005490 tosylate group Chemical class 0.000 description 1
- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
Definitions
- the present invention relates to a radiation-sensitive resin composition, and more particularly, to a radiation-sensitive resin composition whose solubility in a developer, which is an alkaline solution, is changed by irradiation with actinic radiation such as a particle beam or an electron beam.
- the radiation-sensitive resin composition of the present invention forms a resin film, on which a pattern can be formed by photolithography.
- the radiation-sensitive resin composition of the present invention is suitable as a resin material for forming a resin film for electronic components such as a protective film, a planarizing film, and an electric insulating film. Background art
- Electronic components such as liquid crystal display elements, integrated circuit elements, and solid-state image sensors, and color filters for liquid crystal displays, etc. have protective films to prevent their deterioration and damage, and flatten element surfaces and wiring.
- a flattening film, an electric insulating film for maintaining electric insulation, and the like are provided.
- a thin film transistor type liquid crystal display element or an integrated circuit element is provided with an interlayer insulating film in order to insulate between wirings arranged in layers.
- a resin film for electronic components having various functions is used for the protective film, the flattening film, the inter-brows insulating film, and the like.
- a thermosetting resin material such as an epoxy resin has been widely used as a resin material for forming a resin film for electronic components.
- thermosetting resin material conventionally known as a material for forming electronic components
- a resin film having sufficient flatness may not be obtained. Therefore, there has been a demand for the development of a new resin material for forming a radiation-sensitive insulating film that enables fine pattern jungling.
- a norbornene-based monomer having an ester group such as a methoxycarbonyl group is subjected to ring-opening polymerization, the obtained ring-opened polymer is hydrogenated, and then the hydrogenated product is hydrolyzed.
- a radiation-sensitive resin composition using an alkali-soluble cyclic polyolefin resin obtained by decomposing to convert an ester group into a carboxyl group has been proposed (Japanese Patent Application Laid-Open No. 10-3073888, and Japanese Unexamined Patent Publication No. 11-5252754).
- This radiation-sensitive resin composition is a resin composition containing the above-described soluble polycyclic resin, an acid generator (for example, a quinonediazide compound), and a crosslinking agent. More specifically, in these publications, as the alkali-soluble cyclic polyolefm resin, 8-methyl-18-methoxycarbonyltetracyclo is used.
- a resin film obtained by using the radiation-sensitive composition described in the above publication has a dielectric constant, water absorption, flatness, transparency, solvent resistance, heat-resistant dimensional stability, and the like. was relatively good, but it was found that the resolution and the remaining film ratio were inferior, and it was difficult to obtain a good pattern shape. Disclosure of the invention
- An object of the present invention is a radiation-sensitive resin composition containing an alicyclic olefin resin having an acidic group, an acid generator, a crosslinking agent, and a solvent, and has a low dielectric constant, heat resistance, flatness, and transparency.
- An object of the present invention is to provide a radiation-sensitive resin composition which is not only excellent in solvent resistance and solvent resistance, but also excellent in resolution and residual film ratio, has good resilience and can give a fine pattern shape.
- Another object of the present invention is to provide a method for forming a pattern using a radiation-sensitive resin composition having such excellent properties.
- the present inventors have conducted intensive studies to achieve the above object, and as a result, have an acidic group.
- the weight average molecular weight, molecular weight distribution, the number of carbon atoms in the structural unit, and the ratio of acidic groups in the alicyclic resin within a specific range to reduce the solubility in an alkali developer. It was found that a strong radiation-suppressing effect was obtained with the above method, and as a result, a radiation-sensitive resin composition having excellent resolution, remaining film ratio, and pattern shape was obtained.
- the present invention has been completed based on these findings.
- a radiation-sensitive resin composition comprising (A) an alicyclic resin having an acidic group, (B) an acid generator, (C) a crosslinking agent, and (D) a solvent. (A) When the weight average molecular weight of the alicyclic olefin resin having an acidic group is less than 10,000, the following formula (1)
- MW is the weight average molecular weight
- AC is the average number of carbon atoms per structural unit
- AG is the number of moles of acidic groups in all structural units
- MWD is the molecular weight distribution.
- the radiation-sensitive resin composition is characterized in that the index C 2 represented by the formula (1) is 120 or more.
- a resin film is formed on a substrate using the radiation-sensitive resin composition, and active radiation is irradiated in a pattern from above the resin film to form a latent image on the resin film. It is difficult to form a pattern by forming a turn and then bringing the resin film into contact with a developer to make the pattern visible.
- the radiation-sensitive resin composition of the present invention contains (A) an alicyclic resin having an acidic group, (B) an acid generator, (C) a crosslinking agent, and (D) a solvent.
- A an alicyclic resin having an acidic group
- B an acid generator
- C a crosslinking agent
- D a solvent
- MW is the weight average molecular weight
- AC is the average number of carbon atoms per structural unit
- AG is the number of moles of acidic groups in all structural units
- MWD is the molecular weight distribution.
- An index having an index C 2 of 120 or more is used.
- the index C1 is 300 or more, preferably 400 or more, more preferably 500 or more, and particularly preferably 600 or more.
- the index C2 is at least 120, preferably at least 150, more preferably at least 200, particularly preferably at least 250.
- Weight average molecular weight, average number of carbons per structural unit hereinafter simply referred to as “average carbon number”
- average carbon number mol% of acidic groups in all structural units
- acidic group ratio mol% of acidic groups in all structural units
- molecular weight distribution This is an element that affects the solubility of the alicyclic resin having a group in an alkaline developer.
- the present inventors differ in the degree of influence of these elements on solubility in an alkaline developer when the weight average molecular weight of the alicyclic resin having an acidic group is 100,000. I found that.
- the solubility of an alicyclic olefin resin having an acidic group in an alkali developing solution is determined by an index C l represented by the formula (1) when the weight average molecular weight is less than 1000, The case where the weight average molecular weight is 1000 or more is determined by the index C2 represented by the formula (2).
- the weight average molecular weight is a value in terms of polystyrene measured by gel permeation chromatography (GPC) using tetrahydrofuran as a solvent, and the value rounded off to the nearest 10 is an effective figure. If the cycloaliphatic resin having an acidic group does not dissolve in tetrahydrofuran, use chloroform or cyclohexane.
- the upper limits of the index C1 and the index C2 are not particularly limited, but are generally 100,000 or less, preferably 500,000 or less, more preferably 300,000 or less. It is preferably 150 or less.
- the upper limit of the index C 1 is often around 100,000.
- the upper limit of the index C 2 is often around 500.
- Index C 1 and Index C 2 (hereinafter sometimes collectively referred to as “index C i J”) Alicyclic resin having an acidic group that satisfies the above-mentioned conditions has low solubility in Al developing solution. Therefore, the resin film obtained by using the radiation-sensitive resin composition containing the alicyclic olefin resin having such an acidic group has the same characteristics as the active radiation-irradiated part. The difference in solubility between the unirradiated portion and the developer is sufficiently large, and a good resolution and residual film ratio can be obtained.
- An alicyclic resin having an acidic group having an index C i in the range described above was obtained.
- the index C i the weight average molecular weight, the average number of carbon atoms per structural unit, the mole% of acidic groups in all structural units, and the molecular weight distribution, which are elements of the formulas (1) and (2), for which the index C i is calculated It can be controlled by the production conditions of the alicyclic resin having an acidic group.
- the molecular weight distribution of the alicyclic resin having an acidic group is a dispersity represented by a weight average molecular weight Z number average molecular weight (Mw / M n).
- the number average molecular weight is a value in terms of polystyrene measured by GPC as in the case of the weight average molecular weight.
- the weight-average molecular weight is usually 50,000 to 200,000, and preferably 100, in terms of excellent properties such as low dielectric constant, low water absorption, solvent resistance, resolution, remaining film ratio, and pattern shape. It is from 0 to 1500, more preferably from 10000 to less than 10000. Therefore, it is most preferable to use an alicyclic olefin having an acidic group having a weight average molecular weight to which the formula (1) is applied.
- the method for controlling the weight average molecular weight is not particularly limited, and for example, a method using a molecular weight modifier described later may be employed. Further, a plurality of types of resins having different weight average molecular weights may be mixed, and the weight average molecular weight of the mixed resin may be adjusted to a target weight average molecular weight.
- the method for controlling the molecular weight distribution is not particularly limited.
- the molecular weight distribution is 3.3 or less, preferably 3.0 or less, more preferably 2.5 or less, and particularly preferably 2.0 or less.
- a known catalyst is used to adjust reaction conditions such as temperature and time, or an organic ruthenium compound having a neutral electron-donating ligand described later is used as a main component.
- the method of ring-opening polymerization using the catalyst described above is suitably adopted.
- the average number of carbon atoms is calculated by the sum of the product of the number of carbon atoms other than the carbon atoms constituting the acidic group and the ratio of each structural unit contained in each structural unit constituting the resin.
- the ratio of each structural unit is a value (mol) based on 1 mol of the total of the structural units constituting the resin. Therefore, for example, in the case of a resin in which the structural unit (I) having 12 carbon atoms and the structural unit (II) having 6 carbon atoms excluding the carbon constituting the polar group exist in a molar ratio of 1: 1.
- the ratio of the acidic group is the ratio (mol%) of the structural unit having the acidic group to all the structural units.
- the method for controlling the average number of carbon atoms and the ratio of acidic groups is not particularly limited, and may be performed, for example, by adjusting the type and amount of a monomer used in producing a resin.
- the (A) alicyclic olefin resin having an acidic group used in the present invention is a polymer having a structural unit derived from an alicyclic structure-containing olefin monomer (hereinafter, referred to as an “alicyclic olefin monomer”). It is.
- the polymer may contain a structural unit other than a structural unit derived from an alicyclic olefin monomer.
- the acidic group may be any group capable of generating a proton in water, and specific examples thereof include a phenolic hydroxyl group, a carboxyl group (that is, a hydroxycarbonyl group), a dicarboxylic anhydride residue, a sulfonic acid residue, and phosphorus.
- Acid residues and the like a carboxyl group and a dicarboxylic anhydride residue are preferred.
- Such an acidic group may be present in a structural unit derived from an alicyclic olefin monomer, or may be present in a structural unit other than a structural unit derived from an alicyclic olefin monomer.
- the proportion of acid groups, and the low dielectric constant of the resin is obtained, since the easy to control the solubility in an alkali developing solution of the resin, usually 2 0-8 0 mole 0/0, preferably 3 0-7 5 mole 0/0, more preferably 3 0-7 0 mol 0/0.
- the alicyclic resin having an acidic group may have a polar group other than the acidic group, such as a hydroxyl group or an ester group.
- the alicyclic structure contained in the alicyclic olefin monomer may be monocyclic or polycyclic (condensed polycyclic, bridged ring, combination of these, etc.). From the viewpoints of mechanical strength and heat resistance, it is preferably polycyclic. Although the number of carbon atoms constituting the alicyclic structure is not particularly limited, it is usually in the range of 4 to 30, preferably 5 to 20, more preferably 5 to 15, Thereby, various properties such as heat resistance and pattern formability are highly balanced.
- the proportion of the structural unit derived from the alicyclic olefin monomer in the alicyclic olefin resin is appropriately selected according to the purpose of use, but is usually 30 to 100% by weight, preferably 50 to 10% by weight. 0% by weight, more preferably in the range of 70 to 100% by weight. If the proportion of the structural unit derived from the alicyclic olefin monomer is too small, the heat resistance is poor, which is not preferable.
- the alicyclic olefin resin examples include a ring-opening (co) polymer of an ⁇ alicyclic olefin monomer and a hydrogenated product thereof, (ii) an addition (co) polymer of an alicyclic olefin monomer, iii) an addition copolymer of an alicyclic olefin monomer and a bull compound, (iv) a monocyclic cycloalkene (co) polymer, (V) an alicyclic * diazine (co) polymer, (vi) At least one resin selected from the group consisting of a butyl-based alicyclic hydrogen (co) polymer and a hydrogenated product thereof, and (vii) an aromatic olefin (co) polymer having an aromatic ring hydrogenated product may be mentioned. Can be.
- alicyclic olefin resin a hydrogenated product of a ring-opening (co) polymer of an alicyclic olefin monomer is preferable.
- the alicyclic resin is more preferably a hydrogenated product of a ring-opening (co) polymer of a norbornene-based monomer.
- norbornene-based monomer tetracyclododecenes described later are preferable.
- the alicyclic resin having an acidic group can be synthesized by modifying the alicyclic resin with a compound having an acidic group.
- an alicyclic olefin resin having an acidic group is an addition copolymer of an alicyclic olefin monomer having an acidic group and an alicyclic olefin monomer having no acidic group, and a ring-opening copolymer. It can be synthesized as a union or a hydrogen additive thereof.
- an alicyclic olefin resin having an acidic group includes an alicyclic olefin monomer having an ester group such as a methoxycarbol group and a monomer having no ester group as necessary (for example, It can be synthesized by hydrolyzing a copoly (co) polymer, a ring-opening (co) polymer, or a hydrogenated product thereof with a cyclic olefin monomer or a vinyl monomer.
- polymerization both polymerization and copolymerization will be referred to as “polymerization”
- both the polymer and the copolymer will be described. It is described as “polymer”.
- the method for obtaining the alicyclic olefin resin having an acidic group is not particularly limited.
- a monomer capable of being copolymerized with an alicyclic olefin monomer having no acidic group may be used.
- Unsaturated carboxylic acid compounds such as heptose 5-ene-1,2,3-dicarboxylic acid, esters or amides thereof; maleic anhydride, maleic anhydride, buturic succinic anhydride, It can be synthesized by the method (I) of modifying with an acidic group-containing compound such as an unsaturated carboxylic anhydride such as tetrahydrophthalic anhydride or citraconic anhydride.
- the alicyclic olefin resin having an acidic group can be obtained by a method ( ⁇ ) in which an alicyclic olefin monomer having no acidic group is copolymerized with an alicyclic olefin monomer having an acidic group.
- the type of polymerization includes addition polymerization and ring-opening polymerization, and after polymerization, hydrogenation may be performed if necessary.
- the alicyclic olefin resin having no acidic group aromatic resins such as styrene, ⁇ -methinolestyrene, di-no-le-benzene, bininole-naphthalene, and vinyl / leto / leene are used.
- An aromatic ring of a polymer obtained by addition polymerization of olefin may be hydrogenated to form a structural unit identical to a structural unit derived from an alicyclic olefin monomer.
- the alicyclic olefin resin may be obtained by copolymerizing an alicyclic olefin monomer and a monomer copolymerizable therewith.
- a copolymerizable monomer having an acidic group if used, an alicyclic resin having an acidic group can be directly obtained.
- an alicyclic olefin having no polar group is used.
- the monomer and the alicyclic olefin monomer having a polar group are subjected to ring-opening metathesis copolymerization, and if necessary, the substituent is further modified by hydrolysis or the like to obtain an alicyclic olefin resin having a narrow molecular weight distribution.
- the catalyst used in this method is a catalyst mainly composed of an organic ruthenium compound to which a neutral electron-donating ligand is coordinated.
- the neutral electron donating ligand constituting the organic ruthenium compound is a ligand having a neutral charge when separated from the central metal ruthenium.
- a compound in which an anionic ligand having a negative charge when separated from ruthenium can be used.
- a counter anion may be present, and an anion that forms an ion pair with a ruthenium cation may be included as a counter ion.
- Examples of the alicyclic olefin monomer having no acidic group include bicyclo [2.2.1] hept-2-ene (common name: norbornene) and 5-methyl-bicyclo [2.2.1] heptone. 2-ene, 5,5-dimethyl-bicyclo [2.2.1] heptoh 2-ene, 5-ethyl-bicyclo [2.2.1] hept-2-ene, 5-butyl-bicyclo [2 2.1) Heptot-2-ene, 5-hexyl-1-bicyclo [2.2.1] Hept-12-ene, 5-octyl-bicyclo [2.2.1] Hept-2-ene , 5-octadecyl-bicyclo [2.2.1] heptoe 2-ene, 5-ethylidene-d-bicyclo [2.2.1] hept-12-ene, 5-methylidene-bicyclo [2.2] 1] Hept-1-ene, 5-vinyl-1-cyclo [
- I 11 '. 14 0 2' 8 Tetoradeka 3, 5, 7, 12 1 1 tetraene (also known as 1, 4-methano one 1, 4 , 4 a, 5, 10, 10 hexa hydro anthracenyl down to a _), tetracyclo [4. 4. 0. I 2 '5 I 7.' 10] Dodeka 3- E emissions (trivial name: tetracyclododecene ), 8-Methyl-tetracyclo [4. 4. 0. I 2 ' 5. I 7 ' 10 ] Dode force 3-ene, 8-ethyl-tetracyclo [4. 4. 0. I 2 ' 5.
- I 7 ' 10 dode 3-one, 8-hydroxycanoleponyl tetracyclo [4. 4. 0. I 2 ' 5.
- I 7 '10] dodecane force one 3-E down, 8-cyclopentyl rule tetracyclo [4. 4. 0. I 2' 5 .
- I 7 '10] dodecane force one 3-E down, 8- Cyclohexinole-tetracyclo [4. 4. 0. I 2 ' 5.
- I 7 ' 10 Dodeca 3-ene, 8-cyclohexenyl-tetracyclo [4. 4. 0. I 2 ' 5.
- I 7 '10] Dodeka 3 E down, 8-phenylene Rutetora cyclo [4. 4. 0. I 2' 5 .
- Examples of alicyclic olefin monomers having a hydroxycarboxy group as an acidic group include 5-hydroxycarbonylbicyclo [2.2.1] heptoh-2-ene and 5-hydroxycarbonylmethylbicyclo [2.2.1].
- I 3 '6 I 10.' 13 0 2 '7 0 9.' 14.] Heputadeka 4 - E down, Kisashikuro to 1 1-methyl-1 1-hydroxycarboxylic carbonyl [6 . 6. 1. I 3 '. 6 110. 13 02. 7 o 9' 14] heptadeca one 4-E down, 1 l Mechinore - 1 1, Kisashikuro [6.6.1 to 12-dihydroxy Kano levo sulfonyl . I 3 '6. 1 1 0, 1 3. 0 2. 7 o 9' 14] Heputadeka 4 E down, 1 l-hydroxy carbonylation Lou Kisashikuro to 1 1-hydroxycarbonylmethyl [6. 6. 1. I 3 '6 1 10.' 1 3 0 2. 7 0 9 ' Putadesen derivative conductor 1 Tsu to f Kisashikuro such heptadeca _ 4 E emissions; etc. Can be mentioned.
- Examples of the alicyclic olefin monomer having a dicarboxylic anhydride residue bonded as an acidic group include bicyclo [2.2.1] hept-2-ene-5,6-dicarboxylic anhydride and 5-methylbicyclo [2.2.1] Heputo 2 E down one 5, bicycloheptene derivatives such as 6-dicarboxylic anhydride, tetracyclo [4. 4. 0. I 2 '5 . I 7' 10] Dodeka 3 E down one 8, 9-dicarboxylic acid anhydride, 8 Mechirutetorashi black [4. 4. 0. I 2 '5 .
- the alicyclic olefin monomers can be used alone or in combination of two or more.
- Monomers that can be copolymerized with the alicyclic olefin monomer include ethylene, propylene, 1-butene, 1-pentene, 1-hexene, 3-methylene / l-butene, 3-methylenol 1 —Pentene, 3-—Echinolene 1—Pentene, 4-Methynole 1—Pentene, 4-Methynole 1—Hexene, 4,4-Dimethinole 1—Hexene, 4,4—Dimethyl 1—Pentene, 4-Echinaci 1 —Hexene, 3-ethyl-11-hexene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene, 1-hexadecene, 1-octadecene, 1-eicosene, etc.
- Ethylene or ⁇ -olefin Ethylene or ⁇ -olefin; non-conjugated dienes such as 1,4-hexadiene, 4-methyl-1,4-hexadiene, 5-methyl-1,4-hexadiene and 1,7-octadiene And the like.
- These monomers can be used alone or in combination of two or more.
- a molecular weight modifier such as a bullet compound or a gen compound is added to the total amount of the monomer.
- a method of adding about 1 to 10 mol% is exemplified. When the amount of the molecular weight modifier used is small, a polymer having a relatively high weight average molecular weight is obtained, and when it is large, a polymer having a relatively low weight average molecular weight is obtained.
- Vinyl compounds used as molecular weight regulators include c-olefin compounds such as 1-butene, 11-pentene, 1-hexene and 1-octene; styrene compounds such as styrene and vinyltoluene; Ether compounds such as sodium butynyl vinyl ether and aryl daricidyl ether; halogen compounds such as aryl chloride; oxygen-containing compounds such as aryl acetate, aryl alcohol and glycidyl methacrylate; acrylamide and the like A nitrogen-containing vinyl compound; Examples of the gen compounds include 1,4-pentagen, 1,5-hexadiene, 1,6-hexadiene, 2-methynole-1,4-pentadiene, and 2,5-dimethyl-1,5-hexadiene.
- Non-conjugated diene compounds such as 1,3-butadiene, 2-methyl-1,3-butadiene, 2,3-dimethyl-1,3-butadiene, 1,3-pentadiene, 1,3-hexadiene ; Of these, ⁇ -olefin compounds such as 1-hexene are particularly preferred.
- Examples of the alicyclic olefin resin obtained using such a monomer include a ring-opened polymer of an alicyclic olefin monomer and a hydrogenated product thereof, and an addition polymer of an alicyclic olefin monomer.
- Aromatic olefin polymer aromatic ring hydrogenated is preferred
- a hydrogenated product of a ring-opened polymer of an alicyclic olefin monomer is preferred.
- the alicyclic resin may be used alone or in combination of two or more.
- the acid generator (B) used in the present invention is a compound that generates an acid upon irradiation with actinic radiation.
- a compound having a weakly acidic group such as a carboxyl group or a phenolic hydroxyl group is preferable, and a compound such as a quinonediazidesulfonic acid ester compound is particularly preferable.
- Compounds that generate an acid by a suitable carboxyl group are preferred.
- the method for producing the quinonediazide sulfonic acid ester compound is not particularly limited, and is carried out according to a conventional method.
- the esterification rate of the quinonediazidesulfonic acid ester compound is defined by the ratio of the hydrogen atom of the phenolic hydroxyl group of the phenolic compound to the quinonediazidesulfonic acid residue.
- the esterification rate is usually 20 to 100 mol. / 0, favored properly 4 0-1 0 0 mole 0/0, more preferably 5 0-1 0 0 mole 0/0, most preferably rather 6 0-1 0 0 mol%. If the esterification ratio is too low, the effect of suppressing the dissolution of the unexposed portions (unirradiated portions) is low, and the resolution and the residual film ratio are likely to decrease.
- Examples of the acid generator include ionic salts such as diaryldonium salts, triarylsulfonium salts, and phenyldiazonium salts, imidosulfonate derivatives, tosylate compounds, carbonate compounds of benzyl derivatives, and triazine derivatives.
- ionic salts such as diaryldonium salts, triarylsulfonium salts, and phenyldiazonium salts, imidosulfonate derivatives, tosylate compounds, carbonate compounds of benzyl derivatives, and triazine derivatives.
- Halogenated organic halogen compounds ⁇ , ⁇ '- bis (sulfonyl) diazomethane compound, ⁇ -carbonyl-ct-sulfonyldiazomethane compound, sulfone compound, organic phosphorus ester compound, organic acid amide compound,
- a compound that generates a relatively strong acid, such as an organic imide compound, can be
- the amount of the acid generator is usually 0.5 to 100 parts by weight, preferably 1 to 50 parts by weight, more preferably 10 to 100 parts by weight, based on 100 parts by weight of the alicyclic resin having an acidic group. To 30 parts by weight. If the amount of the acid generator is too small, the residual film ratio and the resolution may be deteriorated. Conversely, if the amount is too large, the heat resistance and the light transmittance may be reduced.
- the crosslinking agent of the component (C) used in the present invention has an action of forming a crosslinked structure between the alicyclic olefin resins by reacting with the alicyclic olefin resin.
- a compound having a reactive group of Examples of the reactive group include an amino group, a carboxyl group, a hydroxyl group, an epoxy group, an isocyanate group, and a butyl group.
- crosslinking agent examples include aliphatic polyamines such as hexamethylene diamine; aromatic polyamines such as 4,4'-diaminodiphenyl ether and diaminodiphenyl sulfone; 2,6-bis (4 ' Azidobenzal) Azide compounds such as cyclohexanone, 4,4'-diazidodiphenylsulfone; polyamides such as nitrobenzene, polyhexamethylene diamine terephthalamide, and polyhexamethylene isophthalamide; N, N, ⁇ ', N ', N r, melamines such as melamine (hexa ⁇ Bruno record carboxymethyl into) one; ⁇ , ⁇ ', ⁇ , ⁇ - Darikoruuriru such (tetra- alkoxymethyl) glycol ⁇ Lil Attalays such as ethylene glycol di (meth) acrylate and epoxy acrylate resins Compounds; isocyan
- N-alkoxymethylated melamine ⁇ N-alkoxymethylated glycoluril is preferred from the viewpoint of heat resistance.
- These compounds are PL-117, PL-117, UFR65, CYMEL300, CYMEL303 (all manufactured by Mitsui Cytec), BX-400. It is easily available as a commercial product such as 0, 2-stroke rack MW-30, MX290 (above, manufactured by Sanwa Chemical Co., Ltd.). From the viewpoint of improving the adhesion of the resin film formed from the radiation-sensitive resin composition to a substrate or the like, it is preferable to use an isocyanate-based compound as the crosslinking agent.
- the amount of the crosslinking agent is usually 1 to 100 parts by weight, preferably 5 to 80 parts by weight, more preferably 10 to 70 parts by weight, and most preferably 100 to 70 parts by weight, based on 100 parts by weight of the alicyclic resin. Preferably it is 20 to 50 parts by weight. If the amount of the cross-linking agent used is too large or too small, the heat resistance, electric properties, and water absorption are likely to be insufficient.
- the solvent of the component (D) used in the present invention is suitable for dissolving or dispersing the above-mentioned components, and those generally used as a solvent for the radiation-sensitive resin composition can be used.
- a solvent include alcohols such as methanol, ethanol, propanol, butanol, 3- methoxy- 3 -methylbutanol; cyclic ethers such as tetrahydrofuran and dioxane; methyl celloso / levacetate, ethinoreseroso Cerro Seo Norev Este les such as / rev acetate, ethylene glycol Honoré mono-methylol Honoré ether Honoré, ethylene glycol mono ethyl Honoré et Tenore, ethylene glycol Honoré monopropyl ether, les, ethylene glycol Honoré mono t Petit / Leate / Le, Propylene Glycolate / Lemonoethinoleate / Le, Propylene Glycol Monopropy
- the radiation-sensitive resin composition of the present invention contains a nonionic surfactant such as polyoxyethylene lauryl ether or polyoxyethylene dilaurate for the purpose of preventing striation (after coating streaks) and improving developability; Fluorinated surfactants, such as Shin-Akita Kaseisha's EFTOP series, Dainippon Ink and Chemicals' Megafac series, Sumitomo 3LEM's Florado series, and Asahi Glass's Asahiguard series; Various surfactants, such as silane-based surfactants such as V-Leganosiloxane Polymer II series; acrylic acid copolymer-based surfactants such as Polyflow series manufactured by Kyoeisha Yushi Kagaku Kogyo Co., Ltd .; The surfactant is used in an amount of 100 parts by weight based on the solid content (components other than the solvent) of the radiation-sensitive resin composition. Usually, it is used in an amount of 2 parts by weight or
- the radiation-sensitive resin composition of the present invention may be added with a functional silane coupling agent such as ⁇ -glycidoxypropyltrimethoxysilane as an adhesion aid for the purpose of improving the adhesion to the substrate.
- a functional silane coupling agent such as ⁇ -glycidoxypropyltrimethoxysilane
- the amount of the adhesion promoter is usually 20 parts by weight or less, preferably 0.05 to 0.5 parts by weight, more preferably 1 to 0 parts by weight, based on 100 parts by weight of the alicyclic olefin resin having an acidic group. It is 10 parts by weight.
- the radiation-sensitive resin composition of the present invention may contain a sensitizer, an antistatic agent, a storage stabilizer, an antifoaming agent, a pigment, a dye, and the like, if necessary.
- the components described above are mixed according to a conventional method, and dissolved or dispersed in a solvent to prepare a radiation-sensitive resin composition.
- the solid concentration of the prepared radiation-sensitive resin composition of the present invention is not particularly limited, but is usually 5 to 40% by weight.
- the prepared radiation-sensitive resin composition is preferably a homogeneous solution.
- a filter or the like of about 0.2 to 1 / zm to remove foreign substances and then use the composition. Is preferred.
- the radiation-sensitive resin composition of the present invention can be used for a device such as a display device or an integrated circuit device, a protective film such as a color filter for a liquid crystal display, a flattening film for flattening the device surface or wiring, and an electric insulating property.
- a protective film such as a color filter for a liquid crystal display
- a flattening film for flattening the device surface or wiring
- an electric insulating property e.g., resin films for electronic components, such as insulating films (for example, including interlayer insulating films and solder resist films, which are electric insulating films for thin transistor-type liquid crystal display devices and integrated circuit devices) to maintain It is suitable as.
- the radiation-sensitive resin composition of the present invention is applied on a substrate to form a resin film, and active radiation is irradiated in a pattern from above the resin film to form a latent image pattern on the resin film.
- active radiation is irradiated in a pattern from above the resin film to form a latent image pattern on the resin film.
- the method for forming a resin film on a substrate is a method in which the radiation-sensitive resin composition of the present invention is applied to the surface of the substrate and dried to form a resin film directly on the substrate.
- the radiation-sensitive resin composition of the present invention is applied to at least one surface of a support such as a resin film such as a resin film, a polypropylene film, or a polyethylene film, and dried to form a resin film on the support.
- a method may be used in which a resin film with a coating is overlaid on a substrate.
- the resin film with the support is superimposed on the substrate, it is preferable to heat and press using a pressing machine such as a pressure laminator, a pressure press, a vacuum laminator, a vacuum press, and a roll laminator.
- a pressing machine such as a pressure laminator, a pressure press, a vacuum laminator, a vacuum press, and a roll laminator.
- the temperature at the time of heat compression is usually 30 to 250 ° C, preferably 70 to 200 ° C
- the compression force is usually 10 kPa to 20 MPa, preferably 1 OO kPa to OMPa
- the compression time is usually The duration is 30 seconds to 5 hours, preferably 1 minute to 3 hours.
- it is desirable to adjust the pressure of the atmosphere to usually 10 OkPa to 1 Pa, preferably 40 kPa to 10 Pa.
- the obtained coating film is dried by heating to obtain a lusterless film having no fluidity.
- the heating conditions for forming the resin film directly on the substrate surface vary depending on the type and blending ratio of each component, but are usually about 60 to 120 ° for about 10 to 600 seconds.
- heating for drying is generally performed using a pre-baking method.
- the obtained resin film is irradiated with actinic radiation to form a latent image pattern on the resin film.
- actinic radiation is not particularly limited, and examples thereof include ultraviolet rays, far ultraviolet rays, X-rays, electron beams, and proton beam rays. Of these, visible rays and ultraviolet rays are preferable.
- the radiation dose for irradiation can be arbitrarily set depending on the type and thickness of the resin film.
- the pattern may be formed by a method of irradiating actinic radiation through a mask or a method of directly drawing with an electron beam or the like.
- the exposed part is removed by bringing the luster film having the latent image pattern on the substrate into contact with the developing solution, and the latent image pattern is revealed (developed).
- PEB treatment Post Ex posure Bake
- the PEB treatment development residues such as unnecessary resin components which should be dissolved and removed in the developer can be reduced.
- the alicyclic resin has an alkali-soluble polar group, particularly an acidic group, because the outflow by the developer becomes easier.
- the developer is generally an aqueous solution in which an alkali compound is dissolved in water.
- alkali compound include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia; and primary amines such as ethylamine and n-propylamine. Secondary amines such as getylamine and di-n-propylamine; tertiary amines such as triethylamine, methylethylamine and ⁇ -methylpyrrolidone; alcoholamines such as dimethylethanolamine and triethanolamine; tetramethylamine.
- inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia
- primary amines such as ethylamine and n-propylamine. Secondary amines such as getylamine and di-n-propylamine;
- Quaternary ammonium salts such as ammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, and choline; pyrrole, pyridin, 1,8-diazabicyclo [5.4.0 ] 7-en, 1, 5-j Bicyclo [4.3.2 0] cyclic amines, such as nona one 5-E down; Hitoshigakyo is up.
- These alkali compounds can be used alone or in combination of two or more.
- a water-soluble organic solvent such as methanol or ethanol, a surfactant or the like can be added to the developer.
- the irradiated portion of the resin film formed using the radiation-sensitive resin composition is dissolved at a rate of 1 ⁇ min or more, and the unirradiated portion of the resin film is dissolved at a rate of 0.5 ⁇ min or less. It is preferable to dissolve it, so that particularly excellent resolution and residual film ratio can be obtained.
- the concentration is 0.01% to 1. 0 wt%, preferably 0.1 to 0.8 wt 0 It is desirable to use an aqueous solution of / 0 tetramethylammonium hydroxide.
- the development time is usually 30 to 180 seconds.
- the method of contacting the developer with the resin film having a latent image pattern is not particularly limited, and for example, a paddle method, a spray method, a dipping method, or the like can be employed.
- the development temperature is not particularly limited, it is usually 15 to 35, preferably 20 to 30 :.
- a resin film having a target pattern is formed on the substrate.
- the substrate and the rinsing liquid are brought into contact with each other in a usual manner to remove unnecessary development residues remaining on the substrate, the back surface of the substrate, and the edge of the substrate. be able to.
- the substrate in contact with the rinsing liquid is usually dried with compressed air or compressed nitrogen to remove the rinsing liquid on the substrate. If necessary, the entire surface of the patterned resin film can be irradiated with actinic radiation.
- the resin film can be cured by heating (postbaking: Postbak) if necessary.
- the heating method is performed by a heating device such as a hot plate and an oven.
- the heating temperature is usually 150 to 250, preferably 180 to 220.
- the heating time is, for example, when using a hot plate, usually 5 to 60 minutes, when using an oven. Usually, it is 30 to 90 minutes.
- Post baking is preferably performed in a low-oxygen atmosphere, specifically, an atmosphere having an oxygen concentration of 10 ppm or less.
- a resin film is formed on a substrate using the radiation-sensitive resin composition of the present invention, and active radiation is irradiated in a pattern from above the resin film to form a latent image pattern on the resin film. Then, a pattern is formed on the resin film by a pattern forming method in which the pattern is exposed by bringing the resin film into contact with a developer.
- the resin film on which the pattern is formed is suitably used as a resin film for electronic components such as a protective film, a planarizing film, and an interlayer insulating film.
- reaction solution was poured into a large amount of n-hexane to precipitate a solid.
- the obtained solid was washed with n-hexane and dried under reduced pressure at 100 ° C. for 18 hours to obtain a ring-opening metathesis copolymer as a white solid.
- polymer g An alicyclic olefin resin having an acid group having a hydrogenation rate of 100% and a hydrolysis rate of 75% (polymer g) was prepared in the same manner as in Synthesis Example 5 except that the polymerization holding temperature was changed from 1103 ⁇ 4 to 90. ).
- Table 1 shows the physical properties of the polymers a to i obtained in the above synthesis examples.
- TCDC 8-hydroxycarbonyltetracyclo [4. 4. 0. I 2 ' 5. 17 ' 1 °] Repeating unit derived from 3-hydroxy
- T CD Tetracyclo [4. 4. 0. I 2 ' 5. I 7 ' 10 ] Repeat unit derived from 3-Dene
- TCDE 8-methyl-8-main Tokishikarubo two Rutetorashikuro [4. 4. 0. 1 2 '. 5 I 7' 10] dodecane force one 3-E emissions from repeating units.
- This solution was spin-coated on a silicon substrate, a glass substrate, and a silicon oxide film substrate with a step of 1 / zm (hereinafter referred to as “stepped substrate”), and then hot-plated at 9 for 2 minutes.
- stepped substrate a silicon oxide film substrate with a step of 1 / zm
- a mask having a predetermined pattern was placed on the obtained silicon substrate with a coating film, and irradiated with ultraviolet light having a wavelength of 365 nm and a light intensity of 5 mW cm 2 in air for 40 seconds.
- development processing was performed at 25 for 60 seconds using a 0.3% aqueous solution of tetramethylammonium. Thereafter, rinsing treatment was performed for 1 minute with ultrapure water to form a thin film having a positive pattern.
- the silicon substrate, glass substrate, and silicon oxide film substrate with a 1 ⁇ step formed with this pattern were each heated on a hot plate at 200 ° C for 30 minutes to obtain a post-base of the pattern and coating film. Then, a silicon substrate, a glass substrate, and a stepped substrate on which a pattern-like thin film was formed were obtained.
- Polymer b (Example 2), polymer c (Example 3), polymer d (Example 4), polymer e (Example 5), polymer f (Example 6), polymer 1 g instead of polymer a
- a silicon substrate, a glass substrate, and a stepped substrate on which a patterned thin film was formed were obtained in the same manner as in Example 1 except that (Example 7) was used.
- Each of the silicon substrates obtained above had a film thickness after heating in an oven at 220 ° C for 60 minutes of 95% or more of the film thickness before heating, and was confirmed to be excellent in heat-resistant dimensional stability.
- Each of the glass substrates obtained above was analyzed using a UV-visible-near-infrared spectrophotometer (V-570) manufactured by JASCO Corporation, and the minimum light transmittance (t) at a wavelength of 400 to 800 nm was 90%. %, which was excellent, and it was confirmed that the transparency was excellent.
- V-570 UV-visible-near-infrared spectrophotometer
- each of the stepped substrates obtained above was less than 0.1 / zm, and it was confirmed that the substrates had high flatness.
- the relative dielectric constant ( ⁇ ) at 1 MHz (room temperature) was measured according to JIS C 6481 and evaluated according to the following criteria.
- the water absorption (w) was measured according to JIS C6481, and evaluated according to the following criteria. A: w ⁇ 0.05%,
- the glass substrate on which the patterned thin film was formed was immersed in dimethyl sulfoxide at 70 ° C for 30 minutes, and the film thickness change rate (S) was measured and evaluated according to the following criteria.
- the film thickness after development (film thickness before development) X I 00 was defined as the residual film ratio (R), and evaluated according to the following criteria.
- Pattern shape The cross section of the line and space after pattern jung was observed with a scanning electron microscope, and evaluated according to the following criteria.
- A a rectangular shape with no residue derived from the radiation-sensitive resin composition and without shape collapse;
- B a slight tailing at the interface between the luster pattern and the substrate;
- the radiation-sensitive resin compositions of the present invention maintain the characteristic balance of relative dielectric constant, water absorption resistance, heat-resistant dimensional stability, flatness, and solvent resistance. It can be seen that excellent resolution, remaining film ratio, and pattern shape can be achieved while maintaining the same.
- an alicyclic resin (polymers a and b) having an acidic group having a weight average molecular weight of less than 10,000, a molecular weight distribution of 2.0 or less, and an index C1 of 600 or more is used (Examples 1 and 2). It can be seen that excellent resolution and residual film ratio can be obtained.
- the present invention it is possible to obtain a radiation-sensitive resin composition having properties suitable for forming an electrical insulating film, and also having excellent resolution, residual film ratio, and pattern shape.
- the resin film formed using the radiation-sensitive resin composition of the present invention and the resin film formed with a pattern include, for example, electronic elements such as semiconductor elements, light emitting diodes, and various memories; hybrid ICs, MCMs, and prints. It can be suitably used as a resin film for various electronic components such as an overcoat material for a wiring board; an interlayer insulating film of a multilayer circuit board; an insulating layer of a liquid crystal display.
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- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
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Abstract
A radiation-sensitive resin composition comprising an alicyclic olefin resin having acid groups, an acid generator, a crosslinking agent, and a solvent, wherein when the olefin resin has a weight-average molecular weight of less than 10000, the index C1 represented by the specific relationship (1) is 300 or above, while when it has a weight-average molecular weight of 10000 or above, the index C2 represented by the specific relationship (2) is 120 or above.
Description
明細書 感放射線性樹脂組成物及びパタ一ン形成方法 技術分野 Description Radiation-sensitive resin composition and pattern forming method
本発明は、 感放射線性樹脂組成物に関し、 さらに詳しくは、 粒子線や電子線な どの活性放射線の照射により、 アル力リ性溶液である現像液に対する溶解性が変 化する感放射線性樹脂組成物に関する。 本発明の感放射線性樹脂組成物は、 樹脂 膜を形成し、 その上に、 ホトリソグラフィ技術によりパターンを形成することが できる。 本発明の感放射線性樹脂組成物は、 保護膜、 平坦化膜、 電気絶縁膜など の電子部品用樹脂膜を形成するための樹脂材料として好適である。 背景技術 The present invention relates to a radiation-sensitive resin composition, and more particularly, to a radiation-sensitive resin composition whose solubility in a developer, which is an alkaline solution, is changed by irradiation with actinic radiation such as a particle beam or an electron beam. About things. The radiation-sensitive resin composition of the present invention forms a resin film, on which a pattern can be formed by photolithography. The radiation-sensitive resin composition of the present invention is suitable as a resin material for forming a resin film for electronic components such as a protective film, a planarizing film, and an electric insulating film. Background art
液晶表示素子、 集積回路素子、 固体撮像素子等の電子部品や、 液晶ディスプレ ィ用カラーフィルタなどには、 その劣化や損傷を防止するための保護膜、 素子表 面や配線を平坦化するための平坦化膜、 電気絶縁性を保っための電気絶縁膜など が設けられている。 また、 薄膜トランジスタ型液晶表示素子や集積回路素子に は、 層状に配置される配線の間を絶縁するために、 層間絶縁膜が設けられてい る。 Electronic components such as liquid crystal display elements, integrated circuit elements, and solid-state image sensors, and color filters for liquid crystal displays, etc. have protective films to prevent their deterioration and damage, and flatten element surfaces and wiring. A flattening film, an electric insulating film for maintaining electric insulation, and the like are provided. In addition, a thin film transistor type liquid crystal display element or an integrated circuit element is provided with an interlayer insulating film in order to insulate between wirings arranged in layers.
これらの保護膜、 平坦化膜、 眉間絶縁膜などには、 様々な機能性を有する電子 部品用樹脂膜が用いられている。 従来、 電子部品用樹脂膜を形成するための樹脂 材料としては、 エポキシ樹脂などの熱硬化性樹脂材料が汎用されていた。 A resin film for electronic components having various functions is used for the protective film, the flattening film, the inter-brows insulating film, and the like. Conventionally, a thermosetting resin material such as an epoxy resin has been widely used as a resin material for forming a resin film for electronic components.
し力 し、 従来から電子部品形成用材料として知られている熱硬化性樹脂材料を 用いると、 十分な平坦性を有する樹脂膜が得られない場合がある。 そのため、 微 細なパターユングが可能な新しい感放射線性の絶縁膜形成用樹脂材料の開発が求 められてきた。 また、 近年、 配線やデバイスの高密度化に伴い、 これらの樹脂材 料にも低誘電性が求められるようになつてきた。
このような要求に対応して、 例えば、 メトキシカルボニル基の如きエステル基 を含有するノルボルネン系単量体を開環重合し、 得られた開環重合体を水素添加 した後、 水素添加物を加水分解してエステル基部分をカルボキシル基に変換して 得られるアルカリ可溶性環状ポリオレフイン樹脂を用いた感放射線性樹脂組成物 が提案されている (特開平 1 0— 3 0 7 3 8 8号公報、 及び特開平 1 1一 5 2 5 7 4号公報)。 この感放射線性樹脂組成物は、 前記アル力リ可溶性環状ポリオレ フィン樹脂と酸発生剤 (例えば、 キノンジアジド化合物) と架橋剤とを含有する 樹脂組成物である。 より具体的に、 これらの公報では、 アルカリ可溶性環状ポリ ォレフィン樹脂としては、 8—メチル一8—メ トキシカルボニルテトラシクロ However, if a thermosetting resin material conventionally known as a material for forming electronic components is used, a resin film having sufficient flatness may not be obtained. Therefore, there has been a demand for the development of a new resin material for forming a radiation-sensitive insulating film that enables fine pattern jungling. In recent years, as the density of wirings and devices has increased, low dielectric properties have also been required for these resin materials. In response to such a requirement, for example, a norbornene-based monomer having an ester group such as a methoxycarbonyl group is subjected to ring-opening polymerization, the obtained ring-opened polymer is hydrogenated, and then the hydrogenated product is hydrolyzed. A radiation-sensitive resin composition using an alkali-soluble cyclic polyolefin resin obtained by decomposing to convert an ester group into a carboxyl group has been proposed (Japanese Patent Application Laid-Open No. 10-3073888, and Japanese Unexamined Patent Publication No. 11-5252754). This radiation-sensitive resin composition is a resin composition containing the above-described soluble polycyclic resin, an acid generator (for example, a quinonediazide compound), and a crosslinking agent. More specifically, in these publications, as the alkali-soluble cyclic polyolefm resin, 8-methyl-18-methoxycarbonyltetracyclo is used.
[ 4 . 4 . 0 . I 2' 5. 1 7' 1 0] — 3—ドデセンの開環 (共) 重合体の水素添カロ 物を加水分解してなる樹脂が用いられている。 [... 4 4 0 I 2 '5 1 7.' 1 0] - 3- dodecene ring-opening (co) polymer hydrogenated added Caro was formed by hydrolysis resin is used.
しかし、 本発明者らが検討した結果、 前記公報記載の感放射線性組成物を用い て得られる樹脂膜は、 誘電率、 吸水性、 平坦性、 透明性、 耐溶剤性、 耐熱寸法安 定性などは比較的良好であるものの、 解像度及ぴ残膜率に劣り、 しかも良好なパ ターン形状が得られ難いことが判明した。 発明の開示 However, as a result of investigations by the present inventors, a resin film obtained by using the radiation-sensitive composition described in the above publication has a dielectric constant, water absorption, flatness, transparency, solvent resistance, heat-resistant dimensional stability, and the like. Was relatively good, but it was found that the resolution and the remaining film ratio were inferior, and it was difficult to obtain a good pattern shape. Disclosure of the invention
本発明の目的は、 酸性基を有する脂環式ォレフイン樹脂、 酸発生剤、 架橋剤、 及び溶剤を含有する感放射線性樹脂組成物であって、 低誘電率、 耐熱性、 平坦 性、 透明性、 及び耐溶剤性に優れるだけではなく、 解像度及び残膜率に優れ、 し 力も良好で微細なパターン形状を与えることができる感放射線性樹脂組成物を提 供することにある。 An object of the present invention is a radiation-sensitive resin composition containing an alicyclic olefin resin having an acidic group, an acid generator, a crosslinking agent, and a solvent, and has a low dielectric constant, heat resistance, flatness, and transparency. An object of the present invention is to provide a radiation-sensitive resin composition which is not only excellent in solvent resistance and solvent resistance, but also excellent in resolution and residual film ratio, has good resilience and can give a fine pattern shape.
また、 本発明の目的は、 そのような優れた諸特性を有する感放射線性樹脂組成 物を用いて、 パターンを形成する方法を提供することにある。 Another object of the present invention is to provide a method for forming a pattern using a radiation-sensitive resin composition having such excellent properties.
さらに、 本発明の目的は、 そのようなパターンが形成された樹脂膜、 及ぴ該樹 脂膜の電子部品用樹脂膜としての利用を提供することにある。 It is a further object of the present invention to provide a resin film having such a pattern formed thereon and use of the resin film as a resin film for electronic components.
本発明者らは、 前記目的を達成するために鋭意研究した結果、 酸性基を有する
脂環式ォレフイン樹脂について、 重量平均分子量、 分子量分布、 構造単位の炭素 数、 及び酸性基の割合を特定の範囲内に制御して、 アルカリ現像液に対する溶解 性を小さくすることにより、 未照射部で強い溶解抑止効果が得られ、 その結果、 解像度、 残膜率、 及びパターン形状に優れる感放射線性樹脂組成物が得られるこ とを見出した。 本発明は、 これらの知見に基づいて完成するに到ったものであ る。 The present inventors have conducted intensive studies to achieve the above object, and as a result, have an acidic group. By controlling the weight average molecular weight, molecular weight distribution, the number of carbon atoms in the structural unit, and the ratio of acidic groups in the alicyclic resin within a specific range to reduce the solubility in an alkali developer, the unirradiated part is obtained. It was found that a strong radiation-suppressing effect was obtained with the above method, and as a result, a radiation-sensitive resin composition having excellent resolution, remaining film ratio, and pattern shape was obtained. The present invention has been completed based on these findings.
かくして、 本発明によれば、 (A) 酸性基を有する脂環式ォレフイン樹脂、 (B) 酸発生剤、 (C) 架橋剤、 及び (D) 溶剤を含有する感放射線性樹脂組成 物において、 (A) 酸性基を有する脂環式ォレフイン系樹脂が、 その重量平均分 子量が 10000未満である場合には、 下記式 (1) Thus, according to the present invention, there is provided a radiation-sensitive resin composition comprising (A) an alicyclic resin having an acidic group, (B) an acid generator, (C) a crosslinking agent, and (D) a solvent. (A) When the weight average molecular weight of the alicyclic olefin resin having an acidic group is less than 10,000, the following formula (1)
(MW)05X(AC)7 (MW) 05 X (AC) 7
C 1 = X 105 (1) C 1 = X 10 5 (1)
(AG)6X(MWD)2 (AG) 6 X (MWD) 2
(式中、 MWは、 重量平均分子量であり、 ACは、 構造単位当たりの平均炭素数 であり、 AGは、 全構造単位中の酸性基のモル数であり、 MWDは、 分子量分布 である。 ) (Where MW is the weight average molecular weight, AC is the average number of carbon atoms per structural unit, AG is the number of moles of acidic groups in all structural units, and MWD is the molecular weight distribution. )
で表わされる指数 C 1が 300以上を示し、 重量平均分子量が 10000以上で ある場合には、 下記式 (2) If the index C 1 is 300 or more and the weight average molecular weight is 10,000 or more, the following formula (2)
(MW)05X(AC)2 (MW) 05 X (AC) 2
C 2= X 103 (2) C 2 = X 10 3 (2)
(AG)2X (MWD)3 (AG) 2 X (MWD) 3
(式中の各符号の意味は、 式 (1)におけるのと同じである。 ) (The meaning of each symbol in the formula is the same as in formula (1).)
で表わされる指数 C 2が 120以上を示すものであることを特徴とする感放射線 性樹脂組成物が提供される。 The radiation-sensitive resin composition is characterized in that the index C 2 represented by the formula (1) is 120 or more.
また、 本発明によれば、 該感放射線性樹脂組成物を用いて、 基板上に樹脂膜を 形成し、 該樹脂膜の上からパターン状に活性放射線を照射して、 樹脂膜に潜像パ
ターンを形成し、 次いで、 樹脂膜と現像液とを接触させることによりパターンを 顕在化させるパターン形成方法が難される。 Further, according to the present invention, a resin film is formed on a substrate using the radiation-sensitive resin composition, and active radiation is irradiated in a pattern from above the resin film to form a latent image on the resin film. It is difficult to form a pattern by forming a turn and then bringing the resin film into contact with a developer to make the pattern visible.
さらに、 本発明によれば、 前記方法によりパターンが形成された樹脂膜、 及び 該樹脂膜の電子部品用樹脂膜としての利用が提供される。 発明を実施するための最良の形態 Further, according to the present invention, there are provided a resin film on which a pattern is formed by the above method, and use of the resin film as a resin film for an electronic component. BEST MODE FOR CARRYING OUT THE INVENTION
本発明の感放射線性樹脂組成物は、 (A) 酸性基を有する脂環式ォレフイン樹 脂、 (B) 酸発生剤、 (C) 架橋剤、 及び (D) 溶剤を含有するものである。 本 発明の感放射線性樹脂組成物では、 酸性基を有する脂環式ォレフイン系樹脂とし て、 その重量平均分子量が 10000未満である場合には、 下記式 (1) The radiation-sensitive resin composition of the present invention contains (A) an alicyclic resin having an acidic group, (B) an acid generator, (C) a crosslinking agent, and (D) a solvent. In the radiation-sensitive resin composition of the present invention, when the weight average molecular weight of the alicyclic resin having an acidic group is less than 10,000, the following formula (1)
(MW)°"5X(AC)7 (MW) ° " 5 X (AC) 7
C 1 = X 105 (1) C 1 = X 10 5 (1)
(AG)6X (MWD)2 (AG) 6 X (MWD) 2
(式中、 MWは、 重量平均分子量であり、 ACは、 構造単位当たりの平均炭素数 であり、 AGは、 全構造単位中の酸性基のモル数であり、 MWDは、 分子量分布 である。 ) (Where MW is the weight average molecular weight, AC is the average number of carbon atoms per structural unit, AG is the number of moles of acidic groups in all structural units, and MWD is the molecular weight distribution. )
で表わされる指数 C 1が 300以上を示し、 重量平均分子量が 10000以上で ある場合には、 下記式 (2) If the index C 1 is 300 or more and the weight average molecular weight is 10,000 or more, the following formula (2)
(MW)°-5X(AC)2 (MW) ° - 5 X ( AC) 2
C 2= X 103 (2) C 2 = X 10 3 (2)
(AG)2X(MWD)3 (AG) 2 X (MWD) 3
(式中の各符号の意味は、 式 (1)におけるのと同じである。 ) (The meaning of each symbol in the formula is the same as in formula (1).)
で表わされる指数 C 2が 120以上を示すものを使用する。 An index having an index C 2 of 120 or more is used.
指数 C 1は、 300以上、 好ましくは 400以上、 より好ましくは 500以 上、 特に好ましくは 600以上である。 指数 C 2は、 120以上、 好ましくは 1 50以上、 より好ましくは 200以上、 特に好ましくは 250以上である。
重量平均分子量、 構造単位当たりの平均炭素数 (以下、 単に 「平均炭素数」 と いう) 、 全構造単位中の酸性基のモル% (以下、 酸性基割合という)、 及び分子 量分布は、 酸性基を有する脂環式ォレフイン樹脂のアル力リ現像液に対する溶解 性に影響を及ぼす要素である。 本発明者らは、 酸性基を有する脂環式ォレフイン 樹脂の重量平均分子量が 1 0 0 0 0を境に、 これらの要素のアル力リ現像液に対 する溶解性に与える影響の度合いが異なることを見出した。 The index C1 is 300 or more, preferably 400 or more, more preferably 500 or more, and particularly preferably 600 or more. The index C2 is at least 120, preferably at least 150, more preferably at least 200, particularly preferably at least 250. Weight average molecular weight, average number of carbons per structural unit (hereinafter simply referred to as “average carbon number”), mol% of acidic groups in all structural units (hereinafter referred to as “acidic group ratio”), and molecular weight distribution This is an element that affects the solubility of the alicyclic resin having a group in an alkaline developer. The present inventors differ in the degree of influence of these elements on solubility in an alkaline developer when the weight average molecular weight of the alicyclic resin having an acidic group is 100,000. I found that.
本発明においては、 酸性基を有する脂環式ォレフイン樹脂のアルカリ現像液へ の溶解性を、 重量平均分子量が 1 0 0 0 0未満である場合を式 (1 ) で表される 指数 C l、 重量平均分子量が 1 0 0 0 0以上である場合を式 (2 ) で表される指 数 C 2により判断する。 In the present invention, the solubility of an alicyclic olefin resin having an acidic group in an alkali developing solution is determined by an index C l represented by the formula (1) when the weight average molecular weight is less than 1000, The case where the weight average molecular weight is 1000 or more is determined by the index C2 represented by the formula (2).
本発明において重量平均分子量は、 テトラヒドロフランを溶媒とするゲル 'パ 一ミエーシヨン .クロマトグラフィー (G P C) により測定されたポリスチレン 換算値であり、 1 0の位を四捨五入した値を有効数字とする。 酸性基を有する脂 環式ォレフイン樹脂がテトラヒドロフランに溶解しない場合は、 クロ口ホルムま たはシクロへキサンを用いる。 In the present invention, the weight average molecular weight is a value in terms of polystyrene measured by gel permeation chromatography (GPC) using tetrahydrofuran as a solvent, and the value rounded off to the nearest 10 is an effective figure. If the cycloaliphatic resin having an acidic group does not dissolve in tetrahydrofuran, use chloroform or cyclohexane.
指数 C 1及ぴ指数 C 2の上限は、 いずれも特に制限されるものではないが、 通 常 1 0 0 0 0以下、 好ましくは 5 0 0 0以下、 より好ましくは 3 0 0 0以下、 特 に好ましくは 1 5 0 0以下である。 指数 C 1の上限は、 多くの場合 1 0 0 0程度 である。 指数 C 2の上限は、 多くの場合 5 0 0程度である。 The upper limits of the index C1 and the index C2 are not particularly limited, but are generally 100,000 or less, preferably 500,000 or less, more preferably 300,000 or less. It is preferably 150 or less. The upper limit of the index C 1 is often around 100,000. The upper limit of the index C 2 is often around 500.
指数 C 1及び指数 C 2 (以下、 まとめて 「指数 C i J ということがある) 力 それぞれ上述した条件を満たす酸性基を有する脂環式ォレフイン樹脂は、 アル力 リ現像液に対する溶解性が小さい (すなわち、 比較的アルカリ難溶性である)。 そのため、 このような酸性基を有する脂環式ォレフィン樹脂を含有する感放射線 性樹脂組成物を用いて得られる樹脂膜は、 活性放射線の照射部と未照射部におけ るアル力リ現像液に対する溶解性の差が十分大きく、 良好な解像度及び残膜率が 得られる。 Index C 1 and Index C 2 (hereinafter sometimes collectively referred to as “index C i J”) Alicyclic resin having an acidic group that satisfies the above-mentioned conditions has low solubility in Al developing solution. Therefore, the resin film obtained by using the radiation-sensitive resin composition containing the alicyclic olefin resin having such an acidic group has the same characteristics as the active radiation-irradiated part. The difference in solubility between the unirradiated portion and the developer is sufficiently large, and a good resolution and residual film ratio can be obtained.
上述した範囲の指数 C iである酸性基を有する脂環式ォレフイン樹脂を得るた
めに、 指数 C iが算出される式 (1)及び (2)の要素である重量平均分子量、 構造単 位当たりの平均炭素数、 全構造単位中の酸性基のモル%、 及び分子量分布を、 酸 性基を有する脂環式ォレフイン樹脂の製造条件などにより制御することができ る。 An alicyclic resin having an acidic group having an index C i in the range described above was obtained. In order to calculate the index C i, the weight average molecular weight, the average number of carbon atoms per structural unit, the mole% of acidic groups in all structural units, and the molecular weight distribution, which are elements of the formulas (1) and (2), for which the index C i is calculated It can be controlled by the production conditions of the alicyclic resin having an acidic group.
本発明において、 酸性基を有する脂環式ォレフイン樹脂の分子量分布とは、 重 量平均分子量 Z数平均分子量 (Mw/M n ) で表される分散度である。 数平均分 子量は、 重量平均分子量と同様、 G P Cにより測定されるポリスチレン換算値で ある。 低誘電率、 低吸水性、 耐溶剤性、 解像度、 残膜率、 パターン形状などの各 特性に優れる点で、 重量平均分子量は、 通常 5 0 0〜 2 0 0 0 0、 好ましくは 1 0 0 0〜 1 5 0 0 0、 より好ましくは 1 0 0 0以上 1 0 0 0 0未満である。 した がって、 前記式 (1)が適用される重量平均分子量を有する酸性基を有する脂環式ォ レフィン樹月旨を用いることが最も好ましい。 In the present invention, the molecular weight distribution of the alicyclic resin having an acidic group is a dispersity represented by a weight average molecular weight Z number average molecular weight (Mw / M n). The number average molecular weight is a value in terms of polystyrene measured by GPC as in the case of the weight average molecular weight. The weight-average molecular weight is usually 50,000 to 200,000, and preferably 100, in terms of excellent properties such as low dielectric constant, low water absorption, solvent resistance, resolution, remaining film ratio, and pattern shape. It is from 0 to 1500, more preferably from 10000 to less than 10000. Therefore, it is most preferable to use an alicyclic olefin having an acidic group having a weight average molecular weight to which the formula (1) is applied.
重量平均分子量を制御する方法は、 特に制限されず、 例えば、 後述する分子量 調整剤を用いる方法などを採用すればよい。 また、 異なる重量平均分子量を有す る複数種類の樹脂を混合し、 混合樹脂としての重量平均分子量を目的の重量平均 分子量にすることもできる。 The method for controlling the weight average molecular weight is not particularly limited, and for example, a method using a molecular weight modifier described later may be employed. Further, a plurality of types of resins having different weight average molecular weights may be mixed, and the weight average molecular weight of the mixed resin may be adjusted to a target weight average molecular weight.
分子量分布を制御する方法は、 特に制限されず、 例えば、 3 . 3以下、 好まし くは 3 . 0以下、 より好ましくは 2 . 5以下、 特に好ましくは 2 . 0以下である ような分子量分布の狭い樹脂を得るには、 例えば、 公知の触媒を用い、 温度や時 間などの反応条件を調整するか、 あるいは後述する中性の電子供与性配位子を有 する有機ルテニウム化合物を主成分とする触媒を用いて開環重合する方法が好適 に採用される。 The method for controlling the molecular weight distribution is not particularly limited. For example, the molecular weight distribution is 3.3 or less, preferably 3.0 or less, more preferably 2.5 or less, and particularly preferably 2.0 or less. In order to obtain a resin having a narrow molecular weight, for example, a known catalyst is used to adjust reaction conditions such as temperature and time, or an organic ruthenium compound having a neutral electron-donating ligand described later is used as a main component. The method of ring-opening polymerization using the catalyst described above is suitably adopted.
平均炭素数は、 樹脂を構成する各構造単位中に含まれる、 酸性基を構成する炭 素以外の炭素原子の数と各構造単位の割合との積の合計で算出される。 ここで、 各構造単位の割合は、 樹脂を構成する構造単位の合計 1モルに対する値 (モル) である。 したがって、 例えば、 極性基を構成する炭素を除く炭素数が 1 2の構造 単位 (I)と炭素数が 6の構造単位 (II)とが、 1 : 1のモル比で存在する樹脂の場
合、 構造単位当たりの平均炭素数は、 1 2 X 0 . 5 + 6 X 0 . 5 = 9と計算され る。 The average number of carbon atoms is calculated by the sum of the product of the number of carbon atoms other than the carbon atoms constituting the acidic group and the ratio of each structural unit contained in each structural unit constituting the resin. Here, the ratio of each structural unit is a value (mol) based on 1 mol of the total of the structural units constituting the resin. Therefore, for example, in the case of a resin in which the structural unit (I) having 12 carbon atoms and the structural unit (II) having 6 carbon atoms excluding the carbon constituting the polar group exist in a molar ratio of 1: 1. In this case, the average number of carbons per structural unit is calculated as 12 X 0.5 + 6 X 0.5 = 9.
酸性基の割合は、 全構造単位に対する酸性基を有する構造単位の割合 (モ ル%) である。 The ratio of the acidic group is the ratio (mol%) of the structural unit having the acidic group to all the structural units.
平均炭素数や酸性基割合を制御する方法は、 特に制限されず、 例えば、 樹脂を 製造する際に用いる単量体の種類や使用量などを調整することにより行えばよ い。 The method for controlling the average number of carbon atoms and the ratio of acidic groups is not particularly limited, and may be performed, for example, by adjusting the type and amount of a monomer used in producing a resin.
本発明で使用する (A) 酸性基を有する脂環式ォレフイン樹脂は、 脂環式構造 含有ォレフィン単量体 (以下、 「脂環式ォレフイン単量体」 という) 由来の構造 単位を有する重合体である。 該重合体は、 脂環式ォレフイン単量体由来の構造単 位以外の構造単位を含んでいてもよい。 酸性基は、 水中でプロトンを発生し得る 基であればよく、 その具体例としては、 フエノール性水酸基、 カルボキシル基 (すなわち、 ヒドロキシカルボニル基)、 ジカルボン酸無水物残基、 スルホン酸 残基、 リン酸残基などが挙げられる。 これらの中でも、 カルボキシル基及ぴジカ ルボン酸無水物残基が好ましい。 このような酸性基は、 脂環式ォレフイン単量体 由来の構造単位中に存在しても、 脂環式ォレフイン単量体由来の構造単位以外の 構造単位中に存在してもよい。 酸性基の割合は、 低誘電率の樹脂が得られること と、 樹脂のアルカリ現像液に対する溶解性を制御しやすいことから、 通常 2 0〜 8 0モル0 /0、 好ましくは 3 0〜 7 5モル0 /0、 より好ましくは 3 0〜 7 0モル0 /0で ある。 酸性基を有する脂環式ォレフイン樹脂は、 酸性基以外のヒドロキシル基や エステル基などの極性基を有していてもよい。 The (A) alicyclic olefin resin having an acidic group used in the present invention is a polymer having a structural unit derived from an alicyclic structure-containing olefin monomer (hereinafter, referred to as an “alicyclic olefin monomer”). It is. The polymer may contain a structural unit other than a structural unit derived from an alicyclic olefin monomer. The acidic group may be any group capable of generating a proton in water, and specific examples thereof include a phenolic hydroxyl group, a carboxyl group (that is, a hydroxycarbonyl group), a dicarboxylic anhydride residue, a sulfonic acid residue, and phosphorus. Acid residues and the like. Among these, a carboxyl group and a dicarboxylic anhydride residue are preferred. Such an acidic group may be present in a structural unit derived from an alicyclic olefin monomer, or may be present in a structural unit other than a structural unit derived from an alicyclic olefin monomer. The proportion of acid groups, and the low dielectric constant of the resin is obtained, since the easy to control the solubility in an alkali developing solution of the resin, usually 2 0-8 0 mole 0/0, preferably 3 0-7 5 mole 0/0, more preferably 3 0-7 0 mol 0/0. The alicyclic resin having an acidic group may have a polar group other than the acidic group, such as a hydroxyl group or an ester group.
脂環式ォレフイン単量体に含有される脂環式構造は、 単環であっても、 多環 (縮合多環、 橋架け環、 これらの組み合わせ多環等) であってもよい。 機械的強 度と耐熱性の観点から多環であることが好ましい。 脂環式構造を構成する炭素原 子数に、 格別な制限はないが、 通常 4〜3 0個、 好ましくは 5〜2 0個、 より好 ましくは 5〜1 5個の範囲であり、 それによつて、 耐熱性、 パターン形成性など の諸特性が高度にバランスされる。
脂環式ォレフィン樹脂中の脂環式ォレフイン単量体由来の構造単位の割合は、 使用目的に応じて適宜選択されるが、 通常 3 0〜1 0 0重量%、 好ましくは 5 0 〜1 0 0重量%、 より好ましくは 7 0〜1 0 0重量%の範囲内である。 脂環式ォ レフイン単量体由来の構造単位の割合が過度に少ないと、 耐熱性に劣り好ましく ない。 The alicyclic structure contained in the alicyclic olefin monomer may be monocyclic or polycyclic (condensed polycyclic, bridged ring, combination of these, etc.). From the viewpoints of mechanical strength and heat resistance, it is preferably polycyclic. Although the number of carbon atoms constituting the alicyclic structure is not particularly limited, it is usually in the range of 4 to 30, preferably 5 to 20, more preferably 5 to 15, Thereby, various properties such as heat resistance and pattern formability are highly balanced. The proportion of the structural unit derived from the alicyclic olefin monomer in the alicyclic olefin resin is appropriately selected according to the purpose of use, but is usually 30 to 100% by weight, preferably 50 to 10% by weight. 0% by weight, more preferably in the range of 70 to 100% by weight. If the proportion of the structural unit derived from the alicyclic olefin monomer is too small, the heat resistance is poor, which is not preferable.
脂環式ォレフイン樹脂としては、 ω脂環式ォレフイン単量体の開環 (共) 重合 体及ぴその水素添加物、 (ii)脂環式ォレフイン単量体の付加 (共) 重合体、 (iii) 脂環式ォレフイン単量体とビュル化合物との付加共重合体、 (iv)単環シクロアル ケン (共) 重合体、 (V)脂環式 *¾ジヱン (共) 重合体、 (vi)ビュル系脂環 化 水素 (共) 重合体及びその水素添加物、 並びに (vii)芳香族ォレフイン (共) 重合 体の芳香環水素添加物からなる群より選ばれる少なくとも 1種の樹脂を挙げるこ とができる。 Examples of the alicyclic olefin resin include a ring-opening (co) polymer of an ω alicyclic olefin monomer and a hydrogenated product thereof, (ii) an addition (co) polymer of an alicyclic olefin monomer, iii) an addition copolymer of an alicyclic olefin monomer and a bull compound, (iv) a monocyclic cycloalkene (co) polymer, (V) an alicyclic * diazine (co) polymer, (vi) At least one resin selected from the group consisting of a butyl-based alicyclic hydrogen (co) polymer and a hydrogenated product thereof, and (vii) an aromatic olefin (co) polymer having an aromatic ring hydrogenated product may be mentioned. Can be.
脂環式ォレフイン樹脂としては、 脂環式ォレフイン単量体の開環 (共) 重合体 の水素添加物が好ましい。 脂環式ォレフイン樹脂は、 ノルボルネン系単量体の開 環 (共) 重合体の水素添加物であることがより好ましい。 ノルボルネン系単量体 としては、 後述するテトラシクロドデセン類が好ましレ、。 As the alicyclic olefin resin, a hydrogenated product of a ring-opening (co) polymer of an alicyclic olefin monomer is preferable. The alicyclic resin is more preferably a hydrogenated product of a ring-opening (co) polymer of a norbornene-based monomer. As the norbornene-based monomer, tetracyclododecenes described later are preferable.
酸性基を有する脂環式ォレフィン榭脂は、 脂環式ォレフィン樹脂を酸性基含有 化合物で変性することにより合成することができる。 また、 酸性基を有する脂環 式ォレフイン樹脂は、 酸性基を有する脂環式ォレフイン単量体と酸性基を有しな い脂環式ォレフイン単量体との付加共重合体、 開環共重合体、 またはそれらの水 素添加物として合成することができる。 さらに、 酸性基を有する脂環式ォレフィ ン樹脂は、 メトキシカルボ-ル基の如きエステル基を含有する脂環式ォレフイン 単量体と、 必要に応じてエステル基を有しない単量体 (例えば、 環状ォレフィン 単量体、 ビニル単量体など) との付カ卩 (共) 重合体、 開環 (共) 重合体、 または それらの水素添加物を加水分解することにより合成することができる。 以下、 こ れらの点について、 より詳細に説明する。 なお、 以下の説明において、 煩雑さを 避けるために、 重合も共重合も共に 「重合」 と表記し、 重合体も共重合体も共に
「重合体」 と表記する。 The alicyclic resin having an acidic group can be synthesized by modifying the alicyclic resin with a compound having an acidic group. Further, an alicyclic olefin resin having an acidic group is an addition copolymer of an alicyclic olefin monomer having an acidic group and an alicyclic olefin monomer having no acidic group, and a ring-opening copolymer. It can be synthesized as a union or a hydrogen additive thereof. Further, an alicyclic olefin resin having an acidic group includes an alicyclic olefin monomer having an ester group such as a methoxycarbol group and a monomer having no ester group as necessary (for example, It can be synthesized by hydrolyzing a copoly (co) polymer, a ring-opening (co) polymer, or a hydrogenated product thereof with a cyclic olefin monomer or a vinyl monomer. Hereinafter, these points will be described in more detail. In the following description, for the sake of simplicity, both polymerization and copolymerization will be referred to as “polymerization”, and both the polymer and the copolymer will be described. It is described as “polymer”.
酸性基を有する脂環式ォレフイン樹脂を得る方法は、 特に制限されず、 例え ば、 酸性基を有さない脂環式ォレフイン単量体を、 必要に応じてこれと共重合可 能な単量体と共に、 付加重合または開環重合し、 次いで、 必要に応じて不飽和結 合部分を水素添加することによって、 酸性基を有さない脂環式ォレフイン樹脂を 合成し、 この脂環式ォレフイン樹脂を、 ラジカル開始剤の存在下、 アクリル酸、 メタクリル酸、 α—ェチルアクリル酸、 2—ヒ ドロキシェチル (メタ) アクリル 酸、 マレイン酸、 フマール酸、 ィタコン酸、 エンドシス一ビシクロ [ 2 . 2 . 1 ] ヘプトー 5 _ェンー 2, 3—ジカルボン酸、 メチル—エンドシス一ビシクロ The method for obtaining the alicyclic olefin resin having an acidic group is not particularly limited. For example, a monomer capable of being copolymerized with an alicyclic olefin monomer having no acidic group, if necessary, may be used. Addition polymerization or ring-opening polymerization together with the polymer, and then hydrogenation of the unsaturated bond portion as necessary to synthesize an alicyclic olefin resin having no acidic group, and this alicyclic olefin resin is synthesized. In the presence of a radical initiator, acrylic acid, methacrylic acid, α-ethylacrylic acid, 2-hydroxyxethyl (meth) acrylic acid, maleic acid, fumaric acid, itaconic acid, endocis-bicyclo [2.2.1] 5_2,3-dicarboxylic acid, methyl-endocis-bicyclo
[ 2 . 2 . 1 ] ヘプトー 5—ェン一 2, 3—ジカルボン酸などの不飽和カルボン 酸化合物、 これらのエステルまたはアミ ド;無水マレイン酸、 クロ口無水マレイ ン酸、 ブテュル無水コハク酸、 テトラヒドロ無水フタル酸、 無水シトラコン酸な どの不飽和カルボン酸無水物等の酸性基含有化合物で変性する方法 (I)によって合 成することができる。 また、 酸性基を有する脂環式ォレフイン樹脂は、 酸性基を 有さない脂環式ォレフィン単量体と酸性基を有する脂環式ォレフィン単量体とを 共重合させる方法 (Π)によって得ることができる。 この場合、 重合の形式として は、 付加重合及び開環重合があり、 重合後、 必要に応じて水素添加してもよい。 前記 (I)の方法では、 酸性基を有しない脂環式ォレフイン樹脂として、 スチレ ン、 α—メチノレスチレン、 ジビ-ノレべンゼン、 ビニノレナフタレン、 ビ二/レト /レエ ンなどの芳香族ォレフインを付加重合して得られた重合体の芳香環を水素添加し て、 脂環式ォレフイン単量体由来の構造単位と同じ構造単位を形成させた樹月旨を 使用することもできる。 脂環式ォレフイン樹脂は、 脂環式ォレフイン単量体と、 これと共重合可能な単量体とを共重合して得られるものであってもよレ、。 前記 (I) の方法では、 共重合可能な単量体として酸性基を有するものを用いれば、 酸性基 を有する脂環式ォレフイン樹脂を直接得ることもできる。 [2.2.1] Unsaturated carboxylic acid compounds such as heptose 5-ene-1,2,3-dicarboxylic acid, esters or amides thereof; maleic anhydride, maleic anhydride, buturic succinic anhydride, It can be synthesized by the method (I) of modifying with an acidic group-containing compound such as an unsaturated carboxylic anhydride such as tetrahydrophthalic anhydride or citraconic anhydride. The alicyclic olefin resin having an acidic group can be obtained by a method (方法) in which an alicyclic olefin monomer having no acidic group is copolymerized with an alicyclic olefin monomer having an acidic group. Can be. In this case, the type of polymerization includes addition polymerization and ring-opening polymerization, and after polymerization, hydrogenation may be performed if necessary. In the method (I), as the alicyclic olefin resin having no acidic group, aromatic resins such as styrene, α-methinolestyrene, di-no-le-benzene, bininole-naphthalene, and vinyl / leto / leene are used. An aromatic ring of a polymer obtained by addition polymerization of olefin may be hydrogenated to form a structural unit identical to a structural unit derived from an alicyclic olefin monomer. The alicyclic olefin resin may be obtained by copolymerizing an alicyclic olefin monomer and a monomer copolymerizable therewith. In the method (I), if a copolymerizable monomer having an acidic group is used, an alicyclic resin having an acidic group can be directly obtained.
前記 (II)の方法として、 特に、 中性の電子供与性配位子を有する有機ルテニゥ ム化合物を主成分とする触媒の存在下で、 極性基を有しない脂環式ォレフイン単
量体と極性基を有する脂環式ォレフイン単量体とを開環メタセシス共重合し、 必 要に応じてさらに加水分解などにより置換基を変性すると、 分子量分布の狭い脂 環式ォレフイン樹脂が得られる。 この方法において使用される触媒は、 中性の電 子供与性配位子が配位している有機ルテニゥム化合物を主成分とする触媒であ る。 該有機ルテユウム化合物を構成する中性の電子供与性配位子は、 中心金属の ルテニウムから引き離されたときに、 中性の電荷を持つ配位子である。 有機ルテ ユウム化合物としては、 ルテニウムから引き離されたときに負の電荷を持つァニ オン性配位子が配位している化合物を使用することもできる。 この場合、 対ァニ オンが存在していてもよく、 さらに、 ルテニウム陽イオンとイオン対を形成する 陰イオンを対イオンとして有していてもよい。 As the method (II), in particular, in the presence of a catalyst mainly composed of an organic ruthenium compound having a neutral electron donating ligand, an alicyclic olefin having no polar group is used. The monomer and the alicyclic olefin monomer having a polar group are subjected to ring-opening metathesis copolymerization, and if necessary, the substituent is further modified by hydrolysis or the like to obtain an alicyclic olefin resin having a narrow molecular weight distribution. Can be The catalyst used in this method is a catalyst mainly composed of an organic ruthenium compound to which a neutral electron-donating ligand is coordinated. The neutral electron donating ligand constituting the organic ruthenium compound is a ligand having a neutral charge when separated from the central metal ruthenium. As the organic ruthenium compound, a compound in which an anionic ligand having a negative charge when separated from ruthenium can be used. In this case, a counter anion may be present, and an anion that forms an ion pair with a ruthenium cation may be included as a counter ion.
脂環式ォレフイン樹脂を得るために使用される単量体の具体例を、 以下に挙げ る。 Specific examples of the monomer used for obtaining the alicyclic resin are shown below.
酸性基を有さない脂環式ォレフイン単量体としては、 ビシクロ [2. 2. 1] ヘプトー 2—ェン (慣用名 : ノルボルネン)、 5—メチル一ビシクロ [2. 2. 1] ヘプト一 2—ェン、 5, 5—ジメチル一ビシクロ [2. 2. 1] ヘプトー 2 —ェン、 5—ェチル—ビシクロ [2. 2. 1] ヘプト一 2—ェン、 5—ブチルー ビシクロ [2. 2. 1] ヘプトー 2—ェン、 5—へキシル一ビシクロ [2. 2. 1] ヘプト一 2—ェン、 5—ォクチルービシクロ [2. 2. 1] ヘプト一 2—ェ ン、 5—ォクタデシルービシクロ [2. 2. 1] ヘプトー 2—ェン、 5—ェチリ デン一ビシクロ [2. 2. 1] ヘプト一 2—ェン、 5—メチリデン一ビシクロ [2. 2. 1] ヘプト一 2—ェン、 5—ビニル一ビシクロ [2. 2. 1] ヘプト 一 2_ェン、 5—プロぺニル一ビシクロ [2. 2. 1] ヘプトー 2—ェン、 5— メ トキシ一カルビ二ルービシクロ [2. 2. 1] ヘプト一 2—ェン、 5—シァノ ービシクロ [2. 2. 1] ヘプトー 2—ェン、 5—メチル一 5—メ トキシカルボ 二/レービシクロ [2. 2. 1] ヘプト一 2—ェン、 5—エトキシカルボ二ルーピ シクロ [2. 2. 1] —ヘプトー 2—ェン、 ビシクロ [2. 2. 1] ヘプト一 5 —ェニル一 2—メチルプロビオネイ ト、 ビシクロ [2. 2. 1] ヘプト一 5—ェ
ニル一 2—メチルォクタネイト、 5—ヒドロキシメチルビシクロ [2. 2. 1] ヘプトー 2—ェン、 5, 6—ジ (ヒドロキシメチル) ービシクロ [2. 2. 1] ヘプト一 2—ェン、 5—ヒドロキシー i—プロピルビシクロ [2. 2. 1] ヘプ トー 2—ェン、 5, 6—ジカルボキシービシクロ [2. 2. 1] ヘプト一 2—ェ ン、 ビシクロ [2. 2. 1] ヘプト一 2—ェンー 5, 6—ジカルボン酸イミ ド、 5—シクロペンチノレ一ビシクロ [2. 2. 1] ヘプト一 2—ェン、 5—シクロへ キシノレ一ビシクロ [2. 2. 1] ヘプトー 2—ェン、 5—シクロへキセニル一ビ シクロ [2. 2. 1] ヘプト一 2—ェン、 5—フエニル一ビシクロ [2. 2. 1] ヘプトー 2—ェン、 トリシクロ [4. 3. 0. I2' 5] デカ一 3, 7—ジェ ン (慣用名 :ジシクロペンタジェン)、 トリシクロ [4. 3. 0. I2' 5] デカ一 3—ェン、 トリシクロ [4. 4. 0. I 2' 5] ゥンデ力一 3, 7—ジェン、 トリ シクロ [4. 4. 0. I 2' 5] ゥンデカー 3, 8—ジェン、 トリシクロ [4. 4. 0. I 2' 5] ゥンデ力一 3—ェン、 テトラシクロ [7. 4. 0. I 10' 13. 02' 7] トリデカ一 2, 4, 6- 1 1ーテトラェン (別名 : 1, 4—メタノ一 1, 4, 4 a, 9 a—テトラヒドロフルオレン)、 テトラシクロ [8. 4. 0. I 11' 14. 02' 8] テトラデカー 3, 5, 7, 12— 1 1—テトラエン (別名 : 1, 4—メタノ一 1, 4, 4 a, 5, 10, 10 a _へキサヒドロアントラセ ン)、 テトラシクロ [4. 4. 0. I 2' 5. I 7' 10] ドデカー 3—ェン (慣用 名:テトラシクロドデセン)、 8—メチルーテトラシクロ [4. 4. 0. I2' 5. I 7' 10] ドデ力一 3—ェン、 8—ェチルーテトラシクロ [4. 4. 0. I 2' 5. I7' 10] ドデ力一 3—ェン、 8—メチリデン一テトラシクロ [4. 4. 0. I2' 5 ! 7. 10] ドデカ— 3一ェン、 8—ェチリデン一テトラシクロ [4. 4. 0.Examples of the alicyclic olefin monomer having no acidic group include bicyclo [2.2.1] hept-2-ene (common name: norbornene) and 5-methyl-bicyclo [2.2.1] heptone. 2-ene, 5,5-dimethyl-bicyclo [2.2.1] heptoh 2-ene, 5-ethyl-bicyclo [2.2.1] hept-2-ene, 5-butyl-bicyclo [2 2.1) Heptot-2-ene, 5-hexyl-1-bicyclo [2.2.1] Hept-12-ene, 5-octyl-bicyclo [2.2.1] Hept-2-ene , 5-octadecyl-bicyclo [2.2.1] heptoe 2-ene, 5-ethylidene-d-bicyclo [2.2.1] hept-12-ene, 5-methylidene-bicyclo [2.2] 1] Hept-1-ene, 5-vinyl-1-cyclo [2.2.1] Hept-12-ene, 5-propenyl-bicyclo [2.2.1] Hept-2-ene, 5 — Methoxy-carbinyl-rubicyclo [2.2.1] hep 1-2-ene, 5-cyanobicyclo [2.2.1] hept-2-ene, 5-methyl-1-5-methoxycarbo-2 / lebicyclo [2.2.1] hept-2-ene, 5 —Ethoxycarbonyl-2-loop cyclo [2.2.1] —Heptoh-2-ene, bicyclo [2.2.1] hept-1-5—enyl-1-2-methylpropionate, bicyclo [2.2.1] hept One five Nyl-1-methyloctanate, 5-hydroxymethylbicyclo [2.2.1] hept-2-ene, 5,6-di (hydroxymethyl) -bicyclo [2.2.1] hept-2-ene , 5-hydroxy-i-propylbicyclo [2.2.1] hept-2-ene, 5,6-dicarboxy-bicyclo [2.2.1] hept-12-ene, bicyclo [2.2.1] ] Hept-1-ene-5,6-dicarboxylic acid imide, 5-cyclopentinolebicyclo [2.2.1] Hept-12-ene, 5-cyclohexynolebicyclo [2.2.1] Hept-2-ene, 5-cyclohexenyl-bicyclo [2.2.1] hept-12-, 5-phenyl-bicyclo [2.2.1] hept-2-ene, tricyclo [4. 3. 0. I 2 ' 5 ] Deca 3, 7-gen (common name: dicyclopentadiene), tricyclo [4. 3. 0. I 2 ' 5 ] Deca 3-ene, tricyclo [4 . 4.0. I 2 ' 5 ] Index 3, 7-Gen, Tricyclo [4.4.0. I 2 ' 5 ] Index 3, 8-Gen, Tricyclo [4. 4.0. I 2 ' 5 ] Index 1 3-E down, tetracyclo [7. 4. 0. I 10 '. 13 0 2' 7] trideca one 2, 4, 6- 1 1 Tetoraen (aka: 1, 4-methano one 1, 4, 4 a, 9 a- tetrahydrofluorene), tetracyclo [8. 4. 0. I 11 '. 14 0 2' 8] Tetoradeka 3, 5, 7, 12 1 1 tetraene (also known as 1, 4-methano one 1, 4 , 4 a, 5, 10, 10 hexa hydro anthracenyl down to a _), tetracyclo [4. 4. 0. I 2 '5 I 7.' 10] Dodeka 3- E emissions (trivial name: tetracyclododecene ), 8-Methyl-tetracyclo [4. 4. 0. I 2 ' 5. I 7 ' 10 ] Dode force 3-ene, 8-ethyl-tetracyclo [4. 4. 0. I 2 ' 5. I 7 '10] de de force one 3-E down, 8-methylidene one tetracyclo [4. 4. 0. I 2' 5 ! 7.10] dodeca - 3 one E down, 8-Echiriden one tetracyclo [4. 4.0.
I 2' 5. I 7' 10] ドデ力一 3—ェン、 8—ビエル一テトラシクロ [4. 4. 0. I 2' 5. I 7' 10] ドデ力一 3—ェン、 8—プロぺニルーテトラシクロ [4. 4. 0. I2' 5. I 7' 10] ドデカー 3—ェン、 8—メ トキシカルボ二ル一テトラシク 口 [4. 4. 0. I 2' 5. I 7' 10] ドデカー 3—ェン、 8—メチル一8—メ トキ シカルボ二ルーテトラシクロ [4. 4. 0. I 2' 5. I 7' 10] ドデカー 3—ェ
ン、 8—ヒドロキシメチル一テトラシクロ [4. 4. 0. I2' 5. I7' 10] ドデ 力一 3—ェン、 8—ヒ ドロキシカノレポ二ルテトラシクロ [4. 4. 0. I2' 5. I7' 10] ドデ力一 3—ェン、 8—シクロペンチルーテトラシクロ [4. 4. 0. I2' 5. I7' 10] ドデ力一 3—ェン、 8—シクロへキシノレ一テトラシクロ [4. 4. 0. I2' 5. I7' 10] ドデカー 3—ェン、 8—シクロへキセニルーテトラシ クロ [4. 4. 0. I2' 5. I7' 10] ドデカー 3—ェン、 8—フエ二ルーテトラ シクロ [4. 4. 0. I2' 5. I7' 10] ドデ力一 3—ェン、 ペンタシクロ [6. 5. 1. I3' 6. 02' 7. 09' 13] ペンタデ力一 3, 10—ジェン、 ペンタシク 口 [7. 4. 0. I3' 6. l 10' 13. 02' 7] ペンタデ力一 4, 11ージェン、 5—フエ二ルビシクロ [2. 2. 1] ヘプトー 2—ェン、 テトラシクロ [6. 5. 0. I2' 5. 08' 13] トリデカ一 3, 8, 10, 12—テトラエン (1, 4 —メタノー 1, 4, 4 a , 9 a—テトラヒドロフルオレンともいう)、 テトラシ クロ [6. 6. 0. 12' 5. 18' 13] テトラデカ一 3, 8, 10, 12—テトラ ェン (1, 4—メタノ一 1, 4, 4 a, 5, 10, 10 a—へキサヒドロアント ラセンともいう) のごときノルボルネン系単量体;シクロブテン、 シクロペンテ ン、 シクロへキセン、 3, 4—ジメチ シクロペンテン、 3—メチ/レシクロへキ セン、 2— (2—メチ^^ブチル) 一 1—シクロへキセン、 シクロォクテン、 3 a , 5, 6, 7 a—テトラヒドロ一 4, 7—メタノー 1 H—インデン、 シクロへ プテンのごとき単環のシクロアルケン; ビュルシクロへキセンゃビュルシクロへ キサンのごときビュル系脂環式炭化水素系単量体;シク口ペンタジェン、 シク口 へキサジェンのごとき脂環式共役ジェン系モノマー;などが挙げられる。 I 2 ' 5. I 7 ' 10 ] Dode force 3-ene, 8-Biel-tetracyclo [4.4.0. I 2 ' 5. I 7 ' 10 ] Dode force 3-ene, 8-Propenyl-tetracyclo [4.4.0. I 2 ' 5. I 7 ' 10 ] Dodeca 3-ene, 8-Methoxycarbonyl-tetracyclo mouth [4.4.0. I 2 ' 5 . I 7 '10] Dodeka 3 E down, 8-methyl-one 8-main Toki Shikarubo two Lou tetracyclo [4. 4. 0. I 2' 5 . I 7 '10] Dodeka 3- E 4-hydroxymethyl monotetracyclo [4. 4. 0. I 2 ' 5. I 7 ' 10 ] dode 3-one, 8-hydroxycanoleponyl tetracyclo [4. 4. 0. I 2 ' 5. I 7 '10] dodecane force one 3-E down, 8-cyclopentyl rule tetracyclo [4. 4. 0. I 2' 5 . I 7 '10] dodecane force one 3-E down, 8- Cyclohexinole-tetracyclo [4. 4. 0. I 2 ' 5. I 7 ' 10 ] Dodeca 3-ene, 8-cyclohexenyl-tetracyclo [4. 4. 0. I 2 ' 5. I 7 '10] Dodeka 3 E down, 8-phenylene Rutetora cyclo [4. 4. 0. I 2' 5 . I 7 '10] dodecane force one 3-E down, pentacyclo [6.5.1. I 3 '6. 0 2' 7. 0 9 '13] Pentade force one 3, 10-Zhen, Pentashiku port [7. 4. 0. I 3' 6 . l 10 '13. 0 2' 7] Pentade force one 4, 11 Jen, 5-phenylene Rubishikuro [2.2.1] Heputo 2 E down, tetracyclo [6. 5. 0. I 2 '5 . 0 8' 13] trideca one 3, 8, 10, 12 Tetraene (1, 4 - methanol 1, 4, 4 a, 9 a- also referred tetrahydrofluorene), Tetorashi black [6.6.2 0.1 2 '. 5 1 8' 13] tetradeca one 3, 8, 10, Norbornene-based monomers such as 12-tetraene (also called 1,4-methano-1,4,4a, 5,10,10a-hexahydroanthracene); cyclobutene, cyclopentene, cyclohexene , 3,4-Dimethycyclopentene, 3-Methyl / lecyclohexene, 2- (2-Methyl ^^ butyl) -1-cyclohexene, Cyclooctene, 3a, 5,6,7a-Tetrahydro-1,4 7-Methanol 1H-Monocyclic cycloalkenes such as indene and cycloheptene; Bulcyclohexenes and Bulcyclohexanes; Bul-based alicyclic hydrocarbon-based monomers; Alicyclic conjugated monomer And the like.
酸性基であるヒドロキシカルボ二ル基を有する脂環式ォレフイン単量体として は、 5—ヒ ドロキシカルボ二ルビシクロ [2. 2. 1] ヘプトー 2—ェン、 5— ヒ ドロキシカルボ二ルメチルビシクロ [2. 2. 1] ヘプト一 2—ェン、 5, 6 —ジヒ ドロキシカルボ二ルビシクロ [2. 2. 1] ヘプト一 2—ェン、 5—メチ ル一5—ヒ ドロキシカノレボニルビシクロ [2. 2. 1] ヘプトー 2—ェン、 5— メチル一5, 6—ジヒ ドロキシカルボ二ルビシクロ [2. 2. 1] ヘプトー 2_
ェン、 5—ヒ ドロキシカルボ二ルー 5—ヒ ドロキシカルボ二ルメチルビシクロ Examples of alicyclic olefin monomers having a hydroxycarboxy group as an acidic group include 5-hydroxycarbonylbicyclo [2.2.1] heptoh-2-ene and 5-hydroxycarbonylmethylbicyclo [2.2.1]. 2.1. 1-hept-1-ene, 5, 6-dihydroxycarbonylbicyclo [2.2.1] hept-12-, 5-methyl-5-hydroxycanolebonylbicyclo [2. 2.1] Heptot-2-ene, 5-Methyl-1,5,6-dihydroxycarbonylbicyclo [2.2.1] Heptot 2_ 5, 5-hydroxycarbonyl 5-cyclohydroxymethylbicyclo
[2. 2. 1] ヘプト一 2—ェンなどのビシクロヘプテン誘導体; 5—ヒドロキ シカルボ二ルテトラシクロ [4. 4. 0. I2' 5. I7' 10] ドデ力一 3—ェン、 5—ヒドロキシカルボ二ルメチルテトラシクロ [4. 4. 0. I 2' 5. I7' 10] ドデカー 3—ェン、 5, 6—ジヒ ドロキシカルボ二ルテトラシクロ [4. 4. 0. I 2' 5. I 7' 10] ドデ力一 3—ェン、 5—メチル一 5—ヒ ドロキシカルボ二 ルテトラシクロ [4. 4. 0. I2' 5. I7' 10] ドデ力一 3—ェン、 5—メチル -5, 6—ジヒ ドロキシカルボ二ルテトラシクロ [4. 4. 0. I 2' 5. 17' 1 °] ドデカー 3—ェン、 5—ヒ ドロキシカルボニル一 5—ヒドロキシカルボニル メチルテトラシクロ [4. 4. 0. I 2' 5. I7' 10] ドデ力一 3—ェン; 8—ヒ ドロキシカルボ-ルテトラシクロ [4. 4. 0. I2' 5. I 7' 10] ドデ力一 3— ェン、 8—ヒドロキシカルボ二ルメチルテトラシクロ [4. 4. 0. I 2' 5. 1 7' 10] ドデ力一 3—ェン、 8, 9—ジヒドロキシカルボ二ルテトラシクロ [4. 4, 0. I2' 5. I7' 10] ドデカー 3—ェン、 8—メチル一8—ヒドロキシカル ボニルテトラシクロ [4. 4. 0. I2' 5. I7' 10] ドデ力一 3—ェン、 8—メ チル一 8, 9—ジヒ ドロキシカルボ-ルテトラシクロ [4. 4. 0. I 2' 5. 1 7- 10] ドデカー 3—ェン、 8—ヒ ドロキシカルボニノレー 8—ヒ ドロキシカルボュ ルメチルテトラシクロ [4. 4. 0. I2' 5. I 7' 10] ドデ力一 3—ェンなどの テトラシクロドデセン誘導体; 1 1—ヒドロキシカルボ二ルへキサシク口 [ 6. 6. 1. I 3' 6. l 10' 13. 02' 7. 09' 14] —ヘプタデ力一 4—ェン、 11一 ヒドロキシカルボニルメチルへキサシクロ [6. 6. 1. I3' 6. I 10' 13. 0 2. 7. 09. 14] ヘプタデ力— 4—ェン、 1 1, 12—ジヒ ドロキシカルボニルへ キサシクロ [6. 6. 1. I 3' 6. I 10' 13. 02' 7. 09' 14] ヘプタデカー 4 —ェン、 1 1ーメチルー 1 1—ヒ ドロキシカルボニルへキサシクロ [6. 6. 1. I 3' 6. 110. 13 02. 7 o9' 14] ヘプタデカ一4—ェン、 1 1—メチノレ — 1 1, 12—ジヒドロキシカノレボニルへキサシクロ [6. 6. 1. I3' 6. 11 0, 1 3. 02. 7 o9' 14] ヘプタデカー 4—ェン、 1 1—ヒドロキシカルボ二ルー
1 1—ヒドロキシカルボニルメチルへキサシクロ [6. 6. 1. I3' 6. 110' 1 3 02. 7 09' 1っ ヘプタデカ _ 4—ェンなどのへキサシクロへプタデセン誘 導体;等を挙げることができる。 [2.2.1] bicycloheptene derivatives hept one 2-E emissions; 5-hydroxy Shikarubo two Rutetorashikuro [4. 4. 0. I 2 '. 5 I 7' 10] dodecane force one 3-E down, 5-hydroxy-carbonylation methyl tetracyclo [4. 4. 0. I 2 '5 . I 7' 10] Dodeka 3 E emissions, 5, 6 dihydric Dorokishikarubo two Rutetorashikuro [4. 4. 0. I 2 ' 5. I 7 '10] dodecane force one 3-E down, 5-methyl-one 5-arsenide Dorokishikarubo two Rutetorashikuro [4. 4. 0. I 2' 5 . I 7 '10] dodecane force one 3- E emissions, 5-methyl-5, 6 dihydric Dorokishikarubo two Rutetorashikuro [4. 4. 0. I 2 '5 . 1 7' 1 °] Dodeka 3 E down, 5- hydroxycarboxylic carbonyl one 5-hydroxycarbonylmethyl Tetracyclo [4. 4. 0. I 2 ' 5. I 7 ' 10 ] Dode force 3-ene; 8-hydroxycarbol tetracyclo [4. 4. 0. I 2 ' 5. I 7 ' 10 ] Dode power 3-ene, 8-hydroxycarbonyl Chill tetracyclo [4. 4. 0. I 2 '5 . 1 7' 10] dodecane force one 3-E down, 8, 9-dihydroxy carbonylation Rutetorashikuro [4. 4, 0. I 2 ' 5. I 7 '10] Dodeka 3 E down, 8-methyl-one 8-hydroxycarboxylic isobornyl tetracyclo [4. 4. 0. I 2' 5 . I 7 '10] dodecane force one 3-E down, 8- main chill one 8, 9 dihydric Dorokishikarubo - Rutetorashikuro [4. 4. 0. I 2 '5 1 7 -. 10] Dodeka 3 E down, 8-hydroxycarboxylic carboxymethyl Nino rate 8 arsenide Dorokishikaruboyu methyl tetracyclo [ 4.4.0. I 2 ' 5. I 7 ' 10 ] Tetracyclododecene derivatives such as doden-1-ene; 11-hydroxycarboxyhexa [6.6.1 I . 3 '. 6 l 10' 13 0 2 '7 0 9.' 14] - heptadecyl force one 4-E down, Kisashikuro to 11 one hydroxycarbonylmethyl [6. 6. 1. I 3 '. 6 I 10' 13. 0 2. 7. 09. 14] Heptade force—4-en, 11, 12—dihydroxy To carbonyl Kisashikuro [6. 6. 1. I 3 '6 I 10.' 13 0 2 '7 0 9.' 14.] Heputadeka 4 - E down, Kisashikuro to 1 1-methyl-1 1-hydroxycarboxylic carbonyl [6 . 6. 1. I 3 '. 6 110. 13 02. 7 o 9' 14] heptadeca one 4-E down, 1 l Mechinore - 1 1, Kisashikuro [6.6.1 to 12-dihydroxy Kano levo sulfonyl . I 3 '6. 1 1 0, 1 3. 0 2. 7 o 9' 14] Heputadeka 4 E down, 1 l-hydroxy carbonylation Lou Kisashikuro to 1 1-hydroxycarbonylmethyl [6. 6. 1. I 3 '6 1 10.' 1 3 0 2. 7 0 9 ' Putadesen derivative conductor 1 Tsu to f Kisashikuro such heptadeca _ 4 E emissions; etc. Can be mentioned.
酸性基としてジカルボン酸無水物残基が結合した脂環式ォレフイン単量体とし ては、 ビシクロ [2. 2. 1] ヘプトー 2—ェン一 5, 6—ジカルボン酸無水 物、 5—メチルビシクロ [2. 2. 1] ヘプトー 2—ェン一 5, 6—ジカルボン 酸無水物などのビシクロヘプテン誘導体、 テトラシクロ [4. 4. 0. I 2' 5. I7' 10] ドデカー 3—ェン一 8, 9—ジカルボン酸無水物、 8—メチルテトラシ クロ [4. 4. 0. I2' 5. I 7' 10] ドデカー 3—ェン一 8, 9—ジカノレボン酸 無水物などのテトラシクロドデセン誘導体、 へキサシクロ [6. 6. 1. I 3' 6 ! 10, 13 02. 7 o 9' 1 4] —へプタデカー 4一ェン一 1 1, 12—ジカル ボン酸無水物、 1 1—メチルへキサシクロ [6. 6. 1. I3' 6. I 10' 13. 0 2' 7. 09' 14] ヘプタデカー 4—ェン— 1 1, 12—ジカルボン酸無水物などの へキサシク口へプタデセン誘導体を挙げることができる。 Examples of the alicyclic olefin monomer having a dicarboxylic anhydride residue bonded as an acidic group include bicyclo [2.2.1] hept-2-ene-5,6-dicarboxylic anhydride and 5-methylbicyclo [2.2.1] Heputo 2 E down one 5, bicycloheptene derivatives such as 6-dicarboxylic anhydride, tetracyclo [4. 4. 0. I 2 '5 . I 7' 10] Dodeka 3 E down one 8, 9-dicarboxylic acid anhydride, 8 Mechirutetorashi black [4. 4. 0. I 2 '5 . I 7' 10] tetracyclododecene, such Dodeka 3 E down one 8, 9 Jikanorebon anhydride Derivative, hexacyclo [6. 6. 1. I 3 '6! 10, 13 0 2.7 o 9 ' 1 4 ] —Heptadeca 4-one-11,12-dicarbonic anhydride, 11-methylhexacyclo [6. 6. 1. I 3 ' 6 . I 10 '. 13 0 2' 7 0 9 '14] Heputadeka 4 E down -. 1 1, can be given Putadesen derivative to f Kisashiku port such as 12-dicarboxylic anhydride.
脂環式ォレフイン単量体は、 それぞれ単独で、 あるいは 2種以上を組み合わせ て用いることができる。 The alicyclic olefin monomers can be used alone or in combination of two or more.
脂環式ォレフイン単量体と共重合可能な単量体としては、 エチレン、 プロピレ ン、 1—ブテン、 1—ペンテン、 1—へキセン、 3—メチ/レ一 1—ブテン、 3— メチノレー 1—ペンテン、 3—ェチノレー 1—ペンテン、 4ーメチノレー 1—ペンテ ン、 4—メチノレー 1—へキセン、 4, 4—ジメチノレ一 1—へキセン、 4, 4—ジ メチル一 1—ペンテン、 4ーェチノレー 1—へキセン、 3—ェチル一 1一へキセ ン、 1—ォクテン、 1—デセン、 1—ドデセン、 1—テトラデセン、 1一へキサ デセン、 1—ォクタデセン、 1—エイコセンなどの炭素数 2〜 20のエチレンま たは α—ォレフィン; 1, 4一へキサジェン、 4—メチ Λ^— 1, 4—へキサジェ ン、 5—メチルー 1, 4—へキサジェン、 1, 7—ォクタジェンなどの非共役ジ ェン;等が挙げられる。 これらの単量体は、 それぞれ単独で、 あるいは 2種以上 を組み合わせて使用することができる。
脂環式ォレフイン重合体の重量平均分子量を調整する方法としては、 例えば、 脂環式ォレフインの開環重合に際して、 ビュル化合物またはジェン化合物のよう な分子量調整剤を、 単量体全量に対して 0 . 1〜1 0モル%程度を添加する方法 が挙げられる。 分子量調整剤の使用量が少ない場合は、 比較的高い重量平均分子 量を有する重合体が得られ、 逆に多い場合は、 比較的低い重量平均分子量を有す る重合体が得られる。 Monomers that can be copolymerized with the alicyclic olefin monomer include ethylene, propylene, 1-butene, 1-pentene, 1-hexene, 3-methylene / l-butene, 3-methylenol 1 —Pentene, 3-—Echinolene 1—Pentene, 4-Methynole 1—Pentene, 4-Methynole 1—Hexene, 4,4-Dimethinole 1—Hexene, 4,4—Dimethyl 1—Pentene, 4-Echinolé 1 —Hexene, 3-ethyl-11-hexene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene, 1-hexadecene, 1-octadecene, 1-eicosene, etc. Ethylene or α-olefin; non-conjugated dienes such as 1,4-hexadiene, 4-methyl-1,4-hexadiene, 5-methyl-1,4-hexadiene and 1,7-octadiene And the like. These monomers can be used alone or in combination of two or more. As a method for adjusting the weight average molecular weight of the alicyclic olefin polymer, for example, at the time of ring-opening polymerization of the alicyclic olefin, a molecular weight modifier such as a bullet compound or a gen compound is added to the total amount of the monomer. A method of adding about 1 to 10 mol% is exemplified. When the amount of the molecular weight modifier used is small, a polymer having a relatively high weight average molecular weight is obtained, and when it is large, a polymer having a relatively low weight average molecular weight is obtained.
分子量調整剤として用いるビニル化合物としては、 1—ブテン、 1一ペンテ ン、 1—へキセン、 1—ォクテンなどの c —ォレフィン化合物;スチレン、 ビニ ルトルエンなどのスチレン化合物;ェチルビユノレエーテル、 ィソブチルビニノレエ 一テル、 ァリルダリシジルエーテルなどのェ一テル化合物;ァリルクロライドな どのハ口ゲン含有ビュル化合物;酢酸ァリル、 ァリルアルコール、 グリシジルメ タクリレートなどの酸素含有ビュル化合物;アクリルアミドなどの窒素含有ビニ ル化合物;などが挙げられる。 ジェン化合物としては、 1 , 4一ペンタジェン、 1, 5—へキサジェン、 1 , 6 —へブタジエン、 2—メチノレ一 1 , 4一ペンタジ ェン、 2, 5—ジメチルー 1, 5—へキサジェンなどの非共役ジェン化合物; 1, 3—ブタジエン、 2—メチルー 1, 3—ブタジエン、 2, 3—ジメチル一 1, 3—ブタジエン、 1 , 3—ペンタジェン、 1 , 3—へキサジェンなどの^: ジェン化合物;が挙げられる。 これらの中でも、 1 一へキセンのような α—ォレ フィン化合物が特に好ましレ、。 Vinyl compounds used as molecular weight regulators include c-olefin compounds such as 1-butene, 11-pentene, 1-hexene and 1-octene; styrene compounds such as styrene and vinyltoluene; Ether compounds such as sodium butynyl vinyl ether and aryl daricidyl ether; halogen compounds such as aryl chloride; oxygen-containing compounds such as aryl acetate, aryl alcohol and glycidyl methacrylate; acrylamide and the like A nitrogen-containing vinyl compound; Examples of the gen compounds include 1,4-pentagen, 1,5-hexadiene, 1,6-hexadiene, 2-methynole-1,4-pentadiene, and 2,5-dimethyl-1,5-hexadiene. Non-conjugated diene compounds; ^: Gen compounds such as 1,3-butadiene, 2-methyl-1,3-butadiene, 2,3-dimethyl-1,3-butadiene, 1,3-pentadiene, 1,3-hexadiene ; Of these, α-olefin compounds such as 1-hexene are particularly preferred.
このような単量体を用いて得られる脂環式ォレフイン樹脂としては、 例えば、 脂環式ォレフイン単量体の開環重合体及びその水素添加物、 脂環式ォレフイン単 量体の付加重合体、 脂環式ォレフイン単量体とビュルィヒ合物との付加重合体、 単 環シクロアルケン重合体、 脂環式共役ジェン重合体、 ビュル系脂環式炭化水素重 合体及びその水素添加物、 芳香族ォレフイン重合体の芳香環水素添加物などが挙 げられる。 これらの中でも、 脂環式ォレフイン単量体の開環重合体及びその水素 添加物、 脂環式ォレフイン単量体の付加重合体、 脂環式ォレフイン単量体とビニ ル化合物との付加重合体、 芳香族ォレフイン重合体の芳香環水素添加物が好まし
く、 特に脂環式ォレフイン単量体の開環重合体の水素添加物が好ましい。 Examples of the alicyclic olefin resin obtained using such a monomer include a ring-opened polymer of an alicyclic olefin monomer and a hydrogenated product thereof, and an addition polymer of an alicyclic olefin monomer. , An addition polymer of an alicyclic olefin monomer and a Bürich compound, a monocyclic cycloalkene polymer, an alicyclic conjugated gen polymer, a butyl-based alicyclic hydrocarbon polymer and a hydrogenated product thereof, and an aromatic compound And aromatic ring hydrogenated products of olefin polymers. Among these, a ring-opened polymer of an alicyclic olefin monomer and a hydrogenated product thereof, an addition polymer of an alicyclic olefin monomer, and an addition polymer of an alicyclic olefin monomer and a vinyl compound Aromatic olefin polymer aromatic ring hydrogenated is preferred In particular, a hydrogenated product of a ring-opened polymer of an alicyclic olefin monomer is preferred.
脂環式ォレフイン樹脂は、 それぞれ単独で、 あるいは 2種以上を組み合わせて 用いることができる。 The alicyclic resin may be used alone or in combination of two or more.
本発明に用いる (B ) 成分の酸発生剤は、 活性放射線の照射により酸を発生す る化合物である。 発生する酸の種類には格別な制限はなく、 ポジ型のパターンを 得るためには、 カルボキシル基やフエノール性水酸基などの弱酸性を呈する基を 有する化合物が好ましく、 特にキノンジアジドスルホン酸エステル化合物のよう なカルボキシル基による酸を発生させる化合物が好ましレ、。 The acid generator (B) used in the present invention is a compound that generates an acid upon irradiation with actinic radiation. There is no particular limitation on the type of acid generated, and in order to obtain a positive pattern, a compound having a weakly acidic group such as a carboxyl group or a phenolic hydroxyl group is preferable, and a compound such as a quinonediazidesulfonic acid ester compound is particularly preferable. Compounds that generate an acid by a suitable carboxyl group are preferred.
キノンジアジドスルホン酸エステル化合物の製造方法は、 特に制限されない 力 常法に従って、 アセトン、 ジォキサン、 テトラヒドロフランなどの溶剤中、 トリェチルァミンなどの塩基の存在下、 1, 2—ナフトキノンジアジド一 5—ス ルホン酸クロライドなどのキノンジアジドスルホン酸ハライドと、 2, 3 , 4— トリヒドロキシベンゾフエノン、 2, 3 , 4 , 4 ' —テトラヒ ドロキシベンゾフ ェノン、 2—ビス (4—ヒ ドロキシフエニル) プロパン、 トリス (4ーヒドロキ シフエニル) メタン、 1 , 1 , 1—トリス (4—ヒドロキシー 3—メチルフエ二 ル) ェタン、 1, 1 , 2 , 2—テトラキス (4—ヒドロキシフエニル) ェタン、 1 , 1 , 3—トリス (2 , 5—ジメチル一 4—ヒドロキシフエニル) 一 3—フエ ニルプロパン、 ノボラック樹脂、 フエノール類とジシクロペンタジェンとを共重 合して得られるオリゴマー (特許第 3 0 9 0 9 9 1号公報) などのフエノール性 水酸基を 1つ以上有するフエノール化合物とを反応させることにより得ることが できる。 The method for producing the quinonediazide sulfonic acid ester compound is not particularly limited, and is carried out according to a conventional method. Quinonediazide sulfonic acid halide, 2,3,4-trihydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2-bis (4-hydroxyphenyl) propane, tris (4-hydroxyphenyl) methane 1,1,1,1-tris (4-hydroxy-3-methylphenyl) ethane, 1,1,2,2-tetrakis (4-hydroxyphenyl) ethane, 1,1,3-tris (2,5- Dimethyl-1-hydroxyphenyl) -1-phenylpropane, novolak resin, pheno Obtained by reacting a phenolic compound having at least one phenolic hydroxyl group, such as an oligomer obtained by co-polymerizing a polyol with dicyclopentadiene (Japanese Patent No. 3909911). be able to.
キノンジアジドスルホン酸エステル化合物のエステル化率は、 フエノール化合 物のフエノール性水酸基の水素原子がキノンジァジドスルホン酸残基に置換され ている割合で定義される。 このエステル化率は、 通常 2 0〜1 0 0モル。 /0、 好ま しくは 4 0〜1 0 0モル0 /0、 さらに好ましくは 5 0〜1 0 0モル0 /0、 最も好まし くは 6 0〜1 0 0モル%である。 エステル化率が低すぎると、 未露光部 (未照射 部) の溶解抑止効果が低く、 解像度及び残膜率の低下を生じ易くなる。
また、 酸発生剤としては、 ジァリールョ一ドニゥム塩、 トリアリールスルホニ ゥム塩、 フエニルジァゾユウム塩などのォニゥム塩、 イミ ドスルホネート誘導 体、 トシラート化合物、 ベンジル誘導体のカルボナート化合物、 トリァジン誘導 体のハロゲン化物などの有機ハロゲン化合物、 α , α' 一ビス (スルホニル) ジ ァゾメタン化合物、 α—カルボニル一 ct—スルホニルジァゾメタン化合物、 スル ホン化合物、 有機燐エステル化合物、 有機酸アミド化合物、 有機イミド化合物な どの比較的強い酸を発生する化合物を用いることができ、 それによつて、 ネガ型 パターンを形成することもできる。 The esterification rate of the quinonediazidesulfonic acid ester compound is defined by the ratio of the hydrogen atom of the phenolic hydroxyl group of the phenolic compound to the quinonediazidesulfonic acid residue. The esterification rate is usually 20 to 100 mol. / 0, favored properly 4 0-1 0 0 mole 0/0, more preferably 5 0-1 0 0 mole 0/0, most preferably rather 6 0-1 0 0 mol%. If the esterification ratio is too low, the effect of suppressing the dissolution of the unexposed portions (unirradiated portions) is low, and the resolution and the residual film ratio are likely to decrease. Examples of the acid generator include ionic salts such as diaryldonium salts, triarylsulfonium salts, and phenyldiazonium salts, imidosulfonate derivatives, tosylate compounds, carbonate compounds of benzyl derivatives, and triazine derivatives. Halogenated organic halogen compounds, α , α'- bis (sulfonyl) diazomethane compound, α-carbonyl-ct-sulfonyldiazomethane compound, sulfone compound, organic phosphorus ester compound, organic acid amide compound, A compound that generates a relatively strong acid, such as an organic imide compound, can be used, whereby a negative pattern can be formed.
酸発生剤の量は、 酸性基を有する脂環式ォレフイン樹脂 1 0 0重量部に対し て、 通常 0. 5〜1 0 0重量部、 好ましくは 1〜5 0重量部、 より好ましくは 1 0〜 3 0重量部である。 酸発生剤の使用量が少なすぎると、 残膜率や解像性が悪 くなるおそれがあり、 逆に、 多すぎると、 耐熱性や光透過性が低下するおそれが ある。 The amount of the acid generator is usually 0.5 to 100 parts by weight, preferably 1 to 50 parts by weight, more preferably 10 to 100 parts by weight, based on 100 parts by weight of the alicyclic resin having an acidic group. To 30 parts by weight. If the amount of the acid generator is too small, the residual film ratio and the resolution may be deteriorated. Conversely, if the amount is too large, the heat resistance and the light transmittance may be reduced.
本発明において使用する (C) 成分の架橋剤は、 脂環式ォレフイン樹脂と反応 して脂環式ォレフイン樹脂間に架橋構造を形成する作用を有するものであり、 具 体的には、 2以上の反応性基を有する化合物である。 反応性基としては、 例え ば、 アミノ基、 カルボキシル基、 ヒドロキシル基、 エポキシ基、 イソシァネート 基、 ビュル基などが挙げられる。 The crosslinking agent of the component (C) used in the present invention has an action of forming a crosslinked structure between the alicyclic olefin resins by reacting with the alicyclic olefin resin. Is a compound having a reactive group of Examples of the reactive group include an amino group, a carboxyl group, a hydroxyl group, an epoxy group, an isocyanate group, and a butyl group.
架橋剤の具体例としては、 へキサメチレンジァミンなどの脂肪族ポリアミン 類; 4 , 4 ' —ジアミノジフエニルエーテル、 ジアミノジフエニルスルフォンな どの芳香族ポリアミン類; 2 , 6—ビス (4 ' 一アジドベンザル) シクロへキサ ノン、 4, 4 ' —ジアジドジフエニルスルフォンなどのアジド化合物;ナイ口 ン、 ポリへキサメチレンジアミンテレレフタルアミ ド、 ポリへキサメチレンイソ フタルアミ ドなどのポリアミ ド類; N, N, Ν' , N' , N r , 一 (へキサ ァノレコキシメチル) メラミンなどのメラミン類; Ν, Ν' , Ν , Ν — (テト ラアルコキシメチル) グリコールゥリルなどのダリコールゥリル類;エチレング リ コールジ (メタ) アタリレート、 エポキシアタリレート樹脂などのアタリレー
ト化合物;へキサメチレンジィソシァネート系ポリイソシァネート、 ィソホロン ジイソシァネート系ポリイソシァネート、 トリレンジイソシァネート系ポリイソ シァネートなどのイソシァネート系化合物;水添ジフエニルメタンジィソシァネ ート系ポリイソシァネート ; 1, 4—ジ一 (ヒ ドロキシメチル) シクロへキサ ン、 1, 4ージ一 (ヒ ドロキシメチル) ノルポルナン; 1 , 3 , 4—トリヒ ドロ キシシク口へキサン;脂環式構造含有のエポキシ化合物または樹脂などが例示さ れる。 これらは、 一種でも二種以上の混合物として使用してもよい。 Specific examples of the crosslinking agent include aliphatic polyamines such as hexamethylene diamine; aromatic polyamines such as 4,4'-diaminodiphenyl ether and diaminodiphenyl sulfone; 2,6-bis (4 ' Azidobenzal) Azide compounds such as cyclohexanone, 4,4'-diazidodiphenylsulfone; polyamides such as nitrobenzene, polyhexamethylene diamine terephthalamide, and polyhexamethylene isophthalamide; N, N, Ν ', N ', N r, melamines such as melamine (hexa § Bruno record carboxymethyl into) one; Ν, Ν ', Ν, Ν - Darikoruuriru such (tetra- alkoxymethyl) glycol © Lil Attalays such as ethylene glycol di (meth) acrylate and epoxy acrylate resins Compounds; isocyanate compounds such as hexamethylene diisocyanate polyisocyanate, isofolone diisocyanate polyisocyanate, and tolylene diisocyanate polyisocyanate; hydrogenated diphenylmethane diisocyanate Polyisocyanate; 1,4-di- (hydroxymethyl) cyclohexane, 1,4-di- (hydroxymethyl) norporanane; 1,3,4-trihydroxycyclohexane; containing alicyclic structure Examples of the epoxy compound or resin are given below. These may be used alone or as a mixture of two or more.
これらの架橋剤の中でも、 耐熱性の観点から、 N—アルコキシメチル化メラミ ンゃ N—アルコキシメチル化グリコールゥリルが好ましい。 これらの化合物は、 P L— 1 1 7 0、 P L— 1 1 7 4、 U F R 6 5、 C YME L 3 0 0、 C YME L 3 0 3 (以上、 三井サイテック社製)、 B X— 4 0 0 0、 二力ラック MW— 3 0、 MX 2 9 0 (以上、 三和ケミカル社製) などの市販品として入手容易であ る。 また、 感放射線性樹脂組成物から形成された樹脂膜の基板等に対する密着性 を良好にする観点からは、 架橋剤として、 イソシァネート系化合物を用いるのが 好ましい。 Among these crosslinking agents, N-alkoxymethylated melamine ゃ N-alkoxymethylated glycoluril is preferred from the viewpoint of heat resistance. These compounds are PL-117, PL-117, UFR65, CYMEL300, CYMEL303 (all manufactured by Mitsui Cytec), BX-400. It is easily available as a commercial product such as 0, 2-stroke rack MW-30, MX290 (above, manufactured by Sanwa Chemical Co., Ltd.). From the viewpoint of improving the adhesion of the resin film formed from the radiation-sensitive resin composition to a substrate or the like, it is preferable to use an isocyanate-based compound as the crosslinking agent.
架橋剤の量は、 脂環式ォレフイン樹脂 1 0 0重量部に対して、 通常 1〜1 0 0 重量部、 好ましくは 5〜 8 0重量部、 さらに好ましくは 1 0〜 7 0重量部、 最も 好ましくは 2 0〜 5 0重量部である。 架橋剤の使用量が多すぎても少なすぎても 耐熱性、 電気特性、 吸水性が不十分となり易い。 The amount of the crosslinking agent is usually 1 to 100 parts by weight, preferably 5 to 80 parts by weight, more preferably 10 to 70 parts by weight, and most preferably 100 to 70 parts by weight, based on 100 parts by weight of the alicyclic resin. Preferably it is 20 to 50 parts by weight. If the amount of the cross-linking agent used is too large or too small, the heat resistance, electric properties, and water absorption are likely to be insufficient.
本発明において使用する (D) 成分の溶剤は、 前記各成分を溶解若しくは分散 するのに適したものであり、 感放射線性樹脂組成物用の溶剤として一般に用いら れるものが使用できる。 このような溶剤としては、 例えば、 メタノール、 ェタノ ール、 プロパノール、 ブタノール、 3—メ トキシ— 3—メチルブタノールなどの アルコール類;テトラヒ ドロフラン、 ジォキサンなどの環状エーテル類;メチル セロソ /レブアセテート、 ェチノレセロソ /レブアセテートなどのセロソノレブエステ レ 類;エチレングリコーノレモノメチノレエーテノレ、 エチレングリコールモノエチノレエ ーテノレ、 エチレングリコーノレモノプロピルエーテ,レ、 エチレングリコーノレモノ t
一プチ/レエーテ /レ、 プロピレングリコー/レモノエチノレエーテ /レ、 プロピレングリ コールモノプロピルエーテル、 プロピレングリコールモノブチルエーテル、 ジェ チレングリコーノレモノメチ /レエーテノレ、 ジエチレングリコ一ノレモノェチレエーテ ル、 ジプロピレンダリコールモノメチルエーテルなどのグリコールエーテル類; プロピレングリコールプロピルエーテルァセテ一トなどのプロピレンダリコール アルキルエーテルアセテート類;ベンゼン、 トルエン、 キシレンなどの芳香族炭 化水素類;メチルェチルケトン、 シクロへキサノン、 2—ヘプタノン、 4—ヒド 口キシー 4—メチル一 2—ペンタノンなどのケトン類; 2—ヒドロキシプロピオ ン酸ェチル、 2—ヒドロキシ一 2—メチルプロピオン酸ェチル、 2—ヒドロキシ — 2—メチルプロピオン酸ェチル、 エトキシ酢酸ェチル、 ヒドロキシ酢酸ェチ ル、 2—ヒドロキシ一 3—メチルブタン酸メチル、 3—メ トキシプロピオン酸メ チル、 3—メ トキシプロピオン酸ェチル、 3—エトキシプロピオン酸ェチル、 3 —エトキシプロピオン酸メチル、 酢酸ェチル、 酢酸ブチル、 乳酸ェチルなどのェ ステル類; N—メチルホルムアミ ド、 N, N—ジメチルホルムアミド、 N—メチ ル一 2—ピロリ ドン、 N—メチルァセトアミ ド、 N, N—ジメチルァセトアミ ド、 ジメチルスルホキシド、 γ—ブチルラクトンなどの非プロトン性極性溶剤; 等が挙げられる。 これらの溶剤は、 各成分を均一に溶解若しくは分散させるのに 十分な量で使用される。 The solvent of the component (D) used in the present invention is suitable for dissolving or dispersing the above-mentioned components, and those generally used as a solvent for the radiation-sensitive resin composition can be used. Examples of such a solvent include alcohols such as methanol, ethanol, propanol, butanol, 3- methoxy- 3 -methylbutanol; cyclic ethers such as tetrahydrofuran and dioxane; methyl celloso / levacetate, ethinoreseroso Cerro Seo Norev Este les such as / rev acetate, ethylene glycol Honoré mono-methylol Honoré ether Honoré, ethylene glycol mono ethyl Honoré et Tenore, ethylene glycol Honoré monopropyl ether, les, ethylene glycol Honoré mono t Petit / Leate / Le, Propylene Glycolate / Lemonoethinoleate / Le, Propylene Glycol Monopropyl Ether, Propylene Glycol Monobutyl Ether, Ethylene Glycolate Monomethyle / Leetheneole, Diethylene Glycoleone Monoethylate, Dipropylene Glycol ethers such as dalicol monomethyl ether; propylene dalicol alkyl ether acetates such as propylene glycol propyl ether acetate; aromatic hydrocarbons such as benzene, toluene, xylene; methylethyl ketone, cyclohexanone Ketones such as, 2-heptanone, 4-hydroxy 4-methyl-12-pentanone; ethyl 2-hydroxypropionate, ethyl 2-hydroxy-12-methylpropionate, 2-hydroxy — Ethyl 2-methylpropionate, Ethyl ethoxyacetate, Ethyl hydroxyacetate, Methyl 2-hydroxy-13-methylbutanoate, Methyl 3-methoxypropionate, Ethyl 3-methoxypropionate, 3-Ethoxypropionic acid Esters such as ethyl, 3-ethoxymethyl propionate, ethyl acetate, butyl acetate, and ethyl lactate; N-methylformamide, N, N-dimethylformamide, N-methyl-1-pyrrolidone, N-methylacetamide And aprotic polar solvents such as N, N-dimethylacetamide, dimethylsulfoxide, and γ-butyllactone; and the like. These solvents are used in an amount sufficient to uniformly dissolve or disperse each component.
本発明の感放射線性樹脂組成物には、 ス トリエーシヨン (塗布すじあと) の防 止、 現像性の向上などの目的で、 ポリオキシエチレンラウリルエーテル、 ポリオ キシエチレンジラウレートなどのノニオン系界面活性剤;新秋田化成社製エフト ップシリーズ、 大日本インキ化学工業社製メガファックシリーズ、 住友スリーェ ム社製フロラ一ドシリーズ、 旭硝子社製アサヒガードシリーズなどのフッ素系界 面活性剤;信越化学社製:^ Vレガノシロキサンポリマー Κ Ρシリーズなどのシラン 系界面活性剤;共栄社油脂化学工業社製ポリフローシリーズなどのアクリル酸共 重合体系界面活性剤;などの各種界面活性剤を含有させることができる。 界面活 性剤は、 感放射線性樹脂組成物の固形分 (溶剤以外の成分) 1 0 0重量部に対し
て、 通常 2重量部以下、 好ましくは 1重量部以下の量で、 必要に応じて用いられ る。 The radiation-sensitive resin composition of the present invention contains a nonionic surfactant such as polyoxyethylene lauryl ether or polyoxyethylene dilaurate for the purpose of preventing striation (after coating streaks) and improving developability; Fluorinated surfactants, such as Shin-Akita Kaseisha's EFTOP series, Dainippon Ink and Chemicals' Megafac series, Sumitomo 3LEM's Florado series, and Asahi Glass's Asahiguard series; Various surfactants, such as silane-based surfactants such as V-Leganosiloxane Polymer II series; acrylic acid copolymer-based surfactants such as Polyflow series manufactured by Kyoeisha Yushi Kagaku Kogyo Co., Ltd .; The surfactant is used in an amount of 100 parts by weight based on the solid content (components other than the solvent) of the radiation-sensitive resin composition. Usually, it is used in an amount of 2 parts by weight or less, preferably 1 part by weight or less, if necessary.
本発明の感放射線性樹脂組成物には、 基板との接着性を向上させる目的で、 γ —グリシドキシプロピルトリメトキシシランなどの官能性シランカップリング剤 などを接着助剤として添加してもよい。 接着助剤の量は、 酸性基を有する脂環式 ォレフィン樹脂 1 0 0重量部に対して、 通常 2 0重量部以下、 好ましくは 0 . 0 5〜: L 0重量部、 より好ましくは 1〜1 0重量部である。 The radiation-sensitive resin composition of the present invention may be added with a functional silane coupling agent such as γ-glycidoxypropyltrimethoxysilane as an adhesion aid for the purpose of improving the adhesion to the substrate. Good. The amount of the adhesion promoter is usually 20 parts by weight or less, preferably 0.05 to 0.5 parts by weight, more preferably 1 to 0 parts by weight, based on 100 parts by weight of the alicyclic olefin resin having an acidic group. It is 10 parts by weight.
さらに、 本発明の感放射線性樹脂組成物には、 必要に応じて増感剤、 帯電防止 剤、 保存安定剤、 消泡剤、 顔料、 染料などを含有させてもよい。 Further, the radiation-sensitive resin composition of the present invention may contain a sensitizer, an antistatic agent, a storage stabilizer, an antifoaming agent, a pigment, a dye, and the like, if necessary.
上記してきた各成分を、 常法に従って混合し、 溶剤に溶解若しくは分散させて 感放射線性樹脂組成物を調製する。 調製された本発明の感放射線性樹脂組成物の 固形分濃度は、 特に限定されないが、 通常 5〜4 0重量%である。 The components described above are mixed according to a conventional method, and dissolved or dispersed in a solvent to prepare a radiation-sensitive resin composition. The solid concentration of the prepared radiation-sensitive resin composition of the present invention is not particularly limited, but is usually 5 to 40% by weight.
調製された感放射線性樹脂組成物は、 均一な溶液であることが好ましく、 その 場合には、 0 . 2〜1 /z m程度のフィルタ等を用いて異物などを除去した後、 使 用に供することが好ましい。 The prepared radiation-sensitive resin composition is preferably a homogeneous solution. In this case, use a filter or the like of about 0.2 to 1 / zm to remove foreign substances and then use the composition. Is preferred.
本発明の感放射線性樹脂組成物は、 ディスプレイ表示素子、 集積回路素子など の素子や、 液晶ディスプレイ用カラーフィルタなどの保護膜、 素子表面や配線を 平坦化するための平坦化膜、 電気絶縁性を保っための絶縁膜 (例えば、 薄型トラ ンジスタ型液晶表示素子や集積回路素子の電気絶縁膜である層間絶縁膜及びソル ダーレジスト膜などを含む) のような各種の電子部品用樹脂膜の材料として好適 である。 The radiation-sensitive resin composition of the present invention can be used for a device such as a display device or an integrated circuit device, a protective film such as a color filter for a liquid crystal display, a flattening film for flattening the device surface or wiring, and an electric insulating property. Of various resin films for electronic components, such as insulating films (for example, including interlayer insulating films and solder resist films, which are electric insulating films for thin transistor-type liquid crystal display devices and integrated circuit devices) to maintain It is suitable as.
本発明の感放射線性樹脂組成物を基板上に塗工して樹脂膜を形成し、 該樹脂膜 の上からパターン状に活性放射線を照射して、 樹脂膜に潜像パターンを形成す る。 潜像パターンを有する樹脂膜と現像液とを接触させることにより、 パターン を顕在化させることができる。 The radiation-sensitive resin composition of the present invention is applied on a substrate to form a resin film, and active radiation is irradiated in a pattern from above the resin film to form a latent image pattern on the resin film. By bringing the resin film having the latent image pattern into contact with the developer, the pattern can be made obvious.
基板に樹脂膜を形成する方法は、 基板表面に本発明の感放射線性樹脂組成物を 塗布、 乾燥して基板上に直接樹脂膜を形成する方法であっても、 ポリエチレンテ
レフタレ一トフイルム、 ポリプロピレンフィルム、 ポリエチレンフィルムなどの 樹脂からなるフィルムなどの支持体の少なくとも片面に本発明の感放射線性樹脂 組成物を塗布、 乾燥して樹脂膜を支持体に形成した後、 支持体付き樹脂膜を基板 に重ね合わせる方法であってもよい。 支持体付き樹脂膜を基板に重ね合わせる 際、 加圧ラミネータ、 加圧プレス、 真空ラミネータ、 真空プレス、 ロールラミネ ータなどの加圧機を使用して加熱圧着するのが望ましい。 加熱圧着時の温度は、 通常30〜250°0、 好ましくは 70〜200°C、 圧着力は、 通常 10 k P a〜 20MP a、 好ましくは 1 O O kP a〜l OMPa、 圧着時間は、 通常 30秒間 〜5時間、 好ましくは 1分〜 3時間である。 加熱圧着に際しては、 通常 10 O k P a〜 1 P a、 好ましくは 40 kPa〜10P aに雰囲気の圧力を調整すること が望ましい。 The method for forming a resin film on a substrate is a method in which the radiation-sensitive resin composition of the present invention is applied to the surface of the substrate and dried to form a resin film directly on the substrate. The radiation-sensitive resin composition of the present invention is applied to at least one surface of a support such as a resin film such as a resin film, a polypropylene film, or a polyethylene film, and dried to form a resin film on the support. A method may be used in which a resin film with a coating is overlaid on a substrate. When the resin film with the support is superimposed on the substrate, it is preferable to heat and press using a pressing machine such as a pressure laminator, a pressure press, a vacuum laminator, a vacuum press, and a roll laminator. The temperature at the time of heat compression is usually 30 to 250 ° C, preferably 70 to 200 ° C, the compression force is usually 10 kPa to 20 MPa, preferably 1 OO kPa to OMPa, and the compression time is usually The duration is 30 seconds to 5 hours, preferably 1 minute to 3 hours. At the time of thermocompression bonding, it is desirable to adjust the pressure of the atmosphere to usually 10 OkPa to 1 Pa, preferably 40 kPa to 10 Pa.
基板表面や支持体に本発明の感放射線性樹脂組成物を塗布する方法としては、 例えば、 スプレー法、 ロールコート法、 回転塗布法などの各種の方法を採用する ことができる。 次いで、 得られた塗膜を、 加熱により乾燥し、 流動性のない樹月旨 膜を得る。 基板表面に直接樹脂膜を形成する場合の加熱条件は、 各成分の種類、 配合割合などによっても異なるが、 通常 60〜120¾で 10〜600秒間程度 である。 基板表面に感放射線性樹脂組成物を塗布、 乾燥して、 基板上に直接樹脂 膜を形成する方法において、 乾燥のための加熱を、 一般にプリべーク (P r e— Ba k e) とレ、う。 As a method of applying the radiation-sensitive resin composition of the present invention to a substrate surface or a support, various methods such as a spray method, a roll coating method, and a spin coating method can be employed. Next, the obtained coating film is dried by heating to obtain a lusterless film having no fluidity. The heating conditions for forming the resin film directly on the substrate surface vary depending on the type and blending ratio of each component, but are usually about 60 to 120 ° for about 10 to 600 seconds. In a method in which a radiation-sensitive resin composition is applied to the surface of a substrate and dried to form a resin film directly on the substrate, heating for drying is generally performed using a pre-baking method. U.
得られた樹脂膜に活性放射線を照射し、 樹脂膜に潜像パターンを形成する。 活 性放射線の種類は、 特に制限されず、 例えば、 紫外線、 遠紫外線、 X線、 電子 線、 プロトンビーム線などが挙げられ、 これらの中でも、 可視光線、 紫外線が好 ましい。 照射する放射線量は、 樹脂膜の種類や厚みにより任意に設定することが できる。 パターンの形成は、 マスクを介して活性放射線を照射する方法によって も、 電子線などで直接描画する方法によってもよい。 The obtained resin film is irradiated with actinic radiation to form a latent image pattern on the resin film. The type of the actinic radiation is not particularly limited, and examples thereof include ultraviolet rays, far ultraviolet rays, X-rays, electron beams, and proton beam rays. Of these, visible rays and ultraviolet rays are preferable. The radiation dose for irradiation can be arbitrarily set depending on the type and thickness of the resin film. The pattern may be formed by a method of irradiating actinic radiation through a mask or a method of directly drawing with an electron beam or the like.
放射線照射後、 基板上の潜像パターンを有する樹月旨膜と現像液とを接触させる ことにより、 照射部を除去し、 潜像パターンを顕在化 (現像) する。 現像前に、
必要に応じて加熱 (PEB処理: P o s t Ex p o s u r e Ba k e) を行 うことができる。 PEB処理を行うことにより、 現像液に溶解し除去されるべき 不要な樹脂成分などの現像残渣を減らすことができる。 脂環式ォレフイン樹脂が アルカリ溶解性の極性基、 特に酸性基を有していると、 現像液による流出が、 よ り容易になるので好ましい。 After irradiation, the exposed part is removed by bringing the luster film having the latent image pattern on the substrate into contact with the developing solution, and the latent image pattern is revealed (developed). Before development Heating (PEB treatment: Post Ex posure Bake) can be performed if necessary. By performing the PEB treatment, development residues such as unnecessary resin components which should be dissolved and removed in the developer can be reduced. It is preferable that the alicyclic resin has an alkali-soluble polar group, particularly an acidic group, because the outflow by the developer becomes easier.
現像液は、 一般に、 アルカリ化合物を水に溶解した水性液である。 アルカリ化 合物としては、 例えば、 水酸ィ匕ナトリウム、 水酸化カリウム、 炭酸ナトリウム、 ケィ酸ナトリウム、 メタケイ酸ナトリウム、 アンモニア水などの無機アルカリ 類;ェチルァミン、 n—プロピルァミンなどの第一級ァミン類;ジェチルァミ ン、 ジ一 n—プロピルァミンなどの第二級ァミン類; トリェチルァミン、 メチル ジェチ ァミン、 Ν—メチルピロリ ドンなどの第三級ァミン類;ジメチルエタノ ールァミン、 トリエタノールァミンなどのアルコールアミン類;テトラメチルァ ンモニゥムヒドロキシド、 テトラェチルアンモニゥムヒドロキシド、 テトラプチ^レアンモユウムヒドロキシド、 コリンなどの第四級アンモニゥム塩; ピロール、 ピぺリジン、 1, 8—ジァザビシクロ [5. 4. 0] ゥンデ力一 7—ェン、 1, 5—ジァザビシクロ [4. 3. 0] ノナ一 5—ェンなどの環状アミン類;等が挙 げられる。 これらアルカリ化合物は、 それぞれ単独で、 あるいは 2種以上を混合 して用いることができる。 The developer is generally an aqueous solution in which an alkali compound is dissolved in water. Examples of the alkali compound include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia; and primary amines such as ethylamine and n-propylamine. Secondary amines such as getylamine and di-n-propylamine; tertiary amines such as triethylamine, methylethylamine and Ν-methylpyrrolidone; alcoholamines such as dimethylethanolamine and triethanolamine; tetramethylamine. Quaternary ammonium salts such as ammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, and choline; pyrrole, pyridin, 1,8-diazabicyclo [5.4.0 ] 7-en, 1, 5-j Bicyclo [4.3.2 0] cyclic amines, such as nona one 5-E down; Hitoshigakyo is up. These alkali compounds can be used alone or in combination of two or more.
現像液に、 メタノール、 エタノールなどの水溶性有機溶剤や界面活性剤などを 適当量添加することもできる。 An appropriate amount of a water-soluble organic solvent such as methanol or ethanol, a surfactant or the like can be added to the developer.
現像液としては、 感放射線性樹脂組成物を用いて形成された樹脂膜の照射部を 1 μπιΖ分以上の速度で溶解し、 かつ、 樹脂膜の未照射部を 0. 5μπιΖ分以下 の速度で溶解するものが好ましく、 それによつて、 特に優れた解像度と残膜率を 得ることができる。 このような観点から、 本発明の感放射線性樹脂組成物を用い た場合、 現像液としては、 濃度が 0. 01重量%〜1. 0重量%、 好ましくは 0. 1〜0. 8重量0 /0のテトラメチルアンモニゥムヒ ドロキシド水溶液を用いる のが望ましい。
現像時間は、 通常 3 0〜1 8 0秒間である。 現像液と潜像パターンを有する榭 脂膜との接触方法は、 特に制限されず、 例えば、 パドル法、 スプレー法、 デイツ ビング法などを採用することができる。 現像温度は、 特に制限されないが、 通常 1 5〜3 5 、 好ましくは 2 0〜3 O :である。 As the developer, the irradiated portion of the resin film formed using the radiation-sensitive resin composition is dissolved at a rate of 1 μπιΖ min or more, and the unirradiated portion of the resin film is dissolved at a rate of 0.5 μπιΖ min or less. It is preferable to dissolve it, so that particularly excellent resolution and residual film ratio can be obtained. From this point of view, in the case of using a radiation-sensitive resin composition of the present invention, as the developer, the concentration is 0.01% to 1. 0 wt%, preferably 0.1 to 0.8 wt 0 It is desirable to use an aqueous solution of / 0 tetramethylammonium hydroxide. The development time is usually 30 to 180 seconds. The method of contacting the developer with the resin film having a latent image pattern is not particularly limited, and for example, a paddle method, a spray method, a dipping method, or the like can be employed. Although the development temperature is not particularly limited, it is usually 15 to 35, preferably 20 to 30 :.
このようにして、 基板上に目的とするパターンを有する樹脂膜が形成される。 現像により樹脂膜にパターンを形成した後、 必要に応じて、 基板上、 基板裏 面、 基板端部に残る不要な現像残渣を除去するために、 該基板とリンス液とを常 法により接触させことができる。 リンス液と接触させた基板は、 通常、 圧縮空気 や圧縮窒素で乾燥させることによって、 基板上のリンス液が除去される。 必要に 応じて、 パターンを形成した樹脂膜の表面に、 活性放射線を全面照射することも できる。 Thus, a resin film having a target pattern is formed on the substrate. After forming a pattern on the resin film by development, if necessary, the substrate and the rinsing liquid are brought into contact with each other in a usual manner to remove unnecessary development residues remaining on the substrate, the back surface of the substrate, and the edge of the substrate. be able to. The substrate in contact with the rinsing liquid is usually dried with compressed air or compressed nitrogen to remove the rinsing liquid on the substrate. If necessary, the entire surface of the patterned resin film can be irradiated with actinic radiation.
基板の樹脂膜にパターンを形成した後、 必要に応じて、 加熱 (ポストべーク: P o s t B a k e ) 〖こより樹脂膜を硬化することができる。 加熱方法は、 ホッ トプレート、 オーブンなどの加熱装置により行われる。 加熱温度は、 通常 1 5 0 〜2 5 0で、 好ましくは 1 8 0〜2 2 0でであり、 加熱時間は、 例えば、 ホット プレートを用いる場合、 通常 5〜6 0分間、 オーブンを用いる場合、 通常 3 0〜 9 0分間である。 ポストべークは、 低酸素雰囲気中、 具体的には酸素濃度 1 0 p p m以下の雰囲気中で行うことが好ましい。 After forming a pattern on the resin film of the substrate, the resin film can be cured by heating (postbaking: Postbak) if necessary. The heating method is performed by a heating device such as a hot plate and an oven. The heating temperature is usually 150 to 250, preferably 180 to 220.The heating time is, for example, when using a hot plate, usually 5 to 60 minutes, when using an oven. Usually, it is 30 to 90 minutes. Post baking is preferably performed in a low-oxygen atmosphere, specifically, an atmosphere having an oxygen concentration of 10 ppm or less.
以上詳述したとおり、 本発明の感放射線性樹脂組成物を用いて、 基板上に樹脂 膜を形成し、 該樹脂膜の上からパターン状に活性放射線を照射して、 樹脂膜に潜 像パターンを形成し、 次いで、 樹脂膜と現像液とを接触させることによりパター ンを顕在化させるパターン形成方法により、 樹脂膜にパターンを形成する。 バタ ーンが形成された樹脂膜は、 保護膜、 平坦化膜、 層間絶縁膜などの電子部品用樹 脂膜として好適に利用される。 実施例 As described in detail above, a resin film is formed on a substrate using the radiation-sensitive resin composition of the present invention, and active radiation is irradiated in a pattern from above the resin film to form a latent image pattern on the resin film. Then, a pattern is formed on the resin film by a pattern forming method in which the pattern is exposed by bringing the resin film into contact with a developer. The resin film on which the pattern is formed is suitably used as a resin film for electronic components such as a protective film, a planarizing film, and an interlayer insulating film. Example
以下に合成例及び実施例を挙げて、 本発明をより具体的に説明する。 各例中の
部及び%は、 特に断りのない限り重量基準 (質量基準) である。 Hereinafter, the present invention will be described more specifically with reference to Synthesis Examples and Examples. In each case Parts and percentages are by weight (weight basis) unless otherwise specified.
[合成例 1] [Synthesis example 1]
8—ヒ ドロキシカルボ二ルテトラシクロ [4. 4. 0. I2' 5. I7' 10] —ド デカー 3—ェン 70部、 テトラシクロ [4. 4. 0. I2' 5. I 7' 10] —ドデカ 一 3—ェン 30部、 1—へキセン 10部、 1, 3—ジメシチルイミダゾリジン一 2—イリデン) (トリシクロへキシルホスフィン) ベンジリデンルテニウムジク ロリ ド 0. 04部、 テトラヒドロフラン 400部を、 窒素置換したガラス製耐圧 反応容器に仕込み、 70°Cに加熱して 2時間攪拌して反応溶液を得た。 この反応 溶液中に、 モノマーが残留していないことをガスクロマトグラフィーにて確認し た。 得られた反応溶液を大量の n—へキサン中に注いで固形分を析出させた。 得 られた固形分を n—へキサンで洗浄した後、 100°Cで 18時間減圧乾燥し、 白 色固体の開環メタセシス共重合体を得た。 8-Hydroxycarbonyltetracyclo [4. 4. 0. I 2 ' 5. I 7 ' 10 ] — Dodeca 3-ene 70 parts, tetracyclo [4. 4. 0. I 2 ' 5. I 7 ' 10 30 parts of dodeca-3-ene, 10 parts of 1-hexene, 1,3-dimesitylimidazolidine-12-ylidene) (tricyclohexylphosphine) benzylidene ruthenium dichloride 0.04 parts, tetrahydrofuran 400 The part was charged into a nitrogen-substituted glass pressure-resistant reaction vessel, heated to 70 ° C. and stirred for 2 hours to obtain a reaction solution. It was confirmed by gas chromatography that no monomer remained in the reaction solution. The obtained reaction solution was poured into a large amount of n-hexane to precipitate a solid. The obtained solid was washed with n-hexane and dried under reduced pressure at 100 ° C. for 18 hours to obtain a ring-opening metathesis copolymer as a white solid.
攪拌機付きオートクレープに、 この開環メタセシス共重合体 100部、 テトラ ヒドロフラン 400部、 水素添加触媒としてパラジウム Zカーボン (10%パラ ジゥム) 5部を添加して、 水素圧 1. 0MPa、 60°Cで 8時間水素化した。 こ の反応溶液を濾過した後、 上記と同様に大量の n—へキサン中で凝固、 乾燥して 水素化率 100% (iH— NMRスペクトルにより測定) の酸性基を有する脂環 式ォレフイン樹脂 (ポリマー a) を得た。 100 parts of this ring-opening metathesis copolymer, 400 parts of tetrahydrofuran, and 5 parts of palladium Z-carbon (10% palladium) as a hydrogenation catalyst were added to an autoclave equipped with a stirrer, and hydrogen pressure was 1.0 MPa, 60 ° C. For 8 hours. After the reaction solution is filtered, it is coagulated and dried in a large amount of n-hexane as described above, and an alicyclic olefin resin having an acidic group having a hydrogenation rate of 100% (determined by iH-NMR spectrum) ( Polymer a) was obtained.
[合成例 2] [Synthesis example 2]
8—ヒ ドロキシカルボ二ルテトラシクロ [4. 4. 0. I2' 5. I7' 10] —ド デカ一 3—ェンの量を 78部、 テトラシクロ [4. 4. 0. I2' 5. 17· 10] - ドデ力一 3—ェンの量を 22部、 1—へキセンの量を 8部にそれぞれ変えたこと 以外は、 合成例 1と同様にして、 水素化率 100%の酸性基を有する脂環式ォレ フィン樹脂 (ポリマー b) を得た。 8-Hydroxycarbonyltetracyclo [4. 4. 0. I 2 ' 5. I 7 ' 10 ] — 78 parts of dodeca-3-ene, tetracyclo [4. 4. 0. I 2 ' 5 . 1 7 · 10 ]-Hydrogenation rate 100% in the same manner as in Synthesis Example 1 except that the amount of 3-deene was changed to 22 parts and the amount of 1-hexene was changed to 8 parts. An alicyclic olefin resin (polymer b) having an acidic group was obtained.
[合成例 3] [Synthesis example 3]
8—ヒドロキシカルボ二ルテトラシクロ [4. 4. 0. I2' 5. I7' 10] —ド デカ一 3—ェンを 71部、 テトラシクロ [4. 4. 0. I2' 5. I7' 10] —ドデ
力一 3—ェンを 29部、 1一へキセンを 20部にそれぞれ変えたこと以外は、 合 成例 1と同様にして、 水素化率 100%の酸性基を有する脂環式ォレフイン樹脂8-hydroxy-carbonylation Rutetorashikuro [4. 4. 0. I 2 '5 I 7.' 10] -. 71 parts of de-deca one 3-E down, tetracyclo [4. 4. 0. I 2 '5 I 7 '10] - de de An alicyclic olefin resin having an acid group with a hydrogenation rate of 100% was prepared in the same manner as in Synthesis Example 1 except that the amount of 3-ene was changed to 29 parts and the amount of 11-hexene was changed to 20 parts.
(ポリマー c) を得た。 (Polymer c) was obtained.
[合成例 4] [Synthesis example 4]
8—ヒドロキシカルボ二ルテトラシクロ [4. 4. 0. I2' 5. I 7' 10] ドデ 力一 3—ェンを 76部、 テトラシクロ [4. 4. 0. I 2' 5. I 7' 10] ドデ力一 3 _ェンを 24部、 1—へキセンを 8部にそれぞれ変えたこと以外は、 合成例 1 と同様にして、 水素化率 100%の酸性基を有する脂環式ォレフイン樹脂 (ポリ マー d) を得た。 8-hydroxy-carbonylation Rutetorashikuro [4. 4. 0. I 2 '5 . I 7' 10] dodecane force one 3-E down the 76 parts, tetracyclo [4. 4. 0. I 2 '5 . I 7 '10] dodecane force one 3 _ E down the 24 parts, except for changing the respective 8 parts hexene, in the same manner as in synthesis example 1, alicyclic with hydrogenation rate of 100% of the acid groups The formula resin (polymer d) was obtained.
[合成例 5] [Synthesis example 5]
特開平 1 1—52574号公報の合成例 5に開示されている方法において、 触 媒投入時の温度を 6 O から 80でに、 重合保持温度を 8 Otから 110°Cに、 それぞれ変えたこと以外は、 該公報の合成例 5に記載の方法に従って、 水素化率 100%、 加水分解率 75%の酸性基を有する脂環式ォレフイン樹脂 (ポリマー e) を得た。 具体的には、 以下の方法により、 ポリマー eを合成した。 In the method disclosed in Synthesis Example 5 of JP-A-11-52574, the temperature at the time of catalyst input was changed from 6 O to 80, and the polymerization holding temperature was changed from 8 Ot to 110 ° C. Other than the above, an alicyclic olefin resin having an acidic group (polymer e) having a hydrogenation rate of 100% and a hydrolysis rate of 75% was obtained according to the method described in Synthesis Example 5 of the publication. Specifically, polymer e was synthesized by the following method.
8—メチル一8—メ トキシカルボニルテトラシクロ [4. 4. 0. I 2' 5. 1 7' 10] -3-ドデセン 250部、 1—へキセン 180部、 及びトルエン 750部 を窒素置換した反応容器に仕込み、 80°Cに加熱した。 これに、 トリェチルアル ミニゥム (1. 5モル Z 1 ) のトルエン溶液 0.62部、 t e r t— C4H5OH/ CH3OHで変性 ( t e r t _C4H9OHZCH3OH/W=0. 35/0. 3Z 1 ; モル比) した WC 16溶液 (濃度 0.05モルノ 1 ) 3. 7部を加え、 1 1 0でで 3時間加熱撹拌して、 開環重合体溶液を得た。 この重合反応における重合 転化率は 90%であった。 8-methyl-one 8-main-butoxycarbonyl tetracyclo [4. 4. 0. I 2 '5 . 1 7' 10] -3- dodecene 250 parts, 180 parts of 1-hexene, and 750 parts of toluene was purged with nitrogen The reaction vessel was charged and heated to 80 ° C. This, Toryechiruaru Miniumu (1.5 mol Z 1) toluene solution 0.62 parts of, tert- C 4 H 5 OH / CH 3 OH in modified (tert _C 4 H 9 OHZCH 3 OH / W = 0. 35/0. 3Z 1; molar ratio) was WC 1 6 solution (concentration 0.05 Moruno 1) 3.7 parts was added and heating for 3 hours stirring at 1 1 0, to obtain a ring-opening polymer solution. The polymerization conversion rate in this polymerization reaction was 90%.
得られた重合体溶液 4, 000部をオートクレーブに入れ、 これに RuHC l (CO) [P (C6H5) 3] 30. 48部を加えて、 水素ガス圧を 100 k g/c m2、 反応温度 165°Cの条件で 3時間加熱撹拌した。 得られた反応溶液を冷却 した後、 水素ガスを放圧し、 水素添加重合体溶液を得た。 こうして得られた水素
添加重合体を大量のメタノール中に注いで、 重合体を凝固させた。 このようにし て得られた水素添加重合体の水素化率は、 実質上 100%であった。 得られた水 素添加重合体 1 00部、 N—メチル一 2—ピロリ ドン 1 00部、 プロピレングリ コール 500部、 水酸ィ匕カリウム (濃度 85%) 84. 5部を反応器に仕込み 1 90°Cで 1. 5時間加熱撹拌した。 得られた反応溶液を大量の水、 テトラヒドロ フラン及び塩酸の混合溶液に注いで加水分解物を凝固させた。 凝固ポリマーを水 洗、 乾燥して加水分解重合体としてポリマー eを得た。 得られた加水分解重合体 の加水分解率は 75 %であった。 4,000 parts of the obtained polymer solution was put in an autoclave, and 30.48 parts of RuHCl (CO) [P (C 6 H 5 ) 3 ] was added thereto, and the hydrogen gas pressure was increased to 100 kg / cm 2 , The mixture was stirred with heating at a reaction temperature of 165 ° C for 3 hours. After cooling the obtained reaction solution, the hydrogen gas was released to obtain a hydrogenated polymer solution. Hydrogen thus obtained The added polymer was poured into a large amount of methanol to solidify the polymer. The hydrogenation rate of the hydrogenated polymer thus obtained was substantially 100%. 100 parts of the obtained hydrogen-added polymer, 100 parts of N-methyl-1-pyrrolidone, 500 parts of propylene glycol, and 84.5 parts of potassium hydroxide (concentration: 85%) were placed in a reactor. The mixture was heated and stirred at 90 ° C for 1.5 hours. The obtained reaction solution was poured into a large amount of a mixed solution of water, tetrahydrofuran and hydrochloric acid to coagulate the hydrolyzate. The coagulated polymer was washed with water and dried to obtain a polymer e as a hydrolyzed polymer. The hydrolysis rate of the obtained hydrolyzed polymer was 75%.
[合成例 6] [Synthesis example 6]
重合保持温度を 1 10°Cから 100¾に変えたこと以外は、 合成例 5と同様に して、 水素化率 100%、 加水分解率 75%の酸性基を有する脂環式ォレフイン 樹脂 (ポリマー f ) を得た。 An alicyclic olefin resin having an acid group having a hydrogenation rate of 100% and a hydrolysis rate of 75% (Polymer f) was prepared in the same manner as in Synthesis Example 5 except that the polymerization holding temperature was changed from 110 ° C to 100 ° C. ).
[合成例 7] [Synthesis example 7]
重合保持温度を 1 10¾から 90でに変えたこと以外は、 合成例 5と同様にし て、 水素化率 1 00%、 加水分解率 75%の酸性基を有する脂環式ォレフイン樹 脂 (ポリマー g) を得た。 An alicyclic olefin resin having an acid group having a hydrogenation rate of 100% and a hydrolysis rate of 75% (polymer g) was prepared in the same manner as in Synthesis Example 5 except that the polymerization holding temperature was changed from 110¾ to 90. ).
[比較合成例 1] [Comparative Synthesis Example 1]
特開平 1 1— 52574号公報の合成例 5に開示されている方法に準じて、 8 —メチルー 8—メトキシカルボ二ルテトラシクロ [4. 4. 0. I 2' 5. 17' 1 °] ドデ力— 3—ェンを開環重合し、 重量平均分子量が 1 7, 000の開環重合 体を得た。 次いで、 得られた開環重合体を水素添加した後、 加水分解反応を 1. 5時間実施して、 水素化率 100%、 加水分解率 75%の酸性基を有する脂環式 ォレフィン樹脂 (ポリマー h) を得た。 According to the method disclosed in Synthesis Example 5 of JP-A-1 1-52574, JP-8 - methyl-8-methoxy-carbonylation Rutetorashikuro [4. 4. 0. I 2 '. 5 1 7' 1 °] de Ring-opening polymerization of dextran-3-ene was performed to obtain a ring-opened polymer having a weight average molecular weight of 17,000. Then, after hydrogenation of the obtained ring-opened polymer, a hydrolysis reaction was carried out for 1.5 hours to obtain an alicyclic olefin resin having an acidic group having a hydrogenation rate of 100% and a hydrolysis rate of 75% (polymer h) was obtained.
[比較合成例 2] [Comparative Synthesis Example 2]
8—ヒドロキシカルボ二ルテトラシクロ [4. 4. 0. I 2' 5. I 7' 10] ドデ 力一 3—ェンを 90部、 テトラシクロ [4. 4. 0. I 2' 5. I 7' 10] ドデ力一 3—ェンを 10部、 1—へキセンを 9部にそれぞれ変えたこと以外は、 合成例 1
と同様にして、 水素化率 100%、 加水分解率 75%の酸性基を有する脂環式ォ レフイン樹脂 (ポリマー i) を得た。 8-hydroxy-carbonylation Rutetorashikuro [4. 4. 0. I 2 '5 . I 7' 10] dodecane force 90 parts of an 3-E down, tetracyclo [4. 4. 0. I 2 '5 . I 7 '10] dodecane force one 3-E down the 10 parts, except for changing each 9 parts hexene, synthesis example 1 In the same manner as in the above, an alicyclic olefin resin (polymer i) having an acidic group and having a hydrogenation rate of 100% and a hydrolysis rate of 75% was obtained.
以上の合成例で得られたポリマー a〜 iの物性を表 1に示す。 Table 1 shows the physical properties of the polymers a to i obtained in the above synthesis examples.
表 1中、 共重合比率の欄の記号の意味は、 以下の通りである。 In Table 1, the meanings of the symbols in the column of the copolymerization ratio are as follows.
TCDC: 8—ヒドロキシカルボ二ルテトラシクロ [4. 4. 0. I2' 5. 17' 1 °] ドデ力一 3—ェン由来の繰り返し単位、 TCDC: 8-hydroxycarbonyltetracyclo [4. 4. 0. I 2 ' 5. 17 ' 1 °] Repeating unit derived from 3-hydroxy
T CD :テトラシクロ [4. 4. 0. I 2' 5. I 7' 10] ドデ力一 3—ェン由来の 繰り返し単位、 T CD: Tetracyclo [4. 4. 0. I 2 ' 5. I 7 ' 10 ] Repeat unit derived from 3-Dene
TCDE : 8—メチルー 8—メ トキシカルボ二ルテトラシクロ [4. 4. 0. 1 2' 5. I7' 10] ドデ力一 3—ェン由来の繰り返し単位。 TCDE: 8-methyl-8-main Tokishikarubo two Rutetorashikuro [4. 4. 0. 1 2 '. 5 I 7' 10] dodecane force one 3-E emissions from repeating units.
[実施例 1 ] [Example 1]
合成例 1で得たポリマー a 100部に対して、 シクロへキサノン 550部、
1, 2—キノンジアジド化合物として 1, 1, 3—トリス (2, 5—ジメチル一 4ーヒ ドロキシフエ二ノレ) 一3—フエ二ノレプロパン (1モ^^) と 1, 2—ナフト キノンジアジド一 5—スルホン酸クロリ ド (1. 9モル) との縮合物 20重量 部、 架橋剤として CYME L 300 25部、 接着助剤として y—グリジドキシ プロピ^^トリメトキシシラン 5部、 界面活性剤としてメガファック F 172 〔大 日本インキ化学工業 (株) 製〕 0.05部を混合し溶解させた後、 孔径 0. 45 /zmのポリテトラフルォロエチレン製フィルタで濾過して感放射線性感光性樹脂 組成物溶液を調製した。 For 100 parts of the polymer a obtained in Synthesis Example 1, 550 parts of cyclohexanone, 1,1,3-Tris (2,5-dimethyl-14-hydroxypheninole) -13-pheninolepropane (1 ^^) and 1,2-naphthoquinonediazide as 1,2-quinonediazide compounds 20 parts by weight of a condensate with sulfonic acid chloride (1.9 mol), 25 parts of CYME L300 as a cross-linking agent, 5 parts of y -glycidoxypropyl ^^ trimethoxysilane as an adhesion promoter, Megafac F as a surfactant 172 [manufactured by Dainippon Ink and Chemicals, Inc.] After mixing and dissolving 0.05 parts, the mixture is filtered through a polytetrafluoroethylene filter having a pore size of 0.45 / zm, and the radiation-sensitive photosensitive resin composition solution is used. Was prepared.
この溶液をシリコン基板上、 ガラス基板上、 及び 1 /zmの段差を有するシリコ ン酸化膜基板 (以下、 「有段差基板」 という) 上に、 それぞれスピンコートした 後、 9 にて 2分間ホットプレート上でプリべ一クして、 膜厚 3. Ομπιの塗 膜を形成した。 得られた塗膜付きのシリコン基板上に所定のパターンを有するマ スクを置き、 波長 365 nm、 光強度 5 mW c m2の紫外線を空気中で 40秒 間照射した。 次いで、 0. 3%のテトラメチルアンモニゥム水溶液を用いて、 2 5 で 60秒間の現像処理を行った。 その後、 超純水でリンス処理を 1分間行 い、 ポジ型のパターンを有する薄膜を形成した。 This solution was spin-coated on a silicon substrate, a glass substrate, and a silicon oxide film substrate with a step of 1 / zm (hereinafter referred to as “stepped substrate”), and then hot-plated at 9 for 2 minutes. By pre-baking above, a coating film having a thickness of 3. 膜厚 μπι was formed. A mask having a predetermined pattern was placed on the obtained silicon substrate with a coating film, and irradiated with ultraviolet light having a wavelength of 365 nm and a light intensity of 5 mW cm 2 in air for 40 seconds. Next, development processing was performed at 25 for 60 seconds using a 0.3% aqueous solution of tetramethylammonium. Thereafter, rinsing treatment was performed for 1 minute with ultrapure water to form a thin film having a positive pattern.
その後、 全面に 365 nmにおける光強度が 5 mWZ cm2である紫外線を 6 0秒間照射した。 このパターンが形成されたシリコン基板、 ガラス基板、 及ぴ 1 μπι段差を有するシリコン酸化膜基板を、 それぞれホットプレート上で 200°C で 30分間加熱することにより、 パターン及ぴ塗膜のポストべークを行い、 パタ ーン状薄膜を形成したシリコン基板、 ガラス基板、 及び有段差基板を得た。 Thereafter, the entire surface was irradiated with ultraviolet light having a light intensity of 5 mWZ cm 2 at 365 nm for 60 seconds. The silicon substrate, glass substrate, and silicon oxide film substrate with a 1 μπι step formed with this pattern were each heated on a hot plate at 200 ° C for 30 minutes to obtain a post-base of the pattern and coating film. Then, a silicon substrate, a glass substrate, and a stepped substrate on which a pattern-like thin film was formed were obtained.
[実施例 2〜7] [Examples 2 to 7]
ポリマー aに代えて、 ポリマー b (実施例 2)、 ポリマー c (実施例 3)、 ポリ マー d (実施例 4)、 ポリマー e (実施例 5)、 ポリマー f (実施例 6)、 ポリマ 一 g (実施例 7) を用いたこと以外は、 実施例 1と同様にして、 パターン状薄膜 を形成したシリコン基板、 ガラス基板、 及び有段差基板を得た。 Polymer b (Example 2), polymer c (Example 3), polymer d (Example 4), polymer e (Example 5), polymer f (Example 6), polymer 1 g instead of polymer a A silicon substrate, a glass substrate, and a stepped substrate on which a patterned thin film was formed were obtained in the same manner as in Example 1 except that (Example 7) was used.
[比較例 1及び 2]
ポリマー aに代えて、 ポリマー h (比較例 1) 及ぴポリマー i (比較例 2) を 用いたこと以外は、 実施例 1と同様にして、 パターン状薄膜を形成したシリコン 基板、 ガラス基板、 及び有段差基板を得た。 [Comparative Examples 1 and 2] In the same manner as in Example 1 except that Polymer h (Comparative Example 1) and Polymer i (Comparative Example 2) were used instead of Polymer a, a silicon substrate on which a patterned thin film was formed, a glass substrate, and A stepped substrate was obtained.
[評価] [Evaluation]
前記で得られた各シリコン基板は、 220°Cのオーブンで 60分間加熱した後 の膜厚が、 いずれも加熱前の膜厚の 95%以上であり、 耐熱寸法安定性に優れる ことが確認された。 Each of the silicon substrates obtained above had a film thickness after heating in an oven at 220 ° C for 60 minutes of 95% or more of the film thickness before heating, and was confirmed to be excellent in heat-resistant dimensional stability. Was.
前記で得られた各ガラス基板は、 日本分光社製紫外可視近赤外分光光度計 (V -570) を用いて 400〜800 nmの波長での最低光線透過率 (t) 力 い ずれも 90 %と良好であり、 透明性に優れることが確認された。 Each of the glass substrates obtained above was analyzed using a UV-visible-near-infrared spectrophotometer (V-570) manufactured by JASCO Corporation, and the minimum light transmittance (t) at a wavelength of 400 to 800 nm was 90%. %, Which was excellent, and it was confirmed that the transparency was excellent.
前記で得られた各有段差基板は、 段差を接触式膜厚測定器で測定したところ、 いずれも 0. 1 /zm未満であり、 高い平坦性のあることが確認された。 When the steps were measured with a contact-type film thickness measuring device, each of the stepped substrates obtained above was less than 0.1 / zm, and it was confirmed that the substrates had high flatness.
これらの評価の他、 各実施例で用いた脂環式ォレフイン樹脂 (ポリマー a〜 i) の誘電率と吸水率、 並びに前記で得られたガラス基板を用いて測定した耐溶 剤性、 解像度、 残膜率、 及ぴパターン形状を、 以下の方法により評価した。 その 結果を表 2に示した。 In addition to these evaluations, the dielectric constant and water absorption of the alicyclic olefin resin (polymers a to i) used in each example, and the solvent resistance, resolution, and residue measured using the glass substrate obtained above. The film ratio and the pattern shape were evaluated by the following methods. Table 2 shows the results.
(1) 比誘電率: (1) Relative permittivity:
J I S C 6481に準じて、 1MHz (室温) での比誘電率 ( ε ) を測定 し、 以下の基準で評価した。 The relative dielectric constant (ε) at 1 MHz (room temperature) was measured according to JIS C 6481 and evaluated according to the following criteria.
A: ε < 2. 60、 A: ε <2.60,
Β: 2. 60≤ ε < 2. 70、 Β: 2.60≤ε <2.70,
C: 2. 70≤ ε < 2. 80、 C: 2.70≤ε <2.80,
D: ε≥ 2. 80。 D: ε≥2.80.
(2) 吸水率: (2) Water absorption:
J I S C6481に準じて吸水率 (w) を測定し、 以下の基準で評価した。 A: w< 0. 05%、 The water absorption (w) was measured according to JIS C6481, and evaluated according to the following criteria. A: w <0.05%,
B: 0. 05%≤w< 0. 07%、
C : 0. 07%≤w< 0. 1 %、 B: 0.05% ≤w <0.07%, C: 0.07% ≤w <0.1%,
D : 0. 1 %≤w。 D: 0.1% ≤w.
(3) 耐溶剤性: (3) Solvent resistance:
パターン状薄膜を形成したガラス基板を 70°Cのジメチルスルホキシド中に 3 0分間浸漬して、 膜厚変化率 (S) を測定し、 以下の基準で評価した。 The glass substrate on which the patterned thin film was formed was immersed in dimethyl sulfoxide at 70 ° C for 30 minutes, and the film thickness change rate (S) was measured and evaluated according to the following criteria.
A: 1 0%〉S、 A: 10%> S,
B : 1 0%≥S、 B: 10% ≥S,
C:膨潤が大きく基板から剥がれてしまレ、、 膜厚変化率が測定できない状態。 C: A state in which the swelling is large and the film is peeled off from the substrate, and the rate of change in film thickness cannot be measured.
(4) 解像度: (4) Resolution:
ガラス基板上に形成されたパターン状薄膜を走査型電子顕微鏡にて観察し、 ラ イン 'アンド .スペースが 1 : 1の線幅で形成されている最小のパターン寸法 (W) を見つけ出し、 以下の基準で評価した。 Observe the patterned thin film formed on the glass substrate with a scanning electron microscope to find the minimum pattern dimension (W) where the line'and space is formed with a line width of 1: 1. Evaluation was based on criteria.
A: W≤ 5 μ m、 A: W ≤ 5 μm,
B : 5 μm<W≤ 10 m、 B: 5 μm <W≤10 m,
C : 10 μ m<W≤ 1 5//m、 C: 10 μm <W≤15 // m,
D: W> 1 5 μπι。 D: W> 15 μπι.
(5) 残膜率: (5) Remaining film ratio:
0. 3w t%のテトラメチルアンモニゥムヒドロキシド水溶液 (25°C) によ る 1分間現像を行い、 現像前後の未露光部分の膜厚を接触式の膜厚測定器を用い て測定した。 現像後の (膜厚 Z現像前膜厚) X I 00を残膜率 (R) とし、 以下 の基準で評価した。 Developed with a 0.3 wt% aqueous solution of tetramethylammonium hydroxide (25 ° C) for 1 minute, and measured the film thickness of the unexposed area before and after development using a contact-type film thickness meter. . The film thickness after development (film thickness before development) X I 00 was defined as the residual film ratio (R), and evaluated according to the following criteria.
A: R≤ 95%, A: R≤ 95%,
B : 93≤R< 95%, B: 93≤R <95%,
C : 90%≤R< 93%、 C: 90% ≤R <93%,
D: 85%≤R< 90%、 D: 85% ≤R <90%,
E: R < 85 %。 E: R <85%.
(6) パターン形状:
パターンユング後のライン .アンド 'スペース断面を走査型電子顕微鏡にて観 察し、 以下の基準で評価した。 (6) Pattern shape: The cross section of the line and space after pattern jung was observed with a scanning electron microscope, and evaluated according to the following criteria.
A:感放射線性樹脂組成物由来の残渣がなく、 形状崩れもない矩形である、 B :樹月旨パターンと基板の界面に僅力なすそ引きがある、 A: a rectangular shape with no residue derived from the radiation-sensitive resin composition and without shape collapse; B: a slight tailing at the interface between the luster pattern and the substrate;
C:スペース部分に現像残渣が存在する。 表 2 C: Development residue exists in the space. Table 2
表 2に示す結果より、 本発明の感放射線性樹脂組成物 (実施例 1〜7) は、 比 誘電率、 耐吸水性、 耐熱寸法安定性、 平坦性、 及び耐溶剤性の特性バランスを維 持したまま、 優れた解像度、 残膜率、 及びパターン形状を達成できることが分か る。 特に、 重量平均分子量が 10000未満、 分子量分布が 2. 0以下、 指数 C 1が 600以上の酸性基を有する脂環式ォレフイン樹脂 (ポリマー a及び b) を 用いた場合 (実施例 1及び 2)、 優れた解像度と残膜率が得られることが分か る。 From the results shown in Table 2, the radiation-sensitive resin compositions of the present invention (Examples 1 to 7) maintain the characteristic balance of relative dielectric constant, water absorption resistance, heat-resistant dimensional stability, flatness, and solvent resistance. It can be seen that excellent resolution, remaining film ratio, and pattern shape can be achieved while maintaining the same. In particular, when an alicyclic resin (polymers a and b) having an acidic group having a weight average molecular weight of less than 10,000, a molecular weight distribution of 2.0 or less, and an index C1 of 600 or more is used (Examples 1 and 2). It can be seen that excellent resolution and residual film ratio can be obtained.
また、 8—ヒ ドロキシカルボ二ルテトラシクロ [4. 4. 0. I2' 5. 17' 1 °] —ドデカー 3—ェン由来の繰り返し単位とテトラシクロ [4. 4. 0. I 2' 5. I 7· 10] —ドデ力一3—ェン由来の繰り返し単位とを有する脂環式ォレフィ ン樹脂 (ポリマー a〜d) を用いた場合 (実施例 1〜4)、 優れた耐吸水性の得 られることが分かる。
一方、 特開平 11— 52574号公報ゃ特開平 10— 307388号公報に記 載されているような指数 C iが低いアル力リ可溶性の脂環式ォレフイン樹脂を用 いた場合には (比較例 1及び 2)、 比誘電率、 吸水性、 耐溶剤性にやや劣り、 解 像度、 残膜率及びパターン形状に劣ることが分かる。 産業上の利用可能性 Also, 8-arsenide Dorokishikarubo two Rutetorashikuro [4. 4. 0. I 2 '5 1 7.' 1 °] - Dodeka 3 E emissions from repeating units and tetracyclo of [4. 4. 0. I 2 '5 . I 7 · 10 ]-When using alicyclic olefin resins (polymers a to d) having a repeating unit derived from 3-dene (Examples 1 to 4), excellent water absorption resistance It can be seen that On the other hand, when an alicyclic olefin resin having a low index Ci as described in JP-A-11-52574 and JP-A-10-307388 was used (Comparative Example 1). And 2), the relative permittivity, water absorption and solvent resistance are slightly inferior, and the resolution, residual film ratio and pattern shape are inferior. Industrial applicability
本発明によれば、 電気絶縁膜の形成に好適な性質を有している上、 解像度、 残 膜率及びパターン形状にも優れた感放射線性樹脂組成物を得ることができる。 本 発明の感放射線性樹脂組成物を用いて形成された樹脂膜、 及びパターンを形成し た樹脂膜は、 例えば、 半導体素子、 発光ダイオード、 各種メモリー類などの電子 素子;ハイブリッド I C、 MCM、 プリント配線基板などのオーバーコート材; 多層回路基板の層間絶縁膜;液晶ディスプレイの絶縁層など、 各種の電子部品用 樹脂膜として好適に用いることができる。
According to the present invention, it is possible to obtain a radiation-sensitive resin composition having properties suitable for forming an electrical insulating film, and also having excellent resolution, residual film ratio, and pattern shape. The resin film formed using the radiation-sensitive resin composition of the present invention and the resin film formed with a pattern include, for example, electronic elements such as semiconductor elements, light emitting diodes, and various memories; hybrid ICs, MCMs, and prints. It can be suitably used as a resin film for various electronic components such as an overcoat material for a wiring board; an interlayer insulating film of a multilayer circuit board; an insulating layer of a liquid crystal display.
Claims
1. (A) 酸性基を有する脂環式ォレフイン樹脂、 (B) 酸発生剤、 (C) 架 橋剤、 及び (D) 溶剤を含有する感放射線性樹脂組成物において、 (A) 酸性基 を有する脂環式ォレフイン系樹脂が、 その重量平均分子量が 10000未満であ る場合には、 下記式 (1) 1. In a radiation-sensitive resin composition containing (A) an alicyclic resin having an acidic group, (B) an acid generator, (C) a crosslinking agent, and (D) a solvent, (A) an acidic group When the weight-average molecular weight of the alicyclic olefin resin having is less than 10,000, the following formula (1)
(MW)05X (AC)7 (MW) 05 X (AC) 7
C 1 = X 105 (1) C 1 = X 10 5 (1)
(AG)6X (MWD)2 (AG) 6 X (MWD) 2
(式中、 MWは、 重量平均分子量であり、 ACは、 構造単位当たりの平均炭素数 であり、 AGは、 全構造単位中の酸性基のモル数であり、 MWDは、 分子量分布 である。 ) (Where MW is the weight average molecular weight, AC is the average number of carbon atoms per structural unit, AG is the number of moles of acidic groups in all structural units, and MWD is the molecular weight distribution. )
で表わされる指数 C 1が 300以上を示し、 重量平均分子量が 10000以上で ある場合には、 下記式 (2) If the index C 1 is 300 or more and the weight average molecular weight is 10,000 or more, the following formula (2)
(MW)a5X(AC)2 (MW) a5 X (AC) 2
C 2= X 103 (2) C 2 = X 10 3 (2)
(AG)2X (MWD)3 (AG) 2 X (MWD) 3
(式中の各符号の意味は、 式 (1)におけるのと同じである。 ) (The meaning of each symbol in the formula is the same as in formula (1).)
で表わされる指数 C 2が 120以上を示すものであることを特徴とする感放射線 性樹脂組成物。 A radiation-sensitive resin composition, wherein an index C 2 represented by the formula: is 120 or more.
2. (A) 酸性基を有する脂環式ォレフイン樹脂の重量平均分子量が 500〜 20000の範囲内である請求項 1記載の感放射線性樹脂組成物。 2. The radiation-sensitive resin composition according to claim 1, wherein the weight-average molecular weight of the (A) alicyclic resin having an acidic group is in the range of 500 to 20,000.
3. 酸性基が、 フエノール性水酸基、 カルボキシル基、 ジカルボン酸無水物残 基、 スルホン酸残基、 またはリン酸残基である請求項 1記載の感放射線性樹脂組
成物。 3. The radiation-sensitive resin group according to claim 1, wherein the acidic group is a phenolic hydroxyl group, a carboxyl group, a dicarboxylic anhydride residue, a sulfonic acid residue, or a phosphoric acid residue. Adult.
4. 酸性基が、 カルボキシル基である請求項 3記載の感放射線性樹脂組成物。 4. The radiation-sensitive resin composition according to claim 3, wherein the acidic group is a carboxyl group.
5. 脂環式ォレフイン樹脂が、 5. When the alicyclic resin is
ω脂環式ォレフイン単量体の開環 (共) 重合体及びその水素添加物、 Ring-opening (co) polymer of ω alicyclic olefin monomer and hydrogenated product thereof,
( 脂環式ォレフイン単量体の付加 (共) 重合体、 (Addition (co) polymer of alicyclic olefin monomer,
(ϋυ脂環式ォレフイン単量体とビニル化合物との付加共重合体、 (ϋυ an addition copolymer of an alicyclic olefin monomer and a vinyl compound,
(iv)単環シクロアルケン (共) 重合体、 (iv) a monocyclic cycloalkene (co) polymer,
(V)脂環式共役ジェン (共) 重合体、 (V) an alicyclic conjugated diene (co) polymer,
(vi)ビュル系脂環式炭化水素 (共) 重合体及びその水素添加物、 並びに (vi) Bull-based alicyclic hydrocarbon (co) polymer and hydrogenated product thereof, and
(vii)芳香族ォレフイン (共) 重合体の芳香環水素添加物 (vii) Aromatic ring hydrogenated product of aromatic olefin (co) polymer
からなる群より選ばれる少なくとも 1種の樹脂である請求項 1記載の感放射線性 樹脂組成物。 2. The radiation-sensitive resin composition according to claim 1, which is at least one resin selected from the group consisting of:
6 . 脂環式ォレフイン樹脂が、 脂環式ォレフイン単量体の開環 (共) 重合体の 水素添加物である請求項 5記載の感放射線性樹脂組成物。 6. The radiation-sensitive resin composition according to claim 5, wherein the alicyclic olefin resin is a hydrogenated product of a ring-opening (co) polymer of an alicyclic olefin monomer.
7 . 脂環式ォレフイン樹脂が、 ノルボルネン系単量体の開環 (共) 重合体の水 素添加物である請求項 6記載の感放射線性樹脂組成物。 7. The radiation-sensitive resin composition according to claim 6, wherein the alicyclic resin is a hydrogen additive of a ring-opening (co) polymer of a norbornene-based monomer.
8 . ノルボルネン系単量体が、 テトラシクロドデセン類である請求項 7記載の 感放射線性樹脂組成物。 8. The radiation-sensitive resin composition according to claim 7, wherein the norbornene-based monomer is a tetracyclododecene.
9 . (A) 酸性基を有する脂環式ォレフイン樹脂が、 脂環式ォレフイン樹脂を 酸性基含有化合物で変性した樹脂である請求項 1記載の感放射線性樹脂組成物。
9. The radiation-sensitive resin composition according to claim 1, wherein the (A) alicyclic olefin resin having an acidic group is a resin obtained by modifying an alicyclic olefin resin with a compound having an acidic group.
10. (A) 酸性基を有する脂環式ォレフイン樹脂が、 酸性基を有する脂環式 ォレフィン単量体と酸性基を有しない脂環式ォレフィン単量体との付加共重合 体、 開環共重合体、 またはそれらの水素添加物である請求項 1記載の感放射線性 樹脂組成物。 10. (A) An alicyclic olefin resin having an acidic group is an addition copolymer or ring-opening copolymer of an alicyclic olefin monomer having an acidic group and an alicyclic olefin monomer having no acidic group. 2. The radiation-sensitive resin composition according to claim 1, which is a polymer or a hydrogenated product thereof.
1 1. (A) 酸性基を有する脂環式ォレフイン樹脂が、 エステル基を含有する 脂環式ォレフイン単量体と、 必要に応じてエステル基を有しない単量体との付加1 1. (A) Addition of an alicyclic olefin resin having an ester group to an alicyclic olefin monomer having an ester group and, if necessary, a monomer having no ester group.
(共) 重合体、 開環 (共) 重合体、 またはそれらの水素添加物を加水分解してな るものである請求項 1記載の感放射線性樹脂組成物。 2. The radiation-sensitive resin composition according to claim 1, which is obtained by hydrolyzing a (co) polymer, a ring-opening (co) polymer, or a hydrogenated product thereof.
12. (A) 酸性基を有する脂環式ォレフイン樹脂の分子量分布が 3. 3以下 である請求項 1記載の感放射線性樹脂組成物。 12. The radiation-sensitive resin composition according to claim 1, wherein the molecular weight distribution of the (A) alicyclic resin having an acidic group is 3.3 or less.
13. (A) 酸性基を有する脂環式ォレフイン樹脂中の酸性基を有する構造単 位の割合が 20〜 80モル%である請求項 1記載の感放射線性樹脂組成物。 13. The radiation-sensitive resin composition according to claim 1, wherein the proportion of the structural unit having an acidic group in the (A) alicyclic resin having an acidic group is 20 to 80 mol%.
14. (A) 酸性基を有する脂環式ォレフイン樹脂が、 重量平均分子量が 10 000未満、 分子量分布が 2. 0以下、 指数 C 1が 600以上である請求項 1記 載の感放射線性樹脂組成物。 14. The radiation-sensitive resin according to claim 1, wherein the (A) alicyclic resin having an acidic group has a weight average molecular weight of less than 10,000, a molecular weight distribution of 2.0 or less, and an index C1 of 600 or more. Composition.
15. (B) 酸発生剤が、 キノンジアジドスルホン酸エステルである請求項 1 記載の感放射線性樹脂組成物。 15. The radiation-sensitive resin composition according to claim 1, wherein the acid generator (B) is a quinonediazidesulfonic acid ester.
16. (C) 架橋剤が、 少なくとも 2つの反応性基を有する化合物である請求 項 1記載の感放射線性樹脂組成物。 16. The radiation-sensitive resin composition according to claim 1, wherein (C) the crosslinking agent is a compound having at least two reactive groups.
1 7. 請求項 1〜 16のいずれか 1項に記載の感放射線性樹脂組成物を用い
て、 基板上に樹脂膜を形成し、 該樹脂膜の上からパターン状に活性放射線を照射 して、 樹脂膜に潜像パターンを形成し、 次いで、 樹脂膜と現像液とを接触させる ことによりパターンを顕在化させるパターン形成方法。 1 7. Using the radiation-sensitive resin composition according to any one of claims 1 to 16 Forming a resin film on the substrate, irradiating the resin film with actinic radiation from above the resin film to form a latent image pattern on the resin film, and then contacting the resin film with the developer. A pattern forming method that makes a pattern visible.
1 8 . 現像液が濃度 0. 0 1重量%〜1 . 0重量0 /0のテトラメチルアンモニゥ ムヒドロキシド水溶液である請求項 1 7記載のパターン形成方法。 1 8. Developer concentration 0.0 1% to 1. 0 wt 0/0 The pattern formation method of claim 1 7 wherein the tetramethylammonium Niu Muhidorokishido aqueous.
1 9. 請求項 1 7記載の方法によりパターンが形成された樹脂膜。 1 9. A resin film having a pattern formed by the method according to claim 17.
2 0 . 請求項 1 9記載のパターンが形成された樹脂膜の電子部品用樹脂膜とし ての利用。
20. Use of the resin film formed with the pattern according to claim 19 as a resin film for an electronic component.
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KR1020047010199A KR100907820B1 (en) | 2001-12-27 | 2002-12-25 | Radiation-sensitive resin composition and pattern formation method |
JP2003556854A JP4179164B2 (en) | 2001-12-27 | 2002-12-25 | Radiation sensitive resin composition and pattern forming method |
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JP2001-397645 | 2001-12-27 | ||
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KR (1) | KR100907820B1 (en) |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006307155A (en) * | 2005-03-30 | 2006-11-09 | Nippon Zeon Co Ltd | Radiation-sensitive resin composition and method for preparing the same, laminate and method for producing the same, active matrix substrate, and flat display device including the same |
JP2006307154A (en) * | 2005-03-31 | 2006-11-09 | Nippon Zeon Co Ltd | Resin film made of alicyclic olefin polymer |
CN100475906C (en) * | 2003-08-04 | 2009-04-08 | 日本瑞翁株式会社 | Polymerizable composition and molded article formed from the composition |
JP2009301056A (en) * | 2009-09-17 | 2009-12-24 | Sumitomo Bakelite Co Ltd | Resin composition for semiconductor surface protective film and semiconductor device using the same |
KR101173709B1 (en) * | 2004-03-31 | 2012-08-13 | 니폰 제온 가부시키가이샤 | Radiation-sensitive composition, laminate, process for producing the same and electronic part |
KR101501332B1 (en) * | 2010-03-08 | 2015-03-10 | 보레알리스 아게 | Polyolefin Composition for Medium/High/Extra High Voltage Cables Comprising Benzil-Type Voltage Stabiliser |
JP2015094910A (en) * | 2013-11-14 | 2015-05-18 | 日本ゼオン株式会社 | Radiation-sensitive resin composition and laminate |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI427096B (en) * | 2006-01-30 | 2014-02-21 | Zeon Corp | A laminated body, an active matrix substrate, and a planar display device having the substrate |
TWI408496B (en) * | 2006-03-01 | 2013-09-11 | Zeon Corp | A radiation linear resin composition, a laminate, and a method for producing the same |
JP6035902B2 (en) * | 2011-08-09 | 2016-11-30 | Jsr株式会社 | Microlens array and stereoscopic image display device |
KR200485770Y1 (en) | 2016-08-08 | 2018-02-20 | 권연호 | Desk frame |
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EP0632327A1 (en) * | 1993-06-02 | 1995-01-04 | Sumitomo Chemical Company, Limited | Photoresist composition |
JPH10307388A (en) * | 1997-05-06 | 1998-11-17 | Jsr Corp | Radiation-sensitive resin composition |
-
2002
- 2002-12-25 WO PCT/JP2002/013520 patent/WO2003056391A1/en active Application Filing
- 2002-12-25 JP JP2003556854A patent/JP4179164B2/en not_active Expired - Fee Related
- 2002-12-25 KR KR1020047010199A patent/KR100907820B1/en not_active Expired - Fee Related
- 2002-12-27 TW TW91137587A patent/TWI307823B/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0632327A1 (en) * | 1993-06-02 | 1995-01-04 | Sumitomo Chemical Company, Limited | Photoresist composition |
JPH10307388A (en) * | 1997-05-06 | 1998-11-17 | Jsr Corp | Radiation-sensitive resin composition |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100475906C (en) * | 2003-08-04 | 2009-04-08 | 日本瑞翁株式会社 | Polymerizable composition and molded article formed from the composition |
KR101173709B1 (en) * | 2004-03-31 | 2012-08-13 | 니폰 제온 가부시키가이샤 | Radiation-sensitive composition, laminate, process for producing the same and electronic part |
JP2006307155A (en) * | 2005-03-30 | 2006-11-09 | Nippon Zeon Co Ltd | Radiation-sensitive resin composition and method for preparing the same, laminate and method for producing the same, active matrix substrate, and flat display device including the same |
JP2006307154A (en) * | 2005-03-31 | 2006-11-09 | Nippon Zeon Co Ltd | Resin film made of alicyclic olefin polymer |
JP2009301056A (en) * | 2009-09-17 | 2009-12-24 | Sumitomo Bakelite Co Ltd | Resin composition for semiconductor surface protective film and semiconductor device using the same |
KR101501332B1 (en) * | 2010-03-08 | 2015-03-10 | 보레알리스 아게 | Polyolefin Composition for Medium/High/Extra High Voltage Cables Comprising Benzil-Type Voltage Stabiliser |
JP2015094910A (en) * | 2013-11-14 | 2015-05-18 | 日本ゼオン株式会社 | Radiation-sensitive resin composition and laminate |
Also Published As
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KR100907820B1 (en) | 2009-07-14 |
TW200302399A (en) | 2003-08-01 |
KR20040077694A (en) | 2004-09-06 |
JPWO2003056391A1 (en) | 2005-05-12 |
TWI307823B (en) | 2009-03-21 |
JP4179164B2 (en) | 2008-11-12 |
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