WO2003020839A1 - Polishing composition - Google Patents
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- WO2003020839A1 WO2003020839A1 PCT/JP2002/008925 JP0208925W WO03020839A1 WO 2003020839 A1 WO2003020839 A1 WO 2003020839A1 JP 0208925 W JP0208925 W JP 0208925W WO 03020839 A1 WO03020839 A1 WO 03020839A1
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- WIPO (PCT)
- Prior art keywords
- polishing
- acid
- polishing composition
- composition according
- inorganic acid
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 116
- 239000000203 mixture Substances 0.000 title claims abstract description 66
- 150000003839 salts Chemical class 0.000 claims abstract description 47
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000002253 acid Substances 0.000 claims abstract description 30
- 239000006061 abrasive grain Substances 0.000 claims abstract description 28
- 125000003703 phosphorus containing inorganic group Chemical group 0.000 claims abstract description 18
- 239000012736 aqueous medium Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 31
- 239000007800 oxidant agent Substances 0.000 claims description 27
- 239000002245 particle Substances 0.000 claims description 23
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 18
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 14
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 6
- 150000002978 peroxides Chemical class 0.000 claims description 6
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 5
- 239000004327 boric acid Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 4
- 229960001922 sodium perborate Drugs 0.000 claims description 4
- YKLJGMBLPUQQOI-UHFFFAOYSA-M sodium;oxidooxy(oxo)borane Chemical group [Na+].[O-]OB=O YKLJGMBLPUQQOI-UHFFFAOYSA-M 0.000 claims description 4
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 claims description 4
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 3
- 150000002823 nitrates Chemical class 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 229910001868 water Inorganic materials 0.000 description 10
- 229910002651 NO3 Inorganic materials 0.000 description 9
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 6
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 5
- 239000008119 colloidal silica Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 150000007524 organic acids Chemical class 0.000 description 5
- -1 phosphonic acid compound Chemical class 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 229910021485 fumed silica Inorganic materials 0.000 description 3
- 239000003349 gelling agent Substances 0.000 description 3
- 235000005985 organic acids Nutrition 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PPQJCISYYXZCAE-UHFFFAOYSA-N 1,10-phenanthroline;hydrate Chemical compound O.C1=CN=C2C3=NC=CC=C3C=CC2=C1 PPQJCISYYXZCAE-UHFFFAOYSA-N 0.000 description 1
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- JLDSOYXADOWAKB-UHFFFAOYSA-N aluminium nitrate Chemical compound [Al+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O JLDSOYXADOWAKB-UHFFFAOYSA-N 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Definitions
- the present invention relates to a polishing composition suited to the polishing of a magnetic disk substrate used in a storage device for a computer or the like, and more particularly to a composition for polishing a magnetic disk substrate that can provide a magnetic disk surface polished with high precision suitable for when a magnetic head flies over the disk surface while floating at a low level.
- the magnetic disk (memory hard disk) is widely used as a means of performing high-speed access.
- This magnetic disk is a disk obtained by subjecting the surface of an Al- alloy substrate to electroless plating with NiP to form a substrate, polishing the surface of the substrate, and successively sputtering a Cr-alloy undercoat layer, a Co-alloy magnetic layer and a carbon protective layer on the substrate in that order.
- the magnetic head which flies at high speed while floating at a stipulated height above the disk surface may collide with the protrusion, thereby causing damage.
- the protrusion also appears on the Cr-alloy undercoat layer and the Co-alloy magnetic layer when such layers are overlaid, and a flaw caused by the scratch is produced, whereby the magnetic disk surface does not have a high-precision smooth surface.
- polishing compositions are proposed that can remove the protrusions completely or buff the protrusion down to a height as low as possible, without easily producing any scratches.
- JP-A ⁇ EI 9 * 204657 discloses the use of a composition prepared by adding aluminum nitrate and an anti- elling agent to colloidal silica.
- JP-A ⁇ EI 9-204658 discloses the use of a composition prepared by adding aluminum nitrate to fumed silica.
- Each of the compositions disclosed in these publications comprises finely divided particles of silicon oxide with low hardness serving as the abrasive grains, so that good surface precision can be easily obtained although it is difficult to achieve a polishing speed suitable for actual production.
- JP-A-HEI 10-204416 the use of many kinds of oxidizing agents and the use of Fe salts are independently proposed to accelerate the polishing speed.
- the polishing speed thus obtained is still insufficient in light of actual production in practice.
- a composition for polishing an aluminum magnetic disk substrate that permits high-density magnetic storage is required to provide a disk surface with high precision that enables a head to fly at a low level.
- an object of the present invention is to provide a composition for polishing a magnetic disk substrate capable of realizing high-density magnetic storage, where such composition can give the magnetic disk substrate a low surface roughness with no protrusions or scratches caused by polishing and can polish the magnetic disk substrate at a cost-effective speed.
- the polishing composition according to the present invention comprises: abrasive grains, a phosphorus-containing inorganic acid or salt thereof and another inorganic acid or salt thereof contained in an aqueous medium.
- the abrasive grains are at least one selected from the group consisting of alumina, titania, silica and zirconia.
- the mean particle size of the abrasive grains is from 0.001 to 0.5 ⁇ m and the abrasive grains are colloidal particles.
- the phosphorus-containing inorganic acid is phosphoric acid or phosphonic acid
- the other inorganic acid is at least one acid selected from the group consisting of nitric acid, sulfuric acid, amidosulfuric acid and boric acid.
- the oxidizing agent is at least one compound selected from the group consisting of the peroxides, perborates, persulfates or nitrates, the peroxide is hydrogen peroxide and the perborate is sodium perborate.
- the pH of the polishing composition is 1 to 5.
- the abrasive grain content is in the range from 3 to 30% by mass
- the content of the inorganic acid or salt thereof is in the range from 0.1 to 8% by mass
- the oxidizing agent content is in the range from 0.2 to 5% by mass.
- the polishing composition according to the present invention is a composition for polishing magnetic disk substrates.
- the present invention also comprises a magnetic disk substrate polished by the aforementioned composition for polishing magnetic disk substrates.
- the polishing composition according to the present invention comprises two or more specific organic acids or salts thereof, and thus the state of dispersion becomes good, and by taking a phosphorus-containing organic acid or salt thereof as a mandatory constituent, the effects of increasing the polishing rate and suppressing the occurrence of micro -scratches are boosted, so a magnetic disk substrate that has a high-precision disk surface is obtained.
- the inventors of the present invention have diligently investigated an abrasive that can provide a polished surface with high precision required for an aluminum magnetic disk for use with a low-flying magnetic head. As a result, the inventors have found a polishing composition that exhibits excellent properties in polishing an aluminum magnetic disk, leading to the present invention.
- the polishing composition of the present invention is characterized in that abrasive grains, a phosphorus-containing inorganic acid or salt thereof and another inorganic acid or salt thereof are contained in an aqueous medium.
- the abrasive grains contained as an abrasive for use in the polishing composition of the present invention are not particularly limited.
- alumina, titania, silica, zirconia and the like can be employed, and the crystalline form thereof is not limited.
- alumina i.e., aluminum oxide
- titania i.e., titanium oxide
- silica i.e., silicon oxide
- ' silica includes the colloidal silica, fumed silica, white carbon and other forms,' and zirconia (i.e., zirconium oxide) has the monoclinic, tetragonal and amorphous forms. Any of these can preferably be used.
- the abrasive grains in the form of colloidal particles preferably boost suppressing the occurrence of micro-scratches.
- the aforementioned abrasive grains have a mean particle size normally in the range of 0.001 to 0.5 ⁇ m, preferably in the range of 0.001 to 0.2 ⁇ m, more preferably in the range of 0.02 to 0.2 ⁇ m, and most preferably in the range of 0.03 to 0.2 ⁇ m.
- abrasive grains in the form of colloidal particles are even more preferable.
- the mean particle size is used is a value measured by a Microtrac UPA150 (made by Honeywell, Inc.) laser Doppler frequency analysis-type particle size distribution analyzer.
- the polishing speed is significantly decreased.
- the concentration of the abrasive grains in the polishing composition is preferably in the range of 3 to 30% and more preferably 5 to 15%.
- both a phosphorus-containing inorganic acid or salt thereof and another inorganic acid or salt thereof are used.
- the phosphorus-containing inorganic acid must contain phosphorus as a constituent element of the compound, and is preferably phosphoric acid or phosphonic acid.
- the phosphorus-containing inorganic acid also comprises derivatives thereof. Two or more phosphorus- containing inorganic acids may also be used together.
- the other inorganic acid used mixed with the phosphorus- containing inorganic acid may be hydrochloric acid, sulfuric acid, chromic acid, carbonic acid, amidosulfuric acid, boric acid or other acid, but nitric acid, sulfuric acid, amidosulfuric acid or boric acid is preferable. These acids also comprise derivatives thereof.
- the salts of the phosphorus-containing inorganic acid or salt thereof and the another inorganic acid or salt thereof used may be salts of Li, Be, Na, Mg, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, Zr, Nb, Mo, Pd, Ag, Hf, Ta, W or other metals. These salts may be obtained by dissociating an oxide or carbonate of the aforementioned metals, for example, in a phosphorus-containing inorganic acid or another inorganic acid.
- the total content of the phosphorus-containing inorganic acid or salt thereof and another inorganic acid or salt thereof may be in the range from 0.1 to 8%, preferably 0.2 to 6% and more preferably 0.4 to 4%.
- content of inorganic acid or salt thereof is less than 0.1%, no effect of suppressing micro-scratches or increasing the polishing speed is seen. In excess of 8%, the drop in pH is significant, thus leading to great damage to the polishing material so this causes problems in handling.
- the proportion of mixing the phosphorus-containing inorganic acid or salt thereof and another inorganic acid or salt thereof is preferably: to 1 mole of the former is added a range of 0.1 to 5 moles of the latter.
- the polishing composition according to the present invention comprises two or more specific organic acids or salts thereof, but by taking a phosphorus-containing organic acid or salt thereof as a mandatory constituent, the effects of increasing the polishing rate and suppressing the occurrence of micro -scratches are boosted.
- the mechanism behind the effect of using two or more specific organic acids or salts thereof is not certain, but one is presumed to be because the state of dispersion as a polishing composition becomes better.
- the oxidizing agent contained in the polishing composition of the present invention is preferably at least one compound selected from the group consisting of the peroxides, perborates, persulfates or nitrates, where representative examples include: hydrogen peroxide as a peroxide, sodium perborate as a perborate, ammonium persulfate as a persulfate and ammonium nitrate as a nitrate.
- the aforementioned other inorganic acid or salt thereof has an oxidizing action, then it can also serve as the oxidizing agent, so it is possible to use that inorganic acid or salt thereof alone.
- a nitrate may be used both as the salt of the other acid and as the oxidizing agent. Note that even in the case that the other inorganic acid or salt thereof has an oxidizing action, a different oxidizing agent may also be added.
- Examples of the effects of the oxidizing agent include increasing the polishing rate and reducing the surface roughness. While the mechanisms of these effects are not clear, they are thought to be the effect as an etching agent on the NiP surface.
- the content of the oxidizing agent i.e., hydrogen peroxide
- the content of the oxidizing agent should be 0.2 to 5% or preferably 0.5 to 2%. If the oxidizing agent content is less than 0.2% then the effect of increasing the polishing rate and reducing the surface roughness is minuscule, but if 5% is exceeded then its effect reaches saturation.
- the content of the other inorganic acid or salt thereof in the event that it is also used as the oxidizing agent becomes the content of both, namely the content as the other inorganic acid or salt thereof and the content as the oxidizing agent. Accordingly, the sum of the content of the phosphorus-containing inorganic acid or salt thereof and the other inorganic acid or salt thereof is preferably 0.3 to 13% or more preferably 0.7 to 8%.
- the aforementioned composition contains inorganic acids or salts thereof not also used as oxidizing agents
- the content of the nitrate may be determined as all being the other inorganic acid, while the hydrogen peroxide may be taken as the oxidizing agent and its upper limit can be set to 5%.
- the nitrate is included as an oxidizing agent with 5% as the limit, and the amount of the remaining non-oxidizing inorganic acid or salt thereof can be determined.
- the sum of the content of the phosphorus-containing inorganic acid or salt thereof, the other inorganic acid or salt thereof and the oxidizing agent is preferably 0.3 to 13% and more preferably 0.7 to 8%.
- the pH range is preferably 1 to 5, more preferably 2 to 4 and even more preferably 2 to 3.
- Making the liquid acidic can accelerate the oxidation of Ni and increase the polishing rate, but if the pH is too low, corrosion of equipment and other problems occur, so the pH is most preferably 2 to 3. Adjustment of the pH can be performed using sodium perborate.
- the concentrations of the various aforementioned components are the concentrations at the time of polishing the magnetic disk substrate.
- the magnetic disk substrate polishing composition according to the present invention may further comprise surfactants and preservatives in addition to the aforementioned components.
- surfactants and preservatives in addition to the aforementioned components.
- An anti-gelling agent may be added to the polishing composition in order to suppress gelling.
- the anti-gelling agent that may be used, at least one compound selected from the group consisting of a phosphonic acid compound, phenanthroline and aluminum acetylacetonate is preferably employed.
- the phosphonic acid compound include phosphoric acid, l-hydroxyethane-l,l-diphosphonic acid (C2H6O7P2) and aminotrimethylenephosphonic acid 1,10-phenanthroline monohydrate (C12H8N2 ⁇ 2O) and an aluminum complex salt of acetylacetone (Al2[CH(COCH3)3-) are respectively given as examples of the phenanthroline compound and the aluminum acetylacetonate. It is preferable that the anti- gelling agent be added to the polishing composition in an amount of 2% or less.
- the polishing composition of the present invention can be prepared by suspending the abrasive grains in water and adding the phosphorus- containing inorganic acid or salt thereof, nitrate-containing inorganic acid or salt thereof and hydrogen peroxide to the suspension in a manner similar to that used in the preparation of conventional polishing compositions. All the components may be mixed and diluted for use. Alternatively, there is a method of preliminarily dividing the components into two groups, for example, one including water, abrasive grains and nitric acid, and the other including water, phosphoric acid and hydrogen peroxide, and thereafter mixing the two groups together.
- the polishing composition of the present invention is advantageously applicable to a substrate of a magnetic disk with a high storage density (generally, with a storage density of 3 Gbits/inch 2 or more), as represented by a magnetic disk for a magnetic head utilizing a magnetoresistance (MR) effect.
- a magnetic disk with a lower storage density is also effective from the standpoint of improving reliability.
- the magnetic hard disk substrates to which the polishing composition of the present invention is applicable are not particularly limited, but when the polishing composition of the present invention is applied to an aluminum substrate (including an aluminum alloy substrate), and particularly an aluminum substrate that is plated with NiP for example by electroless plating, a high-quality polished surface can be advantageously obtained from an industrial standpoint.
- the polishing method typically comprises the steps of causing a polishing pad commonly used for a slurry-like abrasive to press against the magnetic disk substrate, and rotating the pad or the substrate while supplying the slurry to a gap between the pad and the substrate.
- Magnetic disks made from substrates polished using the polishing composition of the present invention exhibit an extremely low frequency of occurrence of fine defects such as micro-pits and micro -scratches, and the surface of the magnetic disk has excellent surface smoothness, indicated by a surface roughness (Ra) of roughly 2 to 3 ⁇ m.
- Table 1 shows the kinds of abrasives and the properties thereof used in the respective Working Examples and Comparative Examples. Table 1
- the mean particle size was measured with a Microtrac UPA150 (made by Honeywell, Inc.) laser Doppler frequency analysis-type particle size distribution analyzer. The measured values of the grain size are shown in Table 1.
- the pH of the composition was measured using a Horiba, Ltd. D- 13 hydrogen ion concentration meter with glass electrodes.
- a 3.5-inch aluminum disk plated with NiP by electroless plating was employed as a substrate.
- Polishing pad Suede type (Polytex DG, made by Rodel, Inc.)
- Polishing rate Calculated from the decrease in weight of the aluminum disk after polishing
- Table 2 shows the results of evaluation of the polishing properties.
- the symbol A in the "Scratches” column in Table 2 indicates a polishing scratch depth of 2 nm or less.
- the symbol B in the "Scratches” column indicates a polishing scratch depth of 2-10 nm. No polishing scratch depths greater than 10 nm were found in either the Working Examples or Comparative Examples. Comparative Examples 1 to 7
- Titanium oxide (Supertitania F-2) made by SHOWA TITANIUM CO., LTD.. was ground in a stirred mill and course particles were removed by classification, thereby obtaining titanium oxide with a mean particle size of 0.3 ⁇ m.
- water and aluminum nitrate were added in the proportions indicated in Table 3 to prepare an aqueous polishing composition. Polishing was performed in the same manner as in the Working Examples. The results are shown in Table 3. Comparative Example 9
- Type Type (% by Example (% by Type (% by Type (% by (% by ( ⁇ m/min Ra Scratch mass) mass) mass) mass) pH ) ( nm ) es Pits
- Amidosulfuric 6 10 1.0 1.0 2.0 0.11 0.2 A A acid
- the disk When a disk is polished using the polishing composition according to the present invention, the disk can be quickly polished so that the surface roughness becomes extremely low.
- a magnetic disk made of the polished disk is useful as a low-flying head type hard disk capable of achieving high- density storage.
- a magnetic disk thus polished is very useful particularly in high-density storage media (having a storage density of 3 Gbits/inch 2 or greater) represented by media that uses MR heads which utilize the magnetoresistance (MR) effect in magnetic disks, and is also useful from the standpoint of giving media with lower storage densities high reliability.
- high-density storage media having a storage density of 3 Gbits/inch 2 or greater
- MR heads which utilize the magnetoresistance (MR) effect in magnetic disks
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002334406A AU2002334406A1 (en) | 2001-09-03 | 2002-09-03 | Polishing composition |
EP02797709A EP1425357A1 (en) | 2001-09-03 | 2002-09-03 | Polishing composition |
US10/488,296 US20050028449A1 (en) | 2001-09-03 | 2002-09-03 | Polishing composition |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-266315 | 2001-09-03 | ||
JP2001266315 | 2001-09-03 | ||
US31796201P | 2001-09-10 | 2001-09-10 | |
US60/317,962 | 2001-09-10 | ||
JP2002132738A JP4074126B2 (en) | 2001-09-03 | 2002-05-08 | Polishing composition |
JP2002-132738 | 2002-05-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003020839A1 true WO2003020839A1 (en) | 2003-03-13 |
WO2003020839A8 WO2003020839A8 (en) | 2004-04-15 |
Family
ID=27347431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/008925 WO2003020839A1 (en) | 2001-09-03 | 2002-09-03 | Polishing composition |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050028449A1 (en) |
EP (1) | EP1425357A1 (en) |
AU (1) | AU2002334406A1 (en) |
WO (1) | WO2003020839A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004111145A1 (en) * | 2003-06-13 | 2004-12-23 | Showa Denko K.K. | Polishing composition and polishing method |
GB2403954A (en) * | 2003-07-03 | 2005-01-19 | Fujimi Inc | Polishing composition |
WO2007096226A1 (en) * | 2006-02-21 | 2007-08-30 | Evonik Degussa Gmbh | Aluminium oxide-containing dispersion |
CN100352881C (en) * | 2003-04-25 | 2007-12-05 | 圣戈本陶瓷及塑料股份有限公司 | Methods for machining ceramics |
US7550388B2 (en) | 2004-03-24 | 2009-06-23 | Fujima Incorporated | Polishing composition and polishing method |
CN1746253B (en) * | 2004-09-09 | 2010-06-16 | 福吉米株式会社 | Polishing composition and polishing method using the same |
US8080476B2 (en) | 2006-08-02 | 2011-12-20 | Fujimi Incorporated | Polishing composition and polishing process |
US8864860B2 (en) | 2007-12-28 | 2014-10-21 | Fujimi Incorporated | Polishing composition |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4267546B2 (en) * | 2004-04-06 | 2009-05-27 | 花王株式会社 | Substrate manufacturing method |
US7678702B2 (en) * | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
US20070075042A1 (en) * | 2005-10-05 | 2007-04-05 | Siddiqui Junaid A | Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method |
US20090124173A1 (en) * | 2007-11-09 | 2009-05-14 | Cabot Microelectronics Corporation | Compositions and methods for ruthenium and tantalum barrier cmp |
US8974561B2 (en) * | 2011-09-30 | 2015-03-10 | Hoya Corporation | Manufacturing method of glass substrate for magnetic disk, magnetic disk, and magnetic recording / reproducing device |
JP6940315B2 (en) * | 2017-06-22 | 2021-09-22 | 山口精研工業株式会社 | Abrasive composition for magnetic disk substrates |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998023697A1 (en) * | 1996-11-26 | 1998-06-04 | Cabot Corporation | Composition and method for polishing rigid disks |
WO2001012740A1 (en) * | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Polishing system and method of its use |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5783489A (en) * | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
TWI267549B (en) * | 1999-03-18 | 2006-12-01 | Toshiba Corp | Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded wiring |
US6527817B1 (en) * | 1999-11-15 | 2003-03-04 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
US6471884B1 (en) * | 2000-04-04 | 2002-10-29 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with an amino acid-containing composition |
WO2001076819A1 (en) * | 2000-04-07 | 2001-10-18 | Cabot Microelectronics Corporation | Integrated chemical-mechanical polishing |
-
2002
- 2002-09-03 US US10/488,296 patent/US20050028449A1/en not_active Abandoned
- 2002-09-03 AU AU2002334406A patent/AU2002334406A1/en not_active Abandoned
- 2002-09-03 EP EP02797709A patent/EP1425357A1/en not_active Withdrawn
- 2002-09-03 WO PCT/JP2002/008925 patent/WO2003020839A1/en not_active Application Discontinuation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998023697A1 (en) * | 1996-11-26 | 1998-06-04 | Cabot Corporation | Composition and method for polishing rigid disks |
WO2001012740A1 (en) * | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Polishing system and method of its use |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100352881C (en) * | 2003-04-25 | 2007-12-05 | 圣戈本陶瓷及塑料股份有限公司 | Methods for machining ceramics |
WO2004111145A1 (en) * | 2003-06-13 | 2004-12-23 | Showa Denko K.K. | Polishing composition and polishing method |
GB2403954A (en) * | 2003-07-03 | 2005-01-19 | Fujimi Inc | Polishing composition |
GB2403954B (en) * | 2003-07-03 | 2008-01-02 | Fujimi Inc | Polishing composition |
US7550388B2 (en) | 2004-03-24 | 2009-06-23 | Fujima Incorporated | Polishing composition and polishing method |
CN1746253B (en) * | 2004-09-09 | 2010-06-16 | 福吉米株式会社 | Polishing composition and polishing method using the same |
WO2007096226A1 (en) * | 2006-02-21 | 2007-08-30 | Evonik Degussa Gmbh | Aluminium oxide-containing dispersion |
US7834076B2 (en) | 2006-02-21 | 2010-11-16 | Evonik Degussa Gmbh | Aluminium oxide-containing dispersion |
US8080476B2 (en) | 2006-08-02 | 2011-12-20 | Fujimi Incorporated | Polishing composition and polishing process |
US8864860B2 (en) | 2007-12-28 | 2014-10-21 | Fujimi Incorporated | Polishing composition |
Also Published As
Publication number | Publication date |
---|---|
US20050028449A1 (en) | 2005-02-10 |
EP1425357A1 (en) | 2004-06-09 |
AU2002334406A1 (en) | 2003-03-18 |
WO2003020839A8 (en) | 2004-04-15 |
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