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WO2002075876A3 - New quantum dot laser structure - Google Patents

New quantum dot laser structure Download PDF

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Publication number
WO2002075876A3
WO2002075876A3 PCT/IB2002/001842 IB0201842W WO02075876A3 WO 2002075876 A3 WO2002075876 A3 WO 2002075876A3 IB 0201842 W IB0201842 W IB 0201842W WO 02075876 A3 WO02075876 A3 WO 02075876A3
Authority
WO
WIPO (PCT)
Prior art keywords
quantum dot
laser structure
electric field
ground state
dot laser
Prior art date
Application number
PCT/IB2002/001842
Other languages
French (fr)
Other versions
WO2002075876A2 (en
Inventor
Roberto Cingolani
Vittorio Massimo De
Adriana Passaseo
Rinaldis Sergio De
Original Assignee
Agilent Technologies Inc
Roberto Cingolani
Vittorio Massimo De
Adriana Passaseo
Rinaldis Sergio De
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc, Roberto Cingolani, Vittorio Massimo De, Adriana Passaseo, Rinaldis Sergio De filed Critical Agilent Technologies Inc
Publication of WO2002075876A2 publication Critical patent/WO2002075876A2/en
Publication of WO2002075876A3 publication Critical patent/WO2002075876A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present invention uses a p-type Gallium Arsenide substrate or an underlying p-type grown layer with the consequent inversion of the doping sequence in order to realise a n-i-p structure. This results in the heterostructure built-in electric field being opposite to the QD internal dipole electric field. As a consequence the separation of the ground state electron and hole wavefunctions is strongly reduced, resulting in a high efficiency ground state optical emission in the region of 1.4 microns.
PCT/IB2002/001842 2001-03-17 2002-03-18 New quantum dot laser structure WO2002075876A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0106709.9 2001-03-17
GB0106709A GB2373371A (en) 2001-03-17 2001-03-17 Quantum dot laser structure

Publications (2)

Publication Number Publication Date
WO2002075876A2 WO2002075876A2 (en) 2002-09-26
WO2002075876A3 true WO2002075876A3 (en) 2003-11-06

Family

ID=9910960

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2002/001842 WO2002075876A2 (en) 2001-03-17 2002-03-18 New quantum dot laser structure

Country Status (2)

Country Link
GB (1) GB2373371A (en)
WO (1) WO2002075876A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2388957A (en) 2002-05-24 2003-11-26 Imp College Innovations Ltd Quantum dots for extended wavelength operation
RU2249278C2 (en) * 2003-04-21 2005-03-27 Займидорога Олег Антонович Method for generating coherent electromagnetic radiation and dipole nanolaser built around it
RU2266596C1 (en) * 2004-03-26 2005-12-20 Займидорога Олег Антонович Electromagnetic radiation nanoamplifier
CN104393098B (en) * 2014-10-09 2016-05-11 苏州强明光电有限公司 Multijunction solar cell of based semiconductor quantum dot and preparation method thereof
CN104241452B (en) * 2014-10-09 2016-08-24 苏州强明光电有限公司 Flexible quanta solaode and preparation method thereof
CN110854678B (en) * 2018-08-20 2021-02-05 山东华光光电子股份有限公司 Preparation method of GaAs-based high-power laser

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223043A (en) * 1991-02-11 1993-06-29 The United States Of America As Represented By The United States Department Of Energy Current-matched high-efficiency, multijunction monolithic solar cells
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
JPH10326906A (en) * 1997-05-26 1998-12-08 Hamamatsu Photonics Kk Photodetection element and image-pickup element
JPH1187689A (en) * 1997-09-04 1999-03-30 Fujitsu Ltd Manufacturing method of quantum dots

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
DE GIORGI M: "Correlation between shape and electronic states in nanostructures", MICRON, ELSEVIER SCIENCE LTD., vol. 31, 2000, pages 245 - 251, XP002250444, ISSN: 0968-4328 *
FRY P W ET AL: "Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots", PHYSICAL REVIEW LETTERS, 24 JAN. 2000, APS, USA, vol. 84, no. 4, pages 733 - 736, XP002250442, ISSN: 0031-9007 *
MUKAI K ET AL: "HIGH CHARACTERISTIC TEMPERATURE OF NEAR-1.3-MUM INGAAS/GAAS QUANTUM-DOT LASERS AT ROOM TEMPERATURE", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 76, no. 23, 5 June 2000 (2000-06-05), pages 3349 - 3351, XP000954328, ISSN: 0003-6951 *
PARK G ET AL: "ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF A SINGLE-LAYERED 1.3 MUM QUANTUM DOT LASER", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 75, no. 22, 29 November 1999 (1999-11-29), pages 3267 - 3269, XP000875677, ISSN: 0003-6951 *
PASSASEO A ET AL: "DEPENDENCE OF THE EMISSION WAVELENGTH ON THE INTERNAL ELECTRIC FIELD IN QUANTUM-DOT LASER STRUCTURES GROWN BY METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 79, no. 10, 3 September 2001 (2001-09-03), pages 1435 - 1437, XP001083245, ISSN: 0003-6951 *
PASSASEO A ET AL: "Wavelength control from 1.25 to 1.4 mu m in In/sub x/Ga/sub 1-x/As quantum dot structures grown by metal organic chemical vapor deposition", APPLIED PHYSICS LETTERS, 5 MARCH 2001, AIP, USA, vol. 78, no. 10, pages 1382 - 1384, XP002250443, ISSN: 0003-6951 *
SIN Y K ET AL: "HIGH-POWER INGAAS-GAAS STRAINED QUANTUM WELL LASERS WITH INGAP CLADDING LAYERS ON P-TYPE GAAS SUBSTRATES", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 72, no. 7, 1 October 1992 (1992-10-01), pages 3212 - 3214, XP000311307, ISSN: 0021-8979 *

Also Published As

Publication number Publication date
GB2373371A (en) 2002-09-18
GB0106709D0 (en) 2001-05-09
WO2002075876A2 (en) 2002-09-26

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