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WO2002054442A3 - Ion beam collimating system - Google Patents

Ion beam collimating system Download PDF

Info

Publication number
WO2002054442A3
WO2002054442A3 PCT/US2001/049866 US0149866W WO02054442A3 WO 2002054442 A3 WO2002054442 A3 WO 2002054442A3 US 0149866 W US0149866 W US 0149866W WO 02054442 A3 WO02054442 A3 WO 02054442A3
Authority
WO
WIPO (PCT)
Prior art keywords
ion beam
magnetic field
magnetic
collimating system
beam collimating
Prior art date
Application number
PCT/US2001/049866
Other languages
French (fr)
Other versions
WO2002054442A2 (en
Inventor
Harald Enge
Original Assignee
Proteros Llc
Harald Enge
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Proteros Llc, Harald Enge filed Critical Proteros Llc
Priority to AU2002239682A priority Critical patent/AU2002239682A1/en
Publication of WO2002054442A2 publication Critical patent/WO2002054442A2/en
Publication of WO2002054442A3 publication Critical patent/WO2002054442A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An ion beam collimation system is used in ion implantation equipment to focus the beam and render the beam in parallel. A magnetic lens assembly produces these results by the action of opposed magnetic plates (214, 216) that produce magnetization vectors (204, 206) or opposite orientation. The magnetic field within a gap between the two plates varies linearly with distance from a central point (229) of neutral magnetic field.
PCT/US2001/049866 2000-12-28 2001-12-28 Ion beam collimating system WO2002054442A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002239682A AU2002239682A1 (en) 2000-12-28 2001-12-28 Ion beam collimating system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25884400P 2000-12-28 2000-12-28
US60/258,844 2000-12-28

Publications (2)

Publication Number Publication Date
WO2002054442A2 WO2002054442A2 (en) 2002-07-11
WO2002054442A3 true WO2002054442A3 (en) 2003-01-30

Family

ID=22982357

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/049866 WO2002054442A2 (en) 2000-12-28 2001-12-28 Ion beam collimating system

Country Status (2)

Country Link
AU (1) AU2002239682A1 (en)
WO (1) WO2002054442A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7019314B1 (en) * 2004-10-18 2006-03-28 Axcelis Technologies, Inc. Systems and methods for ion beam focusing
CN103779161B (en) * 2012-11-08 2016-01-13 北京中科信电子装备有限公司 Broadband beam scanning method for uniform ion implantation

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2052146A (en) * 1979-06-04 1981-01-21 Varian Associates Unitary Electromagnet for Double Deflection Scanning of Charged Particle Beam
US4578663A (en) * 1984-11-29 1986-03-25 Lockheed Missiles & Space Company, Inc. Magnetic assembly
EP0473097A2 (en) * 1990-08-29 1992-03-04 Nissin Electric Company, Limited System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US5483077A (en) * 1990-08-29 1996-01-09 Nissin Electric Co., Ltd. System and method for magnetic scanning, accelerating, and implanting of an ion beam
US5751002A (en) * 1995-01-31 1998-05-12 Nihon Shinku Gijutsu Kabushiki Kaisha Ion implantation apparatus
US6060715A (en) * 1997-10-31 2000-05-09 Applied Materials, Inc. Method and apparatus for ion beam scanning in an ion implanter

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2052146A (en) * 1979-06-04 1981-01-21 Varian Associates Unitary Electromagnet for Double Deflection Scanning of Charged Particle Beam
US4578663A (en) * 1984-11-29 1986-03-25 Lockheed Missiles & Space Company, Inc. Magnetic assembly
EP0473097A2 (en) * 1990-08-29 1992-03-04 Nissin Electric Company, Limited System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US5483077A (en) * 1990-08-29 1996-01-09 Nissin Electric Co., Ltd. System and method for magnetic scanning, accelerating, and implanting of an ion beam
US5751002A (en) * 1995-01-31 1998-05-12 Nihon Shinku Gijutsu Kabushiki Kaisha Ion implantation apparatus
US6060715A (en) * 1997-10-31 2000-05-09 Applied Materials, Inc. Method and apparatus for ion beam scanning in an ion implanter

Also Published As

Publication number Publication date
WO2002054442A2 (en) 2002-07-11
AU2002239682A1 (en) 2002-07-16

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