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WO2002001603A3 - Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same - Google Patents

Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same Download PDF

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Publication number
WO2002001603A3
WO2002001603A3 PCT/EP2001/007189 EP0107189W WO0201603A3 WO 2002001603 A3 WO2002001603 A3 WO 2002001603A3 EP 0107189 W EP0107189 W EP 0107189W WO 0201603 A3 WO0201603 A3 WO 0201603A3
Authority
WO
WIPO (PCT)
Prior art keywords
source
thin film
drain electrodes
type thin
film transistor
Prior art date
Application number
PCT/EP2001/007189
Other languages
French (fr)
Other versions
WO2002001603A2 (en
Inventor
Teizo Yukawa
Original Assignee
Koninkl Philips Electronics Nv
Teizo Yukawa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Teizo Yukawa filed Critical Koninkl Philips Electronics Nv
Priority to KR1020027002269A priority Critical patent/KR20020062276A/en
Priority to EP01965033A priority patent/EP1297568A2/en
Publication of WO2002001603A2 publication Critical patent/WO2002001603A2/en
Publication of WO2002001603A3 publication Critical patent/WO2002001603A3/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The object of the invention is to provide a bottom gate type thin film transistor and a manufacturing method of it, which can reduce a burden of TFT manufacturing process and thereby a less manufacturing cost is required. A bottom gate type thin film transistor is provided, in which a base layer (1), a gate electrode (2), a gate isolation film (3), and source and drain electrodes (4, 5) are located in this order. The transistor comprises a semiconductor channel layer (6) which is in contact with a portion of the gate isolation film exposed between the source and drain electrodes (4, 5) while being in contact with respective inter-opposite ends of the source and drain electrodes (4,5) and being formed in association with the gate electrode (2). The channel layer (6) is bridged from one of the inter-opposite ends to the other on the upper face side of the source and drain electrodes (4, 5). Contact portions (6c) of the channel layer (6) with the source and drain electrodes (4, 5) form ohmic contact surface layers.
PCT/EP2001/007189 2000-06-26 2001-06-25 Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same WO2002001603A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020027002269A KR20020062276A (en) 2000-06-26 2001-06-25 Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same
EP01965033A EP1297568A2 (en) 2000-06-26 2001-06-25 Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-190765 2000-06-26
JP2000190765A JP2002026326A (en) 2000-06-26 2000-06-26 Bottom-gate thin film transistor, method of manufacturing the same, and liquid crystal display device using the same

Publications (2)

Publication Number Publication Date
WO2002001603A2 WO2002001603A2 (en) 2002-01-03
WO2002001603A3 true WO2002001603A3 (en) 2002-08-08

Family

ID=18690177

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/007189 WO2002001603A2 (en) 2000-06-26 2001-06-25 Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same

Country Status (6)

Country Link
EP (1) EP1297568A2 (en)
JP (1) JP2002026326A (en)
KR (1) KR20020062276A (en)
CN (1) CN1401135A (en)
TW (1) TW536828B (en)
WO (1) WO2002001603A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0210065D0 (en) * 2002-05-02 2002-06-12 Koninkl Philips Electronics Nv Electronic devices comprising bottom gate tft's and their manufacture
JP4403354B2 (en) * 2002-09-11 2010-01-27 ソニー株式会社 Thin film circuit board
ATE358895T1 (en) * 2003-03-07 2007-04-15 Koninkl Philips Electronics Nv METHOD FOR PRODUCING AN ELECTRONIC ARRANGEMENT
KR100977229B1 (en) * 2003-12-30 2010-08-23 엘지디스플레이 주식회사 Organic TFT and manufacturing method thereof, and liquid crystal display device using the same
CN101278403B (en) 2005-10-14 2010-12-01 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
JP2007248956A (en) * 2006-03-17 2007-09-27 Epson Imaging Devices Corp Electro-optical device and electronic equipment
CN100449716C (en) * 2006-03-20 2009-01-07 友达光电股份有限公司 Thin film transistor and method of manufacturing the same
KR101265331B1 (en) * 2006-06-28 2013-05-23 엘지디스플레이 주식회사 Thin film transistor and method for fabricating thereof and method for fabricating liquid crystal display device having thereof
KR100965260B1 (en) 2008-01-25 2010-06-22 삼성모바일디스플레이주식회사 Thin film transistor, manufacturing method thereof and organic light emitting display device having same
KR101665734B1 (en) * 2008-09-12 2016-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US20100253902A1 (en) * 2009-04-07 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
JP2011071476A (en) 2009-08-25 2011-04-07 Canon Inc Thin film transistor, display device using the same, and method of manufacturing thin film transistor
TWI471946B (en) * 2010-11-17 2015-02-01 Innolux Corp Thin film transistor
CN102176413A (en) * 2011-03-25 2011-09-07 信利半导体有限公司 Thin-film transistor forming method and thin-film transistor
JP5447996B2 (en) * 2011-10-14 2014-03-19 ソニー株式会社 THIN FILM TRANSISTOR, METHOD FOR PRODUCING THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE
KR101427477B1 (en) * 2012-10-11 2014-08-08 하이디스 테크놀로지 주식회사 Liquid crystal display device
KR102300402B1 (en) 2015-01-09 2021-09-09 삼성디스플레이 주식회사 Organic light emitting diode display
CN108695394A (en) * 2017-04-06 2018-10-23 京东方科技集团股份有限公司 Thin film transistor (TFT), preparation method, array substrate and display device
US11908911B2 (en) * 2019-05-16 2024-02-20 Intel Corporation Thin film transistors with raised source and drain contacts and process for forming such

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5827760A (en) * 1996-02-12 1998-10-27 Lg Electronics Inc. Method for fabricating a thin film transistor of a liquid crystal display device
US5864149A (en) * 1996-04-18 1999-01-26 Nec Corporation Staggered thin film transistor with transparent electrodes and an improved ohmic contact structure
WO2001015234A1 (en) * 1999-08-24 2001-03-01 Koninklijke Philips Electronics N.V. Thin-film transistors and method for producing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5827760A (en) * 1996-02-12 1998-10-27 Lg Electronics Inc. Method for fabricating a thin film transistor of a liquid crystal display device
US5864149A (en) * 1996-04-18 1999-01-26 Nec Corporation Staggered thin film transistor with transparent electrodes and an improved ohmic contact structure
WO2001015234A1 (en) * 1999-08-24 2001-03-01 Koninklijke Philips Electronics N.V. Thin-film transistors and method for producing the same

Also Published As

Publication number Publication date
JP2002026326A (en) 2002-01-25
KR20020062276A (en) 2002-07-25
EP1297568A2 (en) 2003-04-02
CN1401135A (en) 2003-03-05
TW536828B (en) 2003-06-11
WO2002001603A2 (en) 2002-01-03

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