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WO2001050500A2 - White light source - Google Patents

White light source Download PDF

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Publication number
WO2001050500A2
WO2001050500A2 PCT/RU2000/000544 RU0000544W WO0150500A2 WO 2001050500 A2 WO2001050500 A2 WO 2001050500A2 RU 0000544 W RU0000544 W RU 0000544W WO 0150500 A2 WO0150500 A2 WO 0150500A2
Authority
WO
WIPO (PCT)
Prior art keywords
light
transformer
columns
phosphor
white light
Prior art date
Application number
PCT/RU2000/000544
Other languages
French (fr)
Other versions
WO2001050500A3 (en
Inventor
Evgeny Invievich Givargizov
Vladimir Semenovich Abramov
Naum Petrovich Soshchin
Michail Evgen'evich Givargizov
Original Assignee
Evgeny Invievich Givargizov
Vladimir Semenovich Abramov
Naum Petrovich Soshchin
Givargizov Michail Evgen Evich
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evgeny Invievich Givargizov, Vladimir Semenovich Abramov, Naum Petrovich Soshchin, Givargizov Michail Evgen Evich filed Critical Evgeny Invievich Givargizov
Priority to AU25623/01A priority Critical patent/AU2562301A/en
Publication of WO2001050500A2 publication Critical patent/WO2001050500A2/en
Publication of WO2001050500A3 publication Critical patent/WO2001050500A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder

Definitions

  • This invention relates to light engineering, microelectronic components, and electron materials science.
  • White sources are known, for example, as luminescent lamps where radiation excited by low-pressure gaseous discharge of mercury vapors is transformed into visible (“white”) light by phosphor [1].
  • the luminescent lamps have some serious drawbacks:
  • White light sources are known as solid-state semiconductor light emited diodes (LED) based on gallium nitride and related compounds [2].
  • LED solid-state semiconductor light emited diodes
  • gallium nitride and related compounds [2].
  • short-wave (blue) light emitted by the diode is partially transformed by a phosphor into longer-wave (for example, yellow) light and then, being mixed with the initial blue light, gives the white radiation.
  • Standard phosphors are formed by a set of fine (micron- and submicron) crystalline grains of approximately isometric forms arranged chaotically one on another (Fig. 1).
  • 2 :Ce phosphor is used in [2].
  • the phosphor is distributed in an organic binder. Such a phosphor absorbs the initial blue radiation of the LED and emits yellow light with wave-length 565 nanometers. By mixing the two radiations, white radiation is formed.
  • a white light source includes light emitting diode and phosphor transformer.
  • the transformer is implemented as single-crystalline phosphor columns arranged on a transparent substrate. The columns are mutually parallel, forms angles 10° to 90° with the substrate, have cross-sections of various shapes. Heights of the columns exceed their diameter. Gaps exist between the columns, the gaps being filled by high-refractive material.
  • the light-emitting diode emits light in the range 440-480 nanometers with the absorption coefficient more than 10 6 m "1 , whereas the transformer emits light with the wave-length in the range 560-590 nanometers at the ratio of yellow-light power, generated by the transformer, to the blue-light power conserved after passing the columns, more than 2: 1.
  • the transformer is placed on the output surface of the light-emitting diode being connected with it via an immersion medium that has a refraction coefficient lower than the refraction coefficient of the phosphor.
  • the ratio of the height of the columns to their diameter is not less than 2.
  • the transformer can be faced to the surface of the light-emitting diode by either its substrate or by the columns.
  • the volume of the columns takes more than 90% of the transformer.
  • Fig. 1 A scheme of the standard phosphor consisting of approximately isometric crystalline grains: 1 - light or electron beam; 2 - transparent substrate.
  • Fig. 2. A scheme for propagation of light in columnar crystals: 1 - light or electron beam; 2 - transparent substrate.
  • Fig. 3 A scheme of white light source that contains a light-emitting diode, a phosphor transformer, and an immersion connecting layer: 1 - the light-emitting diode; 2 - the immersion layer; 3 - a transparent substrate; 4 - luminescent (phosphor) columns; 5 - gaps between the columns filled with a low-melting-point light-absorbing material.
  • Fig. 4. Two versions of the transformer arrangement: a - by the columns faced to the light-emitting diode; b - by the substrate faced to the light-emitting diode.
  • the light is channeled by passing it through elongated phosphor crystalline grains. This is implemented with using phosphor having columnar structure proposed in [3]. In such phosphors, the light propagates along the columns reflecting from their walls according to the full internal reflection Fig. 2). Typically, it is undergoing only a small losses.
  • the columnar phosphors contain no organic binder.
  • FIG. 3 A scheme of the proposed white light source is depicted in Fig. 3.
  • An immersion layer is placed between the light source and the transformer.
  • the layer can contain various transparent substances such as silicones, polymers, epoxies, low- melting point eutectics such as KCl+NaCl+LiCl+MgCl etc.
  • the light from the light-emitting diode arrives through the immersion layer to butt-ends of the columns.
  • the blue light propagates along the columns, it is transformed into yellow light that is a "complementary" to the blue one.
  • phosphor columns are created that are able a part of the blue light arriving from the light-emitting diode to transform into yellow light.
  • the ratio of the formed yellow light to the remaining part of the blue light (after passing the columns) should be (in power or, better, in the number of quantums) about or slightly more than 2:1.
  • Phosphor columns are formed of light-c.onductive thermal-conductive inorganic material. They are attached to an inorganic (glass) substrate by a large contact area.
  • the good thermal conductivity provides an advantage to the phosphor transformer and, in such a way, to all the light source. This advantage is ensured also by the fact that total volume of the columns takes more than 90% of the transformer. Remaining part of the phosphor, namely gaps between the columns, are filled with electroconductive (accordingly, good-thermal-conductive) high-refractive material.
  • the white light source is ensured by the fact that it is characterized by a good spectral matching between the wavelength of the light-emitting diode (450-480 nm) and the maximum exciting spectrum of the phosphor transformer used (440-475 nm).
  • High absorption coefficient of the phosphor used (10 6 - 5.10 6 m "1 ) allows to reach a high (more than 50-60%) level abso ⁇ tion of gallium nitride light-emitting diode even at a small (about several micrometers) height of the phosphor columns.
  • the yellow light formed contains about 70% quantums; together with 30% remaining quantums of the blue light bright white light is generated.
  • the columnar phosphor is produced of a solid solution of ZnS:CdS having the proportion 70:30 to 50:50 doped with copper at concentration 1.10 " to 1.10 " gram/gram (gram Cu/gram ZnS+CdS).
  • the columnar phosphor is prepared by vapor deposition according to the patent application [3].
  • the structure obtained is filled by a high-refractive low-melting-point material, such as Bi 2 O 3 -B O 3 , is ground and polished.
  • a high-refractive low-melting-point material such as Bi 2 O 3 -B O 3
  • the white light sources have numerous applications: light sources of domestic and industrial applications;

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  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

White light source is proposed that includes light-emitting diode and phosphor transformer. The diode emits blue light that is applied to the transformer implemented as columnar-shaped single-crystalline phosphor. Part of the light, more than half in quantums, being mixed, is transformed here into yellow quantums. The both parts, being mixed together, give white light. Owing to the columnar structure of the transformer, the white light has a directional nature. This expands the spectrum of applications of the white light sources.

Description

WHITE LIGHT SOURCE
FIELD OF THE INVENTION This invention relates to light engineering, microelectronic components, and electron materials science.
BACKGROUND OF THE INVENTION White sources are known, for example, as luminescent lamps where radiation excited by low-pressure gaseous discharge of mercury vapors is transformed into visible ("white") light by phosphor [1]. However, the luminescent lamps have some serious drawbacks:
(a) the mercury vapors are ecologically unacceptable: both at destroying of the lamps and during their production;
(b) efficiency of the lamps (about 12 lm/W), although higher than that of incandescent lamp (about 5 lm/W), is still rather low.
White light sources are known as solid-state semiconductor light emited diodes (LED) based on gallium nitride and related compounds [2]. In such devices, short-wave (blue) light emitted by the diode is partially transformed by a phosphor into longer-wave (for example, yellow) light and then, being mixed with the initial blue light, gives the white radiation.
The efficiency of such light sources depends strongly on the efficiency of transformation of the phosphor. Standard phosphors are formed by a set of fine (micron- and submicron) crystalline grains of approximately isometric forms arranged chaotically one on another (Fig. 1). In particular, fine-crystalline Y Al Ga2 0|2:Ce phosphor is used in [2]. The phosphor is distributed in an organic binder. Such a phosphor absorbs the initial blue radiation of the LED and emits yellow light with wave-length 565 nanometers. By mixing the two radiations, white radiation is formed.
However, at propagation of the light, both the initial and exited ones, through the phosphor, it is scattered by the grains and partially lost. As a result, efficiency of the light transformation is decreased, sometimes significantly. One more drawback of the transformation used in [2] is the fact that, due to a low thermal conductivity of the organic binder, the phosphor is superheated and, on this reason, deteriorates.
These drawbacks are eliminated in the our invention.
SUMMARY OF THE INVENTION
A white light source is proposed that includes light emitting diode and phosphor transformer. The transformer is implemented as single-crystalline phosphor columns arranged on a transparent substrate. The columns are mutually parallel, forms angles 10° to 90° with the substrate, have cross-sections of various shapes. Heights of the columns exceed their diameter. Gaps exist between the columns, the gaps being filled by high-refractive material. The light-emitting diode emits light in the range 440-480 nanometers with the absorption coefficient more than 106 m"1, whereas the transformer emits light with the wave-length in the range 560-590 nanometers at the ratio of yellow-light power, generated by the transformer, to the blue-light power conserved after passing the columns, more than 2: 1. The transformer is placed on the output surface of the light-emitting diode being connected with it via an immersion medium that has a refraction coefficient lower than the refraction coefficient of the phosphor.
The ratio of the height of the columns to their diameter is not less than 2.
The transformer can be faced to the surface of the light-emitting diode by either its substrate or by the columns.
The volume of the columns takes more than 90% of the transformer.
BRIEF DESCRIPTION OF DRAWINGES Fig. 1. A scheme of the standard phosphor consisting of approximately isometric crystalline grains: 1 - light or electron beam; 2 - transparent substrate. Fig. 2. A scheme for propagation of light in columnar crystals: 1 - light or electron beam; 2 - transparent substrate.
Fig. 3. A scheme of white light source that contains a light-emitting diode, a phosphor transformer, and an immersion connecting layer: 1 - the light-emitting diode; 2 - the immersion layer; 3 - a transparent substrate; 4 - luminescent (phosphor) columns; 5 - gaps between the columns filled with a low-melting-point light-absorbing material. Fig. 4. Two versions of the transformer arrangement: a - by the columns faced to the light-emitting diode; b - by the substrate faced to the light-emitting diode.
BEST VERSION FOR REALIZATION OF THE INVENTION
In the light source proposed, the light is channeled by passing it through elongated phosphor crystalline grains. This is implemented with using phosphor having columnar structure proposed in [3]. In such phosphors, the light propagates along the columns reflecting from their walls according to the full internal reflection Fig. 2). Typically, it is undergoing only a small losses.
In addition, the columnar phosphors contain no organic binder.
A scheme of the proposed white light source is depicted in Fig. 3. An immersion layer is placed between the light source and the transformer. The layer can contain various transparent substances such as silicones, polymers, epoxies, low- melting point eutectics such as KCl+NaCl+LiCl+MgCl etc.
The light from the light-emitting diode arrives through the immersion layer to butt-ends of the columns. When the blue light propagates along the columns, it is transformed into yellow light that is a "complementary" to the blue one.
Thus, in accordance with the current invention, phosphor columns are created that are able a part of the blue light arriving from the light-emitting diode to transform into yellow light. In order to ensure formation of the white light, the ratio of the formed yellow light to the remaining part of the blue light (after passing the columns) should be (in power or, better, in the number of quantums) about or slightly more than 2:1.
Phosphor columns are formed of light-c.onductive thermal-conductive inorganic material. They are attached to an inorganic (glass) substrate by a large contact area. The good thermal conductivity provides an advantage to the phosphor transformer and, in such a way, to all the light source. This advantage is ensured also by the fact that total volume of the columns takes more than 90% of the transformer. Remaining part of the phosphor, namely gaps between the columns, are filled with electroconductive (accordingly, good-thermal-conductive) high-refractive material.
Good light-engineering parameters of the white light source are ensured by the fact that it is characterized by a good spectral matching between the wavelength of the light-emitting diode (450-480 nm) and the maximum exciting spectrum of the phosphor transformer used (440-475 nm). High absorption coefficient of the phosphor used (106 - 5.106 m"1) allows to reach a high (more than 50-60%) level absoφtion of gallium nitride light-emitting diode even at a small (about several micrometers) height of the phosphor columns. At the quantum yield of the photoluminescence about 1 , the yellow light formed contains about 70% quantums; together with 30% remaining quantums of the blue light bright white light is generated.
EXAMPLE
The columnar phosphor is produced of a solid solution of ZnS:CdS having the proportion 70:30 to 50:50 doped with copper at concentration 1.10" to 1.10" gram/gram (gram Cu/gram ZnS+CdS). The columnar phosphor is prepared by vapor deposition according to the patent application [3].
After the deposition of the columnar phosphor the structure obtained is filled by a high-refractive low-melting-point material, such as Bi2O3-B O3, is ground and polished.
The white light sources have numerous applications: light sources of domestic and industrial applications;
- traffic lights;
- lighting scales;
- point static and dynamic indicators with running line; multielement situation screens; others.
REFERENCES
1. Encyclopaedia "Electronics", Moscow 1991 , p. 258 (in Russian).
2. R.Dixon, Who's Who in Blue and Green LEDs, Compound Semiconductor 5 (1999) #5, pp. 15-19.
3. E.I.Givargizov, L.A.Zadorozlinaya, A.N.Stepanova, N.P.Soshchin, N.N.Chubun, and M.E.Givargizov, Cathodoluminescent Screen with a Columnar Structure, and the Method for its Preparation, WO 99/22394 (1999).

Claims

1. White light source including light emitting diode and phosphor transformer wherein the transformer is implemented by single-crystalline phosphor columns arranged on a transparent substrate, the columns have are mutually parallel, forms angles 10° to 90° with the substrate, have cross-sections of various shapes, preferentially isometric ones, heights of the columns exceed their diameter, gaps exist between the columns, the gaps being filled by high-refractive material, the light- emitting diode emits light in the range 440-480 nanometers with the absoφtion coefficient more than 105 m"1, the transformer emits light with the wave-length in the range 560-590 nanometers at the ratio of yellow-light power, generated by the transformer, to the blue-light power conserved after passing the columns, more than 2:1, the transformer is placed on the output surface of the light-emitting diode being connected with it via an immersion medium that has a refraction coefficient lower than the refraction coefficient of the phosphor.
2. The white light source according to the point 1 wherein the ratio of the height of the columns to their diameter is not less than 2.
3. The white light source according to the point 2 wherein the transformer is faced to the surface of the light-emitting diode by its substrate.
4. The white light source according to the point 2 wherein the transformer is faced to the surface of the light-emitting diode by the columns.
5. The white light source according to the point 1 wherein the volume of the columns takes more than 90% of the transformer.
PCT/RU2000/000544 1999-12-30 2000-12-29 White light source WO2001050500A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU25623/01A AU2562301A (en) 1999-12-30 2000-12-29 White light source

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU99127926/09A RU2214073C2 (en) 1999-12-30 1999-12-30 White light source
RU99127926 1999-12-30

Publications (2)

Publication Number Publication Date
WO2001050500A2 true WO2001050500A2 (en) 2001-07-12
WO2001050500A3 WO2001050500A3 (en) 2001-12-20

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RU2219622C1 (en) * 2002-10-25 2003-12-20 Закрытое акционерное общество "Светлана-Оптоэлектроника" Semiconductor white light source
US6933502B2 (en) * 2001-08-27 2005-08-23 Canon Kabushiki Kaisha Radiation detection device and system, and scintillator panel provided to the same
US7125501B2 (en) 2003-04-21 2006-10-24 Sarnoff Corporation High efficiency alkaline earth metal thiogallate-based phosphors
US7368179B2 (en) 2003-04-21 2008-05-06 Sarnoff Corporation Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors
WO2009119034A1 (en) 2008-03-26 2009-10-01 Panasonic Corporation Semiconductor light-emitting apparatus

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KR101209488B1 (en) 2004-07-06 2012-12-07 라이트스케이프 머티어리얼스, 인코포레이티드 Efficient, green-emitting phosphors, and combinations with red-emitting phosphors
EP1801840A4 (en) * 2004-09-20 2010-06-02 Givargizov Mikhail Evgenievich Columnar structure, method for the production thereof and devices based thereon
RU2418340C2 (en) * 2004-09-29 2011-05-10 Михаил Евгеньевич Гиваргизов Column structure and device based on said structure
WO2006049533A2 (en) * 2004-11-05 2006-05-11 Mikhail Evgenjevich Givargizov Radiating devices and method for the production thereof
RU2359362C2 (en) * 2004-12-22 2009-06-20 Сеул Семикондактор Ко., Лтд. Light-emitting device
US7276183B2 (en) 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
US8906262B2 (en) 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
RU2301475C1 (en) * 2005-12-09 2007-06-20 Общество с ограниченной ответственностью Научно-производственное предприятие "Экосвет" Light-emitting assembly, method for creating fluorescence of light-emitting assembly, and device implementing this method
KR20090089384A (en) * 2006-11-10 2009-08-21 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Lighting system comprising monolithic ceramic light-emitting converter, composite monolithic ceramic light-emitting converter and method for manufacturing composite monolithic ceramic light-emitting converter
JP5662141B2 (en) * 2007-03-30 2015-01-28 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン OLED with improved light outcoupling
DE202007019100U1 (en) * 2007-09-12 2010-09-02 Lumitech Produktion Und Entwicklung Gmbh LED module, LED bulb and LED light for energy-efficient reproduction of white light
RU2350834C1 (en) * 2007-11-26 2009-03-27 Юлия Алексеевна Щепочкина Luminary
WO2011033431A1 (en) * 2009-09-17 2011-03-24 Koninklijke Philips Electronics N.V. Lighting device with off-state white appearance
RU2555199C2 (en) * 2010-03-16 2015-07-10 Конинклейке Филипс Электроникс Н.В. Lighting device
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NL2008849C2 (en) * 2012-05-22 2013-11-25 Robertus Gerardus Alferink Luminaire for long day-lighting.
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US6963070B2 (en) 2001-08-27 2005-11-08 Canon Kabushiki Kaisha Radiation detection device and system, and scintillator panel provided to the same
US6974955B2 (en) 2001-08-27 2005-12-13 Canon Kabushiki Kaisha Radiation detection device and system, and scintillator panel provided to the same
RU2219622C1 (en) * 2002-10-25 2003-12-20 Закрытое акционерное общество "Светлана-Оптоэлектроника" Semiconductor white light source
WO2004038815A1 (en) * 2002-10-25 2004-05-06 'svetlana-Optoelektronika' Semiconductor white light source
US7125501B2 (en) 2003-04-21 2006-10-24 Sarnoff Corporation High efficiency alkaline earth metal thiogallate-based phosphors
US7368179B2 (en) 2003-04-21 2008-05-06 Sarnoff Corporation Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors
WO2009119034A1 (en) 2008-03-26 2009-10-01 Panasonic Corporation Semiconductor light-emitting apparatus
US8337032B2 (en) 2008-03-26 2012-12-25 Panasonic Corporation Semiconductor light-emitting apparatus
CN101960619B (en) * 2008-03-26 2013-06-26 松下电器产业株式会社 semiconductor light emitting device

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WO2001050500A3 (en) 2001-12-20
RU2214073C2 (en) 2003-10-10
AU2562301A (en) 2001-07-16

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