WO2001046994A1 - Device and method for treating substrates - Google Patents
Device and method for treating substrates Download PDFInfo
- Publication number
- WO2001046994A1 WO2001046994A1 PCT/EP2000/012139 EP0012139W WO0146994A1 WO 2001046994 A1 WO2001046994 A1 WO 2001046994A1 EP 0012139 W EP0012139 W EP 0012139W WO 0146994 A1 WO0146994 A1 WO 0146994A1
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- WO
- WIPO (PCT)
- Prior art keywords
- treatment
- treatment fluid
- gas
- gas layer
- fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H10P72/0426—
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- H10P72/0416—
Definitions
- a concentration of the treatment fluid e.g. B. the concentration of dilute hydrofluoric acid (DHF) changed by evaporation of H 2 0, in particular increased. It is also possible that foreign substances in the vicinity of the treatment basin come into contact with the treatment fluid and cause a change in the fluid properties.
- DHF dilute hydrofluoric acid
- DE-A-4232925 discloses a process for the preparation of 3-, 8-substituted deuteroporphyrin derivatives in which precursor products of the derivatives are overlaid with nitrogen during their production in order to avoid oxidation of the precursor products.
- the present invention is therefore based on the object of keeping the properties of the treatment fluid as constant as possible during the treatment.
- this object is achieved in a method for treating semiconductor substrates in a treatment tank filled with treatment fluid in that a gas layer which suppresses an exchange of molecules and / or foreign substances between the treatment fluid and the environment is generated above the treatment fluid during the treatment.
- the gas layer above the treatment fluid leads to a vapor phase between the treatment fluid and the gas layer being kept in equilibrium, as a result of which a diffusion of molecules is suppressed. Furthermore, foreign substances from the area surrounding the treatment basin are prevented from coming into contact with the treatment fluid and dissolving therein.
- the gas layer preferably contains at least one inert gas, in particular N 2 , which is inexpensive and does not dissolve itself in the treatment fluid and causes a change in the properties of the treatment fluid.
- inert gas in particular N 2
- the object on which the invention is based is achieved in a device for treating semiconductor substrates, with a treatment tank filled with treatment fluid, in that a gas introduction device for generating a gas layer above the treatment fluid that suppresses an exchange of molecules and / or foreign substances between the treatment fluid and the environment is provided during the treatment process. This enables the generation of a gas layer, which results in the advantages already mentioned above.
- the gas introduction device preferably has at least one nozzle which is directed essentially parallel to the treatment fluid surface in order to produce a gas carpet which extends parallel to the treatment fluid surface.
- the gas introduction device preferably has an annular channel which is adapted to the circumferential shape of the treatment basin and has a plurality of inwardly directed nozzles in order to produce a uniform gas carpet.
- the gas layer preferably contains an inert gas, in particular N 2 .
- Figure 1 is a schematic, perspective view of the device for treating substrates according to the invention.
- Fig. 3 is a schematic plan view of the device according to the invention.
- FIGS. 1 to 3 show a device 1 for the wet treatment of semiconductor wafers, with a treatment basin 3, which can be filled with treatment fluid 6 via a diffuser 5.
- a drain 8 is provided for the treatment liquid after a treatment drain.
- the treatment basin 3 is surrounded by an overflow 10 which has an outlet 11.
- a ring line 14 is provided which is adapted to the circumferential shape of the treatment basin and which has a multiplicity of outlet openings 16 pointing inwards and directed parallel to a surface of the treatment fluid 6.
- the ring line 14 is connected in a suitable manner to a supply line 18, which in turn is connected to a nitrogen supply.
- a suitable device For the treatment of the semiconductor wafers, these are inserted into the treatment basin 3 via a suitable device, which has a suitable holding device, not shown, for the wafers.
- the treatment tank 3 is then flowed through the diffuser 5 with a treatment liquid 6 such as, for example, dilute hydrofluoric acid (DHF), in such a way that the treatment liquid flows into the overflow 10 via an upper edge of the treatment tank 3.
- a treatment liquid 6 such as, for example, dilute hydrofluoric acid (DHF), in such a way that the treatment liquid flows into the overflow 10 via an upper edge of the treatment tank 3.
- DHF dilute hydrofluoric acid
- nitrogen is introduced into the ring line 14 via the supply line 18.
- the nitrogen emerges from the ring line 14 through the outlet openings 16, as shown by the arrows A in FIGS. 2 and 3.
- the gas supply is controlled so that the gas emerges from the openings 16 at a speed of approximately 10 meters per second. This forms a closed N 2 layer
- the invention was previously described with reference to a preferred embodiment of the invention, but without being limited to this specifically illustrated embodiment.
- other gases in particular inert gases or combinations of different gases, can be used instead of N 2 .
- Can also Different outflow velocities of the gas from the ring line 14 can be provided.
- the gas layer can also be roof-shaped instead of parallel to the treatment fluid surface.
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Vorrichtung und Verfahren zum Behandeln von Substraten Device and method for treating substrates
Die vorliegende Erfindung bezieht sich auf eine Vorrichtung und ein Verfahren zum Behandeln Halbleitersubstraten, in einem mit Behandlungsfluid gefüllten Behandlungsbecken.The present invention relates to an apparatus and a method for treating semiconductor substrates in a treatment tank filled with treatment fluid.
Bei Fertigungsprozessenin der Halbleiterindustrie, ist es notwendig, die Halbleitersubstrate mit einem Behandlungsfluid zu behandeln. Ein Beispiel hierfür ist die Naßbehandlung von Halbleitersubstraten bei der Chipfertigung.In manufacturing processes in the semiconductor industry, it is necessary to treat the semiconductor substrates with a treatment fluid. An example of this is the wet treatment of semiconductor substrates during chip production.
Aus der EP-B-0 385 536 ist eine Vorrichtung zur Naßbehandlung von Halbleitersubstraten in einem Behandlungsfluid enthaltenden Behälter bekannt, bei der die Halbleitersubstrate zur Behandlung in den fluidgefüllten Behälter eingesetzt werden. Die Halbleitersubtrate, werden für eine bestimmte Prozeßzeit in dem Behandlungsbecken gehalten und anschließend aus dem Behandlungsfluid herausbewegt. Dabei wird ein die Oberflächenspannung des Be- handlungsfluids verringerndes Fluid auf das Behandlungsfluid aufgebracht, um eine Trocknung der Halbleiterwafer gemäß dem Marangoniverfahren zu erreichen.From EP-B-0 385 536 a device for wet treatment of semiconductor substrates in a container containing treatment fluid is known, in which the semiconductor substrates are used for treatment in the fluid-filled container. The semiconductor substrates are held in the treatment tank for a certain process time and then moved out of the treatment fluid. A fluid which reduces the surface tension of the treatment fluid is applied to the treatment fluid in order to achieve drying of the semiconductor wafers in accordance with the Marangoni method.
Während der Behandlung der Halbleiterwafer in dem Behandlungsfluid ist es möglich, daß sich eine Konzentration des Behandlungsfluids, z. B. die Konzentration verdünnter Flußsäure (DHF) durch Ausdampfen von H20 verändert, insbesondere erhöht. Ferner ist es möglich, daß in der Umgebung des Behandlungsbeckens befindliche Fremdstoffe mit dem Behandlungsfluid in Kontakt kommen und eine Veränderung der Fluideigenschaften bewirken. Für eine gleichmäßige Behandlung von Wafern, welche die nachfolgende Qualität bestimmt, ist es jedoch notwendig, während der Standzeit des Beckens oder der Lebenszeit der Beckenfüllung ein Fluid mit gleichbleibenden Eigenschaf- ten vorzusehen. Durch Ausdiffundieren von Molekülen oder Lösen von Fremdstoffen in dem Fluid ist dies nicht gewährleistet. Aus der DE-A-4232925 ist ein Verfahren zur Herstellung von 3-,8- substituierten Deuteroporphyrinderivaten bekannt, bei dem während der Herstellung Vorläuferprodukte der Derivate während ihrer Herstellung mit Stickstoff überschichtet werden, um einer Oxidation der Vorläuferprodukte zu ver- meiden.During the treatment of the semiconductor wafers in the treatment fluid, it is possible that a concentration of the treatment fluid, e.g. B. the concentration of dilute hydrofluoric acid (DHF) changed by evaporation of H 2 0, in particular increased. It is also possible that foreign substances in the vicinity of the treatment basin come into contact with the treatment fluid and cause a change in the fluid properties. However, for a uniform treatment of wafers, which determines the subsequent quality, it is necessary to provide a fluid with constant properties during the service life of the pool or the lifetime of the pool filling. This is not guaranteed by the diffusion of molecules or the dissolving of foreign substances in the fluid. DE-A-4232925 discloses a process for the preparation of 3-, 8-substituted deuteroporphyrin derivatives in which precursor products of the derivatives are overlaid with nitrogen during their production in order to avoid oxidation of the precursor products.
Ausgehend von der bekannten Vorrichtung und dem bekannten Verfahren liegt der vorliegenden Erfindung daher die Aufgabe zugrunde, die Eigenschaften des Behandlungsfluids während der Behandlung möglichst konstant zu halten.Starting from the known device and the known method, the present invention is therefore based on the object of keeping the properties of the treatment fluid as constant as possible during the treatment.
Erfindungsgemäß wird diese Aufgabe bei einem Verfahren zum Behandeln Halbleitersubstraten, in einem mit Behandlungsfluid gefüllten Behandlungsbecken dadurch gelöst, daß während der Behandlung eine einen Austausch von Molekülen und/oder Fremdstoffen zwischen dem Behandlungsfluid und der Umgebung unterdrückende Gasschicht über dem Behandlungsfluid erzeugt wird. Die Gasschicht über dem Behandlungsfluid führt dazu, daß eine Dampfphase zwischen Behandlungsfluid und Gasschicht im Gleichgewicht gehalten wird, wodurch ein Ausdiffundieren von Molekülen unterdrückt wird. Ferner wird verhindert, daß aus der Umgebung des Behandlungsbeckens Fremdstoffe mit dem Behandlungsfluid in Kontakt kommen und sich darin lösen.According to the invention, this object is achieved in a method for treating semiconductor substrates in a treatment tank filled with treatment fluid in that a gas layer which suppresses an exchange of molecules and / or foreign substances between the treatment fluid and the environment is generated above the treatment fluid during the treatment. The gas layer above the treatment fluid leads to a vapor phase between the treatment fluid and the gas layer being kept in equilibrium, as a result of which a diffusion of molecules is suppressed. Furthermore, foreign substances from the area surrounding the treatment basin are prevented from coming into contact with the treatment fluid and dissolving therein.
Vorzugsweise wird die Gasschicht durch eine im wesentlichen parallel zur Behandlungsfluidoberfläche gerichtete Gasströmung erzeugt, wodurch ein sich ständig erneuernder Gasteppich über dem Behandlungsfluid vorgesehen wird, der den oben beschriebenen Molekülaustausch unterdrückt.Preferably, the gas layer is generated by a gas flow directed essentially parallel to the treatment fluid surface, whereby a continuously renewing gas carpet is provided over the treatment fluid, which suppresses the above-described molecular exchange.
Vorzugsweise enthält die Gasschicht wenigstens ein inertes Gas, insbesonde- re N2, das kostengünstig ist, und sich selbst nicht in dem Behandlungsfluid löst und eine Veränderung der Eigenschaften des Behandlungsfluids hervorruft. Natürlich ist es auch möglich, andere Gase bzw. Kombinationen von Gasen vorzusehen. Die der Erfindung zugrundeliegende Aufgabe wird bei einer Vorrichtung zum Behandeln von Halbleitersubstraten, mit einem mit Behandlungsfluid gefüllten Behandlungsbecken dadurch gelöst, daß eine Gas-Einbringeinrichtung zum Erzeugen einer einen Austausch von Molekülen und/oder Fremdstoffen zwischen dem Behandlungsfluid und der Umgebung unterdrückende Gasschicht über dem Behandlungsfluid während des Behandlungsvorgangs vorgesehen ist. Hierdurch wird die Erzeugung einer Gasschicht ermöglicht, wodurch sich die schon oben genannten Vorteile ergeben.The gas layer preferably contains at least one inert gas, in particular N 2 , which is inexpensive and does not dissolve itself in the treatment fluid and causes a change in the properties of the treatment fluid. Of course, it is also possible to provide other gases or combinations of gases. The object on which the invention is based is achieved in a device for treating semiconductor substrates, with a treatment tank filled with treatment fluid, in that a gas introduction device for generating a gas layer above the treatment fluid that suppresses an exchange of molecules and / or foreign substances between the treatment fluid and the environment is provided during the treatment process. This enables the generation of a gas layer, which results in the advantages already mentioned above.
Vorzugsweise weist die Gas-Einbringeinrichtung wenigstens eine im wesentlichen parallel zur Behandlungsfluidoberfläche gerichtete Düse auf, um einen sich parallel zur Behandlungsfluidoberfläche erstreckenden Gas-Teppich zu erzeugen. Vorzugsweise weist die Gas-Einbringeinrichtung einen der Um- fangsform des Behandlungsbeckens angepaßten Ringkanal mit einer Vielzahl von nach innen gerichteten Düsen auf, um einen gleichmäßigen Gas-Teppich zu erzeugen. Dabei enthält die Gasschicht vorzugsweise ein inertes Gas, insbesondere N2.The gas introduction device preferably has at least one nozzle which is directed essentially parallel to the treatment fluid surface in order to produce a gas carpet which extends parallel to the treatment fluid surface. The gas introduction device preferably has an annular channel which is adapted to the circumferential shape of the treatment basin and has a plurality of inwardly directed nozzles in order to produce a uniform gas carpet. The gas layer preferably contains an inert gas, in particular N 2 .
Die Erfindung wird nachfolgend anhand eines bevorzugten Ausführungsbeispiels unter Bezugnahme auf die Zeichnung näher erläutert; in der Zeichnung zeigt:The invention is explained in more detail below on the basis of a preferred exemplary embodiment with reference to the drawing; in the drawing shows:
Fig. 1 eine schematische, perspektivische Darstellung der erfindungsgemäßen Vorrichtung zur Behandlung von Substraten;Figure 1 is a schematic, perspective view of the device for treating substrates according to the invention.
Fig. 2 eine schematische Schnittdarstellung durch die er indungsgemäße Vorrichtung; Fig. 3 eine schematische Draufsicht auf die erfindungsgemäße Vorrichtung.2 shows a schematic sectional illustration through the device according to the invention; Fig. 3 is a schematic plan view of the device according to the invention.
Die Figuren 1 bis 3 zeigen eine Vorrichtung 1 zur Naßbehandlung von Halb- leiterwafem, mit einem Behandlungsbecken 3, der über einen Diffusor 5 mit Behandlungsfluid 6 befüllbar ist. Im Boden des Behandlungsbeckens 3 ist ein Ablaß 8 vorgesehen, um die Behandlungsflüssigkeit nach einer Behandlung abzulassen. Das Behandlungsbecken 3 ist von einem Überlauf 10 umgeben, der einen Ablaß 11 aufweist.FIGS. 1 to 3 show a device 1 for the wet treatment of semiconductor wafers, with a treatment basin 3, which can be filled with treatment fluid 6 via a diffuser 5. In the bottom of the treatment basin 3, a drain 8 is provided for the treatment liquid after a treatment drain. The treatment basin 3 is surrounded by an overflow 10 which has an outlet 11.
Oberhalb des Behandlungsbeckens ist eine der Umfangsform des Behandlungsbeckens angepaßte Ringleitung 14 vorgesehen, die eine Vielzahl von nach innen weisenden, parallel zu einer Oberfläche des Behandlungsfluids 6 gerichtete Auslaßöffnungen 16 aufweist. Die Ringleitung 14 ist in geeigneter Weise mit einer Versorgungsleitung 18 verbunden, die ihrerseits mit einer Stickstoffversorgung verbunden ist.Above the treatment basin, a ring line 14 is provided which is adapted to the circumferential shape of the treatment basin and which has a multiplicity of outlet openings 16 pointing inwards and directed parallel to a surface of the treatment fluid 6. The ring line 14 is connected in a suitable manner to a supply line 18, which in turn is connected to a nitrogen supply.
Zur Behandlung der Halbleiterwafer werden diese über eine geeignete Vorrichtung in das Behandlungsbecken 3 eingesetzt, das eine geeignete, nicht dargestellte Haltevorrichtung für die Wafer aufweist. Anschließend wird das Behandlungsbecken 3 über den Diffusor 5 mit einer Behandlungsflüssigkeit 6 wie beispielsweise verdünnter Flußsäure (DHF) so durchströmt, daß die Behandlungsflüssigkeit über einen oberen Rand des Behandlungsbeckens 3 in den Überlauf 10 strömt. Während des Einleitens der Behandlungsflüssigkeit 6 wird Stickstoff über die Versorgungsleitung 18 in die Ringleitung 14 eingeleitet. Durch die Auslaßöffnungen 16 tritt der Stickstoff aus der Ringleitung 14 aus, wie durch die Pfeile A in den Figuren 2 und 3 dargestellt ist. Die Gaszufuhr wird dabei so gesteuert, daß das Gas mit einer Geschwindigkeit von zirka 10 Metern pro Sekunde aus den Öffnungen 16 austritt. Hierdurch wird eine geschlossene N2-Schicht über der Oberfläche des Behandlungsfluids gebildet. Ein über der Oberfläche des Behandlungsfluids 6 befindliche Dampfphase wird aufgrund der N2-Schicht von der Umgebung abgegrenzt.For the treatment of the semiconductor wafers, these are inserted into the treatment basin 3 via a suitable device, which has a suitable holding device, not shown, for the wafers. The treatment tank 3 is then flowed through the diffuser 5 with a treatment liquid 6 such as, for example, dilute hydrofluoric acid (DHF), in such a way that the treatment liquid flows into the overflow 10 via an upper edge of the treatment tank 3. During the introduction of the treatment liquid 6, nitrogen is introduced into the ring line 14 via the supply line 18. The nitrogen emerges from the ring line 14 through the outlet openings 16, as shown by the arrows A in FIGS. 2 and 3. The gas supply is controlled so that the gas emerges from the openings 16 at a speed of approximately 10 meters per second. This forms a closed N 2 layer over the surface of the treatment fluid. A vapor phase located above the surface of the treatment fluid 6 is delimited from the environment due to the N 2 layer.
Die Erfindung wurde zuvor anhand eines bevorzugten Ausführungsbeispiels der Erfindung beschrieben, ohne jedoch auf dieses speziell dargestellte Ausführungsbeispiel beschränkt zu sein. Insbesondere können statt N2 andere Gase, insbesondere inerte Gase oder Kombinationen unterschiedlicher Gase verwendet werden. Auch ist es nicht notwendig, eine Ringleitung zur Erzeugung einer Gasschicht vorzusehen, vielmehr könnte nur von einer Seite des Behandlungsbeckens her eine Gasschicht erzeugt werden. Auch können un- terschiedliche Ausströmgeschwindigkeiteπ des Gases aus der Ringleitung 14 vorgesehen werden. Die Gasschicht kann statt parallel zur Behandlungsfluidoberfläche auch dachförmig ausgebildet sein. The invention was previously described with reference to a preferred embodiment of the invention, but without being limited to this specifically illustrated embodiment. In particular, other gases, in particular inert gases or combinations of different gases, can be used instead of N 2 . It is also not necessary to provide a ring line for generating a gas layer, rather a gas layer could only be generated from one side of the treatment basin. Can also Different outflow velocities of the gas from the ring line 14 can be provided. The gas layer can also be roof-shaped instead of parallel to the treatment fluid surface.
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19961533.0 | 1999-12-20 | ||
| DE19961533A DE19961533A1 (en) | 1999-12-20 | 1999-12-20 | Device and method for treating substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2001046994A1 true WO2001046994A1 (en) | 2001-06-28 |
Family
ID=7933466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2000/012139 Ceased WO2001046994A1 (en) | 1999-12-20 | 2000-12-02 | Device and method for treating substrates |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE19961533A1 (en) |
| WO (1) | WO2001046994A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0370134A (en) * | 1989-08-09 | 1991-03-26 | Fujitsu Ltd | Solvent vapor driver and drying method |
| US5362274A (en) * | 1989-11-14 | 1994-11-08 | Aigo Seiichiro | Blowing port for clean air of an apparatus for washing semiconductor materials |
| JPH10144651A (en) * | 1996-11-07 | 1998-05-29 | Dainippon Screen Mfg Co Ltd | Rotary substrate drying equipment |
| US5938943A (en) * | 1995-07-28 | 1999-08-17 | Applied Materials, Inc. | Near Substrate reactant Homogenization apparatus |
| US5996242A (en) * | 1997-04-04 | 1999-12-07 | Ryoden Semiconductor System Engineering Corporation | Drying apparatus and method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8925802D0 (en) * | 1989-11-15 | 1990-01-04 | Wiggins Teape Group Ltd | Record material |
| DE4232925A1 (en) * | 1992-09-28 | 1994-03-31 | Diagnostikforschung Inst | 3-, 8-substituted deuteroporphyrin derivatives, pharmaceutical compositions containing them and process for their preparation |
-
1999
- 1999-12-20 DE DE19961533A patent/DE19961533A1/en not_active Withdrawn
-
2000
- 2000-12-02 WO PCT/EP2000/012139 patent/WO2001046994A1/en not_active Ceased
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0370134A (en) * | 1989-08-09 | 1991-03-26 | Fujitsu Ltd | Solvent vapor driver and drying method |
| US5362274A (en) * | 1989-11-14 | 1994-11-08 | Aigo Seiichiro | Blowing port for clean air of an apparatus for washing semiconductor materials |
| US5938943A (en) * | 1995-07-28 | 1999-08-17 | Applied Materials, Inc. | Near Substrate reactant Homogenization apparatus |
| JPH10144651A (en) * | 1996-11-07 | 1998-05-29 | Dainippon Screen Mfg Co Ltd | Rotary substrate drying equipment |
| US6067727A (en) * | 1996-11-07 | 2000-05-30 | Dainippon Screen Mfg. Co., Ltd. | Apparatus and method for drying substrates |
| US5996242A (en) * | 1997-04-04 | 1999-12-07 | Ryoden Semiconductor System Engineering Corporation | Drying apparatus and method |
Non-Patent Citations (2)
| Title |
|---|
| PATENT ABSTRACTS OF JAPAN vol. 015, no. 233 (E - 1077) 14 June 1991 (1991-06-14) * |
| PATENT ABSTRACTS OF JAPAN vol. 1998, no. 10 31 August 1998 (1998-08-31) * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19961533A1 (en) | 2002-03-28 |
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