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WO2001031700A1 - Porte-plaquette et dispositif de croissance epitaxiale - Google Patents

Porte-plaquette et dispositif de croissance epitaxiale Download PDF

Info

Publication number
WO2001031700A1
WO2001031700A1 PCT/JP2000/007558 JP0007558W WO0131700A1 WO 2001031700 A1 WO2001031700 A1 WO 2001031700A1 JP 0007558 W JP0007558 W JP 0007558W WO 0131700 A1 WO0131700 A1 WO 0131700A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
support
supporting
hole
wafer
Prior art date
Application number
PCT/JP2000/007558
Other languages
English (en)
Japanese (ja)
Inventor
Youji Takagi
Masahiko Hirakawa
Original Assignee
Applied Materials Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc. filed Critical Applied Materials Inc.
Publication of WO2001031700A1 publication Critical patent/WO2001031700A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Definitions

  • the present invention relates to a substrate support device for supporting a substrate to be processed and an epitaxial growth device.
  • the substrate supporting apparatus 100 includes a susceptor (support table) 101 provided with a pocket 101a for supporting the substrate W.
  • a plurality of (for example, three) holes 101b penetrating vertically are formed, and a lift bin 102 is provided in each hole 101b. Hanged.
  • These lift pins 102 are lifted with respect to the susceptor 101 by a pin lift mechanism 103.
  • each lift pin 102 is moved by the pin lift mechanism 103. Is raised (two-dot chain line in FIG. 7), and the wafer W placed on the blade of the transfer robot is pushed up. After that, the blade is pulled out, each lift pin 102 is lowered by the pin lift mechanism 103 (solid line in FIG. 7), and the wafer W supported on the upper surface of the lift pin 102 is placed in the pocket 101 a. Place on.
  • the above-described substrate support device 100 uses the lift pins 102
  • An object of the present invention is to provide a substrate support device and an epitaxy growth device that can prevent a horizontal displacement of a substrate.
  • a substrate support device of the present invention is provided in a processing chamber, the support having a concave substrate support portion for supporting a substrate and a plurality of through holes provided in a portion including a peripheral portion of the substrate support portion.
  • a plurality of support members fitted into each through hole and having a notch for supporting the substrate for supporting an edge portion of the substrate; and a plurality of engagement portions engaging with a lower surface of each support member.
  • Lift means for lifting the support member with respect to the support base.
  • a plurality of support members when supporting the substrate conveyed into the processing chamber on the support, first, a plurality of support members are fitted into each through hole of the support, and then the lift is lifted.
  • the plurality of supporting members are raised by means, and the edge of the substrate is pushed up and supported by the substrate supporting notch of each supporting member.
  • the plurality of support members are lowered from the state by the lift means, and each support member is fitted into each through hole of the support base.
  • the substrate is supported by the substrate supporting portion of the support base and the substrate supporting notch of each supporting member.
  • the substrate supporting notch is composed of a bottom surface and a side surface
  • the substrate is Even if the substrate shifts in the horizontal direction, the edge of the substrate hits the side surface of the notch for supporting the substrate. Therefore, the substrate is prevented from being displaced.
  • the support member is formed of the same material as the support base.
  • each support member supports the substrate support device.
  • the film supported by the support table and the substrate supported by each support member is heated by heating lamps and the like arranged above and below the support table.
  • heat from a heating lamp or the like disposed below the support base will be transmitted substantially uniformly over the entire substrate, so that the surface of the substrate This improves the uniformity of the film thickness distribution of the thin film formed on the substrate.
  • a pin is provided on one of the lower surface portion of the support member and the upper surface portion of the engagement portion, and a hole portion in which the pin is fitted is formed on the other. Accordingly, when the plurality of support members are moved up and down by the lift means, the support members hardly shift in the horizontal direction with respect to the engagement portions, and the support members move up and down stably.
  • the through hole has a tapered surface tapering downward
  • the support member has a tapered surface formed corresponding to a tapered surface of the through hole.
  • the substrate supporting notch has a bottom surface and a side surface, and the bottom surface and the side surface are a bottom surface forming the substrate supporting portion and a side surface forming the substrate supporting portion when the supporting member is fitted into the through hole. It is constituted so that it may become almost flush.
  • An epitaxy growth apparatus includes a processing chamber, a substrate supporting device disposed in the processing chamber, and supporting a substrate to be processed, and a substrate disposed above and below the processing chamber and supported by the substrate supporting device.
  • Heating means for heating the substrate comprising: a support base having a concave substrate support portion for supporting the substrate; and a plurality of through holes provided in a portion including a peripheral portion of the substrate support portion. And a plurality of supporting members fitted into each through hole and having a substrate supporting notch for supporting an edge of the substrate, and a plurality of engaging portions engaging with a lower surface of each supporting member.
  • a lift means for lifting each support member with respect to the support base is provided.
  • FIG. 1 is a diagram schematically showing an epitaxial growth apparatus provided with an embodiment of a substrate supporting apparatus according to the present invention.
  • c Figure 3 is a vertical sectional view showing an embodiment of a substrate support apparatus according to the present invention is a plan view showing the evening susceptor shown in FIG.
  • FIG. 4 is an enlarged view showing the through hole shown in FIG.
  • FIG. 5 is an enlarged view showing the vicinity of the upper end of the support member and the lift mechanism shown in FIG. 2c .
  • FIG. 6A is a view showing a state when a wafer is placed on the susceptor shown in FIG.
  • FIG. 6B is a diagram showing a state when a wafer is placed on the susceptor shown in FIG.
  • FIG. 7 is a vertical sectional view showing an example of a conventional substrate supporting device.
  • FIG. 1 schematically shows an epitaxy growth apparatus provided with an embodiment of the substrate support apparatus according to the present invention.
  • an epitaxial growth apparatus 1 is of a single wafer type in which a silicon wafer W as a substrate is subjected to a film forming process one by one.
  • the epitaxial growth apparatus 1 includes a processing chamber 2 made of, for example, quartz glass, a frame 3 that accommodates the processing chamber 2, and a lid 4 that covers the processing chamber 2 from above.
  • a gas supply port 5 and a gas exhaust port 6 are provided to face each other.
  • a substrate support device 7 for horizontally supporting only one wafer W is disposed.
  • a plurality of infrared lamps 8 for heating the wafer W are radially arranged at a lower part in the frame 3 and an upper part in the lid 4. Inside the infrared lamps 8, cylindrical shield members 9 are provided. Further, the lid 4 is provided with a pyrometer 10 for measuring the surface temperature of the wafer W.
  • a transfer robot loads a wafer W into the processing chamber 2 which is in a reduced pressure or a normal pressure state.
  • the supporting device 7 supports the wafer W.
  • trichlorosilane S i HC l 3
  • Gasuya dichlorosilane S i H 2 C 1 2
  • the reaction gas flows in a laminar flow state along the surface of the wafer W, and a single crystal of silicon is epitaxially grown on the surface of the wafer W to form a thin film.
  • a substrate support device 7 is made of a carbon graphite material coated with silicon carbide (SiC), and has a disk-shaped susceptor (support base) 11 for supporting the wafer W. I have.
  • the susceptor 11 is horizontally supported at three points from the back side by a quartz glass susceptor support member 12 erected below the processing chamber 2.
  • a concave substrate support 13 called a pocket on which the wafer W is placed is formed.
  • the substrate support 13 has a slightly larger dimension than the wafer W. As shown in FIG.
  • the susceptor 11 is provided with a plurality of (five in this case) through holes 14 formed in the periphery of the substrate support portion 13 and penetrating vertically. You. Preferably, the number of the through holes 14 is three or more. As shown in FIG. 4, the through-hole 14 has a rectangular cross section in the horizontal direction, and has a tapered surface 14a that tapers downward.
  • a support member 15 made of silicon carbide (SiC) is fitted into such a through hole 14.
  • a notch 16 for supporting the substrate on which the edge portion of the wafer W is placed is provided on the inner upper surface (on the side of the concave portion 13 for supporting the substrate) of the supporting member 15 as shown in FIGS. Is formed.
  • the notch 16 for supporting the substrate includes a bottom surface and side surfaces. Further, on the lower surface of the support member 15, a taper-shaped bottle 17 tapering downward is provided.
  • the support member 15 has a taper surface 15 a corresponding to the tapered portion 14 a of the through hole 14, and when the support member 15 is fitted into the through hole 14. Further, almost no gap is formed between the support member 15 and the through hole 14. to this Accordingly, during the film forming process on the wafer W, the reaction gas flowing over the susceptor 11 hardly goes under the susceptor 11. Further, the radiant heat from the infrared lamp 8 below the susceptor 11 is hardly directly radiated to the wafer W, thereby preventing the wafer W from slipping.
  • the bottom surface forming the substrate support portion 13 and the bottom surface forming the notch portion 16 for substrate support are substantially flush with each other.
  • the side surface forming the third and the side surface forming the substrate supporting notch 16 are also configured to be substantially flush.
  • Such a support member 15 can be lifted with respect to the susceptor 11 by the lift mechanism 18.
  • the lift mechanism 18 is arranged so as to surround the support shaft 12 a of the susceptor support member 12, and can be moved up and down by a vertical drive mechanism (not shown). It has five lift arms 20 that extend radially and are bent upward from the middle.
  • a tapered hole 21 into which the pin 17 of the support member 15 is fitted is provided at the tip of each lift arm 20.
  • the tip of the lift arm 20 including the hole 21 forms an engagement portion that engages with the lower surface of the support member 15.
  • the transfer robot (not shown) is operated, and the wafer W placed on the blade of the transfer robot is operated. Is moved to a position directly above the susceptor 11.
  • the lift mechanism 18 is raised by a vertical drive mechanism (not shown).
  • the pin 17 of the support member 15 is fitted into the hole 21 at the tip of the lift arm 20, and the support member 15 is lifted. Since the supporting member 15 rises in the state where the pin 17 is fitted into the hole 21 as described above, the supporting member 15 hardly shifts in the horizontal direction with respect to the lift arm 20. 5 rises steadily.
  • the blade of the transport robot is evacuated from above the susceptor 11.
  • the lift mechanism 18 is lowered by the vertical drive mechanism (not shown). Then, each support member 15 supporting the edge portion of the wafer W at the substrate support notch 16 descends and fits into each through-hole 14, and the wafer W supports the substrate at the susceptor 11. It is lowered onto part 13 (see Fig. 6 (b)).
  • the wafer W when the wafer W is supported by the support member 15, only the edge portion of the wafer W is supported by the substrate support notch 16, so that the wafer W may be supported by the support member 15 for some reason. Even if the wafer W is displaced in the horizontal direction, the edge of the wafer W hits the side surface forming a part of the substrate supporting notch 16. For this reason, the wafer W does not shift, and the wafer W reliably fits in the substrate support portion 13.
  • the wafer W when the wafer W is transported in the up and down direction in the processing chamber 2, the wafer W is supported by the substrate supporting notch 16 of the support member 15 to support the edge of the wafer. This prevents the wafer W from being displaced in the horizontal direction.
  • the material of the support member 15 is the same as that of the susceptor 11. i (Because of the loneliness, the heat from the heating lamp 8 is transmitted almost uniformly over the entire surface of the wafer W via the susceptor 11 and the supporting member 15. The uniformity of the film thickness distribution of the formed thin film is improved.
  • the preferred embodiments of the present invention have been described, but it goes without saying that the present invention is not limited to the above embodiments.
  • the support member 15 is formed of the same material (SiC) as the susceptor 11, but the material of the support member 15 is not particularly limited and may be an opaque material having heat resistance.
  • a pin 17 is provided on the lower surface of the support member 15 and a hole 21 is formed at the upper end of the lift arm 20 into which the pin 17 is fitted. A hole into which the pin is fitted may be formed in the member.
  • an epitaxy growth apparatus which is one of the semiconductor manufacturing apparatuses, has been described.
  • the present invention is not limited to the epitaxy growth apparatus. It is applicable to the device of.
  • the substrate when the substrate is transported in the vertical direction in the processing chamber, it is performed while the edge of the substrate is supported by the notch for supporting the substrate of the support member, so that the substrate is displaced in the horizontal direction. It is prevented from happening. Thus, it is possible to prevent the substrate from being placed on the support table while protruding from the concave substrate support portion.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un porte-plaquette comprenant un suscepteur en SiC qui permet de tenir une plaquette unique horizontalement. Une partie de maintien en forme de cavité est formée sur une zone supérieure du suscepteur. Cinq trous sont pratiqués dans le suscepteur autour de la partie de maintien. Un support en Sic est introduit dans chacun de ces trous. Chaque support comporte un sommet, dont l'intérieur (vers la partie de maintien) comporte une encoche destinée à être enclenchée avec la bordure de la plaquette. Les différents supports sont élevés par rapport au suscepteur au moyen d'un mécanisme élévateur. Lorsqu'une plaquette est placée sur le suscepteur, la bordure de la plaquette s'enclenche dans les encoches des supports, ce qui empêche la plaquette de dévier horizontalement.
PCT/JP2000/007558 1999-10-27 2000-10-27 Porte-plaquette et dispositif de croissance epitaxiale WO2001031700A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11/305650 1999-10-27
JP30565099A JP2001127143A (ja) 1999-10-27 1999-10-27 基板支持装置

Publications (1)

Publication Number Publication Date
WO2001031700A1 true WO2001031700A1 (fr) 2001-05-03

Family

ID=17947697

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/007558 WO2001031700A1 (fr) 1999-10-27 2000-10-27 Porte-plaquette et dispositif de croissance epitaxiale

Country Status (3)

Country Link
JP (1) JP2001127143A (fr)
TW (1) TW476098B (fr)
WO (1) WO2001031700A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011011954A1 (fr) * 2009-07-29 2011-02-03 东莞宏威数码机械有限公司 Appareil à ensembles de goupilles de soutien emboîtées

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007042845A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd サセプタ及び気相成長装置
JP4575262B2 (ja) * 2005-09-22 2010-11-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 ウェーハ支持構造及びウェーハ製造装置
KR100861090B1 (ko) * 2007-07-09 2008-09-30 세메스 주식회사 열처리 장치
JP2010239020A (ja) * 2009-03-31 2010-10-21 Bridgestone Corp 半導体装置用ウエハホルダ
JP5071437B2 (ja) * 2009-05-18 2012-11-14 パナソニック株式会社 プラズマ処理装置及びプラズマ処理装置におけるトレイの載置方法
JP7035996B2 (ja) 2018-12-25 2022-03-15 株式会社Sumco 気相成長装置およびエピタキシャルシリコンウェーハの製造方法
CN113832449B (zh) * 2020-06-24 2023-10-20 拓荆科技股份有限公司 半导体薄膜的沉积设备和沉积方法
CN114530361B (zh) * 2020-11-23 2024-08-06 中微半导体设备(上海)股份有限公司 下电极组件、等离子体处理装置和更换聚焦环的方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
US5098198A (en) * 1990-04-19 1992-03-24 Applied Materials, Inc. Wafer heating and monitor module and method of operation
JPH05343506A (ja) * 1992-06-11 1993-12-24 Toshiba Ceramics Co Ltd ウェーハ用チャック
JPH08181150A (ja) * 1994-12-26 1996-07-12 Touyoko Kagaku Kk 基板加熱処理方法
US5683518A (en) * 1993-01-21 1997-11-04 Moore Epitaxial, Inc. Rapid thermal processing apparatus for processing semiconductor wafers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098198A (en) * 1990-04-19 1992-03-24 Applied Materials, Inc. Wafer heating and monitor module and method of operation
JPH05343506A (ja) * 1992-06-11 1993-12-24 Toshiba Ceramics Co Ltd ウェーハ用チャック
US5683518A (en) * 1993-01-21 1997-11-04 Moore Epitaxial, Inc. Rapid thermal processing apparatus for processing semiconductor wafers
JPH08181150A (ja) * 1994-12-26 1996-07-12 Touyoko Kagaku Kk 基板加熱処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011011954A1 (fr) * 2009-07-29 2011-02-03 东莞宏威数码机械有限公司 Appareil à ensembles de goupilles de soutien emboîtées

Also Published As

Publication number Publication date
TW476098B (en) 2002-02-11
JP2001127143A (ja) 2001-05-11

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