WO2000038014A1

WO2000038014A1 - Photo mask production method and device thereof

Info

Publication number: WO2000038014A1
Application number: PCT/JP1999/006962
Authority: WO
Inventors: Naomasa Shiraishi
Original assignee: Nikon Corporation
Priority date: 1998-12-18
Filing date: 1999-12-10
Publication date: 2000-06-29
Also published as: AU1684200A

Abstract

A photo mask production method capable of producing in short time and at low costs a photo mask on which a correction is made for a pattern deformation produced by an optical proximity effect when transferring a mask pattern. Partial master patterns (Pi (i= 1 to N)) formed by dividing into N segments a master pattern obtained by magnifying at a specified magnification a circuit pattern to be formed on a wafer (W) are respectively drawn on a substrate to prepare master reticles (Ri (i= 1 to N)), and reduction images (PWi) 1/β times as large as the partial master patterns (Pi) of the master reticles (Ri) are transferred onto a substrate (26) while image fields are joined one by one to produce a working reticle (WR). An illuminating condition required in transferring partial master pattern images of the master reticles (Ri) onto the substrate (26) is set so as to offset changes in projection images to be produced by an optical proximity effect when the mask pattern of the working reticle (WR) is transferred onto the wafer (W).

Description

Description Photomask manufacturing method and apparatus

The present invention relates to a method for manufacturing a photomask used when manufacturing a microdevice such as a semiconductor integrated circuit, an image sensor (CCD or the like), a liquid crystal display, or a thin-film magnetic head using a lithography technique. And equipment. Background art

When manufacturing a device such as a semiconductor integrated circuit, an image of the mask pattern is formed using a photomask on which a mask pattern (original pattern) in which a circuit pattern to be formed is enlarged, for example, about 4 to 5 times is formed. A transfer method is used in which the light is projected onto a substrate to be exposed such as a wafer via a reduction projection optical system. An exposure apparatus is used for transferring a photomask pattern, and a photomask used in a step-and-repeat type reduction projection exposure apparatus is also called a reticle. . Conventionally, such a reticle is formed by forming a light-shielding film on a predetermined substrate (blanks) and applying a resist, and then drawing and developing a predetermined pattern using an electron beam lithography apparatus or a laser beam lithography apparatus. In this case, the resist is patterned, and the light-shielding film is etched using the remaining resist pattern as a mask. Recently, when transferring a reticle mask pattern (reticle pattern) onto a wafer, the illumination optical system of the reduced projection exposure apparatus includes a coherence factor (σ) in order to increase the resolution of the reduced projection optical system. Value) large lighting Conditions may be set, or modified illumination such as annular illumination may be used.

Furthermore, even if the resolution at the time of the reduced projection is increased, the line width accuracy or the like higher than the accuracy of the original reticle pattern cannot be obtained. It is required to be formed on a substrate with uniform width and high positional accuracy.

As described above, conventionally, there has been a demand for increasing the resolution at the time of reduced projection and increasing the accuracy of the pattern of the reticle (working reticle) itself. In this regard, the resolution R at the time of reduced projection is generally defined by the following equation, where the exposure wavelength is taken and the numerical aperture of the projection optical system is NA.

R = k · λ / N A (1)

Here, k is a process coefficient. The value of the process coefficient k has been about 0.6 in the past, but has recently become about 0.5, and is expected to be further reduced to about 0.4. This is largely due to advances in the photosensitive material (photoresist) applied on the wafer, but in principle, more severe conditions are imposed on the resolution (= λ Ζ Ν Α) specified by the diffraction limit. This is nothing less than the need for exposure transfer.

However, when the resolution R becomes smaller as described above, the density of the pattern transferred onto the wafer increases, and the density of the reticle pattern also increases. As a result, the fidelity of the pattern transferred on the wafer to the reticle pattern is reduced mainly due to the optical proximity effect, and the pattern transferred on the wafer and the reticle pattern are reduced in design by a predetermined factor. There is a problem in that there is a difference between the patterns. That is, for a pattern that is finer than a certain level (narrow line width), the pattern is transferred to the line width of the reticle pattern and the wafer depending on whether or not another pattern exists near the pattern on the reticle. Putter The proportional relationship between the line width of the pattern and the line width of the pattern to be transferred is broken, and the line width of the pattern transferred onto the wafer fluctuates.

In addition, when the coherence factor (σ value) is increased to improve the resolution, or when deformed illumination such as annular illumination is used, the effect of the optical proximity effect is further increased, and the pattern transferred onto the wafer is increased. Fidelity is further exacerbated.

In order to correct the pattern deformation due to the optical proximity effect, the line width of the pattern on the reticle is changed depending on the presence or absence of another pattern near the pattern, so-called 〇 PC (Opti cal Proximity Correc). tion) processing is also used. However, since this OPC process corrects all reticle patterns having a large amount of de-duration by judging the presence or absence of other patterns near each pattern, the time required for the process is enormous. However, there is a disadvantage that the data processing cost is high. In addition, the data amount of the reticle pattern after the PC processing is several times larger than the design data before the PC processing. For example, when the reticle pattern is drawn on a predetermined substrate by an electron beam drawing apparatus. Since the time is increased several times, there is an inconvenience that the production cost of reticle is greatly increased.

In view of the above, the present invention provides a photomask manufacturing method capable of manufacturing a photomask corrected for the light proximity effect generated when transferring a mask pattern in a short time and at low cost. Is the primary purpose.

In addition, the present invention provides a photomask manufacturing apparatus capable of performing such a photomask manufacturing method, and a photomask manufactured using such a photomask manufacturing method. Aim. Further, the present invention provides a method for manufacturing a device using such a method for manufacturing a photomask, and a highly functional device manufactured using such a method for manufacturing a device. The third purpose is to provide devices. Disclosure of the invention

A first method for manufacturing a photomask according to the present invention is a method for manufacturing a photomask (WR) on which a pattern to be transferred via a projection optical system (33) is formed under predetermined first conditions. Then, a master mask (MR) is created by drawing a pattern of the enlarged parent pattern on the first substrate (40), and the second mask set according to the first condition is created. Under the conditions, the master pattern of the master mask is transferred onto the second substrate (26) via the reduction projection optical system (6) to produce the photomask.

According to the present invention, under the first conditions (illumination conditions, imaging conditions, photoresist characteristics, exposure dose, etc.), for example, the line width of a pattern transferred by the optical proximity effect Change. As an example, the optical proximity effect under the first condition can be used to reduce the line width of the part of the photomask pattern where no other pattern exists (isolated part) in the vicinity. When it works, the second condition is set so that the optical proximity effect generated under the second condition works in a direction to increase the line width of the isolated portion. Therefore, a pattern in which the line width of the isolated portion is thickened is formed on the second substrate, and the line width change due to the optical proximity effect that occurs when this pattern is transferred under the first condition. Is previously offset or reduced by a change in line width due to the optical proximity effect that occurs under the second condition. That is, the pattern formed on the second substrate has been corrected for the optical proximity effect under the first condition.

Also, when transferring the parent patterns of the mass evening first mask on the second substrate, for example, an optical projection exposure apparatus such as a stepper is used _c Therefore, the correction for the optical proximity effect that occurs under the first condition can be collectively optically performed on the entire parent pattern. Therefore, the time required for the correction process is much longer than when the correction process is performed for each pattern that constitutes the photomask on a design basis, such as when using an electron beam lithography system. Is shortened to Further, according to the present invention, when the parent pattern is drawn on the mask, for example, an electron beam drawing apparatus is used. At this time, since the parent pattern is an enlarged pattern of the pattern of the photomask, in practice, a pattern obtained by dividing the parent pattern is drawn on a plurality of master masks. However, at this time, the drawing time for each mask and mask is small because the amount of drawing data for each mask and mask is small and the amount of data for each mask is not increased by the correction process. Become.

Further, since the writing error is reduced by the reduction ratio of the mask, the pattern of the photomask can be formed with substantially higher accuracy without increasing the writing accuracy as compared with the conventional case. Further, when manufacturing a plurality of photomasks, the pattern of the master-mask may be simply transferred repeatedly. As described above, a photomask corrected for the optical proximity effect generated under the first condition can be manufactured in a short time, with high accuracy, and at low cost.

Next, a second photomask manufacturing method according to the present invention includes a photomask (WR) on which a pattern to be transferred via the projection optical system (33) is formed under predetermined first illumination conditions. ), A mask pattern (MR) is produced by drawing a parent pattern obtained by enlarging the pattern on the first substrate (40) and projecting the projected image under the first illumination condition. Under the second illumination condition set to cancel the change of the master, the master pattern of the master mask is transferred to the second substrate (26) via the reduction projection optical system (6). The photomask is transferred to the above to produce the photomask.

According to the second photomask manufacturing method, when a change (such as a change in line width) occurs in a projected image due to, for example, an optical proximity effect under the first illumination condition, the second photomask is used. The illumination condition (2) is set so as to have an optical proximity effect having a reverse characteristic, that is, to cause a change in the projected image to offset the change in the projected image due to the optical proximity effect accompanying the light proximity effect. Thus, a photomask corrected for the optical proximity effect generated under the first illumination condition can be manufactured in a short time and at low cost.

In this case, as an example, if the first illumination condition (or the second illumination condition) is illumination with a coherence factor of 0.7 or more, or annular illumination, the second illumination condition (Or the first illumination condition) is illumination having a coherence factor of 0.4 or less and 0.1 or more.

Next, the first photomask manufacturing apparatus according to the present invention includes a photomask (WR) on which a pattern to be transferred via the projection optical system (33) is formed under predetermined first illumination conditions. A mask stage (13) that holds a master mask (MR) on which a parent pattern that is an enlargement of the mask is drawn, and a plurality of illumination units that illuminate the mask on the mask stage. An illumination optical system (1 to 5) that illuminates under any of the conditions, and a second illumination condition selected from among the plurality of illumination conditions so as to cancel a change in the projected image due to the first illumination condition. It has a control system (18) set in the illumination optical system, and a reduction projection optical system (6) for transferring an image of a mask pattern on the mask stage onto a predetermined substrate (26). According to such a manufacturing apparatus of the present invention, the method of manufacturing a photomask of the present invention can be performed.

Next, a method for manufacturing a device according to the present invention is a method for manufacturing a predetermined device, wherein the pattern (20) of a predetermined layer of the device is multiplied by a. (α is a real number greater than 1) to create a first pattern (2 1) enlarged, and a first step of setting a first lighting condition when illuminating the first pattern; A second step of producing a mask (R i) by drawing a parent pattern (22) enlarged twice (3 is a real number greater than 1) on one or more first substrates; An optical image (PW i) obtained by reducing the pattern of the master mask by a factor of 1/3 under the second illumination condition set to offset the change in the projected image due to the first illumination condition (2) A working mask (WR) is fabricated by transferring it onto a substrate. The third step, and under the first lighting conditions, an image obtained by reducing the pattern on the working mask by a factor of α And a fourth step of transferring onto a third substrate (W).

According to such a method for manufacturing a device of the present invention, a photomask in which a pattern is corrected for an optical proximity effect when a mask pattern is transferred under a first illumination condition can be manufactured in a short time at low cost. Can be manufactured. In particular, since a plurality of photomasks can be manufactured in a short time and at low cost, high-performance devices with excellent line width accuracy can be mass-produced in a short time and at low cost. Next, a third method for manufacturing a photomask according to the present invention is a method for manufacturing a photomask (WR) having a pattern (21) transferred onto a photosensitive substrate by an exposure apparatus used for device manufacture, A mask (R i), which forms at least a part (P i) of the parent pattern (22) obtained by enlarging the pattern, is arranged on the object plane side of the projection optical system (6). The master mask is illuminated under illumination conditions corresponding to the proximity of some of the parent patterns, and a photomask manufacturing substrate (26) arranged on the image plane side via the projection optical system. The photomask is manufactured by transferring a reduced image of at least a part of the parent pattern. According to the third method for manufacturing a photomask of the present invention, the device A photomask corrected for the optical proximity effect generated during manufacturing can be manufactured in a short time and at low cost.

Next, a second photomask manufacturing apparatus according to the present invention is a photomask (WR) manufacturing apparatus having a pattern (21) transferred onto a photosensitive substrate by an exposure apparatus used for device manufacturing, An illumination optical system (1 to 5) for illuminating the master mask (R i) on which at least a part (P i) of the parent pad (22) is enlarged, and A projection optical system (6) for projecting a reduced image of the master mask on a photomask manufacturing substrate (26), and the illumination conditions of the master mask corresponding to the proximity of at least some of the parent patterns. Adjustment device set for the illumination optical system (1

8). According to such a manufacturing apparatus of the present invention, the method for manufacturing a photomask of the present invention can be performed.

Next, the first or second photomask according to the present invention is manufactured using the photomask manufacturing method or manufacturing apparatus according to the present invention, respectively, and is capable of correcting the optical proximity effect in a short time and at low cost. There is an advantage that a photomask on which the coating is performed can be obtained. The device according to the present invention is manufactured using the device manufacturing method according to the present invention, and has an advantage that a high-performance device excellent in line width accuracy and the like can be obtained. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a schematic configuration diagram showing an apparatus for manufacturing a reticle used in an example of a preferred embodiment of the present invention. FIG. 2 is an explanatory diagram of a method for correcting a pattern deformation due to an optical proximity effect generated when transferring a mask pattern. FIG. 3 is a diagram illustrating an example of a design process of a parent pattern formed on a master reticle. FIG. 4 is a diagram illustrating an example of a process for manufacturing a working reticle and a semiconductor device. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, an example of a preferred embodiment of the present invention will be described with reference to the drawings. In this example, the present invention is applied to the case of manufacturing a reticle for manufacturing a semiconductor device as a photomask.

FIG. 1 shows an optical projection exposure apparatus for manufacturing a working reticle of this embodiment. In FIG. 1, illumination light (exposure light) IL for exposure emitted from an exposure light source 1 is a relay lens 2, and An aperture stop (hereinafter referred to as “σ stop”) 4 of the illumination system is illuminated via an optical integrator (a fly-eye lens in FIG. 1) 3. The size of the aperture of the diaphragm 4 is adjustable by the drive system 4a. Under the control of a main control system 16 that controls the overall operation of the apparatus, an illumination optical system controller 18 controls the light emission of the exposure light source 1 and the aperture diameter of the stop 4. Although not shown, an exchange device for replacing the σ stop 4 with a ring-shaped aperture stop having a ring-shaped aperture and a modified illumination aperture stop having a plurality of small apertures is also provided. . As the exposure light IL, K r F excimer one laser light (wavelength 248 η m), A r F excimer one laser light (wavelength 1 93 nm) excimer one laser light such as, F ₂ laser beam (wavelength: 1 57 nm), the harmonics of a YAG laser, or the i-line (wavelength 365 nm) of a mercury lamp can be used.

The exposure light IL that has passed through the σ stop 4 illuminates the transfer target reticle MR via the condenser lens system 5. The master reticle MR is formed by drawing a parent pattern obtained by enlarging a predetermined mask pattern on the pattern forming surface (lower surface) of a substrate 40 such as a glass substrate. _{C The} exposure light IL transmitted through the master reticle MR is projected. An image obtained by reducing the parent pattern at a reduction magnification (1ZJ3 is, for example, 1Z4, 15) is formed on a substrate 26 such as a glass substrate for a working reticle via the optical system 6. Form. A variable aperture stop 7 is arranged on the optical Fourier transform plane (pupil plane) of the projection optical system 6 with respect to the pattern forming surface of the master reticle MR, and the exit side of the projection optical system 6 is arranged by the aperture stop 7. The numerical aperture NA of the (substrate 26 side) and the numerical aperture N Am of the incident side (master reticle MR side) are defined.

Although the condenser lens system 5 is simplified, it is actually an optical system that forms an image once inside and has a reticle blind (field stop) on the image forming surface. The illumination optical system of this example is composed of an exposure light source 1, a relay lens 2, an optical integrator 3, a squeezing aperture 4, and a condenser lens system 5. In this case, the σ stop 4 is arranged on the optical Fourier transform surface with respect to the condenser lens system 5 with respect to the pattern formation surface of the mass reticle MR. For this reason, the maximum value of the incident angle of the exposure light IL to the mass reticle MR, that is, the half angle of the aperture 01 is set to a desired value by adjusting the size of the aperture of the σ stop 4. In the following, sin 0 1 which is the sine of the half angle 01 of the aperture is referred to as “the numerical aperture N A i of the illumination optical system”. The value of the ratio (= NA i ZNAm) of the numerical aperture NA i of the illumination optical system to the numerical aperture N Am on the entrance side of the projection optical system 6 is generally called a coherence factor (σ value). .

The resolution R of the projection exposure apparatus of the present embodiment is expressed by the following equation using the wavelength of the exposure light, the process coefficient k, and the numerical aperture NA of the projection optical system 6 on the exit side, similarly to a normal projection exposure apparatus.

R = k

The numerical aperture NA on the exit side is the sine of the maximum value of the incident angle of the light beam converged on one point on the substrate 26 (half angle of the aperture) 0 3 (that is, NA = sin Θ 3), and the projection optics The numerical aperture NAm on the entrance side of the system 6 is equal to the master reticle MR of the luminous flux that originates from one point on the master reticle MR and reaches the substrate 26. Since it is the sine of the maximum value of the exit angle (half-angle of the aperture) for the exit angle (that is, NAm2 sin Θ 2),

N Α = β X N Am (3)

However, as described above, 1Z3 is the reduction magnification of the projection optical system 6. In addition, since the light flux passing through the master reticle MR and reaching the substrate 26 is restricted by the aperture stop 7 in the projection optical system 6, the size of the aperture of the aperture stop 7 should be adjustable. Thus, the numerical aperture NA and, consequently, the numerical aperture NAm can be adjusted to a desired value. In the following, the Z axis is taken parallel to the optical axis AX of the projection optical system 6, the X axis is taken parallel to the plane of Fig. 1 in a plane perpendicular to the Z axis, and the Y axis is taken perpendicular to the plane of Fig. 1. I do.

First, the master reticle MR is held on the reticle stage 13, and the reticle stage 13 positions the master reticle MR on the reticle base 14 within a predetermined range in the X, Y, and rotation directions. I do. The position of reticle stage 13 (master reticle MR) is measured with high precision by a laser interferometer built in reticle stage drive system 15, and its position information and control from main control system 16 Based on the information, reticle stage drive system 15 controls the position of reticle stage 13.

Reticle alignment microscopes (hereinafter referred to as “RA microscopes”) 19 A and 19 B are arranged above the master reticle MR, and the RA microscope 11 is used to align the master reticle MR. The positions of the marks 27 A and 27 B (see FIG. 4) are measured, and the measurement results are supplied to the main control system 16. On the other hand, the main control system 16 holds the substrate based on the measurement result, while the substrate 26 for the working reticle is sucked and held on a substrate holder (not shown), and the substrate holder is fixed on the Z tilt stage 8. The Z tilt stage 8 is mounted on the XY stage 9 so that it can move two-dimensionally. ing. The XY stage 9 positions the tilt stage 8 in the X direction, the right direction, and the rotation direction by, for example, a linear motor. Then, the X coordinate, the 及び coordinate, and the rotation angle of the tilt stage 8 are measured by the movable mirror 10 fixed to the upper end of the tilt stage 8 and the laser interferometer 11, and the measured values are transferred to the main control system 1. The substrate stage driving system 12 is supplied to the substrate stage driving system 12 and controls the operation of the stage 9 based on the measured values and the control information from the main control system 16.

The tilt stage 8 incorporates a drive mechanism for controlling the focus position (position in the optical axis AX direction) of the substrate 26 and the tilt angle. The focus position is measured at a plurality of measurement points on the surface of the substrate 26 by an auto focus sensor (not shown), and based on the measurement results, the Z tilt stage 8 performs an auto focus method and an auto focus. The surface of the substrate 26 is adjusted to the image plane of the projection optical system 6 by a belling method. The substrate stage is composed of the Z tilt stage 8 and the XY stage 9.

In addition, the master reticle MR and other masks are placed on one substrate 26.

—It is also possible to expose the reduced image of the reticle's parent pattern while screen-joining. In this case, the reticle loader (not shown) provided near the reticle stage 13 can replace the master reticle. Done. The master reticle (for example, the pattern surface or the end surface) conveyed onto the reticle stage 13 has the type of the parent pattern and the conditions such as the illumination condition and the imaging condition after being transferred onto the reticle. It is recorded as a bar code BC, and the main control system 16 recognizes the condition by reading the bar code BC attached to each master reticle via the bar code reader 17. Information such as lighting conditions corresponding to the conditions read from the bar code BC is stored in a storage unit in the main control system 16 as, for example, a table (details will be described later). Based on this, the lighting conditions (σ value, etc.) for the mass reticle MR are set.

Actually, when transferring the image of the master pattern on the master reticle MR onto the substrate 26, a light-shielding film such as a chrome (Cr) film is formed on the substrate 26 in advance, and the A photoresist is applied beforehand. First, after aligning the master reticle MR using the RA microscopes 19 A and 19 B, the XY stage 9 is driven so that a predetermined shot area of the substrate 26 on the Z tilt stage 8 is formed. Move to the exposure area of the projection optical system 6. In addition, the reticle blind (not shown) in the condenser lens system 5 is adjusted so that only the desired pattern on the master reticle MR is illuminated, and the mask reticle MR is exposed by the exposure light IL from the illumination optical system. Then, a reduced image of the illuminated pattern is projected and exposed on a substrate 26 via a projection optical system 6. Subsequently, when the images of the patterns in different areas on the master reticle MR are transferred to different shot areas on the substrate 26, the above-described reticle blind is illuminated with patterns in the different areas. The Z-tilt stage 8 is moved stepwise to move the next shot area on the substrate 26 to the exposure area of the projection optical system 6, and irradiates the exposure light IL while performing screen splicing. .

Also, when exposing a pattern of another master reticle different from the master reticle MR, after exchanging the master reticle on reticle stage 13, the Z tilt stage 8 (substrate 26) After performing the step movement, exposure is performed while screen joining is performed. In this manner, the operation of exposing the master reticle pattern image to a plurality of shot areas on the substrate 26 is repeated in a step-and-repeat method (step-and-stick method). The entire reduced image of the predetermined parent pattern is transferred onto the top. Then, develop the photoresist and etch the light-shielding film. The substrate 26 becomes a working reticle WR, that is, a reticle used when actually exposing the pattern of the device, through the steps of etching, resist stripping, and the like.

Thus, the peak reticle WR manufactured by the optical projection exposure apparatus of this embodiment is loaded into a projection exposure apparatus for manufacturing a semiconductor device having substantially the same configuration as the projection exposure apparatus of FIG.

As shown in FIG. 4, the projection exposure apparatus includes an illumination optical system 31 and a projection optical system 33 with a reduction ratio Ζ Ζ α (10; 174, 1/5, etc.). The working reticle WR is illuminated by illumination light (exposure light) 3 2 for exposure from the illumination optical system 31 under predetermined illumination conditions, and a reduced image 24 of the pattern of the working reticle WR is transmitted through the projection optical system 33. Is transferred to the shot area S # on the wafer W. The stage system and the like of the projection exposure apparatus for manufacturing a semiconductor device have almost the same configuration as that of the projection exposure apparatus for manufacturing a working reticle in FIG. 1, and a description thereof will be omitted. Of course, in a projection exposure apparatus for manufacturing semiconductor devices, the mask reticle MR in FIG. 1 is replaced with a ヮ -king reticle WR, and the substrate 26 is replaced with a wafer.

Next, as shown in FIG. 4, the working reticle WR is illuminated by the illumination optical system 31, and when a reduced image of this pattern is transferred onto the wafer W via the projection optical system 33, the light proximity effect is used. A certain degree of deformation of the projected image and, consequently, of the formed pattern occurs. In particular, when the pattern to be transferred is a fine dense pattern, the amount of deformation may exceed a predetermined allowable range. Therefore, in this example, as described with reference to FIG. 2, the effect of the optical proximity effect is corrected.

FIG. 2 (A) shows a mask reticle MR of this example. In FIG. 2 (A), the mask reticle MR is a parent pattern composed of patterns P 1 A to P 5 A on a substrate 40. 4 1 is formed. Parent pattern 4 1 It is a similar enlargement of the circuit pattern of a certain layer of the finally manufactured semiconductor device. The size of the parent pattern 41 is determined by reducing the magnification of the projection exposure apparatus for manufacturing semiconductor devices (projection optical system 33 in FIG. 4) to 1 × 0; and the projection exposure apparatus for manufacturing the working reticle (see FIG. 1). Using the reduced magnification l Zi3 of the optical system 6), the circuit pattern of the finally manufactured semiconductor device is enlarged by α 3 times. Each pattern constituting the parent computer 41 is represented by a thick line width for convenience, but is actually a fine pattern of the order of m in width. In addition, FIG. 2 (A), FIGS. 2 (B 1) and (B 2), and FIGS. 2 (C 1) and (C 2) actually have different magnifications. Are shown in the same size.

Conventionally, as shown in FIG. 2 (Β2), the circuit pattern of the finally manufactured semiconductor device is changed to α by using α times the reciprocal of the reduction magnification ΐΖα of the projection optical system 33 in FIG. The working reticle WR 'was manufactured by drawing the mask pattern 41 12 that was doubled on the substrate. The patterns Ρ 1 Β to Ρ 5 Β constituting the mask pattern 4 1 Β 2 are obtained by precisely multiplying the patterns Ρ 1 Α to Ρ 5 の of the parent pattern 41 in FIG. It is also a reduced pattern. However, when the mask pattern 41-2 of this single reticle WR 'is transferred, the pattern formed on the wafer may be deformed due to the optical proximity effect. In particular, in recent projection exposure apparatuses for manufacturing semiconductor devices, the illumination conditions are set to conditions with a large coherence factor (σ value) (1≥HI≥0.7) in order to increase the resolution, or deformation such as annular illumination is required. Due to the use of illumination, the image of the part of the transferred reticle where no other pattern exists on the working reticle (isolated part) is thinned by the optical proximity effect. Will be transcribed.

Fig. 2 (C2) shows the mask of one king reticle WR 'in Fig. 2 (Β2). FIG. 2 (C 2) shows the pattern 41 C 2 formed on the wafer when the pattern 41 B 2 is exposed under an illumination condition having a large σ value (1≥σ≥0.7). The isolated portions of the patterns Ρ 1 C ′, Ρ 2 C ′, and Ρ 3 C in the pattern 41 C 2 are thinly transferred by the optical proximity effect. On the other hand, the periodic portion of the pattern P 1 C, and the periodic patterns P 4 C, P 5 C ′ are transferred with their original line widths. Conventionally, in order to correct such a pattern deformation due to the optical proximity effect, 〇PC (Optical Proximity Correction) processing is applied, and when a mask pattern of a working reticle is drawn, the mask pattern is isolated beforehand. The line width of the target part was corrected to be thicker, but as described above, applying the OPC process resulted in a huge amount of correction data for that pattern, and the drawing time was considerably longer.

Ό.

Thus, in this example, using the mass reticle MR shown in FIG. 2 (A), the illumination conditions of the projection exposure apparatus for manufacturing the working reticle are changed according to the illumination conditions of the projection exposure apparatus for manufacturing the semiconductor device. By setting, the deformation of the pattern due to the optical proximity effect when transferring the masking pattern of the peaking reticle is corrected. For example, in the illumination optical system 31 of FIG. 4 of the projection exposure apparatus of this example, the illumination condition is set to a condition (1≥σ≥0.7) with a large coherence factor (σ value) in order to increase the resolution. The illumination condition of the projection exposure apparatus shown in Fig. 1 is set to a condition with a small value (0.1 ≤ ≤ 0.4).

In this case, if the σ value is smaller than 0.1, the amount of exposure light decreases, and the influence of the aberration of the projection optical system increases. If the σ value is larger than 0.4, the influence of the optical proximity effect is reduced, and a sufficient correction amount cannot be obtained. Under the illumination condition with a small σ value, the master pattern 41 of the master reticle MR shown in FIG. 2 (Α) is reduced and projected onto the substrate 26, and development and etching are performed. As a result, as shown in FIG. 2 (B 1), a mask pad 41 B 1 is formed on the working reticle WR. In the working reticle WR of Fig. 2 (B1), since the σ value is small, the optical proximity effect works in the direction to increase the line width of the isolated part, which is opposite to the case where the σ value is large. The line width of the isolated part of the pattern Β 1 Β, Ρ 2 Β, Ρ 3 を that constitutes 1 Β 1 is formed thicker than the design value (width exactly multiplied by the parent pattern 4 1), The line width of the periodic portion of the pattern {1} and the line width of the periodic pattern {4}: {5} are as designed.

Next, a reduced image of the mask pattern 411-1 of the working reticle WR is transferred onto a wafer by using a projection exposure apparatus for manufacturing a semiconductor device. The optical proximity effect that occurs at this time acts to make the isolated portion thinner so as to offset the optical proximity effect that occurs in the projection exposure apparatus for manufacturing a working reticle, and as shown in Fig. 2 (C1). The pattern を 1C to P5C constituting the pattern 41C1 formed on the wafer has dimensions as designed.

Note that even in the case of using deformed illumination such as annular illumination in a projection exposure apparatus for manufacturing semiconductor devices, the optical proximity effect works in the direction of making isolated parts thinner. The illumination condition of the projection exposure apparatus is set to a condition (0.1≤σ≤0.4) with a small coherence factor (σ value) so that the optical proximity effect works in the direction to make isolated parts thicker. .

When a phase shift reticle is used as a technique for increasing the resolution of a projection exposure apparatus for manufacturing semiconductor devices, it is preferable to reduce the coherence factor (σ value) of the projection exposure apparatus to about 0.4 or less. There is also. In such a case, the optical proximity effect that occurs in the projection exposure apparatus for manufacturing semiconductor devices acts in the direction of increasing the thickness of the isolated portion, so that In a projection exposure apparatus for reticle manufacturing, the coherence factor (σ value) should be set to about 0.7 or more and 1 or less so that the optical proximity effect works in the direction to make isolated parts thinner, or to illumination optics. The system shall be set to annular illumination. As a result, even when a phase shift reticle is used as a working reticle, a pattern having dimensions as designed can be formed on a wafer without performing OPC processing.

In the above-described embodiment, the area that can be transferred from one master reticle MR has an area of about 20 mm square even when the latest optical projection exposure apparatus is used. If it were to be reduced by a factor of four, the area would be only about 5 mm square on the wafer. Therefore, when actually manufacturing a marking reticle WR, it is necessary to manufacture a plurality of master reticles and transfer their parent patterns to the working reticle substrate 26 sequentially while performing screen splicing. Become.

Next, an example of a semiconductor device manufacturing process to which the working reticle manufacturing method of the above embodiment is applied will be described with reference to FIGS. 3 and 4. FIG.

FIG. 3 shows a design process of a parent pattern formed on the master reticle of this example. In FIG. 3, first, a circuit pattern 20 of a certain layer of a finally manufactured semiconductor device is designed. The circuit pattern 20 is formed by forming various line-and-space patterns or the like in a rectangular area having orthogonal sides having widths of dX and dY. Note that the circuit patterns 20 and the like shown in FIGS. 3 and 4 are virtual patterns having a wider line width than an actual circuit pattern. In this example, the circuit pattern 20 is magnified by α times (h> 1), and the mask pattern 21 consisting of a rectangular area of d X, a * d Y with the width of the orthogonal side is Create on the design data (including images). α times projection exposure when working reticle is used It is the reciprocal of the reduction ratio (ΙΖΟ;) of the optical device. Next, the mask pattern 21 is magnified three times (/ 3> 1), and the width of orthogonal sides is a parent pattern consisting of a rectangular area of α, j3, dX, -β, dY. 2 2 is created on the design data (including the image data), and its parent pattern 2 2 is divided vertically and horizontally to create Ν partial parent patterns Ρ 1, 2,. Create above. FIG. 3 shows an example where Ν = 16. Note that 3 times is the reciprocal of the reduction magnification (1Z3) of the projection optical system 6 of the projection exposure apparatus in FIG.

FIG. 4 shows a manufacturing process of the working reticle and the semiconductor device according to the present embodiment. In FIG. 4, first, the electron beam lithography apparatus (or laser beam lithography) is used from the partial parent pattern P i (i = 1 to N) in FIG. (A device or the like can also be used). A pattern pattern 2 on a glass substrate on which a light-shielding film is formed and a resist is applied on the partial parent patterns P i at the same magnification, respectively, is generated. By drawing on 5 and performing development and etching, a mass reticle R i (i = l to N) as a mass reticle mask is created. At this time, alignment marks 27 A and 27 B composed of two two-dimensional marks are formed on each master reticle R i in a predetermined positional relationship with respect to the partial parent pattern P i. The alignment marks 27 A and 27 B are used for alignment when performing screen joint exposure.

Next, using the projection exposure apparatus for manufacturing a working reticle shown in FIG. 1, a reduced image PW i (i = l to N) of the partial master pattern P i of the N master reticle R i is obtained by a factor of 1 Z j. ) Is transferred onto the substrate 26 on which the light-shielding film is formed and the photoresist is applied while sequentially performing screen joining, and is subjected to development, etching, and the like to form a mask pattern 23. Manufacture reticle WR. Also, on the substrate 26, two two-dimensional alignment marks 28 A, in a predetermined positional relationship with respect to the mask pattern 23, 2 8 B is formed in advance. The alignment marks 28 A and 28 B may be transferred as part of the mask panel 23.

Next, the working reticle WR is loaded into a projection exposure apparatus for semiconductor device manufacturing, and the working reticle WR is illuminated with the exposure light 32 from the illumination optical system 31 to form a mask pattern on the first reticle WR. After the image 24 of 23 is sequentially transferred to each shot area SA on the wafer W coated with the photoresist through the projection optical system 33 at a reduction ratio of 1 / a, development jetting and the like are performed. As a result, a circuit pattern of a certain layer is formed. Furthermore, a desired device is manufactured by repeating the exposure step and the pattern formation step, and then going through a dicing step and a bonding step. In the projection exposure apparatus for manufacturing a semiconductor device according to the present embodiment, the illumination condition having a large coherence factor is set in the illumination optical system 31 in order to obtain high resolution. In order to offset the influence of the optical proximity effect at this time, the illumination conditions of the projection exposure apparatus for transferring a reduced image of the partial parent pattern P i of the mask reticle R i onto the substrate 26 are as follows. Is set to a condition with a small risk factor. As a result, the image 24 projected on the wafer W and the dimensions of the circuit pattern formed thereon are the same as those of the originally designed circuit pattern 20 (see FIG. 3). Become.

In addition, since each partial parent pattern P i is projected after being reduced to 1 Z / 3, the drawing error of each partial parent pattern P i by the electron beam drawing apparatus is substantially reduced to 1 Z i3. Furthermore, since the drawing data of each partial parent pattern P i is 1 / N of the drawing data of the circuit pattern 20 in FIG. 3, the drawing time of each partial parent pattern P i can be reduced. Since the drift inside is also small, the N reticle R1 ~: RN can be manufactured in a short time and with high accuracy as a whole. Furthermore, when manufacturing a plurality of working reticles WR, the pattern of the N pieces of reticle R 1 to RN is repeated. Since it is only necessary to repeat the transfer, it is possible to manufacture a plurality of working reticles WR at extremely low cost and in a short time, and mass-produce semiconductor devices at low cost.

Note that it is not necessary to form all of the divided partial parent patterns on different mask and reticle R1 to RN as in this example, and to form some partial parent patterns on the same cell and reticle. You may do so. In this case, a desired partial parent pattern may be selected from a plurality of partial parent patterns formed on one master reticle and transferred onto a single reticle substrate.

When a mask pattern formed on a single reticle is divided into a plurality of partial parent patterns in this manner, for example, the area may be divided equally, but a unit having a specific function may be used. It is desirable to divide the data for each circuit pattern, for example, for each IP (Intellectual Property) part of the system LSI. That is, it is desirable to form a different master reticle for each unit circuit pattern such as the CPU core unit, the RAM unit, the ROM unit, the AZD conversion unit, and the DZA conversion unit. In this case, when manufacturing working reticles for different types of system LSIs, the same mask and reticle can be used for the common IP section, thus reducing the number of master reticle manufactured. can do. Therefore, the production cost of the working reticle and, consequently, the production cost of the system LSI can be reduced.

Also, when dividing a parent pattern into a plurality of partial parent patterns, it is not always necessary to make the connection between each partial parent pattern a straight line, and the connection is made according to the pattern shape so that the pattern is not divided. May be formed. At the connection (boundary) between each partial parent pattern, there is a pattern connection. In this example, a batch exposure type projection exposure apparatus was used for manufacturing the working reticle, but a scanning exposure type reduction projection exposure apparatus such as a step-and-scan method may be used instead. Good. In a scanning exposure type reduction projection exposure apparatus, a master reticle and a reticle substrate are synchronously scanned with a projection optical system at a reduction ratio in exposure. By using an optical scanning type reduction projection exposure apparatus, the distortion of the projection optical system can be reduced.

As described above, in this example, it is not necessary to perform the correction processing for each pattern constituting the mask pattern, as compared with the case where the PC processing is performed on the mask pattern on the design data. Furthermore, since the amount of pattern data does not increase due to the correction process and the writing time of the parent pattern by an electron beam lithography device or the like can be shortened, the manufacturing time when manufacturing a working reticle is greatly reduced, and the working reticle is manufactured at low cost. Can be manufactured. In a general electronic device manufacturing line, a plurality of sets of working reticles required for manufacturing a variety of mass-produced varieties are manufactured, and the electronic devices are manufactured using a plurality of projection exposure apparatuses. In such a configuration, once the reticle is manufactured, the required number of reticle can be manufactured by repeatedly using the master reticle. Time is not a big burden.

In the projection exposure apparatus for manufacturing a working reticle shown in FIG. 1, the position of the parent pattern on the master reticle MR is adjusted so that the amount of displacement of the mask pattern due to the distortion of the projection optical system 6 is corrected. It is preferable to shift by a predetermined amount. As described above, by correcting the positional deviation of the mask pattern at the stage of forming the master pattern on the master reticle MR, that is, at the stage of forming a large pattern, highly accurate positional correction can be achieved. It can be carried out. In the projection exposure apparatus of FIG. 1, the working reticle substrate 26 is supported at three points on the Z tilt stage 8 without being sucked. For this reason, the radius of the board 26 due to its own weight is actually measured or calculated (simulation), and the displacement between the parent pattern and the board 26 due to the radius is corrected. It is desirable to shift the formation position of the parent pattern on the master reticle MR by a predetermined amount based on the radius amount. At this time, the projection magnification or the distortion of the projection optical system 6 may be adjusted based on the amount of deflection so as to offset the deformation of the substrate 26 due to the radius. Instead of shifting the formation position of the parent pattern on the reticle MR according to the distortion of the projection optical system 6 and the radius due to its own weight, the master reticle MR and the substrate 2 The alignment position with 6 may be shifted by a predetermined amount. By the way, in FIG. 4, the optical type is used as the projection exposure apparatus for manufacturing a device. Alternatively, a projection exposure apparatus using EUV light in the soft X-ray region may be used. That is, the photomask that can be manufactured by the present invention is not limited to a transmission type or an ultraviolet type, but a photomask (a membrane mask, a stencil mask, etc.) for a charged particle beam or an X-ray, or a reflection type for an EUV. It may be a photomask. The working reticle may be a phase shift reticle, and devices manufactured by using the projection exposure apparatus shown in FIG. 4 are not limited to semiconductor devices, but include liquid crystal display elements, image pickup elements (CCD), and thin films. Any device such as a magnetic head and a display may be used.

By the way, in the projection exposure apparatus shown in Figs. 1 and 4, an optical integrator to be placed in the illumination optical system is used instead of a fly-eye lens. A rod integrator may be used, or a fly-eye lens and a mouth integrator may be used in combination. When using the rod integrator, the incident surface is almost coincident with the Fourier transform surface in the illumination optical system, and the exit surface is arranged almost conjugate with the reticle pattern surface in the illumination optical system. Is done. Therefore, the reticle blind (field stop) is arranged close to the exit surface of the rod integrator, and the aperture stop plate 4 is arranged close to the entrance surface of the rod integre, or It is arranged on the Fourier transform plane (pupil plane) set between the reticle and the reticle.

Further, the projection optical system in FIGS. 1 and 4 is not limited to a dioptric system including only a plurality of dioptric elements, but a catadioptric system having a dioptric element and a reflective optical element (such as a concave mirror), May be a reflection system composed of only the reflection optical element of the above. Here, the catadioptric projection optical system includes an optical system having at least a beam splitter and a concave mirror as a reflection optical element, and an optical system having a concave mirror and a mirror without using a beam splitter as a reflection optical element. As disclosed in U.S. Pat.Nos. 5,031,976, 5,787,229, and 5,717,1818, a plurality of refractive optics and two reflections are disclosed. There is an optical system or the like in which an optical element (at least one of which is a concave mirror) is arranged on the same optical axis. Note that the projection optical system in FIG. 4 may be a unit magnification system or an enlargement system.

Further, in the projection exposure apparatus shown in FIG. 1, a modified illumination or a change of the σ value, etc., are performed using the aperture stop replacement device of the illumination optical system or the drive system 4a of the σ stop 4. For example, at least one movable optical element is arranged between the exposure light source 1 and the optical integrator 3, and the intensity distribution of the illumination light on the incident surface of the optical integrator 3 (that is, its size). May be changed. Also, that at least one light A pair of conical prisms (axicons) is further placed on the side of the exposure light source 1 than the optical element, and the distance between the pair of axicons in the optical axis direction is adjusted, so that the illumination light on the entrance surface of the optical integrator 3 May be configured to be changeable into an annular shape whose intensity distribution is higher outside the center than outside the center. As a result, in the fly-eye lens, it is set on the exit-side focal plane located on the Fourier transform plane in the illumination optical system, and in the case of the rod gin, it is set on the entrance plane or between the exit plane and the reticle. It is possible to change the intensity distribution of the illumination light on the Fourier transform plane of the illumination optical system. Also, even if the σ value is reduced or the normal illumination is changed to deformed illumination (for example, annular illumination), the loss of illumination light quantity accompanying the change can be significantly reduced, and high throughput is maintained. Becomes possible. It should be noted that the modified illumination method in which the intensity distribution of the illumination light on the Fourier transform plane in the illumination optical system is increased in four local regions decentered from the optical axis of the illumination optical system from the center thereof is adopted. For example, by adjusting the distance between a pair of axicons, the intensity distribution of the illumination light on the Fourier exchange surface is made into an annular shape, and a light shielding plate (or a dimming plate) for defining four local regions is provided on the Fourier transform surface. Just place them. Further, a diffractive optical element that receives illumination light from a light source and generates, for example, diffracted light distributed in the above-described four local regions may be used. When performing normal illumination or annular illumination, the diffractive optical element can be exchanged with another diffractive optical element that distributes diffracted light in a rectangular or circular predetermined area centered on the optical axis of the illumination optical system. It is desirable to configure. Further, instead of such excimer monodentate or F ₂ laser, infrared region oscillated from the DFB semiconductor laser one The or fiber laser, or a single-wavelength, single-The visible region, for example, erbium (E r) (or erbium And ytterpium (both Y b)) may be amplified by a fiber amplifier doped with the same and a harmonic converted to a wavelength of ultraviolet light using a nonlinear optical crystal may be used. For example, if the oscillation wavelength of a single-wavelength laser is in the range of 1.51 to 1.5, the 8th harmonic whose generated wavelength is in the range of 189 to 199 nm, or the generated wavelength is 1 5 1 A 10th harmonic within the range of ~ 159 nm is output. In particular, if the oscillation wavelength is in the range of 1.544 to 1.553 xm, the 8th harmonic in the range of 193 to 194 nm, that is, ultraviolet light having almost the same wavelength as the ArF excimer laser can be obtained. When the oscillation wavelength 1. a 57~1. 58 / xm in the range of 10 harmonic in the range of 1. 57 to 1 58 nm, i.e. F _2, single tHE with ultraviolet light having almost the same wavelength is obtained Can be

If the oscillation wavelength is in the range of 1.03 to 1.12 m, a 7th harmonic whose output wavelength is in the range of 147 to 160 nm is output, and especially the oscillation wavelength is 1.099 Assuming that the wavelength is within the range of 1.106 m, the seventh harmonic within the wavelength range of 157 to 158 zm, that is, ultraviolet light having substantially the same wavelength as the F ₂ laser can be obtained. It should be noted that, as the single-wavelength oscillation laser, a laser-doped fiber laser is used.

Furthermore, the illumination light for exposure is not limited to far ultraviolet light (DUV light) or vacuum ultraviolet light (VUV light), etc., but has a wavelength of 5 to 15 nm, for example, 13.4 nm or 11. Extreme ultraviolet light (EUV light XUV light) in the soft X-ray region of 5 nm may be used. An exposure apparatus using far ultraviolet light, vacuum ultraviolet light, or the like generally uses a transmission type reticle, and the reticle substrate is quartz glass, fluorine-doped quartz glass, fluorite, magnesium fluoride, or the like. Alternatively, quartz or the like is used. In addition, a reflective mask is used in an EUV exposure apparatus, and a transmission type mask (stencil mask, membrane mask) is used in a proximity type X-ray exposure apparatus or an electron beam exposure apparatus, and a silicon substrate is used as a mask substrate. A wafer or the like is used.

It should be noted that an illumination optical system composed of a plurality of optical elements and a projection optical system are incorporated into the main body of the projection exposure apparatus to perform optical adjustment, and a large number of mechanical parts. The reticle stage and wafer stage made of the product are attached to the main body of the projection exposure apparatus, wiring and piping are connected, and the overall adjustment (electrical adjustment, operation confirmation, etc.) is performed to manufacture the projection exposure apparatus of the above embodiment. can do. It is desirable that the exposure apparatus be manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

The present invention is not limited to the above-described embodiment, and can take various configurations without departing from the gist of the present invention. In addition, all disclosures, including the specification, claims, drawings, and abstract, of Japanese Patent Application No. 10-36 059 94, filed on February 18, 1998 Is incorporated here as is. Industrial applicability

According to the first method for manufacturing a photomask of the present invention, it is possible to manufacture a photomask corrected for deformation of a projected image caused by, for example, the optical proximity effect that occurs under the first condition. At this time, the time required for the correction processing is greatly reduced compared to the case where correction is performed for each pattern constituting the mask pattern on the design data, and the amount of pattern data does not increase due to the correction processing. When the parent pattern on the mask is drawn using, for example, an electron beam drawing device, the drawing time is greatly reduced. Therefore, a photomask in which the correction for the optical proximity effect generated under the first condition is substantially performed can be manufactured at low cost and in a short time.

Similarly, according to the second photomask manufacturing method of the present invention, a photomask corrected for the optical proximity effect generated under the first illumination condition is manufactured at low cost and in a short time. be able to.

Next, according to the first or second photomask manufacturing apparatus of the present invention, The method for manufacturing a photomask of the invention can be implemented. Further, according to the device manufacturing method of the present invention, a photomask corrected for the optical proximity effect can be manufactured in a short time and at low cost, and as a result, high-performance devices can be mass-produced at low cost. be able to.

Further, according to the third photomask manufacturing method of the present invention, a photomask corrected for the optical proximity effect generated when manufacturing a device can be manufactured in a short time and at low cost.

Further, according to the first or second photomask of the present invention, there is an advantage that a photomask corrected for the optical proximity effect in a short time and at low cost can be obtained. Further, according to the device of the present invention, there is an advantage that a highly functional device excellent in line width accuracy and the like can be obtained.

Claims

The scope of the claims

1. A method for manufacturing a photomask on which a pattern to be transferred via a projection optical system is formed under predetermined first conditions,

A master mask is produced by drawing the enlarged parent pattern on the first substrate,

Under a second condition set in accordance with the first condition, the master pattern of the mask is transferred onto a second substrate via a reduction projection optical system to produce the photomask. A method for manufacturing a photomask, comprising:

2. A method for manufacturing a photomask in which a pattern transferred through a projection optical system under predetermined first illumination conditions is formed,

A master mask is manufactured by drawing a parent pattern enlarging the pattern on the first substrate,

Under a second illumination condition set to offset a change in a projected image due to the first illumination condition, the parent pattern of the master mask is reduced and transferred onto a second substrate via a projection optical system. And producing the photomask.

3. The first illumination condition is illumination having a coherence factor of 0.7 or more, or annular illumination,

3. The method according to claim 2, wherein the second illumination condition is illumination having a coherence factor of 0.4 or less and 0.1 or more.

4. The first illumination condition is illumination having a coherence factor of 0.4 or less and 0.1 or more,

The second illumination condition is illumination having a coherence factor of 0.7 or more, Or a ring illumination.

Manufacturing method.

5. An apparatus for manufacturing a photomask in which a pattern transferred through a projection optical system under a predetermined first illumination condition is formed,

A mask stage holding a master mask on which a parent pattern obtained by enlarging the pattern is drawn;

An illumination optical system for illuminating the mask on the mask stage under any of a plurality of illumination conditions;

A control system for setting, in the illumination optical system, a second illumination condition selected from among the plurality of illumination conditions so as to cancel a change in a projected image due to the first illumination condition;

A reduction projection optical system for transferring an image of a mask pattern on the mask stage onto a predetermined substrate;

An apparatus for manufacturing a photomask, comprising:

6. A method for manufacturing a given device,

A first step of creating a first pattern obtained by enlarging a pattern of a predetermined layer of the device by a factor of α (α is a real number greater than 1), and setting a first illumination condition when illuminating the first pattern; When,

A second mask is fabricated by drawing a parent pattern, which is three times the first pattern (/ 3 is a real number greater than 1) on one or more first substrates. Process and

An optical image obtained by reducing the pattern of the master mask by a factor of 3 on the second substrate under a second illumination condition set to cancel the change in the projected image due to the first illumination condition is provided on a second substrate. A third step of producing a king mask by transferring the

Under the first illumination condition, the pattern on the working mask is a fourth step of transferring the image reduced by a times onto the third substrate,

A method for manufacturing a device, comprising:

7. A method for producing a photomask having a pattern transferred onto a photosensitive substrate by an exposure apparatus used for device production,

A mask in which at least a part of the parent pattern obtained by enlarging the pattern is formed is disposed on the object plane side of the projection optical system, and the mask is formed under illumination conditions according to the proximity of the at least part of the parent pattern. Illuminating the mask and transferring the reduced image of the at least a part of the parent pattern onto a photomask manufacturing substrate disposed on the image plane side of the photomask via the projection optical system. A method for manufacturing a photomask, comprising: manufacturing a photomask.

8. The method for manufacturing a photomask according to claim 7, wherein the illumination condition is determined so that the proximity effect of the exposure device and the proximity effect have opposite characteristics.

9. The illumination condition is at least one of a shape and a size of an intensity distribution of the illumination light in an illumination optical system that irradiates the master mask with illumination light, on a Fourier transform surface with respect to a pattern surface of the master mask. 8. The method for manufacturing a photomask according to claim 7, wherein one is set to a predetermined state.

10. The parent pattern is formed by being divided into at least two regions, and the reduced images of the at least two regions are connected and transferred onto the substrate for manufacturing the photomask. The method for producing a photomask according to any one of claims 7 to 9.

11. An apparatus for manufacturing a photomask having a pattern transferred onto a photosensitive substrate by an exposure apparatus used for manufacturing a device,

An illumination optical system that illuminates a mask that forms at least a part of the parent pattern obtained by enlarging the pattern; A projection optical system for projecting the reduced image of the master mask on a substrate for manufacturing a photomask,

An adjusting device for setting an illumination condition of the master mask in the illumination optical system in accordance with the proximity of the at least a part of the parent pattern.

12. The adjustment device includes an optical member that changes an intensity distribution of the illumination light on a Fourier transform plane with respect to a pattern plane of the mask in the illumination optical system. A photomask manufacturing apparatus according to claim 11.

13. A photomask manufactured by using the method for manufacturing a photomask according to any one of claims 1 to 4, 7 to 9.

14. A photomask manufactured by using the photomask manufacturing apparatus according to claim 5, 11, or 12.

15. A device manufactured by using the device manufacturing method according to claim 6.