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WO1998001898A1 - Appareil de gravure a ions reactifs (rie) - Google Patents

Appareil de gravure a ions reactifs (rie) Download PDF

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Publication number
WO1998001898A1
WO1998001898A1 PCT/JP1997/002326 JP9702326W WO9801898A1 WO 1998001898 A1 WO1998001898 A1 WO 1998001898A1 JP 9702326 W JP9702326 W JP 9702326W WO 9801898 A1 WO9801898 A1 WO 9801898A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing chamber
chamber
rie
processing
opening
Prior art date
Application number
PCT/JP1997/002326
Other languages
English (en)
Japanese (ja)
Inventor
Tadahiro Ohmi
Takahisa Nitta
Original Assignee
Kabushiki Kaisha Ultraclean Technology Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Ultraclean Technology Research Institute filed Critical Kabushiki Kaisha Ultraclean Technology Research Institute
Publication of WO1998001898A1 publication Critical patent/WO1998001898A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

  • the present invention relates to a RIE device. More specifically, the present invention relates to an RIE apparatus having a high etching selectivity of a target object with respect to a resist. Background art
  • the conventional method of finely processing an object to be processed on a semiconductor substrate is roughly as follows.
  • the treated body is heated.
  • development and heating and drying are performed.
  • the object to be processed is introduced into a reactive ion etching (RIE) apparatus, and a necessary region is etched.
  • RIE reactive ion etching
  • the resist force off To avoid being etched by plasma is no treatment chamber 0 9 or H 9 0 to etching processing, or, brought No, if oxygen atoms are not present in the processing chamber when plasma is generated.
  • Figure 5 shows a schematic diagram of the current RIE equipment.
  • reference numeral 501 denotes an object to be processed
  • 502 denotes a load chamber for introducing the object to be processed 501
  • 503 denotes a processing chamber for etching the object to be processed 501
  • 504 denotes a processing chamber.
  • First opening / closing means 505: means for preventing metal contamination
  • 506 means for preventing spatter
  • 507 lower electrode
  • 508 upper electrode
  • 509 matching device
  • 510 high frequency Power supply
  • 5 1 1 means for cooling the object 5 1 through the lower electrode 5 0 7
  • 5 1 2 is an insulator
  • 5 1 3 and 5 1 4 are exhaust means
  • 5 1 5 and 5 1 6 is a gas supply means.
  • the processing room 503 is made of aluminum base metal, and its inner wall surface is anodized. A1 is around the two electrodes 507 and 508, and the inner wall of the processing chamber 503 is A1. ⁇ 3 ceramic, and, with a shield made of quartz (S i 0 2)? One has been. A predetermined gas was supplied into the processing chamber 503 by the gas supply means 51 ⁇ , and high-frequency electric power of 13.56 ⁇ m was introduced to the lower electrode 507 to generate plasma. For example, high-frequency power of 200 W, pressure of 30 mTorr, and C as gas. Loading room 502 is S i ⁇
  • the object 501 before being introduced into the load chamber 502 was transported and stored in a clean room with its surface exposed.
  • the gate valve used as the first opening / closing means 504 was heated from outside by a heating means such as a heater.
  • Material to generate a device 0 7 and H 9 0 also inside is widely used.
  • H 9 0 and 0 2 in constructs a device within, for example, to protect the workpiece from metal contamination
  • quartz being used S i 0 9
  • ceramic A 1.0
  • quartz or ceramic When quartz or ceramic is sputtered by plasma, it emits oxygen atoms (0) as its constituent elements, which adversely affects the selectivity between the resist and the object (eg, SiO 2).
  • Registry itself contains an H 9 0 or an organic solvent.
  • the boiling point of the resist dissolved, for example, ethyl resulfate (ECA: Ethlcersolbacetate) is 15; however, the current bakebake after II light and development runs at a lower temperature of 130 ° C. Therefore, H9 ⁇ and organic solvents remain in the resist in large amounts. This residual H 9 % and organic matter have a significant effect on the etching process.
  • the resist becomes glass-shaped, and it is difficult to form an accurate pattern.
  • Material of the workpiece to be etched for example, when Etsu quenching the S i 0 9 film used as an interlayer insulating film, as is clear from the component, 0 2 is produced. Since this occurs during the plasma ⁇ 9 can not be effectively evacuated, it is a factor of selection ratio degradation.
  • An object of the present invention is to provide an RIE apparatus in which no oxygen atoms are present in a processing chamber when plasma is generated. Disclosure of the invention
  • the RIE apparatus of the present invention is an RIE apparatus in which a load chamber for introducing an object to be processed and a processing chamber for etching the object to be processed are connected via a first opening / closing means.
  • Metal contamination prevention means provided along an inner wall
  • spatter prevention means provided along an electrode in the processing chamber, and / or an inner wall of the processing chamber, at least the outermost surface of which does not contain oxygen atoms. It is characterized by.
  • metal contamination prevention means provided along an inner wall of the processing chamber, spatter prevention means provided along an electrode in the processing chamber, and / or an inner wall of the processing chamber have at least: Since the outermost surface is made of a material that does not contain oxygen atoms, metal contamination prevention means, spatter prevention means, and / or plasma generated from the inner wall of the processing chamber into the processing chamber to be etched. 0 to be mixed. However, the amount of 0 can be reduced. As a result, a RIE apparatus having a high selectivity can be obtained.
  • the pretreatment chamber that performs the UV curing process and the heating process on the resist provided on the object to be processed in a gas atmosphere that does not contain at least oxygen atoms includes the second opening and closing. Since it is in contact with the load chamber through the means, it is possible to reduce O 2 and H 20 generated from the resist provided on the object to be processed and the material of the object to be etched. . 25
  • the first or second and the second opening / closing means have a built-in heating mechanism, the amount of reaction by-products generated by the plasma adheres to the opening / closing means. To decrease. As a result, generation of particles can be suppressed, and failure of the opening / closing means can be avoided.
  • the processing chamber has means for exhausting a reaction by-product gas in a space between at least two electrodes or in the vicinity of the space, plasma generated between the electrodes is provided.
  • the anti-by-product gas can be uniformly removed within the electrode surface. As a result, etching with a small in-plane distribution becomes possible.
  • FIG. 1 is a schematic diagram showing an example of a RI device according to the present invention.
  • FIG. 2 is another example of the R I device related to the present invention, and is a schematic diagram when a pretreatment chamber is provided.
  • FIG. 3 is a schematic diagram illustrating a state in which the opening / closing means used in the RI device according to the present invention has a built-in heating mechanism.
  • FIG. 4 is a schematic diagram illustrating a processing chamber provided with a means for exhausting a reaction by-product gas in a space between at least two electrodes or in the vicinity of the space.
  • FIG. 5 is a schematic diagram showing an example of a conventional RI device.
  • Gas supply means that does not contain at least oxygen atoms
  • the RI device according to the present invention has a configuration as shown in FIGS. 1 and 2, for example.
  • Processing room 102 is a chamber made of AI alloy or SUS.
  • the metal contamination prevention means 105 provided along the inner wall of the processing chamber 102, the spatter prevention means 106 or Z provided along the electrodes in the processing chamber, and the inner wall of the processing chamber 102 are at least the outermost surface.
  • the metal contamination prevention means 105, the spatter prevention means 106, and / or the inner wall of the processing chamber 30102 may be made of carbide, nitride, or fluoride itself. Suitable charcoal Examples of the material and nitride include SiC, A1N, SiN, and the like.
  • the first method is to not expose the object to the clean room.
  • a gas that does not contain oxygen atoms gas with a residual moisture of 5 ppb or less
  • This method does not adsorb moisture.
  • a chan- nel having a transport mechanism for transporting a processing object filled with a gas containing at least elemental atoms between the RI III apparatus and the processing apparatus before bringing the processing object into the RI II apparatus. can be directly connected, or a closed box filled with a gas with low residual moisture can be used.
  • the second method is to expose the workpiece to the air in the clean room.
  • the workpiece When introducing the workpiece into the equipment, it has a heating mechanism and a loading chamber or heating that can introduce a gas with low residual moisture.
  • the object to be treated is introduced into the chamber, the temperature is raised to about 2 ⁇ 0 ° C in the chamber, and the water adsorbed on the front and back surfaces of the object is batch-purged using a gas with low residual moisture. This is the method of removing.
  • the metal contamination preventing means 105 provided along the inner wall of the processing chamber 103, the spatter preventing means 106 provided along the electrode in the processing chamber, and / or the inner wall of the processing chamber 103 are at least The surface was formed of a material that does not contain oxygen atoms, such as carbide, nitride, and fluoride. That is, the metal contamination preventing means 105, the spatter preventing means 106, or the inner wall of the processing chamber 103 may be itself a carbide, a nitride, or a fluoride. Moreover, metal contamination prevention means 1 0 5, sputtering evening prevention means 1 0 6, or and the inner wall of the processing chamber 1 0 3, and per se e.g.
  • a pretreatment chamber 201 for performing ⁇ -curing treatment and heat treatment on a resist provided on the object to be treated is provided with a second opening / closing means 20. 4 and connected to the load chamber 202.
  • the object to be treated with a registry in a gas atmosphere containing at least no oxygen atoms is subjected to UV curing. 5 0.
  • a high temperature bake of C was performed.
  • a pump with a large flow rate and a large displacement for example, a mechanical booster pump or a rotary pump with a capacity of 51 Zin to 101 Zm 1 n will be adopted. Further by ⁇ the raw material gas flow rate Te 5 to adjust the A r gas flow rate, a decrease in the relative amount of reaction products 0 0 like generated from the S i 0 o.
  • the reaction product can be quickly exhausted, and the reaction product does not adversely affect the etching.
  • the gate valve used as the opening / closing means 104, 204, 205 usually heats only from the outside of the valve 10. At the same time, the mixture is heated to 80 ° C. or higher, preferably 130 ° C. or higher, to prevent moisture adsorption and suppress reaction product adsorption. Therefore, by heating the inside of the gate valve and heating to the valve valve seat, not only the water adsorbed on the valve can be removed, but also the reaction product does not adhere, and the selectivity can be improved. Rather, it contributes to improving the operation rate of equipment.
  • THMR-iP330 manufactured by Tokyo Ohka Kogyo Co., Ltd. was used.
  • Etching gas 30 scan uses a CF 4 / H?, Such that the etch rate of the S I_ ⁇ 2 film is about 5 0 nm / min, moth Pressure, gas flow rate, and high frequency power applied to the electrodes were appropriately controlled.
  • metal contamination prevention means 105 As for the structure inside the processing room 103, metal contamination prevention means 105, spatter prevention means 106, and the inner wall of the processing room 103 were examined, and the four combinations shown in Table 1 were considered. The amount of H-W and 09 generated in was examined.
  • Processing chamber 1 0 3 Arumai bets treated consist A 1 alloy chamber having an inner wall, among which A 1 2 ⁇ third metal pollution hand stage 1 0 5 and sputter prevention means S i 0 106 was provided.
  • Condition B differs from condition A only in that the inner wall of the processing chamber 103 is SiC.
  • the condition C differs from the condition A only in that the anti-sparging means 106 is set to S i C.
  • Condition D is different from condition A in that the metal contamination prevention means 105, the spatter prevention means 106, and the inner wall of the processing chamber 103 are all SiC.
  • H 2 0 and 0. Is the result of the generation amount and the selection ratio.
  • the results of conditions B to D are normalized by the values obtained in condition A.
  • H 2 0 and 0 2 of the generation amount was determined from the respective molecular weight of 8 and 3 2 results.
  • H in condition A. 0 0 2 generation amount were respectively a 4 X 1 0- 10 A, 2 1 0- 10 A in ion current value. : Table 2)
  • the metal contamination prevention means provided along the inner wall of the processing chamber, the shatter prevention means provided for the electrode in the processing chamber, or the inner wall of the processing chamber are at least the outermost surface.
  • condition D alumite treatment
  • the metal contamination preventing means 105 and the spatter preventing means 106 were both SiC. Other points were the same as in Example 1.
  • a pretreatment chamber for performing a V cure treatment and a heat treatment on the resist provided on the treatment body is prepared.
  • the RIE device (Fig. 2) was used to connect the RIE device with the second opening / closing means.
  • reference numeral 201 denotes a pre-processing chamber
  • reference numeral 202 denotes a load chamber
  • reference numeral 203 denotes a processing chamber
  • reference numeral 205 denotes first opening / closing means
  • reference numeral 204 denotes second opening / closing means
  • reference numeral 206 denotes At least oxygen gas-free gas supply means
  • 207 and 208 are gas supply means
  • 209 to 211 are exhaust means
  • 221 is an object to be processed
  • 222 is a built-in heating system.
  • the stage, 2 2 3 is a window
  • 2 2 4 is a UV light source.
  • the metal contamination preventing means and the spatter preventing means of the processing chamber 203 were both SiC. Further, the processing chamber 2 0 3, the processing method of the load chamber 2 0 2 and pretreatment chamber 2 0 1 inner wall, fluoride passivated - was (A 1 F ./ g F 2 ) treatment. Gate valves were used as the first and second opening / closing means 205 and 204.
  • Condition F is a combination corresponding to the prior art. That is, after the resist was provided on the Si wafer, no heat treatment was performed. The object to be processed 221 was merely passed through the pretreatment chamber 201 under atmospheric pressure.
  • Condition G is as follows: In the pretreatment chamber 201 under atmospheric pressure, a resist was set up on Si ⁇ ⁇ ha. Was.
  • Condition H is different from condition G in that baking is performed at 230 ° C.
  • Condition I the same heat treatment as in Condition H was performed while flowing dry air as a gas containing at least no oxygen atom into a pretreatment chamber under atmospheric pressure.
  • V-curing means that UV light [wavelength 220 to 270 nm, 8 mW / c (250 nm)] is applied to the object 2 21 from the UV light source 2 24 Means irradiation for 15 minutes through 23.
  • baking means to apply heat to the processing body 21 for 15 minutes using a heater built in the stage 222.
  • condition F without ripening treatment
  • a gas containing at least no oxygen atom by introducing a gas containing at least no oxygen atom, the amount of generated 0 2 and ⁇ 20 is reduced compared to condition F, and the selectivity is improved. For the trend / two.
  • reference numeral 310 denotes an outer wall of a gate valve
  • reference numeral 302 denotes a gate valve
  • reference numeral 303 denotes a control rod of a gate valve 302
  • reference numeral 304 denotes a ring
  • reference numeral 304 denotes a gate valve.
  • Reference numeral 303 denotes an internal heater installed on the outer wall of the gate valve.
  • Both the metal contamination prevention means 105 and the spatter prevention means 106 of the processing room I 03 were S i.
  • the processing method of the inner wall of the processing chamber 1 0 3 and the load chamber 1 0 2 were fluoride passivated t A 1 F 9 g F 9 ) process.
  • Condition K is a combination corresponding to the conventional technology.
  • the internal heater 300 and the external heater 310 of the first opening / closing means are all at 0 f ⁇ , and no heating is performed at all.
  • the condition L differs from the condition ⁇ ⁇ only in that the external heater 303 of the first opening / closing means is baked or always ⁇ ⁇ .
  • the setting during baking was 130 ° C, and the setting during etching was 80 ° C.
  • the condition M is different from the condition K in that the internal heater 300 of the first opening / closing means is set to on only during baking.
  • the setting during baking was 130 ° C.
  • the condition N differs from the condition K in that the internal heater 300 of the first opening / closing means is always on.
  • the setting during baking was 130 ° C, and the setting during etching was 80 ° C. This was the same as in Example 1.
  • Table 5 shows the amounts of H 9 ⁇ and 09 generated and the selection ratio under each condition.
  • the results under the conditions L to N are normalized by the values obtained under the condition K.
  • the first switching means 1 0 4 the amount of 0 2 and Eta 2 0 be heated from the outside is not reduced. It was found that the generation of O 2 and ⁇ 20 was reduced and the selectivity was improved by applying heat from the inside. In addition, when the first opening / closing means 104 is heated from the inside, the effect is further enhanced by always on (that is, heating is continued not only during the baking but also during the etching process). Was also confirmed.
  • the reaction products generated by the etching process do not adsorb to the first opening / closing means ⁇ 04, so that the amount of particles generated in the processing chamber is reduced. There was also an action to do. As a result, the advantage that the frequency of occurrence of a failure in the first switching means 104 was reduced was also confirmed.
  • the heat treatment of the object to be processed in the load chamber 102 in the RIE apparatus of FIG. 1 was studied.
  • a lamp heater (not shown) was used as a means for heating the object in the load chamber.
  • no heat treatment was performed in the first opening / closing means 104 and the processing chamber 103.
  • the metal contamination prevention means 105 and the spatter prevention means 106 of the processing room I 03 were both SiC.
  • the processing method for the inner walls of the processing chamber 103 and the load chamber 102 was fluoridation passivation IA 1 F 3 / Mg F) processing.
  • Condition (2) is a combination corresponding to the prior art. That is, this is the case where the object to be processed is not heated at all in the load chamber 102. Specifically, an object to be processed is introduced into the load chamber 102, the pressure in the load chamber 102 is reduced to a level of 10 to 8 Torr, and then the object to be processed is placed in the depressurized 3 ⁇ 4 ⁇ processing room. Was moved.
  • the condition ⁇ is determined by using a lamp heater (not shown) provided in the code chamber 102.
  • Condition Q differs from condition ⁇ in that the treated body is heated for 250 minutes by a lamp heater (not shown) provided in the load chamber 102 for 15 minutes.
  • the processing chamber 103 of the RIE apparatus shown in Fig. 1 was constructed using the DRM (Dipole Ring Magnet) system shown in Fig. 4.
  • the processing chamber shown in FIG. 4 differs from Example 1 in that a means for exhausting a reaction by-product gas is provided in or near the space between at least two electrode poles.
  • reference numeral 401 denotes an upper electrode
  • reference numeral 402 denotes a lower electrode
  • reference numeral 403 denotes a processing body
  • reference numeral 404 denotes a gas-filled vent
  • reference numeral 405 denotes a gas exhaust port
  • reference numeral 406 denotes a die ball.
  • a ring magnet 407 is a gas supply means
  • 408 is an exhaust means
  • 409 is a matching device
  • 410 is a high frequency power supply.
  • the distance d between the upper electrode 401 and the lower electrode 402 was kept at 30 mm or less.
  • the upper electrode 410 was provided with gas exhausting mechanisms 404 and 405.
  • a dipole ring and magnet 406 were provided on the outer periphery of the processing chamber.
  • a pump capable of exhausting a large flow rate for example, 500 liters was used.
  • RIE apparatus in which ( ⁇ or H 20 does not exist or is not brought into a processing chamber for performing an etching process.
  • the selectivity is improved, and it is possible to provide an RIE apparatus that can sufficiently adapt to fine processing with a design rule of 0.2 to 0.3 m or less.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention concerne un appareil de gravure à ions réactifs (RIE) possédant une chambre de gravure dans laquelle les éléments O2 et H2O n'existent pas ou dans laquelle il n'y aucun apport desdits éléments O2 et H2O. En outre, les ions d'oxygène ne s'y forment pas lorsqu'on y génère du plasma. Le rapport de sélection de gravure d'un objet soumis au traitement par rapport au résist est déterminé. Une chambre de chargement (102) dans laquelle on introduit un objet (101) est reliée à la chambre de traitement (103) dans laquelle l'objet (102) est gravé par un premier moyen d'ouverture/fermeture (104). Les surfaces externes du moyen (105) de prévention de contamination par le métal, qui est disposé le long des parois intérieures de la chambre de traitement (103), le moyen (106) de prévention de l'érosion superficielle qui est disposé le long des électrodes, dans la chambre de traitement (103), et/ou la paroi intérieure de la chambre de traitement (103) sont constitués de matériau ne contenant pas d'atomes d'oxygène.
PCT/JP1997/002326 1996-07-04 1997-07-04 Appareil de gravure a ions reactifs (rie) WO1998001898A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8/175296 1996-07-04
JP17529696 1996-07-04

Publications (1)

Publication Number Publication Date
WO1998001898A1 true WO1998001898A1 (fr) 1998-01-15

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2133521C1 (ru) * 1998-02-16 1999-07-20 Александрова Ариадна Тимофеевна Устройство для шлюзования
US6153068A (en) * 1997-03-07 2000-11-28 Tadahiro Ohmi Parallel plate sputtering device with RF powered auxiliary electrodes and applied external magnetic field
WO2008099768A1 (fr) * 2007-02-05 2008-08-21 Tokyo Electron Limited Appareil de gravure, procédé de gravure et procédé de fabrication d'un dispositif électronique
US9592250B2 (en) 2002-02-01 2017-03-14 Life Technologies Corporation Double-stranded oligonucleotides
US9777275B2 (en) 2002-02-01 2017-10-03 Life Technologies Corporation Oligonucleotide compositions with enhanced efficiency

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168920A (ja) * 1985-01-23 1986-07-30 Hitachi Ltd 物品処理装置
JPH01305835A (ja) * 1988-05-31 1989-12-11 Nippon Tungsten Co Ltd 窒化珪素被覆石英ガラス容器
JPH0379026A (ja) * 1989-08-23 1991-04-04 Hitachi Ltd ドライエッチング装置
JPH04360527A (ja) * 1991-06-07 1992-12-14 Tokyo Electron Ltd エッチング方法およびエッチング装置
JPH05275541A (ja) * 1992-03-28 1993-10-22 Yamaha Corp 多層配線形成法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168920A (ja) * 1985-01-23 1986-07-30 Hitachi Ltd 物品処理装置
JPH01305835A (ja) * 1988-05-31 1989-12-11 Nippon Tungsten Co Ltd 窒化珪素被覆石英ガラス容器
JPH0379026A (ja) * 1989-08-23 1991-04-04 Hitachi Ltd ドライエッチング装置
JPH04360527A (ja) * 1991-06-07 1992-12-14 Tokyo Electron Ltd エッチング方法およびエッチング装置
JPH05275541A (ja) * 1992-03-28 1993-10-22 Yamaha Corp 多層配線形成法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153068A (en) * 1997-03-07 2000-11-28 Tadahiro Ohmi Parallel plate sputtering device with RF powered auxiliary electrodes and applied external magnetic field
RU2133521C1 (ru) * 1998-02-16 1999-07-20 Александрова Ариадна Тимофеевна Устройство для шлюзования
US9592250B2 (en) 2002-02-01 2017-03-14 Life Technologies Corporation Double-stranded oligonucleotides
US9777275B2 (en) 2002-02-01 2017-10-03 Life Technologies Corporation Oligonucleotide compositions with enhanced efficiency
US9796978B1 (en) 2002-02-01 2017-10-24 Life Technologies Corporation Oligonucleotide compositions with enhanced efficiency
US10036025B2 (en) 2002-02-01 2018-07-31 Life Technologies Corporation Oligonucleotide compositions with enhanced efficiency
US10106793B2 (en) 2002-02-01 2018-10-23 Life Technologies Corporation Double-stranded oligonucleotides
US10196640B1 (en) 2002-02-01 2019-02-05 Life Technologies Corporation Oligonucleotide compositions with enhanced efficiency
US10626398B2 (en) 2002-02-01 2020-04-21 Life Technologies Corporation Oligonucleotide compositions with enhanced efficiency
WO2008099768A1 (fr) * 2007-02-05 2008-08-21 Tokyo Electron Limited Appareil de gravure, procédé de gravure et procédé de fabrication d'un dispositif électronique

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