WO1989005361A1 - Deposition of materials in a desired pattern on to substrates - Google Patents
Deposition of materials in a desired pattern on to substrates Download PDFInfo
- Publication number
- WO1989005361A1 WO1989005361A1 PCT/GB1988/001060 GB8801060W WO8905361A1 WO 1989005361 A1 WO1989005361 A1 WO 1989005361A1 GB 8801060 W GB8801060 W GB 8801060W WO 8905361 A1 WO8905361 A1 WO 8905361A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- deposition
- substrate
- conducting substrate
- conducting
- charged
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 48
- 230000008021 deposition Effects 0.000 title claims description 24
- 239000000463 material Substances 0.000 title claims description 21
- 238000000034 method Methods 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 27
- 238000010894 electron beam technology Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 230000010076 replication Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 26
- 239000005083 Zinc sulfide Substances 0.000 description 9
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001422033 Thestylus Species 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 208000028659 discharge Diseases 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000013383 initial experiment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 nitrogen ion Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/102—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by bonding of conductive powder, i.e. metallic powder
Definitions
- This invention relates to the deposition of materials on to substrates and, in particular, to the preferential, localised deposition of materials on to insulators and semiconductors.
- This method involves writing an artwork directly on to an insulating substrate using electrons or ions and depositing a metallic or a dielectric film by an indirect vacuum deposition (where the substrate is shielded from the direct stream of vapour) on this pattern without any masking or additional treatment to the substrate.
- a method of deposition of material on to a non-conducting substrate comprising writing a pattern of electrically-charged particles to create charged regions on the substrate and preferentially depositing said material on to said charged regions.
- FIG. 1 is a diagrammatic representation of apparatus suitable for depositing films using the method of the invention
- Figures 2 to 8 are micrographs showing films deposited in accordance with the invention
- Figure 9 is a trace of a stylus instrument scan of the film of Figure 8.
- a glass substrate 1 is mounted within a vacuum chamber 2.
- a charge pattern is written on the surface of the substrate using an electron gun comprising a filament 3, modulating grid 4, accelerating electrode 5 and deflection electrodes 6.
- a layer of zinc is preferentially deposited on the charged regions by means of an vaporising filament 7.
- the photograph in fig (1) shows a zinc metal film on a pattern in the form of the letters NPL approximately 75x25mm written with electrons on a glass substrate.
- the substrate was flooded, with electrons and a pattern produced by shadowing through a mask.
- a film of zinc, approximately 120mm thick was deposited separately by indirect evaporation.
- the micrograph in Figure 6 demonstrates that the simple shadowing procedure can also be used to write very fine patterns.
- a thin copper mask was used. It had four 2mm diameter and 100 ⁇ m wide rings with four concentric pin holes of 5, 10, 15 and 20 ⁇ m diameters respectively.
- the charge enhanced deposition will be particularly useful for the manufacture of integrated electronic and integrated optic chips. As charged writing and subsequent deposition of a thin film is carried out in vacuo this procedure is particularly applicable to automation.
- the very short wavelength of the electrons allows writing of very fine patterns at high packing densities and their low energy provides high definition with negligible substrate damage.
- Techniques currently used for ion beam machining, with some modifications, are suitable for the writing operation.
- Subsequent deposition of a film on such a pattern is also useful for exacting applications such as line width standards, mask production and as a resist layer. Oxygen and nitrogen ion or atom beams can be employed for writing oxide and nitride patterns.
- Electron beam energy, density, diameter and energy distribution tailored to a specific application can be applied for the production of blazed, sinusoidal or square wave diffraction gratings, zone plates or "Moth Eye” anti-reflection coatings in hard dielectric films.
- Such hard master copies are ideal for replication.
- the films can be transparent or opaque, both phase and amplitude diffraction optics can be fabricated.
- the process is particularly suitable for writing on plastics as a discharge treatment of plastic substrates improves the adhesion of a subsequently applied film.
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A localised charge pattern is written on the surface of an insulating substrate (1) using an electron gun (3, 4, 5, 6). Subsequently, a metallic layer is preferentially deposited on the charged regions by means of a vaporising filament (7).
Description
Deposition of materials in a desired pattern on to substrates.
This invention relates to the deposition of materials on to substrates and, in particular, to the preferential, localised deposition of materials on to insulators and semiconductors.
Driven by demand for submicron integrated circuits, optical engineers have been actively developing new photoresists, short wavelength printing methods and mask production using electron or ion beam and X-rays. This technology is also used for photolithographic optics, data storage and cosmetic applications. A typical modern lithographic process employs a fine mask produced say by electron beam machining which is imaged on a high resolution photoresist using deep ultra-violet radiation. Tight tolerances and the reproducibility demanded in exacting applications, however, continue to pose problems.
We have devised a method of localised deposition of materials on to insulating and semi conducting substrates. This method involves writing an artwork directly on to an insulating substrate using electrons or ions and depositing a metallic or a dielectric film by an indirect vacuum deposition (where the substrate is shielded from the direct stream of vapour) on this pattern without any masking or additional treatment to the substrate.
Studies carried out on the nucleation of low energy vapours in vacuum deposition of thin films on dielectric substrates have shown that nucleation occurs at charged sites on the substrate. It was also observed that in the vapour phase some compounds dissociate (and elements ionise) and therefore show greater attraction to charged sites and the film builds up mainly on the charged region producing a sharp edge. Preliminary investigations carried out with vapours of zinc and zinc sulphide indicate that the above procedure can be applied for an efficient writing process which is suitable for many photolithographic applications.
The effectiveness of one-stage operation was established by using an argon atom beam gun and zinc sulphide. Typically a film about 0.4μm thick of zinc sulphide was produced on a glass substrates in about one minute. Such films were found to be very adherent and hard. By using oxygen or nitrogen ion beams, either oxide or nitride films can be produced in a similar manner.
According to the present invention, there is provided a method of deposition of material on to a non-conducting substrate comprising writing a pattern of electrically-charged particles to create charged regions on the substrate and preferentially depositing said material on to said charged regions.
The charged regions may be created directly or by charging the substrate uniformly and subsequently discharging it locally by irradiation. An embodiment of the invention will now be described, by way of example, with reference to the accompanying drawings, in which: Figure 1 is a diagrammatic representation of apparatus suitable for depositing films using the method of the invention, Figures 2 to 8 are micrographs showing films deposited in accordance with the invention, and
Figure 9 is a trace of a stylus instrument scan of the film of Figure 8.
Referring now to the drawing, a glass substrate 1 is mounted within a vacuum chamber 2. A charge pattern is written on the surface of the substrate using an electron gun comprising a filament 3, modulating grid 4, accelerating electrode 5 and deflection electrodes 6. Subsequently, a layer of zinc is preferentially deposited on the charged regions by means of an vaporising filament 7.
In a further embodiment, using two simple metallic masks, charged patterns written on glass microscope slides with thermal electrons were coated with indirect films of zinc and zinc sulphide. Letters NPL at a magnification of approximately one, visible as a sharp bright pattern of metallic zinc (Figure 2)
show that the electric field generated by the charge can be adjusted to prevent deposition on uncharged area. The micrograph (Figure 3) at a magnification of 32 indicates that good masking can indeed produce a sharp step. Measurements made using a Rank Taylor Hobson Talystep instrument showed that the film was about 120nm thick and therefore opaque to visible light. A "negative" of a thinner stainless steel mask of a fine hexagonal pattern with only 0.3mm wide bars was produced with a zinc sulphide film (Figure 4) where the sharper horizontal bars are due to better masking.
Application of this method to a large area is demonstrated by the photograph in fig (1). It shows a zinc metal film on a pattern in the form of the letters NPL approximately 75x25mm written with electrons on a glass substrate. In initial experiments the substrate was flooded, with electrons and a pattern produced by shadowing through a mask. A film of zinc, approximately 120mm thick was deposited separately by indirect evaporation. The micrograph in Figure 6 demonstrates that the simple shadowing procedure can also be used to write very fine patterns. In these experiments a thin copper mask was used. It had four 2mm diameter and 100μm wide rings with four concentric pin holes of 5, 10, 15 and 20μm diameters respectively. This pattern was written on silica substrates using thermal electrons and indirect films of zinc sulphide evaporated in a separate operation. It is evident from the photograph that the condensation has occurred exclusively on the charged area. It was noted that lack of collimation of the electron beam and the separation between the mask and the substrate introduce some loss of definition. Natural oxidation of metals can provided adequate insulation to be able to carry out such a charged writing. This was established by writing fine charge patterns on aluminium and silicon substrates. The micrograph in Figure 7 shows a sharp pattern of a grid where the finest lines are about 15μm wide and about 50nm thinner than the surrounding area. It was written
with a zinc sulphide film on a silicon substrate.
To produce a submicron size patterns focused charged beams are employed for the writing. Fine charged lines have been written on silica substrates in a scanning electron microscope employing various accelerating voltages and different spot size. The width and the thickness of the films subsequently deposited showed close correspondence to the writing conditions. One of the zinc sulphide lines produced in this way is shown in Figure 8. It was about 5μm wide and the scan of this line using a Talystep stylus measuring instrument in Figure 9 showed that it was about 44nm thick and had a sharp edge. Some lack of definition may be due to spherical aberration in the electron optics and the slope of the Talystep trace may have been increased by the shape of the stylus. It will be apparent from the above results that the process can be applied to large or small and metal or dielectric substrates. It is also demonstrated that either metallic or insulating films of a few micrometer to several millimetre wide features can be produced. In many applications thickness variation of the same film is often required. Such a variation can be achieved by direct deposition of a film on the charged writing. The additional attractive force of the charge produces a thicker film on the art work. The micrograph at a magnification of 80 (Figure 5) shows a sharp pattern due to colour changes which are introduced by thickness variation of a zinc sulphide film on a charged glass substrate; the film on the charged region was about 50nm thicker. The method described above finds wide application to: Study of optical and electrical properties of materials in vapour and solid phase. Chip architecture. Multiple writing head.
The charge enhanced deposition will be particularly useful for the manufacture of integrated electronic and integrated optic chips.
As charged writing and subsequent deposition of a thin film is carried out in vacuo this procedure is particularly applicable to automation. The very short wavelength of the electrons allows writing of very fine patterns at high packing densities and their low energy provides high definition with negligible substrate damage. Techniques currently used for ion beam machining, with some modifications, are suitable for the writing operation. Subsequent deposition of a film on such a pattern is also useful for exacting applications such as line width standards, mask production and as a resist layer. Oxygen and nitrogen ion or atom beams can be employed for writing oxide and nitride patterns. Electron beam energy, density, diameter and energy distribution tailored to a specific application can be applied for the production of blazed, sinusoidal or square wave diffraction gratings, zone plates or "Moth Eye" anti-reflection coatings in hard dielectric films. Such hard master copies are ideal for replication. As the films can be transparent or opaque, both phase and amplitude diffraction optics can be fabricated. The process is particularly suitable for writing on plastics as a discharge treatment of plastic substrates improves the adhesion of a subsequently applied film.
Although the invention has been described with reference to insulator or semiconducting subtrates, it is also applicable to conducting substrates with an insulating layer on the surface which holds the electrical charge during the deposition process. It has been demonstrated that the technique is applicable to alumin iu m and silicon with a surface oxide layer.
Claims
1. A method of deposition of material on to a non-conducting substrate characterised in that it comprises writing a pattern of electrically-charged particles to create charged regions on the substrate and preferentially depositing said material on to said charged regions.
2. A method of deposition of material on to a non-conducting substrate as claimed in claim 1 characterised in that the charged regions are created directly.
3. A method of deposition of material on to a non-conducting substrate as claimed in claim 1 characterised in that the charged regions are created by charging the substrate uniformly and subsequently discharging it locally by irradiation.
4. A method of deposition of material on to a non-conducting substrate as claimed in claim 2 characterised in that a charge pattern is written on the surface of the substrate using an electron gun (3,4,5,6).
5. A method of deposition of material on to a non-conducting substrate as claimed in claim 4 characterised in that a conducting layer preferentially deposited on the charged regions by means of an vaporising filament (7).
6. A method of deposition of material on to a non-conducting substrate as claimed in either claim 4 or 5 characterised in that the charge pattern is written using a collimated electron beam.
7. A method of deposition of material on to a non-conducting substrate as claimed in any one of the preceding claims including the step of forming an insulating layer on a conducting or semi-conducting substrate.
8. A method of deposition of material on to a non-conducting substrate as claimed in any one of the preceding claims characterised in that a film of increased thickness is preferentially deposited by deposition on to a charged region of the substrate.
9. A method of deposition of material on to a non-conducting substrate as claimed in claim 2 characterised in that the electron beam is focused on the substrate.
10. A method of deposition of material on to a non-conducting substrate as claimed in any one of the preceding claims using a multiple writing head.
11. A method of deposition of material on to a non-conducting substrate as claimed in claim 7 characterised in that an oxygen beam is employed to form an oxide layer on the substrate.
12. A method of deposition of material on to a non-conducting substrate as claimed in claim 7 characterised in that a nitrogen beam is employed to form a nitride layer on the substrate.
13. An optical component characterised in that it is produced by a method as claimed in any one of the preceding claims 1 to 12.
14. A replication master characterised in that it is produced by a method as claimed in any one of the preceding claims 1 to 12.
15. An integrated circuit characterised in that it is produced by a method as claimed in any one of the preceding claims 1 to 12.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8728399 | 1987-12-04 | ||
| GB878728399A GB8728399D0 (en) | 1987-12-04 | 1987-12-04 | Deposition of materials to substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1989005361A1 true WO1989005361A1 (en) | 1989-06-15 |
Family
ID=10628005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/GB1988/001060 WO1989005361A1 (en) | 1987-12-04 | 1988-12-05 | Deposition of materials in a desired pattern on to substrates |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0396583A1 (en) |
| JP (1) | JPH03502213A (en) |
| GB (2) | GB8728399D0 (en) |
| WO (1) | WO1989005361A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2323855A (en) * | 1997-04-01 | 1998-10-07 | Ion Coat Ltd | Depositing a coating on a conductive substrate using positive bias and electron bombardment |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10350648A1 (en) * | 2003-10-29 | 2005-06-16 | Steiner Gmbh & Co. Kg | transponder |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE752049C (en) * | 1942-04-09 | 1954-03-08 | Bosch Gmbh Robert | Process for the production of patterned metallizations by vapor deposition in a vacuum |
| CH423405A (en) * | 1961-10-27 | 1966-10-31 | Ibm | Process for the vapor deposition of a sharply delimited pattern of small dimensions on a substrate serving as a carrier by vapor deposition of material in a vacuum |
| US3298863A (en) * | 1964-05-08 | 1967-01-17 | Joseph H Mccusker | Method for fabricating thin film transistors |
| US3436468A (en) * | 1965-05-28 | 1969-04-01 | Texas Instruments Inc | Plastic bodies having regions of altered chemical structure and method of making same |
| DE1765417A1 (en) * | 1967-05-29 | 1972-01-05 | Ibm | Maskless vapor deposition process |
| GB1542299A (en) * | 1976-03-23 | 1979-03-14 | Warner Lambert Co | Blade shields |
| EP0017360A2 (en) * | 1979-03-19 | 1980-10-15 | Xerox Corporation | Method and apparatus for pretreating a substrate, method and apparatus for pretreating a substrate and depositing a thin metallic film thereon |
| GB2148608A (en) * | 1983-10-22 | 1985-05-30 | Stc Plc | Forming conductive regions in polymeric materials |
| JPS6141762A (en) * | 1984-08-06 | 1986-02-28 | Res Dev Corp Of Japan | Ultra-fine pattern formation method |
| EP0206145A2 (en) * | 1985-06-20 | 1986-12-30 | International Business Machines Corporation | A method of metallising an organic substrate so as to achieve improved adhesion of the metal |
| EP0231795A2 (en) * | 1986-01-24 | 1987-08-12 | International Business Machines Corporation | Method for making printed circuit boards |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1060679A (en) * | 1963-12-09 | 1967-03-08 | Rank Xerox Ltd | Controlled xerographic development |
| GB1224228A (en) * | 1968-09-23 | 1971-03-03 | Scm Corp | Optical-to-electrostatic image transducer |
| US3663748A (en) * | 1969-08-06 | 1972-05-16 | Eastman Kodak Co | Facsimile system utilizing single crt for scanning and image reproduction |
| GB1458766A (en) * | 1973-02-15 | 1976-12-15 | Xerox Corp | Xerographic developing apparatus |
| GB1505101A (en) * | 1974-08-19 | 1978-03-22 | Xerox Corp | Preparation of a xerographic photoreceptor |
| DE2557685A1 (en) * | 1975-12-20 | 1977-06-30 | Ibm Deutschland | PROCESS FOR PRODUCING A SCREENED PHOTOCONDUCTOR LAYER |
| US4527177A (en) * | 1983-08-29 | 1985-07-02 | Xerox Corporation | Ion projection printer with virtual back electrode |
| US4591885A (en) * | 1984-09-04 | 1986-05-27 | Xerox Corporation | Ion projection copier |
-
1987
- 1987-12-04 GB GB878728399A patent/GB8728399D0/en active Pending
-
1988
- 1988-12-05 WO PCT/GB1988/001060 patent/WO1989005361A1/en not_active Application Discontinuation
- 1988-12-05 JP JP1500944A patent/JPH03502213A/en active Pending
- 1988-12-05 GB GB8828367A patent/GB2213167A/en not_active Withdrawn
- 1988-12-05 EP EP19890900284 patent/EP0396583A1/en not_active Withdrawn
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE752049C (en) * | 1942-04-09 | 1954-03-08 | Bosch Gmbh Robert | Process for the production of patterned metallizations by vapor deposition in a vacuum |
| CH423405A (en) * | 1961-10-27 | 1966-10-31 | Ibm | Process for the vapor deposition of a sharply delimited pattern of small dimensions on a substrate serving as a carrier by vapor deposition of material in a vacuum |
| US3298863A (en) * | 1964-05-08 | 1967-01-17 | Joseph H Mccusker | Method for fabricating thin film transistors |
| US3436468A (en) * | 1965-05-28 | 1969-04-01 | Texas Instruments Inc | Plastic bodies having regions of altered chemical structure and method of making same |
| DE1765417A1 (en) * | 1967-05-29 | 1972-01-05 | Ibm | Maskless vapor deposition process |
| GB1542299A (en) * | 1976-03-23 | 1979-03-14 | Warner Lambert Co | Blade shields |
| EP0017360A2 (en) * | 1979-03-19 | 1980-10-15 | Xerox Corporation | Method and apparatus for pretreating a substrate, method and apparatus for pretreating a substrate and depositing a thin metallic film thereon |
| GB2148608A (en) * | 1983-10-22 | 1985-05-30 | Stc Plc | Forming conductive regions in polymeric materials |
| JPS6141762A (en) * | 1984-08-06 | 1986-02-28 | Res Dev Corp Of Japan | Ultra-fine pattern formation method |
| EP0206145A2 (en) * | 1985-06-20 | 1986-12-30 | International Business Machines Corporation | A method of metallising an organic substrate so as to achieve improved adhesion of the metal |
| EP0231795A2 (en) * | 1986-01-24 | 1987-08-12 | International Business Machines Corporation | Method for making printed circuit boards |
Non-Patent Citations (2)
| Title |
|---|
| IBM TECHNICAL DISCLOSURE BULLETIN, Vol. 9, No. 11, April 1967, M.F. LEVY, "Preparing Additive Printed Circuits". * |
| PATENT ABSTRACTS OF JAPAN, Vol. 10, No. 199, C-359; & JP,A,61 041 762, (28-02-1986). * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2323855A (en) * | 1997-04-01 | 1998-10-07 | Ion Coat Ltd | Depositing a coating on a conductive substrate using positive bias and electron bombardment |
| GB2323855B (en) * | 1997-04-01 | 2002-06-05 | Ion Coat Ltd | Method and apparatus for depositing a coating on a conductive substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8828367D0 (en) | 1989-01-05 |
| GB8728399D0 (en) | 1988-01-13 |
| JPH03502213A (en) | 1991-05-23 |
| EP0396583A1 (en) | 1990-11-14 |
| GB2213167A (en) | 1989-08-09 |
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