[go: up one dir, main page]

USRE34783E - Method for determining absolute reflectance of a material in the ultraviolet range - Google Patents

Method for determining absolute reflectance of a material in the ultraviolet range Download PDF

Info

Publication number
USRE34783E
USRE34783E US08/111,298 US11129893A USRE34783E US RE34783 E USRE34783 E US RE34783E US 11129893 A US11129893 A US 11129893A US RE34783 E USRE34783 E US RE34783E
Authority
US
United States
Prior art keywords
reflectance
value
absolute
measured
absolute reflectance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US08/111,298
Inventor
Vincent J. Coates
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanometrics Inc
Original Assignee
Nanometrics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanometrics Inc filed Critical Nanometrics Inc
Priority to US08/111,298 priority Critical patent/USRE34783E/en
Application granted granted Critical
Publication of USRE34783E publication Critical patent/USRE34783E/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N2021/1748—Comparative step being essential in the method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light

Definitions

  • This invention relates to the determination of reflectance from a material and particularly to the determination of absolute reflectance independent of losses in an associated optical system.
  • Some materials are transparent with very little incident energy being reflected from the surface and some materials are opaque and absorb nearly all incident energy and reflect very little.
  • the .[.ratio of incident energy to reflected energy, or.]. reflectance.[.,.]. varies according to the wavelength of the incident radiation.
  • silicon as used in electronic microcircuits is transparent to infrared wavelengths, translucent between about one micron and infrared, and opaque to ultraviolet radiation.
  • the object of this invention is to determine the absolute reflectance value of a test material at a desired wavelength, from a measured value of reflectance.
  • the method involves the steps of measuring the reflectance of a known material, such as single crystal silicon or aluminum specimen, at the desired wavelength, computing the value of absolute reflectance from .Iadd.the index of refraction and .Iaddend.absorption data available in .[.myriads of.]. handbooks, and then dividing the absolute value .[.by.]. .Iadd.into .Iaddend.the measured value to derive a .[.product of all optical system coefficients.]. .Iadd.system efficiency coefficient.Iaddend.. This value of the .[.coefficients.]. .Iadd.coefficient .Iaddend.is stored.
  • FIG. 1 is a schematic drawing illustrating a reflective microscope and detector processing apparatus for ultraviolet examinations
  • FIG. 1 illustrates a typical microscope for measuring reflectance in the ultraviolet range. Since the material used in the construction of typical refractive lenses .[.chromatic or.]. is opaque to UV radiation, .[.only.]. reflective optical devices .[.may.]. .Iadd.should .Iaddend.be used. Hence, a UV source 10 with known output energy, such as a deuterium discharge tube, with output beam condensed by a small iris 12 is reflected from a planar quartz beam splitter 14 into a reflective objective lens 16 which focuses the UV beam onto a specimen 18. The image from the specimen 18 is magnified by the reflective objective and, after passing through the planar quartz beam splitter 14, is focused into a monochromator 20 where the image beam is passed through a narrow slit to isolate a narrow band of wavelengths before detection.
  • a UV source 10 with known output energy such as a deuterium discharge tube
  • the detected image beam after being converted by an analog-to-digital converter 22, is applied to a computer 24 having a memory 26 and an input-output device 28, such as a keyboard terminal.
  • all optical elements such as the beam splitter 14, the several reflective surfaces of the objective lens 16 and the internal optical elements in the monochromator 20, absorb energy from the incident radiating beam of the source 10. Further, the absorbed energy varies with variations in the incident wavelength.
  • a value of reflectance can easily be measured with the microscope system, but that is a measured reflectance, mR, which has little value since it includes the unknown system losses resulting from the energy absorption of the optical elements.
  • the type of reflectance of value is the absolute reflectance, aR. the ratio of reflected energy to incident energy, independent of system losses.
  • Absolute reflectance of an unknown material can be determined if one knows the values of both absolute and measured reflectance of a known material at the desired wavelength. With this data, the system losses, or system efficiency coefficient, Z ⁇ , at wavelength ⁇ , is computed by merely dividing the measured value by the absolute value of reflectance.
  • Many reference books list tables of refractive index and absorption of various materials at various .[.frequencies.]. .Iadd.wavelengths .Iaddend.and many also list the values of absolute reflectance at various wavelengths.
  • absolute reflectance values, aR are available or calculable for several pure materials, such as single crystal silicon.
  • the system efficiency coefficient, Z ⁇ at that wavelength is determined by measuring the measured reflectance, mR, and .[.divide.]. .Iadd.dividing .Iaddend.by aR:
  • the determination of absolute reflectance can readily be performed by the computer system illustrated in FIG. 1.
  • the value aR of the known material at the predetermined wavelength is entered through the keyboard 28 into the computer 24 which is programmed to perform the simple division .[.and multiplication.]. shown in Equations (1) and (2) above.
  • the value, aR is stored in the memory 26.
  • the reflectance, mR is then measured of the known material 18 on the microscopy stage and the detected value is stored into the memory 26.
  • the computer 24 then performs Equation (1) and stores the efficiency coefficient, Z ⁇ in memory.

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

A method for determining a value of absolute reflectance of a material at .[.a predetermined.]. .Iadd.any .Iaddend.wavelength, in the ultraviolet range from its measured reflectance which includes system losses contributed by optics, illumination sources, detectors, etc. The method involves the measurement of reflectance from a known material such as single crystal silicon whose absolute reflectance is well known, dividing the measured value by the absolute value to obtain a system efficiency coefficient at the known wavelength and then, without changing the illumination or optics, measuring the reflectance of the unknown material and applying this coefficient to this measured value to obtain its absolute value.

Description

BRIEF SUMMARY OF THE INVENTION
This invention relates to the determination of reflectance from a material and particularly to the determination of absolute reflectance independent of losses in an associated optical system.
Some materials are transparent with very little incident energy being reflected from the surface and some materials are opaque and absorb nearly all incident energy and reflect very little. In many materials the .[.ratio of incident energy to reflected energy, or.]. reflectance.[.,.]. varies according to the wavelength of the incident radiation. For example, silicon as used in electronic microcircuits is transparent to infrared wavelengths, translucent between about one micron and infrared, and opaque to ultraviolet radiation.
It is often necessary to determine the energy absorption of some material with unknown chemical contents. An accurate value for absorption can easily be computed from a knowledge of the absolute reflectance from the unknown material since the incident energy can only be divided into absorption and reflectance. But a value for absolute reflectance is not readily obtainable since any measured value of reflectance at some predetermined wavelength is contaminated by losses contributed by the system optics, such as absorption of lenses, illumination sources, beamsplitters, gratings, detectors, etc., all of which also vary with wavelengths.
The object of this invention is to determine the absolute reflectance value of a test material at a desired wavelength, from a measured value of reflectance.
Briefly described, the method involves the steps of measuring the reflectance of a known material, such as single crystal silicon or aluminum specimen, at the desired wavelength, computing the value of absolute reflectance from .Iadd.the index of refraction and .Iaddend.absorption data available in .[.myriads of.]. handbooks, and then dividing the absolute value .[.by.]. .Iadd.into .Iaddend.the measured value to derive a .[.product of all optical system coefficients.]. .Iadd.system efficiency coefficient.Iaddend.. This value of the .[.coefficients.]. .Iadd.coefficient .Iaddend.is stored. An unknown material is then tested with the same unchanged optical system and the same wavelength to obtain a measured reflectance value which, when .[.multiplied.]. .Iadd.divided .Iaddend.by the stored coefficient, yields the absolute reflectance value of the unknown material.
BRIEF DESCRIPTION OF THE DRAWINGS
In the drawings which illustrate the preferred embodiment of the invention:
FIG. 1 is a schematic drawing illustrating a reflective microscope and detector processing apparatus for ultraviolet examinations; and
FIG. 2 illustrate the steps for determining absolute reflectance of an unknown material.
DETAILED DESCRIPTION
FIG. 1 illustrates a typical microscope for measuring reflectance in the ultraviolet range. Since the material used in the construction of typical refractive lenses .[.chromatic or.]. is opaque to UV radiation, .[.only.]. reflective optical devices .[.may.]. .Iadd.should .Iaddend.be used. Hence, a UV source 10 with known output energy, such as a deuterium discharge tube, with output beam condensed by a small iris 12 is reflected from a planar quartz beam splitter 14 into a reflective objective lens 16 which focuses the UV beam onto a specimen 18. The image from the specimen 18 is magnified by the reflective objective and, after passing through the planar quartz beam splitter 14, is focused into a monochromator 20 where the image beam is passed through a narrow slit to isolate a narrow band of wavelengths before detection.
The detected image beam, after being converted by an analog-to-digital converter 22, is applied to a computer 24 having a memory 26 and an input-output device 28, such as a keyboard terminal.
When the microscope system of FIG. 1 is used for measuring reflectances, all optical elements such as the beam splitter 14, the several reflective surfaces of the objective lens 16 and the internal optical elements in the monochromator 20, absorb energy from the incident radiating beam of the source 10. Further, the absorbed energy varies with variations in the incident wavelength.
A value of reflectance can easily be measured with the microscope system, but that is a measured reflectance, mR, which has little value since it includes the unknown system losses resulting from the energy absorption of the optical elements. The type of reflectance of value is the absolute reflectance, aR. the ratio of reflected energy to incident energy, independent of system losses.
Absolute reflectance of an unknown material can be determined if one knows the values of both absolute and measured reflectance of a known material at the desired wavelength. With this data, the system losses, or system efficiency coefficient, Zλ, at wavelength λ, is computed by merely dividing the measured value by the absolute value of reflectance. Many reference books list tables of refractive index and absorption of various materials at various .[.frequencies.]. .Iadd.wavelengths .Iaddend.and many also list the values of absolute reflectance at various wavelengths. Thus, absolute reflectance values, aR, are available or calculable for several pure materials, such as single crystal silicon.
With knowledge of an absolute reflectance value, aR, of a particular pure material at some known wavelength λ, the system efficiency coefficient, Zλ at that wavelength, is determined by measuring the measured reflectance, mR, and .[.divide.]. .Iadd.dividing .Iaddend.by aR:
Zλ=mR/aR                                            (1)
To determine the absolute reflectance, aRx, of a material, x, measure the .[.measured.]. reflectance, mRx, of that unknown material, x, at the same wavelength, λ, and with the same optical system, and .[.multiply.]. .Iadd.divide .Iaddend.the results by the system efficiency coefficient, Zλ.
.[.aRx=mRx(Zλ).]. .Iadd.aRx=mRx/Zλ.Iaddend.  (2)
The determination of absolute reflectance can readily be performed by the computer system illustrated in FIG. 1. The value aR of the known material at the predetermined wavelength is entered through the keyboard 28 into the computer 24 which is programmed to perform the simple division .[.and multiplication.]. shown in Equations (1) and (2) above. The value, aR is stored in the memory 26. The reflectance, mR is then measured of the known material 18 on the microscopy stage and the detected value is stored into the memory 26. The computer 24 then performs Equation (1) and stores the efficiency coefficient, Zλ in memory. Without making any changes in the energy source or the optical system, the known material 18 is replaced with the unknown material, x, and the reflectivity is measured to obtain the value, mRx, which is applied to the computer 24 along with the efficiency coefficient Zλ, in memory. The computer performs the .[.multiplication.]. .Iadd.division .Iaddend.of Equation (2) to obtain the absolute reflectance, aRx of the unknown material, x.

Claims (5)

I claim:
1. A method for determining an absolute reflectance of material from a microscopic measurement of its measured reflectance in the ultraviolet radiation range, said method comprising the steps of:
determining a value of absolute reflectance of a known material at a predetermined wavelength;
measuring the reflectance of said known material to obtain a value of measured reflectance with a microscope illuminated with radiation at said predetermined wavelength;
with said values of absolute reflectance and measured reflectance, calculating an efficiency coefficient representing all absorption and losses caused by the microscope optical system, its reflectance detectors and its illumination system at said predetermined wavelength;
measuring the reflectance of an unknown material to obtain a second value of measured reflectance with said microscope illuminated with said radiation at said predetermined wavelength;
applying said efficiency coefficient to said second value of measured reflectance to obtain a value of absolute reflectance of said unknown material.
2. The method claimed in claim 1 wherein said step of applying includes the step of .[.multiplying.]. .Iadd.dividing .Iaddend.said second value by said efficiency coefficient.
3. The method claimed in claim 2 wherein said microscope is a reflecting microscope.
4. The method claimed in claim 3 wherein said predetermined wavelength is in the ultraviolet radiation range.
5. The method claimed in claim 2 wherein the determined values of absolute reflectance of said known material, said value of measured reflectance of said known material and said value of measured reflectance of said unknown material are stored in a memory of a computer that performs the step of calculating said efficiency coefficient and said value of absolute reflectance of said unknown material.
US08/111,298 1990-02-01 1993-08-23 Method for determining absolute reflectance of a material in the ultraviolet range Expired - Lifetime USRE34783E (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US08/111,298 USRE34783E (en) 1990-02-01 1993-08-23 Method for determining absolute reflectance of a material in the ultraviolet range

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/473,649 US5045704A (en) 1990-02-01 1990-02-01 Method for determining absolute reflectance of a material in the ultraviolet range
US08/111,298 USRE34783E (en) 1990-02-01 1993-08-23 Method for determining absolute reflectance of a material in the ultraviolet range

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US07/473,649 Reissue US5045704A (en) 1990-02-01 1990-02-01 Method for determining absolute reflectance of a material in the ultraviolet range

Publications (1)

Publication Number Publication Date
USRE34783E true USRE34783E (en) 1994-11-08

Family

ID=23880429

Family Applications (2)

Application Number Title Priority Date Filing Date
US07/473,649 Ceased US5045704A (en) 1990-02-01 1990-02-01 Method for determining absolute reflectance of a material in the ultraviolet range
US08/111,298 Expired - Lifetime USRE34783E (en) 1990-02-01 1993-08-23 Method for determining absolute reflectance of a material in the ultraviolet range

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US07/473,649 Ceased US5045704A (en) 1990-02-01 1990-02-01 Method for determining absolute reflectance of a material in the ultraviolet range

Country Status (1)

Country Link
US (2) US5045704A (en)

Cited By (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5717216A (en) * 1996-10-16 1998-02-10 Reynolds Metals Company Thickness gauging using ultraviolet light absorption
US5747813A (en) * 1992-06-16 1998-05-05 Kla-Tencop. Corporation Broadband microspectro-reflectometer
US5805285A (en) * 1992-09-18 1998-09-08 J.A. Woollam Co. Inc. Multiple order dispersive optics system and method of use
US6181427B1 (en) 1998-07-10 2001-01-30 Nanometrics Incorporated Compact optical reflectometer system
US6381009B1 (en) 1999-06-29 2002-04-30 Nanometrics Incorporated Elemental concentration measuring methods and instruments
US6713753B1 (en) 2001-07-03 2004-03-30 Nanometrics Incorporated Combination of normal and oblique incidence polarimetry for the characterization of gratings
US6795184B1 (en) 2001-04-06 2004-09-21 J.A. Woollam Co., Inc Odd bounce image rotation system in ellipsometer systems
US20050002037A1 (en) * 2003-01-16 2005-01-06 Harrison Dale A. Vacuum ultraviolet referencing reflectometer
US20050006590A1 (en) * 2003-01-16 2005-01-13 Harrison Dale A. Broad band referencing reflectometer
US6898537B1 (en) 2001-04-27 2005-05-24 Nanometrics Incorporated Measurement of diffracting structures using one-half of the non-zero diffracted orders
US6949462B1 (en) 2002-04-04 2005-09-27 Nanometrics Incorporated Measuring an alignment target with multiple polarization states
US6982793B1 (en) 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
US6987566B1 (en) 2002-11-27 2006-01-17 Itt Manufacturing Enterprises, Inc. Methods and apparatus for analyzing mirror reflectance
US6992764B1 (en) 2002-09-30 2006-01-31 Nanometrics Incorporated Measuring an alignment target with a single polarization state
US7026626B2 (en) 2003-01-16 2006-04-11 Metrosol, Inc. Semiconductor processing techniques utilizing vacuum ultraviolet reflectometer
US7061615B1 (en) 2001-09-20 2006-06-13 Nanometrics Incorporated Spectroscopically measured overlay target
US7067818B2 (en) 2003-01-16 2006-06-27 Metrosol, Inc. Vacuum ultraviolet reflectometer system and method
US7075649B1 (en) 1995-09-20 2006-07-11 J.A. Woollam Co. Discrete polarization state rotatable compensator spectroscopic ellipsometer system, and method of calibration
US7084978B1 (en) 2003-04-03 2006-08-01 J.A. Woollam Co., Inc. Sample orientation system and method
US7115858B1 (en) 2000-09-25 2006-10-03 Nanometrics Incorporated Apparatus and method for the measurement of diffracting structures
US7136162B1 (en) 2002-10-15 2006-11-14 J.A. Woollam Co., Inc. Alignment of ellipsometer beam to sample surface
US7193710B1 (en) 1995-09-20 2007-03-20 J.A. Woollam Co., Inc. Rotating or rotatable compensator spectroscopic ellipsometer system including multiple element lenses
US7230699B1 (en) 2002-10-15 2007-06-12 J.A. Woollam Co., Inc. Sample orientation system and method
US20070181793A1 (en) * 2004-08-11 2007-08-09 Harrison Dale A Method and apparatus for accurate calibration of VUV reflectometer
US20070182970A1 (en) * 2004-08-11 2007-08-09 Harrison Dale A Method and apparatus for performing highly accurate thin film measurements
US20070181795A1 (en) * 2004-08-11 2007-08-09 Phillip Walsh Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US20070181794A1 (en) * 2004-08-11 2007-08-09 Phillip Walsh Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US20070247729A1 (en) * 2006-04-25 2007-10-25 Rudolph Technologies, Inc. Reflective objective
US7304737B1 (en) 1995-09-20 2007-12-04 J.A. Woollam Co., Inc Rotating or rotatable compensator system providing aberation corrected electromagnetic raadiation to a spot on a sample at multiple angles of a incidence
US7304792B1 (en) 2003-08-25 2007-12-04 J.A. Woollam Co., Inc. System for sequentially providing aberation corrected electromagnetic radiation to a spot on a sample at multiple angles of incidence
US7333198B1 (en) 2003-04-03 2008-02-19 J.A. Woollam Co., Inc. Sample orientation system and method
US7345762B1 (en) 2000-05-30 2008-03-18 J.A. Woollam Co., Inc. Control of beam spot size in ellipsometer and the like systems
US20080117413A1 (en) * 2000-03-21 2008-05-22 Liphardt Martin M Sample orientation system and method
US7518725B1 (en) 1995-09-20 2009-04-14 J.A. Woollam Co., Inc. Temperature controlled lens
US20090103094A1 (en) * 2003-02-28 2009-04-23 Hilfiker James N Ellipsometric investigation and analysis of textured samples
US7535566B1 (en) 2000-09-05 2009-05-19 J.A. Woollam Co., Inc. Beam chromatic shifting and directing means
US20090219537A1 (en) * 2008-02-28 2009-09-03 Phillip Walsh Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths
US7663097B2 (en) 2004-08-11 2010-02-16 Metrosol, Inc. Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US20100277741A1 (en) * 2007-04-09 2010-11-04 Jordan Valley Semiconductors Ltd. Combined optical metrology techniques
US20100290033A1 (en) * 2003-01-16 2010-11-18 Jordan Valley Semiconductors Ltd. Method and System for Using Reflectometry Below Deep Ultra-Violet (DUV) Wavelengths for Measuring Properties of Diffracting or Scattering Structures on Substrate Work Pieces
US20100294922A1 (en) * 2009-05-22 2010-11-25 Hurst Jeffrey B Automated calibration methodology for VUV metrology system
US8169611B2 (en) 2009-02-27 2012-05-01 University Of Nebraska Board Of Regents Terahertz-infrared ellipsometer system, and method of use
US8248607B1 (en) * 2009-08-04 2012-08-21 J.A. Woollam Co., Inc. Empirical correction for spectroscopic ellipsometric measurements of rough or textured surfaces
US8416408B1 (en) 2009-02-27 2013-04-09 J.A. Woollam Co., Inc. Terahertz-infrared ellipsometer system, and method of use
US8488119B2 (en) 2009-02-27 2013-07-16 J.A. Woollam Co., Inc. Terahertz-infrared ellipsometer system, and method of use
US8565379B2 (en) 2011-03-14 2013-10-22 Jordan Valley Semiconductors Ltd. Combining X-ray and VUV analysis of thin film layers
US8564777B1 (en) 2010-08-16 2013-10-22 J.A. Woollam Co., Inc. System and method for compensating detector non-idealities
US8570513B2 (en) 2003-02-28 2013-10-29 J.A. Woollam Co., Inc. Ellipsometric investigation and analysis of textured samples
US8867041B2 (en) 2011-01-18 2014-10-21 Jordan Valley Semiconductor Ltd Optical vacuum ultra-violet wavelength nanoimprint metrology
US8934096B2 (en) 2009-02-27 2015-01-13 University Of Nebraska Board Of Regents Terahertz-infrared ellipsometer system, and method of use
US9121757B2 (en) 2009-02-27 2015-09-01 J.A. Woollam Co., Inc. Terahertz ellipsometer system, and method of use

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486701A (en) * 1992-06-16 1996-01-23 Prometrix Corporation Method and apparatus for measuring reflectance in two wavelength bands to enable determination of thin film thickness
US5517315A (en) * 1993-10-29 1996-05-14 The United States Of America As Represented By The Secretary Of The Navy Reflectometer employing an integrating sphere and lens-mirror concentrator
US5619041A (en) * 1994-06-01 1997-04-08 Bodenseewerk Perkin-Elmer Gmbh Atomic absorption spectrometer for measuring the mercury concentration in a sample
US5517032A (en) * 1994-07-01 1996-05-14 Transoptics, Inc. Thin film thickness measuring system
DE19638809C2 (en) * 1996-09-20 2000-05-18 Storz Karl Gmbh & Co Kg Device for testing a PDD or PDT system and / or for training on such a system
JP3555400B2 (en) * 1997-08-28 2004-08-18 ミノルタ株式会社 Reflection characteristic measuring device
US5991022A (en) * 1997-12-09 1999-11-23 N&K Technology, Inc. Reflectance spectrophotometric apparatus with toroidal mirrors
US7274450B1 (en) 2000-03-21 2007-09-25 J.A. Woollam Co., Inc Sample entry purge system in spectrophotometer, ellipsometer, polarimeter and the like systems
US7821655B2 (en) 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
US20080129986A1 (en) * 2006-11-30 2008-06-05 Phillip Walsh Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientations
JP5393446B2 (en) * 2007-02-26 2014-01-22 オリンパスメディカルシステムズ株式会社 Image acquisition device
DE102009058662A1 (en) * 2009-12-16 2011-06-22 Karl Storz GmbH & Co. KG, 78532 Method for testing an optical inspection system
US9681802B2 (en) 2014-06-06 2017-06-20 Abbott Medical Optics Inc. Fast absolute-reflectance method for the determination of tear film lipid layer thickness
US9456741B2 (en) 2014-06-06 2016-10-04 Abbott Medical Optics Inc. Method for rapid calculation of tear film lipid and aqueous layer thickness and ocular surface refractive index from interferometry spectra
US10368738B2 (en) * 2014-06-06 2019-08-06 Johnson & Johnson Surgical Vision, Inc. Fast absolute-reflectance method for the determination of tear film lipid layer thickness

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3751643A (en) * 1972-05-23 1973-08-07 Ibm System for performing spectral analyses under computer control
US4035085A (en) * 1973-06-29 1977-07-12 Ppg Industries, Inc. Method and apparatus for comparing light reflectance of a sample against a standard
US4455090A (en) * 1979-07-26 1984-06-19 The Wiggins Teape Group Limited Apparatus for measuring surface reflectance characteristics
US4575252A (en) * 1982-10-29 1986-03-11 Shimadzu Corporation Apparatus for measuring absolute reflectance
JPS6413438A (en) * 1987-07-08 1989-01-18 Hitachi Ltd Measuring instrument for absolute reflection factor in ultraviolet range
US4899055A (en) * 1988-05-12 1990-02-06 Tencor Instruments Thin film thickness measuring method
US5101111A (en) * 1989-07-13 1992-03-31 Dainippon Screen Mfg. Co., Ltd. Method of measuring thickness of film with a reference sample having a known reflectance
US5120966A (en) * 1988-07-12 1992-06-09 Dainippon Screen Mfg. Co., Ltd. Method of and apparatus for measuring film thickness

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3751643A (en) * 1972-05-23 1973-08-07 Ibm System for performing spectral analyses under computer control
US4035085A (en) * 1973-06-29 1977-07-12 Ppg Industries, Inc. Method and apparatus for comparing light reflectance of a sample against a standard
US4455090A (en) * 1979-07-26 1984-06-19 The Wiggins Teape Group Limited Apparatus for measuring surface reflectance characteristics
US4575252A (en) * 1982-10-29 1986-03-11 Shimadzu Corporation Apparatus for measuring absolute reflectance
JPS6413438A (en) * 1987-07-08 1989-01-18 Hitachi Ltd Measuring instrument for absolute reflection factor in ultraviolet range
US4899055A (en) * 1988-05-12 1990-02-06 Tencor Instruments Thin film thickness measuring method
US5120966A (en) * 1988-07-12 1992-06-09 Dainippon Screen Mfg. Co., Ltd. Method of and apparatus for measuring film thickness
US5101111A (en) * 1989-07-13 1992-03-31 Dainippon Screen Mfg. Co., Ltd. Method of measuring thickness of film with a reference sample having a known reflectance

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Barkley, John R., "Measurement and Analysis of Reference Spectra of SiP2," Applied Optics vol. No. 9, (Sep. 1972) pp. 1928-1935.
Barkley, John R., Measurement and Analysis of Reference Spectra of SiP 2 , Applied Optics vol. No. 9, (Sep. 1972) pp. 1928 1935. *
Book by Dr. Horst Piller, Microscope Photometry, published by Springer Verlag Berlin Heidalberg (1977), Chapter 9. *
Book by Dr. Horst Piller, Microscope Photometry, published by Springer-Verlag Berlin Heidalberg (1977), Chapter 9.

Cited By (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747813A (en) * 1992-06-16 1998-05-05 Kla-Tencop. Corporation Broadband microspectro-reflectometer
US5805285A (en) * 1992-09-18 1998-09-08 J.A. Woollam Co. Inc. Multiple order dispersive optics system and method of use
US7518725B1 (en) 1995-09-20 2009-04-14 J.A. Woollam Co., Inc. Temperature controlled lens
US7193710B1 (en) 1995-09-20 2007-03-20 J.A. Woollam Co., Inc. Rotating or rotatable compensator spectroscopic ellipsometer system including multiple element lenses
US7304737B1 (en) 1995-09-20 2007-12-04 J.A. Woollam Co., Inc Rotating or rotatable compensator system providing aberation corrected electromagnetic raadiation to a spot on a sample at multiple angles of a incidence
US7099006B1 (en) 1995-09-20 2006-08-29 J.A. Woollam Co., Inc Ellipsometer or polarimeter and the like system with beam chromatic shifting and directing means
US7075649B1 (en) 1995-09-20 2006-07-11 J.A. Woollam Co. Discrete polarization state rotatable compensator spectroscopic ellipsometer system, and method of calibration
US5717216A (en) * 1996-10-16 1998-02-10 Reynolds Metals Company Thickness gauging using ultraviolet light absorption
US6181427B1 (en) 1998-07-10 2001-01-30 Nanometrics Incorporated Compact optical reflectometer system
US6381009B1 (en) 1999-06-29 2002-04-30 Nanometrics Incorporated Elemental concentration measuring methods and instruments
US7619752B2 (en) 2000-03-21 2009-11-17 J. A. Woollam Co., Inc. Sample orientation system and method
US20080117413A1 (en) * 2000-03-21 2008-05-22 Liphardt Martin M Sample orientation system and method
US7345762B1 (en) 2000-05-30 2008-03-18 J.A. Woollam Co., Inc. Control of beam spot size in ellipsometer and the like systems
US7535566B1 (en) 2000-09-05 2009-05-19 J.A. Woollam Co., Inc. Beam chromatic shifting and directing means
US7372565B1 (en) 2000-09-25 2008-05-13 Nanometrics Incorporated Spectrometer measurement of diffracting structures
US7115858B1 (en) 2000-09-25 2006-10-03 Nanometrics Incorporated Apparatus and method for the measurement of diffracting structures
US6795184B1 (en) 2001-04-06 2004-09-21 J.A. Woollam Co., Inc Odd bounce image rotation system in ellipsometer systems
US6898537B1 (en) 2001-04-27 2005-05-24 Nanometrics Incorporated Measurement of diffracting structures using one-half of the non-zero diffracted orders
US6713753B1 (en) 2001-07-03 2004-03-30 Nanometrics Incorporated Combination of normal and oblique incidence polarimetry for the characterization of gratings
US7061615B1 (en) 2001-09-20 2006-06-13 Nanometrics Incorporated Spectroscopically measured overlay target
US7236244B1 (en) 2002-04-04 2007-06-26 Nanometrics Incorporated Alignment target to be measured with multiple polarization states
US6982793B1 (en) 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
US7230705B1 (en) 2002-04-04 2007-06-12 Nanometrics Incorporated Alignment target with designed in offset
US6949462B1 (en) 2002-04-04 2005-09-27 Nanometrics Incorporated Measuring an alignment target with multiple polarization states
US6992764B1 (en) 2002-09-30 2006-01-31 Nanometrics Incorporated Measuring an alignment target with a single polarization state
US7136162B1 (en) 2002-10-15 2006-11-14 J.A. Woollam Co., Inc. Alignment of ellipsometer beam to sample surface
US7230699B1 (en) 2002-10-15 2007-06-12 J.A. Woollam Co., Inc. Sample orientation system and method
US6987566B1 (en) 2002-11-27 2006-01-17 Itt Manufacturing Enterprises, Inc. Methods and apparatus for analyzing mirror reflectance
US7126131B2 (en) 2003-01-16 2006-10-24 Metrosol, Inc. Broad band referencing reflectometer
US20100051822A1 (en) * 2003-01-16 2010-03-04 Metrosol, Inc. Broad band referencing reflectometer
US20070030488A1 (en) * 2003-01-16 2007-02-08 Metrosol, Inc. Broad band referencing reflectometer
US8564780B2 (en) 2003-01-16 2013-10-22 Jordan Valley Semiconductors Ltd. Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces
US20050002037A1 (en) * 2003-01-16 2005-01-06 Harrison Dale A. Vacuum ultraviolet referencing reflectometer
US8054453B2 (en) 2003-01-16 2011-11-08 Jordan Valley Semiconductors Ltd. Broad band referencing reflectometer
US8014000B2 (en) 2003-01-16 2011-09-06 Jordan Valley Semiconductors Ltd. Broad band referencing reflectometer
US7271394B2 (en) 2003-01-16 2007-09-18 Metrosol, Inc. Vacuum ultraviolet reflectometer having collimated beam
US20100328648A1 (en) * 2003-01-16 2010-12-30 Jordan Valley Semiconductors Ltd. Broad band referencing reflectometer
US20100290033A1 (en) * 2003-01-16 2010-11-18 Jordan Valley Semiconductors Ltd. Method and System for Using Reflectometry Below Deep Ultra-Violet (DUV) Wavelengths for Measuring Properties of Diffracting or Scattering Structures on Substrate Work Pieces
US20050006590A1 (en) * 2003-01-16 2005-01-13 Harrison Dale A. Broad band referencing reflectometer
US7189973B2 (en) 2003-01-16 2007-03-13 Metrosol, Inc. Vacuum ultraviolet reflectometer integrated with processing system
US20060208198A1 (en) * 2003-01-16 2006-09-21 Metrosol, Inc. Vacuum ultraviolet reflectometer integrated with processing system
US20060192958A1 (en) * 2003-01-16 2006-08-31 Metrosol, Inc. Vacuum ultraviolet reflectometer having collimated beam
US7446876B2 (en) 2003-01-16 2008-11-04 Metrosol Inc. Vacuum ultra-violet reflectometer with stray light correction
US7067818B2 (en) 2003-01-16 2006-06-27 Metrosol, Inc. Vacuum ultraviolet reflectometer system and method
US7391030B2 (en) 2003-01-16 2008-06-24 Metrosol, Inc. Broad band referencing reflectometer
US7394551B2 (en) 2003-01-16 2008-07-01 Metrosol, Inc. Vacuum ultraviolet referencing reflectometer
US7026626B2 (en) 2003-01-16 2006-04-11 Metrosol, Inc. Semiconductor processing techniques utilizing vacuum ultraviolet reflectometer
US8570513B2 (en) 2003-02-28 2013-10-29 J.A. Woollam Co., Inc. Ellipsometric investigation and analysis of textured samples
US20090103094A1 (en) * 2003-02-28 2009-04-23 Hilfiker James N Ellipsometric investigation and analysis of textured samples
US8059276B2 (en) 2003-02-28 2011-11-15 J.A. Woollam Co., Inc Ellipsometric investigation and analysis of textured samples
US7333198B1 (en) 2003-04-03 2008-02-19 J.A. Woollam Co., Inc. Sample orientation system and method
US7084978B1 (en) 2003-04-03 2006-08-01 J.A. Woollam Co., Inc. Sample orientation system and method
US7304792B1 (en) 2003-08-25 2007-12-04 J.A. Woollam Co., Inc. System for sequentially providing aberation corrected electromagnetic radiation to a spot on a sample at multiple angles of incidence
US20070181793A1 (en) * 2004-08-11 2007-08-09 Harrison Dale A Method and apparatus for accurate calibration of VUV reflectometer
US7663097B2 (en) 2004-08-11 2010-02-16 Metrosol, Inc. Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US7399975B2 (en) * 2004-08-11 2008-07-15 Metrosol, Inc. Method and apparatus for performing highly accurate thin film measurements
US7804059B2 (en) 2004-08-11 2010-09-28 Jordan Valley Semiconductors Ltd. Method and apparatus for accurate calibration of VUV reflectometer
US20070181795A1 (en) * 2004-08-11 2007-08-09 Phillip Walsh Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US7511265B2 (en) 2004-08-11 2009-03-31 Metrosol, Inc. Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US8119991B2 (en) 2004-08-11 2012-02-21 Jordan Valley Semiconductors Ltd. Method and apparatus for accurate calibration of VUV reflectometer
US20100301225A1 (en) * 2004-08-11 2010-12-02 Jordan Valley Semiconductors Ltd. Method and Apparatus for Accurate Calibration of VUV Reflectometer
US7282703B2 (en) 2004-08-11 2007-10-16 Metrosol, Inc. Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US20070182970A1 (en) * 2004-08-11 2007-08-09 Harrison Dale A Method and apparatus for performing highly accurate thin film measurements
US20070181794A1 (en) * 2004-08-11 2007-08-09 Phillip Walsh Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US20070247729A1 (en) * 2006-04-25 2007-10-25 Rudolph Technologies, Inc. Reflective objective
US20100277741A1 (en) * 2007-04-09 2010-11-04 Jordan Valley Semiconductors Ltd. Combined optical metrology techniques
US7948631B2 (en) 2008-02-28 2011-05-24 Jordan Valley Semiconductors Ltd. Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths
US20090219537A1 (en) * 2008-02-28 2009-09-03 Phillip Walsh Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths
US8169611B2 (en) 2009-02-27 2012-05-01 University Of Nebraska Board Of Regents Terahertz-infrared ellipsometer system, and method of use
US8416408B1 (en) 2009-02-27 2013-04-09 J.A. Woollam Co., Inc. Terahertz-infrared ellipsometer system, and method of use
US8488119B2 (en) 2009-02-27 2013-07-16 J.A. Woollam Co., Inc. Terahertz-infrared ellipsometer system, and method of use
US9121757B2 (en) 2009-02-27 2015-09-01 J.A. Woollam Co., Inc. Terahertz ellipsometer system, and method of use
US8934096B2 (en) 2009-02-27 2015-01-13 University Of Nebraska Board Of Regents Terahertz-infrared ellipsometer system, and method of use
US8705032B2 (en) 2009-02-27 2014-04-22 J.A. Woollam Co., Inc Terahertz-infrared ellipsometer system, and method of use
US9041927B1 (en) 2009-02-27 2015-05-26 J.A. Woollam Co., Inc Terahertz-infrared ellipsometer system, and method of use
US8153987B2 (en) 2009-05-22 2012-04-10 Jordan Valley Semiconductors Ltd. Automated calibration methodology for VUV metrology system
US20100294922A1 (en) * 2009-05-22 2010-11-25 Hurst Jeffrey B Automated calibration methodology for VUV metrology system
US8248607B1 (en) * 2009-08-04 2012-08-21 J.A. Woollam Co., Inc. Empirical correction for spectroscopic ellipsometric measurements of rough or textured surfaces
US8564777B1 (en) 2010-08-16 2013-10-22 J.A. Woollam Co., Inc. System and method for compensating detector non-idealities
US8867041B2 (en) 2011-01-18 2014-10-21 Jordan Valley Semiconductor Ltd Optical vacuum ultra-violet wavelength nanoimprint metrology
US8565379B2 (en) 2011-03-14 2013-10-22 Jordan Valley Semiconductors Ltd. Combining X-ray and VUV analysis of thin film layers

Also Published As

Publication number Publication date
US5045704A (en) 1991-09-03

Similar Documents

Publication Publication Date Title
USRE34783E (en) Method for determining absolute reflectance of a material in the ultraviolet range
US5120966A (en) Method of and apparatus for measuring film thickness
US4984894A (en) Method of and apparatus for measuring film thickness
US5386119A (en) Apparatus and method for thick wafer measurement
US5543919A (en) Apparatus and method for performing high spatial resolution thin film layer thickness metrology
US4999014A (en) Method and apparatus for measuring thickness of thin films
US5856871A (en) Film thickness mapping using interferometric spectral imaging
KR970011746B1 (en) Thin Film Thickness Measurement Apparatus and Method
US6856384B1 (en) Optical metrology system with combined interferometer and ellipsometer
JPH0791921A (en) Measuring method for film thickness
CN113654661B (en) Spectrometer based on super-surface lens
KR20030041147A (en) Differential numerical aperture methods and device
NL2010211A (en) Inspection apparatus and method.
EP0345773B1 (en) Microspectroscope
US20020024669A1 (en) Spectral ellipsometer having a refractive illuminating optical system
US20090109438A1 (en) Spectroscopic ellipsometer and ellipsometry
US7030978B2 (en) System and method for inspection of a substrate that has a refractive index
US5502560A (en) Analytical sensor using grating light reflection spectroscopy
US5548401A (en) Photomask inspecting method and apparatus
US5303033A (en) Gradient index measuring apparatus
US5517032A (en) Thin film thickness measuring system
JPH0210206A (en) Optical film thickness measuring apparatus
Krasilnikova et al. Spatially resolved spectroscopy for non-uniform thin film coatings: comparison of two dedicated set-ups
WO1996003615A1 (en) Film thickness mapping using interferometric spectral imaging
Kadkhoda et al. Investigations of transmittance and reflectance in the DUV/VUV spectral range

Legal Events

Date Code Title Description
FPAY Fee payment

Year of fee payment: 4

SULP Surcharge for late payment
FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12

RR Request for reexamination filed

Effective date: 20061102

RR Request for reexamination filed

Effective date: 20061102

FPB1 Reexamination decision cancelled all claims