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USD763207S1 - Light emitting diode package - Google Patents

Light emitting diode package Download PDF

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Publication number
USD763207S1
USD763207S1 US29/523,790 US201529523790F USD763207S US D763207 S1 USD763207 S1 US D763207S1 US 201529523790 F US201529523790 F US 201529523790F US D763207 S USD763207 S US D763207S
Authority
US
United States
Prior art keywords
light emitting
emitting diode
diode package
package
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US29/523,790
Inventor
Hou-Te Lin
Chao-Hsiung Chang
Pin-Chuan Chen
Lung-hsin Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Optoelectronic Technology Inc
Original Assignee
Advanced Optoelectronic Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Optoelectronic Technology Inc filed Critical Advanced Optoelectronic Technology Inc
Assigned to ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. reassignment ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANG, CHAO-HSIUNG, CHEN, LUNG-HSIN, CHEN, PIN-CHUAN, LIN, HOU-TE
Application granted granted Critical
Publication of USD763207S1 publication Critical patent/USD763207S1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Description

FIG. 1 is a perspective view of a light emitting diode package showing our new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a left-side, elevational view thereof;
FIG. 5 is a right-side, elevational view thereof;
FIG. 6 is a top plan view thereof; and,
FIG. 7 is a bottom plan view thereof.

Claims (1)

    CLAIM
  1. The ornamental design for a light emitting diode package, as shown and described.
US29/523,790 2015-02-05 2015-04-14 Light emitting diode package Active USD763207S1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201530034760 2015-02-05
CN201530034760 2015-02-05

Publications (1)

Publication Number Publication Date
USD763207S1 true USD763207S1 (en) 2016-08-09

Family

ID=56556390

Family Applications (1)

Application Number Title Priority Date Filing Date
US29/523,790 Active USD763207S1 (en) 2015-02-05 2015-04-14 Light emitting diode package

Country Status (2)

Country Link
US (1) USD763207S1 (en)
TW (1) TWD177216S (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD784935S1 (en) * 2015-03-10 2017-04-25 Toyoda Gosei Co., Ltd. Light emitting diode
TWD212737S (en) 2020-07-06 2021-07-21 晶元光電股份有限公司 Part of light-emitting device

Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107644A (en) * 1997-01-24 2000-08-22 Rohm Co., Ltd. Semiconductor light emitting device
US20030006422A1 (en) * 1997-05-08 2003-01-09 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
US20040041222A1 (en) * 2002-09-04 2004-03-04 Loh Ban P. Power surface mount light emitting die package
USD510914S1 (en) * 2003-07-09 2005-10-25 Nichia Corporation Light emitting diode
USD535264S1 (en) * 2005-11-02 2007-01-16 Supernova Optoelectronics Corp. Electrode layer
USD566056S1 (en) * 2006-12-20 2008-04-08 Cree, Inc. LED chip
USD618637S1 (en) * 2009-10-30 2010-06-29 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD633876S1 (en) * 2009-10-30 2011-03-08 Semi LEDs Optoelectronics Co., Ltd. Light emitting diode device
USD645421S1 (en) * 2010-07-16 2011-09-20 Harvatek Corporation LED base
USD648287S1 (en) * 2011-03-30 2011-11-08 Epistar Corporation Light-emitting diode
US8093605B2 (en) * 2005-08-04 2012-01-10 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device with an electrode covered by an over-coating layer
USD656908S1 (en) * 2011-07-05 2012-04-03 Epistar Corporation Light emitting device
USD668234S1 (en) * 2001-05-24 2012-10-02 Lextar Electornics Corp. LED chip
USD674361S1 (en) * 2012-03-30 2013-01-15 Silitek Electronic (Guangzhou) Co., Ltd. LED package
USD698047S1 (en) * 2009-11-13 2014-01-21 Nichia Corporation Light emitting diode
USD698742S1 (en) * 2012-09-27 2014-02-04 Kabushiki Kaisha Toshiba Light-emitting diode
USD698744S1 (en) * 2012-10-18 2014-02-04 Kabushiki Kaisha Toshiba Light-emitting diode
US8653498B2 (en) * 2010-08-04 2014-02-18 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US8779441B2 (en) * 2009-12-04 2014-07-15 Toyoda Gosei Co., Ltd. Semiconductor light emitting element with first and second electrode openings arranged at a constant distance
USD712851S1 (en) * 2012-12-27 2014-09-09 Lextar Electronics Corporation Light emitting diode package
USD722578S1 (en) * 2013-05-30 2015-02-17 Kabushiki Kaisha Toshiba Light-emitting diode chip

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107644A (en) * 1997-01-24 2000-08-22 Rohm Co., Ltd. Semiconductor light emitting device
US20030006422A1 (en) * 1997-05-08 2003-01-09 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
USD668234S1 (en) * 2001-05-24 2012-10-02 Lextar Electornics Corp. LED chip
US20040041222A1 (en) * 2002-09-04 2004-03-04 Loh Ban P. Power surface mount light emitting die package
USD510914S1 (en) * 2003-07-09 2005-10-25 Nichia Corporation Light emitting diode
US8093605B2 (en) * 2005-08-04 2012-01-10 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device with an electrode covered by an over-coating layer
USD535264S1 (en) * 2005-11-02 2007-01-16 Supernova Optoelectronics Corp. Electrode layer
USD566056S1 (en) * 2006-12-20 2008-04-08 Cree, Inc. LED chip
USD633876S1 (en) * 2009-10-30 2011-03-08 Semi LEDs Optoelectronics Co., Ltd. Light emitting diode device
USD618637S1 (en) * 2009-10-30 2010-06-29 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD698047S1 (en) * 2009-11-13 2014-01-21 Nichia Corporation Light emitting diode
US8779441B2 (en) * 2009-12-04 2014-07-15 Toyoda Gosei Co., Ltd. Semiconductor light emitting element with first and second electrode openings arranged at a constant distance
USD645421S1 (en) * 2010-07-16 2011-09-20 Harvatek Corporation LED base
US8653498B2 (en) * 2010-08-04 2014-02-18 Kabushiki Kaisha Toshiba Semiconductor light emitting device
USD648287S1 (en) * 2011-03-30 2011-11-08 Epistar Corporation Light-emitting diode
USD656908S1 (en) * 2011-07-05 2012-04-03 Epistar Corporation Light emitting device
USD674361S1 (en) * 2012-03-30 2013-01-15 Silitek Electronic (Guangzhou) Co., Ltd. LED package
USD698742S1 (en) * 2012-09-27 2014-02-04 Kabushiki Kaisha Toshiba Light-emitting diode
USD698744S1 (en) * 2012-10-18 2014-02-04 Kabushiki Kaisha Toshiba Light-emitting diode
USD712851S1 (en) * 2012-12-27 2014-09-09 Lextar Electronics Corporation Light emitting diode package
USD722578S1 (en) * 2013-05-30 2015-02-17 Kabushiki Kaisha Toshiba Light-emitting diode chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD784935S1 (en) * 2015-03-10 2017-04-25 Toyoda Gosei Co., Ltd. Light emitting diode
TWD212737S (en) 2020-07-06 2021-07-21 晶元光電股份有限公司 Part of light-emitting device

Also Published As

Publication number Publication date
TWD177216S (en) 2016-07-21

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