US9825073B2 - Enhanced back side illuminated near infrared image sensor - Google Patents
Enhanced back side illuminated near infrared image sensor Download PDFInfo
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- US9825073B2 US9825073B2 US14/286,478 US201414286478A US9825073B2 US 9825073 B2 US9825073 B2 US 9825073B2 US 201414286478 A US201414286478 A US 201414286478A US 9825073 B2 US9825073 B2 US 9825073B2
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Definitions
- the present invention is generally related to image sensors, and more specifically, the present invention is directed to near infrared image sensors.
- Image sensors have become ubiquitous. They are widely used in digital still cameras, cellular phones, security cameras, as well as, medical, automobile, and other applications.
- CMOS complementary metal-oxide-semiconductor
- CIS complementary metal-oxide-semiconductor
- the image sensor chip must typically provide a high quality image in the visible light spectrum as well as have improved sensitivity in the infrared and near infrared portions of the light spectrum.
- FIG. 1 is a schematic illustrating one example of pixel cell that may be included in an example enhanced back side illuminated near infrared image sensor in accordance with the teachings of the present invention.
- FIG. 2 is a cross-section view illustrating a cross-section view of a portion of one example of an example enhanced back side illuminated near infrared image sensor in accordance with the teachings of the present invention.
- FIG. 3 is a diagram illustrating one example of an imaging system including an example enhanced back side illuminated near infrared image sensor including a pixel array in accordance with the teachings of the present invention.
- infrared or near infrared light such as for example light having a wavelength of approximately 850 nm
- a majority of the incident light enters the back side of the semiconductor material, such as for example silicon, propagates through the semiconductor material, is reflected from the front side of the semiconductor material, and then exits back out the back side of the semiconductor material without being absorbed.
- thicker silicon is needed in order to absorb more of the incident infrared or near infrared light.
- the semiconductor material of a typical back side illuminated image sensor is typically thinned in order to improve visible light performance, which degrades infrared or near infrared performance of the image sensor.
- an example image sensor in accordance with the teaching of the present invention features deep trench isolation (DTI) structures combined with total internal reflection and scattering light from a diffuse reflector at the front side of the imaging sensor chip, which defines a light guide for infrared or near infrared light in the semiconductor material, which confines the near infrared light to remain within the semiconductor material until it is finally absorbed, which therefore improves infrared or near infrared sensitivity, as well as reduces optical crosstalk in an image sensor in accordance with the teachings of the present invention.
- DTI deep trench isolation
- a photodiode is disposed proximate to a front side of a semiconductor material to accumulate image charge in response to near infrared light directed into the semiconductor material through a back side of the semiconductor material and through the photodiode.
- a scattering structure is disposed proximate to the front side of the semiconductor material, which causes the light that was not absorbed after a first pass through the photodiode to be scattered by the scattering structure and be directed back through the photodiode and the semiconductor material for multiple passes.
- Deep trench isolation (DTI) structures are disposed in the semiconductor material, which isolate the photodiode in the semiconductor material, as well as define an optical path in the semiconductor material including the photodiode.
- the light that is reflected at the front side of the semiconductor and scattered back through the photodiode in the optical path is totally internally reflected by the DTI structure, which confines the light to remain within the optical path.
- An antireflective coating is disposed on the back side of the semiconductor material such that the light that is directed into the semiconductor material through the back side of the semiconductor material is directed through the antireflective coating.
- the light that is reflected at the front side of the semiconductor that is scattered back through the photodiode in the optical path is also totally internally reflected by the antireflective coating, which confines the light to remain within the optical path until it is absorbed in the semiconductor material in accordance with the teachings of the present invention.
- FIG. 1 is a schematic illustrating one example of pixel cell 100 that may be included in an example enhanced back side illuminated near infrared image sensor 102 in accordance with the teachings of the present invention.
- pixel cell 100 is illustrated as being a four-transistor (“4T”) pixel cell included in image sensor 102 in accordance with the teachings of the invention.
- 4T four-transistor
- pixel cell 100 is one possible example of pixel circuitry architecture for implementing each pixel cell within the pixel array of image sensor 102 of FIG. 1 .
- other examples in accordance with the teachings of the present invention are not necessarily limited to 4T pixel architectures.
- One having ordinary skill in the art having the benefit of the present disclosure will understand that the present teachings are also applicable to 3T designs, 5T designs, and various other pixel architectures in accordance with the teachings of the present invention.
- pixel cell 100 includes a photodiode (“PD”) 104 to accumulate image charge, a transfer transistor T 1 106 , a reset transistor T 2 108 , a floating diffusion (“FD”) 110 , a source-follower (“SF”) transistor T 3 112 , and a select transistor T 4 114 .
- transfer transistor T 1 106 receives a transfer signal TX, which transfers the image charge accumulated in photodiode PD 104 to floating diffusion FD 110 .
- floating diffusion FD 110 may be coupled to a storage capacitor for temporarily storing image charges.
- one or more deep trench isolation (DTI) structures, a diffuse reflector, and an antireflective coating on the back side of the semiconductor material are combined with total internal reflection and scattering light from the diffuse reflector to confine infrared or near infrared light within the semiconductor material until the light is absorbed in accordance with the teachings of the present invention.
- DTI deep trench isolation
- reset transistor T 2 108 is coupled between a power rail VDD and the floating diffusion FD 110 to reset the pixel cell 100 (e.g., discharge or charge the floating diffusion FD 110 and the photodiode PD 104 to a preset voltage) in response to a reset signal RST.
- the floating diffusion FD 110 is coupled to control the gate of SF transistor T 3 .
- SF transistor T 3 is coupled between the power rail VDD and select transistor T 4 .
- SF transistor T 3 operates as a source-follower amplifier providing a high impedance connection to the floating diffusion FD 110 .
- Select transistor T 4 114 selectively couples the output of pixel cell 100 to the readout column bitline 116 in response to a select signal SEL.
- the TX signal, the RST signal, the SEL signal, and the readout pulse voltage which is selectively coupled to the deep trench isolation, are generated by control circuitry, an example of which will be described in further detail below.
- the global shutter signal is coupled to the gate of each transfer transistor T 1 106 in the image sensor 102 to simultaneously commence charge transfer from each pixel's photodiode PD 104 .
- rolling shutter signals may be applied to groups of transfer transistors T 1 106 in accordance with the teachings of the present invention.
- FIG. 2 is a cross-section view illustrating a cross-section view of a portion of one example of an example enhanced back side illuminated near infrared image sensor chip 202 in accordance with the teachings of the present invention.
- image sensor chip 202 of FIG. 2 may be one example of an implementation of image sensor 102 of FIG. 1 and that similarly named and numbered elements referenced below are coupled and function similar to as described above.
- other circuit elements of image sensor 102 shown in FIG. 1 such as for example the various transistors and associated diffusions and doped regions are not shown in detail in FIG. 2 so as not obscure the teachings of the present invention.
- image sensor chip 202 includes a photodiode 204 disposed in a layer of semiconductor material 218 proximate to a front side 220 of the image sensor chip 202 to accumulate image charge in response to light 224 , which is directed into the semiconductor material 218 through a back side 222 of the semiconductor material 218 and through the photodiode 204 as shown.
- semiconductor material 218 includes silicon, polysilicon, or another suitable semiconductor material.
- semiconductor material 218 is also thinned in order provide improved visible light performance of image sensor chip 202 .
- light 224 includes infrared or near infrared light. For instance, in one example, light 224 may have a wavelength of approximately 850 nm.
- image sensor chip 202 also includes deep trench isolation (DTI) structures 228 that are disposed in the semiconductor material 218 , which isolate the photodiodes 204 in the semiconductor material 218 , as well as define an optical waveguide or an optical path 230 for light 224 to propagate through the semiconductor material 218 to the photodiode 204 as shown in accordance with the teachings of the present invention.
- DTI structures 228 extend along a substantial portion of the optical path 230 through the semiconductor material 218 between the back side 222 of the semiconductor material 218 and the photodiode 204 in accordance with the teachings of the present invention.
- the DTI structures 228 are made of a material having a lower refractive index than the semiconductor material 218 , such as for example an oxide material.
- the DTI may also include of other materials that improve dark current performance in accordance with the teachings of the present invention.
- hafnium oxide, tantalum oxide, and even an oxide liner including a poly fill with a negative bias may be included in DTI structures 228 in accordance with the teachings of the present invention.
- the regions 218 N of semiconductor material 218 between DTI structures 228 that include photodiodes 204 includes deep n photodiode implants.
- the regions 218 N of semiconductor material 218 between DTI structures 228 that include photodiodes 204 includes deep photodiode implants having a first polarity of dopants.
- the regions 218 P of semiconductor material 218 between DTI structures 228 that do not include photodiodes 204 include deep p photodiode isolation implants as shown.
- the regions 218 P of semiconductor material 218 between DTI structures 228 that do not include photodiodes 204 include deep photodiode isolation implants having a second polarity of dopants.
- the polarities of the dopants may be reversed in accordance with the teachings of the present invention.
- the substrate polarities and NMOS/PMOS structures may be swapped in accordance with the teachings of the present invention.
- a scattering structure 226 is disposed in a dielectric layer 240 proximate to the front side 220 of the image sensor chip 202 such that the light 224 that is directed into the semiconductor material 218 through the back side 222 of the semiconductor material 218 and through the photodiode 204 that is reflected at the front side 220 of the image sensor chip 202 is scattered by the scattering structure 226 back through the photodiode 204 back into optical path 230 in accordance with the teachings of the present invention.
- scattering structure 226 includes a diffraction grating or the like that is formed in a metal grid that is included in a metal layer in the dielectric layer 240 proximate to the front side 220 of image sensor chip 202 .
- the scattering structure 226 may include any suitable structure that is designed to scatter the light back at a non-normal incidence in accordance with the teachings of the present invention.
- the light 224 that is reflected at the front side 220 of the image sensor chip 202 is scattered back through the photodiode 204 in the optical path 230 , and is then totally internally reflected by the DTI structures 228 .
- the light 224 that is scattered with scattering structure 226 is therefore confined to remain in the semiconductor material 218 within the optical path 230 until the light 224 is absorbed in accordance with the teachings of the present invention.
- an antireflective coating 232 is disposed on the back side 222 of the semiconductor material 218 .
- light 224 is directed through antireflective coating 232 into the back side 222 of semiconductor material 218 as shown.
- the antireflective coating 232 also totally internally reflects the light 224 that is reflected at the front side 220 and scattered by scattering structure 226 back through the photodiode 204 in the optical path 230 .
- antireflective coating 232 further confines light 224 to remain in the semiconductor material 218 within the optical path 230 until the light 224 is absorbed in accordance with the teachings of the present invention.
- the antireflective coating 232 that is above a near infrared pixel cell of the image sensor chip 202 is different from the antireflective coating above a visible light sensitive pixel cell of image sensor chip 202 .
- the antireflective coating 232 is designed specifically to minimize reflection of incident near infrared light and maximize total internal reflection in accordance with the teachings of the present invention.
- image sensor chip 202 includes a color filter array (CFA) 234 disposed proximate to the antireflective coating 232 , and an array of microlenses 236 disposed proximate to the color filter array 234 on the back side 222 of image sensor chip 202 .
- color filter array 234 may include a combination of red, green, blue, and infrared or near infrared color filters that are arranged in a suitable pattern for image sensor chip 202 . It is appreciated that other colors may also be included in other examples.
- microlens 238 in the array of microlenses 236 helps to increase the total internal reflection, and therefore reduce the escape of scattered light 224 from the optical path 230 in semiconductor material 218 , which therefore increases the absorbance of light 224 in semiconductor material 218 to improve the modulation transfer function of image sensor chip 202 in accordance with the teachings of the present invention.
- regions 242 may also be formed in dielectric layer 240 proximate to the DTI structures 228 as shown to further extend the optical path 230 into the dielectric layer 240 and improve crosstalk suppression in the dielectric layer 240 in accordance with the teachings of the present invention.
- highly refractive regions 242 may be formed by an etch or other suitable process.
- the scattering structure 226 scatters the light 224 that is reflected at the front side 220 of the semiconductor material 218 near a critical angle to achieve total internal reflection at the interfaces of the semiconductor material 218 with the DTI structures 228 and the antireflective coating 232 .
- the light 224 is substantially confined to remain within the optical path 230 in the semiconductor material 218 until it is absorbed in accordance with the teachings of the present invention.
- image sensor chip 202 not only has improved modulation transfer function performance for infrared or near infrared light 224 since substantially all of the light 224 is now absorbed, but image sensor chip 202 also has improved crosstalk performance since light 224 does not leak into neighboring pixels with the isolation provided with DTI structures 228 in accordance with the teachings of the present invention.
- FIG. 3 is a diagram illustrating one example of an imaging system 342 including an enhanced back side illuminated near infrared image sensor 302 in accordance with the teachings of the present invention.
- imaging system 342 includes image sensor 302 coupled to control circuitry 348 and readout circuitry 344 , which is coupled to function logic 346 .
- image sensor 302 includes a pixel array that is a two-dimensional (2D) array of pixel cells (e.g., pixel cells P 1 , P 2 . . . , Pn).
- each pixel cell is a CMOS imaging pixel.
- the pixel cells P 1 , P 2 , . . . Pn in the pixel array 492 may be examples of pixel cell 100 of FIG. 1 and that similarly named and numbered elements referenced below are coupled and function similar to as described above.
- each pixel cell is arranged into a row (e.g., rows R 1 to Ry) and a column (e.g., column C 1 to Cx) to acquire image data of a person, place, object, etc., which can then be used to render a 2D image of the person, place, object, etc.
- a row e.g., rows R 1 to Ry
- a column e.g., column C 1 to Cx
- readout circuitry 344 After each pixel cell has accumulated its image data or image charge, the image data is readout by readout circuitry 344 through readout column bitlines 316 and then transferred to function logic 346 .
- readout circuitry 344 may include amplification circuitry, analog-to-digital (ADC) conversion circuitry, or otherwise.
- Function logic 346 may simply store the image data or even manipulate the image data by applying post image effects (e.g., crop, rotate, remove red eye, adjust brightness, adjust contrast, or otherwise).
- readout circuitry 344 may readout a row of image data at a time along readout column bitlines 316 (illustrated) or may readout the image data using a variety of other techniques (not illustrated), such as a serial readout or a full parallel readout of all pixels simultaneously.
- control circuitry 348 is coupled to image sensor 302 to control operational characteristics of image sensor 302 .
- control circuitry 348 may generate a shutter signal for controlling image acquisition.
- the shutter signal is a global shutter signal for simultaneously enabling all pixels cells within image sensor 302 to simultaneously capture their respective image data during a single acquisition window.
- the shutter signal is a rolling shutter signal such that each row, column, or group of pixels is sequentially enabled during consecutive acquisition windows.
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US14/286,478 US9825073B2 (en) | 2014-05-23 | 2014-05-23 | Enhanced back side illuminated near infrared image sensor |
TW103135567A TWI550839B (en) | 2014-05-23 | 2014-10-14 | Enhanced backside illumination near-infrared image sensor |
CN201410815014.9A CN105097856B (en) | 2014-05-23 | 2014-12-23 | The near-infrared image sensor of enhanced backside illumination |
HK16100671.8A HK1212817B (en) | 2014-05-23 | 2016-01-21 | Enhanced back side illuminated near infrared image sensor |
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TWI550839B (en) | 2016-09-21 |
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HK1212817A1 (en) | 2016-06-17 |
US20150340391A1 (en) | 2015-11-26 |
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