US8164387B1 - Simultaneous harmonic termination in a push-pull power amplifier - Google Patents
Simultaneous harmonic termination in a push-pull power amplifier Download PDFInfo
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- US8164387B1 US8164387B1 US12/828,134 US82813410A US8164387B1 US 8164387 B1 US8164387 B1 US 8164387B1 US 82813410 A US82813410 A US 82813410A US 8164387 B1 US8164387 B1 US 8164387B1
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- 230000005540 biological transmission Effects 0.000 claims description 65
- 239000003990 capacitor Substances 0.000 claims description 23
- 230000003321 amplification Effects 0.000 claims description 7
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 230000009466 transformation Effects 0.000 description 9
- 238000000844 transformation Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 230000003094 perturbing effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3069—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output
- H03F3/3076—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output with symmetrical driving of the end stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
- H03F3/265—Push-pull amplifiers; Phase-splitters therefor with field-effect transistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/541—Transformer coupled at the output of an amplifier
Definitions
- Embodiments of the present disclosure relate generally to the field of circuits, and more particularly to simultaneous harmonic termination in a push-pull power amplifier.
- Push-pull power amplifiers are used in wireless transmission devices to amplify a differential radio frequency (RF) signal prior to transmission.
- RF radio frequency
- FIG. 1 illustrates a circuit including a harmonic tuning network and transformer in accordance with various embodiments.
- FIG. 2 is a graph depicting relationships between power-added efficiency and phase angles of second-harmonic frequency impedance and third-harmonic frequency impedance in accordance with various embodiments.
- FIG. 3 is a graph depicting relationships between adjacent channel power ratio and phase angles of second-harmonic frequency impedance and third-harmonic frequency impedance in accordance with various embodiments.
- FIG. 4 illustrates another circuit including another harmonic tuning network in accordance with various embodiments.
- FIG. 5 illustrates another circuit including another harmonic tuning network in accordance with various embodiments.
- FIG. 6 illustrates another circuit including another harmonic tuning network in accordance with various embodiments.
- FIG. 7 illustrates another circuit including another harmonic tuning network in accordance with various embodiments.
- FIG. 8 is a flowchart illustrating operation of a circuit in accordance with various embodiments.
- FIG. 9 is a wireless transmission device incorporating one of the circuits of FIG. 1 , 4 , 5 , 6 , or 7 in accordance with various embodiments.
- phrases “A/B” and “A and/or B” mean (A), (B), or (A and B); and the phrase “A, B, and/or C” means (A), (B), (C), (A and B), (A and C), (B and C) or (A, B and C).
- Coupled with may mean either one or both of the following: a direct coupling or connection, where there is no other element coupled or connected between the elements that are said to be coupled with each other; or an indirect coupling or connection, where one or more other elements are coupled or connected between the elements that are said to be coupled with each other.
- FIG. 1 illustrates a circuit 100 including a harmonic tuning network 104 in accordance with some embodiments.
- the circuit 100 which may be included in amplification circuitry, may include an RF signal source 108 that is coupled with an output stage 112 of a push-pull power amplifier.
- the push-pull power amplifier may include other sections, e.g., an input stage, an intermediate stage, etc., not explicitly shown in FIG. 1 .
- the output stage 112 may include a first transistor 116 to receive a first portion of the differential RF signal and a second transistor 120 to receive a second portion of the differential RF signal. The first and second portions may be driven 180 degrees out-of-phase with respect to one another.
- the first transistor 116 may include a base that receives the first portion of the differential RF signal from the RF signal source 108 , a collector coupled with a transmission line 124 , and an emitter coupled with ground.
- the second transistor 120 may include a base that receives the second portion of the differential RF signal from the RF signal source 108 , a collector that is coupled with a transmission line 128 , and an emitter that is coupled with ground. While the output stage 112 is shown with bipolar junction transistors in FIG. 1 , other embodiments may include other types of transistors or active power devices.
- the harmonic tuning network 104 may simultaneously terminate both second-harmonic energy residing in common mode current flows and third-harmonic energy residing in differential mode current flows.
- common mode current flows refers to in-phase currents flowing on opposite branches of a symmetric circuit. For example, currents flowing in transmission lines 124 and 128 are considered common mode current flows if they are in-phase.
- differential mode current flows refers to current flows that are 180 degrees out-of-phase in opposite branches of a symmetric circuit. For example, currents flowing on transmission lines 124 and 128 are considered differential mode current flows if they are 180 degrees out-of-phase.
- the harmonic tuning network 104 may provide simultaneous terminations by providing a desired impedance along a return path for signal energy in the second and third harmonic frequencies.
- the desired impedance may depend on the application in which the harmonic tuning network 104 is deployed.
- a saturated power amplifier used for communicating in compliance with a Global System for Mobile Communications (GSM) standard may desire a short at the third-harmonic frequency
- a linear PA used for communicating in compliance with a wireless code division multiple access (W-CDMA) standard for example, may desire a short at the second-harmonic frequency.
- W-CDMA wireless code division multiple access
- a low resistance may be desired at both the second- and third-harmonic frequencies with respective phase angles adjusted to satisfy performance objectives for the multiple modes.
- the impedance at the second-harmonic frequency may be inductive with a phase angle of approximately 140-160 degrees; while the impedance at the third-harmonic frequency is approximately 180 degrees.
- graphs 200 and 300 respectively depicted in FIGS. 2 and 3 .
- graph 200 depicts a relationship between power-added efficiency (PAE), measured as a percentage reflecting an efficiency of a power amplifier, and various phase angles of second-harmonic frequency impedance (H2), and third-harmonic frequency impedance (H3).
- Graph 300 depicts a relationship between Adjacent Channel Power Ratio (ACPR), measured as decibels relative to a carrier (dBc), and various phase angles of H2 and H3.
- PAE power-added efficiency
- H2 second-harmonic frequency impedance
- H3 third-harmonic frequency impedance
- ACPR Adjacent Channel Power Ratio
- the harmonic tuning network 104 may achieve the desired impedances at the second- and third-harmonic frequencies with low insertion losses as described below. Various topologies of the harmonic tuning network 104 will also be described below in further detail.
- the harmonic tuning network 104 may be coupled with a transformer 130 , which may be coupled with an output load 132 .
- the transformer 130 may provide an impedance match at a fundamental frequency and may also convert the amplified differential RF signal on the transmission lines 124 and 128 to an amplified single-ended RF signal for transmission.
- the transformer 130 may be, but is not limited to, a flux-coupled transformer, an autotransformer, a transmission-line transformer (e.g., a Guanella transformer), or an impedance-matching balun.
- FIG. 4 illustrates a circuit 400 including a harmonic tuning network 404 in accordance with some embodiments.
- the circuit 400 may be similar to circuit 100 with like-named or corresponding components operating in similar manners and being substantially interchangeable unless otherwise described. Similar to circuit 100 , circuit 400 may include an RF signal source 408 coupled with transistors 416 and 420 . The transistors 416 and 420 may be coupled with transmission lines 424 and 428 , respectively.
- the harmonic tuning network 404 may also be coupled with transmission lines 424 and 428 and further coupled with a transformer 430 .
- the harmonic tuning network 404 may include a number of inductor and/or capacitor (L/C) segments, e.g., L/C segment 434 , L/C segment 436 , and L/C segment 438 .
- the L/C segment 434 may include a capacitor 440 and an inductor 442 .
- the L/C segment 438 may include an inductor 444 and a capacitor 446 .
- the harmonic tuning network 404 may be symmetrical in that the L/C segment 434 may be identical to L/C segment 438 , e.g., both L/C segments include the same components that are of the same size.
- the L/C segment 436 may only include an inductor 448 , which has a first terminal coupled with a node 450 that is between the L/C segment 434 and L/C segment 438 .
- a second terminal of the inductor 448 may be coupled with ground.
- embodiments of the present disclosure show certain elements, e.g., inductors and/or capacitors, within the various L/C segments, other embodiments may have other elements that are configured to provide similar impedance matching characteristics. Thus, other embodiments are not limited to the elements of the L/C segments that are explicitly shown.
- the return path for differential mode current flows will be a series resonant path that is between the transmission lines 424 and 428 and will include L/C segments 434 and 438 .
- the return path for common mode current flows will include, in addition to L/C segments on the series resonant path, L/C segments on the path to ground, i.e., L/C segment 436 .
- a first combination of L/C segments which includes L/C segments 434 and 438
- a second combination of L/C segments, which includes L/C segments 434 , 436 , and 438 may be configured to terminate second-harmonic energy residing in the common mode current flows.
- the L/C segment 436 may be used only in the tuning related to termination of the second-harmonic energy, thereby providing an additional degree of freedom in the design of the circuit 400 .
- the aforementioned symmetry of the harmonic tuning network 404 may also provide the node 450 as a virtual ground for differential mode current flows.
- the differential mode current flows do not go through the L/C segment 436 and, therefore, experience no loss.
- all common mode current flows are in phase between transmission line 424 and 428 , and flow through L/C segment 436 , which may be configured, in conjunction with L/C segments 434 and 438 , to terminate second-harmonic energy residing in the common mode current flows.
- termination of the second-harmonic energy is provided by the circuit 400 with no degradation to the fundamental and third harmonic signals.
- FIG. 5 illustrates a circuit 500 including a harmonic tuning network 504 in accordance with some embodiments.
- the circuit 500 may be similar to circuit 400 with like-named or corresponding components operating in similar manners and being substantially interchangeable unless otherwise described. Similar to circuit 400 , circuit 500 may include an RF signal source 508 coupled with transistors 516 and 520 . The transistors 516 and 520 may be coupled with transmission lines 524 and 528 , respectively.
- the harmonic tuning network 504 may also be coupled with transmission lines 524 and 528 and further coupled with a transformer 530 .
- the harmonic tuning network 504 may include a number of L/C segments, e.g., L/C segments 534 , 536 , and 538 , arranged as a T-network, similar to harmonic tuning network 404 .
- the harmonic tuning network 504 may also include a number of L/C segments integrated into transmission lines 524 and 528 .
- harmonic tuning network 504 may include L/C segments 552 and 554 integrated into transmission line 524 ; and L/C segments 556 and 558 integrated into transmission line 528 .
- the L/C segments 552 , 554 , 556 , and 558 may include inductors 560 , 562 , 564 , and 566 , respectively.
- Integrating L/C segments into transmission lines provides additional freedom in setting the desired impedance termination for the differential mode energy of the third harmonic and the common mode energy of the second harmonic. Integrating L/C segments into transmission lines may also lessen any perturbing effect that the harmonic tuning network 504 may cause, at the fundamental frequency, to the desired power flow through the transformer 530 to the load 532 .
- FIG. 6 illustrates a circuit 600 including a harmonic tuning network 604 in accordance with some embodiments.
- the circuit 600 may be similar to circuit 500 with like-named or corresponding components operating in similar manners and being substantially interchangeable unless otherwise described.
- circuit 600 may include an RF signal source 608 coupled with transistors 616 and 620 of an output stage of a push-pull amplifier.
- the transistors 616 and 620 may be coupled with transmission lines 624 and 628 , respectively.
- the harmonic tuning network 604 may also be coupled with transmission lines 624 and 628 and further coupled with a transformer 630 .
- the harmonic tuning network 604 may include L/C segments 652 and 654 integrated into transmission line 624 ; and L/C segments 656 and 658 integrated into transmission line 628 . In some embodiments, these L/C segments may be excluded, similar to circuit 400 .
- the harmonic tuning network 604 may also include L/C segments 668 and 670 , and inductor 682 arranged as a pi network.
- L/C segments 668 and 670 may include inductors 674 and 676 , respectively.
- Inductor 674 may include a first terminal coupled with ground and a second terminal coupled with a node 678 .
- Inductor 676 may include a first terminal coupled with ground and a second terminal coupled with node 680 .
- the inductor 682 which may be included in L/C segment 672 , may have a first terminal coupled with node 678 and a second terminal coupled with node 680 .
- the L/C segment 672 may also include a capacitor 684 having a first terminal coupled with the transmission line 624 and a second terminal coupled with the node 678 ; and a capacitor 686 having a first terminal coupled with node 680 and a second terminal coupled with transmission line 628 .
- Z LCb Z LC ⁇ ⁇ 1 2 + 2 ⁇ ⁇ Z LC ⁇ ⁇ 1 ⁇ Z LC ⁇ ⁇ 2 Z LC ⁇ ⁇ 2 ; Equation ⁇ ⁇ 2
- Z LCa is an impedance of inductors 674 and 676 ;
- Z LCb is an impedance of inductor 682 ;
- Z LC1 is an impedance of inductors 542 and 544 , and
- Z LC2 is an impedance of inductor 548 .
- Z L/C as used herein represents an impedance of an inductor portion of a corresponding L/C segment. Utilizing the transformation equations in this manner may provide inductor-based transformations. This applies equally to T-to-pi transformations and to pi-to-T transformations. In other embodiments, the transformation terms may be appropriately modified to provide inductor- and capacitor-based transformations or capacitor-based transformations of the L/C segments.
- FIG. 7 illustrates a circuit 700 including a harmonic tuning network 704 in accordance with some embodiments.
- the circuit 700 may be similar to circuit 500 with like-named or corresponding components operating in similar manners and being substantially interchangeable unless otherwise described.
- circuit 700 may include an RF signal source 708 coupled with transistors 716 and 720 of an output stage of a push-pull amplifier.
- the transistors 716 and 720 may be coupled with transmission lines 724 and 728 , respectively.
- the harmonic tuning network 704 may also be coupled with transmission lines 724 and 728 and further coupled with a transformer 730 .
- the harmonic tuning network 704 may include L/C segments 734 , 736 , and 738 arranged in a T-network similar to L/C segments 534 , 536 , and 538 of harmonic tuning network 504 .
- a portion of the impedance value of L/C segment 534 may be incorporated into a pi network of L/C segments 785 , 786 , and 787 .
- the pi network of L/C segments 785 , 786 , and 787 may be equivalent to the T network of L/C segments 552 , 554 , and part of 534 .
- each of the L/C segments 785 , 786 , 787 , 788 , 789 , and 790 may respectively include an inductor 791 , 792 , 793 , 794 , 795 , and 796 .
- the equivalent impedance values of the pi networks of the harmonic tuning network 704 may be determined by a T-to-pi transformation as follows:
- the L/C segments 785 , 786 , 789 , and 790 may be realized by the bond wires themselves. It may be desirable for an embodiment in which a harmonic tuning network is implemented as a flip chip to utilize the equivalent structure that is shown in FIG. 5 , where inductors 562 and 566 represent flip-chip interface inductors.
- FIG. 8 is a flowchart 800 illustrating operation of an amplification circuit in accordance with various embodiments.
- the operation may include amplifying a differential RF signal with a push-pull amplifier and outputting the amplified differential signal along a pair of transmission lines.
- the operation may include simultaneously terminating second- and third-harmonic energies respectively residing in common mode and differential mode current flows. This simultaneous termination may be accomplished by use of any of the previously discussed harmonic tuning networks.
- the operation may include providing an impedance match at a fundamental frequency, to efficiently transfer the fundamental frequency energy, from the amplifying transistors, to an external load. Fundamental frequency energy resides primarily in the differential mode current flows.
- the operation may include converting the amplified differential RF signal to an amplified single-ended RF signal. As previously described, the providing of the impedance match and converting may be done by a transformer.
- the circuits 100 , 400 , 500 , 600 , and 700 may be incorporated into any of a variety of apparatuses and systems.
- a block diagram of an exemplary wireless transmission device 900 incorporating one of the circuits 100 , 400 , 500 , 600 , and 700 (represented by 902 ) into amplification circuitry 904 of a transmitter 906 that includes a push-pull power amplifier (PA) 908 , a harmonic tuning network (HTN) 910 , and a transformer (TF) 912 is illustrated in FIG. 9 .
- the wireless transmission device 900 may have an antenna structure 914 , a duplexer 916 , a receiver 918 , a main processor 920 , and a memory 922 coupled with each other at least as shown. While the wireless transmission device 900 is shown with transmitting and receiving capabilities, other embodiments may include wireless transmission devices without receiving capabilities.
- the wireless transmission device 900 may be, but is not limited to, a mobile telephone, a paging device, a personal digital assistant, a text-messaging device, a portable computer, a desktop computer, a telecommunications base station, a subscriber station, an access point, a radar, a satellite communication device, or any other device capable of wirelessly transmitting RF signals.
- the main processor 920 may execute a basic operating system program, stored in the memory 922 , in order to control the overall operation of the wireless transmission device 900 .
- the main processor 920 may control the reception of signals and the transmission of signals by receiver 918 and transmitter 906 .
- the main processor 920 may be capable of executing other processes and programs resident in the memory 922 and may move data into or out of memory 922 , as desired by an executing process.
- the transmitter 906 may receive outgoing data (e.g., voice data, web data, e-mail, signaling data, etc.) from the main processor 920 , may generate an RFin signal 924 to represent the outgoing data, and provide the RFin signal 924 to the amplification circuitry 904 .
- outgoing data e.g., voice data, web data, e-mail, signaling data, etc.
- the transmitter 906 may receive outgoing data (e.g., voice data, web data, e-mail, signaling data, etc.) from the main processor 920 , may generate an RFin signal 924 to represent the outgoing data, and provide the RFin signal 924 to the amplification circuitry 904 .
- the amplification circuitry 904 may amplify the RFin signal 924 to provide an amplified RFamp signal 926 , which may be forwarded to the duplexer 916 and then to the antenna structure 914 for an over-the-air (OTA) transmission.
- OTA over-the-air
- the receiver 918 may receive an incoming OTA signal from the antenna structure 914 through the duplexer 916 .
- the receiver 918 may process and send the incoming signal to the main processor 920 for further processing.
- the antenna structure 914 may include one or more directional and/or omnidirectional antennas, including, e.g., a dipole antenna, a monopole antenna, a patch antenna, a loop antenna, a microstrip antenna or any other type of antenna suitable for OTA transmission/reception of RF signals.
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Abstract
Description
Z LCa =Z LC 1+2Z LC 2; and
where ZL/Cc is an impedance of
Claims (26)
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US8983406B2 (en) | 2011-07-08 | 2015-03-17 | Skyworks Solutions, Inc. | Signal path termination |
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