US7177331B2 - Laser diode module with a built-in high-frequency modulation IC - Google Patents
Laser diode module with a built-in high-frequency modulation IC Download PDFInfo
- Publication number
- US7177331B2 US7177331B2 US10/998,733 US99873304A US7177331B2 US 7177331 B2 US7177331 B2 US 7177331B2 US 99873304 A US99873304 A US 99873304A US 7177331 B2 US7177331 B2 US 7177331B2
- Authority
- US
- United States
- Prior art keywords
- laser diode
- frequency modulation
- heat sink
- leg
- built
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
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- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000012212 insulator Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 6
- 230000005855 radiation Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06226—Modulation at ultra-high frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
Definitions
- the invention relates to a laser diode module with a built-in high-frequency modulation IC (abbr. for integrated circuit), and more particularly to a laser diode module that is used to remove the reflected noise generated as the laser beam reads the signal to be played back and that is directly packaged within a metal cap.
- a laser diode module with a built-in high-frequency modulation IC (abbr. for integrated circuit)
- abbreviations IC abbreviations for integrated circuit
- the optical reader or so called optical pickup apparatus, which reads the signals stored on the CD, is made up of several optical components, including the laser diode (LD), objective lens, hologram, and photo diode (PD).
- LD laser diode
- PD photo diode
- the laser diode acts as the optical pickup apparatus, then the problem of the reflected noise will occur.
- an optical beam from the laser diode is released onto the diskette, some of the reflected light from the diskette's surface will go back to the LD, creating the fuzzy signal phenomenon. Since the laser diode vibrates on a single mode, therefore, when there is light reflected back, it will produce mode hopping, and since the output of optical volume will have massive changes, hence it will produce the reflected noise.
- the laser diode chip is first placed onto the heat sink ( 11 ).
- a metal cap ( 12 ) In order to prevent the exposed chip from being damaged, a metal cap ( 12 ) must be sealed on top of it and dry gas with very low dew point pumped inside.
- the diameter of the final laser diode module ( 10 ) sealed packaging is 5.6 mm while the legs of several terminals ( 13 ) extend from the bottom of the heat sink ( 11 ).
- the electric circuit produced by the high-frequency electric current ( 21 ) is linked to the sealed laser diode modules ( 10 ) through a printed circuit board (PCB) ( 20 ).
- PCB printed circuit board
- the main object of the invention is to provide a type of a laser diode module with a built-in high-frequency modulation IC, which uses existing 5.6 mm diameter or smaller sealed packaging, to remove the reflected noise generated by the laser diode.
- a circuit for producing high-frequency current is integrated to be the high-frequency modulation IC.
- directly seal and package the HFMIC inside the metal cap to save the hassle of externally attaching a circuit board during assembly of CD devices. It can also reduce manual adjustments being made, which will greatly enhance productivity and usage convenience, simplify module designing, and bring down manufacturing costs.
- Another object of the invention is to reduce the external space by modularizing laser diode of the optical pickup apparatus. This will have positive benefits on bringing down the weight and thickness of CD devices.
- a further object of the invention is to reduce the electromagnetic interference (EMI) by directly packaging the high-frequency modulation IC und having the metal cap's shielding.
- EMI electromagnetic interference
- FIG. 1 is a schematic drawing of a conventional laser diode externally connected with a circuit for producing high-frequency current
- FIG. 2 is an exploded view of the present invention
- FIG. 3 is a perspective view of the present invention after packaging process
- FIG. 4 is a cutaway view taken along the line 4 — 4 of FIG. 3 ;
- FIG. 5 is a cutaway view taken along the line 5 — 5 of FIG. 5 ;
- FIG. 6 is a bottom view of the invention.
- FIG. 7 is a circuit diagram of the invention.
- FIG. 8 is a block diagram of the high-frequency modulation IC in accordance with the invention.
- a laser diode module with a built-in high-frequency modulation IC in accordance with the invention include: a heat sink 31 , with several legs 32 protruding from its back cover; a mount 311 , which sticks out from the surface of the heat sink 31 ; a submount 312 , which is set up on the mount 311 .
- FIG. 2 shows the inner layer, which is for installing a laser diode 33 .
- a photo diode 34 is mounted upon the surface of the heat sink 31 , and across from the laser diode 33 , while a metal cap 35 locks in on top of the heat sink 31 .
- This is the fundamental structure for the laser diode and photo diode modules 30 .
- these elements are already developed in the prior art, and no further description will be given hereinafter.
- a high-frequency producing circuit for reducing the reflected noise generated by the laser diode is integrated to be a high-frequency modulation IC (HFMIC) 36 that is directly packaged within the sealed metal cap 35 , i.e. before the metal cap 35 is joined on top of the heat sink 31 , the HFMIC 36 is already built-in.
- HFMIC high-frequency modulation IC
- the mount 311 During the testing process of the invention, it was discovered that a better location for its built-in HFMIC 36 should be placed above the mount 311 . There is enough space in this place, and it will not block off the optical output of the laser diode and the optical detection of the photo diode.
- the mount 311 , heat sink 31 , and second connection leg 32 b form an electrical connection, which are the GND's negative terminal power source.
- the HFMIC 36 has more connection points, hence an insulation layer 361 needs to be placed between it and the mount 312 , so that the HFMIC 36 and the mount 311 are insulated each other.
- the implementation of the invention requires four legs, i.e. the first connection leg 32 a , the second connection leg 32 b , the third connection leg 32 c and the fourth connection leg 32 d .
- the second connection leg 32 b is an GND leg.
- the top is shown in FIGS. 4 and 5 ; it is joined to the bottom back side of the heat sink 31 so that the heat sink 31 and the mount 311 on top of it are both the GND's negative terminal power source.
- the third connection leg 32 c is the positive electrical connection leg, providing the HFMIC 36 with the power needed.
- the first connection leg 32 a and the fourth connection leg 32 d provide linkage with an external APC, as shown in FIG. 7 .
- the APC 40 is joined to the first and fourth connection legs of the already built-in HFMIC's laser diode module 30 .
- the APC Automatic Power Control 40 it monitors the back beam of the laser diode 33 through the photo diode 34 , which creates a negative feedback loop and achieves the goal of a stable frequency output.
- the APC 40 is a circuit of a conventional laser diode module, of which is not covered in the invention's patent and no further description will be given.
- the feature of the invention is that the first and fourth connection legs provide linkage with an external APC 40 .
- between the first connection leg and APC 40 there is an electrical sensor.
- the third connection leg 32 c which serves as the positive power source, goes straight through the heat sink 31 and has an insulator 321 between it and the heat sink 31 . At the top, it is joined to the HFMIC's power input end through a wire bond 371 while the HFMIC's 36 GND end is joined to the mount 311 through a second wire bond 372 .
- connection leg 32 a goes through the heat sink 31 and has insulation 322 placed between it and the heat sink 31 .
- the first connection leg 32 a goes through the heat sink 31 and has insulation 322 placed between it and the heat sink 31 .
- At the top there is a third wire bond 373 that connects it with the HFMIC 36 .
- a fourth wire bond 374 links it to the LD's 33 positive end while the LD's 33 negative end is attached onto the submount 312 .
- the submount 312 is then linked to the mount 311 through the fifth wire bond 375 .
- the fourth connection leg 32 d goes through the heat sink 31 and has insulation 323 placed between it and the heat sink 31 .
- the HFMIC 36 can utilize its existing 5.6 mm or smaller diameter sealed packaging, build-in within the metal cap 35 , forming a built-in HFMIC laser diode module 30 , as shown in FIG. 3 .
- FIG. 6 shows the laser diode module 30 from the back bottom.
- the definition of the four new connection legs along with the electrical circuit diagram in FIG. 7 shows:
- This invention's new laser diode module 30 can reduce the inconvenience of having to attach an external high-frequency electric current producing circuit board 20 when manufacturing optical pickup apparatus, and can also reduce the need for manual adjustments, thereby greatly enhancing productivity and convenience, as well as simplifying module designing. Furthermore, it can reduce the space and cost needed for product designing and also bring down EMI due to the shielding by the metal cap 35 .
- FIG. 8 shows an applicable embodiment of the HFMIC, which includes a V/I converter, OSC, HF driver, and power save module.
- the HFMIC can build-in frequency and amplitude modulation directly into the HFMIC 36 .
- the invention places the circuit within the metal cap 35 after integrated, which helps overcome the problem of making the optical pickup apparatus smaller and lightweight.
- the HFMIC can link up with another high-frequency driver circuit, which can be used by a laser diode that has a different wave length so that it can used as an optical disk device for DVD and CD-ROM.
- the electrical circuit block diagram in FIG. 8 describes HFMIC's optimal implementation example. The allocation and changes to the electrical circuit is not the target of the invention, and no further description will be given.
- the built-in HFMIC technology used in the invention helps simplify the packaging and manufacturing, save costs, has market worthiness, and can be applied by the industry.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
- 1. When manufacturing the optical pickup apparatus, a circuit board (20) for producing the high-frequency electric current must be externally attached. This not only increases the inconvenience during manufacturing, but also relies on manual adjustment of the optical output, which in turn affects production efficiency and increases manufacturing costs as well.
- 2. By externally attaching the circuit board (20) for producing high-frequency electric current onto the laser diode modules (10), the size of the entire device cannot become any smaller. This makes it difficult to design CD devices that demand small size and lightweight, hence it cannot be applied to some special products that require smaller sizes.
- 3. In addition, when the externally attached circuit (21) for producing high-frequency electric current is activated, it will result in a great deal of electromagnetic interference (EMI).
- First connection leg links with the
APC 50, and is the LD's 33 positive terminal power source. - Second connection leg is the
HFMIC 36,laser diode 33 and PD's 34 GND negative terminal power source. - Third connection leg is the HFMIC's 36 positive terminal power source.
- Fourth connection leg links with the
APC 50, and is the PD's 34 positive terminal power source.
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/998,733 US7177331B2 (en) | 2004-11-30 | 2004-11-30 | Laser diode module with a built-in high-frequency modulation IC |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/998,733 US7177331B2 (en) | 2004-11-30 | 2004-11-30 | Laser diode module with a built-in high-frequency modulation IC |
Publications (2)
Publication Number | Publication Date |
---|---|
US20060114950A1 US20060114950A1 (en) | 2006-06-01 |
US7177331B2 true US7177331B2 (en) | 2007-02-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/998,733 Expired - Fee Related US7177331B2 (en) | 2004-11-30 | 2004-11-30 | Laser diode module with a built-in high-frequency modulation IC |
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US (1) | US7177331B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090279578A1 (en) * | 2008-05-08 | 2009-11-12 | Jin-Shan Pan | Dual wavelength laser device for optical communication |
US20090310635A1 (en) * | 2008-06-12 | 2009-12-17 | Applied Optoelectronics, Inc. | Wavelength locker and laser package including same |
US20140160751A1 (en) * | 2012-12-11 | 2014-06-12 | Vixar Inc. | Low cost optical package |
US8787772B2 (en) | 2008-02-13 | 2014-07-22 | Applied Optoelectronics, Inc. | Laser package including semiconductor laser and memory device for storing laser parameters |
DE102018102961A1 (en) | 2018-02-09 | 2019-08-14 | Msg Lithoglas Gmbh | Component assembly, package and package assembly and method of manufacture |
WO2020259755A1 (en) | 2019-06-24 | 2020-12-30 | Msg Lithoglas Gmbh | Method for producing a component assembly for a package, method for producing a package having a component assembly, component assembly, and package |
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US7734184B2 (en) * | 2006-08-04 | 2010-06-08 | Finisar Corporation | Optical transceiver module having an active linear optoelectronic device |
US7646988B2 (en) * | 2006-08-04 | 2010-01-12 | Finisar Corporation | Linear amplifier for use with laser driver signal |
US20080075135A1 (en) * | 2006-09-25 | 2008-03-27 | Unity Opto Technology Co., Ltd. | Laser diode |
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JP2016029718A (en) * | 2014-07-15 | 2016-03-03 | ローム株式会社 | Semiconductor laser device |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04352378A (en) * | 1991-05-29 | 1992-12-07 | Mitsubishi Electric Corp | Semiconductor laser device |
JPH0582896A (en) * | 1991-09-19 | 1993-04-02 | Mitsubishi Electric Corp | Semiconductor laser device |
JPH05167200A (en) * | 1991-12-18 | 1993-07-02 | Mitsubishi Electric Corp | Semiconductor laser device |
US6011768A (en) * | 1997-03-04 | 2000-01-04 | Kabushiki Kaisha Toshiba | Laser light control circuit, optical pickup unit and optical pickup device incorporating the same |
-
2004
- 2004-11-30 US US10/998,733 patent/US7177331B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04352378A (en) * | 1991-05-29 | 1992-12-07 | Mitsubishi Electric Corp | Semiconductor laser device |
JPH0582896A (en) * | 1991-09-19 | 1993-04-02 | Mitsubishi Electric Corp | Semiconductor laser device |
JPH05167200A (en) * | 1991-12-18 | 1993-07-02 | Mitsubishi Electric Corp | Semiconductor laser device |
US6011768A (en) * | 1997-03-04 | 2000-01-04 | Kabushiki Kaisha Toshiba | Laser light control circuit, optical pickup unit and optical pickup device incorporating the same |
Cited By (14)
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---|---|---|---|---|
US8787772B2 (en) | 2008-02-13 | 2014-07-22 | Applied Optoelectronics, Inc. | Laser package including semiconductor laser and memory device for storing laser parameters |
US8121167B2 (en) * | 2008-05-08 | 2012-02-21 | Truelight Corporation | Dual wavelength laser device for optical communication |
US20090279578A1 (en) * | 2008-05-08 | 2009-11-12 | Jin-Shan Pan | Dual wavelength laser device for optical communication |
US20090310635A1 (en) * | 2008-06-12 | 2009-12-17 | Applied Optoelectronics, Inc. | Wavelength locker and laser package including same |
US11336077B2 (en) | 2012-12-11 | 2022-05-17 | Vixar, Inc. | Low cost optical package |
US20140160751A1 (en) * | 2012-12-11 | 2014-06-12 | Vixar Inc. | Low cost optical package |
US9991673B2 (en) | 2012-12-11 | 2018-06-05 | Vixar, Inc. | Low cost optical package |
DE102018102961A1 (en) | 2018-02-09 | 2019-08-14 | Msg Lithoglas Gmbh | Component assembly, package and package assembly and method of manufacture |
DE102018102961A9 (en) | 2018-02-09 | 2019-12-05 | Msg Lithoglas Gmbh | Component assembly, package and package assembly and method of manufacture |
WO2019154465A1 (en) | 2018-02-09 | 2019-08-15 | Msg Lithoglas Gmbh | Component arrangement, package and package arrangement, as well as production method |
US12224388B2 (en) | 2018-02-09 | 2025-02-11 | Msg Lithoglas Gmbh | Component arrangement, package and package arrangement, as well as production method |
WO2020259755A1 (en) | 2019-06-24 | 2020-12-30 | Msg Lithoglas Gmbh | Method for producing a component assembly for a package, method for producing a package having a component assembly, component assembly, and package |
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US12191137B2 (en) | 2019-06-24 | 2025-01-07 | Msg Lithoglas Gmbh | Method for manufacturing a component arrangement for a package, method for manufacturing a package having a component arrangement, a component arrangement and a package |
Also Published As
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US20060114950A1 (en) | 2006-06-01 |
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Legal Events
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AS | Assignment |
Owner name: ARIMA OPTOELECTRONICS CORP., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YEN, HSIEN-CHENG;LIN, CHUN-TING;REEL/FRAME:015443/0030 Effective date: 20041020 |
|
AS | Assignment |
Owner name: ARIMA LASERS CORP., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ARIMA OPTOELECTRONICS CORP.;REEL/FRAME:022668/0214 Effective date: 20090429 |
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Effective date: 20190213 |