US7120884B2 - Mask revision ID code circuit - Google Patents
Mask revision ID code circuit Download PDFInfo
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- US7120884B2 US7120884B2 US09/751,429 US75142900A US7120884B2 US 7120884 B2 US7120884 B2 US 7120884B2 US 75142900 A US75142900 A US 75142900A US 7120884 B2 US7120884 B2 US 7120884B2
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- 238000006880 cross-coupling reaction Methods 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 6
- 238000010586 diagram Methods 0.000 description 11
- 238000013459 approach Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000000470 constituent Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
- H01L2223/5444—Marks applied to semiconductor devices or parts containing identification or tracking information for electrical read out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates generally to integrated circuits, and more particularly to circuits for indicating mask versions and/or revisions of an integrated circuit.
- a typical integrated circuit may be formed by patterning or otherwise altering various layers according to particular masks.
- a collection of masks for forming an integrated circuit is often referred to as a mask set.
- An integrated circuit mask may take various forms.
- a mask may be a lithographic mask for selectively exposing a resist material to a radiation source, such as light having a particular frequency.
- a mask may include a pattern that is programmed into a machine that may provide a beam of particles, such as electrons. Such a beam may raster a pattern across an integrated circuit layer according to such a programmed pattern.
- many integrated circuits include readable mask revision identification (ID) codes. By electronically reading values generated at a particular pin, or pins, it can be possible to identify a particular mask set.
- ID mask revision identification
- a circuit 700 may include a number of mask ID bit circuits 702 - 0 to 702 -n, where n is an integer.
- Each mask ID bit circuit ( 702 - 0 to 702 -n) may receive two different voltages as inputs: VGND and VPWR. Such input voltages may be power supply voltages, as but one example.
- Each mask ID bit circuit ( 702 - 0 to 702 -n) may also provide an output value SA 0 to SAn.
- Output values (SA 0 to SAn) may provide a mask revision ID code.
- mask ID bit circuits ( 702 - 0 to 702 -n) may be configured so that each different mask revision can result in a different set of output values (SA 0 to SAn).
- FIG. 8 illustrates one example of a conventional mask ID bit circuit 800 .
- a mask ID bit circuit 800 may include a number of links, shown as 802 - 0 to 802 - 4 , arranged in series. Each link ( 802 - 0 to 802 - 4 ) may be formed from a different layer of an integrated circuit.
- a link 802 - 0 may be formed from a layer comprising amorphous and/or polycrystalline silicon (polysilicon), while links 802 - 1 to 802 - 4 may be formed from increasingly higher levels of interconnect. That is, link 802 - 1 may be formed from a “metal 1 ” layer, link 802 - 2 may be formed from a “metal 2 ” layer, etc.
- An output value SAn may be provided at a sense node 804 .
- each link is represented as a double throw switch.
- a sense node may be connected to either a first potential (VGND) or a second potential (VPWR) according to the arrangements of the links.
- FIG. 9 includes a series of top plan views of links, starting with a lower integrated circuit layer link 802 - 0 and ending with a higher integrated circuit layer link 802 - 4 . It is understood that each layer may be electrically connected with one another by way of a vertical contact and/or via. Such electrical connections between layers are shown as dashed lines in FIG. 9 .
- each link ( 802 - 0 to 802 - 4 ) may include conductive lines 902 - 00 / 01 to 902 - 40 / 41 .
- Each conductive line ( 902 - 00 to 902 - 41 ) may include a downward contact 904 - 00 / 01 to 904 - 40 / 41 and an upward contact 906 - 00 / 01 to 906 - 40 / 41 .
- a downward contact ( 904 - 00 to 904 - 41 ) may connect one layer with a lower layer.
- an upward contact ( 906 - 00 to 906 - 41 ) may connect one layer with a higher layer.
- downward contacts 904 - 10 and 904 - 11 can correspond to upward contacts 906 - 00 and 906 - 01 .
- conductive line 902 - 00 may have a downward contact 904 - 00 to one potential (VGND), while conductive line 902 - 01 may have a downward contact 904 - 10 to another potential (VPWR). Further, in the example of FIG. 9 , a conductive line 902 - 40 may provide an output value SAn at a sense node 804 .
- FIG. 10 shows a potential VGND connected to conductive line 902 - 00 by way of downward contact 904 - 00 .
- Various connections between conductive lines 902 - 00 , 902 - 10 and 902 - 20 are shown in the cross sectional view.
- FIGS. 8 and 9 can represent a mask bit ID circuit in an initial (unmodified) state. That is, such a mask bit ID circuit may represent an initial set of masks for an integrated circuit.
- an output value SAn will be low (e.g., VGND), as the series of links ( 802 - 0 to 802 - 4 ) provide a conductive path between VGND and a sense node 804 .
- VGND voltage-to- 4
- FIGS. 11 and 12 A revised mask bit ID circuit is shown in FIGS. 11 and 12 .
- a link 1102 - 2 has been modified to reflect a change in a mask set.
- a link 1102 - 2 can be conceptualized as a double throw switch, once modified, the switch can be considered to be thrown to connect to a potential VPWR, rather than a potential VGND (the unmodified state).
- an output value SAn can be a logic high value, as a modified conductive path is created between a potential VPWR and a sense node 804 .
- FIG. 12 shows top plan views corresponding to the various links of FIG. 11 .
- a modified link 1102 - 2 may include one conductive line 1202 - 20 that includes a single downward contact 904 - 20 , and another conductive line 1202 - 21 that includes a single downward contact 904 - 21 , but conductively connects to a higher link with upward contacts 906 - 20 and 906 - 21 .
- VGND low logic value
- VPWR high logic value
- a drawback to conventional approaches can be the limited number of mask revisions that may be expressed for a given set of mask bit ID circuits.
- n mask ID bits only n mask revisions may be expressed.
- Such a limitation can exist because once a change is made to a mask ID bit, the bit value may not be changed back unless the same mask layer is changed. Consequently, to account for higher numbers of mask revisions, it may be necessary to include more and more mask ID bit circuits.
- a mask identification circuit may include n mask ID bit circuits that provide an n-bit mask ID code.
- an n-bit ID code according to the embodiments can provide 2 n different mask ID codes with any combination of mask layer changes. Consequently, more mask changes may be accommodated than conventional approaches.
- each mask ID bit circuit may include signal paths connected to two different potentials.
- a mask ID bit circuit provides a first potential to a sense node.
- signal paths may be cross coupled to provide a second potential to a sense node.
- signal paths maybe cross coupled once again to provide the first potential to a sense node once again.
- each mask ID bit circuit may include a number of links arranged in series.
- Each link can include two inputs and two outputs. In a first configuration, two inputs may be directly coupled to two outputs, while in a second configuration, two inputs may be cross coupled to two outputs.
- a link may include two conductive lines. In a first configuration, two conductive lines may have a first orientation. In a second configuration, two conductive lines may have a different orientation. Different orientations may be perpendicular to one another.
- a conductive line of a link may be connected to a conductive line of another link by one contact in both a first configuration and a second configuration.
- each link may be connected to a lower link by downward contacts that are diagonal to one another. Further, each link may be connected to a higher link by upward contacts that are diagonal to one another.
- FIG. 1 is a schematic diagram of a mask identification (ID) bit circuit according to one embodiment.
- FIG. 2 is a series of top plan views of showing a mask ID bit circuit according to one embodiment.
- FIG. 3 is a schematic diagram of a mask ID bit circuit after a first modification according to one embodiment.
- FIG. 4 is a series of top plan views of showing a mask ID bit circuit after a first modification according to one embodiment.
- FIG. 5 is a schematic diagram of a mask ID bit circuit after a second modification according to one embodiment.
- FIG. 6 is a series of top plan views of showing a mask ID bit circuit after a second modification according to one embodiment.
- FIG. 7 is a block diagram of a mask revision ID code circuit.
- FIG. 8 is a schematic diagram of a conventional mask ID bit circuit.
- FIG. 9 is a series of top plan views of showing a conventional mask ID bit circuit.
- FIG. 10 is a side cross sectional view of a conventional mask ID bit circuit.
- FIG. 11 is a schematic diagram of a conventional mask ID bit circuit after a modification.
- FIG. 12 is a series of top plan views of showing a conventional mask ID bit circuit after a modification.
- the embodiments include a mask identification (ID) code circuit and a mask ID bit circuit.
- ID mask identification
- a mask ID bit circuit may represent more than one change in a mask. Consequently, the number of revisions represented by a mask revision ID code circuit may not be limited to the number of mask ID bit circuits.
- a mask revision ID code circuit may have the same general layout as that set forth in FIG. 7 .
- each mask ID bit circuits within such a circuit 700 may be capable representing multiple changes in a mask.
- a mask ID bit circuit 100 may be conceptualized as including a number of links, shown as 102 - 0 to 102 - 4 , arranged in series.
- each link ( 102 - 0 to 102 - 4 ) may be formed from a different layer in an integrated circuit. More particularly, each link may be formed by patterning a different conductive layer.
- one or more lower layers, such as 102 - 0 may comprise polycrystalline silicon, while one or more higher layers may comprise higher levels of interconnect, or the like.
- a link ( 102 - 0 to 102 - 4 ) may have two inputs and at least one output.
- a link 102 - 1 may have inputs 104 - 0 and 104 - 1 and outputs 106 - 0 and 106 - 1 .
- Inputs ( 104 - 0 and 104 - 1 ) and outputs ( 106 - 0 and 106 - 1 ) may be directly coupled or cross-coupled.
- an input 104 - 0 may be coupled to an output 106 - 0
- an input 104 - 1 may be coupled to an output 106 - 1 .
- an input 104 - 0 may be coupled to an output 106 - 1
- an input 104 - 1 may be coupled to an output 106 - 0 .
- FIG. 1 shows an example where links ( 102 - 0 to 102 - 4 ) can be considered to have directly coupled inputs and outputs.
- a link ( 102 - 0 to 102 - 4 ) may be changed from a directly coupled configuration to a cross coupled configuration, thereby indicating a mask revision/change.
- another link ( 102 - 0 to 102 - 4 ) may be changed from a directly coupled configuration to a cross coupled configuration.
- links ( 102 - 0 to 102 - 4 ) of a mask ID bit circuit 100 may form signal chains that can provide a particular predetermined potential to a sense node 108 .
- a signal chain may provide a conductive path from a potential VGND to a sense node 108 .
- a link may change into a cross coupled configuration, a signal chain may provide a conductive path from a potential VPWR to a sense node 108 .
- a signal path would switch once more, again providing a conductive path from a potential VGND to a sense node 108 .
- a mask ID bit circuit 100 may represent more than one change in a mask.
- a link ( 102 - 0 to 102 - 4 ) may be conceptualized as including two double throw switches. When both switches are in one state, a link ( 102 - 0 to 102 - 4 ) may provide direct coupling between an input and output. When both switches are in another state, a link ( 102 - 0 to 102 - 4 ) may provide cross coupling between an input and an output.
- Each link ( 102 - 0 to 102 - 4 ) may be formed on a particular integrated circuit layer, and connected to another link by way of vertical connections.
- Such vertical connections may include, without limitation, contact like structures, including vias.
- a link 102 - 0 may be formed on a lower integrated circuit layer than links 102 - 1 to 102 - 4
- a link 102 - 1 may be formed on a lower integrated circuit layer than links 102 - 2 to 102 - 4 .
- a link ( 102 - 0 to 102 - 4 ) may include conductive lines 202 - 00 / 01 to 202 - 40 / 41 .
- a conductive line ( 202 - 00 to 202 - 41 ) may include a downward contact 204 - 00 / 01 to 204 - 40 / 41 and an upward contact 206 - 00 / 01 to 206 - 40 / 41 .
- downward contacts ( 204 - 00 to 204 - 41 ) and upward contacts ( 206 - 00 to 206 - 41 ) have an alternating diagonal relationship to one another.
- downward contacts 204 - 00 and 204 - 01 are situated diagonal to one another.
- upward contacts 206 - 00 and 206 - 01 are diagonal with one another.
- upward contacts 206 - 10 and 206 - 11 are diagonal to one another, but situated in an alternating position to downward contacts 206 - 00 and 206 - 01 of a lower link 102 - 0 .
- This is in contrast to a conventional approach, such as that shown in FIG. 9 , which may not include contacts in a diagonal arrangement.
- An upward contact ( 206 - 00 to 206 - 41 ) may correspond to a downward contact ( 204 - 00 to 204 - 41 ) of a next higher layer.
- upward contacts 206 - 00 and 206 - 01 can correspond to downward contacts 204 - 10 and 204 - 11 .
- links providing signal paths that may be directly or cross coupled can be formed on different layers of an integrated circuit.
- FIGS. 1 and 2 shows an example of a links that are directly coupled.
- FIGS. 3 and 4 show how a link may be changed from a directly coupled state to a cross coupled state, to thereby provide a different value at a sense node 108 .
- FIG. 3 shows a schematic diagram of a mask ID bit circuit 300 that may include some of the same general constituents as FIG. 1 . To that extent like items will be referred to the same reference character as FIG. 1 .
- FIG. 3 shows links arranged in the same general fashion as FIG. 1 .
- a link 302 - 2 has been changed to a cross coupled state.
- a signal path can be provided between a potential VPWR and a sense node 108 .
- This is in contrast to the configuration of FIG. 1 , which may provide a signal path between a potential VGND and a sense node 108 .
- a cross coupled state may be represented by two, double throw switches being changed from a first thrown position to second thrown position.
- FIG. 4 shows a series of top plan views showing links formed in various integrated circuit layers.
- FIG. 4 can correspond to the arrangement of FIG. 3 .
- FIG. 4 may include some of the same general constituents as FIG. 2 . To that extent like items will be referred to the same reference character as FIG. 2 .
- FIG. 4 shows links arranged in the same general fashion as FIG. 2 .
- a link 402 - 2 may include conductive lines 402 - 20 and 402 - 21 at a different orientation than in a previous mask version.
- a link 102 - 2 includes conductive lines 102 - 20 and 102 - 21 oriented in a first direction (horizontal in the figure).
- a link 402 - 2 may include conductive lines 402 - 20 and 402 - 21 oriented in a second direction (vertical in the figure).
- FIGS. 1 , 2 and 3 , 4 shows a different value (i.e., the value at sense node 108 ) may be provided to represent one mask change.
- a mask ID bit circuit may be switched between output values multiple times with multiple mask layers.
- FIGS. 5 and 6 a second mask version is shown by FIGS. 5 and 6 .
- FIGS. 5 and 6 can be conceptualized as showing another mask version change following that of FIGS. 3 and 4 . More particularly, FIG. 5 shows a mask ID bit circuit 500 in which another link 502 - 3 (in addition to a link 302 - 2 ) has been placed into a cross coupled state. As in the case of FIG. 3 , a link 502 - 3 in a cross coupled state may be represented by two, double throw switches being switched from a directly coupled thrown position, to a cross coupled thrown position.
- a signal path can be provided between a sense node 108 and a potential VGND.
- a signal path may be provided from a sense node 108 to a potential VGND.
- a signal path may be provided from a sense node 108 to a potential VPWR.
- a signal path may once again be provided from a sense mode 108 to a potential VGND.
- a mask ID bit circuit may alternate a resulting potential at a sense node as many times as there are links. That is, a potential at node 108 can be changed to the opposite state by changing any link.
- FIG. 6 shows a series of top plan views showing links formed in various integrated circuit layers.
- FIG. 6 can correspond to the arrangement of FIG. 5 .
- FIG. 6 may include some of the same general constituents as FIG. 4 . To that extent like items will be referred to the same reference character as FIG. 4 .
- FIG. 6 shows links arranged in the same general fashion as FIG. 4 .
- a second link 502 - 3 may include conductive lines 602 - 30 and 602 - 31 at a different orientation than in a previous mask version.
- a link 102 - 2 may include conductive lines 102 - 20 and 102 - 21 oriented in a first direction (horizontal in the figure).
- a two links 402 - 2 and 502 - 3 may include conductive lines 602 - 20 and 602 - 21 oriented in a second direction (vertical in the figure).
- conductive lines 402 - 20 and 402 - 21 may have a different orientation than a previously mask version, corresponding downward contact holes 204 - 20 / 21 and upward contact holes 206 - 20 / 21 may have the same general arrangement in all mask versions.
- multiple mask ID bit circuits can represent more possible mask versions than conventional cases. More particularly, n mask ID bit circuits may represent 2 n possible mask versions with any combination of mask layer changes. As but one example, multiple mask ID bit circuits may have an arrangement such as that shown in FIG. 7 .
- FIGS. 1–6 represent but one possible progression of mask versions. That is, while FIGS. 1 and 2 show all links ( 102 - 0 to 102 - 4 ) and conductive lines ( 202 - 00 to 202 - 41 ) in the same configuration (e.g., all switches in a “down” position and all lines horizontal), such an arrangement does not necessarily have to represent an initial mask version.
- An initial mask version may have such links and conductive lines in an arbitrary configuration, with changes being made to such links to indicate a different mask version/revision.
- FIGS. 2 , 4 and 6 show links directly on top of one another. Such an arrangement can provide for a mask ID bit circuit that consumes a small amount of circuit area. However, such a configuration should not be construed as limiting the invention thereto. Conductive lines could take different forms, being longer, being shorter, or having bends or the like, to name but a few variations.
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Abstract
Description
Claims (21)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US09/751,429 US7120884B2 (en) | 2000-12-29 | 2000-12-29 | Mask revision ID code circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US09/751,429 US7120884B2 (en) | 2000-12-29 | 2000-12-29 | Mask revision ID code circuit |
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US20020084331A1 US20020084331A1 (en) | 2002-07-04 |
US7120884B2 true US7120884B2 (en) | 2006-10-10 |
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US09/751,429 Expired - Lifetime US7120884B2 (en) | 2000-12-29 | 2000-12-29 | Mask revision ID code circuit |
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Cited By (4)
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US20060220013A1 (en) * | 2005-03-29 | 2006-10-05 | Bachman Steven C | Techniques for facilitating identification updates in an integrated circuit |
JP2008205222A (en) * | 2007-02-20 | 2008-09-04 | Sony Computer Entertainment Inc | Method for manufacturing semiconductor device, and semiconductor device |
US20120306560A1 (en) * | 2011-06-03 | 2012-12-06 | Himax Technologies Limited | Information generating apparatus and operation method thereof |
US20150323556A1 (en) * | 2012-09-26 | 2015-11-12 | Hitachi Aloka Medical, Ltd. | Specimen transportation system |
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FR2846790B1 (en) * | 2002-10-31 | 2005-10-28 | St Microelectronics Sa | DEVICE FOR DETERMINING THE MASK VERSION USED FOR EACH METAL LAYER OF AN INTEGRATED CIRCUIT |
JP2004253637A (en) * | 2003-02-20 | 2004-09-09 | Hitachi High-Technologies Corp | Semiconductor device and semiconductor manufacturing management system |
US20040188720A1 (en) * | 2003-03-25 | 2004-09-30 | Chew Kenneth S. | Bit-cell and method for programming |
US10068046B2 (en) | 2015-12-21 | 2018-09-04 | Silicon Laboratories Inc. | Systems and methods for tracking changes to and identifying layers of integrated circuit devices |
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