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US5073511A - Method for manufacturing a conductivity modulation mos semiconductor power device (himos) - Google Patents

Method for manufacturing a conductivity modulation mos semiconductor power device (himos) Download PDF

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US5073511A
US5073511A US07/330,182 US33018289A US5073511A US 5073511 A US5073511 A US 5073511A US 33018289 A US33018289 A US 33018289A US 5073511 A US5073511 A US 5073511A
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layer
thin
dopant
manufacturing
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US07/330,182
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Salvatore Musumeci
Cesare Ronsisvalle
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STMicroelectronics SRL
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SGS Thomson Microelectronics SRL
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Assigned to SGS-THOMSON MICROELECTRONICS S.R.L., ITALY reassignment SGS-THOMSON MICROELECTRONICS S.R.L., ITALY ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: MUSUMECI, SALVATORE, RONSISVALLE, CESARE
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs

Definitions

  • This invention relates to a method for manufacturing a conductivity modulation MOS power device (HIMOS device).
  • HIMOS transistors the limitation of the conventional type MOS power devices, deriving from the high resistance of the drain epitaxial region, are overcome by modulating the conductivity of the drain region by injecting minority carriers of a junction (P-N or N-P depending on whether it is an N-channel or a P-channel HIMOS) in series with the drain.
  • a thin (N+ type or P+ type, respectively) epitaxial buffer layer is often provided between the substrate (P+ or N+) and the epitaxial layer (N- or P-) constituting the aforesaid junction, so as to increase the amount of charge of the aforesaid epitaxial layer (N- P-).
  • the invention makes it possible to create a buffer layer with considerably higher concentrations of dopant than those which can be obtained by epitaxial growth, with the dual effect of protecting the device from the possibility of the parasitic thyristor being activated and of considerably reducing the HIMOS transistor turn-off time.
  • the manufacturing method according to the invention comprises, for the purpose of creating the aforesaid buffer layer, the following phases:
  • FIG. 1a shows the structure of a conventional type HIMOS power transistor
  • FIG. 1b shows the equivalent circuit of the structure of FIG. 1a;
  • FIG. 2 shows the structure of a HIMOS transistor with an epitaxial buffer layer
  • FIGS. 3a-3e show a schematic representation of a structure according to the invention, during the various phases of the manufacturing process
  • FIG. 3f shows the structure of a HIMOS transistor at the end of the manufacturing process according to the invention
  • FIGS. 4a and 4b show curves illustrating the concentrations of dopant in the buffer layer that can be obtained, respectively, with the conventional method and with the method according to the invention.
  • FIG. 1a shows the structure of a conventional type N-channel HIMOS power transistor.
  • the conductivity of the drain region is modulated by injecting minority carriers in the P-N junction, in series with the drain, consisting of the substrate P+ and the overlying epitaxial layer N-.
  • FIG. 1b shows the equivalent circuit of the structure of FIG. 1a and, particular, the intrinsic parasitic thyristor of the structure itself.
  • the current gain ⁇ is a function both of the thickness and of the concentration of basic dopant (in the sense that when each of these magnitudes is increased the gain decreases)
  • one of the most widely used solutions is that of adding a thin epitaxial layer (“buffer") N+ between the substrate P+ and the epitaxial layer N- (as shown in the sturcture of FIG. 2), so as to increase the amount of charge in the epitaxial region N- which is the base of the transistor pnp (in FIG. 2 the base of the transistor pnp consists of the epitaxial buffer layer N+ together with the epitaxial layer N-) thus obtaining a considerable reduction of ⁇ p.
  • buffer thin epitaxial layer
  • the known technique of creating the structure of FIG. 2 is that of sequentially growing the buffer layer N+ and the overlying region N- on the substrate P+ by the epitaxial technique and then proceeding to manufacture the device.
  • FIGS. 3a-3e schematically represent the structure of a device during the various phases of its manufacturing process.
  • the process starts with a substrate 1 of silicon P++(100) having a resistivity of 15-20 mohm.cm (FIG. 3a), on which is epitaxially grown a thin layer 4 of approximately 15 ⁇ m of P-type silicon (boron doped) having a resistivity of 25 ohm.cm (FIG. 3b).
  • the second epitaxial growth of the N-type layer 3 is carried out, with resistivity and thickness determined by the voltage BV DSS of the device to be produced (FIG. 3e).
  • the residual P-type thin layer (not essential for the purposes of the invention) is completely absorbed by the out-diffusion of the boron of the substrate, with consequent complete formation of the buffer layer 2.
  • the manufacturing ring process is exactly the same as that of any other MOS power device.
  • the structure of the finshed device is as shown in FIG. 3f.
  • the first epitaxial layer P (grown directly on the substrate P++) serves the purpose of buffering the out-diffusion of the boron of the substrate, since if the implantation were to be carried out directly on the substrate P++, during the subsequent high temperature thermal processes the boron in the substrate would spread towards the epitaxial layer and cause the buffer N+ to disappear, because the concentration of boron would exceed the concentration of antimony.
  • FIGS. 4a and 4b refer, respectively, to a HIMOS device produced according to the known technique and a similar device produced according to the invention, and enable a comparsion to be made between the doping obtainable with the conventional process and with the process according to the invention. They show the considerable increase in the concentration of dopant in the "buffer" layer made possible by the latter process.
  • the first epitaxial growth P on the substrate of P++ (FIG. 3b) is followed by the predeposition, instead of implantation, of the dopant antimony and the subsequent diffusion of the latter, reobtaining the structure of FIG. 3d; the rest of the process remains uncharged.
  • the process according to the previously described invention not only offers the advantages of greater safety against the danger of activating the parasitic thyristor and of reducing the tune-off times, but also the following advantages:
  • the first epitaxial layer grown on the structure P++ is of the P type (FIG. 3b) and not of N type, thus preventing the occurrence of autodoping (consisting in evaporation of the dopant of the substrate with consequent undesirable incorporation in the epitaxial layer);
  • the quantity of dopant in the layer N+ (buffer is more easily controlled with the ion implantation technique rather than with that of epitaxial growth, which has a dispersion of 8% both on the resistivity and on the thickness, resulting in a more precise optimization of the layer N+.

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  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

The thin buffer layer, very often present in HIMOS devices, is achieved by ion implantation or predeposition of the dopant followed by subsequent diffusion.

Description

This invention relates to a method for manufacturing a conductivity modulation MOS power device (HIMOS device). In HIMOS transistors, the limitation of the conventional type MOS power devices, deriving from the high resistance of the drain epitaxial region, are overcome by modulating the conductivity of the drain region by injecting minority carriers of a junction (P-N or N-P depending on whether it is an N-channel or a P-channel HIMOS) in series with the drain.
In order to make it less probable that the intrinsic parasitic thyristor of the structure itself be activated, a thin (N+ type or P+ type, respectively) epitaxial buffer layer is often provided between the substrate (P+ or N+) and the epitaxial layer (N- or P-) constituting the aforesaid junction, so as to increase the amount of charge of the aforesaid epitaxial layer (N- P-).
It is not possible, however, with epitaxial technique to create the buffer layer with concentration of dopant higher than 1016 atoms/cm3 ; and this greatly limits the efficiency of the aforesaid buffer layer.
The invention makes it possible to create a buffer layer with considerably higher concentrations of dopant than those which can be obtained by epitaxial growth, with the dual effect of protecting the device from the possibility of the parasitic thyristor being activated and of considerably reducing the HIMOS transistor turn-off time.
The manufacturing method according to the invention comprises, for the purpose of creating the aforesaid buffer layer, the following phases:
epitaxial growth, on the aforesaid substrate, of a thin semiconductor layer of the same type of conductivity as the substrate itself; and
ion implantation or deposition, in the aforesaid thin layer, of dopant of the type (N or P) required for creating the buffer layer, followed by subsequent diffusion.
The features of the invention will be more clearly evident from the following description and accompanying drawings of a non-restrictive embodiment in which:
FIG. 1a: shows the structure of a conventional type HIMOS power transistor;
FIG. 1b: shows the equivalent circuit of the structure of FIG. 1a;
FIG. 2: shows the structure of a HIMOS transistor with an epitaxial buffer layer;
FIGS. 3a-3e: show a schematic representation of a structure according to the invention, during the various phases of the manufacturing process;
FIG. 3f: shows the structure of a HIMOS transistor at the end of the manufacturing process according to the invention;
FIGS. 4a and 4b: show curves illustrating the concentrations of dopant in the buffer layer that can be obtained, respectively, with the conventional method and with the method according to the invention.
FIG. 1a shows the structure of a conventional type N-channel HIMOS power transistor. According to this structure, the conductivity of the drain region is modulated by injecting minority carriers in the P-N junction, in series with the drain, consisting of the substrate P+ and the overlying epitaxial layer N-.
FIG. 1b shows the equivalent circuit of the structure of FIG. 1a and, particular, the intrinsic parasitic thyristor of the structure itself. The parasitic thyristor is activated whenever the sum of the common-based current gains αn +αp of the two transistors npn and pnp (with αn =αnpn and =αpnp) reaches value 1. Consequently to avoid activating the parasitic thyristor it must be (αn +αp)<1. In practice, it is necessary to ensure that this condition is complied with by reducing the αp value as much as possible. Since the current gain α is a function both of the thickness and of the concentration of basic dopant (in the sense that when each of these magnitudes is increased the gain decreases), one of the most widely used solutions is that of adding a thin epitaxial layer ("buffer") N+ between the substrate P+ and the epitaxial layer N- (as shown in the sturcture of FIG. 2), so as to increase the amount of charge in the epitaxial region N- which is the base of the transistor pnp (in FIG. 2 the base of the transistor pnp consists of the epitaxial buffer layer N+ together with the epitaxial layer N-) thus obtaining a considerable reduction of αp.
The lowering of αp, equivalent to a decrease in the amount of minority charges (holes) injected from the substrate P+ and stored in the region N- during the conduction phase, also involves a considerable reduction in the turn-off times of the devices shown in FIG. 2 due to the smaller quantity of holes to be recombined.
The known technique of creating the structure of FIG. 2 is that of sequentially growing the buffer layer N+ and the overlying region N- on the substrate P+ by the epitaxial technique and then proceeding to manufacture the device.
It is not possible, however, with the epitaxial technique to create the buffer layer with a concentration of more than 1016 atoms/cm3, either for N-type or for P-type dopants. This shows the limited efficiency of this solution. On the contrary, with the solution proposed by the invention it is possible to create a buffer layer with a much higher concentration of dopant than is possible with epitaxial growth, thus obtaining a more drastic reduction both of αp and of turn-off times of the device.
The technique used for creating the buffer layer according to the invention is illustrated by the example shown in FIGS. 3a-3e, which schematically represent the structure of a device during the various phases of its manufacturing process.
The process starts with a substrate 1 of silicon P++(100) having a resistivity of 15-20 mohm.cm (FIG. 3a), on which is epitaxially grown a thin layer 4 of approximately 15 μm of P-type silicon (boron doped) having a resistivity of 25 ohm.cm (FIG. 3b).
A dose of 5·1014 atoms/cm2 of antimony is implanted on this epitaxial layer (FIG. 3c) and then the dopant Sb is diffused at a temperature T=1150° C. for two hours in order to form the layer N+ smaller in thickness than the first epitaxial layer grown (FIG. 3d).
At this point the second epitaxial growth of the N-type layer 3 is carried out, with resistivity and thickness determined by the voltage BVDSS of the device to be produced (FIG. 3e). In the manufacturing sequence (passage from FIG. 3d to FIG. 3e) the residual P-type thin layer (not essential for the purposes of the invention) is completely absorbed by the out-diffusion of the boron of the substrate, with consequent complete formation of the buffer layer 2.
Once the N-type layer 3 has been formed, the manufacturing ring process is exactly the same as that of any other MOS power device. The structure of the finshed device is as shown in FIG. 3f.
It should be pointed out that the first epitaxial layer P (grown directly on the substrate P++) serves the purpose of buffering the out-diffusion of the boron of the substrate, since if the implantation were to be carried out directly on the substrate P++, during the subsequent high temperature thermal processes the boron in the substrate would spread towards the epitaxial layer and cause the buffer N+ to disappear, because the concentration of boron would exceed the concentration of antimony.
FIGS. 4a and 4b refer, respectively, to a HIMOS device produced according to the known technique and a similar device produced according to the invention, and enable a comparsion to be made between the doping obtainable with the conventional process and with the process according to the invention. They show the considerable increase in the concentration of dopant in the "buffer" layer made possible by the latter process.
According to a further embodiment of the invention, the first epitaxial growth P on the substrate of P++ (FIG. 3b) is followed by the predeposition, instead of implantation, of the dopant antimony and the subsequent diffusion of the latter, reobtaining the structure of FIG. 3d; the rest of the process remains uncharged.
It is, of course, possible to use arsenic or phosphorus in place of antimony, both in the ion implantation and in the predeposition.
It is also obvious that the previously described process can also be used for P-channel HIMOS devices, starting from a substrate N and reversing the type of conductivity of all the susequent regions of FIG. 3.
With respect to the conventional process of FIG. 2, the process according to the previously described invention not only offers the advantages of greater safety against the danger of activating the parasitic thyristor and of reducing the tune-off times, but also the following advantages:
the first epitaxial layer grown on the structure P++ is of the P type (FIG. 3b) and not of N type, thus preventing the occurrence of autodoping (consisting in evaporation of the dopant of the substrate with consequent undesirable incorporation in the epitaxial layer);
The quantity of dopant in the layer N+ (buffer is more easily controlled with the ion implantation technique rather than with that of epitaxial growth, which has a dispersion of 8% both on the resistivity and on the thickness, resulting in a more precise optimization of the layer N+.

Claims (4)

We claim:
1. A method for manufacturing a P-channel conductivity modulation MOS semiconductor power device in which the conductivity of the drain region is modulated by the injection of minority carriers of an N-P junction in series with the drain, said junction comprising an N+ type semicondutor substrate over which lies in sequence an P+ type thin buffer and an P- type epitaxial layer, wherein the formation of said buffer layer comprises the following steps in sequence:
epitaxially growing a thin N type semiconductor layer on said semiconductor substrate;
ion implanting or depositing P type dopant in said thin semiconductor layer;
diffusing said dopant at a sufficient temperature and for a sufficient length of time of form a P+ layer; and
epitaxially growing said P- type epitaxial layer.
2. A manufacturing method as claimed im claim 1, wherein the temperature and the time at which said diffusion of the dopant in the thin semiconductor layer occurs are controlled so that the thickness of the resulting P+ layer is smaller than the original thickness of the thin layer.
3. A method for manufacturing an N-channel or P-channel conductivity modulation MOS semiconductor power device in which the conductivity of the drain region is modulated by the injection of minority carriers of a P-N or N-P junction in series with the drain, said junction comprising a P+ type or N+ type semiconductor substate over which lies sequence an N+ type or P+ type thin buffer layer and N- type or P- type epitaxial layer wherein the formation of said buffer layer comprises the following steps in sequence:
epitaxially growing a thin P type or N type semiconductor layer on said semiconductor substrate;
ion implanting or depositing N type or P type dopant in said thin semiconductor layer;
diffusing said dopant at a sufficient temperature and for a sufficient length of time to form a N+ or P+ layer; and
epitaxially growing said N- type or P- type epitaxial layer.
4. A manufacturing method as claimed in claim 3, wherein the temperature and the time at which said diffusion of the dopant in the thin semiconductor layer occurs are controlled so that the thickness of the resulting N+ or P+ layer is smaller than the original thickness of the thin layer.
US07/330,182 1988-03-29 1989-03-29 Method for manufacturing a conductivity modulation mos semiconductor power device (himos) Expired - Lifetime US5073511A (en)

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IT20005/88A IT1218200B (en) 1988-03-29 1988-03-29 MANUFACTURING PROCEDURE OF A MOS SEMICONDUCTIVE POWER DEVICE WITH CONDUCTIVITY MODULATION (HIMOS) AND DEVICES OBTAINED WITH IT
IT20005A/88 1988-03-29

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Cited By (7)

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US5432121A (en) * 1993-02-09 1995-07-11 Gi Corporation Method for fabricating a multilayer epitaxial structure
US5770880A (en) * 1996-09-03 1998-06-23 Harris Corporation P-collector H.V. PMOS switch VT adjusted source/drain
US5892787A (en) * 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
US6246092B1 (en) 1997-03-17 2001-06-12 Fuji Electric Co., Ltd. High breakdown voltage MOS semiconductor apparatus
CN100452429C (en) * 2003-05-19 2009-01-14 St微电子公司 High switch speed power device and its manufacturing method
WO2021128435A1 (en) * 2019-12-28 2021-07-01 汪克明 Novel principles and technology for semiconductor electronics, and device
US20240204097A1 (en) * 2008-03-26 2024-06-20 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same

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IT1241049B (en) * 1990-03-08 1993-12-29 Cons Ric Microelettronica HIGH REVERSE BREAKAGE IGBT SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING PROCESS
EP0583391B1 (en) * 1991-05-07 1997-10-15 Itzhak Sapir Apparatus for operating a conventional film camera in an electronic mode operation
JP2810821B2 (en) * 1992-03-30 1998-10-15 三菱電機株式会社 Semiconductor device and manufacturing method thereof
EP0725446A1 (en) * 1995-02-02 1996-08-07 Motorola, Inc. Insulated gate bipolar semiconductor device and method therefor
US5872028A (en) * 1996-09-05 1999-02-16 Harris Corporation Method of forming power semiconductor devices with controllable integrated buffer
KR20020045241A (en) * 2000-12-08 2002-06-19 윤종용 Apparatus for controlling power of display device in air conditioner

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5432121A (en) * 1993-02-09 1995-07-11 Gi Corporation Method for fabricating a multilayer epitaxial structure
US5892787A (en) * 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
US5770880A (en) * 1996-09-03 1998-06-23 Harris Corporation P-collector H.V. PMOS switch VT adjusted source/drain
US6246092B1 (en) 1997-03-17 2001-06-12 Fuji Electric Co., Ltd. High breakdown voltage MOS semiconductor apparatus
US6548865B2 (en) 1997-03-17 2003-04-15 Fuji Electric Co., Ltd. High breakdown voltage MOS type semiconductor apparatus
CN100452429C (en) * 2003-05-19 2009-01-14 St微电子公司 High switch speed power device and its manufacturing method
US20240204097A1 (en) * 2008-03-26 2024-06-20 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
WO2021128435A1 (en) * 2019-12-28 2021-07-01 汪克明 Novel principles and technology for semiconductor electronics, and device

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IT8820005A0 (en) 1988-03-29
EP0335445A1 (en) 1989-10-04
IT1218200B (en) 1990-04-12
JP3012246B2 (en) 2000-02-21
EP0335445B1 (en) 1993-11-03
JPH0210874A (en) 1990-01-16
KR890015353A (en) 1989-10-30
DE68910360D1 (en) 1993-12-09
DE68910360T2 (en) 1994-03-31

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