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US3925571A - Method of making a selenium charge carrier plate - Google Patents

Method of making a selenium charge carrier plate Download PDF

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Publication number
US3925571A
US3925571A US438831A US43883174A US3925571A US 3925571 A US3925571 A US 3925571A US 438831 A US438831 A US 438831A US 43883174 A US43883174 A US 43883174A US 3925571 A US3925571 A US 3925571A
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US
United States
Prior art keywords
selenium
charge carrier
layer
preparing
improved method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US438831A
Inventor
Karl Esser
John E Segain
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent NV
Original Assignee
International Standard Electric Corp
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Filing date
Publication date
Priority claimed from DE19732306157 external-priority patent/DE2306157C3/en
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
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Publication of US3925571A publication Critical patent/US3925571A/en
Assigned to ALCATEL N.V., DE LAIRESSESTRAAT 153, 1075 HK AMSTERDAM, THE NETHERLANDS, A CORP OF THE NETHERLANDS reassignment ALCATEL N.V., DE LAIRESSESTRAAT 153, 1075 HK AMSTERDAM, THE NETHERLANDS, A CORP OF THE NETHERLANDS ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: INTERNATIONAL STANDARD ELECTRIC CORPORATION, A CORP OF DE
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207—Selenium-based

Definitions

  • the present invention relates to a process of preparing a selenium charge carrier plate or foil wherein a non-conductive layer of selenium is evaporated onto a metal foil.
  • an image can be produced in that an image plate or drum coated with a photoconductive selenium layer, is charged to an electric potential and, by exposure, there is formed a charge distribution corresponding to the image pattern.
  • the image is made visible by means of a non-conductive electroscopic powder. This powder image is then transferred to a paper tape, and fixed thereon.
  • the selenium layer is deposited by evaporating the selenium under vacuum, and by condensing the vapor on the cold metal surface of the image plate or drum or foil respectively.
  • the temperature of this cold surface is usually kept below 50 C. In order to subject as much of the surface a possible to evaporation during the time unit, evaporation speed has up to now always been kept at a high deposition rate.
  • the inventive process is particularly suitable for charge carrier foils.
  • an intermediate layer which does not impair the electrical and imaging properties of the selenium layer.
  • This layer of lacquer consists of polyvinylacetal as the base material, to which there is added a portion of lampblack for increasing the conductivity, and which also contains ethyl acetal and methanol as non-conductive solvents. Since the surroundings are dust free, the surface of the layer of lacquer is very plane.
  • This layer is preferably deposited onto the metal foil in a thickness of l to 2 microns, and has a conductivity of about 1.5 siemens when containing a lampblack component of about Thereafter, the coated foil is tempered, i.e. is held in a heat furnace at a temperature of 150 C for a period of about 8 hours. Prior to this tempering heating process and the subsequent cooling, the layer of lacquer is polished by the application of pressure, in order to further improve the smooth surface finish.
  • the selenium is evaporated onto a metal surface of a layer support member to a thickness of about 60 microns under a pressure not exceeding about 10- torr (mm Hg) at a deposition rate of about 0.5 microns per minute.
  • the temperature of the metal backing member during the evaporation process is kept constant at about 60 C.
  • approximately 0.5 per cent by weight of arsenic is added to the layer of selenium during evaporation of the selenium.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)

Abstract

In a method for producing a charge carrier plate or foil having a non-conducting selenium layer for xerography, the selenium is deposited onto a carrier plate by evaporation in vacuum with a deposition rate of about 0.5 microns per minute.

Description

United States Patent Esser et a1. Dec. 9, 1975 METHOD OF MAKING A SELENIUM 2,962,376 11/1960 Schaffert 96/15 CHARGE CARRIER PLATE 3,226,253 12/1965 Gobrecht H 117/201 I 3,234,020 2/1966 Stockdale 96/115 1 Inventors: Karl Esser, Stem; John E. Segam, 3,467,548 9/1969 Straughan 117/106 R Gunzenhausen, both of Germany 3,598,644 8/1971 Goffe et a] 4 96/15 [73] Assignee: International Standard Electric 5 et 961m ork 117/216 Corporatmm New York 3,652,330 3/1972 Anderson 117/201 22 Filed: Feb 1 1974 3,709,683 [/1973 Cuiffini et a1 96/15 3,775,109 11/1973 Ohta et a1 96/15 21 A 1. N 438,831 1 pp 0 FOREIGN PATENTS OR APPLICATIONS 912,837 12/1962 U 't d K' d 96/18 [30] Foreign Application Priority Data m e mg 0m Feb. 8, 1973 Germany 2306157 Primary Examiner cameron K. Weiffenbach Attorney, Agent, or F1'rm.lohn T, OHalloran; [52] US. Cl. 427/76; 427/122; 427/248; Menom Lombardi, JR; Vincent lngrassia 427/372; 427/427; 96/15 [51] Int. C13. B44D 1/18 581 Field 61 Search 96/15; 117/201, 216, 215, [5-7] ABSHLCT 11 427/76 122v 248, 372, 427 In a method for producing a charge carrier plate or foil having a non-conducting selenium layer for xerog- [56] References Cited raphy, the selenium is deposited onto a carrier plate UNITED STATES PATENTS by evaporation in vacuum with a deposition rate of about 0.5 microns per minute. 2,739,079 3/1956 Keck H 117/201 2,753,278 7/1956 Bixby et a], .4 117/106 R 7 Claims, N0 Drawings METHOD OF MAKING A SELENIUM CHARGE CARRIER PLATE BACKGROUND OF THE INVENTION The present invention relates to a process of preparing a selenium charge carrier plate or foil wherein a non-conductive layer of selenium is evaporated onto a metal foil.
According to the known xerographic processes, an image can be produced in that an image plate or drum coated with a photoconductive selenium layer, is charged to an electric potential and, by exposure, there is formed a charge distribution corresponding to the image pattern. The image is made visible by means of a non-conductive electroscopic powder. This powder image is then transferred to a paper tape, and fixed thereon.
As a support member for the photoconductive selenium layer, it is also known to use, instead of an image plate or drum, a flexible, tape-type metal foil. This reduces the size of the known electro-photographic copying machines operating according to this process.
As a rule, the selenium layer is deposited by evaporating the selenium under vacuum, and by condensing the vapor on the cold metal surface of the image plate or drum or foil respectively. The temperature of this cold surface is usually kept below 50 C. In order to subject as much of the surface a possible to evaporation during the time unit, evaporation speed has up to now always been kept at a high deposition rate.
The inventive process is particularly suitable for charge carrier foils.
However, care must be taken to provide sufficient adhesion of the selenium layer which is relatively brittle, because the carrier foil is led in the copying machine around transport rollers and is bent in accordance with the diameter thereof. For this purpose, there is provided an intermediate layer which does not impair the electrical and imaging properties of the selenium layer. This is accomplished by spraying a conductive layer of lacquer onto the metal foil in a dust-free room, which layer serves as the intermediate layer. This layer of lacquer consists of polyvinylacetal as the base material, to which there is added a portion of lampblack for increasing the conductivity, and which also contains ethyl acetal and methanol as non-conductive solvents. Since the surroundings are dust free, the surface of the layer of lacquer is very plane. This layer is preferably deposited onto the metal foil in a thickness of l to 2 microns, and has a conductivity of about 1.5 siemens when containing a lampblack component of about Thereafter, the coated foil is tempered, i.e. is held in a heat furnace at a temperature of 150 C for a period of about 8 hours. Prior to this tempering heating process and the subsequent cooling, the layer of lacquer is polished by the application of pressure, in order to further improve the smooth surface finish.
SUMMARY OF THE INVENTION It is an object of the present invention to improve the electrophotographic imaging quality of the selenium layer, especially with respect to its richness in contrast.
According to a broad aspect of the invention, there is provided an improved method of preparing a selenium charge carrier plate wherein a non-conducting layer of selenium is evaporated onto a metal substrate wherein the improvement comprises evaporating said selenium at a deposition rate of approximately 0.5 microns per minute.
The above and other objects of the invention will be better understood from the following detailed description.
DESCRIPTION OF THE PREFERRED EMBODIMENT The selenium is evaporated onto a metal surface of a layer support member to a thickness of about 60 microns under a pressure not exceeding about 10- torr (mm Hg) at a deposition rate of about 0.5 microns per minute. The temperature of the metal backing member during the evaporation process is kept constant at about 60 C. For avoiding crystallization of the selenium layer, approximately 0.5 per cent by weight of arsenic is added to the layer of selenium during evaporation of the selenium.
'By the reduction of the deposition rate, it is possible to achieve substantially higher electric charge potentials, as well as considerably improved properties with respect to the dark discharge of the selenium layer.
It is to be understood that the foregoing description of specific examples of this invention is made by way of example only and is not to be considered as a limiation on its scope.
We claim:
1. An improved method of preparing a selenium charge carrier foil for use in a copying machine wherein a non-conducting layer of selenium is evaporated onto a metal substrate wherein the improvement comprises:
spraying a layer of conductive lacquer onto a flexible charge carrier metal foil; and
evaporating a non-conducting layer of selenium onto said layer of conductive lacquer at a deposition rate of approximately 0.5 microns per minute.
2. An improved method of preparing a selenium charge carrier foil according to claim I, wherein said selenium is evaporated under a pressure less than 10 torr (mm Hg).
3. An improved method of preparing a selenium charge carrier foil according to claim 1, wherein said metal substrate is kept at a temperature of substantially 60C during evaporation.
4. An improved method of preparing a selenium charge carrier foil according to claim 1, wherein said selenium layer is approximately 60 microns thick.
5. An improved method of preparing a selenium charge carrier foil according to claim 1, wherein said layer of conducting lacquer consists of polyvinylacetal as a base material containing the additive lampblack for increasing conductivity.
6. An improved method of preparing a selenium charge carrier foil according to claim 1, wherein said metal foil has a thickness of l to 2 microns.
7. An improved method of preparing a selenium charge carrier foil according to claim 6, further including the step of tempering the coated foil.

Claims (7)

1. AN IMPROVED METHOD OF PREPARING A SEALENIUM CHARGE CARRIER FOIL FOR USE IN A COPYING MACHINE WHEREIN A NON-CONDUCTING LAYER OF SELENIUM IS E VAPORATED ONTO A METAL SUBSTRATE WHEREIN THE IMPROVEMENT COMPRISES: SPRAYING A LAYER OF CONDUCTIVE LACQUER ONTO A FLEXIBLE CHARGE CARRIER METAL FOIL; AND EVAPORATING A NON-CONDUCTING LAYER OF SELENIUM ONTO SAID LAYER OF CONDUCTIVE LACQUER AT A DEPOSITION RATE OF APPROXIMATELY 0.5 MICRONS PER MINUTE.
2. An improved method of preparing a selenium charge carrier foil according to claim 1, wherein said selenium is evaporated under a pressure less than 10 4 torr (mm Hg).
3. An improved method of preparing a selenium charge carrier foil according to claim 1, wherein said metal substrate is kept at a temperature of substantially 60*C during evaporation.
4. An improved method of preparing a selenium charge carrier foil according to claim 1, wherein said selenium layer is approximately 60 microns thick.
5. An improved method of preparing a selenium charge carrier foil according to claim 1, wherein said layer of conducting lacquer consists of polyvinylacetal as a base material containing the additive lampblack for increasing conductivity.
6. An improved method of preparing a selenium charge carrier foil according to claim 1, wherein said metal foil has a thickness of 1 to 2 microns.
7. An improved method of preparing a selenium charge carrier foil according to claim 6, further including the step of tempering the coated foil.
US438831A 1973-02-08 1974-02-01 Method of making a selenium charge carrier plate Expired - Lifetime US3925571A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732306157 DE2306157C3 (en) 1973-02-08 Process for the production of an electrophotographic recording material

Publications (1)

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US3925571A true US3925571A (en) 1975-12-09

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US (1) US3925571A (en)
JP (1) JPS516544B2 (en)
AU (1) AU6539974A (en)
BR (1) BR7400884D0 (en)
CH (1) CH567745A5 (en)
ES (1) ES422990A1 (en)
FR (1) FR2217734B1 (en)
GB (1) GB1455887A (en)
NL (1) NL7401392A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588667A (en) * 1984-05-15 1986-05-13 Xerox Corporation Electrophotographic imaging member and process comprising sputtering titanium on substrate

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2739079A (en) * 1952-02-18 1956-03-20 Paul H Keck Method of making photosensitive plates
US2753278A (en) * 1951-04-14 1956-07-03 Haloid Co Method for the production of a xerographic plate
US2962376A (en) * 1958-05-14 1960-11-29 Haloid Xerox Inc Xerographic member
US3226253A (en) * 1960-08-23 1965-12-28 Int Standard Electric Corp Method of producing photosensitive layers of lead selenide
US3234020A (en) * 1961-06-21 1966-02-08 Xerox Corp Plate for electrostatic electrophotography
US3467548A (en) * 1963-07-08 1969-09-16 Xerox Corp Method of making xerographic plate by vacuum evaporation of selenium alloy
US3598644A (en) * 1964-10-12 1971-08-10 Xerox Corp Imaging member fabrication
US3615413A (en) * 1969-06-23 1971-10-26 Xerox Corp Indium doping of selenium-arsenic photoconductive alloys
US3639121A (en) * 1969-03-03 1972-02-01 Eastman Kodak Co Novel conducting lacquers for electrophotographic elements
US3652330A (en) * 1970-09-14 1972-03-28 Schjeldahl Co G T Process for coating amorphous selenium
US3709683A (en) * 1970-12-18 1973-01-09 Xerox Corp Infrared sensitive image retention photoreceptor
US3775109A (en) * 1969-05-22 1973-11-27 Ricoh Kk Electrophotographic photosensitive plate

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2753278A (en) * 1951-04-14 1956-07-03 Haloid Co Method for the production of a xerographic plate
US2739079A (en) * 1952-02-18 1956-03-20 Paul H Keck Method of making photosensitive plates
US2962376A (en) * 1958-05-14 1960-11-29 Haloid Xerox Inc Xerographic member
US3226253A (en) * 1960-08-23 1965-12-28 Int Standard Electric Corp Method of producing photosensitive layers of lead selenide
US3234020A (en) * 1961-06-21 1966-02-08 Xerox Corp Plate for electrostatic electrophotography
US3467548A (en) * 1963-07-08 1969-09-16 Xerox Corp Method of making xerographic plate by vacuum evaporation of selenium alloy
US3598644A (en) * 1964-10-12 1971-08-10 Xerox Corp Imaging member fabrication
US3639121A (en) * 1969-03-03 1972-02-01 Eastman Kodak Co Novel conducting lacquers for electrophotographic elements
US3775109A (en) * 1969-05-22 1973-11-27 Ricoh Kk Electrophotographic photosensitive plate
US3615413A (en) * 1969-06-23 1971-10-26 Xerox Corp Indium doping of selenium-arsenic photoconductive alloys
US3652330A (en) * 1970-09-14 1972-03-28 Schjeldahl Co G T Process for coating amorphous selenium
US3709683A (en) * 1970-12-18 1973-01-09 Xerox Corp Infrared sensitive image retention photoreceptor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588667A (en) * 1984-05-15 1986-05-13 Xerox Corporation Electrophotographic imaging member and process comprising sputtering titanium on substrate

Also Published As

Publication number Publication date
CH567745A5 (en) 1975-10-15
BR7400884D0 (en) 1974-11-05
DE2306157B2 (en) 1976-11-18
GB1455887A (en) 1976-11-17
AU6539974A (en) 1975-08-14
FR2217734A1 (en) 1974-09-06
NL7401392A (en) 1974-08-12
JPS516544B2 (en) 1976-02-28
DE2306157A1 (en) 1974-08-15
ES422990A1 (en) 1976-05-01
FR2217734B1 (en) 1980-11-07
JPS49126339A (en) 1974-12-03

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AS Assignment

Owner name: ALCATEL N.V., DE LAIRESSESTRAAT 153, 1075 HK AMSTE

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:INTERNATIONAL STANDARD ELECTRIC CORPORATION, A CORP OF DE;REEL/FRAME:004718/0023

Effective date: 19870311