US3925261A - Exponential resistance material and method of manufacturing same - Google Patents
Exponential resistance material and method of manufacturing same Download PDFInfo
- Publication number
- US3925261A US3925261A US489182A US48918274A US3925261A US 3925261 A US3925261 A US 3925261A US 489182 A US489182 A US 489182A US 48918274 A US48918274 A US 48918274A US 3925261 A US3925261 A US 3925261A
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- United States
- Prior art keywords
- meo
- composition
- resistance
- resistance element
- voltage drop
- Prior art date
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- Expired - Lifetime
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- 239000000463 material Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 39
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052788 barium Inorganic materials 0.000 claims abstract description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 6
- 239000011575 calcium Substances 0.000 claims abstract description 6
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 6
- 239000010941 cobalt Substances 0.000 claims abstract description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052742 iron Inorganic materials 0.000 claims abstract description 6
- 239000011133 lead Substances 0.000 claims abstract description 6
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 6
- 239000011777 magnesium Substances 0.000 claims abstract description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 6
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 6
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 claims abstract 6
- 238000000034 method Methods 0.000 claims description 13
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 2
- 239000008240 homogeneous mixture Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims 8
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims 8
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 claims 4
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 claims 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052804 chromium Inorganic materials 0.000 abstract description 3
- 239000011651 chromium Substances 0.000 abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000011787 zinc oxide Substances 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
Definitions
- MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chr0- mium, nickel, antimony, and mixtures thereof. An improved method of manufacturing such a resistance material is also described.
- the invention relates to a resistance material wherein the resistance varies exponentially with the voltage drop and, more particularly, relates to a sintered ceterminal wires (pigtails) can be attached.
- invention also relates to a method of manufacturing such material.
- Such resistance materials are well known and have been made from, for example, silicon carbide, titanium dioxide or zinc oxide.
- the voltage drop across elements made from such materials is given by the following equation:
- n is, therefore, a direct measure of the magnitude of non-linearity based on p-n-transitions, on the contact among the individual grains, or on the material itself.
- the B-value of a non-linear resistance element may be varied by sintering at varying temperatures and under different atmospheres. It is further known to adjust the B-value through the thickness of the resistance elements. Both procedures permit only a limited possibility of variation. Thus, when there is a change in temperature the desired n-value, in many cases, is not attained and when there is a change in thickness, desired small increments of resistance often are not attainable.
- the first object is particularly advantageously solved by a composition
- a composition comprising about 50-90% ZnO, about 0.1 40% ZnF and about 0.1 40% MeO; wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chromium, nickel, antimony, and mixtures thereof.
- the B-value of the material may be varied within wide ranges by changing the ratio of the two components ZnO and ZnF,. If, meanwhile, the metal oxide content is kept unchanged, the n-value of the material remains nearly constant. However the nvalue can be adjusted to many values by varying the MeO content.
- composition adapted for use as an electrical resistance element wherein the electrical resistance varies exponentially with the voltage drop across the elementksaigl vp ltage drop being given by the equation:
- E is said voltage drop
- I is the current through the element
- B is a constant equal to the voltagevalue at which the current is equal to l Ampere
- n is a number
- said composition comprising about 50-90% ZnO, about 0.1 40% ZnF and about 0.1 40% MeO; wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chromium, nickel, antimony, and mixtures thereof.
- composition according to claim 1 in which the ZnF proportion is about l8% and the MeO content is about 246%.
- composition according to claim 1 wherein said MeO is approximately equal molar proportions of Bizoa, C030, Mnoz, and Sb203.
- composition according to claim 2 wherein said MeO is approximately equal molar proportions of Bigoa, C0304, M1102, and sbgoa.
- composition according to claim 1 wherein said composition is in the form of a resistance element.
- the method of manufacturing a composition adaptable for use as an electrical resistance element comprises the steps of a. forming a homogeneous mixture of about 50-90% ZnO, about 0.1 40% ZnF and about 0.1 40% MeO wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chronium, nickel, antimony, and mixtures thereof;
- MeO is approximately equal molar proportions of Blzoa, C0304, Mnoz, and Sb203.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
A voltage drop across a resistance element, wherein the resistance varies exponentially with the voltage, is expressed by the equation: E B X I1/n WHEREIN I is the current through the element, B is a constant and is equal to the voltage value at which the current through the element is equal to 1 Ampere, and E is the voltage drop. To achieve a variable B-value based on the resistance material itself and furthermore to achieve a greater dependence of the resistance on the voltage drop, the value of n can be selectively raised by varying the composition of the resistance element as follows: 50 - 90% ZnO 0.1 - 40% ZnF2 0.1 - 40% MeO wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chromium, nickel, antimony, and mixtures thereof. An improved method of manufacturing such a resistance material is also described.
Description
United States Patent 91 Lauterbach-Dammler EXPONENTIAL RESISTANCE MATERIAL AND METHOD OF MANUFACTURING SAME [75] Inventor: Inge Lauterbach-Dammler,
[30] Foreign Application Priority Data July 18, 1973 Germany .t 2336504 [52] US. Cl. 252/519; 252/518; 252/520; 264/61; 264/67; 264/104 [51] Int. Cl. 01B 1/08 [53] Field of Search 252/518-521; 264/67, 61, 104
[56] References Cited UNITED STATES PATENTS 3,642,664 2/1972 Masuyama et a1 252/519 3,658,725 4/1972 Masuyama et a1 .t 252/519 X Primary Examiner-Benjamin R. Padgett Assistant Examiner-E. Suzanne Parr Attorney, Agent, or Firm-Gifford, Chandler & Sheridan 1 Dec. 9, 1975 [57 ABSTRACT A voltage drop across a resistance element, wherein the resistance varies exponentially with the voltage, is expressed by the equation:
E a x 1" wherein I is the current through the element, B is a constant and is equal to the voltage value at which the current through the element is equal to l Ampere, and E is the voltage drop. To achieve a variable B-value based on the resistance material itself and furthermore to achieve a greater dependence of the resistance on the voltage drop, the value of n can be selectively raised by varying the composition of the resistance element as follows:
50 90% ZnO 0.1 40% ZnF 0.1 40% MeO wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chr0- mium, nickel, antimony, and mixtures thereof. An improved method of manufacturing such a resistance material is also described.
10 Claims, No Drawings EXPONENTIAL RESISTANCE MATERIAL AND METHOD OF MANUFACTURING SAME BACKGROUND OF THE INVENTION The invention relates to a resistance material wherein the resistance varies exponentially with the voltage drop and, more particularly, relates to a sintered ceterminal wires (pigtails) can be attached.
ramic material for non-linear resistance elements. The
invention also relates to a method of manufacturing such material.
Such resistance materials are well known and have been made from, for example, silicon carbide, titanium dioxide or zinc oxide. The voltage drop across elements made from such materials is given by the following equation:
wherein E is the voltage drop over the element, I is the current flowing through the element, and B is a constant reflecting the voltage value at current I 1 Ampere. The exponent n is, therefore, a direct measure of the magnitude of non-linearity based on p-n-transitions, on the contact among the individual grains, or on the material itself.
It is known that the B-value of a non-linear resistance element may be varied by sintering at varying temperatures and under different atmospheres. It is further known to adjust the B-value through the thickness of the resistance elements. Both procedures permit only a limited possibility of variation. Thus, when there is a change in temperature the desired n-value, in many cases, is not attained and when there is a change in thickness, desired small increments of resistance often are not attainable.
DESCRIPTION OF THE INVENTION It is therefore an object underlying the invention to provide a composition wherein the electrical resistance is greatly dependent on voltage and thus has a large nvalue anda variable B-value based on the material itself.
It is a further object to provide a method of manufacturing such a composition.
The first object is particularly advantageously solved by a composition comprising about 50-90% ZnO, about 0.1 40% ZnF and about 0.1 40% MeO; wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chromium, nickel, antimony, and mixtures thereof. According to the invention, the B-value of the material may be varied within wide ranges by changing the ratio of the two components ZnO and ZnF,. If, meanwhile, the metal oxide content is kept unchanged, the n-value of the material remains nearly constant. However the nvalue can be adjusted to many values by varying the MeO content.
The following Examples and the Table explain in more detail the relationship of the electric properties of the compositions of the invention and the method of manufacture of the compositions.
EXAMPLE 1 Two mole each of Bi O C0 0,, MnO, and Sb O (a preferred composition) were homogeneously mixed with varying amounts of ZnO and ZnF After a presintering at 600C the material was ground, compacted to As can be seen from the values in Table l, the B- value increases nearly linearly with increasing ZnF content, whereas the n-value of 20 to 25 remains nearly constant.
EXAMPLE 2 Three mole of each of Bi.,o,, C0 0 Mn0 and Sb O were homogeneously mixed together with varying amounts of ZnO and ZnF and were further processed according to the procedure described in Example l.
The electrical values of the resulting element are listed in Table 1 (numbers 7-9). A comparison with Examples 1 to 6 shows that a small change in the metal oxide content effects a considerable change in the nvalue.
Repetition of the fore going examples with a wide variety of compositions having difiering ZnO to ZnF, ratios and difiering proportions of the oxides of the invention established that the advantages of the invention were attained when the ZnO was in the range of about 50-90%, the ZnF, was in the range of about 0.1 40%, and the MeO was in the range of about 0.1 40%. Further, the composition was found to be particularly useful when the ZnF content was about 1-8% and the MeO content was about 2-l6%.
Similarly, repetition of the above examples with presintering at various temperatures and annealing the formed element at various temperatures showed that the best forming conditions for the resistance mate rial was presintering at about 600900C and annealing at about lO00-l400C.
It is, of course, to be understood that the present invention is not limited to the specific examples given, but also comprises any modifications within the scope of the appended claims.
I claim:
1. A composition adapted for use as an electrical resistance element wherein the electrical resistance varies exponentially with the voltage drop across the elementksaigl vp ltage drop being given by the equation:
X I wherein E is said voltage drop; I is the current through the element, B is a constant equal to the voltagevalue at which the current is equal to l Ampere, and n is a number; said composition comprising about 50-90% ZnO, about 0.1 40% ZnF and about 0.1 40% MeO; wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chromium, nickel, antimony, and mixtures thereof.
2. The composition according to claim 1 in which the ZnF proportion is about l8% and the MeO content is about 246%.
3. The composition according to claim 1 wherein said MeO is approximately equal molar proportions of Bizoa, C030, Mnoz, and Sb203.
4. The composition according to claim 2 wherein said MeO is approximately equal molar proportions of Bigoa, C0304, M1102, and sbgoa.
5. The composition according to claim 1 wherein said composition is in the form of a resistance element.
6. The method of manufacturing a composition adaptable for use as an electrical resistance element which method comprises the steps of a. forming a homogeneous mixture of about 50-90% ZnO, about 0.1 40% ZnF and about 0.1 40% MeO wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chronium, nickel, antimony, and mixtures thereof;
b. sintering said mixture at about 600-900C.;
c. grinding the sintered mixture;
d. compacting the resulting mixture; and
e. annealing the resulting material at about 1000 7. The method according to claim 6 wherein said ground mixture is compacted to the form of a resistance element.
8. The method according to claim 6 wherein said MeO is approximately equal molar proportions of Blzoa, C0304, Mnoz, and Sb203.
9. The method according to claim 7 wherein said MeO is approximately equal molar proportions of Bi o C0 0 Mno and Sb O 10. The method according to claim 6 and further comprising the step of positioning metal electrical contacts on portions of said resistance element.
Claims (10)
1. A COMPOSITION ADAPTED FOR USE AS AN ELECTRICAL RESISTANCE ELEMENT WHEREIN THE ELECTRICAL RESISTANCE VERIES EXPONENTIALLY WITH THE VOLTAGE DROP ACROSS THE ELEMENT, SAID VOLTAGE DROP BEING GIVEN BY THE EQUATION:
2. The composition according to claim 1 in which the ZnF2 proportion is about 1-8% and the MeO content is about 2-16%.
3. The composition according to claim 1 wherein said MeO is approximately equal molar proportions of Bi2O3, Co3O4, MnO2, and Sb2O3.
4. The composition according to claim 2 wherein said MeO is approximately equal molar proportions of Bi2O3, Co3O4, MnO2, and Sb2O3.
5. The composition according to claim 1 wherein said composition is in the form of a resistance element.
6. The method of manufacturing a composition adaptable for use as an electrical resistance element which method comprises the steps of a. forming a homogeneous mixture of about 50-90% ZnO, about 0.1 - 40% ZnF2, and about 0.1 - 40% MeO wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chronium, nickel, antimony, and mixtures thereof; b. sintering said mixture at about 600*-900*C.; c. grinding the sintered mixture; d. compacting the resulting mixture; and e. annealing the resulting material at about 1000* - 1400*C.
7. The method according to claim 6 wherein said ground mixture is compacted to the form of a resistance element.
8. The method according to claim 6 wherein said MeO is approximately equal molar proportions of Bi2O3, Co3O4, MnO2, and Sb2O3.
9. The method according to claim 7 wherein said MeO is approximately equal molar proportions of Bi2O3, Co3O4, MnO2, and Sb2O3.
10. The method according to claim 6 and further comprising the step of positioning metal electrical contacts on portions of said resistance element.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732336504 DE2336504C3 (en) | 1973-07-18 | Voltage-dependent resistor body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3925261A true US3925261A (en) | 1975-12-09 |
Family
ID=5887280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US489182A Expired - Lifetime US3925261A (en) | 1973-07-18 | 1974-07-16 | Exponential resistance material and method of manufacturing same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3925261A (en) |
| FR (1) | FR2237860B1 (en) |
| GB (1) | GB1461116A (en) |
| IE (1) | IE39620B1 (en) |
| IT (1) | IT1017155B (en) |
| NL (1) | NL7409767A (en) |
| SE (1) | SE395788B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4086189A (en) * | 1975-11-14 | 1978-04-25 | Otowa Electric Company, Ltd. | Resistive element having voltage non-linearity and method of making same |
| US4127511A (en) * | 1976-07-01 | 1978-11-28 | Bbc Brown, Boveri & Company, Limited | Ceramic electrical resistor with nonlinear voltage characteristic |
| US4180483A (en) * | 1976-12-30 | 1979-12-25 | Electric Power Research Institute, Inc. | Method for forming zinc oxide-containing ceramics by hot pressing and annealing |
| US4474718A (en) * | 1981-07-27 | 1984-10-02 | Electric Power Research Institute | Method of fabricating non-linear voltage limiting device |
| US5660878A (en) * | 1991-02-06 | 1997-08-26 | Commissariat A L'energie Atomique | Process for the reduction of breakdown risks of the insulant of high voltage cable and lines during their aging |
| US5889459A (en) * | 1995-03-28 | 1999-03-30 | Matsushita Electric Industrial Co., Ltd. | Metal oxide film resistor |
| US6198377B1 (en) * | 1994-07-13 | 2001-03-06 | Matsushita Electric Industrial Co., Ltd. | Plastic thermistor and thermosensitive device comprising the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3642664A (en) * | 1969-05-02 | 1972-02-15 | Matsushita Electric Ind Co Ltd | Voltage variable resistor |
| US3658725A (en) * | 1970-07-24 | 1972-04-25 | Matsushita Electric Ind Co Ltd | Nonlinear resistor and nonlinear resistor composition |
-
1974
- 1974-07-15 IT IT25169/74A patent/IT1017155B/en active
- 1974-07-15 GB GB3123374A patent/GB1461116A/en not_active Expired
- 1974-07-16 US US489182A patent/US3925261A/en not_active Expired - Lifetime
- 1974-07-16 IE IE1507/74A patent/IE39620B1/en unknown
- 1974-07-17 SE SE7409336A patent/SE395788B/en unknown
- 1974-07-17 FR FR7424835A patent/FR2237860B1/fr not_active Expired
- 1974-07-18 NL NL7409767A patent/NL7409767A/en not_active Application Discontinuation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3642664A (en) * | 1969-05-02 | 1972-02-15 | Matsushita Electric Ind Co Ltd | Voltage variable resistor |
| US3658725A (en) * | 1970-07-24 | 1972-04-25 | Matsushita Electric Ind Co Ltd | Nonlinear resistor and nonlinear resistor composition |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4086189A (en) * | 1975-11-14 | 1978-04-25 | Otowa Electric Company, Ltd. | Resistive element having voltage non-linearity and method of making same |
| US4127511A (en) * | 1976-07-01 | 1978-11-28 | Bbc Brown, Boveri & Company, Limited | Ceramic electrical resistor with nonlinear voltage characteristic |
| US4180483A (en) * | 1976-12-30 | 1979-12-25 | Electric Power Research Institute, Inc. | Method for forming zinc oxide-containing ceramics by hot pressing and annealing |
| US4474718A (en) * | 1981-07-27 | 1984-10-02 | Electric Power Research Institute | Method of fabricating non-linear voltage limiting device |
| US5660878A (en) * | 1991-02-06 | 1997-08-26 | Commissariat A L'energie Atomique | Process for the reduction of breakdown risks of the insulant of high voltage cable and lines during their aging |
| US6198377B1 (en) * | 1994-07-13 | 2001-03-06 | Matsushita Electric Industrial Co., Ltd. | Plastic thermistor and thermosensitive device comprising the same |
| US5889459A (en) * | 1995-03-28 | 1999-03-30 | Matsushita Electric Industrial Co., Ltd. | Metal oxide film resistor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2336504B2 (en) | 1975-11-20 |
| DE2336504A1 (en) | 1975-06-12 |
| FR2237860B1 (en) | 1979-04-13 |
| FR2237860A1 (en) | 1975-02-14 |
| IT1017155B (en) | 1977-07-20 |
| GB1461116A (en) | 1977-01-13 |
| IE39620B1 (en) | 1978-11-22 |
| NL7409767A (en) | 1975-01-21 |
| IE39620L (en) | 1975-01-18 |
| SE395788B (en) | 1977-08-22 |
| SE7409336L (en) | 1975-01-20 |
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