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US3342970A - Apparatus for crucible-free zone melting - Google Patents

Apparatus for crucible-free zone melting Download PDF

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Publication number
US3342970A
US3342970A US430361A US43036165A US3342970A US 3342970 A US3342970 A US 3342970A US 430361 A US430361 A US 430361A US 43036165 A US43036165 A US 43036165A US 3342970 A US3342970 A US 3342970A
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US
United States
Prior art keywords
rod
concentrator
coil
melting
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US430361A
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English (en)
Inventor
Emeis Reimer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Application granted granted Critical
Publication of US3342970A publication Critical patent/US3342970A/en
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Definitions

  • Apparatus for crucible-free zone melting of a crystalline rod includes an induction heating coil for forming a melting zone in the rod.
  • the coil surrounds and is spaced from the rod and is energizable to produce an inductive heating field around the rod.
  • the coil and rod are relatively movable in the direction of the rod axis so as to pass the melting zone along the rod.
  • the rod extends through an opening of a concentrator device which is located in the field between the heating coil and the melting zone and comprises a plurality of parts movable relative to each other within the field for varying the size of the opening so as to accommodate rods of respectively varying cross section therein.
  • the concentrator device can be a subdivided ring with a silver surface, the subdivision of the ring being radially movable, or can comprise a pair of silvered metal strips aligned end to end and formed 3,,34Z,9 70 Patented Sept. '19, 1967 ticularly of semiconductor material, having two holders gripping the ends of the body and an induction coil surrounding and spaced from the rod for producing the melting zone in the rod, the induction coil being movable relative to the longitudinal axis of the rod.
  • a concentrator device surrounding the rod is arranged in the field between the heating coil and the melting zone.
  • the concentrator is divided into a plurality of parts adjustable with respect to each other so as to vary the area encompassed thereby.
  • My invention relates to apparatus for crucible-free zone melting of a rod-shaped member of crystalline material.
  • Such apparatus is known in diiferent embodiments.
  • a crystalline rod that is to be processed is located in an evacuated vessel or in a vessel filled with protective gas.
  • the rod consists, for example, of a semiconductor material such as germanium orsilicon, or a metal, such as tungsten or molybdenum.
  • the ends of the rod are gripped by holders and the rod is usually located in a vertical position.
  • a heating device heats the rod along a narrow length thereof and thus forms a melting zone. This melting zone is passed along the length of the rod through relative movement of the heating device and the rod with respect to the longitudinal axis of the rod.
  • an induction heating coil which surrounds and is spaced from the rod, serves as a heating device for the production of the melting zone.
  • the heating coil can be energized with a current having a frequency of 1-5 MHz.
  • the semiconductor body can thus be melted by inductive heating produced by the coil.
  • the heating coil must surround the semiconductor rod relatively closely, in order to provide good coupling. This, of course, limits the growth diameter of the rod.
  • a further object of the invention is to provide a device which would aid also in producing crystalline rods whose cross-sectional dimensions vary along the rod length.
  • FIG. 1 is an elevational view of an embodiment of my invention showing a concentrator and induction heating coil in position around the molten zone of a crystalline rod.
  • FIG. 2 is a top plan view of FIG. 1 with the induction heating coil removed.
  • FIGS. 3 and 4 areplan and elevational views, respectively, of an additional embodiment of a concentrator constructed in accordance with my invention.
  • a melting zone 4 produced in a rod-shaped body 2, which may, for example, have a circular cross section.
  • the melting zone 4 is produced by heating with an induction heating coil 3, which may be in the form of a fiat, helically wound coil.
  • the field of the heat-' ing coil 3 is concentrated by a concentrator device consisting of the parts 5a, 5b, 5c and 5d (FIG. 2).
  • Concentrators per se are known from the inductive heating arts. They constitute divided or split rings of electrically conductive material which are located in the field of an induction coil.
  • a closed ring does not constitute a concentrator, because, with a closed ring, a field opposite to the field of the heating coil is produced, and the heating effect is completely nullified.
  • a concentrator is used for crucible-free zone melting
  • it can consist, preferably, of silver or of a copper component provided with a silver coating and connected preferably to a cooling loop, for example a water cooling system.
  • the German published patent application No. 1,094,710 discloses a method by means of which monocrystals are produced byseed crystals 'having a diameter considerably smaller than that of the semiconductor rod being processed.
  • FIG. 1 shows such a crystal seed 6.
  • the narrow crystal seed may have a diameter of approximately 3 to 5 mm.
  • the semiconductor rod 2 may have a diameter of 12 to 40 mm.
  • FIG. 2 indicates by the double-headed arrows the directions of motion of the parts 5a-5d of the concentrator 5,
  • the device of my invention is also especially employable in cases where a desired change in the cross section of the rod, i.e. an enlargement or reduction, is tobe effected by means of the crucible-free zone melting process.
  • FIGS. 1 and 2 illustrate a concentrator which has a circular ring-shaped cross section and which is subdivided into four parts. It is, of course, understood that the concentrator may also be divided into two or three or more than four parts.
  • the shape of the opening in the concentrator may also conform to the cross sectional shape of the rod being treated which can be square or rectangular, for example.
  • FIGS. 3 and 4 show another embodiment of a concentrator according to the invention pnd consisting of two strips 11 and 12, aligned end to end and formed with V- shaped notches at the mutually adjacent ends.
  • the strips 11, 12 are movable in the directions of the two-headed arrows.
  • the concentrator can be made tolie completely inside the winding of the heating coil and be movable only from the outside of the heating coil. It is also possible to provide a concentrator above or below or both above and below the heating coil.
  • the device of my invention it is advisable to have all parts of the device of my invention enclosed by a relatively large vessel, which serves for maintaining the necessary vacuum, or the protective gas atmosphere, respectively as shown with related equipment, for example, in my Patent No. 2,972,525.
  • the concentrator may also be placed in a relatively narrow vessel, for example a quartz tube, while the heating coil in located outside of the vessel, for example surrounding the quartz tube.
  • Relative motion between the heating coil and the treated rod may be effected by movement of the heating coil while the rod is tightly gripped inside the vessel, or by moving the rod while the heating coil is held fixed.
  • Movement of the parts 5a-5c can be effected by suitably manipulating the holder rods 7 secured thereto.
  • Movement of the strips 11, 12 can be effected by suitably manipulating the distant ends thereof.
  • an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator device having an opening through which the rod extends, said concentrator device being located in the field between the heating coil and the melting zone and comprising a plurality of parts movable relative to each other within said field for varying the size of said opening so as to accommodate rods of respectively varying cross section therein.
  • an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator device having an opening through which the rod extends, said concentrator device being locate-d below the heating coil in the field between the heating coil and the melting Zone and comprising a plurality of parts movable relative to each other within said field for varying the size of said opening so as to accommodate rods of respectively varying cross section therein.
  • an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator having an opening through which the rod extends, said concentrator being located in the field between the heating coil and the melting zone and comprising a subdivided ring having a silver surface, the subdivisions of said ring being radially movable for varying the inner diameter of said ring whereby rods of varying cross-sectional area or shape can be accommodated by said concentrator.
  • an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator comprising a pair of metal strips aligned end to end each formed with a V-shaped notch at mutually adjacent ends thereof defining an aperture through which the rod extends, said concentrator being located in the field between the heating coil and the melting zone, and the metal strips of said concentrator having a silver surface and being movable toward and away from each other for varying the size of said aperture whereby rods of varying cross-sectional area or shape can be accommodated by said concentrator.

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US430361A 1964-02-08 1965-02-04 Apparatus for crucible-free zone melting Expired - Lifetime US3342970A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES89439A DE1260439B (de) 1964-02-08 1964-02-08 Vorrichtung zum tiegelfreien Zonenschmelzen

Publications (1)

Publication Number Publication Date
US3342970A true US3342970A (en) 1967-09-19

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Family Applications (1)

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US430361A Expired - Lifetime US3342970A (en) 1964-02-08 1965-02-04 Apparatus for crucible-free zone melting

Country Status (7)

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US (1) US3342970A (xx)
BE (1) BE659252A (xx)
CH (1) CH414553A (xx)
DE (1) DE1260439B (xx)
FR (1) FR1445481A (xx)
GB (1) GB1022427A (xx)
SE (1) SE302116B (xx)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660062A (en) * 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
US4109128A (en) * 1975-09-01 1978-08-22 Wacker-Chemitronik Gesellschaft Fur Elektronik-Grundstoffe Mbh Method for the production of semiconductor rods of large diameter and device for making the same
US4184135A (en) * 1978-04-10 1980-01-15 Monsanto Company Breakapart single turn RF induction apparatus
DE3143146A1 (de) * 1981-10-30 1983-05-11 Siemens AG, 1000 Berlin und 8000 München Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen
DE3226713A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen
DE3229461A1 (de) * 1982-08-06 1984-02-09 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum tiegelfreien zonenschmelzen eines, insbesondere aus silicium bestehenden halbleiterstabes
US4458127A (en) * 1981-05-26 1984-07-03 Park-Ohio Industries, Inc. Inductor for annealing work hardened portions of structural beams
US4549051A (en) * 1984-02-15 1985-10-22 Ness Richard A Induction heating device for nozzles of containers
US5009860A (en) * 1987-05-25 1991-04-23 Shin-Etsu Handotai Co., Ltd. Semiconductor rod zone melting apparatus
US5089082A (en) * 1989-11-24 1992-02-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process and apparatus for producing silicon ingots having high oxygen content by crucible-free zone pulling, silicon ingots obtainable thereby and silicon wafers produced therefrom
US20110073591A1 (en) * 2008-07-17 2011-03-31 Seiichi Sawatsubashi Guide Chip Structure for High-Frequency Induction Heating Coil

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2537289A (en) * 1944-04-26 1951-01-09 Hartford Nat Bank & Trust Co Device for heating pieces of work by means of high-frequency alternating currents
US3100250A (en) * 1961-04-07 1963-08-06 Herczog Andrew Zone melting apparatus
FR1358425A (fr) * 1963-01-22 1964-04-17 Traitements Electrolytiques & Perfectionnement au chalumeau à plasma haute fréquence
US3232716A (en) * 1959-12-23 1966-02-01 Siemens Halske Ag Device for pulling monocrystalline semiconductor rods

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL225733A (xx) * 1953-09-25 1900-01-01

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2537289A (en) * 1944-04-26 1951-01-09 Hartford Nat Bank & Trust Co Device for heating pieces of work by means of high-frequency alternating currents
US3232716A (en) * 1959-12-23 1966-02-01 Siemens Halske Ag Device for pulling monocrystalline semiconductor rods
US3100250A (en) * 1961-04-07 1963-08-06 Herczog Andrew Zone melting apparatus
FR1358425A (fr) * 1963-01-22 1964-04-17 Traitements Electrolytiques & Perfectionnement au chalumeau à plasma haute fréquence

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660062A (en) * 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
US4109128A (en) * 1975-09-01 1978-08-22 Wacker-Chemitronik Gesellschaft Fur Elektronik-Grundstoffe Mbh Method for the production of semiconductor rods of large diameter and device for making the same
US4184135A (en) * 1978-04-10 1980-01-15 Monsanto Company Breakapart single turn RF induction apparatus
US4458127A (en) * 1981-05-26 1984-07-03 Park-Ohio Industries, Inc. Inductor for annealing work hardened portions of structural beams
DE3143146A1 (de) * 1981-10-30 1983-05-11 Siemens AG, 1000 Berlin und 8000 München Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen
DE3226713A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen
DE3229461A1 (de) * 1982-08-06 1984-02-09 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum tiegelfreien zonenschmelzen eines, insbesondere aus silicium bestehenden halbleiterstabes
US4549051A (en) * 1984-02-15 1985-10-22 Ness Richard A Induction heating device for nozzles of containers
US5009860A (en) * 1987-05-25 1991-04-23 Shin-Etsu Handotai Co., Ltd. Semiconductor rod zone melting apparatus
US5089082A (en) * 1989-11-24 1992-02-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process and apparatus for producing silicon ingots having high oxygen content by crucible-free zone pulling, silicon ingots obtainable thereby and silicon wafers produced therefrom
US20110073591A1 (en) * 2008-07-17 2011-03-31 Seiichi Sawatsubashi Guide Chip Structure for High-Frequency Induction Heating Coil

Also Published As

Publication number Publication date
DE1260439B (de) 1968-02-08
BE659252A (xx) 1965-08-04
SE302116B (xx) 1968-07-08
CH414553A (de) 1966-06-15
GB1022427A (en) 1966-03-16
FR1445481A (fr) 1966-07-15

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